Microelectronics Reliability, Volume 53

Volume 53, Number 1, January 2013

Special Section: Reliability of micro-interconnects in 3D IC packages

• 
  C. Robert Kao, Albert T. Wu, King-Ning Tu, Yi-Shao Lai:
  Reliability of micro-interconnects in 3D IC packages. 1
• 
  King-Ning Tu, Hsiang-Yao Hsiao, Chih Chen:
  Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy. 2-6
• 
  Cheng-Ta Ko, Kuan-Neng Chen:
  Reliability of key technologies in 3D integration. 7-16
• 
  Thomas Frank, Stéphane Moreau, Cédrick Chappaz, Patrick Leduc, Lucile Arnaud, Aurélie Thuaire, Emmanuel Chery, F. Lorut, Lorena Anghel, Gilles Poupon:
  Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric. 17-29
• 
  Wen-Hwa Chen, Ching-Feng Yu, Hsien-Chie Cheng, Yu-min Tsai, Su-Tsai Lu:
  IMC growth reaction and its effects on solder joint thermal cycling reliability of 3D chip stacking packaging. 30-40
• 
  Y. W. Chang, H. Y. Peng, R. W. Yang, Chih Chen, T. C. Chang, Chau-Jie Zhan, Jin-Ye Juang, Annie T. Huang:
  Analysis of bump resistance and current distribution of ultra-fine-pitch microbumps. 41-46
• 
  Y. J. Chen, C. K. Chung, C. R. Yang, C. Robert Kao:
  Single-joint shear strength of micro Cu pillar solder bumps with different amounts of intermetallics. 47-52
• 
  Tengfei Jiang, Suk-Kyu Ryu, Qiu Zhao, Jay Im, Rui Huang, Paul S. Ho:
  Measurement and analysis of thermal stresses in 3D integrated structures containing through-silicon-vias. 53-62
• 
  Anirudh Udupa, Ganesh Subbarayan, Cheng-Kok Koh:
  Analytical estimates of stress around a doubly periodic arrangement of through-silicon vias. 63-69
• 
  Xi Liu, Qiao Chen, Venkatesh Sundaram, Rao R. Tummala, Suresh K. Sitaraman:
  Failure analysis of through-silicon vias in free-standing wafer under thermal-shock test. 70-78
• 
  Yu-Lin Shen, R. W. Johnson:
  Misalignment induced shear deformation in 3D chip stacking: A parametric numerical assessment. 79-89

Regular Paper

• 
  Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Alberto Terán Barrios, Juin J. Liou, Ching-Sung Ho:
  Revisiting MOSFET threshold voltage extraction methods. 90-104

Research Papers

• 
  Saurabh Kothawade, Koushik Chakraborty:
  Analysis and mitigation of BTI aging in register file: An application driven approach. 105-113
• 
  Nihaar N. Mahatme, Indranil Chatterjee, Akash Patki, Daniel B. Limbrick, Bharat L. Bhuva, Ronald D. Schrimpf, William H. Robinson:
  An efficient technique to select logic nodes for single event transient pulse-width reduction. 114-117
• 
  Yue Xu, Chun-bo Wu, Xiaoli Ji, Feng Yan, Yi Shi:
  An improved multilevel cell programming technique for 4-bits/cell localized trapping SONOS memory devices. 118-122
• 
  Zhouying Zhao, Lynn Rice, Harry Efstathiadis, Pradeep Haldar:
  Annealing and thickness related performance and degradation of polymer solar cells. 123-128
• 
  Jianguang Chen, Liang Feng, Yuhua Cheng:
  Research and design of a power management chip for wireless powering capsule endoscopy. 129-135
• 
  Chien-Yi Huang:
  Reliability assessment of RFID reader through prognostics and health management. 136-144
• 
  Toru Ikeda, Toshifumi Kanno, Nobuyuki Shishido, Noriyuki Miyazaki, Hiroyuki Tanaka, Takuya Hatao:
  Non-linear analyses of strain in flip chip packages improved by the measurement using the digital image correlation method. 145-153
• 
  B. Li, X. P. Zhang, Y. Yang, L. M. Yin, Michael G. Pecht:
  Size and constraint effects on interfacial fracture behavior of microscale solder interconnects. 154-163
• 
  Yap Boon Kar, Tan Cai Hui, Ramasamy Agileswari, Calvin Lo:
  Comparison study on reliability performance for polymer core solder balls under multiple reflow and HTS stress tests. 164-173
• 
  Xin Li, Gang Chen, Xu Chen, Guo-Quan Lu, Lei Wang, Yun-Hui Mei:
  High temperature ratcheting behavior of nano-silver paste sintered lap shear joint under cyclic shear force. 174-181

Volume 53, Number 2, February 2013

Special Section: Advances in ESD protection for ICs

• 
  Vesselin K. Vassilev:
  Advances in ESD protection for ICs. 183
• 
  Timothy J. Maloney:
  HBM tester waveforms, equivalent circuits, and socket capacitance. 184-189
• 
  Theo Smedes, M. Polewski, A. van IJzerloo, Jean Luc Lefebvre, M. Dekker:
  Pitfalls for CDM calibration procedures. 190-195
• 
  Yuanzhong Paul Zhou, David Ellis, Jean-Jacques Hajjar, Andrew Olney, Juin J. Liou:
  vfTLP-V_TH: A new method for quantifying the effectiveness of ESD protection for the CDM classification test. 196-204
• 
  Kil-Ho Kim, Yong-Jin Seo:
  Electrostatic discharge (ESD) protection of N-type silicon controlled rectifier with P-type MOSFET pass structure for high voltage operating I/O application. 205-207
• 
  Chih-Ting Yeh, Ming-Dou Ker:
  PMOS-based power-rail ESD clamp circuit with adjustable holding voltage controlled by ESD detection circuit. 208-214
• 
  Mototsugu Okushima, Junji Tsuruta:
  Secondary ESD clamp circuit for CDM protection of over 6 Gbit/s SerDes application in 40 nm CMOS. 215-220
• 
  Nicolas Monnereau, Fabrice Caignet, David Trémouilles, Nicolas Nolhier, Marise Bafleur:
  Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation. 221-228

