Triacs for Industrial Control
Triacs for Industrial Control
Triacs
Rev. 02 — 12 September 2002 Product data
1. Product profile
1.1 Description
Passivated triacs in conventional and surface mounting packages. Intended for use in
applications requiring high bidirectional transient and blocking voltage capability.
Available in a range of gate current sensitivities for optimum performance.
Product availability:
1.2 Features
■ Blocking voltage to 800 V (NA and NN ■ 1 A on-state RMS current.
types)
1.3 Applications
■ Home appliances ■ Small motor control
■ Fan controllers ■ Small loads in industrial process
control.
2. Pinning information
Table 1: Pinning - SOT54B (TO-92), SOT223, simplified outline and symbol
Pin Description Simplified outline Symbol
1 terminal 2 (T2) SOT54B
(TO-92) 4
2 gate (G)
3 terminal 1 (T1) T2
1
2
1 terminal 1 (T1) SOT223 3
2 terminal 2 (T2) G
MSB033
3 gate (G) T1 MBL300
1 2 3
4 terminal 2 (T2) Top view MSB002 - 1
3. Ordering information
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage 25 °C ≤ Tj ≤ 125 °C
Z0103/07/09MA; Z0103/07/09MN - 600 V
Z0103/07/09NA; Z0103/07/09NN - 800 V
VRRM repetitive peak reverse voltage 25 °C ≤ Tj ≤ 125 °C
Z0103/07/09MA; Z0103/07/09MN - 600 V
Z0103/07/09NA; Z0103/07/09NN - 800 V
ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge;
Figure 2 and Figure 3
t = 20 ms - 8 A
t = 16.7 ms - 8.5 A
IT(RMS) RMS on-state current all conduction angles; Figure 4
SOT223 Tsp = 90 °C - 1 A
SOT54B (TO-92) Tlead = 50 °C - 1 A
I2t I2t for fusing t = 10 ms - 0.35 A2s
dIT/dt rate of rise of on-state current ITM = 1.0 A; IG = 2 x IGT; dIG/dt = 100 mA/µs - 20 A/µs
IGM peak gate current tp = 20 µs - 1.0 A
PGM peak gate power - 2.0 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature −40 +150 °C
Tj junction temperature −40 +125 °C
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
003aaa199 003aaa200
1.6 10
ITSM
Ptot α=
(A)
(W) α 180°
8
1.2 α
120°
90° 6
0.8 60°
30° 4
0.4
2
0 0
0 0.4 0.8 1.2 1 10 102 103
IT(RMS) (A) n
003aaa207
102 003aaa201
1.2
ITSM
δIT/δt limit IT(RMS)
(A)
(A)
10
0.8
SOT54B SOT223
(Tlead) (Tsp)
1
0.4
10-1
0
10-5 10-4 10-3 10-2 0 50 100 150
ts (s)
Tlead, Tsp (°C)
Fig 3. Maximum permissible non-repetitive peak Fig 4. Maximum permissible RMS on-state current as
on-state current as a function of surge duration a function of lead temperature and solder point
for sinusoidal currents; typical values. temperature; typical values.
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to solder Figure 5 - - 25 K/W
point for SOT223
Rth(j-lead) thermal resistance from junction to lead for Figure 5 - - 60 K/W
SOT54B (TO-92)
Rth(j-a) thermal resistance from junction to ambient
SOT223 minimum footprint; mounted on a PCB - 60 - K/W
SOT54B (TO-92) vertical in free air - 150 - K/W
003aaa206
10
SOT223
10-1
SOT54B
10-2
10-3
10-4
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)
Z th ( j – lead )
a = --------------------------- for SOT54B (TO-92)
R th ( j – lead )
Z th ( j – sp )
a = ----------------------
- for SOT223
R th ( j – sp )
Fig 5. Transient thermal impedance from junction to lead and junction to solder point as a function of pulse
duration.
