SEMICONDUCTOR KTB2510

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

HIGH POWER AMPLIFIER

A Q B
DARLINGTON APPLICATION. K

F
I
FEATURES

E
Complementary to KTD1510

C
DIM MILLIMETERS
Recommended for 60W Audio Amplifier Output Stage. A 15.9 MAX

J
H
B 4.8 MAX
C _ 0.3
20.0 +

G
D _ 0.3
2.0 +
D d 1.0+0.3/-0.25
E 2.0

L
F 1.0
MAXIMUM RATING (Ta=25 ) d
G 3.3 MAX
H 9.0
CHARACTERISTIC SYMBOL RATING UNIT I 4.5
P P T M J 2.0
Collector-Base Voltage VCBO -160 V K 1.8 MAX
L _ 0.5
20.5 +
Collector-Emitter Voltage VCEO -150 V M 2.8
P _ 0.2
5.45 +
Emitter-Base Voltage VEBO -5 V 1 2 3 Q Φ3.2 + _ 0.2
T 0.6+0.3/-0.1
1. BASE
Collector Current IC -10 A
2. COLLECTOR (HEAT SINK)
Base Current IB -1 A 3. EMITTER

Collector Power Dissipation (Tc=25 ) PC 100 W

Junction Temperature Tj 150 TO-3P(N)
Storage Temperature Range Tstg -55 150

EQUIVALENT CIRCUIT
EMITTER
70Ω

BASE

COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -100 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-30mA, IB=0 -150 - - V
DC Current Gain hFE VCE=-4V, IC=-7A 5000 12000 20000
Collector-Emitter Saturation Voltage VCE(sat) IC=-7A, IB=-7mA - - -2.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-7A, IB=-7mA - - -3.0 V
Transition Frequency fT VCE=-12V, IC=-2A - 50 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 230 - pF

2008. 4. 18 Revision No : 2 1/3

 KTB2510

2008. 4. 18 Revision No : 2 2/3

 KTB2510

2008. 4. 18 Revision No : 2 3/3