Regular Research Papers

• 
  Vincent Fiori, Sébastien Gallois-Garreignot, Hervé Jaouen, Clément Tavernier:
  Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond. 229-235
• 
  Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta:
  Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter. 236-244
• 
  Syed Askari, Mehrdad Nourani:
  An on-chip sensor to measure and compensate static NBTI-induced degradation in analog circuits. 245-253
• 
  S. L. Jang, Jiann-Shiun Yuan, S. D. Yen, E. Kritchanchai, G. W. Huang:
  Experimental evaluation of hot electron reliability on differential Clapp-VCO. 254-258
• 
  Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou:
  Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. 259-264
• 
  Wen-Kuan Yeh, Po-Ying Chen, Kwang-Jow Gan, Jer-Chyi Wang, Chao-Sung Lai:
  The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET. 265-269
• 
  Durga Misra, Jyothi Kasinath, Arun N. Chandorkar:
  Voltage and current stress induced variations in TiN/HfSi_xO_y/TiN MIM capacitors. 270-273
• 
  Jacques Tardy, Mohsen Erouel:
  Stability of pentacene transistors under concomitant influence of water vapor and bias stress. 274-278
• 
  Laura Ciammaruchi, Stefano Penna, Andrea Reale, Thomas M. Brown, Aldo Di Carlo:
  Acceleration factor for ageing measurement of dye solar cells. 279-281
• 
  Luowei Zhou, Shengqi Zhou, Mingwei Xu:
  Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off. 282-287
• 
  Huang-Kuang Kung, Hung-Shyong Chen, Ming-Cheng Lu:
  The wire sag problem in wire bonding technology for semiconductor packaging. 288-296
• 
  Tong Hong Wang, Ching-I Tsai, Chang-Chi Lee, Yi-Shao Lai:
  Study of factors affecting warpage of HFCBGA subjected to reflow soldering-liked profile. 297-302
• 
  Venkatesh Arasanipalai Raghavan, Brian Roggeman, Michael Meilunas, Peter Borgesen:
  Effects of 'Latent Damage' on pad cratering: Reduction in life and a potential change in failure mode. 303-313
• 
  Hironori Tohmyoh, Shoho Ishikawa, Satoshi Watanabe, Motohisa Kuroha, Yoshikatsu Nakano:
  Estimation and visualization of the fatigue life of Pb-free SAC solder bump joints under thermal cycling. 314-320
• 
  Qinghua Zhao, Anmin Hu, Ming Li, Jiangyan Sun:
  Effect of electroplating layer structure on shear property and microstructure of multilayer electroplated Sn-3.5Ag solder bumps. 321-326
• 
  Yang Yang, Yongzhi Li, Hao Lu, Chun Yu, Junmei Chen:
  Interdiffusion at the interface between Sn-based solders and Cu substrate. 327-333
• 
  C. Y. Khor, Mohd Zulkifly Abdullah:
  Analysis of fluid/structure interaction: Influence of silicon chip thickness in moulded packaging. 334-347

Volume 53, Number 3, March 2013

Research Papers

• 
  Ganesh C. Patil, Shafi Qureshi:
  Engineering buried oxide in dopant-segregated Schottky barrier SOI MOSFET for nanoscale CMOS circuits. 349-355
• 
  Vladimír Kosel, Stefano de Filippis, Liu Chen, Stefan Decker, Andrea Irace:
  FEM simulation approach to investigate electro-thermal behavior of power transistors in 3-D. 356-362
• 
  Abhijit Biswas, Swagata Bhattacherjee:
  Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs. 363-370
• 
  Jie Chen, Zhengwei Du:
  Device simulation studies on latch-up effects in CMOS inverters induced by microwave pulse. 371-378
• 
  Naushad Alam, Bulusu Anand, Sudeb Dasgupta:
  The impact of process-induced mechanical stress on CMOS buffer design using multi-fingered devices. 379-385
• 
  Sung-Jae Chang, Maryline Bawedin, Wade Xiong, Jong-Hyun Lee, Jung-Hee Lee, Sorin Cristoloveanu:
  Remote carrier trapping in FinFETs with ONO buried layer: Temperature effects. 386-393
• 
  N. Lukyanchikova, N. Garbar, Valeriya Kudina, A. Smolanka, Eddy Simoen, Cor Claeys:
  Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry. 394-399
• 
  Liqiang Han, Suying Yao, Jiangtao Xu, Chao Xu:
  Characteristics of random telegraph signal noise in time delay integration CMOS image sensor. 400-404
• 
  Hsien-Chin Chiu, Chao-Wei Lin, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau:
  Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate. 405-408
• 
  Guoxuan Qin, Guogong Wang, Ningyue Jiang, Jianguo Ma, Zhenqiang Ma:
  On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions. 409-413
• 
  Zlatica Marinkovic, Nenad Ivkovic, Olivera Pronic-Rancic, Vera Markovic, Alina Caddemi:
  Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors. 414-419
• 
  Chao-Wei Tang, Kuan-Ming Li, Mike Yang, Hsueh-Chuan Liao, Hong-Tsu Young:
  Improving the dielectric breakdown field of silicon light-emitting-diode sub-mount by a hybrid nanosecond laser drilling strategy. 420-427
• 
  Mika Maaspuro, Aulis Tuominen:
  Thermal analysis of LED spot lighting device operating in external natural or forced heat convection. 428-434
• 
  Bong-Min Song, Bongtae Han, Joon-Hyun Lee:
  Optimum design domain of LED-based solid state lighting considering cost, energy consumption and reliability. 435-442
• 
  Artur Wymyslowski, Lukasz Dowhan:
  Application of nanoindentation technique for investigation of elasto-plastic properties of the selected thin film materials. 443-451
• 
  P. Jesudoss, Alan Mathewson, W. M. D. Wright, Frank A. Stam:
  Mechanical assessment of an anisotropic conductive adhesive joint of a direct access sensor on a flexible substrate for a swallowable capsule application. 452-462
• 
  Jong-Ning Aoh, Cheng-Li Chuang, Min-Yi Kang:
  Reliability of TCT and HH/HT test performed in chips and flex substrates assembled by thermosonic flip-chip bonding process. 463-472
• 
  Vemal Raja Manikam, Khairunisak Abdul Razak, Kuan Yew Cheong:
  Reliability of sintered Ag₈₀-Al₂₀ die attach nanopaste for high temperature applications on SiC power devices. 473-480
• 
  Anupama Tiwari, Dilip Roy:
  Estimation of reliability of mobile handsets using Cox-proportional hazard model. 481-487
• 
  Aiwu Ruan, Shi Kang, Yu Wang, Xiao Han, Zujian Zhu, Yongbo Liao, Peng Li:
  A Built-In Self-Test (BIST) system with non-intrusive TPG and ORA for FPGA test and diagnosis. 488-498

Research Notes

• 
  D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar:
  Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics. 499-504
• 
  Kong-Pang Pun, Lei Sun, Bing Li:
  Unit capacitor array based SAR ADC. 505-508
• 
  Seung Eun Lee:
  Adaptive error correction in Orthogonal Latin Square Codes for low-power, resilient on-chip interconnection network. 509-511