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; RL = 30 Ω; T2+ G+; T2+ G−; T2− G−;
Z0103MA/MN/NA/NN Figure 9 - - 3 mA
Z0107MA/MN/NA/NN - - 5 mA
Z0109MA/MN/NA/NN - - 10 mA
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2− G+; Figure 9 - - 5 mA
Z0107MA/MN/NA/NN - - 7 mA
Z0109MA/MN/NA/NN - - 10 mA
IL latching current VD = 12 V; RL = 30 Ω; T2+ G+; T2− G−; T2− G+;
Z0103MA/MN/NA/NN Figure 7 - - 7 mA
Z0107MA/MN/NA/NN - - 10 mA
Z0109MA/MN/NA/NN - - 15 mA
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2+ G−; Figure 7 - - 15 mA
Z0107MA/MN/NA/NN - - 20 mA
Z0109MA/MN/NA/NN - - 25 mA
IH holding current IT = 50 mA; Figure 8
Z0103MA/MN/NA/NN - - 7 mA
Z0107MA/MN/NA/NN - - 10 mA
Z0109MA/MN/NA/NN - - 10 mA
VT on-state voltage Figure 6 - 1.3 1.6 V
VGT gate trigger voltage VD = 12 V; RL = 30 Ω; Tj = 25 °C; Figure 11 - - 1.3 V
VD = VDRM; RL = 3.3 kΩ; Tj = 125 °C; Figure 11 0.2 - - V
ID off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 °C - - 500 µA
Dynamic characteristics
dVD/dt critical rate of rise of VD = 0.67 VDRM(max); Tj = 110 °C; exponential
off-state voltage waveform; gate open; Figure 10
Z0103MA/MN/NA/NN 10 - - V/µs
Z0107MA/MN/NA/NN 20 - - V/µs
Z0109MA/MN/NA/NN 50 - - V/µs
dVcom/dt critical rate of change of VD = 400 V; IT = 1 A; Tj = 110 °C;
commutating voltage dIcom/dt = 0.44 A/ms; gate open
Z0103MA/MN/NA/NN 0.5 - - V/µs
Z0107MA/MN/NA/NN 1 - - V/µs
Z0109MA/MN/NA/NN 2 - - V/µs
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
003aaa202 003aaa203
8 3
IT
(A) 125 °C a
typ
6
2
4
125 °C
max
25 °C 1
2 max
0 0
0 1 2 3 -50 0 50 100 150
VT (V) Tj (°C)
IL
a = ------------------
-
I °
L ( 25 C )
Fig 6. On-state current as a function of on-state Fig 7. Normalized latching current as a function of
voltage; typical and maximum values. junction temperature; typical values.
003aaa204 003aaa205
3 4
T2+ G+
a a T2+ G-
T2- G+
3 T2- G-
1
1
0
0
-50 0 50 100 150 -50 0 50 100 150
Tj (°C)
Tj (°C)
IH I GT
a = -------------------
- a = ----------------------
-
I °
I °
H ( 25 C ) GT ( 25 C )
Fig 8. Normalized holding current as a function of Fig 9. Normalized gate trigger current as a function of
junction temperature; typical values. junction temperature; typical values.
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
003aaa208 003aaa209
1.6 1.6
a
a
1.2 1.2
0.8 0.8
0.4 0.4
0 0
0 50 100 150 -50 0 50 100 150
Tj (°C) Tj (°C)
dV D ⁄ dt V GT
a = ----------------------------------
- a = ------------------------
-
dV D ( 25°C ) ⁄ dt V °
GT ( 25 C )
Fig 10. Normalized critical rate of rise of off-state Fig 11. Normalized gate trigger voltage as a function of
voltage as a function of junction temperature; junction temperature; typical values.
typical values.
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7. Package outline
Plastic single-ended leaded (through hole) package; 3 leads SOT54B
d A L
1
e1
2
D e
b1
L1
0 2.5 5 mm
scale
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
D B E A X
y
HE v M A
b1
A1
1 2 3 Lp
e1 bp w M B detail X
0 2 4 mm
scale
UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y
1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95
mm 4.6 2.3 0.2 0.1 0.1
1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85
97-02-28
SOT223 SC-73
99-09-13
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8. Revision history
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +31 40 27 24825
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
3.1 Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
5.1 Transient thermal impedance . . . . . . . . . . . . . . 4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11