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Microelectronics Reliability, Volume 61

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Volume 61, June 2016

Editorial

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Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou:
Editorial. 1-2

Reliability and Variability of Integrated Circuits and Systems

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Lado Filipovic, Siegfried Selberherr:
Stress in three-dimensionally integrated sensor systems. 3-10
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Stefan Rosch, Holm Rauchfuss, Stefan Wallentowitz, Thomas Wild, Andreas Herkersdorf:
MPSoC application resilience by hardware-assisted communication virtualization. 11-16
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Husni M. Habal, Helmut Graeb:
A step-accurate model for the trapping and release of charge carriers suitable for the transient simulation of analog circuits. 17-23
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Sanjit Kumar Swain, Arka Dutta, Sarosij Adak, Sudhansu Kumar Pati, Chandan Kumar Sarkar:
Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs. 24-29
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Shushanik Karapetyan, Veit Kleeberger, Ulf Schlichtmann:
FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies. 30-34

Reliability of Interconnects and Packaging

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Anshul A. Vyas, Changjian Zhou, Patrick Wilhite, Phillip Wang, Cary Y. Yang:
Electrical properties of carbon nanotube via interconnects for 30 nm linewidth and beyond. 35-42
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Matthias Jung, Christian Weis, Norbert Wehn:
A cross layer approach for efficient thermal management in 3D stacked SoCs. 43-47
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Yu-Lin Shen, Geno C. Flores, J. Guthrie:
Numerical study of microbump failure in 3D microelectronic structures. 48-55
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Marvin Chan, Cher Ming Tan, Kheng Chooi Lee, Chuan Seng Tan:
Non-destructive degradation study of copper wire bond for its temperature cycling reliability evaluation. 56-63
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Fa Xing Che, Xiaowu Zhang, Jong-Kai Lin:
Reliability study of 3D IC packaging based on through-silicon interposer (TSI) and silicon-less interconnection technology (SLIT) using finite element analysis. 64-70

Device Reliability

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Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey:
Compliance current dominates evolution of NiSi₂ defect size in Ni/dielectric/Si RRAM devices. 71-77
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Xuan Feng, Shurong Dong, Hei Wong, Danqun Yu, Kin Leong Pey, Kalya Shubhakar, W. S. Lau:
Effects of thermal annealing on the charge localization characteristics of HfO₂/Au/HfO₂ stack. 78-81
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Jian Ren, Dawei Yan, Yang Zhai, Wenjie Mou, Xiaofeng Gu:
Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes. 82-86
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Udit Narula, Cher Ming Tan, Chao-Sung Lai:
Copper induced synthesis of graphene using amorphous carbon. 87-90
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Hao Jin, Xiao Xu, Yebo Tao, Bin Feng, Demiao Wang:
Reliability enhancement of zinc oxide varistors using sputtered silver electrodes. 91-94
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Danqun Yu, W. S. Lau, Hei Wong, Xuan Feng, Shurong Dong, Kin Leong Pey:
The variation of the leakage current characteristics of W/Ta₂O₅/W MIM capacitors with the thickness of the bottom W electrode. 95-98
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Arka Dutta, Kalyan Koley, Samar K. Saha, Chandan Kumar Sarkar:
Impact of temperature on linearity and harmonic distortion characteristics of underlapped FinFET. 99-105

Electrostatic Discharge and High-Voltage Devices

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Weihuai Wang, Hao Jin, Wei Guo, Shurong Dong, Wei Liang, Juin J. Liou, Yan Han:
Very small snapback silicon-controlled rectifier for electrostatic discharge protection in 28 nm processing. 106-110
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Zhihui Yu, Hao Jin, Shurong Dong, Hei Wong, Jie Zeng, Weihuai Wang:
Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices. 111-114
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Hailian Liang, Huafeng Cao, Xiaofeng Gu, Zixiang Guo:
Design and optimization of LDMOS-SCR devices with improved ESD protection performance. 115-119
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Hailian Liang, Xiuwen Bi, Xiaofeng Gu, Huafeng Cao, Yun Zhang:
Investigation on LDMOS-SCR with high holding current for high voltage ESD protection. 120-124
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Shuai Zhang, Hsiao-Chin Tuan, Xiaojing Wu, Lei Shi, Jian Wu:
300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology. 125-128

Reliability of LED Lighting Technology

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Preetpal Singh, Cher Ming Tan:
A review on the humidity reliability of high power white light LEDs. 129-139
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Lixia Sun, Jianxin Zhu, Hei Wong:
Simulation and evaluation of the peak temperature in LED light bulb heatsink. 140-144
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Preetpal Singh, Cher Ming Tan, Liann-Be Chang:
Early degradation of high power packaged LEDs under humid conditions and its recovery - Myth of reliability rejuvenation. 145-153

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