Volume 53, Number 4, April 2013

Research Papers

• 
  Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene:
  A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues. 513-519
• 
  Toufik Bentrcia, Fayçal Djeffal, M. Chahdi:
  An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects. 520-527
• 
  Jun-Hyuk Seo, Ji-Young Kim, Young-Bae Kim, Dong-Wook Kim, Haeri Kim, Hyun Cho, Duck-Kyun Choi:
  Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide. 528-532
• 
  Narjes Moghadam, Mohammad Kazem Moravvej-Farshi, Mohammad Reza Aziziyan:
  Design and simulation of MOSCNT with band engineered source and drain regions. 533-539
• 
  Mahdiar Hosein Ghadiry, Mahdieh Nadi Senjani, M. Bahadoran, Asrulnizam Bin Abd Manaf, H. Karimi, Hatef Sadeghi:
  An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors. 540-543
• 
  Xingming Long, Rui-Jin Liao, Jing Zhou, Zhi Zeng:
  Thermal uniformity of packaging multiple light-emitting diodes embedded in aluminum-core printed circuit boards. 544-553
• 
  Han-Kuei Fu, Chien-Ping Wang, Hsin-Chien Chiang, Tzung-Te Chen, Chiu-Ling Chen, Pei-Ting Chou:
  Evaluation of temperature distribution of LED module. 554-559
• 
  V. S. Balderrama, Magali Estrada, Aurelien Viterisi, Pilar Formentin, Josep Pallarès, Josep Ferré-Borrull, Emilio Palomares, Lluís F. Marsal:
  Correlation between P3HT inter-chain structure and J_sc of P3HT: PC_[70]BM blends for solar cells. 560-564
• 
  Jawar Singh, Narayanan Vijaykrishnan:
  A highly reliable NBTI Resilient 6T SRAM cell. 565-572
• 
  Orazio Aiello, Franco Fiori:
  A new MagFET-based integrated current sensor highly immune to EMI. 573-581
• 
  Adam Golda, Andrzej Kos:
  Optimum control of microprocessor throughput under thermal and energy saving constraints. 582-591
• 
  Anindya Jana, Nameirakpam Basanta Singh, J. K. Sing, Subir Kumar Sarkar:
  Design and simulation of hybrid CMOS-SET circuits. 592-599
• 
  Ernest E. S. Ong, Mohd Zulkifly Abdullah, W. K. Loh, C. K. Ooi, R. Chan:
  FSI implications of EMC rheological properties to 3D IC with TSV structures during plastic encapsulation process. 600-611
• 
  Masaki Omiya, Kozo Koiwa, Nobuyuki Shishido, Shoji Kamiya, Chuantong Chen, Hisashi Sato, Masahiro Nishida, Takashi Suzuki, Tomoji Nakamura, Toshiaki Suzuki, Takeshi Nokuo:
  Experimental and numerical evaluation of interfacial adhesion on Cu/SiN in LSI interconnect structures. 612-621
• 
  Xinjun Sheng, Lei Jia, Zhenhua Xiong, Zhiping Wang, Han Ding:
  ACF-COG interconnection conductivity inspection system using conductive area. 622-628
• 
  Yao Yao, Leon M. Keer:
  Cohesive fracture mechanics based numerical analysis to BGA packaging and lead free solders under drop impact. 629-637
• 
  Seong-Hun Na, Seung-Kyu Lim, Jin-Soo Kim, Hwa-Sun Park, Heung-Jae Oh, Jin-Won Choi, Su-Jeong Suh:
  Experimental study of bump void formation according to process conditions. 638-644
• 
  Gang Chen, Ze-Sheng Zhang, Yun-Hui Mei, Xin Li, Guo-Quan Lu, Xu Chen:
  Ratcheting behavior of sandwiched assembly joined by sintered nanosilver for power electronics packaging. 645-651
• 
  Qinghua Wang, Satoshi Kishimoto, Huimin Xie, Zhanwei Liu, Xinhao Lou:
  In situ high temperature creep deformation of micro-structure with metal film wire on flexible membrane using geometric phase analysis. 652-657

Volume 53, Number 5, May 2013

Research Papers

• 
  Ryuji Tomita, Hidehiko Kimura, M. Yasuda, K. Maeda, S. Ueno, T. Tomizawa, Y. Kunimune, H. Nakamura, M. Moritoki, Hiroshi Iwai:
  Formation of high resistivity phases of nickel silicide at small area. 659-664
• 
  Ryuji Tomita, Hidehiko Kimura, M. Yasuda, K. Maeda, S. Ueno, T. Tonegawa, T. Fujimoto, M. Moritoki, Hiroshi Iwai:
  Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions. 665-669
• 
  Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi:
  An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities. 670-675
• 
  A. A. Dakhel, W. E. Alnaser:
  Experimental analysis of Ga₂O₃: Ti films grown on Si and glass substrates. 676-680
• 
  Libor Pína, Jan Vobecký:
  High-power silicon P-i-N diode with cathode shorts: The impact of electron irradiation. 681-686
• 
  Lingli Jiang, Hang Fan, Ming Qiao, Bo Zhang, Zhaoji Li:
  ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications. 687-693
• 
  Yamin Zhang, Shiwei Feng, Hui Zhu, Jianwei Zhang, Bing Deng:
  Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs. 694-700
• 
  Keng Chen, Nadarajah Narendran:
  Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis. 701-705
• 
  Viviana Mulloni, Francesco Solazzi, F. Ficorella, A. Collini, Benno Margesin:
  Influence of temperature on the actuation voltage of RF-MEMS switches. 706-711
• 
  J. Assaf:
  Extraction of noise spectral densities(intrinsic and irradiation contributions) of a charge preamplifier based on JFET. 712-717
• 
  Naushad Alam, Bulusu Anand, Sudeb Dasgupta:
  The impact of process-induced mechanical stress in narrow width devices and variable-taper CMOS buffer design. 718-724
• 
  Qianwen Chen, Wuyang Yu, Cui Huang, Zhimin Tan, Zheyao Wang:
  Reliability of through-silicon-vias (TSVs) with benzocyclobutene liners. 725-732
• 
  H. X. Xie, Nikhilesh Chawla:
  Mechanical shock behavior of Sn-3.9Ag-0.7Cu and Sn-3.9Ag-0.7Cu-0.5Ce solder joints. 733-740
• 
  Shoho Ishikawa, Hironori Tohmyoh, Satoshi Watanabe, Tomonori Nishimura, Yoshikatsu Nakano:
  Extending the fatigue life of Pb-free SAC solder joints under thermal cycling. 741-747
• 
  Xiao-feng Wei, Yu-kun Zhang, Ri-chu Wang, Yan Feng:
  Microstructural evolution and shear strength of AuSn20/Ni single lap solder joints. 748-754
• 
  Balázs Illés, Barbara Horváth:
  Whiskering behaviour of immersion tin surface coating. 755-760
• 
  Didier Chicot, K. Tilkin, K. Jankowski, Artur Wymyslowski:
  Reliability analysis of solder joints due to creep and fatigue in microelectronic packaging using microindentation technique. 761-766
• 
  Chenglong Liao, Dan Guo, Shizhu Wen, Xinchun Lu, Jianbin Luo:
  Stress analysis of Cu/low-k interconnect structure during whole Cu-CMP process using finite element method. 767-773
• 
  Peter Filipp Fuchs, Gerald Pinter, Zoltan Major:
  PCB drop test lifetime assessment based on simulations and cyclic bend tests. 774-781

Volume 53, Number 6, June 2013

Special Section: Advances in Battery Reliability

• 
  Qiang Miao:
  Enabling technologies for sustainable battery: Advances in battery reliability. 783
• 
  Laurent Gagneur, Ana Lucia Driemeyer-Franco, Christophe Forgez, Guy Friedrich:
  Modeling of the diffusion phenomenon in a lithium-ion cell using frequency or time domain identification. 784-796
• 
  Weilin Luo, Chao Lyu, Lixin Wang, Liqiang Zhang:
  An approximate solution for electrolyte concentration distribution in physics-based lithium-ion cell models. 797-804
• 
  Qiang Miao, Lei Xie, Hengjuan Cui, Wei Liang, Michael G. Pecht:
  Remaining useful life prediction of lithium-ion battery with unscented particle filter technique. 805-810
• 
  Yinjiao Xing, Eden W. M. Ma, Kwok-Leung Tsui, Michael G. Pecht:
  An ensemble model for predicting the remaining useful performance of lithium-ion batteries. 811-820
• 
  Bing Long, Weiming Xian, Lin Jiang, Zhen Liu:
  An improved autoregressive model by particle swarm optimization for prognostics of lithium-ion batteries. 821-831
• 
  Datong Liu, Jingyue Pang, Jianbao Zhou, Yu Peng, Michael G. Pecht:
  Prognostics for state of health estimation of lithium-ion batteries based on combination Gaussian process functional regression. 832-839
• 
  Wei He, Nicholas Williard, Chaochao Chen, Michael G. Pecht:
  State of charge estimation for electric vehicle batteries using unscented kalman filtering. 840-847

