• case-insensitive prefix search: default
  e.g., sig matches "SIGIR" as well as "signal"
• exact word search: append dollar sign ($) to word
  e.g., graph$ matches "graph", but not "graphics"
• boolean and: separate words by space
  e.g., codd model
• boolean or: connect words by pipe symbol (|)
  e.g., graph|network

Update May 7, 2017: Please note that we had to disable the phrase search operator (.) and the boolean not operator (-) due to technical problems. For the time being, phrase search queries will yield regular prefix search result, and search terms preceded by a minus will be interpreted as regular (positive) search terms.

found 322 matches

• 2013
• 
  Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi:
  Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. Microelectron. Reliab. 53(9-11): 1707-1712 (2013)
• 
  Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto:
  Thermal instability during short circuit of normally-off AlGaN/GaN HFETs. Microelectron. Reliab. 53(9-11): 1481-1485 (2013)
• 
  Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi:
  An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities. Microelectron. Reliab. 53(5): 670-675 (2013)
• 
  Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
  Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. Microelectron. Reliab. 53(7): 937-946 (2013)
• 
  Orazio Aiello, Franco Fiori:
  A new MagFET-based integrated current sensor highly immune to EMI. Microelectron. Reliab. 53(4): 573-581 (2013)
• 
  Naushad Alam, Bulusu Anand, Sudeb Dasgupta:
  The impact of process-induced mechanical stress on CMOS buffer design using multi-fingered devices. Microelectron. Reliab. 53(3): 379-385 (2013)
• 
  Naushad Alam, Bulusu Anand, Sudeb Dasgupta:
  The impact of process-induced mechanical stress in narrow width devices and variable-taper CMOS buffer design. Microelectron. Reliab. 53(5): 718-724 (2013)
• 
  S. Amara-Dababi, Ricardo C. Sousa, H. Béa, Claire Baraduc, Ken Mackay, Bernard Dieny:
  Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise. Microelectron. Reliab. 53(9-11): 1239-1242 (2013)
• 
  Jong-Ning Aoh, Cheng-Li Chuang, Min-Yi Kang:
  Reliability of TCT and HH/HT test performed in chips and flex substrates assembled by thermosonic flip-chip bonding process. Microelectron. Reliab. 53(3): 463-472 (2013)
• 
  Syed Askari, Mehrdad Nourani:
  An on-chip sensor to measure and compensate static NBTI-induced degradation in analog circuits. Microelectron. Reliab. 53(2): 245-253 (2013)
• 
  J. Assaf:
  Extraction of noise spectral densities(intrinsic and irradiation contributions) of a charge preamplifier based on JFET. Microelectron. Reliab. 53(5): 712-717 (2013)
• 
  Mohamed Ayadi, Olivier Briat, Akram Eddahech, Ronan German, Gerard Coquery, Jean-Michel Vinassa:
  Thermal cycling impacts on supercapacitor performances during calendar ageing. Microelectron. Reliab. 53(9-11): 1628-1631 (2013)
• 
  Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Mathieu Moreau, Christophe Muller:
  A novel test structure for OxRRAM process variability evaluation. Microelectron. Reliab. 53(9-11): 1208-1212 (2013)
• 
  Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel, Jean-Michel Reynes, Jean-Luc Massol, E. Pomes:
  Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling. Microelectron. Reliab. 53(9-11): 1750-1754 (2013)
• 
  F. Baccar, Stephane Azzopardi, L. Théolier, K. El Boubkari, Jean-Yves Delétage, Eric Woirgard:
  Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach. Microelectron. Reliab. 53(9-11): 1719-1724 (2013)
• 
  V. S. Balderrama, Magali Estrada, Aurelien Viterisi, Pilar Formentin, Josep Pallarès, Josep Ferré-Borrull, Emilio Palomares, Lluís F. Marsal:
  Correlation between P3HT inter-chain structure and J_sc of P3HT: PC_[70]BM blends for solar cells. Microelectron. Reliab. 53(4): 560-564 (2013)
• 
  Eduardas Bareisa, Vacius Jusas, Kestutis Motiejunas, Rimantas Seinauskas:
  Delay fault testing using partial multiple scan chains. Microelectron. Reliab. 53(12): 2070-2077 (2013)
• 
  Daniele Bari, Nicola Wrachien, R. Tagliaferro, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, Andrea Cester:
  Comparison between positive and negative constant current stress on dye-sensitized solar cells. Microelectron. Reliab. 53(9-11): 1804-1808 (2013)
• 
  Charles E. Bauer, Herbert J. Neuhaus:
  Embedded packaging and assembly; Reliability and supply chain implications. Microelectron. Reliab. 53(9-11): 1179-1182 (2013)
• 
  Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt:
  Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectron. Reliab. 53(6): 867-871 (2013)
• 
  Alain Bensoussan, Ronan Marec, Jean Luc Muraro, L. Portal, Philippe Calvel, Catherine Barillot, Marie Genevieve Perichaud, Laurent Marchand, Gael Vignon:
  GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing. Microelectron. Reliab. 53(9-11): 1466-1470 (2013)
• 
  Toufik Bentrcia, Fayçal Djeffal, M. Chahdi:
  An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects. Microelectron. Reliab. 53(4): 520-527 (2013)
• 
  Corinne Bergès, Julien Goxe:
  Benefits of field failure distribution modeling to the failure analysis. Microelectron. Reliab. 53(9-11): 1194-1198 (2013)
• 
  Mauro A. Bettiati:
  High optical strength GaAs-based laser structures. Microelectron. Reliab. 53(9-11): 1496-1500 (2013)
• 
  Abhijit Biswas, Swagata Bhattacherjee:
  Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs. Microelectron. Reliab. 53(3): 363-370 (2013)
• 
  Peter Borgesen, S. Hamasha, Mazin Obaidat, V. Raghavan, X. Dai, Michael Meilunas, M. Anselm:
  Solder joint reliability under realistic service conditions. Microelectron. Reliab. 53(9-11): 1587-1591 (2013)
• 
  Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat:
  Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53(9-11): 1450-1455 (2013)
• 
  Paulo F. Butzen, Vinícius Dal Bem, André Inácio Reis, Renato P. Ribas:
  BTI and HCI first-order aging estimation for early use in standard cell technology mapping. Microelectron. Reliab. 53(9-11): 1360-1364 (2013)
• 
  Xiaowu Cai, Junxiu Wei, Chao Liang, Zhe Gao, Chuan Lv:
  Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process. Microelectron. Reliab. 53(6): 861-866 (2013)
• 
  Miao Cai, D. J. Xie, W. B. Chen, B. Y. Wu, Dao-Guo Yang, G. Q. Zhang:
  A novel soldering method to evaluate PCB pad cratering for pin-pull testing. Microelectron. Reliab. 53(9-11): 1568-1574 (2013)

skipping 292 more matches