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BF822W SMD Transistor Specs

The BF822W is a low current, high voltage transistor with a maximum collector current of 50 mA and maximum collector-base voltage of 250 V. It has a typical current gain of 50 and maximum saturation voltage of 600 mV at an collector current of 30 mA. The transistor is rated for operation from -65°C to +150°C and has a thermal resistance of 625 K/W.

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Jaricsa Bernaola
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97 views1 page

BF822W SMD Transistor Specs

The BF822W is a low current, high voltage transistor with a maximum collector current of 50 mA and maximum collector-base voltage of 250 V. It has a typical current gain of 50 and maximum saturation voltage of 600 mV at an collector current of 30 mA. The transistor is rated for operation from -65°C to +150°C and has a thermal resistance of 625 K/W.

Uploaded by

Jaricsa Bernaola
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SMD Type Transistors

Product specification

BF822W

Features
Low current (max. 50 mA)
High voltage (max. 250 V).

1 Emitter
2 Base
3 Collector

Absolute Maximum Ratings Ta = 25


Parameter Symbol Rating Unit
Collector-base voltage (open emitter) VCBO 250 V
Collector-emitter voltage (open base) VCEO 250 V
Emitter-base voltage (open collector) VEBO 5 V
Collector current IC 50 mA
Peak collector current ICM 100 mA
Peak base current IBM 50 mA
Total power dissipation * (Tamb 25 ;) Ptot 200 mW
Storage temperature Tstg -65 to +150
Junction temperature Tj 150
Operating ambient temperature Ramb -65 to +150
Thermal resistance from junction to ambient * Rth j-a 625 K/W
* Transistor mounted on an FR4 printed-circuit board.

Electrical Characteristics Ta = 25
Parameter Symbol Testconditons Min Typ Max Unit
IE = 0; VCB = 200 V 10 nA
Collector cutoff current ICBO
IE = 0; VCB = 200 V; Tj = 150 10 ìA
Emitter cutoff current IEBO IC = 0; VEB = 5 V 50 nA
DC current gain hFE IC = 25 mA; VCE = 20 V 50
Collector-emitter saturation voltage * VCEsat IC = 30 mA; IB = 5 mA 600 mV
Feedback capacitance Cre IC = 0; VCB = 30 V; f = 1 MHz 1.6 pF
Transition frequency fT IC = 10 mA; VCE = 10 V; f=100MHz 60 MHz
* Pulse test: tp 300 ìs; ä 0.02.

Marking
Marking 1W

http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1of 1

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