Regular Research Papers

• 
  Michelly de Souza, Bruna Cardoso Paz, Denis Flandre, Marcelo Antonio Pavanello:
  Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs. 848-855
• 
  J. S. Yuan, E. Kritchanchai:
  Power amplifier resilient design for process, voltage, and temperature variations. 856-860
• 
  Xiaowu Cai, Junxiu Wei, Chao Liang, Zhe Gao, Chuan Lv:
  Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process. 861-866
• 
  Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt:
  Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. 867-871
• 
  Eric Heller, Sukwon Choi, Donald Dorsey, Ramakrishna Vetury, Samuel Graham:
  Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs. 872-877
• 
  J.-S. Yuan, Y. Wang, J. Steighner, H.-D. Yen, S.-L. Jang, G.-W. Huang, W.-K. Yeh:
  Reliability analysis of pHEMT power amplifier with an on-chip linearizer. 878-884
• 
  Romain Cauchois, Man Su Yin, Aline Gouantes, Xavier Boddaert:
  RFID tags for cryogenic applications: Experimental and numerical analysis of thermo-mechanical behaviour. 885-891
• 
  Sri Chaitra Chavali, Yuvraj Singh, Ganesh Subbarayan, Anurag Bansal, Mudasir Ahmad:
  Effect of pad surface finish and reflow cooling rate on the microstructure and the mechanical behavior of SnAgCu solder alloys. 892-898
• 
  P. J. Shang, L. Zhang, Zhi-Quan Liu, J. Tan, J. K. Shang:
  Ex situ observations of fast intermetallic growth on the surface of interfacial region between eutectic SnBi solder and Cu substrate during solid-state aging process. 899-905
• 
  Wei-Chih Chiu, Bing-Yue Tsui:
  Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process. 906-911
• 
  Ramin Rajaei, Mahmoud Tabandeh, Mahdi Fazeli:
  Low cost soft error hardened latch designs for nano-scale CMOS technology in presence of process variation. 912-924

Volume 53, Number 7, July 2013

Research Papers

• 
  Ephraim Suhir:
  Could electronics reliability be predicted, quantified and assured? 925-936
• 
  Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
  Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. 937-946
• 
  K. S. Kim, H. J. Kim, P. H. Choi, H. S. Park, I. H. Joo, J. E. Song, D. H. Song, Byoung Deog Choi:
  Hot hole-induced device degradation by drain junction reverse current. 947-951
• 
  Qiang Cui, Shuyun Zhang, Juin J. Liou:
  Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology. 952-955
• 
  Michal Jablonski, Frederick Bossuyt, Jan Vanfleteren, Thomas Vervust, H. de Vries:
  Reliability of a stretchable interconnect utilizing terminated, in-plane meandered copper conductor. 956-963
• 
  Wei Chen, Raphael Okereke, Suresh K. Sitaraman:
  Compliance analysis of multi-path fan-shaped interconnects. 964-974
• 
  Fan Yang, Shaker A. Meguid:
  Efficient multi-level modeling technique for determining effective board drop reliability of PCB assembly. 975-984
• 
  Yingzhi Zeng, Kewu Bai, Hongmei Jin:
  Thermodynamic study on the corrosion mechanism of copper wire bonding. 985-1001
• 
  Alireza Rezvani, Aashish Shah, M. Mayer, Norman Y. Zhou, J. T. Moon:
  Role of impact ultrasound on bond strength and Al pad splash in Cu wire bonding. 1002-1008
• 
  Barbara Horváth:
  Influence of copper diffusion on the shape of whiskers grown on bright tin layers. 1009-1020
• 
  Huai-Hui Ren, Xi-Shu Wang, Su Jia:
  Fracture analysis on die attach adhesives for stacked packages based on in-situ testing and cohesive zone model. 1021-1028
• 
  Yin Lee Goh, Agileswari K. Ramasamy, Farrukh Hafiz Nagi, Aidil Azwin Zainul Abidin:
  DSP based fuzzy and conventional overcurrent relay controller comparisons. 1029-1035
• 
  Sandra M. Djosic, Milun Jevtic:
  Dynamic voltage and frequency scaling algorithm for fault-tolerant real-time systems. 1036-1042

Volume 53, Number 8, August 2013

Special Section: Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2012 International Conference)

• 
  Artur Wymyslowski:
  Guest Editorial: 2012 EuroSimE International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems. 1043-1044
• 
  Federica Confalonieri, Giuseppe Cocchetti, Aldo Ghisi, Alberto Corigliano:
  A domain decomposition method for the simulation of fracture in polysilicon MEMS. 1045-1054
• 
  Stoyan Stoyanov, Chris Bailey, M. O. Alam, Chunyan Yin, Chris Best, Peter Tollafield, Rob Crawford, Mike Parker, Jim Scott:
  Modelling methodology for thermal analysis of hot solder dip process. 1055-1067
• 
  M. H. M. Kouters, G. H. M. Gubbels, O. Dos Santos Ferreira:
  Characterization of intermetallic compounds in Cu-Al ball bonds: Mechanical properties, interface delamination and thermal conductivity. 1068-1075
• 
  Jiri Jakovenko, J. Formánek, X. Perpiñà, Xavier Jordà, Miquel Vellvehí, Robert J. Werkhoven, Miroslav Husák, J. M. G. Kunen, P. Bancken, P. J. Bolt, A. Gasse:
  Design methodologies for reliability of SSL LED boards. 1076-1083
• 
  B. Pardo, A. Gasse, A. Fargeix, Jiri Jakovenko, Robert J. Werkhoven, Xavier Perpiñà, Xavier Jordà, Miquel Vellvehí, T. Van Weelden, P. Bancken:
  Thermal resistance investigations on new leadframe-based LED packages and boards. 1084-1094
• 
  Frank Kraemer, Steffen Wiese, Erik Peter, Jonas Seib:
  Mechanical problems of novel back contact solar modules. 1095-1100
• 
  Nancy Iwamoto:
  Molecularly derived mesoscale modeling of an epoxy/Cu interface: Interface roughness. 1101-1110
• 
  O. Hölck, Jörg Bauer, Tanja Braun, Hans Walter, Olaf Wittler, Bernhard Wunderle, Klaus-Dieter Lang:
  Transport of moisture at epoxy-SiO₂ interfaces investigated by molecular modeling. 1111-1116

Regular Research Papers

• 
  Prasanna Tamilselvan, Pingfeng Wang, Michael G. Pecht:
  A multi-attribute classification fusion system for insulated gate bipolar transistor diagnostics. 1117-1129
• 
  Hsien-Chin Chiu, Hsiang-Chun Wang, Chao-Wei Lin, Yi-Cheng Luo, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang:
  Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design. 1130-1136
• 
  ShiQing Gao, YouHe Zhou:
  Self-alignment of micro-parts using capillary interaction: Unified modeling and misalignment analysis. 1137-1148
• 
  Hualiang Huang, Zhiquan Pan, Yubing Qiu, Xingpeng Guo:
  Electrochemical corrosion behaviour of copper under periodic wet-dry cycle condition. 1149-1158
• 
  Hao-Wen Hsueh, Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen:
  Effect of the direct current on microstructure, tensile property and bonding strength of pure silver wires. 1159-1163

Research Note

• 
  Jianxin Zhu, Zhaochen Zhu:
  High-precision Berenger modes of dual-layer micro-waveguides terminated with a perfectly matched layer for on-chip optical interconnections. 1164-1167

Volume 53, Numbers 9-11, September - November 2013

• 
  Nathalie Labat, François Marc:
  Editorial. 1169-1170

Tutorial

• 
  Christopher L. Henderson:
  Failure analysis techniques for a 3D world. 1171-1178
• 
  Charles E. Bauer, Herbert J. Neuhaus:
  Embedded packaging and assembly; Reliability and supply chain implications. 1179-1182

