SGT65R65AL

Datasheet

650 V, 49 mΩ typ., 25 A, e-mode PowerGaN transistor

Features

Order code VDS RDS(on) max. ID Series

1 SGT65R65AL 650 V 65 mΩ 25 A G-HEMT

2
3
4 • Enhancement mode normally off transistor
PowerFLAT 5x6 HV
• Very high switching speed
for PowerGaN • High power management capability
D(5,6,7,8) • Extremely low capacitances
• Kelvin source pad for optimum gate driving
• Zero reverse recovery charge

G(4)
Applications
• AC-DC converters
• AC-DC PSU for server and telecom
KS(3) S(1,2) G4D5678S12KS3 • LED illumination
• Uninterruptable power supplies (UPS)

Description
The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a
well established packaging technology. The resulting G-HEMT device provides
extremely low conduction losses, high current capability and ultra fast switching
operation to enable high power density and unbeatable efficiency performances.

Product status link

SGT65R65AL

Product summary

Order code SGT65R65AL

Marking 65R65A
PowerFLAT 5x6 HV
Package
for PowerGaN
Packing Tape and reel

DS13251 - Rev 8 - September 2023 www.st.com

For further information contact your local STMicroelectronics sales office.
 SGT65R65AL
Electrical ratings

1 Electrical ratings

TC = 25 °C unless otherwise specified.

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

Drain-source voltage 650

VDS V
Drain-source voltage (transient, tp < 1 μs) 750

VGS Gate-source voltage -10 to 7 V

Drain current (continuous) at TC = 25 °C 25

ID (1) A
Drain current (continuous) at TC = 100 °C 25

IDM Pulse drain current (tp = 100 μs) 70 A

Total power dissipation at TC = 25 °C 305

PTOT W
Total power dissipation at TA = 25 °C 5

Tstg Storage temperature range °C

-55 to 150
TJ Operating junction temperature range °C

1. Limited by package.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC (1)
Thermal resistance, junction-to-case 0.41 °C/W

RthJA(1)(2) Thermal resistance, junction-to-ambient 25 °C/W

1. Specified by design, not tested in production.

2. Device mounted on 1.6 mm thick, FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias
under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper layers under the thermal pad
and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling.

DS13251 - Rev 8 page 2/17

 SGT65R65AL
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BL)DSS Drain-source blocking voltage VGS = 0 V, ID ≤ 10 μA 650 V

VGS = 0 V, VDS = 650 V 0.5

IDSS Drain-source leakage current μA
VGS = 0 V, VDS = 650 V, TJ = 150 °C 50

IGSS Gate-source leakage current VDS = 0 V, VGS = 6 V 100 μA

VGS(th) Gate threshold voltage VDS = 0.01 V, ID = 2.3 mA 1.8 V

VGS = 6 V, ID = 15 A 49 65
RDS(on) Static drain-source on-resistance mΩ
VGS = 6 V, ID = 15 A, TJ = 150 °C 116

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 286 - pF

Coss Output capacitance VGS = 0 V, VDS = 400 V, f = 1 MHz - 85 - pF

Crss Reverse transfer capacitance - 3 - pF

Equivalent output capacitance

Co(er)(1) - 125 - pF
energy related
VGS = 0 V, VDS = 0 to 400 V
Equivalent output capacitance
Co(tr)(2) - 156 - pF
time related
RG Intrinsic gate resistance f = 5 MHz, ID = 0 A - 1.2 - Ω

Vplat Gate plateau voltage VDS = 400 V, ID = 15 A - 2.5 - V

Qg Total gate charge - 5.4 - nC

VGS = 0 to 6 V, VDS = 400 V, ID = 15 A
Qgs Gate-source charge (see Figure 19. Test circuit for gate - 1.3 - nC

Qgd charge behavior)

Gate-drain charge - 1.9 - nC

Qrr Reverse recovery charge - 0 - nC

VGS = 0 V, VDS = 400 V
Qoss Output charge - 70 - nC

1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to the stated
value.
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to the stated
value.

