2Gb: x4, x8, x16 DDR3L SDRAM

Description

DDR3L SDRAM
MT41K512M4 – 64 Meg x 4 x 8 banks
MT41K256M8 – 32 Meg x 8 x 8 banks
MT41K128M16 – 16 Meg x 16 x 8 banks

Description • Automatic self refresh (ASR)

• Write leveling
The 1.35V DDR3L SDRAM device is a low-voltage ver- • Multipurpose register
sion of the 1.5V DDR3 SDRAM device. Refer to the • Output driver calibration
DDR3 (1.5V) SDRAM data sheet specifications when
running in 1.5V compatible mode. Options Marking
Features • Configuration
• VDD = V DDQ = 1.35V (1.283–1.45V) – 512 Meg x 4 512M4
• Backward-compatible to V DD = V DDQ = 1.5V ±0.075V – 256 Meg x 8 256M8
• Differential bidirectional data strobe – 128 Meg x 16 128M16
• 8n-bit prefetch architecture • FBGA package (Pb-free) – x4, x8
• Differential clock inputs (CK, CK#) – 78-ball (8mm x 10.5mm x 1.2mm)
DA
• 8 internal banks Rev. K
• Nominal and dynamic on-die termination (ODT) • FBGA package (Pb-free) – x16
for data, strobe, and mask signals – 96-ball (8mm x 14mm x 1.2mm) JT
• Programmable CAS (READ) latency (CL) Rev. K
• Programmable posted CAS additive latency (AL) • Timing – cycle time
• Programmable CAS (WRITE) latency (CWL) – 1.07ns @ CL = 13 (DDR3-1866) -107
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 – 1.25ns @ CL = 11 (DDR3-1600) -125
(via the mode register set [MRS]) – 1.5ns @ CL = 9 (DDR3-1333) -15E
• Selectable BC4 or BL8 on-the-fly (OTF) – 1.875ns @ CL = 7 (DDR3-1066) -187E
• Self refresh mode • Operating temperature
• TC of 95°C – Commercial (0°C ≤ T C ≤ +95°C) None
– 64ms, 8192-cycle refresh up to 85°C – Industrial (–40°C ≤ T C ≤ +95°C) IT
– 32ms, 8192-cycle refresh at >85°C to 95°C • Revision :K
• Self refresh temperature (SRT)

Table 1: Key Timing Parameters

Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL tRCD (ns) tRP (ns) CL (ns)
-1071, 2, 3 1866 13-13-13 13.91 13.91 13.91
-1251, 2 1600 11-11-11 13.75 13.75 13.75
-15E1 1333 9-9-9 13.5 13.5 13.5
-187E 1066 7-7-7 13.1 13.1 13.1

Notes: 1. Backward compatible to 1066, CL = 7 (-187E).

2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).

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2Gb_DDR3L.pdf - Rev. O 09/18 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
 2Gb: x4, x8, x16 DDR3L SDRAM
Description

Table 2: Addressing

Parameter 512 Meg x 4 256 Meg x 8 128 Meg x 16

Configuration 64 Meg x 4 x 8 banks 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks
Refresh count 8K 8K 8K
Row address 32K A[14:0] 32K A[14:0] 16K A[13:0]
Bank address 8 BA[2:0] 8 BA[2:0] 8 BA[2:0]
Column address 2K A[11, 9:0] 1K A[9:0] 1K A[9:0]

Figure 1: DDR3L Part Numbers

Example Part Number: MT41K256M8DA-107:K

- :
MT41K Configuration Package Speed Revision

{
:K Revision
Configuration
512 Meg x 4 512M4 Temperature
256 Meg x 8 256M8 Commercial None
128 Meg x 16 128M16 Industrial temperature IT

Package Speed Grade

78-ball 8mm x 10.5mm FBGA DA -107 tCK = 1.071ns, CL = 13

96-ball 8mm x 14mm FBGA JT -125 tCK = 1.25ns, CL = 11

-15E tCK = 1.5ns, CL = 9

-187E tCK = 1.87ns, CL = 7

Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on
http://www.micron.com for available offerings.

