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Power Amplifier Application, Power Switching Application

This document provides specifications for a PNP silicon transistor. It lists maximum ratings including voltages, currents, power and temperature. It also lists typical electrical characteristics such as gain, breakdown voltages, saturation voltages, capacitance and switching times. The transistor is suitable for power amplifier and switching applications and has a gain of 70-240 with classifications for lower and higher gain ranges.

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Mathieu Fongang
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50 views1 page

Power Amplifier Application, Power Switching Application

This document provides specifications for a PNP silicon transistor. It lists maximum ratings including voltages, currents, power and temperature. It also lists typical electrical characteristics such as gain, breakdown voltages, saturation voltages, capacitance and switching times. The transistor is suitable for power amplifier and switching applications and has a gain of 70-240 with classifications for lower and higher gain ranges.

Uploaded by

Mathieu Fongang
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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风光欣技术资料 A1241

—PNP silicon —
■■APPLICATION：Power Amplifier Application,Power Switching Application.

■■MAXIMUM RATINGS （Ta＝25℃）

PARAMETER SYMBOL RATING UNIT

Collector-base voltage VCBO -50 V

Collector-emitter voltage VCEO -50 V

Emitter-base voltage VEBO -5 V

Collector current IC -2 A

Collector Power Dissipation PC 1 W

Junction Temperature TJ 150 ℃

Storage Temperature Range Tstg ﹣55~150 ℃

■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION

Common Emitter DC Current Gain hＦＥ 70 240 VCE= -2V，Ic=-0.5 A

Collector Cut-off Current ICBO -1 µA VCB= -50V，IE=0

Emitter Cut-off Current IEBO -1 µA VEB= -5 V，Ic=0

Collector-Base Breakdown Voltage BVCBO -50 V Ic= -0.1mA，IE=0

Collector-Emitter Breakdown Voltage BVCEO -50 V Ic= -1.0 mA，IB=0

Emitter-Base Breakdown Voltage BVEBO -5 V IE= -0.1 mA，Ic=0

Collector-Emitter Saturation Voltage VCE(sat) -0.5 V Ic= -1 A，IB= -0.05A

Base-Emitter Saturation Voltage VBE(sat) -1.2 V Ic= -1A, IB= -0.05A

Gain bandwidth product fT 100 MHz Ic= -0.5A，VCE= -2 V

Common Base Output Capacitance Cob 40 PF VCB= -10V, IE=0, f = 1 MHz

Turn on time ton 0.1 µs IB1= IB2 = -0.05A


Vcc= -30V
Turn off time tf 0.1 µs

■■hFE Classification
Classification
O Y
hFE 70～140 120～240

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