GT40G121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40G121
The 4th Generation
Unit: mm
Current Resonance Inverter Switching Applications
· Enhancement-mode
· High speed: tf = 0.30 µs (typ.) (IC = 60 A)
· Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 400 V
Gate-emitter voltage VGES ±25 V
DC IC 40
Collector current A
1 ms ICP 100
Collector power dissipation (Tc = 25°C) PC 100 W
Junction temperature Tj 150 °C
Storage temperature range Tstg -55~150 °C JEDEC TO-220AB
JEITA ―
TOSHIBA 2-10P1C
Weight: 2 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGES VGE = ±25 V, VCE = 0 ¾ ¾ ±500 nA
Collector cut-off current ICES VCE = 400 V, VGE = 0 ¾ ¾ 1.0 mA
Gate-emitter cut-off voltage VGE (OFF) IC = 60 mA, VCE = 5 V 3.0 ¾ 6.0 V
Collector-emitter saturation voltage VCE (sat) IC = 60 A, VGE = 15 V ¾ 1.8 2.5 V
Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz ¾ 3900 ¾ pF
Rise time tr ¾ 0.33 ¾
39 W
3.33 9
Turn-on time ton ¾ 0.43 ¾
Switching time ms
Fall time tf 15 V ¾ 0.30 0.40
0 200 V
Turn-off time toff -15 V ¾ 0.54 ¾
Thermal resistance Rth(j-c) ¾ ¾ ¾ 1.25 °C/W
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GT40G121
IC – VCE VCE – VGE
100 10
20 9
Common emitter
8
(V)
10 Tc = -40°C
80 15 8
(A)
VCE
IC
Collector-emitter voltage
60 6
Collector current
VGE = 7 V
40 4 80
60
30
20 2
Common emitter
Tc = 25°C IC = 10 A
0 0
0 1 2 3 4 5 0 4 8 12 16 20 24
Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V)
VCE – VGE VCE – VGE
10 10
Common emitter Common emitter
(V)
(V)
Tc = 25°C Tc = 125°C
8 8
VCE
VCE
Collector-emitter voltage
Collector-emitter voltage
6 6
80
4 80 4
60 60
30 30
2 2
IC = 10 A IC = 10 A
0 0
0 4 8 12 16 20 24 0 4 8 12 16 20 24
Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)
IC – VGE VCE (sat) – Tc
100 4
Common emitter Common emitter
VCE = 5 V
Gate-emitter saturation voltage
VGE = 15 V
80
(A)
3
VCE (sat) (V)
IC
60
Collector current
80
2
60
40
25 30
1
20 IC = 10 A
Tc = 125°C -40
0 0
0 2 4 6 8 10 -40 0 40 80 120 160
Gate-emitter voltage VGE (V) Case temperature Tc (°C)
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VCE, VGE – QG C – VCE
20 10000
Common emitter cies Common emitter
5000
VGE = 0 V
Collector-emitter voltage VCE (´25 V)
RL = 3.3 W 3000
16 f = 1 MHz
Gate-emitter voltage VGE (V)
(pF)
Tc = 25°C
Tc = 25°C
1000
C
12 500
Collector current
300
VCE = 200 V
8
100 Coes
50
4 100 150 30
Cres
10
0 1 3 10 30 100 300 1000 3000
0 40 80 120 160 200
Collector-emitter voltage VCE (V)
Gate charge QG (nC)
Switching time – RG Safe operating area
5 300
Common emitter
3 VCC = 200 V IC max (pulse)
VGG = ±15 V 100
IC max 10 ms*
IC = 60 A
50 (continuous) 100 ms*
(A)
(ms)
Tc = 25°C 1 ms*
1 30
IC
Switching time
toff ton DC
Collector current
tr operation 10 ms*
0.5 10
(pulse)
tf
0.3 5 *Single
non-repetitive
3
pulse
Tc = 25°C
Curves must be
1
0.1 derated linearly
3 5 10 30 50 100 300 with increase in
0.5 temperature.
Gate resistance RG (9) 0.3
1 3 10 30 100 300 1000
Collector-emitter voltage VCE (V)
Switching time – IC
1
toff
0.5
ton
tr
0.3
tf
(ms)
Switching time
0.1
0.05
Common emitter
0.03
VCC = 200 V
VGG = ±15 V
RG = 39 W
Tc = 25°C
0.01
0 10 20 30 40 50 60 70
Collector current IC (A)
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Reverse bias safe operating area rth (t) – tw
2
300 10
Transient thermal impedance
Tc = 25°C
1
100 10
rth (t) (°C/W)
(A)
50
0
IC
30 10
Collector current
-1
10 10
5
-2
3 Tj <
= 125°C 10
VGE = ±15 V
RG = 39 W
-3
1 10
1 3 10 30 100 300 1000 -5 -4 -3 -2 -1 0 1 2
10 10 10 10 10 10 10 10
Collector-emitter voltage VCE (V) Pulse Width tw (s)
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RESTRICTIONS ON PRODUCT USE 000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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