Topic A: Quality and Reliability Techniques for Devices and Systems

• 
  Chang-Chih Chen, Fahad Ahmed, Linda Milor:
  Impact of NBTI/PBTIon SRAMs within microprocessor systems: Modeling, simulation, and analysis. 1183-1188
• 
  Arwa Ben Dhia, Samuel N. Pagliarini, Lirida Alves de Barros Naviner, Habib Mehrez, Philippe Matherat:
  A defect-tolerant area-efficient multiplexer for basic blocks in SRAM-based FPGAs. 1189-1193
• 
  Corinne Bergès, Julien Goxe:
  Benefits of field failure distribution modeling to the failure analysis. 1194-1198
• 
  P. Steinhorst, Tilo Poller, Josef Lutz:
  Approach of a physically based lifetime model for solder layers in power modules. 1199-1202
• 
  Paolo Lorenzi, Rosario Rao, T. Prifti, Fernanda Irrera:
  Impact of the forming conditions and electrode metals on read disturb in HfO₂-based RRAM. 1203-1207
• 
  Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Mathieu Moreau, Christophe Muller:
  A novel test structure for OxRRAM process variability evaluation. 1208-1212
• 
  Nicoleta Cucu Laurenciu, Sorin Dan Cotofana:
  A nonlinear degradation path dependent end-of-life estimation framework from noisy observations. 1213-1217
• 
  Pierre Canet, Jérémy Postel-Pellerin, Jean-Luc Ogier:
  Access resistor modelling for EEPROM's retention test vehicle. 1218-1223
• 
  Wang Kang, Weisheng Zhao, Zhaohao Wang, Yue Zhang, Jacques-Olivier Klein, Youguang Zhang, Claude Chappert, Dafine Ravelosona:
  A low-cost built-in error correction circuit design for STT-MRAM reliability improvement. 1224-1229
• 
  Samuel N. Pagliarini, Arwa Ben Dhia, Lirida Alves de Barros Naviner, Jean-François Naviner:
  SNaP: A novel hybrid method for circuit reliability assessment under multiple faults. 1230-1234
• 
  S. I. Chan, J. H. Kang, Joong Soon Jang:
  Reliability improvement of automotive electronics based on environmental stress screen methodology. 1235-1238

Topic B: Characterisation and Modelling of Failure Mechanism in Si technologies & Nanoelectronics

• 
  S. Amara-Dababi, Ricardo C. Sousa, H. Béa, Claire Baraduc, Ken Mackay, Bernard Dieny:
  Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise. 1239-1242
• 
  V. Velayudhan, Francisco Gámiz, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
  Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. 1243-1246
• 
  Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
  Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications. 1247-1251
• 
  Keith A. Jenkins, Pong-Fei Lu:
  On-chip circuit to monitor long-term NBTI and PBTI degradation. 1252-1256
• 
  X. Saura, D. Moix, Jordi Suñé, Paul K. Hurley, Enrique Miranda:
  Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. 1257-1260
• 
  M. K. Lim, Vassilios A. Chouliaras, Chee Lip Gan, Vincent M. Dwyer:
  Bidirectional electromigration failure. 1261-1265
• 
  Sonia Ben Dhia, Alexandre Boyer:
  Long-term Electro-Magnetic Robustness of Integrated Circuits: EMRIC research project. 1266-1272
• 
  Jianfei Wu, Alexandre Boyer, Jiancheng Li, Sonia Bendhia, Bertrand Vrignon:
  LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing. 1273-1277
• 
  Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran:
  On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress. 1278-1283
• 
  Philippe Galy, T. Lim, J. Bourgeat, Jean Jimenez, Boris Heitz, D. Marin-Cudraz, Ph. Benech, J. M. Fournier:
  Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application. 1284-1287
• 
  Jian-Zhi Zhu, François Fouquet, Blaise Ravelo, A. Alaeddine, Moncef Kadi:
  Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS). 1288-1292
• 
  K. Guetarni, Antoine D. Touboul, Jerome Boch, L. Foro, A. Privat, Alain Michez, J.-R. Vaillé, Frédéric Saigné:
  Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model. 1293-1299
• 
  Alexandre Sarafianos, Cyril Roscian, Jean-Max Dutertre, Mathieu Lisart, Assia Tria:
  Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell. 1300-1305
• 
  Alain Michez, Jerome Boch, S. Dhombres, Frédéric Saigné, Antoine D. Touboul, J.-R. Vaillé, Laurent Dusseau, E. Lorfèvre, R. Ecoffet:
  Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET. 1306-1310
• 
  Luca Sterpone:
  SEL-UP: A CAD tool for the sensitivity analysis of radiation-induced Single Event Latch-Up. 1311-1314
• 
  Nogaye Mbaye, Vincent Pouget, Frédéric Darracq, Dean Lewis:
  Characterization and modeling of laser-induced single-event burn-out in SiC power diodes. 1315-1319
• 
  Jean-Max Dutertre, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, Giorgio Di Natale:
  Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection. 1320-1324
• 
  I. El Moukhtari, Vincent Pouget, C. Larue, Frédéric Darracq, Dean Lewis, Philippe Perdu:
  Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell. 1325-1328
• 
  Seung Min Lee, Hyun Jun Jang, Jong Tae Park:
  Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors. 1329-1332
• 
  Joan Marc Rafí, M. B. González, Kenichiro Takakura, I. Tsunoda, M. Yoneoka, Oihane Beldarrain, Miguel Zabala, Francesca Campabadal:
  2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al₂O₃ dielectrics of different thickness. 1333-1337
• 
  Pyung Moon, Jun Yeong Lim, Tae-Un Youn, Keum-Whan Noh, Sung-Kye Park, Ilgu Yun:
  Methodology for improvement of data retention in floating gate flash memory using leakage current estimation. 1338-1341
• 
  Vl. Kolkovsky, K. Lukat:
  Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO₂. 1342-1345
• 
  X. Saura, X. Lian, David Jiménez, Enrique Miranda, Xavier Borrisé, Francesca Campabadal, Jordi Suñé:
  Field-effect control of breakdown paths in HfO₂ based MIM structures. 1346-1350
• 
  Seonhaeng Lee, Cheolgyu Kim, Hyeokjin Kim, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
  Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs. 1351-1354
• 
  Cicero Nunes, Paulo F. Butzen, André Inácio Reis, Renato P. Ribas:
  BTI, HCI and TDDB aging impact in flip-flops. 1355-1359
• 
  Paulo F. Butzen, Vinícius Dal Bem, André Inácio Reis, Renato P. Ribas:
  BTI and HCI first-order aging estimation for early use in standard cell technology mapping. 1360-1364
• 
  Aymen Moujbani, Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein, Lutz Meinshausen:
  Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects. 1365-1369

