TN3050H-12WY

Datasheet

30 A, 1200 V automotive grade SCR Thyristor

A Features

G
• AEC-Q101 qualified
• High junction temperature: Tj = 150 °C
K

TAB = A
• AC off state voltage: +/- 1200 V
• Nominal on-state current: 30 ARMS
• High noise immunity: 1000 V/μs
• Max. gate triggering current: 50 mA
G

K
A
• ECOPACK2 compliant component

TO-247 uninsulated
Applications
• Automotive applications: on board and off board battery charger
• Renewable energy inverters
• Solid state relay
• 3-Phase heating or motor soft start control
• UPS (uninterruptible power supply)
• Bypass SSR / hybrid relay
• Inrush current limiter in battery charger
• AC-DC voltage controlled rectifier
• Industrial welding systems
Product status

TN3050H-12WY Description
Product summary The TN3050H-12WY is an automotive grade SCR Thyristor designed for applications
such as automotive on-board chargers, solid state AC relays and stationary battery
IT(RMS) 30 A chargers.
VDRM/VRRM 1200 V This SCR Thyristor, rated for a 30 A RMS power switching, offers superior
VDSM/VRSM
performance in peak voltage robustness up to 1400 V and surge current handling up
1400 V
to 300 A sine wave pulse. Its key features allow the design of functions such as a 42
IGT 50 mA A RMS AC switch (dual back-to-back SCRs) and a 38 A average AC-DC controlled
rectifier bridge for inrush current limitation.
Tj 150 °C
Available in through-hole TO-247 package, this power package allows a thermal
operation up to 30 A RMS with a higher case temperature of 126 °C.

DS11831 - Rev 5 - March 2020 www.st.com

For further information contact your local STMicroelectronics sales office.
 TN3050H-12WY
Characteristics

1 Characteristics

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current (180 ° conduction angle) 30 A

TC = 126 °C
IT(AV) Average on-state current (180 ° conduction angle) 19 A

tp = 8.3 ms Tj initial = 25 330

ITSM (1) Non repetitive surge peak on-state current, VR = 0 V A
tp = 10 ms °C 300

VDRM/VRRM Repetitive off-state voltage (50-60 Hz) Tj = 150 °C 1200 V

IG = 2 x IGT , tr ≤ 100 ns
dl/dt f = 50 Hz Tj = 150 °C 200 A/µs
Critical rate of rise of on-state current
IGM Peak forward gate current tp = 20 µs Tj = 150 °C 8 A

PG(AV) Average gate power dissipation Tj = 150 °C 1 W

Tstg Storage junction temperature range -40 to +150 °C

Tj Operating junction temperature -40 to +150 °C

1. ST recommend I²t value for fusing = 450 A²s for Tj = 25 °C and tP = 10 ms

Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)

Symbol Test Conditions Value Unit

Min. 10
IGT VD = 12 V, RL = 33 Ω mA
Max. 50
VGT VD = 12 V, RL = 33 Ω Max. 1.3 V

VGD VD = 2/3 x VDRM, RL = 3.3 kΩ Tj = 150 °C Min. 0.2 V

IH IT = 500 mA, gate open Max. 100 mA

IL IG = 1.2 x IGT Max. 125 mA

tgt IT = 60 A , VD = 2/3 x VDRM, IG = 100 mA, dIG/dt = 0.2 A/µs Typ. 1 µs

dV/dt VD = 2/3 x VDRM, gate open Tj = 150 °C Min. 1000 V/µs

IT = 20 A, dIT/dt = 10 A/µs, VR = 75 V,
tq Tj = 150 °C Typ. 150 µs
VD = 2/3 x VDRM, dVD/dt = 20 V/µs, tP = 100 µs

VTM ITM = 60 A, tP = 380 µs Max. 1.65 V

VTO Threshold voltage Tj = 150 °C Max. 0.88 V

RD Dynamic resistance Tj = 150 °C Max. 14 mΩ

Tj = 25 °C Max. 5 µA

IDRM/IRRM VD = VDRM, VR = VRRM Tj = 125 °C Max. 3 mA

Tj = 150 °C Max. 5 mA

IDSM/IRSM VD = VDSM, VR = VRSM Tj = 25 °C Max. 10 µA

DS11831 - Rev 5 page 2/10

 TN3050H-12WY
Characteristics

Table 3. Thermal parameters

Symbol Parameter Value Unit

Rth(j-c) Junction to case (DC, max.) 0.8

°C/W
Rth(j-a) Junction to ambient (typ.) 50

DS11831 - Rev 5 page 3/10

 TN3050H-12WY
Characteristics (curves)

1.1 Characteristics curves

Figure 1. Maximum average power dissipation versus Figure 2. Average and DC on-state current versus case
average on-state current temperature

P(W) IT(AV) (A)

30
D.C 35
α = 180 °
α = 120 ° D.C
25 α = 90 ° 30
α = 60 °
α = 120 ° α = 180 °
25 α = 90 °
20 α = 30 ° α = 60 °
α = 30 °
20
15
15
10
10

5 5
IT(AV) (A) T C (°C)

