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ISSCC 2024: San Francisco, CA, USA
- IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024. IEEE 2024, ISBN 979-8-3503-0620-0
- Hyo-Jin Park, Joo-Mi Cho, Chan-Ho Lee, Young-Ju Oh, Hyunwoo Jeong, Jun-Hyeok Yang, Jaeseung Lee, Sung-Wan Hong:
8.8 A 97.18% Peak-Efficiency Asymmetrically Implemented Dual-phase (AID) Converter with a full Voltage-Conversion Ratio (VCR) between 0-and-1. 1-3 - Zehui Kang, Chen Yu, Liang Wu:
19.3 An 8.9-to-21.9GHz Single-Core Oscillator with Reconfigurable Class-F-1 and Enhanced-Colpitts Dual-Mode Operation Achieving 209dBc/Hz FoMT. 1-3 - Loïck Le Guevel, Chen Wang, Joseph C. Bardin:
29.1 A 22nm FD-SOI <1.2mW/Active-Qubit AWG-Free Cryo-CMOS Controller for Fluxonium Qubits. 1-3 - Gang Liu, Han Wu, Chen Hu, Cheng Huang, Xun Liu, Junmin Jiang:
31.9 An 85-264Vac to 3-4.2Vdc 1.05W Capacitive Power Converter with Idle Power Reduction and 4-Phase 1/10X SC Converter Achieving 5.11mW Quiescent Power and 78.2% Peak Efficiency. 1-3 - Kevin Zhang:
1.1 Semiconductor Industry: Present & Future. 10-15 - Bram Nauta:
1.2 Racing Down the Slopes of Moore's Law. 16-23 - Jonah Alben:
1.3 Computing in the Era of Generative AI. 26-28 - Lip-Bu Tan:
1.4 Fueling Semiconductor Innovation and Entrepreneurship in the Next Decade. 29-33 - Anshul Varma, Sumanth Gururajarao, HsinChen Chen, Tao Chen, Gordon Gammie, Hugh Mair, Jen-Hang Yang, Hao-Hsiang Yu, Shun-Chieh Chang, Cheng-Hao Yang, Li-An Huang, Kumar Ramanathan, Ramesh Halli, Efron Ho, Ta-Wen Hung, Sung S.-Y. Hsueh, LiangChe Li, Achuta Thippana, Ericbill Wang, Sa Hwang:
2.1 A 4nm 3.4GHz Tri-Gear Fully Out-of-Order ARMv9.2 CPU Subsystem-Based 5G Mobile SoC. 36-38 - Thomas Burd, Srividhya Venkataraman, Wilson Li, Timothy Johnson, Jerry Lee, Srikirti Velaga, Mark Wasio, Thomas Yiu, Franklin Bodine, Michael McCabe, Udin Salim, Santosh Kumar Thouta, Michael Golden, Sowmya Ramachandran, Gokul Subramani Lakshmi Devi, John Wu, Yarek Kuszczak, Gaurav Singla, Carson Henrion, Andy Robison, Sabeesh Balagangadharan, Umesh Nair, Naveen Srivastava, Hari Prasad, Mohini Polimetla, Phaneendra Chennupati, Eshwar Gupta, Mahesh Vykuntam, Sumantra Sarkar, Praveen Kumar Duvvuru, Theja Mardi, G. Swetha:
2.2 "Zen 4c": The AMD 5nm Area-Optimized ×86-64 Microprocessor Core. 38-40 - Ashley O. Munch, Nevine Nassif, Carleton L. Molnar, Jason Crop, Rich Gammack, Chinmay P. Joshi, Goran Zelic, Kambiz Munshi, Min Huang, Charles Morganti, Sireesha Kandula, Arijit Biswas:
2.3 Emerald Rapids: 5th-Generation Intel® Xeon® Scalable Processors. 40-42 - Chang-Hyo Yu, Hyo-Eun Kim, Sungho Shin, Kyeongryeol Bong, Hyunsuk Kim, Yoonho Boo, Jaewan Bae, Minjae Kwon, Karim Charfi, Jinseok Kim, Hongyun Kim, Myeongbo Shim, Changsoo Ha, Wongyu Shin, Jae-Sung Yoon, Miock Chi, Byungjae Lee, Sungpill Choi, Donghan Kim, Jeongseok Woo, Seokju Yoon, Hyunje Jo, Hyunho Kim, Hyun-Seok Heo, Young-Jae Jin, Jiun Yu, Jaehwan Lee, Hyunsung Kim, Minhoo Kang, Seokhyeon Choi, Seung-Goo Kim, Myung-Hoon Choi, Jungju Oh, Yunseong Kim, Haejoon Kim, Sangeun Je, Junhee Ham, Juyeong Yoon, Jaedon Lee, Seonhyeok Park, Youngseob Park, Jaebong Lee, Boeui Hong, Jaehun Ryu, Hyunseok Ko, Kwanghyun Chung, Jongho Choi, Sunwook Jung, Yashael Faith Arthanto, Jonghyeon Kim, Heejin Cho, Hyebin Jeong, Sungmin Choi, Sujin Han, Junkyu Park, Kwangbae Lee, Sung-Il Bae, Jaeho Bang, Kyeong-Jae Lee, Yeongsang Jang, Jungchul Park, Sanggyu Park, Jueon Park, Hyein Shin, Sunghyun Park, Jinwook Oh:
2.4 ATOMUS: A 5nm 32TFLOPS/128TOPS ML System-on-Chip for Latency Critical Applications. 42-44 - Shiyu Guo, Sachin S. Sapatnekar, Jie Gu:
2.5 A 28nm Physical-Based Ray-Tracing Rendering Processor for Photorealistic Augmented Reality with Inverse Rendering and Background Clustering for Mobile Devices. 44-46 - Tang Lee, Ting-Yang Chen, I-Hsuan Liu, Chia-Hsiang Yang:
2.6 A 131mW 6.4Gbps 256×32 Multi-User MIMO OTFS Detector for Next-Gen Communication Systems. 46-48 - Yi Zhang, Wenyue Zhou, Yiwei Zhang, Houren Ji, Yongming Huang, Xiaohu You, Chuan Zhang:
2.7 BayesBB: A 9.6Gbps 1.61ms Configurable All-MessagePassing Baseband-Accelerator for B5G/6G Cell-Free Massive-MIMO in 40nm CMOS. 48-50 - Dongyun Kam, Sangbu Yun, Jeongwon Choe, Zhengya Zhang, Namyoon Lee, Youngjoo Lee:
2.8 A 21.9ns 15.7 Gbps/mm² (128,15) BOSS FEC Decoder for 5G/6G URLLC Applications. 50-52 - Pangi Park, Junghyup Lee, SeongHwan Cho:
3.1 A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm/°C from -20°C to 125°C. 54-56 - Sining Pan, Yihang Cheng, Guohua Wu, Zhihua Wang, Kofi A. A. Makinwa, Huaqiang Wu:
3.2 A 0.028mm² 32MHz RC Frequency Reference in 0.18μm CMOS with ±900ppm Inaccuracy from -40°C to 125°C and ±1600ppm Inaccuracy After Accelerated Aging. 56-58 - Rui Luo, Ka-Meng Lei, Rui Paulo Martins, Pui-In Mak:
3.3 A 0.5V 6.14μW Trimming-Free Single-XO Dual-Output Frequency Reference with [5.1nJ, 120μs] XO Startup and [8.1nJ, 200μs] Successive-Approximation-Based RTC Calibration. 58-60 - Zhong Tang, Yuyan Liu, Pengpeng Chen, Haining Wang, Xiaopeng Yu, Kofi A. A. Makinwa, Nianxiong Nick Tan:
3.4 A 14b 98Hz-to-5.9kHz 1.7-to-50.8 μ W BW/Power Scalable Sensor Interface with a Dynamic Bandgap Reference and an Untrimmed Gain Error of ± 0.26 % from -40°C to 125°C. 60-62 - Ippei Akita, Shunichi Tatematsu:
3.5 A 4mW 45pT/√Hz Magnetoimpedance-Based ΔΣ Magnetometer with Background Gain Calibration and Short-Time CDS Techniques. 62-64 - Muhammad Abrar Akram, Aida Aberra, Soon-Jae Kweon, Sohmyung Ha:
3.6 An Amplifier-Less CMOS Potentiostat IC Consuming 3.7nW Power all over 129.5dB Dynamic Range for Electrochemical Biosensing. 64-66 - Nandor G. Toth, Kofi A. A. Makinwa:
3.7 A β-Compensated NPN-Based Temperature Sensor with ±0.1°C (3σ) Inaccuracy from -55°C to 125°C and a 200fJ·K2 Resolution FoM. 66-68 - Bei-Shing Lien, Szu Lin Liu, Wei-Lin Lai, Yi-Chen Lu, Yung-Chow Peng, Kenny Cheng-Hsiang Hsieh:
3.8 A 0.65V 900µm² BEoL RC-Based Temperature Sensor with ±1°C Inaccuracy from -25°C to 125°C. 68-70 - Sangheon Lee, Jinwoo Park, Junsang Park, Sangkyu Lee, Jungho Lee, Youngjae Cho, Michael Choi, Jongshin Shin:
3.9 A 1.2V High-Voltage-Tolerant Bootstrapped Analog Sampler in 12-bit SAR ADC Using 3nm GAA's 0.7V Thin-Gate-Oxide Transistor. 70-72 - Xinhang Xu, Siyuan Ye, Yaohui Luan, Jihang Gao, Jie Li, Jiajia Cui, Hao Zhang, Ru Huang, Linxiao Shen, Le Ye:
3.10 A 0.69/0.58-PEF 1.6nW/24nW Capacitively Coupled Chopper Instrumentation Amplifier with an Input-Boosted First Stage in 22nm/180nm CMOS. 72-74 - Nikolaj Andersen, Sumit Bagga, Jørgen Andreas Michaelsen, Håkon A. Hjortland, Lieuwe B. Leene, Torleif Skår, Espen Stenersen, Dag T. Wisland:
4.1 A 79.7μW Two-Transceiver Direct-RF 7.875GHz UWB Radar SoC in 40nm CMOS. 76-78 - Jongsoo Lee, Jaehyuk Jang, Wooseok Lee, Bosung Suh, Heeyong Yoo, Beomyu Park, Jeongkyun Woo, Jaeeun Jang, Inhyo Ryu, Honggul Han, Jaeyoung Kim, Byoungjoong Kang, Minchul Kang, Hojung Kang, John H. Kang, Minseob Lee, Danbi Lee, Hyeonuk Son, Suhyeon Lee, Soyeon Kim, Hongjong Park, Sangsung Lee, Jeongyeol Bae, Huijung Kim, Joonhee Lee, Sangmin Yoo:
4.2 A Tri-Band Dual-Concurrent Wi-Fi 802.11be Transceiver Achieving -46dB TX/RX EVM Floor at 7.1GHz for a 4K-QAM 320MHz Signal. 78-80 - Jeongyeol Bae, Sangsung Lee, Joonggeun Lee, Ikkyun Jo, Heesoo Kim, Kyunghyun Yoon, Taejong Kim, Jiyoung Lee, Myunghun Lee, Jaeseung Lee, Jongmin Jeong, Sungjun Lee, Taewan Kim, Sungjoo Kim, Gwangsik Cho, Duksoo Kim, Sangyun Lee, Pilsung Jang, Euibong Yang, Jeongmin Song, Gwangchun Park, Se-Eun Choi, Juhee Son, Won Ko, Jonghyun Kim, Seong Ho Park, Sangho Lee, Yoonki Lee, Euiyoung Park, Pillseong Kang, Taeyeon Kim, Hyojin Lee, Byungki Han, Joonhee Lee, Jongsoo Lee, Sangmin Yoo:
4.3 A 43mm2 Fully Integrated Legacy Cellular and 5G FR1 RF Transceiver with 24RX/3TX Supporting Inter-Band 7CA/5CA 4×4 MIMO with 1K-QAM. 80-82 - Jiaxiang Li, Zimu Li, Yun Yin, Changgu Yan, Nan Qi, Ming Liu, Hongtao Xu:
4.4 A Highly-Integrated 6-Phase Cell-Reused Digital Transmitter Using 1/3 Duty-Cycle LO Signals for Harmonic Rejection. 82-84 - John Zhong, Konstantinos Vasilakopoulos, Antonio Liscidini:
4.5 A Reconfigurable, Multi-Channel Quantized-Analog Transmitter with <-35dB EVM and <-51dBc ACLR in 22nm FDSOI. 84-86 - Hao Xu, Junyan Bi, Tenghao Zou, Weitao He, Yaxin Zeng, Junjie Gu, Ziyang Jiao, Shubin Liu, Zhangming Zhu, Na Yan:
5.1 A 5-to-16GHz Reconfigurable Quadrature Receiver with 50% Duty-Cycle LO and IQ-Leakage Suppression. 88-90 - Soroush Araei, Shahabeddin Mohin, Negar Reiskarimian:
5.2 0.25-to-4GHz Harmonic-Resilient Receiver with Built-In HR at Antenna and BB Achieving +14/+16.5dBm 3rd/5th IB Harmonic B1dB. 90-92 - Mostafa M. Ayesh, Soumya Mahapatra, Ce Yang, Mike Shuo-Wei Chen:
5.3 A 0.072mm2 18-to-21GHz Non-Uniform Sub-Sampling Receiver with a Non-Uniform Discrete-Time FIR Filter Achieving 42dB Blocker Rejection in 28nm CMOS. 92-94 - Yiming Yu, Bohan Sun, Mengqian Geng, Chenxi Zhao, Huihua Liu, Yunqiu Wu, Jingzhi Zhang, Kai Kang:
5.4 A 22.4-to-30.7GHz Phased-Array Receiver with Beam-Pattern Null-Steering and Beam-Tracking Techniques Achieving >30.2dB OTA-Tested Spatial Rejection. 94-96 - Stef van Zanten, Ronan A. R. van der Zee, Bram Nauta:
5.5 A Stacking Mixer-First Receiver Achieving >20dBm Adjacent-Channel IIP3 Consuming less than 25mW. 96-98 - Ernest So, Amin Arbabian:
6.1 12Mb/s 4×4 Ultrasound MIMO Relay with Wireless Power and Communication for Neural Interfaces. 100-102 - Marios Gourdouparis, Chengyao Shi, Yuming He, Stefano Stanzione, Robert Ukropec, Pieter Gijsenbergh, Veronique Rochus, Nick Van Helleputte, Wouter A. Serdijn, Yao-Hong Liu:
6.2 An Ultrasound-Powering TX with a Global Charge-Redistribution Adiabatic Drive Achieving 69% Power Reduction and 53° Maximum Beam Steering Angle for Implantable Applications. 102-104 - Japesh Vohra, Animesh Gupta, Massimo Alioto:
6.3 Imager with In-Sensor Event Detection and Morphological Transformations with 2.9pJ/pixel×frame Object Segmentation FOM for Always-On Surveillance in 40nm. 104-106 - Imad Bellouki, Nuriel Rozsa, Zu-Yao Chang, Zhao Chen, Mingliang Tan, Michiel A. P. Pertijs:
6.4 A Resonant High-Voltage Pulser for Battery-Powered Ultrasound Devices. 106-108 - Jiaqi Guo, Junwei Feng, Silin Chen, Liuhao Wu, Chne-Wuen Tsai, Yingna Huang, Bochi Lin, Jerald Yoo:
6.5 A 0.5° - Resolution Hybrid Dual-Band Ultrasound Imaging SoC for UAV Applications. 108-110 - Su-Hyun Han, Seonghyeok Park, Jung-Hoon Chun, Jaehyuk Choi, Seong-Jin Kim:
6.7 A 160×120 Flash LiDAR Sensor with Fully Analog-Assisted In- Pixel Histogramming TDC Based on Self-Referenced SAR ADC. 112-114 - Chaorui Zou, Yaozhong Ou, Yan Zhu, Rui Paulo Martins, Chi-Hang Chan, Minglei Zhang:
6.8 A 256×192-Pixel 30fps Automotive Direct Time-of-Flight LiDAR Using 8× Current-Integrating-Based TIA, Hybrid Pulse Position/Width Converter, and Intensity/CNN-Guided 3D Inpainting. 114-116 - Xuecheng Wang, Zheng Huang, Tianyi Liu, Wanxin Shi, Hongwei Chen, Milin Zhang:
6.9 A 0.35V 0.367TOPS/W Image Sensor with 3-Layer Optical-Electronic Hybrid Convolutional Neural Network. 116-118 - DongHyun Kim, Kwansik Cho, Ho-Chul Ji, Minkyung Kim, Junghye Kim, Taehoon Kim, Seungju Seo, Dongmo Im, You-Na Lee, Jinyong Choi, Sunghyun Yoon, Inho Noh, Jinhyung Kim, Khang June Lee, Hyesung Jung, Jongyoon Shin, Hyuk Hur, Kyoung Eun Chang, Incheol Cho, Kieyoung Woo, Byung Seok Moon, Jameyung Kim, Yeonsoo Ahn, Dahee Sim, Sungbong Park, Wook Lee, Kooktae Kim, Chong Kwang Chang, Hansik Yoon, Juha Kim, Sung-In Kim, Hyunchul Kim, Chang-Rok Moon, Jaihyuk Song:
6.10 A 1/1.56-inch 50Mpixel CMOS Image Sensor with 0.5μm pitch Quad Photodiode Separated by Front Deep Trench Isolation. 118-120 - Minkyung Kim, Hyeongseok Seo, Songhyeon Kim, Jung-Hoon Chun, Seong-Jin Kim, Jaehyuk Choi:
6.11 A 320x240 CMOS LiDAR Sensor with 6-Transistor nMOS-Only SPAD Analog Front-End and Area-Efficient Priority Histogram Memory. 120-122 - J. Q. Wang, Amber Tan, Amrutha Iyer, A. Fan, A. Farhoodfar, B. Alnabulsi, B. Smith, Chang-Feng Loi, Cheng-Ru Ho, D. Cartina, Jamal Riani, J. Casanova, Karthik Raviprakash, L. Patra, Luke Wang, M. Bachu, Sagar Ray, Sau Siong Chong, S. Dallaire, The Linh Nguyen, Tzu-Fan Wu, Vishal Giridharan, V. Gurumoorthy, X. Ding, Y. Yin, Zhuochao Sun, Steve Jantzi, Lawrence Tse:
7.1 A 2.69pJ/b 212Gb/s DSP-Based PAM-4 Transceiver for Optical Direct-Detect Application in 5nm FinFET. 123-125 - Marco Cusmai, Noam Familia, Elad Kuperberg, Mohammad Nashash, Dovid Gottesman, Daljeet Kumar, Zvi Marcus, Yeshayahu Horwitz, Sagi Zalcman, Jihwan Kim, Sandipan Kundu, Ilia Radashkevich, Yoav Segal, Dror Lazar, Udi Virobnik, Mike Peng Li, Ariel Cohen:
7.2 A 224Gb/s sub pJ/b PAM-4 and PAM-6 DAC-Based Transmitter in 3nm FinFET. 126-128 - Dirk Pfaff, Muhammad Nummer, Noman Hai, Peter Xia, Kai Ge Yang, Mohammad-Mahdi Mohsenpour, Marc-Andre LaCroix, Babak Zamanlooy, Tom Eeckelaert, Dmitry Petrov, Mostafa Haroun, Carson Dick, Alif Zaman, Haitao Mei, Shahab Moazzeni, Tahseen Shakir, Carlos Carvalho, Howard Huang, Pratibha Kumari, Ralph Mason, Fahmida Brishty, Ifrah Jaffri:
7.3 A 224Gb/s 3pJ/b 40dB Insertion Loss Transceiver in 3nm FinFET CMOS. 128-130 - Yunbo Huang, Yong Chen, Zunsong Yang, Rui Paulo Martins, Pui-In Mak:
7.4 A 0.027mm2 5.6-7.8GHz Ring-Oscillator-Based Ping-Pong Sampling PLL Scoring 220.3fsrms Jitter and -74.2dBc Reference Spur. 130-132 - Xiongshi Luo, Xuewei You, Zhenghao Li, Hamed Mosalam, Dongfan Xu, Taiyang Fan, Hongchang Qiao, Wentao Zhou, Hongzhi Wu, Liping Zhong, Patrick Yin Chiang, Quan Pan:
7.5 A 224Gb/s/wire Single-Ended PAM-4 Transceiver Front-End with 29dB Equalization for 800GbE/1.6TbE. 132-134 - Liping Zhong, Hongzhi Wu, Yangyi Zhang, Xuxu Cheng, Weitao Wu, Catherine Wang, Xiongshi Luo, Taiyang Fan, Dongfan Xu, Quan Pan:
7.6 A 112Gb/s/pin Single-Ended Crosstalk-Cancellation Transceiver with 31dB Loss Compensation in 28nm CMOS. 134-136 - Yen-Po Lin, Pen-Jui Peng, Chun-Chang Lu, Po-Ting Shen, Yun-Cheng Jao, Ping-Hsuan Hsieh:
7.7 A 2.16pJ/b 112Gb/s PAM-4 Transceiver with Time-Interleaved 2b/3b ADCs and Unbalanced Baud-Rate CDR for XSR Applications in 28nm CMOS. 136-138 - Mahmoud A. Khalil, Mohamed Badr Younis, Ruhao Xia, Ahmed E. AbdelRahman, Tianyu Wang, Kyu-Sang Park, Pavan Kumar Hanumolu:
7.8 A 69.3fs Ring-Based Sampling-PLL Achieving 6.8GHz-14GHz and -54.4dBc Spurs Under 50mV Supply Noise. 138-140 - Soumen Mohapatra, Emad Afshar, Zhiyuan Zhou, Deukhyoun Heo:
7.9 An 8b 6-12GHz 0.18mW/GHz DC Modulated Ramp-Based Phase Interpolator in 65nm CMOS Process. 140-142 - Ji Jin, Weiwei Xu, Lin Cheng:
8.1 A 94.5%-Peak-Efficiency 3.99W/mm2-Power-Density Single-Inductor Bipolar-Output Converter with a Concise PWM Control for AMOLED Displays. 144-146 - Dae-Hyeon Kim, Hyun-Sik Kim:
8.2 A 96.9%-Peak-Efficiency Bilaterally-Symmetrical Hybrid Buck-Boost Converter Featuring Seamless Single-Mode Operation, Always-Reduced Inductor Current, and the Use of All CMOS Switches. 146-148 - Junyi Ruan, Junmin Jiang, Chenzhou Ding, Kai Yuan, Ka Nang Leung, Xun Liu:
A Li-ion-Battery-Input 1-to-6V-Output Bootstrap-Free Hybrid Buck-or-Boost Converter Without RHP Zero Achieving 97.3% Peak Efficiency 6μs Recovery Time and 1.13μs/V DVS Rate. 148-150 - Shuangxing Zhao, Chenchang Zhan, Yan Lu:
8.4 A Fast-Transient 3-Fine-Level Buck-Boost Hybrid DC-DC Converter with Half-Voltage-Stress on All Switches and 98.2% Peak Efficiency. 150-152 - Xinjian Liu, Anjali Agrawal, Akiyoshi Tanaka, Benton H. Calhoun:
8.5 A 6nA Fully-Autonomous Triple-Input Hybrid-Inductor-Capacitor Multi-Output Power Management System with Multi-Rail Energy Sharing, All-Rail Cold Startup, and Adaptive Conversion Control for mm-scale Distributed Systems. 152-154 - Hyeon-Ji Choi, Chan-Ho Lee, Young-Jun Jeon, Hyeonho Park, Jeong-Hun Kim, Young-Jin Woo, Ju-Pyo Hong, Haifeng Jin, Sung-Wan Hong:
8.7 A 92.7% Peak Efficiency 12V-to-60V Input to 1.2V Output Hybrid DC-DC Converter Based on a Series-Parallel-Connected Switched Capacitor. 156-158 - Minsu Kim, Woojoong Jung, Hyunjun Park, Junho Song, Youngkook Ahn, Taekyu Nam, Yoonsoo Shin, Young-Jin Woo, Hyung-Min Lee:
8.9 A 96.5% Peak Efficiency Duty-Independent DC-DC Step-Up Converter with Low Input-Level Voltage Stress and Mode-Adaptive Inductor Current Reduction. 160-162 - Shousheng Han, Zanfeng Fang, Zhiguo Tong, Xiaoming Wu, Hanjun Jiang, Tianling Ren, Yan Lu:
8.10 A 5V-to-150V Input-Parallel Output-Series Hybrid DC-DC Boost Converter Achieving 76.4mW/mg Power Density and 80% Peak Efficiency. 162-164 - Yi-Hsiang Kao, Chieh-Sheng Hung, Hui-Hsuan Chang, Wei-Cheng Huang, Rong-Bin Guo, Hsing-Yen Tsai, Ke-Horng Chen, Kuo-Lin Zeng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
8.11 A 48V-to-5V Buck Converter with Triple EMI Suppression Circuit Meeting CISPR 25 Automotive Standards. 164-166 - Siyuan Ye, Linxiao Shen, Jihang Gao, Jie Li, Zhuoyi Chen, Xinhang Xu, Jiajia Cui, Hao Zhang, Xing Zhang, Le Ye, Ru Huang:
9.1 A 2mW 70.7dB SNDR 200MS/s Pipelined-SAR ADC with Continuous-Time SAR-Assisted Detect-and-Skip and Open-then-Close Correlated Level Shifting. 168-170 - Yong Lim, Jaehoon Lee, Jongmi Lee, Kwangmin Lim, Seunghyun Oh, Jongwoo Lee, Sung-Ung Kwak:
9.2 A 2.08mW 64.4dB SNDR 400MS/s 12b Pipelined-SAR ADC using Mismatch and PVT Variation Tolerant Dynamically Biased Ring Amplifier in 8nm. 170-172 - Xiyu He, Mingyang Gu, Hanjun Jiang, Yi Zhong, Nan Sun, Lu Jie:
9.3 A 71dB SNDR 200MHz BW Interleaved Pipe-SAR ADC with a Shared Residue Integrating Amplifier Achieving 173dB FoMs. 172-174 - Zhuoyi Chen, Linxiao Shen, Siyuan Ye, Jihang Gao, Jie Li, Jiajia Cui, Xinhang Xu, Yaohui Luan, Hao Zhang, Le Ye, Ru Huang:
9.4 A 182.3dB FoMs 50MS/s Pipelined-SAR ADC using Cascode Capacitively Degenerated Dynamic Amplifier and MSB Pre-Conversion Technique. 174-176 - Anand Subramanian, Tanmay Halder, Laxmi Vivek Tripurari, Anand Kannan:
9.5 A 118.5dBA DR 3.3mW Audio ADC with a Class-B Resistor DAC, Non-Overlap DEM and Continuous-Time Quantizer. 176-178 - Jongmi Lee, Seong-Eun Cho, Jaehoon Lee, Yong Lim, Seunghyun Oh, Jongwoo Lee, Sung-Ung Kwak:
9.6 A 6th-Order Quadrature CTDSM using Double-OTA and Quadrature NSSAR with 171.3dB FoMs in 14nm. 178-180 - Kai-Cheng Cheng, Soon-Jyh Chang, Chung-Chieh Chen, Shuo-Hong Hung:
9.7 A 94.3dB SNDR 184dB FoMs 4th-Order Noise-Shaping SAR ADC with Dynamic-Amplifier-Assisted Cascaded Integrator. 180-182 - Rares Bodnar, Henry Kennedy, Christopher P. Hurrell, Asif Ahmad, Mark Vickery, Luke Smithers, William Buckley, Monsoon Dutt, Pasquale Delizia, Derek Hummerston, Pawel Czapor:
9.8 A 9.3nV/rtHz 20b 40MS/s 94.2dB DR Signal-Chain Friendly Precision SAR Converter. 182-184 - Sewon Lee, Hyein Kang, Minjae Lee:
9.9 A 2.72fJ/conv 13b 2MS/s SAR ADC Using Dynamic Capacitive Comparator with Wide Input Common Mode. 184-186 - Michele Rossoni, Simone Mattia Dartizio, Francesco Tesolin, Giacomo Castoro, Riccardo Dell'Orto, Carlo Samori, Andrea Leonardo Lacaita, Salvatore Levantino:
10.1 An 8.75GHz Fractional-N Digital PLL with a Reverse-Concavity Variable-Slope DTC Achieving 57.3fsrms Integrated Jitter and -252.4dB FoM. 188-190 - Seheon Jang, Munjae Chae, Hangi Park, Chanwoong Hwang, Jaehyouk Choi:
10.2 A 5.5μs-Calibration-Time, Low-Jitter, and Compact-Area Fractional-N Digital PLL Using the Recursive-Least-Squares (RLS) Algorithm. 190-192 - Dingxin Xu, Zezheng Liu, Yifeng Kuai, Hongye Huang, Yuncheng Zhang, Zheng Sun, Bangan Liu, Wenqian Wang, Yuang Xiong, Junjun Qiu, Waleed Madany, Yi Zhang, Ashbir Aviat Fadila, Atsushi Shirane, Kenichi Okada:
10.3 A 7GHz Digital PLL with Cascaded Fractional Divider and Pseudo-Differential DTC Achieving -62.1dBc Fractional Spur and 143.7fs Integrated Jitter. 192-194 - Michael Peter Kennedy, Valerio Mazzaro, Stefano Tulisi, Micheál Scully, Niall McDermott, James Breslin:
10.4 A 45.5fs-Integrated-Random-Jitter and -75dBc-Integer-Boundary-Spur BiCMOS Fractional-N PLL with Suppression of Fractional, Horn, and Wandering Spurs. 194-196 - Yuhwan Shin, Junseok Lee, Juyeop Kim, Yongwoo Jo, Jaehyouk Choi:
10.5 A 76 fsrms- Jitter and -65dBc- Fractional-Spur Fractional-N Sampling PLL Using a Nonlinearity-Replication Technique. 196-198 - Francesco Tesolin, Simone Mattia Dartizio, Giacomo Castoro, Francesco Buccoleri, Michele Rossoni, Dmytro Cherniak, Carlo Samori, Andrea Leonardo Lacaita, Salvatore Levantino:
10.6 A 10GHz FMCW Modulator Achieving 680MHz/μs Chirp Slope and 150kHz rms Frequency Error Based on a Digital-PLL with a Non-Uniform Piecewise-Parabolic Digital Predistortion. 198-200 - Xuan Wang, Xujun Ma, Yupeng Fu, Yuqian Zhou, Ang Li, Shuo Yang, Xu Wu, Dongming Wang, Lianming Li, Xiaohu You:
10.7 An 11GHz 2nd-order DPD FMCW Chirp Generator with 0.051% rms Frequency Error under a 2.3GHz Chirp Bandwidth, 2.3GHz/μs Slope, and 50ns Idle Time in 65nm CMOS. 200-202 - Byeong-Taek Moon, Hyun-Chul Park, Sang-Gug Lee:
10.8 A 281GHz, -1.5dBm Output-Power CMOS Signal Source Adopting a 46fsrms Jitter D-Band Cascaded Subharmonically Injection-Locked Sub-Sampling PLL with a 274MHz Reference. 202-204 - Haoran Li, Tailong Xu, Xi Meng, Jun Yin, Rui Paulo Martins, Pui-In Mak:
10.9 A 23.2-to-26GHz Sub-Sampling PLL Achieving 48.3fsrms Jitter, -253.5dB FoMJ, and 0.55μs Locking Time Based on a Function-Reused VCO-Buffer and a Type-I FLL with Rapid Phase Alignment. 204-206 - Tony F. Wu, Huichu Liu, Huseyin Ekin Sumbul, Lita Yang, Dipti Baheti, Jeremy Coriell, William Koven, Anu Krishnan, Mohit Mittal, Matheus Trevisan Moreira, Max Waugaman, Laurent Ye, Edith Beigné:
11.2 A 3D integrated Prototype System-on-Chip for Augmented Reality Applications Using Face-to-Face Wafer Bonded 7nm Logic at <2μm Pitch with up to 40% Energy Reduction at Iso-Area Footprint. 210-212 - Pascal Alexander Hager, Bert Moons, Stefan Cosemans, Ioannis A. Papistas, Bram Rooseleer, Jeroen Van Loon, Roel Uytterhoeven, Florian Zaruba, Spyridoula Koumousi, Milos Stanisavljevic, Stefan Mach, Sebastiaan Mutsaards, Riduan Khaddam Aljameh, Gua Hao Khov, Brecht Machiels, Cristian Olar, Anastasios Psarras, Sander Geursen, Jeroen Vermeeren, Yi Lu, Abhishek Maringanti, Deepak Ameta, Leonidas Katselas, Noah Hütter, Manuel Schmuck, Swetha Sivadas, Karishma Sharma, Manuel Oliveira, Ramon Aerne, Nitish Sharma, Timir Soni, Beatrice Bussolino, Djordje Pesut, Michele Pallaro, Andrei Podlesnii, Alexios Lyrakis, Yannick Ruffiner, Martino Dazzi, Johannes Thiele, Koen Goetschalckx, Nazareno Bruschi, Jonas Doevenspeck, Bram Verhoef, Stefan Linz, Giuseppe Garcea, Jonathan Ferguson, Ioannis Koltsidas, Evangelos Eleftheriou:
11.3 Metis AIPU: A 12nm 15TOPS/W 209.6TOPS SoC for Cost- and Energy-Efficient Inference at the Edge. 212-214 - Andrew S. Cassidy, John V. Arthur, Filipp Akopyan, Alexander Andreopoulos, Rathinakumar Appuswamy, Pallab Datta, Michael V. DeBole, Steven K. Esser, Carlos Ortega Otero, Jun Sawada, Brian Taba, Arnon Amir, Deepika Bablani, Peter J. Carlson, Myron D. Flickner, Rajamohan Gandhasri, Guillaume Garreau, Megumi Ito, Jennifer L. Klamo, Jeffrey A. Kusnitz, Nathaniel J. McClatchey, Jeffrey L. McKinstry, Yutaka Y. Nakamura, Tapan K. Nayak, William P. Risk, Kai Schleupen, Ben Shaw, Jay Sivagnaname, Daniel F. Smith, Ignacio Terrizzano, Takanori Ueda, Dharmendra S. Modha:
11.4 IBM NorthPole: An Architecture for Neural Network Inference with a 12nm Chip. 214-215 - Kaisarbek Omirzakhov, Firooz Aflatouni:
12.1 Monolithically Integrated Sub-63 fJ/b 8-Channel 256Gb/s Optical Transmitter with Autonomous Wavelength Locking in 45nm CMOS SOI. 218-220 - Sherif Ghozzy, Muhamed Allam, Emir Ali Karahan, Zheng Liu, Kaushik Sengupta:
12.2 A mm-Wave/Sub-THz Synthesizer-Free Coherent Receiver with Phase Reconstruction Through Mixed-Signal Kramer-Kronig Processing. 220-222 - Kareem Rashed, Aswin Chowdary Undavalli, Shantanu Chakrabartty, Aravind Nagulu, Arun Natarajan:
12.3 A Scalable and Instantaneously Wideband 5GS/s RF Correlator Based on Charge Thresholding Achieving 8-bit ENOB and 152 TOPS/W Compute Efficiency. 222-224 - Yongling Zhang, Rongliang Luo, Ji Xiong, Siqi Liang, Miao Meng:
12.4 A 19μW 200Mb/s loT Tag Demonstrating High-Definition Video Streaming via a Digital-Switch-Based Reconfigurable 16-QAM Backscatter Communication Technique. 224-226 - Eunseok Lee, Xibi Chen, Maitreyi Ashok, Jae-Yeon Won, Anantha P. Chandrakasan, Ruonan Han:
12.5 A Packageless Anti-Tampering Tag Utilizing Unclonable Sub-THz Wave Scattering at the Chip-Item Interface. 226-228 - Kyohei Ichikawa, Tatsuki Iwata, Saya Onishi, Tomohiro Higuchi, Yuya Hirose, Naoki Sakai, Kenji Itoh, Kousuke Miyaji:
12.6 A 64.4% Efficiency 5.8GHz RF Wireless Power Transfer Receiver with GaAs E-pHEMT Rectifier and 45.2µs MPPT Time SIDITO Buck-Boost Converter Using VOC Prediction Scheme. 228-230 - Jaehyeok Yang, Hyeongjun Ko, Kyunghoon Kim, Hyunsu Park, Jihwan Park, Ji-Hyo Kang, Jin-Youp Cha, Seongjin Kim, Youngtaek Kim, Minsoo Park, Gangsik Lee, Keonho Lee, Sanghoon Lee, Gyunam Jeon, Sera Jeong, Yongsuk Joo, Jaehoon Cha, Seonwoo Hwang, Boram Kim, Sang-Yeon Byeon, Sungkwon Lee, Hyeonyeol Park, Joohwan Cho, Jonghwan Kim:
13.1 A 35.4Gb/s/pin 16Gb GDDR7 with a Low-Power Clocking Architecture and PAM3 IO Circuitry. 232-234 - IkJoon Choi, Seunghwan Hong, Kihyun Kim, Jeongsik Hwang, Seunghan Woo, Young-Sang Kim, Cheongryong Cho, Eun-Young Lee, Hun-Jae Lee, Min-Su Jung, Hee-Yun Jung, Ju-Seong Hwang, Junsub Yoon, Wonmook Lim, Hyeong-Jin Yoo, Won-Ki Lee, Jung-Kyun Oh, Dong-Su Lee, Jong-Eun Lee, Jun-Hyung Kim, Young-Kwan Kim, Su-Jin Park, Byung-Kyu Ho, Byongwook Na, Hye-In Choi, Chung-Ki Lee, Soo-Jung Lee, Hyunsung Shin, Young-Kyu Lee, Jang-Woo Ryu, Sangwoong Shin, Sungchul Park, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, SangJoon Hwang:
13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5th-Generation 10nm DRAM Process. 234-236 - Wontaeck Jung, Hyunggon Kim, Do-Bin Kim, Tae-Hyun Kim, Nam-Hee Lee, Dongjin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim, Hwiwon Kim, Gyeongwon Lee, Jisang Lee, Joonsuc Jang, Jungmin Park, Sion Kim, Su Chang Jeon, Suyong Kim, Jung-Ho Song, Min-Seok Kim, Taesung Lee, Byung-Kwan Chun, Tongsung Kim, Young Gyu Lee, Hokil Lee, Soowoong Lee, Hwaseok Lee, Dooho Cho, Sangwan Nam, Yeomyung Kim, Kunyong Yoon, Yoonjae Lee, Sunghoon Kim, Jungseok Hwang, Raehyun Song, Hyunsik Jang, Jae-Ick Son, Hongsoo Jeon, Myunghun Lee, Mookyung Lee, Kisung Kim, Eungsuk Lee, Myeong-Woo Lee, Sungkyu Jo, Chan Ho Kim, Jong Chul Park, Kyunghwa Yun, Soonock Seol, Ji-Ho Cho, Seungjae Lee, Jin-Yub Lee, Sunghoi Hur:
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate. 236-237 - Jinhyung Lee, Kyungjun Cho, Chang Kwon Lee, Yeonho Lee, Jae-Hyung Park, Su-Hyun Oh, Yucheon Ju, Chunseok Jeong, Ho Sung Cho, Jaeseung Lee, Tae-Sik Yun, Jin Hee Cho, Sangmuk Oh, Junil Moon, Young-Jun Park, Hong-Seok Choi, In-Keun Kim, Seung Min Yang, Sun-Yeol Kim, Jaemin Jang, Jinwook Kim, Seong-Hee Lee, Younghyun Jeon, Juhyung Park, Tae-Kyun Kim, Dongyoon Ka, Sanghoon Oh, Jinse Kim, Junyeol Jeon, Seonhong Kim, Kyeong Tae Kim, Taeho Kim, Hyeonjin Yang, Dongju Yang, Minseop Lee, Heewoong Song, Dongwook Jang, Junghyun Shin, Hyunsik Kim, Chang-Ki Baek, Hajun Jeong, Jongchan Yoon, Seung-Kyun Lim, Kyo Yun Lee, Young Jun Koo, Myeong-Jae Park, Joohwan Cho, Jonghwan Kim:
13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization. 238-240 - Weitao Wu, Hongzhi Wu, Liping Zhong, Xuxu Cheng, Xiongshi Luo, Dongfan Xu, Catherine Wang, Zhenghao Li, Quan Pan:
13.5 A 64Gb/s/pin PAM4 Single-Ended Transmitter with a Merged Pre-Emphasis Capacitive-Peaking Crosstalk-Cancellation Scheme for Memory Interfaces in 28nm CMOS. 240-242 - Sung-Yong Cho, Moon-Chul Choi, Jaehyeok Baek, Donggun An, Sanghoon Kim, Daewoong Lee, Seongyeal Yang, Gil-Young Kang, Juseop Park, Kyungho Lee, Hwan-Chul Jung, Gun-hee Cho, ChanYong Lee, Hye-Ran Kim, Yong-Jae Shin, Hanna Park, Sangyong Lee, Jonghyuk Kim, Bokyeon Won, Jungil Mok, Kijin Kim, Unhak Lim, Hong-Jun Jin, YoungSeok Lee, Young-Tae Kim, Heonjoo Ha, Jinchan Ahn, Wonju Sung, Yoontaek Jang, Hoyoung Song, Hyodong Ban, TaeHoon Park, Tae-Young Oh, Changsik Yoo, SangJoon Hwang:
13.6 A 16Gb 37Gb/s GDDR7 DRAM with PAM3-Optimized TRX Equalization and ZQ Calibration. 242-244 - Koichi Kawai, Yuichi Einaga, Yoko Oikawa, Yankang He, Biagio Iorio, Shigekazu Yamada, Yoshihiko Kamata, Tomoko Iwasaki, Andrea D'Alessandro, Erwin Yu, Arvind Muralidharan, Qinge Li, Henry Nguyen, Kim-Fung Chan, Michele Piccardi, Takaaki Ichikawa, Jeff Yu, Guan Wang, Kwangwon Kim, Chulbum Kim, Paolo Mangalindan, Hojung Yun, Luca Nubile, Kapil Verma, Sushanth Bhushan, Dheeraj Srinivasan, Hidehiko Kuge, Rajesh Subramanian, Jiro Kishimoto, Toru Kamijo, Padma Musunuri, Chang Siau, Ramin Ghodsi:
13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput. 244-246 - Yangho Seo, Jihee Choi, Sunki Cho, Hyunwook Han, Wonjong Kim, Gyeongha Ryu, Jungil Ahn, Younga Cho, Sungphil Choi, Seohee Lee, Wooju Lee, Chaehyuk Lee, Kiup Kim, Seongseop Lee, Sangbeom Park, Minjun Choi, Sungwoo Lee, Mino Kim, Taekyun Shin, Hyeongsoo Jeong, Hyunseung Kim, Houk Song, Yunsuk Hong, Seokju Yoon, Giwook Park, Hokeun You, Changkyu Choi, Hae-Kang Jung, Joohwan Cho, Jonghwan Kim:
13.8 A 1a-nm 1.05V 10.5Gb/s/pin 16Gb LPDDR5 Turbo DRAM with WCK Correction Strategy, a Voltage-Offset-Calibrated Receiver and Parasitic Capacitance Reduction. 246-248 - Chanheum Han, Ki-Soo Lee, Joo-Hyung Chae:
13.9 A 25.2Gb/s/pin NRZ/PAM-3 Dual-Mode Transmitter with Embedded Partial DBI Achieving a 133% I/O Bandwidth/Pin Efficiency and 19.3% DBI Efficiency. 248-250 - Kihwan Seong, Wooseuk Oh, Hyunwoo Lee, Gyeom-Je Bae, Youngseob Suh, Hyemun Lee, Juyoung Kim, Eunsu Kim, Yeongeon Kang, Gunhu Mo, Youjin Lee, Mingyeong Kim, Seongno Lee, Donguk Park, Byoung-Joo Yoo, Hyo-Gyuem Rhew, Jongshin Shin:
13.10 A 4nm 48Gb/s/wire Single-Ended NRZ Parallel Transceiver with Offset-Calibration and Equalization Schemes for Next-Generation Memory Interfaces and Chiplets. 250-252 - Monodeep Kar, Joel Silberman, Swagath Venkataramani, Viji Srinivasan, Bruce M. Fleischer, Joshua Rubin, JohnDavid Lancaster, Sae Kyu Lee, Matthew Cohen, Matthew M. Ziegler, Nianzheng Cao, Sandra Woodward, Ankur Agrawal, Ching Zhou, Prasanth Chatarasi, Thomas Gooding, Michael Guillorn, Bahman Hekmatshoartabari, Philip Jacob, Radhika Jain, Shubham Jain, Jinwook Jung, Kyu-Hyoun Kim, Siyu Koswatta, Martin Lutz, Alberto Mannari, Abey Mathew, Indira Nair, Ashish Ranjan, Zhibin Ren, Scot Rider, Thomas Roewer, David L. Satterfield, Marcel Schaal, Sanchari Sen, Gustavo Tellez, Hung Tran, Wei Wang, Vidhi Zalani, Jintao Zhang, Xin Zhang, Vinay Shah, Robert M. Senger, Arvind Kumar, Pong-Fei Lu, Leland Chang:
14.1 A Software-Assisted Peak Current Regulation Scheme to Improve Power-Limited Inference Performance in a 5nm AI SoC. 254-256 - Weiwei Shan, Kaize Zhou, Keran Li, Yuxuan Du, Zhuo Chen, Junyi Qian, Haitao Ge, Jun Yang, Xin Si:
14.2 Proactive Voltage Droop Mitigation Using Dual-Proportional-Derivative Control Based on Current and Voltage Prediction Applied to a Multicore Processor in 28nm CMOS. 256-258 - Daniel Yingling, Yimai Peng, Robert Vachon, Dipti Pal, Sagar Jariwala, Felipe G. Cabral, Jason Hu, Rajan Verma, Vamshidhar Chiranji, Anil Kumar, Santanu Sarma, Keith A. Bowman:
14.3 A 3nm Adaptive Clock Duty-Cycle Controller for Mitigating Aging-Induced Clock Duty-Cycle Distortion. 258-260 - Chien-Yu Lu, Bo-Jr Huang, Min-Chieh Chen, Ollie Tsai, Alfred Tsai, Eric Jia-Wei Fang, Yuju Cho, Harry H. Chen, Ping Kao, Ericbill Wang, Hugh Mair, Shih-Arn Hwang:
14.4 A Fully Digital Current Sensor Offering Per-Core Runtime Power for System Budgeting in a 4nm-Plus Octa-Core CPU. 260-262 - Maico Cassel dos Santos, Tianyu Jia, Joseph Zuckerman, Martin Cochet, Davide Giri, Erik Jens Loscalzo, Karthik Swaminathan, Thierry Tambe, Jeff Jun Zhang, Alper Buyuktosunoglu, Kuan-Lin Chiu, Giuseppe Di Guglielmo, Paolo Mantovani, Luca Piccolboni, Gabriele Tombesi, David Trilla, John-David Wellman, En-Yu Yang, Aporva Amarnath, Ying Jing, Bakshree Mishra, Joshua Park, Vignesh Suresh, Sarita V. Adve, Pradip Bose, David Brooks, Luca P. Carloni, Kenneth L. Shepard, Gu-Yeon Wei:
14.5 A 12nm Linux-SMP-Capable RISC-V SoC with 14 Accelerator Types, Distributed Hardware Power Management and Flexible NoC-Based Data Orchestration. 262-264 - Dongha Lee, Seki Kim, Takahiro Nomiyama, Dong-Hoon Jung, Dongsu Kim, Jongwoo Lee, Sungung Kwak:
14.6 A 10A Computational Digital LDO Achieving 263A/mm2 Current Density with Distributed Power-Gating Switches and Time-Based Fast-Transient Controller for Mobile SoC Application in 3nm GAAFET. 264-266 - Liqun Feng, Xuansheng Ji, Longhao Kuang, Qianxian Liao, Su Han, Jiahao Zhao, Woogeun Rhee, Zhihua Wang:
14.7 A 0.45V 0.72mW 2.4GHz Bias-Current-Free Fractional-N Hybrid PLL Using a Voltage-Mode Phase Interpolator in 28nm CMOS. 266-268 - Jianbiao Xiao, Xuhui Zhang, Shijian Zhu, Zhengwei Yang, Meng Du, Chunsheng Ji, Yu Long, Xiao Chen, Xiaoyu Miao, Liang Zhou, Liang Chang, Shanshan Liu, Jun Zhou:
14.8 KASP: A 96.8% 10-Keyword Accuracy and 1.68μJ/Classification Keyword Spotting and Speaker Verification Processor Using Adaptive Beamforming and Progressive Wake-Up. 268-270 - Suhwan Kim, Harish K. Krishnamurthy, Zakir Ahmed, Nachiket V. Desai, Sheldon Weng, Anne Augustine, Huong T. Do, Jingshu Yu, Phong D. Bach, Xiaosen Liu, Kaladhar Radhakrishnan, Krishnan Ravichandran, James W. Tschanz, Vivek De:
14.9 A Monolithic 10.5W/mm2600 MHz Top-Metal and C4 Planar Spiral Inductor-Based Integrated Buck Voltage Regulator on 16nm-Class CMOS. 270-272 - Yong-Jin Lee, Woojin Jang, Hong-Hyun Bae, Jeong-Hyun Cho, Hyun-Sik Kim:
14.10 34.7A/mm2 Scalable Distributed All-Digital 6×6 Dot-LDOs Featuring Freely Linkable Current-Sharing Network: A Fine-Grained On-Chip Power Delivery Solution in 28nm CMOS. 272-274 - Zhiheng Yue, Xujiang Xiang, Fengbin Tu, Yang Wang, Yiming Wang, Shaojun Wei, Yang Hu, Shouyi Yin:
15.1 A 0.795fJ/bit Physically-Unclonable Function-Protected TCAM for a Software-Defined Networking Switch. 276-278 - Daeyeon Kim, Yusung Kim, Ayush Shrivastava, Gyusung Park, Anandkumar Mahadevan Pillai, Kunal Bannore, Tri Doan, Muktadir Rahman, Gwanghyeon Baek, Clifford Ong, Xiaofei Wang, Zheng Guo, Eric Karl:
15.2 A 2048x60m4 SRAM Design in Intel 4 with an Around-the-Array Power-Delivery Scheme Using PowerVia. 278-280 - Masaru Haraguchi, Yorinobu Fujino, Yoshisato Yokoyama, Ming-Hung Chang, Yu-Hao Hsu, Hong-Chen Cheng, Koji Nii, Yih Wang, Tsung-Yung Jonathan Chang:
15.3 A 3nm FinFET 4.3GHz 21.1Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with Folded-Bitline Multi-Bank Architecture. 280-282 - Minjune Yeo, Keonhee Cho, Giseok Kim, Won Joon Jo, Jisang Oh, Sekeon Kim, Kyeongrim Baek, Sungho Park, Seung Jae Yei, Seong-Ook Jung:
15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node. 282-284 - Jooyoung Bae, Jahyun Koo, Chaeyun Shim, Bongjin Kim:
15.5 LISA: A 576×4 All-in-One Replica-Spins Continuous-Time Latch-Based Ising Computer Using Massively-Parallel Random-Number Generations and Replica Equalizations. 284-286 - Jooyoung Bae, Chaeyun Shim, Bongjin Kim:
15.6 e-Chimera: A Scalable SRAM-Based Ising Macro with Enhanced-Chimera Topology for Solving Combinatorial Optimization Problems Within Memory. 286-288 - Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang, Wei-Keng Chang, Chang-Feng Yang, Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang, Chih-Yang Chang, Wen-Ting Chu, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C. 288-290 - Tomoya Ogawa, Ken Matsubara, Yasuhiko Taito, Tomoya Saito, Masayuki Izuna, Koichi Takeda, Yoshinobu Kaneda, Takahiro Shimoi, Hidenori Mitani, Takashi Ito, Takashi Kono:
15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs. 290-292 - Ku-Feng Lin, Hiroki Noguchi, Yi-Chun Shih, Perng-Fei Yuh, Yuan-Jen Lee, Tung-Cheng Chang, Sheng-Po Huang, Yu-Fan Lin, Chun-Ying Lee, Yen-Hsiang Huang, Jui-Che Tsai, Saman Adham, Peter Noel, Ramin Yazdi, Marat Gershoig, YangJae Shin, Vineet Joshi, Ted Wong, Meng-Ru Jiang, J. J. Wu, Chun-Tai Cheng, Yu-Jen Wang, Harry Chuang, Yu-Der Chih, Yih Wang, Tsung-Yung Jonathan Chang:
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes. 292-294 - Hyunhoon Lee, Hyeokjun Kwon, Youngjoo Lee:
16.1 A 2.7-to-13.3μJ/boot/slot Flexible RNS-CKKS Processor in 28nm CMOS Technology for FHE-Based Privacy-Preserving Computing. 296-298 - Yihong Zhu, Wenping Zhu, Yi Ouyang, Junwen Sun, Min Zhu, Qi Zhao, Jinjiang Yang, Chen Chen, Qichao Tao, Guang Yang, Aoyang Zhang, Shaojun Wei, Leibo Liu:
16.2 A 28nm 69.4kOPS 4.4μJ/Op Versatile Post-Quantum Crypto-Processor Across Multiple Mathematical Problems. 298-300 - Eric Hunt-Schroeder, Parker Lin-Butler, Amit Degada, Tian Xia:
16.3 3nm Physical Unclonable Function with Multi-Mode Self-Destruction and 3.48×10-5 Bit Error Rate. 300-302 - Sudhir S. Kudva, Mahmut Ersin Sinangil, Stephen G. Tell, Nikola Nedovic, Sanquan Song, Brian Zimmer, C. Thomas Gray:
16.4 High-Density and Low-Power PUF Designs in 5nm Achieving 23× and 39× BER Reduction After Unstable Bit Detection and Masking. 302-304 - Yan He, Kaiyuan Yang:
16.5 A Synthesizable Design-Agnostic Timing Fault Injection Monitor Covering 2MHz to 1.26GHz Clocks in 65nm CMOS. 304-306 - Mao Li, Zhaoqing Wang, Sanu K. Mathew, Vivek De, Mingoo Seok:
16.6 PACTOR: A Variation-Tolerant Probing-Attack Detector for a 2.5Gb/s×4-Channel Chip-to-Chip Interface in 28nm CMOS. 306-308 - Sirish Oruganti, Meizhi Wang, Vishnuvardhan V. Iyer, Yipeng Wang, Mengtian Yang, Raghavan Kumar, Sanu K. Mathew, Jaydeep P. Kulkarni:
Power and EM Side-Channel-Attack-Resilient AES-128 Core with Round-Aligned Globally-Synchronous-Locally-Asynchronous Operation Based on Tunable Replica Circuits. 308-310 - Jieun Park, Yong Ki Lee, Bohdan Karpinskyy, Yunhyeok Choi, Jonghoon Shin, Hyo-Gyuem Rhew, Jongshin Shin:
16.8 A 60Mb/s TRNG with PVT-Variation-Tolerant Design Based on STR in 4nm. 310-312 - Wei Wang, Zhanghao Yu, Yiwei Zou, Joshua E. Woods, Prahalad Chari, Jacob T. Robinson, Kaiyuan Yang:
17.1 Omnidirectional Magnetoelectric Power Transfer for Miniaturized Biomedical Implants via Active Echo. 314-316 - Shuhao Fan, Qi Zhou, Ka-Meng Lei, Rui Paulo Martins, Pui-In Mak:
17.2 A Miniature Multi-Nuclei NMR/MRI Platform with a High-Voltage SOI ASIC Achieving a 134.4dB Image SNR with a 173×250×103μm3 Resolution. 316-318 - Rozhan Rabbani, Micah Roschelle, Surin Gweon, Rohan Kumar, Alec Vercruysse, Nam Woo Cho, Matthew H. Spitzer, Ali M. Niknejad, Vladimir Marko Stojanovic, Mekhail Anwar:
17.3 A Fully Wireless, Miniaturized, Multicolor Fluorescence Image Sensor Implant for Real-Time Monitoring in Cancer Therapy. 318-320 - Naoki Miura, Hiroaki Taguchi, Kazuyoshi Watanabe, Masaya Nohara, Tatsuyuki Makita, Masahiro Tanabe, Takahiro Wakimoto, Shohei Kumagai, Hideyuki Nosaka, Atsushi Aratake, Toshihiro Okamoto, Shun Watanabe, Jun Takeya, Takeshi Komatsu:
17.4 Environmentally-Friendly Disposable Circuit and Battery System for Reducing Impact of E-Wastes. 320-322 - Yingying Fan, Yuxuan Liu, Gerald Topalli, Roy J. Lycke, Lan Luan, Chong Xie, Taiyun Chi:
17.5 A 24V Mini-Coil Magnetic Neural Stimulator with Closed-Loop Deadtime Control and ZCS Control Achieving 99.76% Charge Recovery Efficiency. 322-324 - Dongwon Lee, Kyung-Sik Choi, Fuze Jiang, Hangxing Liu, Doohwan Jung, Ying Kong, Marco Saif, Zhikai Huang, Jing Wang, Hua Wang:
17.6 Fully Integrated CMOS Ferrofluidic Biomolecular Processing Platform with On-Chip Droplet-Based Manipulation, Multiplexing and Sensing. 324-326 - Qijun Liu, Diana Arguijo Mendoza, Alperen Yasar, Dilara Caygara, Aya Kassem, Douglas Densmore, Rabia Tugce Yazicigil:
17.7 Droplet Microfluidics Co-Designed with Real-Time CMOS Luminescence Sensing and Impedance Spectroscopy of 4nL Droplets at a 67mm/s Velocity. 326-328 - Ali Mostafa, Emmanuel Hardy, Franck Badets:
17.8 0.4V 988nW Time-Domain Audio Feature Extraction for Keyword Spotting Using Injection-Locked Oscillators. 328-330 - Fei Tan, Wei-Han Yu, Jinhai Lin, Ka-Fai Un, Rui Paulo Martins, Pui-In Mak:
17.9 A 1.8% FAR, 2ms Decision Latency, 1.73nJ/Decision Keywords Spotting (KWS) Chip Incorporating Transfer-Computing Speaker Verification, Hybrid-Domain Computing and Scalable 5T-SRAM. 330-332 - Han Hao, Andrew G. Richardson, Yixiao Ding, Lin Du, Mark G. Allen, Jan Van der Spiegel, Firooz Aflatouni:
17.10 A 0.4V, 750nW, Individually Accessible Wireless Capacitive Sensor Interface IC for a Tactile Sensing Network. 332-334 - Gerald Topalli, Yingying Fan, Matt Y. Cheung, Ashok Veeraraghavan, Mohammad Hirzallah, Taiyun Chi:
17.11 A 9mW Ultrasonic Through Transmission Transceiver for Non-Invasive Intracranial Pressure Sensing. 334-336 - Guansheng Li, Adesh Garg, Tim He, Ullas Singh, Jiawen Zhang, Lakshmi P. Rao, Chang Liu, Meisam Honarvar Nazari, Yang Liu, Yong Liu, Heng Zhang, Tamer A. Ali, Hyo-Gyuem Rhew, Jiayoon Ru, Delong Cui, Ali Nazemi, Bo Zhang, Afshin Momtaz, Jun Cao:
18.1 A 600Gb/s DP-QAM64 Coherent Optical Transceiver Frontend with 4x105GS/s 8b ADC/DAC in 16nm CMOS. 338-340 - Susnata Mondal, Junyi Qiu, Sashank Krishnamurthy, Joe Kennedy, Soumya Bose, Tolga Acikalin, Shuhei Yamada, James E. Jaussi, Mozhgan Mansuri:
18.2 A 4x64Gb/s NRZ 1.3pJ/b Co-Packaged and Fiber-Terminated 4-Ch VCSEL-Based Optical Transmitter. 340-342 - F. Ahmad, A. Mellati, A. Fernandez, A. Iyer, A. Fan, Benjamín T. Reyes, Cindra Abidin, Claudio Nani, D. Albano, Fredy Solis, Gabriele Minoia, Geoff Hatcher, Hugo S. Carrer, K. Kota, L. Wang, M. Bachu, Marco Garampazzi, M. Hassanpourghadi, N. Fan, P. Prabha, R. L. Nguyen, S. Ho, T. Dusatko, T. Wu, W. Elsharkasy, Z. Sun, S. Jantzi, L. Tse:
18.3 An 8b 160GS/s 57GHz Bandwidth Time-Interleaved DAC and Driver-Based Transmitter with Adaptive Calibration for 800Gb/s Coherent Optical Applications in 5nm. 342-344 - R. L. Nguyen, A. Mellati, A. Fernandez, A. Iyer, A. Fan, Benjamín T. Reyes, Cindra Abidin, Claudio Nani, D. Albano, F. Ahmad, Fredy Solis, Gabriele Minoia, Geoff Hatcher, M. Bachu, Marco Garampazzi, Mohsen Hassanpourghadi, N. Fan, P. Prabha, S. Fan, S. Ho, T. Dusatko, Tzu-Fan Wu, W. Elsharkasy, Z. Sun, S. Jantzi, L. Tse:
18.4 A 200GS/s 8b 20fJ/c-s Receiver with >60GHz AFE Bandwidth for 800Gb/s Optical Coherent Communications in 5nm FinFET. 344-346 - Hangil Choi, SeongHwan Cho:
19.1 A 7.5GHz Subharmonic Injection-Locked Clock Multiplier with a 62.5MHz Reference, -259.7dB FoMJ, and -56.6dBc Reference Spur. 348-350 - Zhen Lin, Yizhu Shen, Yifan Ding, Sanming Hu:
