GT35J321

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT35J321
Fourth-generation IGBT
Unit: mm
Current Resonance Inverter Switching Applications

z Enhancement mode
z High speed: tf = 0.19 μs (typ.) (IC = 50 A)
z Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A)
z FRD included between emitter and collector
z Toshiba package name: TO-3P(N)IS

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector−emitter voltage VCES 600 V

Gate−emitter voltage VGES ±25 V
@ Tc = 100°C 18
Collector current (DC) IC A 1. GATE
@ Tc = 25°C 37 2. COLLECTOR
Collector current (pulse) ICP 100 A 3. EMITTER
DC IF 20
Diode forward current A
Pulse IFP 40 JEDEC ⎯

@ Tc = 100°C 30 JEITA ⎯
Collector power
PC W
dissipation @ Tc = 25°C 75 TOSHIBA 2-16F1A
Junction temperature Tj 150 °C Weight: 5.8 g (typ.)
Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance (IGBT) Rth (j-c) 1.67 °C/W

Thermal resistance (diode) Rth (j-c) 3.2 °C/W

Equivalent Circuit Marking

Collector

TOSHIBA

Gate GT35J321 Part No. (or abbreviation code)

Lot No.

Emitter A line indicates

lead (Pb)-free package or
lead (Pb)-free finish.

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGES VGE = ±25 V, VCE = 0 V ― ― ±500 nA

Collector cut−off current ICES VCE = 600 V, VGE = 0 V ― ― 1.0 mA
Gate-emitter cut-off voltage VGE (OFF) IC = 50 mA, VCE = 5 V 3.0 ― 6.0 V
Collector-emitter saturation voltage VCE (sat) IC = 50 A, VGE = 15 V ― 1.9 2.3 V
Input capacitance Cies VCE = 10 V, VGE = 0 V, f = 1 MHz ― 2500 ― pF
Rise time tr Resistive Load ― 0.24 ―
Turn-on time ton VCC = 300 V, IC = 50 A ― 0.33 ―
Switching time μs
Fall time tf VGG = ±15 V, RG = 39 Ω ― 0.19 0.32
Turn-off time toff (Note 1) ― 0.51 ―
Diode forward voltage VF IF = 15 A, VGE = 0 V ― ― 2.0 V
Reverse recovery time trr IF = 15 A, di / dt = −100 A / μs ― ― 0.2 μs

Note 1: Switching time measurement circuit and input/output waveforms

VGE
90%
10%
0
RG
RL

0 IC
VCC 90% 90%

VCE 10% 10%

0
td (off)
tf tr
toff ton

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IC – VCE IC – VCE
100 100
Common emitter Common emitter 10
Tc = −40°C 15 Tc = 25°C 15 9
80 80

(A)
(A)

20 10 9 20

Collector current IC
Collector current IC

60 60

8
40 40
8

20 20 VGE = 7 V

VGE = 7 V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC – VCE IC – VGE
100 100
10
Common emitter 9 Common emitter
Tc = 125°C 20 VCE = 5 V
80 80
(A)
(A)

15 8
Collector current IC
Collector current IC

60 60

40 VGE = 7 V 40
25

20 20
Tc = 125°C
−40

0 0
0 1 2 3 4 5 0 2 4 6 8 10

Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V)

VCE (sat) – Tc
4

Common emitter
Collector-emitter saturation voltage

VGE = 15 V

3 IC = 100 A
VCE (sat) (V)

70

50
2
30

10
1

0
−40 0 40 80 120 160

Case temperature Tc (°C)

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VCE, VGE – QG C – VCE

500 20 10000
Common emitter
RL = 6 Ω
VCE (V)

Tc = 25°C

VGE (V)
400 16 Cies

(pF)
1000
Collector-emitter voltage

300 12

Capacitance C
Gate-emitter voltage
VCE = 300 V

200 8
100 100
200
Common emitter Coes
100 4
VGE = 0 V
f = 1 MHz
Cres
Tc = 25°C
0 0 10
0 80 160 240 320 400 1 10 100 1000

Gate charge QG (nC) Collector-emitter voltage VCE (V)

Switching Time – RG Switching Time – IC

10 10
Common emitter Common emitter
VCC = 300 V VCC = 300 V
IC = 50 A RG = 39 Ω
VGG = ±15 V VGG = ±15 V
Tc = 25°C toff Tc = 25°C
Switching time (μs)

Switching time (μs)

1 ton 1
tr
toff

tf
ton

tf
0.1 0.1
tr

0.01 0.01
1 10 100 1000 0 10 20 30 40 50 60

Gate resistance RG (Ω) Collector current IC (A)

Safe Operating Area Reverse Bias SOA

1000 1000
*: Single non-repetitive Tj ≤ 125°C
pulse Tc = 25°C
Curves must be derated VGG = 20 V
IC max (pulsed) * 10 ms* linearly with increases in
RG = 39 Ω
(A)

temperature.
(A)

100 100

10 μs*
Collector current IC

Collector current IC

IC max 10
10
(continuous)
100 μs*

1 ms*
DC operation
1 1

0.1 0.1
1 10 100 1000 10000 1 10 100 1000 10000

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

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ICmax – Tc rth (t) – tw

50 102

Transient thermal impedance rth (t) (°C/W)

Maximum DC collector current ICmax (A)

Common emitter Tc = 25°C

VGE = 15 V
40 101
Diode stage

30 100
IGBT stage

20 10−1

10 10−2

0 10−3
25 50 75 100 125 150 10−5 10−4 10−3 10−2 10−1 100 101 102

Case temperature Tc (°C) Pulse width tw (s)

IF – V F Irr, trr – IF
50 50 500
Common emitter
Irr (A)

VGE = 0 V 30 300

(ns)
40
(A)

Peak reverse recovery current

trr
Forward current IF

Reverse recovery time

30 10 100
trr

20 5 50
25
3 Irr 30
Common emitter
10 Tc = 125°C
di/dt = −100 A/μs
−40 VGE = 0 V
Tc = 25°C
0 1 10
0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20

Forward voltage VF (V) Forward current IF (A)

Cj – V R Irr, trr – di/dt

300
f = 1 MHz Common collector
200 10 IF = 15 A
Irr (A)

Tc = 25°C
Tc = 25°C
(ns)

100 trr
Cj (pF)

8
Peak reverse recovery current
trr

50
Reverse recovery time

30
Junction capacitance

100
10
4
Irr
5

3 2

1 0 0
1 3 5 10 30 50 100 300 500 0 40 80 120 160 200

Reverse voltage VR (V) di/dt (A/μs)

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RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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