Production specification
Epitaxial Planar NPN Transistor MJD122
FEATURES
High DC Current Gain. Pb
Built-in a Damper Diode at E-C. Lead-free
Lead Formed for Surface Mount Applications.
Straight Lead.
Complement to MJD127.
TO-251 TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Volage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 8 A
ICP Collector Power Dissipation 16 A
IB Base Current 120 mA
PC Collector Power Dissipation 1.5 W
Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃
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Rev.A 1
Production specification
Epitaxial Planar NPN Transistor MJD122
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-emitter sustaining voltage VCEO(sus) IC=30mA,IB=0 100 V
Collector cut-off current ICEO VCE=50V,IB=0 10 uA
Collector cut-off current ICBO VCB=100V,IE=0 10 uA
Emitter cut-off current IEBO VEB=5V,IC=0 2 mA
VCE=4V,IC=4A 1000 12K
DC current gain hFE
VCE=4V,IC=8A 100
IC=4A,IB=16mA 2
Collector-emitter saturation voltage VCE(sat) V
IC=8A,IB=80mA 4
Base-emitter saturation voltage VBE(sat) IC=8A,IB=80mA 4.5 V
Base-emitter on voltage VBE(on) VCE=4V,IC=4A 2.8 V
Output capacity Cob VCB=10V,IE=0,f=0.1MHz 200 pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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Rev.A 2
Production specification
Epitaxial Planar NPN Transistor MJD122
V/(W)029 www.gmesemi.com
Rev.A 3
Production specification
Epitaxial Planar NPN Transistor MJD122
PACKAGE OUTLINE
Plastic surface mounted package
TO-251
TO-251
A 2.200 2.400
b 0.500 0.700
c 0.460 0.580
D 6.500 6.700
D1 5.100 5.460
D2 4.830 Typ.
E 6.000 6.200
e 2.186 2.386
L 12.000 12.600
L1 5.100 Typ.
L2 1.400 1.700
Φ 1.100 1.300
h 0.000 0.300
V 5.350 Typ.
All Dimensions in mm
PACKAGE OUTLINE
Plastic surface mounted package
TO-252
TO-252
A 4.95 5.59
C D B 5.40 6.63
A K C 6.05 7.10
D 2.20 2.40
E 0.40 0.61
G
B
F 8.80 10.60
F
G 5.35 Typ.
H 1.98 2.59
E I 0.50 0.90
H
I
J 0.50 1.20
K 0.45 0.89
All Dimensions in mm
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Rev.A 4
Production specification
Epitaxial Planar NPN Transistor MJD122
SOLDERING FOOTPRINT
6.40
6.80
2.70
1.50
1.80
2.30 2.30 Unit:mm
PACKAGE INFORMATION
Device Package Shipping
TO-251/252 80PCS/Tube
MJD122
TO-252 2500PCS/Tape&Reel
V/(W)029 www.gmesemi.com
Rev.A 5