DS13251 - Rev 8 page 3/17

 SGT65R65AL
Electrical characteristics

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDS = 400 V, ID = 15 A, VGS = 0 to 6 V, - 4.5 - ns

tf Fall time RG(on) = 10 Ω, RG(off) = 2.2 Ω, L = 500 μH - 5.6 - ns

(see Figure 20. Test circuit for inductive
td(off) Turn-off delay time - 9.8 - ns
load switching times and Figure 21.
tr Rise time Switching time waveforms) - 10.9 - ns

td(on) Turn-on delay time VDS = 400 V, ID = 15 A, VGS = 0 to 6 V, - 5.2 - ns

tf Fall time RG(on) = 10 Ω, RG(off) = 2.2 Ω, L = 500 μH, - 5.3 - ns

td(off) Turn-off delay time TC =150 °C - 10 - ns

(see Figure 20. Test circuit for inductive
tr load switching times and Figure 21.
Rise time - 12.5 - ns
Switching time waveforms)
Eon Turn-on switching energy VDS = 400 V, ID = 15 A, VGS = 0 to 6 V, - 33.8 - µJ

Eoff Turn-off switching energy RG(on) = 10 Ω, RG(off) = 2.2 Ω, L = 500 μH - 19.5 - µJ

Table 6. Reverse conduction

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD Source-drain reverse voltage VGS = 0 V, ISD = 15 A - 3.3 - V

DS13251 - Rev 8 page 4/17

 SGT65R65AL
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area (TC = 25 °C) Figure 2. Safe operating area (TC = 125 °C)

ID GADG100220231526SOA ID GADG100220231539SOA125
(A) (A)

tp =1µs

10 1 10 1
tp =10µs
Operation in this area tp =1µs
is limited by RDS(on) tp =100µs
Operation in this area tp =10µs
10 0 tp =1ms 10 0 is limited by RDS(on)
tp =10ms tp =100µs
TC = 25 °C TC = 125 °C
TJ ≤ 150 °C TJ ≤ 150 °C V(BR)DSS
V(BR)DSS
single pulse single pulse tp =10ms tp =1ms
10 -1 10 -1
10 0 10 1 10 2 VDS (V) 10 0 10 1 10 2 VDS (V)

Figure 3. Maximum transient thermal impedance Figure 4. Total power dissipation

ZthJC GADG100220231552ZTH PTOT GADG100220231553PTOT
(°C/W) (W)
0.3
0.2 300
duty=0.5 0.4
TJ = 150 °C
250
10 -1
200
0.1
150
0.05
10 -2
RthJC = 0.41 °C/W
Single pulse duty = ton/T 100

ton 50
T
10 -3 0
10 -6 10 -5 10 -4 10 -3 10 -2 tp (s) -25 25 75 125 TC (°C)

Figure 5. Typical output characteristics (TC = 25 °C) Figure 6. Typical output characteristics (TC = 150 °C)

ID GADG100220231611OCH ID GADG100220231611OCH150
(A) VGS = 6 V (A) VGS = 6 V
5V
60 30
5V
4V
50 25

40 20
4V

30 15
3V
20 10
3V
10 5

0 0
0.0 0.8 1.6 2.4 3.2 4.0 VDS (V) 0.0 0.8 1.6 2.4 3.2 4.0 VDS (V)

DS13251 - Rev 8 page 5/17

 SGT65R65AL
Electrical characteristics (curves)

Figure 7. Typical transfer characteristics

Figure 8. Typical gate charge characteristics

VGS GADG100220231620QVG
ID GADG100220231620TCH (V)
(A) ID = 15 A
VDS = 4 V 6
60
VDS = 100 V
TC = 25 °C 5
50
4
40 VDS = 400 V

3
30
2
20
TC = 150°C
1
10
0
0 0 1 2 3 4 5 Qg (nC)
0 1 2 3 4 5 VGS (V)

Figure 9. Typical capacitance characteristics Figure 10. Typical output charge

C GADG100220231639CVR QOSS GADG100220231632QOC

(pF) (nC)

CISS 80

10 2 COSS
60

40
10 1
f = 1 MHz
20
CRSS

10 0 0
10 -1 10 0 10 1 10 2 VDS (V) 0 100 200 300 400 500 600 VDS (V)

Figure 11. Typical output capacitance stored energy Figure 12. Normalized on-resistance vs temperature

EOSS GADG100220231632EOS RDS(on) GADG100220231644RON

(μJ) (norm.)

