STC6NF30V

N-CHANNEL 30V - 0.020 Ω - 6A TSSOP8

2.5V-DRIVE STripFET™ II POWER MOSFET

TYPE VDSS RDS(on) ID

< 0.025 Ω ( @ 4.5 V )

STC6NF30V 30 V 6A
< 0.030 Ω ( @ 2.5 V )
■ TYPICAL RDS(on) = 0.020 Ω @ 4.5 V
■ TYPICAL RDS(on) = 0.025 Ω @ 2.5 V
■ ULTRA LOW THRESHOLD
GATE DRIVE (2.5 V)
■ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
■ DOUBLE DICE IN COMMON DRAIN TSSOP8
CONFIGURATION

DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" INTERNAL SCHEMATIC DIAGRAM
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance.

APPLICATIONS
■ DC MOTOR DRIVE

■ DC-DC CONVERTERS

■ BATTERY SAFETY UNIT FOR NOMADIC

EQUIPMENT
■ POWER MANAGEMENT IN

PORTABLE/DESKTOP PCs

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V
VGS Gate- source Voltage ± 12 V
ID Drain Current (continuous) at TC = 25°C 6 A
ID Drain Current (continuous) at TC = 100°C 3.8 A
IDM(•) Drain Current (pulsed) 24 A
Ptot Total Dissipation at TC = 25°C 1.5 W
(•) Pulse width limited by safe operating area.

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THERMAL DATA
Rthj-pcb Thermal Resistance Junction-PCB (**) Max 100 °C/W
Rthj-pcb Thermal Resistance Junction-PCB (*) Max 83.5 °C/W
Tj Operating Junction Temperature -55 to 150 °C
Tstg Storage temperature -55 to 150 °C

(*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec
(**) When Mounted on minimum recommended footprint

ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 30
V
Breakdown Voltage

IDSS Zero Gate Voltage VDS = Max Rating 1 µA

Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA

IGSS Gate-body Leakage VGS = ± 12 V ±100 nA

Current (VDS = 0)

ON (*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 0.6 V

RDS(on) Static Drain-source On VGS = 4.5 V ID = 3 A 0.020 0.025 Ω

Resistance VGS = 2.5 V ID = 3 A 0.025 0.030 Ω

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (*) Forward Transconductance VDS = 10 V ID = 6 A 18 S

Ciss Input Capacitance VDS = 25V f = 1 MHz, VGS = 0 800 pF

Coss Output Capacitance 180 pF
Crss Reverse Transfer 32 pF
Capacitance

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 15 V ID = 3 A 20 ns
tr Rise Time RG = 4.7 Ω VGS = 2.5 V 25 ns
(Resistive Load, Figure 1)
Qg Total Gate Charge VDD= 15V ID= 6A VGS=2.5V 6.8 9 nC
Qgs Gate-Source Charge (see test circuit, Figure 2) 2.0 nC
Qgd Gate-Drain Charge 3.4 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 15 V ID = 3 A 32 ns
tf Fall Time RG = 4.7Ω, VGS = 2.5 V 13 ns
(Resistive Load, Figure 1)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 6 A
ISDM (•) Source-drain Current (pulsed) 24 A

VSD (*) Forward On Voltage ISD = 6 A VGS = 0 1.2 V

trr Reverse Recovery Time ISD = 6 A di/dt = 100A/µs 25 ns

Qrr Reverse Recovery Charge VDD = 15 V Tj = 150°C 21 nC
IRRM Reverse Recovery Current (see test circuit, Figure 3) 1.7 A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.

Safe Operating Area. Thermal Impedance.

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Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature

Thermal resistance and max power

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Fig. 1: Switching Times Test Circuits For Resistive Fig. 2: Gate Charge test Circuit
Load

Fig. 3: Test Circuit For Diode Recovery Behaviour

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TSSOP8 MECHANICAL DATA

mm. inch.
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.05 1.20 0.041 0.047
A1 0.05 0.15 0.002 0.006
A2 0.80 1.05 0.032 0.041
b 0.19 0.30 0.008 0.012
c 0.090 0.20 0.003 0.007
D 2.90 3.10 0.114 0.122
E 6.20 6.60 0.240 0.260
E1 4.30 4.50 0.170 0.177
e 0.65 0.025
L 0.45 0.75 0.018 0.030
L1 1.00 0.039
k 0o 8o 0.192 0.208

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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