Topic C: Advanced Techniques for Failure Analysis and case studies

• 
  Yasunori Goto, Toru Matsumoto, Kiyoshi Nikawa:
  Observation of impurity diffusion defect in IGBT using a laser terahertz emission microscope technique. 1370-1374
• 
  W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet:
  Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. 1375-1380
• 
  Emre Ilgünsatiroglu, Alexey Yu. Illarionov, Mauro Ciappa:
  Unstructured tetrahedric meshes for the description of complex three-dimensional sample geometries in Monte Carlo simulation of scanning electron microscopy images for metrology applications. 1381-1386
• 
  Samuel Chef, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak:
  Frequency mapping in dynamic light emission with wavelet transform. 1387-1392
• 
  Yann Weber, Julien Goxe, M. Castignolles:
  Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion. 1393-1398
• 
  Massimo Vanzi, Simona Podda, Elodia Musu, Robert Cao:
  XEBIC at the Dual Beam. 1399-1402
• 
  Franc Dugal, Mauro Ciappa:
  Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules. 1403-1408
• 
  Hiroaki Shiratsuchi, Kohei Matsushita, Ichiro Omura:
  IGBT chip current imaging system by scanning local magnetic field. 1409-1412
• 
  Ralf Heiderhoff, H. Li, Thomas Riedl:
  Dynamic Near-Field Scanning Thermal Microscopy on thin films. 1413-1417
• 
  Jan Gaudestad, Vladimir Talanov, M. Marchetti:
  Opens localization on silicon level in a Chip Scale Package using space domain reflectometry. 1418-1421
• 
  Kristian Bonderup Pedersen, Peter Kjær Kristensen, Vladimir N. Popok, Kjeld Pedersen:
  Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules. 1422-1426
• 
  Andreas Rummel, Klaus Schock, Matthias Kemmler, Andrew Smith, Stephan Kleindiek:
  Repairing bonding wire connections using a microsoldering unit inside an SEM. 1427-1429
• 
  Alexander Hofer, Roland Biberger, Günther Benstetter, Björn Wilke, Holger Göbel:
  Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films. 1430-1433
• 
  Chris Richardson, Gary Liechty, Clay Smith, Michael Karow:
  Contoured device sample preparation technique for ±5 μm remaining silicon thicknesses that meets solid immersion lens requirements. 1434-1438

Topic D1: Failures in Microwave, Wide Band-Gap Devices

• 
  P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann:
  Qualification of 50 V GaN on SiC technology for RF power amplifiers. 1439-1443
• 
  Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany:
  Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. 1444-1449
• 
  Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat:
  Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. 1450-1455
• 
  Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
  Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics. 1456-1460
• 
  Alessandro Chini, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni:
  Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. 1461-1465
• 
  Alain Bensoussan, Ronan Marec, Jean Luc Muraro, L. Portal, Philippe Calvel, Catherine Barillot, Marie Genevieve Perichaud, Laurent Marchand, Gael Vignon:
  GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing. 1466-1470
• 
  Andre G. Metzger, Vincenzo d'Alessandro, Niccolò Rinaldi, Peter J. Zampardi:
  Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers. 1471-1475
• 
  Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso:
  Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. 1476-1480
• 
  Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto:
  Thermal instability during short circuit of normally-off AlGaN/GaN HFETs. 1481-1485
• 
  Francesco Giuliani, Nicola Delmonte, Paolo Cova, Roberto Menozzi:
  Temperature-dependent reverse-bias stress of normally-off GaN power FETs. 1486-1490
• 
  S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau:
  Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. 1491-1495

Topic D2: Failures in Photonic Devices

• 
  Mauro A. Bettiati:
  High optical strength GaAs-based laser structures. 1496-1500
• 
  Vanesa Hortelano, Julian Anaya, Jorge Souto, Juan Jiménez, J. Périnet, François J. Laruelle:
  Defect signatures in degraded high power laser diodes. 1501-1505
• 
  Ephraim Suhir, Laurent Béchou:
  Saint-Venant's principle and the minimum length of a dual-coated optical fiber specimen in reliability (proof) testing. 1506-1509
• 
  Simone Vaccari, Matteo Meneghini, Alessio Griffoni, Diego Barbisan, Marco Barbato, S. Carraro, Marco La Grassa, Gaudenzio Meneghesso, Enrico Zanoni:
  ESD characterization of multi-chip RGB LEDs. 1510-1513
• 
  A. Royon, K. Bourhis, Laurent Béchou, Thierry Cardinal, Lionel Canioni, Yannick Deshayes:
  Durability study of a fluorescent optical memory in glass studied by luminescence spectroscopy. 1514-1518
• 
  Yang Gi Yoon, J. H. Kang, I. H. Jang, S. I. Chan, Joong Soon Jang:
  Conclusion of the accelerated stress conditions affecting phosphor-converted LEDs using the fractional factorial design method. 1519-1523
• 
  Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni:
  "Hot-plugging" of LED modules: Electrical characterization and device degradation. 1524-1528
• 
  Massimo Vanzi, Giovanna Mura, M. Marongiu, T. Tomasi:
  Optical losses in single-mode laser diodes. 1529-1533
• 
  Carlo De Santi, Matteo Meneghini, S. Carraro, Simone Vaccari, Nicola Trivellin, Stefania Marconi, Michael Marioli, Gaudenzio Meneghesso, Enrico Zanoni:
  Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes. 1534-1537
• 
  Giovanna Mura, Massimo Vanzi, Giulia Marcello, Robert Cao:
  The role of the optical trans-characteristics in laser diode analysis. 1538-1542

Topic E1: Packaging, Assemblies

• 
  Toshitaka Ishizaki, T. Satoh, A. Kuno, A. Tane, Masashi Yanase, F. Osawa, Yasushi Yamada:
  Thermal characterizations of Cu nanoparticle joints for power semiconductor devices. 1543-1547
• 
  Ju Dy Lim, Susan Yeow Su Yi, MinWoo Daniel Rhee, Kam Chew Leong, Chee Cheong Wong:
  Surface roughness effect on copper-alumina adhesion. 1548-1552
• 
  Peter Jacob, Giovanni Nicoletti:
  Failure causes generating aluminium protrusion/extrusion. 1553-1557
• 
  Bernhard Czerny, I. Paul, Golta Khatibi, Markus Thoben:
  Experimental and analytical study of geometry effects on the fatigue life of Al bond wire interconnects. 1558-1562
• 
  Peyman Rafiee, Golta Khatibi, N. Nelhiebel, Rainer Pelzer:
  Application of quantitative modal analysis for investigation of thermal degradation of microelectronic packages. 1563-1567
• 
  Miao Cai, D. J. Xie, W. B. Chen, B. Y. Wu, Dao-Guo Yang, G. Q. Zhang:
  A novel soldering method to evaluate PCB pad cratering for pin-pull testing. 1568-1574
• 
  Lutz Meinshausen, Hélène Frémont, Kirsten Weide-Zaage, Bernard Plano:
  Electro- and thermomigration-induced IMC formation in SnAg_3.0Cu_0.5 solder joints on nickel gold pads. 1575-1580
• 
  F. L. Lau, Riko I. Made, Wahyuaji Narottama Putra, J. Z. Lim, V. C. Nachiappan, J. L. Aw, Chee Lip Gan:
  Electrical behavior of Au-Ge eutectic solder under aging for solder bump application in high temperature Electronics. 1581-1586
• 
  Peter Borgesen, S. Hamasha, Mazin Obaidat, V. Raghavan, X. Dai, Michael Meilunas, M. Anselm:
  Solder joint reliability under realistic service conditions. 1587-1591
• 
  Raphel Riva, Cyril Buttay, Bruno Allard, Pascal Bevilacqua:
  Migration issues in sintered-silver die attaches operating at high temperature. 1592-1596
• 
  J. B. Jullien, Hélène Frémont, Jean-Yves Delétage:
  Conductive adhesive joint for extreme temperature applications. 1597-1601
• 
  Anderson Pires Singulani, Hajdin Ceric, Siegfried Selberherr:
  Stress evolution in the metal layers of TSVs with Bosch scallops. 1602-1605
• 
  Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein:
  Dynamic simulation of octahedron slotted metal structures. 1606-1610
• 
  Nicola Delmonte, Francesco Giuliani, Paolo Cova:
  Finite element modeling and characterization of lead-free solder joints fatigue life during power cycling of surface mounting power devices. 1611-1616
• 
  Wissam Sabbah, Stephane Azzopardi, Cyril Buttay, Régis Meuret, Eric Woirgard:
  Study of die attach technologies for high temperature power electronics: Silver sintering and gold-germanium alloy. 1617-1621