FBGA Part Marking Decoder

Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Description

Contents
Important Notes and Warnings ....................................................................................................................... 12
State Diagram ................................................................................................................................................ 13
Functional Description ................................................................................................................................... 14
Industrial Temperature ............................................................................................................................... 14
General Notes ............................................................................................................................................ 14
Functional Block Diagrams ............................................................................................................................. 16
Ball Assignments and Descriptions ................................................................................................................. 18
Package Dimensions ....................................................................................................................................... 24
Electrical Specifications .................................................................................................................................. 26
Thermal Characteristics .................................................................................................................................. 38
Electrical Specifications – IDD Specifications and Conditions ............................................................................ 40
Electrical Characteristics – IDD Specifications .................................................................................................. 51
Electrical Specifications – DC and AC .............................................................................................................. 52
DC Operating Conditions ........................................................................................................................... 52
Input Operating Conditions ........................................................................................................................ 53
DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 57
DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 61
DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 63
ODT Characteristics ....................................................................................................................................... 64
1.35V ODT Resistors ................................................................................................................................... 65
ODT Sensitivity .......................................................................................................................................... 66
ODT Timing Definitions ............................................................................................................................. 66
Output Driver Impedance ............................................................................................................................... 70
34 Ohm Output Driver Impedance .............................................................................................................. 71
DDR3L 34 Ohm Driver ................................................................................................................................ 72
DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 73
DDR3L Alternative 40 Ohm Driver ............................................................................................................... 74
DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 74
Output Characteristics and Operating Conditions ............................................................................................ 76
Reference Output Load ............................................................................................................................... 79
Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 79
Slew Rate Definitions for Differential Output Signals .................................................................................... 81
Speed Bin Tables ............................................................................................................................................ 82
Electrical Characteristics and AC Operating Conditions ................................................................................... 86
Command and Address Setup, Hold, and Derating .......................................................................................... 104
Data Setup, Hold, and Derating ...................................................................................................................... 111
Commands – Truth Tables ............................................................................................................................. 120
Commands ................................................................................................................................................... 123
DESELECT ................................................................................................................................................ 123
NO OPERATION ........................................................................................................................................ 123
ZQ CALIBRATION LONG ........................................................................................................................... 123
ZQ CALIBRATION SHORT .......................................................................................................................... 123
ACTIVATE ................................................................................................................................................. 123
READ ........................................................................................................................................................ 123
WRITE ...................................................................................................................................................... 124
PRECHARGE ............................................................................................................................................. 125
REFRESH .................................................................................................................................................. 125
SELF REFRESH .......................................................................................................................................... 126
DLL Disable Mode ..................................................................................................................................... 127
Input Clock Frequency Change ...................................................................................................................... 131

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 2Gb: x4, x8, x16 DDR3L SDRAM
Description

Write Leveling ............................................................................................................................................... 133

Write Leveling Procedure ........................................................................................................................... 135
Write Leveling Mode Exit Procedure ........................................................................................................... 137
Initialization ................................................................................................................................................. 138
Voltage Initialization/Change ........................................................................................................................ 140
VDD Voltage Switching ............................................................................................................................... 141
Mode Registers .............................................................................................................................................. 142
Mode Register 0 (MR0) ................................................................................................................................... 143
Burst Length ............................................................................................................................................. 143
Burst Type ................................................................................................................................................. 144
DLL RESET ................................................................................................................................................ 145
Write Recovery .......................................................................................................................................... 146
Precharge Power-Down (Precharge PD) ...................................................................................................... 146
CAS Latency (CL) ....................................................................................................................................... 146
Mode Register 1 (MR1) ................................................................................................................................... 148
DLL ENABLE/DISABLE .............................................................................................................................. 148
Output Drive Strength ............................................................................................................................... 149
OUTPUT ENABLE/DISABLE ...................................................................................................................... 149
TDQS ENABLE .......................................................................................................................................... 149
On-Die Termination (ODT) ........................................................................................................................ 150
WRITE LEVELING ..................................................................................................................................... 150
Posted CAS Additive Latency (AL) ............................................................................................................... 150
Mode Register 2 (MR2) ................................................................................................................................... 152
CAS WRITE Latency (CWL) ........................................................................................................................ 152
AUTO SELF REFRESH (ASR) ....................................................................................................................... 153
SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 153
SRT versus ASR .......................................................................................................................................... 154
Dynamic On-Die Termination (ODT) ......................................................................................................... 154
Mode Register 3 (MR3) ................................................................................................................................... 155
MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 155
MPR Functional Description ...................................................................................................................... 156
MPR Address Definitions and Bursting Order .............................................................................................. 157
MPR Read Predefined Pattern .................................................................................................................... 162
MODE REGISTER SET (MRS) Command ........................................................................................................ 162
ZQ CALIBRATION Operation ......................................................................................................................... 163
ACTIVATE Operation ..................................................................................................................................... 164
READ Operation ............................................................................................................................................ 166
WRITE Operation .......................................................................................................................................... 177
DQ Input Timing ....................................................................................................................................... 185
PRECHARGE Operation ................................................................................................................................. 187
SELF REFRESH Operation .............................................................................................................................. 187
Extended Temperature Usage ........................................................................................................................ 189
Power-Down Mode ........................................................................................................................................ 190
RESET Operation ........................................................................................................................................... 198
On-Die Termination (ODT) ............................................................................................................................ 200
Functional Representation of ODT ............................................................................................................. 200
Nominal ODT ............................................................................................................................................ 200
Dynamic ODT ............................................................................................................................................... 202
Dynamic ODT Special Use Case ................................................................................................................. 202
Functional Description .............................................................................................................................. 202
Synchronous ODT Mode ................................................................................................................................ 208
ODT Latency and Posted ODT .................................................................................................................... 208