20 2.5
ID = 15 A
VGS = 5 V, 6 V
16 2.0

12 1.5

8 1.0

4 0.5

0 0.0
0 100 200 300 400 500 600 VDS (V) -75 -25 25 75 125 TJ (°C)

DS13251 - Rev 8 page 6/17

 SGT65R65AL
Electrical characteristics (curves)

Figure 14. Typical drain-source on-resistance

Figure 13. Typical drain-source on-resistance (TC = 25 °C)
(TC = 150 °C)
RDS(on) GADG100220231650RID
(mΩ) RDS(on) GADG100220231652RID150
(mΩ)
65 160
VGS = 5 V
60 150
VGS = 5 V
140
55

VGS = 6 V 130
50
120
VGS = 6 V
45
110
40
0 10 20 30 40 50 60 ID (A) 100
0 5 10 15 20 25 30 35 ID (A)

Figure 15. Typical reverse conduction characteristics Figure 16. Typical reverse conduction characteristics
(TC = 25 °C) (TC = 150 °C)

ISD GADG100220231659RCC25 ISD GADG100220231700RCC150

(A) (A)
VGS = 6 V VGS = 6 V
60 30

50 25
VGS = 0 V

40 20
VGS = 0 V
30 15

20 10
VGS = -3 V VGS = -3 V
10 5

0 0
0 1 2 3 4 5 6 7 VSD (V) 0 1 2 3 4 5 6 7 VSD (V)

Figure 17. Normalized gate threshold vs temperature

VGS(th) GADG100220231707VTH
(norm.)
ID = 2.3 mA
1.2
VDS = 0.01 V

1.1

1.0

0.9

0.8

0.7
-75 -25 25 75 125 TC (°C)

DS13251 - Rev 8 page 7/17

 SGT65R65AL
Test circuits

3 Test circuits

Figure 18. Test circuit for transient drain-source voltage Figure 19. Test circuit for gate charge behavior

SiC MOSFET
RG
DRIVER

RGon DCBUS
DCBUS VDC_link
GaN HEMT

D.U.T. DRIVER
D.U.T.
GaN HEMT
VDS RGoff
RLOAD
VGS

GADG031220211521GT GADG270820210906SA

Figure 20. Test circuit for inductive load switching times Figure 21. Switching time waveforms

ton toff

td(on) tr td(off) tf
GaN HEMT

QH
90% 90%
DCBUS
RGon
10% VDS 10%
GaN HEMT
0
DRIVER
D.U.T. VGS 90%
QL

RGoff

0 10%

GADG270820210909SA AM01473v1

DS13251 - Rev 8 page 8/17

 SGT65R65AL
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 PowerFLAT 5x6 HV for PowerGaN package information

Figure 22. PowerFLAT 5x6 HV for PowerGaN package outline

DM00649592_PowerFLAT_5x6_HV_for_GaN_6

DS13251 - Rev 8 page 9/17

 SGT65R65AL
PowerFLAT 5x6 HV for PowerGaN package information

Table 7. PowerFLAT 5x6 HV for PowerGaN mechanical data

mm
Dim.
Min. Typ. Max.

A 0.80 0.95 1.00

A1 0.05
A2 0.20 0.25 0.30
b 0.30 0.50
C 5.65 5.85 6.05
D 5.10 5.20 5.30
D1 0.15 0.30 0.45
D2 4.30 4.40 4.50
D3 0.25 0.40 0.55
D4 4.80 5.00 5.20
D5 2.23 2.33 2.43
E 6.20 6.40 6.60
E1 3.62 3.72 3.82
E2 2.45 2.55 2.65
E4 0.40 0.50 0.60
E7 0.40 0.50 0.60
E8 0.39 0.49 0.59
E9 0.47 0.55 0.63
e 1.27
L 0.58 0.68 0.78
K 1.90 2.00 2.10
aaa 0.15
bbb 0.15
ccc 0.10
eee 0.10

