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KTA1268 PNP Transistor Specs

This document provides technical data for an epitaxial planar PNP transistor including its features, maximum ratings, electrical characteristics, and noise figure specifications. It is intended for low noise amplifier and high voltage applications and has characteristics such as low noise, high DC current gain, and high breakdown voltage.

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Irvin Ortega
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26 views2 pages

KTA1268 PNP Transistor Specs

This document provides technical data for an epitaxial planar PNP transistor including its features, maximum ratings, electrical characteristics, and noise figure specifications. It is intended for low noise amplifier and high voltage applications and has characteristics such as low noise, high DC current gain, and high breakdown voltage.

Uploaded by

Irvin Ortega
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR KTA1268

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

LOW NOISE AMPLIFIER APPLICATION.


HIGH VOLTAGE APPLICATION.

FEATURES
・Low Noise.
: NF=3dB(Typ.), Rg=100Ω, VCE=-6V, IC=-100μA, f=1kHz
: NF=0.5dB(Typ.), Rg=1kΩ, VCE=-6V, IC=-100μA, f=1kHz.
・High DC Current Gain : hFE=200～700.
・High Voltage : VCEO=-120V.
・Low Pulse Noise. Low 1/f Noise.
・Complementary to KTC3200.

MAXIMUM RATING (Ta=25℃)


CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -120 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
Base Current IB -50 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -120 - - V
DC Current Gain hFE(Note) VCE=-6V, IC=-2mA 200 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-1mA - - -0.3 V
Base-Emitter Voltage VBE VCE=-6V, IC=-2mA - -0.65 - V
Transition Frequency fT VCE=-6V, IC=-1mA - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 - pF
VCE=-6V, IC=-100μA, f=10Hz, Rg=10kΩ - - 6.0
Noise Figure NF VCE=-6V, IC=-100μA, f=1kHz, Rg=10kΩ - - 2.0 dB
VCE=-6V, IC=-100μA f=1kHz, Rg=100Ω - 3.0 -
Note : hFE Classification GR:200～400, BL:350～700

2012. 6. 8 Revision No : 1 1/2


KTA1268

2012. 6. 8 Revision No : 1 2/2

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