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 2Gb: x4, x8, x16 DDR3L SDRAM
Description

Timing Parameters .................................................................................................................................... 208

ODT Off During READs .............................................................................................................................. 211
Asynchronous ODT Mode .............................................................................................................................. 213
Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 215
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 217
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 219

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 2Gb: x4, x8, x16 DDR3L SDRAM
Description

List of Figures
Figure 1: DDR3L Part Numbers ........................................................................................................................ 2
Figure 2: Simplified State Diagram ................................................................................................................. 13
Figure 3: 512 Meg x 4 Functional Block Diagram ............................................................................................. 16
Figure 4: 256 Meg x 8 Functional Block Diagram ............................................................................................. 17
Figure 5: 128 Meg x 16 Functional Block Diagram ........................................................................................... 17
Figure 6: 78-Ball FBGA – x4, x8 Ball Assignments (Top View) ........................................................................... 18
Figure 7: 96-Ball FBGA – x16 Ball Assignments (Top View) ............................................................................... 19
Figure 8: 78-Ball FBGA – x4, x8 (DA) ............................................................................................................... 24
Figure 9: 96-Ball FBGA – x16 (JT) ................................................................................................................... 25
Figure 10: Thermal Measurement Point ......................................................................................................... 39
Figure 11: DDR3L 1.35V Input Signal .............................................................................................................. 56
Figure 12: Overshoot ..................................................................................................................................... 57
Figure 13: Undershoot ................................................................................................................................... 58
Figure 14: V IX for Differential Signals .............................................................................................................. 59
Figure 15: Single-Ended Requirements for Differential Signals ........................................................................ 59
Figure 16: Definition of Differential AC-Swing and tDVAC ............................................................................... 60
Figure 17: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 62
Figure 18: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .............. 63
Figure 19: ODT Levels and I-V Characteristics ................................................................................................ 64
Figure 20: ODT Timing Reference Load .......................................................................................................... 67
Figure 21: tAON and tAOF Definitions ............................................................................................................ 68
Figure 22: tAONPD and tAOFPD Definitions ................................................................................................... 68
Figure 23: tADC Definition ............................................................................................................................. 69
Figure 24: Output Driver ................................................................................................................................ 70
Figure 25: DQ Output Signal .......................................................................................................................... 77
Figure 26: Differential Output Signal .............................................................................................................. 78
Figure 27: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 79
Figure 28: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 80
Figure 29: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 81
Figure 30: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock) ............................................. 107
Figure 31: Nominal Slew Rate for tIH (Command and Address – Clock) ........................................................... 108
Figure 32: Tangent Line for tIS (Command and Address – Clock) .................................................................... 109
Figure 33: Tangent Line for tIH (Command and Address – Clock) .................................................................... 110
Figure 34: Nominal Slew Rate and tVAC for tDS (DQ – Strobe) ......................................................................... 116
Figure 35: Nominal Slew Rate for tDH (DQ – Strobe) ...................................................................................... 117
Figure 36: Tangent Line for tDS (DQ – Strobe) ................................................................................................ 118
Figure 37: Tangent Line for tDH (DQ – Strobe) ............................................................................................... 119
Figure 38: Refresh Mode ............................................................................................................................... 126
Figure 39: DLL Enable Mode to DLL Disable Mode ........................................................................................ 128
Figure 40: DLL Disable Mode to DLL Enable Mode ........................................................................................ 129
Figure 41: DLL Disable tDQSCK .................................................................................................................... 130
Figure 42: Change Frequency During Precharge Power-Down ........................................................................ 132
Figure 43: Write Leveling Concept ................................................................................................................. 133
Figure 44: Write Leveling Sequence ............................................................................................................... 136
Figure 45: Write Leveling Exit Procedure ....................................................................................................... 137
Figure 46: Initialization Sequence ................................................................................................................. 139
Figure 47: V DD Voltage Switching .................................................................................................................. 141
Figure 48: MRS to MRS Command Timing ( tMRD) ......................................................................................... 142
Figure 49: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 143
Figure 50: Mode Register 0 (MR0) Definitions ................................................................................................ 144