19.2 A 12.4% Efficiency, 11dBm Psat, Odd-Harmonics-Recycling, 62-to-92GHz CMOS Frequency Quadrupler Using an Amplitude-Phase Coordinating Technique. 350-352 - Ya Zhao, Chao Fan, Qiuyu Fang, Guohe Zhang, Jun Yin, Pui-In Mak, Li Geng:
19.4 A 0.07 mm2 20-to-23.8GHz 8-phase Oscillator Incorporating Magnetic + Dual-Injection Coupling Achieving 189.2dBc/Hz FoM@10 MHz and 200.7dBc/Hz FoMA in 65nm CMOS. 354-356 - Huanyu Ge, Haikun Jia, Wei Deng, Ruichang Ma, Zhihua Wang, Baoyong Chi:
19.5 A 13.7-to-41.5GHz 214.1dBc/Hz FoMT Quad-Core Quad-Mode VCO Using an Oscillation-Mode-Splitting Technique. 356-358 - Ming-En Shih, Shih-Wei Hsieh, Ping-Yuan Tsai, Ming-Hung Lin, Pei-Kuei Tsung, En-Jui Chang, Jenwei Liang, Shu-Hsin Chang, Chung-Lun Huang, You-Yu Nian, Zhe Wan, Sushil Kumar, Cheng-Xin Xue, Gajanan Jedhe, Hidehiro Fujiwara, Haruki Mori, Chih-Wei Chen, Po-Hua Huang, Chih-Feng Juan, Chung-Yi Chen, Tsung-Yao Lin, Ch Wang, Chih-Cheng Chen, Kevin Jou:
20.1 NVE: A 3nm 23.2TOPS/W 12b-Digital-CIM-Based Neural Engine for High-Resolution Visual-Quality Enhancement on Smart Devices. 360-362 - Ruiqi Guo, Lei Wang, Xiaofeng Chen, Hao Sun, Zhiheng Yue, Yubin Qin, Huiming Han, Yang Wang, Fengbin Tu, Shaojun Wei, Yang Hu, Shouyi Yin:
20.2 A 28nm 74.34TFLOPS/W BF16 Heterogenous CIM-Based Accelerator Exploiting Denoising-Similarity for Diffusion Models. 362-364 - Wen-Chin Brian Liu, Gaël Pillonnet, Patrick P. Mercier:
8.6 An Integrated Dual-side Series/Parallel Piezoelectric Resonator-based 20-to-2.2V DC-DC Converter Achieving a 310% Loss Reduction. 364-366 - Koichi Nose, Taro Fujii, Katsumi Togawa, Shunsuke Okumura, Kentaro Mikami, Daichi Hayashi, Teruhito Tanaka, Takao Toi:
20.3 A 23.9TOPS/W @ 0.8V, 130TOPS AI Accelerator with 16× Performance-Accelerable Pruning in 14nm Heterogeneous Embedded MPU for Real-Time Robot Applications. 364-366 - Yuhao Ju, Ganqi Xu, Jie Gu:
20.4 A 28nm Physics Computing Unit Supporting Emerging Physics-Informed Neural Network and Finite Element Method for Real-Time Scientific Computing on Edge Devices. 366-368 - Sangyeob Kim, Sangjin Kim, Wooyoung Jo, Soyeon Kim, Seongyon Hong, Hoi-Jun Yoo:
20.5 C-Transformer: A 2.6-18.1μJ/Token Homogeneous DNN-Transformer/Spiking-Transformer Processor with Big-Little Network and Implicit Weight Generation for Large Language Models. 368-370 - Jueun Jung, Seungbin Kim, Bokyoung Seo, Wuyoung Jang, Sangho Lee, Jeongmin Shin, Donghyeon Han, Kyuho Jason Lee:
20.6 LSPU: A Fully Integrated Real-Time LiDAR-SLAM SoC with Point-Neural-Network Segmentation and Multi-Level kNN Acceleration. 370-372 - Junha Ryu, Hankyul Kwon, Wonhoon Park, Zhiyong Li, Beomseok Kwon, Donghyeon Han, Dongseok Im, Sangyeob Kim, Hyungnam Joo, Hoi-Jun Yoo:
20.7 NeuGPU: A 18.5mJ/Iter Neural-Graphics Processing Unit for Instant-Modeling and Real-Time Rendering with Segmented-Hashing Architecture. 372-374 - Gwangtae Park, Seokchan Song, Haoyang Sang, Dongseok Im, Donghyeon Han, Sangyeob Kim, Hongseok Lee, Hoi-Jun Yoo:
20.8 Space-Mate: A 303.5mW Real-Time Sparse Mixture-of-Experts-Based NeRF-SLAM Processor for Mobile Spatial Computing. 374-376 - Huajun Zhang, Mingshuang Zhang, Mengying Chen, Arthur Admiraal, Miao Zhang, Marco Berkhout, Qinwen Fan:
21.1 A 121.7dB DR and -109.0dB THD+N Filterless Digital-Input Class-D Amplifier with an HV Multibit IDAC Using Tri-level Output and Employing a Transition-Rate-Balanced Bidirectional RTDEM Scheme. 378-380 - Kaiwen Zhou, Jianhong Zhou, Yuxiang Tang, Jiahua Li, Zhiliang Hong, Jiawei Xu:
21.2 A 0.81mA, -105.2dB THD+N Class-D Audio Amplifier with Capacitive Feedforward and PWM-Aliasing Reduction for Wide-Band-Effective Linearity Improvement. 380-382 - Huajun Zhang, Haochun Fan, Miao Zhang, Marco Berkhout, Qinwen Fan:
21.3 A -106.3dB THD+N Feedback-After-LC Class-D Audio Amplifier Employing Current Feedback to Enable 530kHz LC-Filter Cut-Off Frequency. 382-384 - Shon-Hang Wen, Chuan-Hung Hsiao, Yi-Wei Huang, Kuan-Yu Lin, You-Shin Chen, Ya-Chi Chen, Ming-Chung Tsai, Kuan-Hung Chen, Kuan-Dar Chen:
21.4 A -108dBc THD+N, 2.3mW Class-H Headphone Amplifier with Power-Aware SIMO Supply Modulator. 384-386 - Yuefeng Cao, Minglei Zhang, Yan Zhu, Rui Paulo Martins, Chi-Hang Chan:
22.1 A 12GS/s 12b 4× Time-Interleaved Pipelined ADC with Comprehensive Calibration of TI Errors and Linearized Input Buffer. 388-390 - Sharvil Patil, Asha Ganesan, Hajime Shibata, Victor Kozlov, Gerry Taylor, Qingnan Yu, Zhao Li, Zeynep Lulec, Konstantinos Vasilakopoulos, Prawal Shrestha, Donald Paterson, Raviteja Theertham, Aseer Chowdhury:
22.2 A 700MHZ-BW -164dBFS/Hz-Small-Signal-NSD 703mW Continuous-Time Pipelined ADC with On-Chip Digital Reconstruction Achieving 3 using Digital Cancellation of DAC Errors. 390-392 - Amy Whitcombe, Somnath Kundu, Hariprasad Chandrakumar, Abhishek Agrawal, Thomas William Brown, Steven Callender, Brent R. Carlton, Stefano Pellerano:
22.3 A 76mW 40GS/s 7b Time-Interleaved Hybrid Voltage/Time-Domain ADC with Common-Mode Input Tracking. 392-394 - Yunsong Tao, Mingyang Gu, Baoyong Chi, Yi Zhong, Lu Jie, Nan Sun:
22.4 A 4.8GS/s 7-ENoB Time-Interleaved SAR ADC with Dither-Based Background Timing-Skew Calibration and Bit-Distribution-Based Background Ping-Pong Comparator Offset Calibration. 394-396 - Ewout Martens, Adam Cooman, Pratap Tumkur Renukaswamy, Shun Nagata, Sehoon Park, Jorge-Luis Lagos, Nereo Markulic, Jan Craninckx:
22.5 A 42GS/s 7b 16nm Massively Time-Interleaved Slope-ADC. 396-398 - Jiaqi Shen, Fengyuan Zhu, Yang Liu, Boxiao Liu, Chunqi Shi, Leilei Huang, Long Xu, Xiaohua Tian, Runxi Zhang:
23.1 A 44μW IoT Tag Enabling 1μs Synchronization Accuracy and OFDMA Concurrent Communication with Software-Defined Modulation. 400-402 - Nicola Scolari, Franz-Xaver Pengg, Konstantinos Manetakis, Camilo A. Salazar, Alexandre Vouilloz, Ernesto Pérez Serna, Anjana Dissanayake, Pascal Persechini, Vladimir Kopta, Erwan Le Roux, Francesco Chicco, Stefano Cillo, Nicola Gerber, Cédric Barbelenet, Fabio Epifano, Paulo Augusto Dal Fabbro, Nicolas Raemy:
23.2 A 1mm2 Software-Defined Dual-Mode Bluetooth Transceiver with 10dBm Maximum TX Power and -98.2dBm Sensitivity 2.96mW RX Power at 1Mb/s. 402-404 - Ziyi Chang, Qijing Xiao, Cheng Chen, Weixiao Wang, Xin Hu, Changgui Yang, Zhuhao Li, Yuxuan Luo, Bo Zhao:
23.3 A Passive Crystal-Less Wi-Fi-to-BLE Tag Demonstrating Battery-Free FDD Communication with Smartphones. 404-406 - Haijun Shao, Rui Paulo Martins, Pui-In Mak:
23.4 A 167 μW 71.7dB-SFDR 2.4GHz BLE Receiver Using a Passive Quadrature-Front-End, a Double-Sided Double-Balanced Cascaded Mixer and a Dual-Transformer-Coupled Class-D VCO. 406-408 - Anoop Narayan Bhat, Paul Mateman, Zule Xu, Peter Vis, Paul Detterer, Gururaja Kasanadi Ramachandra, Yunus Baykal, Mario Konijnenburg, Yao-Hong Liu, Christian Bachmann, Peng Zhang:
23.5 A 7.6mW IR-UWB Receiver Achieving -13dBm Blocker Resilience with a Linear RF Front-End. 408-410 - Dawei Tang, Xiaoyue Xia, Zheng Yan, Peigen Zhou, Zekun Li, Chun Yang, Rui Zhang, Zhe Chen, Jixin Chen, Hao Gao, Wei Hong:
24.1 A 90-to-180GHz APD-Integrated Transmitter Achieving 18dBm Psat in 28nm CMOS. 411-413 - Jicong Zhang, Bingli Dai, Xiangao Meng, Yi Hu, Ming Guan, Hegang Deng, Bo Zhang, Cheng Wang:
24.2 A Scalable 134-to-141GHz 16-Element CMOS 2D λ/2-Spaced Phased Array. 414-416 - Chun Wang, Hans Herdian, Wenbin Zheng, Chenxin Liu, Jill C. Mayeda, Yuxuan Liu, Olivia Angel Yong, Wenqian Wang, Yuncheng Zhang, Carrel da Gomez, Abanob Shehata, Sena Kato, Ibrahim Abdo, Teruo Jyo, Hiroshi Hamada, Hiroyuki Takahashi, Hiroyuki Sakai, Atsushi Shirane, Kenichi Okada:
24.3 A 236-to-266GHz 4-Element Amplifier-Last Phased-Array Transmitter in 65nm CMOS. 415-417 - S. M. Hossein Naghavi, Morteza Tavakoli Taba, Amirata Tabatabavakili, Ali Mostajeran, Mohammed Aseeri, Andreia Cathelin, Ehsan Afshari:
24.4 Sub-THz Ruler: Spectral Bistability in a 235GHz Self-Injection-Locked Oscillator for Agile and Unambiguous Ranging. 418-420 - Andrew M. Netherton, Mario Dumont, Zachary Nelson, Jinesh Jhonsa, Alice Mo, Jahyun Koo, David McCarthy, Noah Pestana, Skylar Deckoff-Jones, Christopher V. Poulton, Michael Frankel, Jock Bovington, Luke Theogarajan, John E. Bowers:
25.1 Short-Reach Silicon Photonic Interconnects with Quantum Dot Mode Locked Laser Comb Sources. 422-424 - Nader Engheta:
25.2 Extreme Wave-Based Metastructures. 424-425 - Jacob T. Robinson, Joshua E. Woods, Kaiyuan Yang:
25.3 Toward Exponential Growth of Therapeutic Neurotechnology. 426-428 - Carmel Majidi:
25.4 Liquid Metal - Polymer Composites for Stretchable Circuits, Soft Machines, and Thermal Management. 428-429 - Yousung Park, Gyeong-Gu Kang, Gyu-Wan Lim, Seunghwa Shin, Yong-Sung Ahn, Wonyoun Kim, Hyun-Sik Kim:
26.1 A 600ch 10b Source-Driver IC with a Charge-Modulation DAC Achieving 1-Horizontal Time of 1.5μs Suitable for 240Hz-Frame-Rate Mobile Displays. 432-434 - Jaewoong Ahn, Seung Hun Choi, Junyeol An, Ki-Duk Kim, Hyung-Min Lee:
26.2 A Fully Nonlinear Compact 10b Source Driver with Low-Voltage Gamma Slope DAC and Data/Phase Dependent Current Modulation Achieving 2411μm2/Channel for Mobile OLED Displays. 434-436 - Junyeol An, Seung Hun Choi, Si-Woo Kim, Jae-Youl Lee, Hyung-Min Lee, Yoon-Kyung Choi:
26.3 Noise Immunity in Capacitive Sensing: Single-Ended AFE Design with Common-Current Subtraction for Mutual- and Self-Capacitance Sensing in 390pF Load. 436-438 - Junmin Lee, Juwon Ham, Hamin Lee, Wooseok Jang, Hyeongjoon Kim, Byungcheol So, Seunghoon Ko:
A 620pF-Compensated Dual-Mode Capacitance Readout IC for Sub-Display TSP with VRR Scan. 438-440 - Xiangdong Feng, Zhiyu Wang, Yekan Chen, Tianyi Cai, Yangfan Xuan, Changgui Yang, Weixiao Wang, Yunshan Zhang, Zhong Tang, Yuxuan Luo, Bo Zhao:
26.5 A 977μW Capacitive Touch Sensor with Noise-Immune Excitation Source and Direct Lock-In ADC Achieving 25.2pJ/step Energy Efficiency. 440-442 - Fangyu Mao, Rui Paulo Martins, Yan Lu:
27.1 A Differential Hybrid Class-ED Power Amplifier with 27W Maximum Power and 82% Peak E2E Efficiency for Wireless Fast Charging To-Go. 444-446 - Junfei Ge, Yu Lu, Ruoshu Yang, Dongfang Pan, Lin Cheng:
27.2 A 6.78-MHz 79.5%-Peak-Efficiency Wireless Power Transfer System using a Wireless Mode-Recognition Technique and a Fully-On/off Class-D Power Amplifier. 446-448 - Hyun-Su Lee, Kyeongho Eom, Hyung-Min Lee:
27.3 A 90.8%-Efficiency SIMO Resonant Regulating Rectifier Generating 3 Outputs in a Half Cycle with Distributed Multi-Phase Control for Wirelessly-Powered Implantable Devices. 448-450 - Tianqi Lu, Sijun Du:
27.4 A 13.56MHz Wireless Power Transfer System with Hybrid Voltage-/Current-Mode Receiver and Global Digital-PWM Regulation Achieving 150% Transfer Range Extension and 72.3% End-to-End Efficiency. 450-452 - Yutang Chen, Yuxuan Luo, Yifan Lin, Lei Shao, Dihu Chen, Jianping Guo:
27.5 A Wireless Power Transfer System with Up-to-27.9% Efficiency Improvement under Coupling Coefficient Ranging from 0.1 to 0.39 Based on Phase-Shift/Time-Constant Detection and Hybrid Transmission Power Control. 452-454 - Jun-Gi Lee, Hong-Hyun Bae, Seunghyun Jang, Hyun-Sik Kim:
28.1 A Fully Integrated, Domino-Like-Buffered Analog LDO Achieving -28dB Worst-Case Power-Supply Rejection Across the Frequency Spectrum from 10Hz to 1GHz with 50pF On-Chip Capacitance. 456-458 - Yichao Ji, Ji Jin, Lin Cheng:
A 12V-Input 1V-1.8V-Output 94.7%-Peak-Efficiency 685A/cm3-Current-Density Hybrid DC-DC Converter with a Charge Converging Phase. 458-460 - Qiaobo Ma, Yang Jiang, Huihua Li, Xiongjie Zhang, Man-Kay Law, Rui Paulo Martins, Pui-In Mak:
28.3 A 12-28V to 0.6-1.8V Ratio-Regulatable Dickson SC Converter with Dual-Mode Phase Misalignment Operations Achieving 93.1% Efficiency and 6A Output. 460-462 - Nicolas Butzen, Harish Krishnamurthy, Jingshu Yu, Khondker Zakir Ahmed, Sheldon Weng, Krishnan Ravichandran, Ramez Hosseinian Ahangharnejhad, James Waldemer, Chris Pelto, James W. Tschanz:
28.4 A Monolithic 12.7W/mm2 Pmax, 92% Peak-Efficiency CSCR-First Switched-Capacitor DC-DC Converter. 462-464 - Hyunki Han, Jeong-Hyun Cho, Woojin Jang, Yousung Park, Jiho Lee, Hyun-Sik Kim:
28.5 A 94.1%-Efficiency Parallel-SC Hybrid Buck Converter Designed Using VCR-Aware Topology Optimizer for a 4.2A/mm² Current-Density FoM. 464-466 - Rinkle Jain, Shunjiang Xu, Rajiv Kaushal, Carlos Mariscal, Humberto Caballero, Tamir Salus, Christopher Schaef, Anup Deka, Aruna Payala, Keng Chen, Huong Do, Jonathan Douglas:
28.6 An 87% Efficient 2V-Input, 200A Voltage Regulator Chiplet Enabling Vertical Power Delivery in Multi-kW Systems-on-Package. 466-468 - Luc Enthoven, Niels Fakkel, Hans Bartling, Margriet van Riggelen, Kai-Niklas Schymik, Jiwon Yun, Eftychia Tsapanou Katranara, René Vollmer, Tim Taminiau, Fabio Sebastiano, Masoud Babaie:
29.2 A Cryo-CMOS Controller with Class-DE Driver and DC Magnetic-Field Tuning for Color-Center-Based Quantum Computers. 472-474 - Bagas Prabowo, Oriol Pietx-Casas, Mohammad Ali Montazerolghaem, Giordano Scappucci, Lieven M. K. Vandersypen, Fabio Sebastiano, Masoud Babaie:
29.3 A Cryo-CMOS Receiver with 15K Noise Temperature Achieving 9.8dB SNR in 10μs Integration Time for Spin Qubit Readout. 474-476 - Yanshu Guo, Qichun Liu, Wenqiang Huang, Yaoyu Li, Tian Tian, Nan Wu, Siqi Zhang, Tiefu Li, Zhihua Wang, Ning Deng, Yuanjin Zheng, Hanjun Jiang:
29.4 A Cryo-CMOS Quantum Computing Unit Interface Chipset in 28nm Bulk CMOS with Phase-Detection Based Readout and Phase-Shifter Based Pulse Generation. 476-478 - Jui-Hung Sun, Michella Rustom, Thanh Dat Nguyen, Jaideep Singh, Peter Qin, Constantine Sideris:
29.5 A Portable 14GHz Dual-Mode Pulse and Continuous-Wave Electron Paramagnetic Resonance Spectrometer Using a Subharmonic Direct Conversion Receiver. 478-480 - Samuel D. Spetalnick, Ashwin Sanjay Lele, Brian Crafton, Muya Chang, Sigang Ryu, Jong-Hyeok Yoon, Zhijian Hao, Azadeh Ansari, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury:
30.1 A 40nm VLIW Edge Accelerator with 5MB of 0.256pJ/b RRAM and a Localization Solver for Bristle Robot Surveillance. 482-484 - Ying Liu, Yufei Ma, Ninghui Shang, Tianhao Zhao, Peiyu Chen, Meng Wu, Jiayoon Ru, Tianyu Jia, Le Ye, Zhixuan Wang, Ru Huang:
30.2 A 22nm 0.26nW/Synapse Spike-Driven Spiking Neural Network Processing Unit Using Time-Step-First Dataflow and Sparsity-Adaptive In-Memory Computing. 484-486 - Chaeyun Shim, Jooyoung Bae, Bongjin Kim:
30.3 VIP-Sat: A Boolean Satisfiability Solver Featuring 5×12 Variable In-Memory Processing Elements with 98% Solvability for 50-Variables 218-Clauses 3-SAT Problems. 486-488 - Yi-Chen Chu, Yu-Cheng Lin, Yu-Chen Lo, Chia-Hsiang Yang:
30.4 A Fully Integrated Annealing Processor for Large-Scale Autonomous Navigation Optimization. 488-490 - Alan Smith, Eric Chapman, Chintan Patel, Raja Swaminathan, John J. Wuu, Tyrone Huang, Wonjun Jung, Alexander Kaganov, Hugh McIntyre, Ramon Mangaser:
11.1 AMD InstinctTM MI300 Series Modular Chiplet Package - HPC and AI Accelerator for Exa-Class Systems. 490-492 - Jiahao Song, Zihan Wu, Xiyuan Tang, Bocheng Xu, Haoyang Luo, Youming Yang, Yuan Wang, Runsheng Wang, Ru Huang:
30.5 A Variation-Tolerant In-eDRAM Continuous-Time Ising Machine Featuring 15-Level Coefficients and Leaked Negative-Feedback Annealing. 490-492 - Yipeng Wang, Mengtian Yang, Chieh-Pu Lo, Jaydeep P. Kulkarni:
30.6 Vecim: A 289.13GOPS/W RISC-V Vector Co-Processor with Compute-in-Memory Vector Register File for Efficient High-Performance Computing. 492-494 - Changjin Chen, Ximing Li, Rui Hu, Lin Cheng:
31.1 An 83.4%-Peak-Efficiency Envelope-Tracking Supply Modulator Using a Class-G Linear Amplifier and a Single-Inductor Dual-Input-Dual-Output Converter for 200MHz Bandwidth 5G New Radio RF Applications. 496-498 - Yi-Hsiang Kao, Jie-Lin Wu, Wei-Cheng Huang, Hui-Hsuan Chang, Hsing-Yen Tsai, Rong-Bin Guo, Ke-Horng Chen, Kuo-Lin Zeng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
31.2 A Ripple-Less Buck Converter with Sub -21.94dB EVM for 5G Low Earth Orbit Application. 498-500 - Ik-Hwan Kim, Jeong-Il Seo, Young-Hwan Choo, Seungchan Park, Jae-Yeol Han, Woosik Kim, Sung-Youb Jung, Taehyuk Ko, Dongsu Kim, Jongwoo Lee, Sungung Kwak:
31.3 A 950ns 0.5-to-5.5V 5G NR RF PA Supply Modulator with Floating Capacitor Control for Symbol Power Tracking. 500-502 - Tz-Wun Wang, Sheng-Hsi Hung, Po-Jui Chiu, Chi-Yu Chen, Chang-Lin Go, Yu-Ting Huang, Xiao-Quan Wu, Ke-Horng Chen, Kuo-Lin Zeng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai:
31.4 98.7% Efficiency 1200V-to-48V LLC Converter with CC/CV Mode Charging Compliant with EVSE Level 1. 502-504 - Tingxu Hu, Mo Huang, Rui Paulo Martins, Yan Lu:
31.5 A 750mW, 37% Peak Efficiency Isolated DC-DC Converter with 54/18Mb/s Full-Duplex Communication Using a Single Pair of Transformers. 504-506 - Yuanfei Wang, Mo Huang, Rui Paulo Martins, Yan Lu:
31.6 A SIDO/DISO VCF-Step-Reconfigurable Continuously Scalable-Conversion-Ratio SC Converter Achieving 91.4%/92.6% Peak Efficiency and Almost-lossless Channel Switching. 506-508 - Chen Hu, Xinran Huang, Xun Liu, Sijun Du, Xiaosen Liu, Junmin Jiang:
31.7 A 3.6W 16V-Output 180ns-Response-Time 94%-Efficiency SC Sigma Converter with Output Impedance Compensation and Ripple Mitigation for LiDAR Driver Applications. 508-510 - Baochuang Wang, Xiaonan Wu, Lin Cheng:
31.8 A 11.7W 9mV/A-Cross-Regulation Single-Inductor Triple-Output Buck Converter Using Unordered Power-Distributive Control for a 2A Load Transient. 510-512 - Niklas Deneke, Bernhard Wicht:
31.10 A Fully integrated 500V, 6.25MHz GaN-IC for Totem-Pole PFC Off-Line Power Conversion. 514-516 - Wenyu Peng, Xinling Yue, Lukasz S. Pakula, Sijun Du:
31.11 A Capacitor-Based Bias-Flip Rectifier with Electrostatic Charge Boosting for Triboelectric Energy Harvesting Achieving Auto-MPPT at Breakdown Voltage and 14× Power Extraction Improvement. 516-518 - Xiaohan Zhang, Hao Guo, Taiyun Chi:
32.1 A 47GHz 4-way Doherty PA with 23.7dBm P1dB and 21.7% / 13.1% PAE at 6 / 12dB Back-off Supporting 2000MHz 5G NR 64-QAM OFDM. 520-522 - Hansik Oh, Seungwon Park, Jooseok Lee, Seungjae Baek, Joonho Jung, Taewan Kim, Jinhyun Kim, Woojae Lee, Jae-Hong Park, Kihyun Kim, Dong-Hyun Lee, Sangho Lee, Jeong Ho Lee, Ji Hoon Kim, Younghwan Kim, Sangyong Park, Bohee Suh, Soyoung Oh, Dongsoo Lee, Sehyug Jeon, Juho Son, Sung-Gi Yang:
32.2 A 24.25-to-29.5GHz Extremely Compact Doherty Power Amplifier with Differential-Breaking Phase Offset Achieving 23.7% PAEavg for 5G Base-Station Transceivers. 522-524 - Shohei Imai, Hideyuki Sato, Kenji Mukai, Hiroshi Okabe:
32.3 A Load-Variation-Tolerant Doherty Power Amplifier with Dual-Adaptive-Bias Scheme for 5G Handsets. 524-526 - Weiping Wu, Xun Bao, Shulan Chen, Yan Wang, Lei Zhang:
32.4 A 67.8-to-108.2GHz Power Amplifier with a Three-Coupled-Line-Based Complementary-Gain-Boosting Technique Achieving 442GHz GBW and 23.1% peak PAE. 526-528 - Bharath Cimbili, Mingquan Bao, Christian Friesicke, Rüdiger Quay:
32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul. 528-530 - Marios Neofytou, Kostas Doris, Marcello Ganzerli, Maarten Lont, Georgi I. Radulov:
32.6 A 76-to-81GHz Direct-Digital 7b 14GS/s Double-Balanced I/Q Mixing-DAC Radar-Waveform Synthesizer. 530-532 - Masoud Pashaeifar, Anil Kumar Kumaran, Leo C. N. de Vreede, Morteza S. Alavi:
32.7 A 25.2dBm PSAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor. 532-534 - Wei Zhu, Jiazhi Ying, Long Chen, Jian Zhang, Guanshen Lv, Xiangjie Yi, Zhiqiang Zhao, Zunxiang Wang, Yan Wang, Wenhua Chen, Houjun Sun:
32.8 A 27.8-to-38.7GHz Load-Modulated Balanced Power Amplifier with Scalable 7-to-1 Load-Modulated Power-Combine Network Achieving 27.2dBm Output Power and 28.8%/23.2%/16.3%/11.9% Peak/6/9/12dB Back-Off Efficiency. 534-536 - Edward Liu, Hua Wang:
32.9 An Ultra-Compact 28GHz Doherty Power Amplifier with an Asymmetrically-Coupled-Transformer Output Combiner. 536-538 - Edward Liu, David Joseph Munzer, Jeongseok Lee, Hua Wang:
32.10 A Compact Broadband VSWR-Resilient True-Power-and-Gain Sensor with Dynamic-Range Compensation for Phased-Array Applications. 538-540 - Jiahao Liu, Xiao Liu, Xu Wang, Ziyi Xie, Zirui Zhong, Jiajing Fan, Hui Qiu, Yiming Xu, Huajing Qin, Yu Long, Yuhong Zhou, Zixuan Shen, Liang Zhou, Liang Chang, Shanshan Liu, Shuisheng Lin, Chao Wang, Jun Zhou:
33.1 A High-Accuracy and Energy-Efficient Zero-Shot-Retraining Seizure-Detection Processor with Hybrid-Feature-Driven Adaptive Processing and Learning-Based Adaptive Channel Selection. 542-544 - Zhiwei Zhong, Yijie Wei, Lance Christopher Go, Jie Gu:
33.2 A Sub-1μJ/class Headset-Integrated Mind Imagery and Control SoC for VR/MR Applications with Teacher-Student CNN and General-Purpose Instruction Set Architecture. 544-546 - Mohammad Ali Shaeri, Uisub Shin, Amitabh Yadav, Riccardo Caramellino, Gregor Rainer, Mahsa Shoaran:
33.3 MiBMI: A 192/512-Channel 2.46mm² Miniaturized Brain-Machine Interface Chipset Enabling 31-Class Brain-to-Text Conversion Through Distinctive Neural Codes. 546-548 - Yuhan Hou, Yi Zhu, Xiao Wu, Yinfei Li, Timothy H. Lucas, Andrew G. Richardson, Xilin Liu:
33.4 A Multi-Loop Neuromodulation Chipset Network with Frequency-Interleaving Front-End and Explainable AI for Memory Studies in Freely Behaving Monkeys. 548-550 - Tayebeh Yousefi, Georg Zoidl, Hossein Kassiri:
33.5 Closed-Loop 100-Channel Highly-Scalable Retinal Implant with 1.02μW Analog ED-Based Adaptive-Threshold Spike Detection and Poisson-Coded Temporally Distributed Optogenetic Stimulation. 550-552 - Zhanghao Yu, Huan-Cheng Liao, Fatima T. Alrashdan, Ziyuan Wen, Yiwei Zou, Joshua E. Woods, Wei Wang, Jacob T. Robinson, Kaiyuan Yang:
33.6 A Millimetric Batteryless Biosensing and Stimulating Implant with Magnetoelectric Power Transfer and 0.9pJ/b PWM Backscatter. 551-553 - Jeonghoon Cho, You Jang Pyeon, Junyeong Yeom, Hyunjoong Kim, Sanghyeon Cho, Yonggi Kim, Taejung Kim, Jong-Hyun Kwak, Geonjun Choi, Yoonsik Lee, Heungjoo Shin, Hoon Eui Jeong, Jae Joon Kim:
33.7 An Adhesive Interposer-Based Reconfigurable Multi-Sensor Patch Interface with On-Chip Application Tunable Time-Domain Feature Extraction. 554-556 - Song-I Cheon, Haidam Choi, Gichan Yun, Sein Oh, Ji-Hoon Suh, Sohmyung Ha, Minkyu Je:
33.8 A Two-Electrode Bio-Impedance Readout IC with Complex-Domain Noise-Correlated Baseline Cancellation Supporting Sinusoidal Excitation. 556-558 - Linran Zhao, Wei Shi, Yan Gong, Xiang Liu, Wen Li, Yaoyao Jia:
33.9 A Miniature Neural Interface Implant with a 95% Charging Efficiency Optical Stimulator and an 81.9dB SNDR ΔΣM-Based Recording Frontend. 558-560 - Zhouchen Ma, Yuxiang Lin, Cheng Chen, Xiangao Qi, Yongfu Li, Kea-Tiong Tang, Fa Wang, Tianhong Zhang, Guoxing Wang, Jian Zhao:
33.10 A 2.7ps-ToF-Resolution and 12.5mW Frequency-domain NIRS Readout IC with Dynamic Light Sensing Frontend and Cross-Coupling-Free Inter-Stabilized Data Converter. 560-562 - Taeryoung Seol, Geunha Kim, Sehwan Lee, Samhwan Kim, Dongwook Kim, Jeongyoon Wie, Yeonjae Shin, Hongki Kang, Jae Eun Jang, Arup K. George, Junghyup Lee:
33.11 A Hybrid Recording System with 10kHz-BW 630mVPP 84.6dB-SNDR 173.3dB-FOMSNDR and 5kHz-BW 114dB-DR for Simultaneous ExG and Biocurrent Acquisition. 562-564 - Yang Wang, Xiaolong Yang, Yubin Qin, Zhiren Zhao, Ruiqi Guo, Zhiheng Yue, Huiming Han, Shaojun Wei, Yang Hu, Shouyi Yin:
34.1 A 28nm 83.23TFLOPS/W POSIT-Based Compute-in-Memory Macro for High-Accuracy AI Applications. 566-568 - Win-San Khwa, Ping-Chun Wu, Jui-Jen Wu, Jian-Wei Su, Ho-Yu Chen, Zhao-En Ke, Ting-Chien Chiu, Jun-Ming Hsu, Chiao-Yen Cheng, Yu-Chen Chen, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang:
34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices. 568-570 - An Guo, Xi Chen, Fangyuan Dong, Jinwu Chen, Zhihang Yuan, Xing Hu, Yuanpeng Zhang, Jingmin Zhang, Yuchen Tang, Zhican Zhang, Gang Chen, Dawei Yang, Zhaoyang Zhang, Lizheng Ren, Tianzhu Xiong, Bo Wang, Bo Liu, Weiwei Shan, Xinning Liu, Hao Cai, Guangyu Sun, Jun Yang, Xin Si:
34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs. 570-572 - Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Kinshuk Khare, Cheng-En Lee, Xiaochen Peng, Vineet Joshi, Chao-Kai Chuang, Shu-Huan Hsu, Takeshi Hashizume, Toshiaki Naganuma, Chen-Hung Tien, Yao-Yi Liu, Yen-Chien Lai, Chia-Fu Lee, Tan-Li Chou, Kerem Akarvardar, Saman Adham, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm2 and 3.78Mb/mm2 Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell. 572-574 - Kentaro Yoshioka:
34.5 A 818-4094TOPS/W Capacitor-Reconfigured CIM Macro for Unified Acceleration of CNNs and Transformers. 574-576 - Yiyang Yuan, Yiming Yang, Xinghua Wang, Xiaoran Li, Cailian Ma, Qirui Chen, Meini Tang, Xi Wei, Zhixian Hou, Jialiang Zhu, Hao Wu, Qirui Ren, Guozhong Xing, Pui-In Mak, Feng Zhang:
34.6 A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC. 576-578 - Yifan He, Shupei Fan, Xuan Li, Luchang Lei, Wenbin Jia, Chen Tang, Yaolei Li, Zongle Huang, Zhike Du, Jinshan Yue, Xueqing Li, Huazhong Yang, Hongyang Jia, Yongpan Liu:
34.7 A 28nm 2.4Mb/mm2 6.9 - 16.3TOPS/mm2 eDRAM-LUT-Based Digital-Computing-in-Memory Macro with In-Memory Encoding and Refreshing. 578-580 - Tai-Hao Wen, Hung-Hsi Hsu, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsih Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices. 580-582 - Linfang Wang, Weizeng Li, Zhidao Zhou, Hanghang Gao, Zhi Li, Wang Ye, Hongyang Hu, Jing Liu, Jinshan Yue, Jianguo Yang, Qing Luo, Chunmeng Dou, Qi Liu, Ming Liu:
34.9 A Flash-SRAM-ADC-Fused Plastic Computing-in-Memory Macro for Learning in Neural Networks in a Standard 14nm FinFET Process. 582-584
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