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KTC3198 Kec

This document provides technical data for an epitaxial planar NPN transistor. It lists maximum ratings, electrical characteristics, and notes that the transistor has excellent hFE linearity and is complementary to another transistor model.

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A.h
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71 views3 pages

KTC3198 Kec

This document provides technical data for an epitaxial planar NPN transistor. It lists maximum ratings, electrical characteristics, and notes that the transistor has excellent hFE linearity and is complementary to another transistor model.

Uploaded by

A.h
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR KTC3198

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.


SWITCHING APPLICATION.

FEATURES
・Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
・Low Noise : NF=1dB(Typ.). at f=1kHz.
・Complementary to KTA1266.

MAXIMUM RATING (Ta=25℃)


CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Base Current IB 50 mA
625
Collector Power Dissipation *PC mW
400
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW

ELECTRICAL CHARACTERISTICS (Ta=25℃)


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
hFE(1) (Note) VCE=6V, IC=2mA 70 - 700
DC Current Gain
hFE(2) VCE=6V, IC=150mA 25 100 -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Base Intrinsic Resistance rbb’ VCB=10V, IE=1mA, f=30MHz - 50 - Ω
Noise Figure NF VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB
Note : hFE(1) Classification O:70～140, Y:120～240, GR:200～400, BL:300~700

2013. 7. 08 Revision No : 3 1/3


KTC3198

2013. 7. 08 Revision No : 3 2/3


KTC3198

2013. 7. 08 Revision No : 3 3/3

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