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 2Gb: x4, x8, x16 DDR3L SDRAM
Description

Figure 51: READ Latency .............................................................................................................................. 147

Figure 52: Mode Register 1 (MR1) Definition ................................................................................................. 148
Figure 53: READ Latency (AL = 5, CL = 6) ....................................................................................................... 151
Figure 54: Mode Register 2 (MR2) Definition ................................................................................................. 152
Figure 55: CAS WRITE Latency ...................................................................................................................... 153
Figure 56: Mode Register 3 (MR3) Definition ................................................................................................. 155
Figure 57: MPR Block Diagram ...................................................................................................................... 156
Figure 58: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 158
Figure 59: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 159
Figure 60: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 160
Figure 61: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 161
Figure 62: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 163
Figure 63: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 164
Figure 64: Example: tFAW ............................................................................................................................. 165
Figure 65: READ Latency .............................................................................................................................. 166
Figure 66: Consecutive READ Bursts (BL8) .................................................................................................... 168
Figure 67: Consecutive READ Bursts (BC4) .................................................................................................... 168
Figure 68: Nonconsecutive READ Bursts ....................................................................................................... 169
Figure 69: READ (BL8) to WRITE (BL8) .......................................................................................................... 169
Figure 70: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 170
Figure 71: READ to PRECHARGE (BL8) .......................................................................................................... 170
Figure 72: READ to PRECHARGE (BC4) ......................................................................................................... 171
Figure 73: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 171
Figure 74: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 171
Figure 75: Data Output Timing – tDQSQ and Data Valid Window .................................................................... 173
Figure 76: Data Strobe Timing – READs ......................................................................................................... 174
Figure 77: Method for Calculating tLZ and tHZ ............................................................................................... 175
Figure 78: tRPRE Timing ............................................................................................................................... 175
Figure 79: tRPST Timing ............................................................................................................................... 176
Figure 80: tWPRE Timing .............................................................................................................................. 178
Figure 81: tWPST Timing .............................................................................................................................. 178
Figure 82: WRITE Burst ................................................................................................................................ 179
Figure 83: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 180
Figure 84: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 180
Figure 85: Nonconsecutive WRITE to WRITE ................................................................................................. 181
Figure 86: WRITE (BL8) to READ (BL8) .......................................................................................................... 181
Figure 87: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 182
Figure 88: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 183
Figure 89: WRITE (BL8) to PRECHARGE ........................................................................................................ 184
Figure 90: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 184
Figure 91: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 185
Figure 92: Data Input Timing ........................................................................................................................ 186
Figure 93: Self Refresh Entry/Exit Timing ...................................................................................................... 188
Figure 94: Active Power-Down Entry and Exit ................................................................................................ 192
Figure 95: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 192
Figure 96: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ................................................................ 193
Figure 97: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ............................................. 193
Figure 98: Power-Down Entry After WRITE .................................................................................................... 194
Figure 99: Power-Down Entry After WRITE with Auto Precharge (WRAP) ........................................................ 194
Figure 100: REFRESH to Power-Down Entry .................................................................................................. 195
Figure 101: ACTIVATE to Power-Down Entry ................................................................................................. 195
Figure 102: PRECHARGE to Power-Down Entry ............................................................................................. 196

