WPT2E33
WPT2E33
Single, PNP, -30V, -3A, Power Transistor Http//:www.willsemi.com
Descriptions
The WPT2E33 is PNP bipolar power transistor
with very low saturation voltage. This device is
suitable for use in charging circuit and other power
management. Standard Product WPT2E33 is
Pb-free. SOT-89-3L
C
4
Features 1 2 3
B C E
Pin configuration (Top view)
z Ultra low collector-to-emitter saturation voltage
z High DC current gain >100 4
z 3A continue collector current
WPT2E33
z Small package SOT-89-3L. YYWW
1 2 3
WPT2E33 = Device code
YY = Year
Applications WW = Week
Marking
z Charging circuit
Order information
z Power regulator
z Other power management in portable Device Package Shipping
equipments WPT2E33-3/TR SOT-89-3L 1000/Reel&Tape
Will Semiconductor Ltd. 1 Jun, 2011 - Rev.1.2
WPT2E33
Absolute maximum ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO -30 V
Collector-base voltage VCBO -30 V
Emitter-base voltage VEBO -6 V
a
Continues collector current -3 A
b
IC
Continues collector current -2 A
c
Pulse collector current ICM -6 A
a
Power dissipation 3.0 W
b
PD
Power dissipation 1.5 W
Junction Temperature TJ 150 °C
Lead Temperature TL 260 °C
Storage Temperature Range Tstg -55~155 °C
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width=300µs, Duty Cycle<2%
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Collector-emitter breakdown voltage BVCEO IC=-10mA, IB=0mA -30 V
Collector-base breakdown voltage BVCBO IC=-1mA, IE=0mA -30 V
Emitter-base breakdown voltage BVEBO IE=-100uA, IC=0mA -6 V
Collector cutoff current ICBO VCB=-30V -100 nA
Emitter cutoff current IEBO VEB=-5V -100 nA
c
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-200mA -0.2 -0.4 V
c
Base-emitter saturation voltage VBE(sat) IC=-2A, IB=-200mA -1.0 -1.5 V
Base-emitter forward voltage VBE(on) IC=-0.5A, VCE=-2V -0.7 -1.0 V
c
DC current gain hFE IC=-1A , VCE=-2V 100 300
Will Semiconductor Ltd. 2 Jun, 2011 - Rev.1.2
WPT2E33
o
Typical Characteristics (Ta=25 C, unless otherwise noted)
5.0 10
-50mA VCE=-2V
4.5
4.0 -40mA
O
1 Ta=85 C
IC-Collector Current(A)
IC-Collector Current(A)
3.5 -30mA
3.0
O
-20mA Ta=25 C
2.5 0.1
2.0
-10mA
1.5
O
0.01 Ta=-45 C
1.0
-5mA
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VCE-Collector to Emitter Voltage(V) VBE-Base to Emitter Voltage(V)
Output characteristics Transfer characteristics
5000
VCE(sat)-Collector Saturation Voltage(V)
1000
O
hFE-DC Current Gain
Ta=85 C
O
Ta=25 C
O Ta=85 C
500
100
O
Ta=25 C
O
Ta=-45 C
O
50 Ta=-45 C
10
5 1
1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 1 10
IC-Collector Current(A) IC-Collector Current(A)
DC current gain C-E saturation voltage vs. Collector current
10
100 100ms
COLLECTOR CURRENT: IC (A)
% of Rated Power or IPP
1ms
80 10ms
1.0
100ms
60
1s
40
0.1
DC
20
SINGLE PULSE Ta = 25°C
0 0.01
0 25 50 75 100O 125 150 0.1 1.0 10 100
Ambient Temperature( C) COLLECTOR TO EMITTER VOLTAGE: VCE (V)
Power Derating Safe operating area
2
1
Duty = 0.5
Normalized Transient Thermal
Impedance ZthJA
0.2
0.1
PCM
0.1
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. R thJA = 42°C/W
Single Pulse 3. T JM - TA = PCM x ZthJA x RthJA
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 3 Jun, 2011 - Rev.1.2
WPT2E33
Package outline dimensions
SOT-89-3L
Dimensions in Millimeters
Symbol
Min. Max.
A 1.400 1.600
b 0.320 0.520
b1 0.400 0.580
c 0.350 0.440
D 4.400 4.600
D1 1.550 Ref.
E 2.300 2.600
E1 3.940 4.250
e 1.500 Typ.
e1 3.000 Typ.
L 0.900 1.200
Will Semiconductor Ltd. 4 Jun, 2011 - Rev.1.2
