UNISONIC TECHNOLOGIES CO.

, LTD
2N2955 PNP SILICON TRANSISTOR

SILICON PNP TRANSISTORS

 DESCRIPTION
The UTC 2N2955 is a silicon PNP transistor in TO-247 metal
case. It is intended for power switching circuits, series and shunt
regulators, output stages and high fidelity amplifiers.

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2N2955L-T47-T 2N2955G-T47-T TO-247 B C E Tube
Note: Pin Assignment: E: Emitter B: Base C: Case

 MARKING

www.unisonic.com.tw 1 of 3
Copyright © 2018 Unisonic Technologies Co., Ltd QW-R205-004.F
2N2955 PNP SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS ( TA=25C ,unless otherwise specified )
PARAMETERS SYMBOL RATINGS UNITS
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 7 V
Collector-Emitter Voltage VCEV 70 V
Collector Current IC 15 A
Collector Peak Current (Note) ICM 15 A
Base Current IB 7 A
Base Peak Current (Note) IBM 15 A
Total Dissipation at TA=25C PD 90 W
Max. Operating Junction Temperature TJ +200 C
Storage Temperature TSTG -65 ~ 200 C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Sustaining
VCEO(SUS) IC=200mA, IB=0V 60 V
Voltage
Collector-Emitter Sustaining
VCER(SUS) IC=0.2 A, RBE=100Ω 70 V
Voltage
Collector Cut-off Current ICEO VCE=30V,IB=0 0.7 mA
VCE=100V, VBE(OFF)=1.5V 1.0
Collector Cut-off Current ICEX VCE=100V, VBE(OFF)=1.5V, 5.0 mA
Ta=150C
Emitter Cut-off Current IEBO VBE=7V, IC=0 5.0 mA
ON CHARACTERISTICS
IC=4A,VCE=4V, 20 70
DC Current Gain (Note) hFE
IC=10A,VCE=4V 5
Collector-Emitter Saturation IC=4A, IB=400mA 1.1
VCE(SAT) V
Voltage IC=10A, IB=3.3A 3.0
Base-Emitter On Voltage VBE(ON) IC=4A, VCE=4V 1.5 V
SECOND BREAKDOWN
Second Breakdown Collector with
Is/b VCE=60V, T=1.0s, Non-repetitive 2.87 A
Base Forward Biased
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product fT IC=0.5A, VCE=10V, f=1MHz 2.5 MHz
Small-Signal Current Gain hFE IC=1A, VCE=4V, f=1kHz 15 120
Small-Signal Current Gain
fhFE IC=1A, VCE=4V, f=1kHz 10 kHz
Cut-off Frequency
Note: Pulse Test: PW≦300s, Duty Cycle≦2%.

UNISONIC TECHNOLOGIES CO., LTD 2 of 3

www.unisonic.com.tw QW-R205-004.F
2N2955 PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

UNISONIC TECHNOLOGIES CO., LTD 3 of 3

www.unisonic.com.tw QW-R205-004.F