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 2Gb: x4, x8, x16 DDR3L SDRAM
Description

Figure 103: MRS Command to Power-Down Entry ......................................................................................... 196

Figure 104: Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 197
Figure 105: RESET Sequence ......................................................................................................................... 199
Figure 106: On-Die Termination ................................................................................................................... 200
Figure 107: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 205
Figure 108: Dynamic ODT: Without WRITE Command .................................................................................. 205
Figure 109: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 206
Figure 110: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 207
Figure 111: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 207
Figure 112: Synchronous ODT ...................................................................................................................... 209
Figure 113: Synchronous ODT (BC4) ............................................................................................................. 210
Figure 114: ODT During READs .................................................................................................................... 212
Figure 115: Asynchronous ODT Timing with Fast ODT Transition .................................................................. 214
Figure 116: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 216
Figure 117: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 218
Figure 118: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 220
Figure 119: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 220

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 2Gb: x4, x8, x16 DDR3L SDRAM
Description

List of Tables
Table 1: Key Timing Parameters ....................................................................................................................... 1
Table 2: Addressing ......................................................................................................................................... 2
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions .............................................................................................. 20
Table 4: 96-Ball FBGA – x16 Ball Descriptions ................................................................................................. 22
Table 5: Input/Output Capacitance ................................................................................................................ 26
Table 6: DC Electrical Characteristics and Operating Conditions – 1.35V Operation ......................................... 26
Table 7: DC Electrical Characteristics and Operating Conditions – 1.5V Operation ........................................... 26
Table 8: Input Switching Conditions – Command and Address ........................................................................ 27
Table 9: Input Switching Conditions – DQ and DM ......................................................................................... 27
Table 10: Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .................................................. 28
Table 11: Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ...................... 28
Table 12: RTT Effective Impedance ................................................................................................................. 29
Table 13: Reference Settings for ODT Timing Measurements ........................................................................... 30
Table 14: 34Ω Driver Impedance Characteristics ............................................................................................. 30
Table 15: 40Ω Driver Impedance Characteristics ............................................................................................. 30
Table 16: Single-Ended Output Driver Characteristics ..................................................................................... 31
Table 17: Differential Output Driver Characteristics ........................................................................................ 31
Table 18: Electrical Characteristics and AC Operating Conditions .................................................................... 31
Table 19: Derating Values for tIS/tIH – AC160/DC90-Based .............................................................................. 32
Table 20: Derating Values for tIS/tIH – AC135/DC90-Based .............................................................................. 33
Table 21: Derating Values for tIS/tIH – AC125/DC90-Based .............................................................................. 33
Table 22: Minimum Required Time tVAC Above V IH(AC) (Below V IL[AC]) for Valid ADD/CMD Transition .............. 34
Table 23: Derating Values for tDS/tDH – AC160/DC90-Based ........................................................................... 34
Table 24: Derating Values for tDS/tDH – AC135/DC90-Based ........................................................................... 35
Table 25: Derating Values for tDS/tDH – AC130/DC100-Based at 2V/ns ............................................................ 36
Table 26: Minimum Required Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition .......................... 37
Table 27: Thermal Characteristics .................................................................................................................. 38
Table 28: Thermal Impedance ........................................................................................................................ 39
Table 29: DDR3L Timing Parameters Used for I DD Measurements – Clock Units ............................................... 40
Table 30: DDR3L IDD0 Measurement Loop ...................................................................................................... 41
Table 31: DDR3L IDD1 Measurement Loop ...................................................................................................... 42
Table 32: DDR3L IDD Measurement Conditions for Power-Down Currents ....................................................... 43
Table 33: DDR3L IDD2N and IDD3N Measurement Loop .................................................................................... 44
Table 34: DDR3L IDD2NT Measurement Loop .................................................................................................. 44
Table 35: DDR3L IDD4R Measurement Loop .................................................................................................... 45
Table 36: DDR3L IDD4W Measurement Loop .................................................................................................... 46
Table 37: DDR3L IDD5B Measurement Loop .................................................................................................... 47
Table 38: DDR3L IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 ........................................................ 48
Table 39: DDR3L IDD7 Measurement Loop ...................................................................................................... 49
Table 40: IDD Maximum Limits – Die Rev. K .................................................................................................... 51
Table 41: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions .............................................. 52
Table 42: DDR3L 1.35V DC Electrical Characteristics and Input Conditions ..................................................... 53
Table 43: DDR3L 1.35V Input Switching Conditions - Command and Address .................................................. 54
Table 44: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .............................. 55
Table 45: DDR3L Control and Address Pins ..................................................................................................... 57
Table 46: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins ............................................................................. 57
Table 47: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ... 60
Table 48: Single-Ended Input Slew Rate Definition .......................................................................................... 61
Table 49: DDR3L 1.35V Differential Input Slew Rate Definition ........................................................................ 63
Table 50: On-Die Termination DC Electrical Characteristics ............................................................................ 64

