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found 183 matches

• 2020
• 
  Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan, Kin Leong Pey:
  Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films. IRPS 2020: 1-7
• 
  Kai Ni, Aniket Gupta, Om Prakash, Simon Thomann, Xiaobo Sharon Hu, Hussam Amrouch:
  Impact of Extrinsic Variation Sources on the Device-to-Device Variation in Ferroelectric FET. IRPS 2020: 1-5
• 
  Jian Liu, Divya Acharya, Nathaniel Peachey:
  Triggering Optimization on NAND ESD Clamp and Its ESD Protection IO Scheme for CMOS Designs. IRPS 2020: 1-6
• 
  Shin-ichiro Abe, Tatsuhiko Sato, Junya Kuroda, Seiya Manabe, Yukinobu Watanabe, Wang Liao, Kojiro Ito, Masanori Hashimoto, Masahide Harada, Kenichi Oikawa, Yasuhiro Miyake:
  Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets. IRPS 2020: 1-7
• 
  Jae-Gyung Ahn, Ping-Chin Yeh, Jonathan Chang:
  Estimation of Product Reliability using TDDB Simulation and Statistical EM Method. IRPS 2020: 1-6
• 
  Thomas Aichinger, Matthias Schmidt:
  Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs. IRPS 2020: 1-6
• 
  Bahar Ajdari, Samwel Sekwao, Ricardo Ascázubi, Adam Neale, Norbert Seifert:
  On the Correlation of Laser-induced and High-Energy Proton Beam-induced Single Event Latchup. IRPS 2020: 1-5
• 
  Ryo Akimoto, Rihito Kuroda, Akinobu Teramoto, Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa:
  Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes. IRPS 2020: 1-6
• 
  Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng:
  Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS 2020: 1-9
• 
  Ansh, Gaurav Sheoran, Jeevesh Kumar, Mayank Shrivastava:
  First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel. IRPS 2020: 1-4
• 
  Wafa Arfaoui, Germain Bossu, A. Muehlhoff, D. Lipp, R. Manuwald, T. Chen, Tanya Nigam, Mahesh Siddabathula:
  A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology. IRPS 2020: 1-5
• 
  James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis:
  Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. IRPS 2020: 1-4
• 
  Jyotika Athavale, Andrea Baldovin, Michael Paulitsch:
  Trends and Functional Safety Certification Strategies for Advanced Railway Automation Systems. IRPS 2020: 1-7
• 
  Alex Ayling, Shudong Huang, Elyse Rosenbaum:
  Sub-nanosecond Reverse Recovery Measurement for ESD Devices. IRPS 2020: 1-8
• 
  Sandeep R. Bahl, Francisco Baltazar, Yong Xie:
  A Generalized Approach to Determine the Switching Lifetime of a GaN FET. IRPS 2020: 1-6
• 
  Govind Bajpai, Aniket Gupta, Om Prakash, Girish Pahwa, Jörg Henkel, Yogesh Singh Chauhan, Hussam Amrouch:
  Impact of Radiation on Negative Capacitance FinFET. IRPS 2020: 1-5
• 
  Artsiom Balakir, Alan Yang, Elyse Rosenbaum:
  An Interpretable Predictive Model for Early Detection of Hardware Failure. IRPS 2020: 1-5
• 
  Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet, Davide Crotti, Dimitri Linten, Gouri Sankar Kar:
  Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs. IRPS 2020: 1-5
• 
  Christopher H. Bennett, T. Patrick Xiao, Ryan Dellana, Ben Feinberg, Sapan Agarwal, Matthew J. Marinella, Vineet Agrawal, Venkatraman Prabhakar, Krishnaswamy Ramkumar, Long Hinh, Swatilekha Saha, Vijay Raghavan, Ramesh Chettuvetty:
  Device-aware inference operations in SONOS nonvolatile memory arrays. IRPS 2020: 1-6
• 
  Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser:
  Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS 2020: 1-7
• 
  Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, Damien Querlioz:
  Embracing the Unreliability of Memory Devices for Neuromorphic Computing. IRPS 2020: 1-5
• 
  Tom Bonifield, Honglin Guo, Jeff West, Hisashi Shichijo, Talha Tahir:
  High Frequency TDDB of Reinforced Isolation Dielectric Systems. IRPS 2020: 1-4
• 
  Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho:
  Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. IRPS 2020: 1-8
• 
  Premachandran CS, Salvatore Cimino, Manjunatha Prabhu:
  Efficient Bidirectional protection structure for Plasma induced damage (PID) and Electrostatic discharge (ESD) for 3D IC Integration. IRPS 2020: 1-5
• 
  Chang Cai, Tianqi Liu, Jie Liu, Gengsheng Chen, Luchang Ding, Kai Zhao, Bingxu Ning, Mingjie Shen:
  Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs. IRPS 2020: 1-5
• 
  Jingchen Cao, Lyuan Xu, Shi-Jie Wen, Rita Fung, Balaji Narasimham, Lloyd W. Massengill, Bharat L. Bhuva:
  Temperature Dependence of Single-Event Transient Pulse Widths for 7-nm Bulk FinFET Technology. IRPS 2020: 1-5
• 
  Wriddhi Chakraborty, Uma Sharma, Suman Datta, Souvik Mahapatra:
  Hot Carrier Degradation in Cryo-CMOS. IRPS 2020: 1-5
• 
  Yao-Feng Chang, James A. O'Donnell, Tony Acosta, Roza Kotlyar, Albert B. Chen, Pedro A. Quintero, Nathan Strutt, Oleg Golonzka, Chris Connor, Jeff Hicks:
  eNVM RRAM reliability performance and modeling in 22FFL FinFET technology. IRPS 2020: 1-4
• 
  Adrian Vaisman Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer:
  Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS 2020: 1-6
• 
  Venkata Chaitanya Krishna Chekuri, Arvind Singh, Nael Mizanur Rahman, Edward Lee, Saibal Mukhopadhyay:
  Aging Challenges in On-chip Voltage Regulator Design. IRPS 2020: 1-8

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