Topic E2: Passive Components and MEMS

• 
  Pierre-Louis Charvet, Pierre Nicolas, D. Bloch, B. Savornin:
  MEMS packaging reliability assessment: Residual Gas Analysis of gaseous species trapped inside MEMS cavities. 1622-1627
• 
  Mohamed Ayadi, Olivier Briat, Akram Eddahech, Ronan German, Gerard Coquery, Jean-Michel Vinassa:
  Thermal cycling impacts on supercapacitor performances during calendar ageing. 1628-1631
• 
  Jae-Seong Jeong:
  Field failure mechanism and reproduction due to moisture for low-voltage ZnO varistors. 1632-1637
• 
  Amrane Oukaour, Mathieu Pouliquen, Boubekeur Tala-Ighil, Hamid Gualous, Eric Pigeon, Olivier Gehan, Bertrand Boudart:
  Supercapacitors aging diagnosis using least square algorithm. 1638-1642
• 
  Ronan German, Olivier Briat, Ali Sari, Pascal Venet, Mohamed Ayadi, Younes Zitouni, Jean-Michel Vinassa:
  Impact of high frequency current ripple on supercapacitors ageing through floating ageing tests. 1643-1647
• 
  J. Keller, Raul Mrossko, H. Dobrinski, J. Stürmann, Ralf Döring, Rainer Dudek, Sven Rzepka, Bernd Michel:
  Effect of moisture swelling on MEMS packaging and integrated sensors. 1648-1654
• 
  Matroni Koutsoureli, Loukas Michalas, P. Martins, E. Papandreou, A. Leuliet, S. Bansropun, George J. Papaioannou, A. Ziaei:
  Properties of contactless and contacted charging in MEMS capacitive switches. 1655-1658
• 
  Nuria Torres Matabosch, Fabio Coccetti, Mehmet Kaynak, Beatrice Espana, Bernd Tillack, Jean-Louis Cazaux:
  Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process. 1659-1662
• 
  B. Wang, Jeroen De Coster, Martine Wevers, Ingrid De Wolf:
  A novel method to measure the internal pressure of MEMS thin-film packages. 1663-1666
• 
  Jun-Yong Tao, Xiao-Jing Wang, Bin Liu, Yan-Lei Wang, Zhi-Qian Ren, Xun Chen:
  Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping. 1667-1671
• 
  Yun-An Zhang, Jun-Yong Tao, Yan-Lei Wang, Zhi-Qian Ren, Bin Liu, Xun Chen:
  The effect of water on the mechanical properties of native oxide coated silicon structure in MEMS. 1672-1675
• 
  Marcantonio Catelani, Lorenzo Ciani, Mirko Marracci, Bernardo Tellini:
  Analysis of ultracapacitors ageing in automotive application. 1676-1680

Topic F: Power devices

• 
  Peter Dietrich:
  Trends in automotive power semiconductor packaging. 1681-1686
• 
  Uwe Scheuermann, R. Schmidt:
  Impact of load pulse duration on power cycling lifetime of Al wire bonds. 1687-1691
• 
  Akihiko Watanabe, Masanori Tsukuda, Ichiro Omura:
  Real time degradation monitoring system for high power IGBT module under power cycling test. 1692-1696
• 
  Amadou Sow, Sinivassane Somaya, Yves Ousten, Jean-Michel Vinassa, Fanny Patoureaux:
  Power MOSFET active power cycling for medical system reliability assessment. 1697-1702
• 
  Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy:
  Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications. 1703-1706
• 
  Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi:
  Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. 1707-1712
• 
  Vincenzo d'Alessandro, Alessandro Magnani, Michele Riccio, Yohei Iwahashi, Giovanni Breglio, Niccolò Rinaldi, Andrea Irace:
  Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations. 1713-1718
• 
  F. Baccar, Stephane Azzopardi, L. Théolier, K. El Boubkari, Jean-Yves Delétage, Eric Woirgard:
  Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach. 1719-1724
• 
  Jeff Moussodji, Thierry Kociniewski, Zoubir Khatir:
  Distributed electro-thermal model of IGBT chip - Application to top-metal ageing effects in short circuit conditions. 1725-1729
• 
  Takuo Kikuchi, Mauro Ciappa:
  A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs. 1730-1734
• 
  D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene:
  Robustness of 1.2 kV SiC MOSFET devices. 1735-1738
• 
  Michele Riccio, Alberto Castellazzi, Giuseppe De Falco, Andrea Irace:
  Experimental analysis of electro-thermal instability in SiC Power MOSFETs. 1739-1744
• 
  Michael Nelhiebel, Robert Illing, Thomas Detzel, S. Wöhlert, B. Auer, S. Lanzerstorfer, M. Rogalli, W. Robl, Stefan Decker, J. Fugger, Markus Ladurner:
  Effective and reliable heat management for power devices exposed to cyclic short overload pulses. 1745-1749
• 
  Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel, Jean-Michel Reynes, Jean-Luc Massol, E. Pomes:
  Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling. 1750-1754
• 
  Tilo Poller, Salvatore D'Arco, Magnar Hernes, Atle Rygg Årdal, Josef Lutz:
  Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs. 1755-1759
• 
  Paolo Cova, Nicola Delmonte, Francesco Giuliani, Mauro Citterio, Stefano Latorre, Massimo Lazzaroni, Agostino Lanza:
  Thermal optimization of water heat sink for power converters with tight thermal constraints. 1760-1765
• 
  Koji Sasaki, Nobutada Ohno:
  Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing. 1766-1770
• 
  Li Yang, Alberto Castellazzi:
  High temperature gate-bias and reverse-bias tests on SiC MOSFETs. 1771-1773
• 
  Aaron Hutzler, Adam Tokarski, Andreas Schletz:
  Extending the lifetime of power electronic assemblies by increased cooling temperatures. 1774-1777
• 
  Masayuki Yoshimura, Atsushi Uchida, Satoshi Matsumoto:
  Design issues of a thin-film p-channel SOI power MOSFET for high-temperature applications. 1778-1782
• 
  Luca Maresca, Gianpaolo Romano, Giovanni Breglio, Andrea Irace:
  Physically based analytical model of the blocking I-V curve of Trench IGBTs. 1783-1787
• 
  Rui Wu, Frede Blaabjerg, Huai Wang, Marco Liserre:
  Overview of catastrophic failures of freewheeling diodes in power electronic circuits. 1788-1792
• 
  Mohamed Tlig, Jaleleddine Ben Hadj Slama, Mohamed Ali Belaïd:
  Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests. 1793-1797

Topic G: Reliability of Photovoltaic and Organic devices: Thin Film, concentration, OLED, TFT

• 
  Nicola Wrachien, Andrea Cester, Daniele Bari, Raffaella Capelli, Riccardo D'Alpaos, Michele Muccini, Andrea Stefani, Guido Turatti, Gaudenzio Meneghesso:
  Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric. 1798-1803
• 
  Daniele Bari, Nicola Wrachien, R. Tagliaferro, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, Andrea Cester:
  Comparison between positive and negative constant current stress on dye-sensitized solar cells. 1804-1808
• 
  Alessandro Compagnin, Matteo Meneghini, Marco Barbato, Valentina Giliberto, Andrea Cester, Massimo Vanzi, Giovanna Mura, Enrico Zanoni, Gaudenzio Meneghesso:
  Thermal and electrical investigation of the reverse bias degradation of silicon solar cells. 1809-1813
• 
  Hyun Jun Jang, Seung Min Lee, Chong-Gun Yu, Jong Tae Park:
  A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors. 1814-1817
• 
  N. C. Park, J. S. Jeong, B. J. Kang, D. H. Kim:
  The effect of encapsulant discoloration and delamination on the electrical characteristics of photovoltaic module. 1818-1822
• 
  T. H. Kim, N. C. Park, D. H. Kim:
  The effect of moisture on the degradation mechanism of multi-crystalline silicon photovoltaic module. 1823-1827