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 2Gb: x4, x8, x16 DDR3L SDRAM
Description

Table 51: 1.35V RTT Effective Impedance ........................................................................................................ 65

Table 52: ODT Sensitivity Definition .............................................................................................................. 66
Table 53: ODT Temperature and Voltage Sensitivity ........................................................................................ 66
Table 54: ODT Timing Definitions .................................................................................................................. 67
Table 55: DDR3L(1.35V) Reference Settings for ODT Timing Measurements .................................................... 67
Table 56: DDR3L 34 Ohm Driver Impedance Characteristics ........................................................................... 71
Table 57: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ........................................... 72
Table 58: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.35V ..................................... 72
Table 59: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.45V ..................................... 72
Table 60: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.283 ..................................... 73
Table 61: DDR3L 34 Ohm Output Driver Sensitivity Definition ........................................................................ 73
Table 62: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity .................................................. 73
Table 63: DDR3L 40 Ohm Driver Impedance Characteristics ........................................................................... 74
Table 64: DDR3L 40 Ohm Output Driver Sensitivity Definition ........................................................................ 74
Table 65: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 75
Table 66: DDR3L Single-Ended Output Driver Characteristics ......................................................................... 76
Table 67: DDR3L Differential Output Driver Characteristics ............................................................................ 77
Table 68: DDR3L Differential Output Driver Characteristics V OX(AC) ................................................................. 78
Table 69: Single-Ended Output Slew Rate Definition ....................................................................................... 79
Table 70: Differential Output Slew Rate Definition .......................................................................................... 81
Table 71: DDR3L-1066 Speed Bins .................................................................................................................. 82
Table 72: DDR3L-1333 Speed Bins .................................................................................................................. 83
Table 73: DDR3L-1600 Speed Bins .................................................................................................................. 84
Table 74: DDR3L-1866 Speed Bins .................................................................................................................. 85
Table 75: Electrical Characteristics and AC Operating Conditions .................................................................... 86
Table 76: Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 96
Table 77: DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced – AC/DC-Based ............... 105
Table 78: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC160/DC90-Based ................................ 105
Table 79: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC135/DC90-Based ................................ 105
Table 80: DDR3L-1866 Derating Values for tIS/tIH – AC125/DC90-Based ........................................................ 106
Table 81: DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL[AC]) for Valid ADD/CMD Transition . 106
Table 82: DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based ....................... 112
Table 83: DDR3L Derating Values for tDS/tDH – AC160/DC90-Based .............................................................. 112
Table 84: DDR3L Derating Values for tDS/tDH – AC135/DC100-Based ............................................................ 112
Table 85: DDR3L Derating Values for tDS/tDH – AC130/DC100-Based at 2V/ns ............................................... 114
Table 86: DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ............. 115
Table 87: Truth Table – Command ................................................................................................................. 120
Table 88: Truth Table – CKE .......................................................................................................................... 122
Table 89: READ Command Summary ............................................................................................................ 124
Table 90: WRITE Command Summary .......................................................................................................... 124
Table 91: READ Electrical Characteristics, DLL Disable Mode ......................................................................... 130
Table 92: Write Leveling Matrix ..................................................................................................................... 134
Table 93: Burst Order .................................................................................................................................... 145
Table 94: MPR Functional Description of MR3 Bits ........................................................................................ 156
Table 95: MPR Readouts and Burst Order Bit Mapping ................................................................................... 157
Table 96: Self Refresh Temperature and Auto Self Refresh Description ............................................................ 189
Table 97: Self Refresh Mode Summary ........................................................................................................... 189
Table 98: Command to Power-Down Entry Parameters .................................................................................. 190
Table 99: Power-Down Modes ....................................................................................................................... 191
Table 100: Truth Table – ODT (Nominal) ........................................................................................................ 201
Table 101: ODT Parameters .......................................................................................................................... 201
Table 102: Write Leveling with Dynamic ODT Special Case ............................................................................. 202

