RDN150N20

Transistors

Switching (200V, 15A)

RDN150N20

!Features !External dimensions (Unit : mm)

1) Low on-resistance.
TO-220FN
2) Low input capacitance. 10.0 +0.3
−0.1
4.5 +0.3
−0.1
+0.2
3.2±0.2 2.8 −0.1
3) Exellent resistance to damage from static electricity.

15.0 +0.4
−0.2

12.0±0.2

5.0±0.2 8.0±0.2
!Application
Switching 1.2
1.3

14.0±0.5
0.8

(1) Gate +0.1

!Structure (2) Drain
2.54±0.5
(1) (2) (3)
2.54±0.5 0.75 −0.05 2.6±0.5

Silicon N-channel (3) Source

MOS FET

!Absolute maximum ratings (Ta=25°C) !Equivalent circuit

Parameter Symbol Limits Unit
Drain
Drain-Source Voltage VDSS 200 V
Gate-Source Voltage VGSS ±30 V
Continuous ID 15 A
Drain Current
Pulsed IDP ∗1 45 A
Reverse Drain Continuous IDR 15 A
Gate
Current Pulsed IDRP ∗1 45 A
Avalanche Current IAS ∗2 15 A
Avalanche Energy EAS ∗2 210 mJ
∗Gate
Total Power Dissipation (TC=25°C) PD 40 W Protection
Channel Temperature Tch 150 °C Diode Source
Storage Temperature Tstg −55 to +150 °C
∗A protection diode is included between the gate and
∗1 Pw ≤ 10µs, Duty cycle ≤ 1% the source terminals to protect the diode against static
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.

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 RDN150N20
Transistors

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Gate-Source Leakage IGSS   ±10 µA VGS=±30V, VDS=0V

Drain-Source Breakdown Voltage V(BR) DSS 200   V ID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS   25 µA VDS=200V, VGS=0V
Gate Threshold Voltage VGS (th) 2.0  4.0 V VDS=10V, ID=1mA
Static Drain-Source On-State
RDS (on)  0.12 0.16 Ω ID=7.5A, VGS=10V
Resistance

Forward Transfer Admittance Yfs 4.0 6.6  S VDS=10V, ID=7.5A

Input Capacitance Ciss  1224  pF VDS=10V
Output Capacitance Coss  443  pF VGS=0V
Reverse Transfer Capacitance Crss  154  pF f=1MHz
Turn-On Delay Time td (on)  17  ns ID=7.5A, VDD 100V
Rise Time tr  37  ns VGS=10V
Turn-Off Delay Time td (off)  62  ns RL=13Ω
Fall Time tf  31  ns RGS=10Ω
Reverse Recovery Time trr  158  ns IDR=15A, VGS=0V
Reverse Recovery Charge Qrr  0.79  µC di / dt=100A / µs
Total Gate Charge Qg  32  nC VDD=100V,VGS=10V,ID=15A

!Electrical characteristic curves

100 20 100
TC=25°C 10V 7V Ta=25°C VDS=10V
Single Pulse 18 Pulsed Pulsed
8V 6V
16
DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

10

DRAIN CURRENT : ID (A)

0µ

10
s

14 Ta=125°C
1m

10 Ta=75°C
S
Pw

12 Ta=25°C
Operation in this
=1

Ta= −25°C
0m

area is limited D 10 1
S

by Ros(on) C
O
pe 8
ra 5V
1 tio
n 6
0.1
4
2 VGS=4V

0.1 0 0.01
1 10 100 1000 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V)

Fig.1 Maximun Safe Fig.2 Typical Output Characteristics Fig.3 Typical Transfer
Operating Area Characteristics

1 0.5
GATE THRESHOLD VOLTAGE : VGS (th) (V)

6.4
ON-STATE RESISTANCE : RDS (on) (Ω)

VDS=10V VGS=10V Ta=25°C

ON-STATE RESISTANCE : RDS (on) (Ω)

5.6 ID=1mA Pulsed Pulsed

0.4
4.8
STATIC DRAIN-SOURCE

4
STATIC DRAIN-SOURCE

0.3
3.2 0.1

2.4 0.2
Ta= −25°C ID=15A
1.6 Ta=25°C
Ta=75°C 0.1 7.5A
0.8 Ta=125°C

0 0.01 0
−50 −25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 0 5 10 15 20 25 30
CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Gate Threshold Voltage Fig.5 Static Drain-Source Fig.6 Static Drain-Source
vs. Channel Temperature On-State Resistance On-State Resistance vs.
vs. Drain Current Gate-Source Voltage

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 RDN150N20
Transistors

0.35 50 100
VGS=10V VDS=10V VGS=0V
ON-STATE RESISTANCE : RDS (on) (Ω)

REVERSE DRAIN CURRENT : IDR (A)

Pulsed Pulsed Pulsed
0.3 20
Ta= −25°C

ADMITTANCE :Yfs(S)
FORWARD TRANSFER
10 10
0.25 Ta=25°C
5 Ta=75°C
STATIC DRAIN-SOURCE

Ta=125°C
0.2
1 Ta= −25°C
ID=15A Ta=25°C
0.15 Ta=75°C
7.5A 1 Ta=125°C
0.1 0.5
0.1

0.05
0.2
0 0.1 0.01
−50 −25 0 25 50 75 100 125 150 0.05 0.1 0.2 0.5 1 2 5 10 20 50 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5

CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.7 Static Drain-Source Fig.8 Forward Transfer Admittance Fig.9 Reverse Drain Current vs.
On-State Resistance vs. vs. Drain Current Source-Drain Voltage
Channel Temperature

10000 200 20 1000

f=1MHz Ta=25°C Ta=25°C

REVERSE RECOVERY TIME : trr (ns)

GATE-SOURCE VOLTAGE : VGS (V)
DRAIN-SOURCE VOLTAGE : IDS (V)

VGS=0V 180 ID=15A di / dt=100A / µs

Ta=25°C VDS Pulsed VGS=0V
Pulsed 160 Pulsed
CAPACITANCE : C (pF)

Ciss(pF) 140
1000
VDD=40V VGS
120 VDD=100V
VDD=160V
100 10 100

Coss(pF) 80
100
60
VDD=40V
Ciss(pF) 40 VDD=100V
VDD=160V
20
10 0 0 10
0.1 1 10 100 1000 0 5 10 15 20 0.1 1 10 100
DRAIN SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) REVERSE DRAIN CURRENT : IDR (A)

Fig.10 Typical Capacitance vs. Fig.11 Dynamic Input Characteristics Fig.12 Reverse Recovery Time
Drain-Source Voltage vs. Reverse Drain Current

1000 10
Ta=25°C
VDD=100V
THERMAL RESISTANCE : r (t)

tr VGS=10V
RQ=10Ω
SWITCHING TIME : t (ns)

NORMALIZED TRANSIENT

Pulsed 1 D=1
0.5

td (off) 0.2
0.1
100 0.1
0.05
0.02 Tc=25°C
θth(ch-c)(t)=r(t) • =θth(ch-c)
0.01 0.01 θth(ch-c)=3.13°C / W
tr
Single pulse
td (on) PW D= PW
T
T
10 0.001
0.1 1 10 100 10µ 100µ 1m 10m 100m 1 10

DRAIN CURRENT : ID (A) PULSE WIDTH : PW (S)

Fig.13 Switching Characteristcs Fig.14 Normalized Transient

Thermal Resistance vs.
Pulse Width

3/3
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0