Volume 53, Number 12, December 2013

Research Papers

• 
  Takuya Naoe, Tamao Ikeuchi, Chie Moritni, Hirohiko Endoh, Kohichi Yokoyama:
  Local damage free Si substrate ultra thinning for backside emission spectral analysis using OBPF for LSI failure mode detection. 1829-1840
• 
  Zahir Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey:
  Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. 1841-1847
• 
  Xueqian Zhong, Li Zhang, Gang Xie, Qing Guo, Tao Wang, Kuang Sheng:
  High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure. 1848-1856
• 
  R. Foissac, S. Blonkowski, M. Kogelschatz, P. Delcroix, M. Gros-Jean, F. Bassani:
  Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy. 1857-1862
• 
  Hei Wong, B. L. Yang, Shurong Dong:
  Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique. 1863-1867
• 
  Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe:
  Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. 1868-1874
• 
  Dong-Suk Han, Jae-Hyung Park, Yu-Jin Kang, Jong-Wan Park:
  Effects of zirconium doping on the characteristics of tin oxide thin film transistors. 1875-1878
• 
  Runze Zhan, Chengyuan Dong, Po-Tsun Liu, Han-Ping D. Shieh:
  Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors. 1879-1885
• 
  Lingfeng Mao:
  Quantum size impacts on the threshold voltage in nanocrystalline silicon thin film transistors. 1886-1890
• 
  Jie Chen, Zhengwei Du:
  Understanding and modeling of internal transient latch-up susceptibility in CMOS inverters due to microwave pulses. 1891-1896
• 
  Hsien-Chin Chiu, Chao-Hung Chen, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang:
  Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis. 1897-1900
• 
  Murat Soylu, Omar A. Al-Hartomy, Said A. Farha Al Said, Ahmed A. Al-Ghamdi, I. S. Yahia, Fahrettin Yakuphanoglu:
  Controlling of conduction mechanism and electronic parameters of silicon-metal junction by mixed Methylene Blue/2′-7′-dichlorofluorescein. 1901-1906
• 
  D. A. van den Ende, Roel H. L. Kusters, Maarten Cauwe, A. van der Waal, Jeroen van den Brand:
  Large area flexible lighting foils using distributed bare LED dies on polyester substrates. 1907-1915
• 
  Han-Kuei Fu, Yi Ping Peng, Shang Pin Ying, Tzung-Te Chen, Chien-Ping Wang, Chiu-Ling Chen, Pei-Ting Chou:
  The evaluation for the chromatic characteristics of LED module under electrical and thermal coupling analysis. 1916-1921
• 
  Nochang Park, Changwoon Han, Donghwan Kim:
  Effect of moisture condensation on long-term reliability of crystalline silicon photovoltaic modules. 1922-1926
• 
  Hwen-Fen Hong, Tsung-Shiew Huang, Mei-Hui Chiang, Zun-Hao Shih:
  Degradation mechanism of concentrator solar receivers without protection layer. 1927-1932
• 
  Robert Skuriat, Jianfeng Li, Pearl A. Agyakwa, Nevil Mattey, Paul Evans, C. Mark Johnson:
  Degradation of thermal interface materials for high-temperature power electronics applications. 1933-1942
• 
  Nay Lin, Jianmin Miao, Pradeep Dixit:
  Void formation over limiting current density and impurity analysis of TSV fabricated by constant-current pulse-reverse modulation. 1943-1953
• 
  Tooraj Yousefi, Seyyed Arash Mousavi, B. Farahbakhsh, M. Z. Saghir:
  Experimental investigation on the performance of CPU coolers: Effect of heat pipe inclination angle and the use of nanofluids. 1954-1961
• 
  Zhiwei Li, Hua Li, Fuchang Lin, Yaohong Chen, De Liu, Bowen Wang, Haoyuan Li, Qin Zhang:
  Lifetime investigation and prediction of metallized polypropylene film capacitors. 1962-1967
• 
  Hongjin Jiang, Kyoung-sik Moon, C. P. Wong:
  Recent advances of nanolead-free solder material for low processing temperature interconnect applications. 1968-1978
• 
  Ted Sun, Ayhan A. Mutlu, Mahmudur Rahman:
  A new statistical methodology predicting chip failure probability considering electromigration. 1979-1986
• 
  Bladimir Ramos-Alvarado, David Brown, Xiuping Chen, Bo Feng, G. P. Peterson:
  On the assessment of voids in the thermal interface material on the thermal performance of a silicon chip package. 1987-1995
• 
  W. C. Leong, Mohd Zulkifly Abdullah, C. Y. Khor:
  Optimization of flexible printed circuit board electronics in the flow environment using response surface methodology. 1996-2004
• 
  Tomoya Daito, Hiroshi Nishikawa, Tadashi Takemoto, Takashi Matsunami:
  Explanation of impact load curve in ball impact test in relation to thermal aging. 2005-2011
• 
  Chin-Hung Kuo, Hsin-Hui Hua, Ho-Yang Chan, Tsung-Hsun Yang, Kuen-Song Lin, Cheng-En Ho:
  Interfacial reaction and mechanical reliability of PTH solder joints with different solder/surface finish combinations. 2012-2017
• 
  Tingbi Luo, Zhuo Chen, Anmin Hu, Ming Li, Peng Li:
  Study on low-Ag content Sn-Ag-Zn/Cu solder joints. 2018-2029
• 
  Guanghua Wu, Bo Tao, Zhouping Yin:
  Study on the shear strength degradation of ACA joints induced by different hygrothermal aging conditions. 2030-2035
• 
  Jeong-Won Yoon, Min-Kwan Ko, Bo-In Noh, Seung-Boo Jung:
  Joint reliability evaluation of thermo-compression bonded FPCB/RPCB joints under high temperature storage test. 2036-2042
• 
  Yusuf Cinar, Jinwoo Jang, Gunhee Jang, Seonsik Kim, Jaeseok Jang:
  Effect of solder pads on the fatigue life of FBGA memory modules under harmonic excitation by using a global-local modeling technique. 2043-2051
• 
  Nishad Patil, Diganta Das, Estelle Scanff, Michael G. Pecht:
  Long term storage reliability of antifuse field programmable gate arrays. 2052-2056
• 
  I-Chyn Wey, Yi-Jung Lan, Chien-Chang Peng:
  Reliable ultra-low-voltage low-power probabilistic-based noise-tolerant latch design. 2057-2069
• 
  Eduardas Bareisa, Vacius Jusas, Kestutis Motiejunas, Rimantas Seinauskas:
  Delay fault testing using partial multiple scan chains. 2070-2077

Book Reviews

• 
  Vallayil N. A. Naikan:
  Life Cycle Reliability Engineering, Guangbin Yang. John Wiley & Sons, Inc. (2007), p. 517. ISBN: 978-0-471-71529-0. 2078
• 
  Vojkan Davidovic:
  Nanoelectronic Devices, B.-G. Park, S.W. Hwang, Y.J. Park. Pan Stanford Publishing Pte. Ltd., Singapore (2012). 406 p., ISBN: 978-981-4364-00-3. 2079