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 2Gb: x4, x8, x16 DDR3L SDRAM
Description

Table 103: Dynamic ODT Specific Parameters ............................................................................................... 203

Table 104: Mode Registers for RTT,nom ............................................................................................................ 203
Table 105: Mode Registers for RTT(WR) ............................................................................................................ 204
Table 106: Timing Diagrams for Dynamic ODT .............................................................................................. 204
Table 107: Synchronous ODT Parameters ...................................................................................................... 209
Table 108: Asynchronous ODT Timing Parameters for All Speed Bins .............................................................. 214
Table 109: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................. 216

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 2Gb: x4, x8, x16 DDR3L SDRAM
Important Notes and Warnings

Important Notes and Warnings

Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,
including without limitation specifications and product descriptions. This document supersedes and replaces all
information supplied prior to the publication hereof. You may not rely on any information set forth in this docu-
ment if you obtain the product described herein from any unauthorized distributor or other source not authorized
by Micron.
Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi-
cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib-
utor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, death, or property damage resulting directly or indirectly from any use of non-
automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and con-
ditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron
products are not designed or intended for use in automotive applications unless specifically designated by Micron
as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to in-
demnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'
fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage
resulting from any use of non-automotive-grade products in automotive applications.
Critical Applications. Products are not authorized for use in applications in which failure of the Micron compo-
nent could result, directly or indirectly in death, personal injury, or severe property or environmental damage
("Critical Applications"). Customer must protect against death, personal injury, and severe property and environ-
mental damage by incorporating safety design measures into customer's applications to ensure that failure of the
Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron
component for any critical application, customer and distributor shall indemnify and hold harmless Micron and
its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, or death arising in any way out of such critical application, whether or not Mi-
cron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the
Micron product.
Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,
applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAIL-
URE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE
WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR
PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included
in customer's applications and products to eliminate the risk that personal injury, death, or severe property or en-
vironmental damages will result from failure of any semiconductor component.
Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential
damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,
breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly
authorized representative.

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© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
State Diagram

State Diagram

Figure 2: Simplified State Diagram

CKE L
Power
applied Initial- MRS, MPR,
Power Reset Self
on procedure ization write refresh
leveling
SRE
ZQCL MRS
SRX
From any
RESET
state ZQCL/ZQCS REF
ZQ Refreshing
calibration Idle

PDE
ACT
PDX

Active Precharge
power- Activating power-
down down
PDX
CKE L CKE L
PDE

Bank
active
WRITE WRITE READ READ

WRITE AP READ AP
READ
Writing WRITE
Reading

WRITE AP READ AP
WRITE AP READ AP

PRE, PREA
Writing Reading
PRE, PREA PRE, PREA

Precharging
Automatic
sequence
Command
sequence

ACT = ACTIVATE PREA = PRECHARGE ALL SRX = Self refresh exit

MPR = Multipurpose register READ = RD, RDS4, RDS8 WRITE = WR, WRS4, WRS8
MRS = Mode register set READ AP = RDAP, RDAPS4, RDAPS8 WRITE AP = WRAP, WRAPS4, WRAPS8
PDE = Power-down entry REF = REFRESH ZQCL = ZQ LONG CALIBRATION
PDX = Power-down exit RESET = START RESET PROCEDURE ZQCS = ZQ SHORT CALIBRATION
PRE = PRECHARGE SRE = Self refresh entry

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 2Gb: x4, x8, x16 DDR3L SDRAM
Functional Description

Functional Description
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation.
The double data rate architecture is an 8n-prefetch architecture with an interface de-
signed to transfer two data words per clock cycle at the I/O pins. A single read or write
operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-
cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-
half-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data
for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the
data strobes.
The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK
going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, com-
mand, and address signals are registered at every positive edge of CK. Input data is reg-
istered on the first rising edge of DQS after the WRITE preamble, and output data is ref-
erenced on the first rising edge of DQS after the READ preamble.
Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a se-
lected location and continue for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an ACTIVATE command, which is then
followed by a READ or WRITE command. The address bits registered coincident with
the ACTIVATE command are used to select the bank and row to be accessed. The ad-
dress bits registered coincident with the READ or WRITE commands are used to select
the bank and the starting column location for the burst access.
The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be
enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM
allows for concurrent operation, thereby providing high bandwidth by hiding row pre-
charge and activation time.
A self refresh mode is provided, along with a power-saving, power-down mode.