0 0
0 5 10 15 20 25 0 25 50 75 100 125 150

Figure 4. Average and D.C. on-state current versus

Figure 3. On-state characteristics (maximum values)
ambient temperature

ITM(A)
1000 IT(AV) (A)
4.0

3.5
DC
100 3.0

2.5
α = 180 °
2.0

10 1.5

At Tj max : 1.0
Vto = 0.88 V
VTM (V) Rd = 14 mΩ 0.5
Tj = 150 °C Tj = 25 °C T a (°C)
1
0.0
0.0 1.0 2.0 3.0 4.0
0 25 50 75 100 125 150

Figure 5. Relative variation of thermal impedance junction Figure 6. Surge peak on-state current versus number of
to case and junction to ambient versus pulse duration cycles

K = [Zth/Rth] ITSM(A)
1.0E+00 350
Zth(j -c)
Zth(j -a) 300
tp=10ms

One cycle
250
1.0E-01 Non repetitive,Tj initial = 25 °C
VR = 0 V
200

150
1.0E-02
100 Repetitive, TC = 126 °C

50
t P (s) Number of cycles
1.0E-03 0
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1 10 100 1000

DS11831 - Rev 5 page 4/10

 TN3050H-12WY
Characteristics (curves)

Figure 7. Non repetitive surge peak on-state current for a Figure 8. Relative variation of holding and latching
sinusoidal pulse (tp < 10 ms) current versus junction temperature (typical values)

ITSM(A) IH , IL [T j ]/ IH , IL [T j = 25 °C]
10000 2.0
dI/dt limitation: 200 A/µs Tj initial = 25 °C
VR = 0 V
1.8
ITSM IH
1.5
1000

1.3
IL

1.0
100
0.8

tP (ms) 0.5
Tj(°C)
10 0.3
0.01 0.10 1.00 10.00 -50 -25 0 25 50 75 100 125 150

Figure 9. Relative variation of gate triggering current and Figure 10. Relative variation of the static dV/dt immunity
voltage versus junction temperature versus junction temperature (typical values)

dV/dt[Tj]/dV/dt[Tj = 150 °C]

IGT,VGT [T j ] / I GT,VGT [T j = 25 °C]
2.0 7

6
IGT
VD = 0.67 x V DRM
1.5
5

4
1.0
VGT 3

2
0.5

1
Tj(°C) Tj (°C)
0.0 0
-50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150

Figure 11. Relative variation of leakage current versus junction temperature for different values of
blocking voltage

IDRM,IRRM [T j ;V DRM,VRRM] / IDRM,IRRM [150 °C; 1200 V]

1.0E+00

1.0E-01
VDRM = VRRM = 1200 V

1.0E-02

1.0E-03 VDRM = VRRM = 1000 V

1.0E-04
Tj(°C)

1.0E-05
25 50 75 100 125 150

DS11831 - Rev 5 page 5/10

 TN3050H-12WY
Package information

2 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

2.1 TO-247 package information

• Epoxy meets UL 94,V0
• Recommended torque value: 0.8 N·m
• Maximum torque value: 1 N·m

Figure 12. TO-247 package outline

0075325_9

DS11831 - Rev 5 page 6/10

 TN3050H-12WY
TO-247 package information

Table 4. TO-247 package mechanical data

Dimensions

Dim. Millimeters Inches(1)

Min. Typ. Max. Min. Typ. Max.

A 4.85 5.15 0.1909 0.2028

A1 2.20 2.60 0.0866 0.1024
b 1.0 1.40 0.0394 0.0551
b1 2.0 2.40 0.0787 0.0945
b2 3.0 3.40 0.1181 0.1339
c 0.40 0.80 0.0157 0.0315

D(2) 19.85 20.15 0.7815 0.7933

E 15.45 15.75 0.6083 0.6201

e 5.30 5.45 5.60 0.2087 0.2146 0.2205
L 14.20 14.80 0.5591 0.5827
L1 3.70 4.30 0.1457 0.1693
L2 18.50 0.7283

ØP(3) 3.55 3.65 0.1398 0.1437

ØR 4.50 5.50 0.1772 0.2165

S 5.30 5.50 5.70 0.2087 0.2165 0.2244

1. Inch dimensions given only for reference

2. Dimension D plus gate protrusion does not exceed 20.5 mm
3. Resin thickness around the mounting hole is not less than 0.9 mm

DS11831 - Rev 5 page 7/10

 TN3050H-12WY
Ordering information

3 Ordering information

Table 5. Ordering information

Order code Marking Package Weight Base qty. Delivery mode

TN3050H-12WY TN3050H12Y TO-247 4.4 g 50 Tube

DS11831 - Rev 5 page 8/10

 TN3050H-12WY

Revision history

Table 6. Document revision history

Date Revision Changes

16-Sep-2016 1 Initial release.

03-Oct-2016 2 Updated Table 3. Thermal parameters.
15-Jan-2019 3 Updated Table 5. Ordering information.
05-Aug-2019 4 Updated Section Description and Table 1. Absolute ratings (limiting values).
31-Mar-2020 5 Updated Figure 6 and Figure 7.

DS11831 - Rev 5 page 9/10

 TN3050H-12WY

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DS11831 - Rev 5 page 10/10