SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.

,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4803A
P-Channel Enhancement Mode Power MOSFET

SOP-8
Description
The 4803A uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
Equivalen t Cir cu it

General Features D1 D2

VDS = -30V,ID = - 6.0A

RDS(ON) < 39mΩ @ VGS= -10V
G1 G2
RDS(ON) < 55mΩ @ VGS= -4.5V
S1 S2

MARKING
● High power and current handing capability

● Lead free product is acquired

● Surface mount package

4803A
TFCYWP
o

Y :year code W :week code

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain
TA=25°C ID -6
Current A A
Pulsed Drain Current B IDM -20
TA=25°C 2
A PD W
Power Dissipation TA=70°C 1.4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 35 40 °C/W

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SOP-8 Plastic-Encapsulate MOSFETS

4803A
Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V

IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V -100 nA

IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA

VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.1 -1.4 -2.1 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 A

VGS=-10V, ID=-5.0A 33 39 mΩ
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4.0A 46 55 mΩ
gFS Forward Transconductance VDS=-5V, ID=-5A 6 8.6 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.8 -1 V
IS Maximum Body-Diode Continuous Current - 2.3A

DYNAMIC PARAMETERS
Ciss Input Capacitance 700 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 120 pF
Crss Reverse Transfer Capacitance 75 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 10 Ω

SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V) 14.7 nC
Qg (4.5V) Total Gate Charge (4.5V) 7.6 nC
VGS=-10V, VDS=-15V, ID=-5A
Qgs Gate Source Charge 2 nC
Qgd Gate Drain Charge 3.8 nC
tD(on) Turn-On DelayTime 8.3 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3Ω, 5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 29 ns
tf Turn-Off Fall Time 14 ns
trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 23.5 ns
Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 13.4 nC

2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.

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SOP-8 Plastic-Encapsulate MOSFETS

4803A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 10
-10V -5V
-6V
-4.5V 8 VDS=-5V
15
-4V
6
-ID (A)

-ID(A)
10
-3.5V
4 125°C

5 VGS=-3V
2
25°C
-2.5V
0 0
0.00 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

100 1.60E+00
VGS=-4.5V
Normalized On-Resistance

80 1.40E+00 VGS=-10V
VGS=-4.5V
RDS(ON) (mΩ)

60 1.20E+00
VGS=-10V

40 1.00E+00 ID=-5A

20 8.00E-01
1 3 5 7 9 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

160 1E+01

140 ID=-5A 1E+00

120 1E-01 125°C

RDS(ON) (mΩ)

100 1E-02
-IS (A)

80 125°C 1E-03
25°C

60 1E-04

40 25°C 1E-05

20 1E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4803A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=-15V
ID=-5A 1000
8 Ciss

Capacitance (pF)
800
-VGS (Volts)

6
600
4
400
Coss
2
200
Crss
0 0
0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 TJ(Max)=150°C 40
TA=25°C TJ(Max)=150°C
10µs TA=25°C
RDS(ON) 30
10 100µs
limited
-ID (Amps)

Power (W)

1ms
20
0.1s 10ms
1
1s 10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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SOP-8 Plastic-Encapsulate MOSFETS

4803A

SOP-8 Package Information

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 1.350 1.750 0.053 0.069
A1 0.100 0.250 0.004 0.010
A2 1.350 1.550 0.053 0.061
b 0.330 0.510 0.013 0.020
c 0.170 0.250 0.006 0.010
D 4.700 5.100 0.185 0.200
E 3.800 4.000 0.150 0.157
E1 5.800 6.200 0.228 0.244
e 1.270(BSC) 0.050(BSC)
L 0.400 1.270 0.016 0.050

θ 0° 8° 0° 8°

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