DS13251 - Rev 8 page 10/17

 SGT65R65AL
PowerFLAT 5x6 HV for PowerGaN package information

Figure 23. PowerFLAT 5x6 HV for PowerGaN recommended footprint (dimensions are in mm)

DM00649592_Rev_6_footprint_for_GaN

DS13251 - Rev 8 page 11/17

 SGT65R65AL
PowerFLAT 5x6 HV for PowerGaN package information

Figure 24. Marking composition for PowerFLAT 5x6 HV for PowerGaN

PACKAGE FACE : TOP LEGEND

Unmarkable Surface
Marking Composition Field

a - EJECTOR
A - DOT
B - Second_lvl_intct
E C - STANDARD ST LOGO
C
A B D
D - ECO level
E - 2D MATRIX CODE
F - MARKING AREA
F
a G - MARKING AREA
G H H - ADDITIONAL INFORMATION
(MAX CHAR ALLOWED = 2)
I - Assy Plant
(PP)
I J K L
J - BE Sequence
(LLL)
K - Assy Year
(Y)

L - Assy Week
(WW)

GADG230220210901SA

Engineering samples
These samples are clearly identified by “ES” digits in the marking additional information field of each unit. These
samples are intended to be used for electrical compatibility evaluation only; usage for any other purpose may be
agreed only upon written authorization by ST. ST is not liable for any customer usage in production and/or in
reliability qualification trials.
Commercial samples
Fully qualified parts from ST standard production with no limitations of use or special identification marking.

DS13251 - Rev 8 page 12/17

 SGT65R65AL
PowerFLAT 5x6 packing information

4.2 PowerFLAT 5x6 packing information

Figure 25. PowerFLAT 5x6 tape (dimensions are in mm)

(I) Measured from centreline of sprocket hole

to centreline of pocket. Base and bulk quantity 3000 pcs
All dimensions are in millimeters
(II) Cumulative tolerance of 10 sprocket
holes is ±0.20.

(III) Measured from centreline of sprocket

hole to centreline of pocket

8234350_Tape_rev_C

Figure 26. PowerFLAT 5x6 package orientation in carrier tape

Pin 1 identification

DS13251 - Rev 8 page 13/17

 SGT65R65AL
PowerFLAT 5x6 packing information

Figure 27. PowerFLAT 5x6 reel

DS13251 - Rev 8 page 14/17

 SGT65R65AL

Revision history
Table 8. Document revision history

Date Version Changes

07-Feb-2020 1 First release.

14-Feb-2020 2 Modified description on cover page.
30-Mar-2020 3 Updated Section 3 Package information.
Updated Section 3.1 PowerFLAT 5x6 HV for GaN package information.
08-Jul-2020 4
Minor text changes.
Updated Features, Internal schematic, PowerFLAT 5x6 HV for PowerGaN cover image
silhouette, Applications, Product status / summary and Description in cover page.
Updated Table 1. Absolute maximum ratings.
Updated Table 2. Thermal data.

14-Dec-2022 5 Updated Table 3. Static.

Inserted Table 4. Dynamic.
Inserted Figure 3. Marking composition for PowerFLAT 5x6 HV for PowerGaN .
Inserted Section 3.2 PowerFLAT 5x6 packing information.
Minor text changes.
Updated title and Features in cover page.
Updated Table 1. Absolute maximum ratings.
Updated Table 2. Thermal data.
Updated Table 3. Static.
14-Feb-2023 6 Updated Table 4. Dynamic.
Added Table 5. Switching times and Table 6. Reverse conduction.
Added Section 2.1 Electrical characteristics (curves).
Added Section 3 Test circuits.
Updated Figure 24. Marking composition for PowerFLAT 5x6 HV for PowerGaN.
23-Mar-2023 7 Updated Table 1. Absolute maximum ratings.
11-Sep-2023 8 Updated Table 3. Static.

DS13251 - Rev 8 page 15/17

 SGT65R65AL
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1 PowerFLAT 5x6 HV for PowerGaN package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 PowerFLAT 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

DS13251 - Rev 8 page 16/17

 SGT65R65AL

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DS13251 - Rev 8 page 17/17