Industrial Temperature
The industrial temperature (IT) device requires that the case temperature not exceed
–40°C or 95°C. JEDEC specifications require the refresh rate to double when T C exceeds
85°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when T C is < 0°C or
>95°C.

General Notes
• The functionality and the timing specifications discussed in this data sheet are for the
DLL enable mode of operation (normal operation).
• Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to be
interpreted as any and all DQ collectively, unless specifically stated otherwise.
• The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as
DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise.

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© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
Functional Description

• Complete functionality may be described throughout the document; any page or dia-
gram may have been simplified to convey a topic and may not be inclusive of all re-
quirements.
• Any specific requirement takes precedence over a general statement.
• Any functionality not specifically stated is considered undefined, illegal, and not sup-
ported, and can result in unknown operation.
• Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4,
x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4,
x8).
• Dynamic ODT has a special use case: when DDR3 devices are architected for use in a
single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer
to the Dynamic ODT Special Use Case section.
• A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be
used, use the lower byte for data transfers and terminate the upper byte as noted:
– Connect UDQS to ground via 1kΩ* resistor.
– Connect UDQS# to V DD via 1kΩ* resistor.
– Connect UDM to V DD via 1kΩ* resistor.
– Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1kΩ resistors,* or float
DQ[15:8].
*If ODT is used, 1kΩ resistor should be changed to 4x that of the selected ODT.

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© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
Functional Block Diagrams

Functional Block Diagrams

DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally
configured as an 8-bank DRAM.

Figure 3: 512 Meg x 4 Functional Block Diagram

ODT
ODT
control
ZQ To pullup/pulldown
ZQ CAL
RZQ RESET# networks
ZQCL, ZQCS
CKE
Control
VSSQ A12 logic
CK, CK# VDDQ/2
BC4 (burst chop)
CS#
Columns 0, 1, and 2 RTT,nom RTT(WR)
Command

RAS# Bank 7 Bank 7

decode

CK,CK#
OTF Bank 6 Bank 6
CAS# Bank 5 SW1 SW2
Bank 5
Bank 4 Bank 4
WE# Bank 3 Bank 3
Bank 2 DLL
Bank 2
Bank 1 Bank 1 (1 . . . 4)
Refresh
15 READ
Mode registers counter
Row- Bank 0 Bank 0 FIFO 4
15 32 DQ[3:0]
address row- memory and
18 MUX address array data READ
32,768 DQ[3:0]
latch (32,768 x 256 x 32) MUX drivers DQS, DQS#
15 and
decoder

VDDQ/2
Sense amplifiers
32 BC4 RTT,nom RTT(WR)
8,192
BC4
SW1 SW2
OTF
3 I/O gating DM
DM mask logic
(1, 2) DQS, DQS#
Bank
A[14:0] Address control
BA[2:0] 18
register logic
3
VDDQ/2
256
WRITE
(x32)
32 4 drivers
Data RTT,nom RTT(WR)
interface and
Data input
Column SW1 SW2
decoder logic

Column- 8 DM
11 address
counter/
3
latch
Columns 0, 1, and 2

CK,CK# Column 2
(select upper or
lower nibble for BC4)

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 2Gb: x4, x8, x16 DDR3L SDRAM
Functional Block Diagrams

Figure 4: 256 Meg x 8 Functional Block Diagram

ODT
ODT
control

ZQ
ZQ CAL To ODT/output drivers
RZQ RESET#
CKE Control ZQCL, ZQCS
logic
VSSQ
A12
CK, CK# VDDQ/2
BC4 (burst chop)
CS#
Columns 0, 1, and 2 RTT,nom RTT(WR)
Command

RAS# Bank 7 Bank 7

decode

OTF CK, CK#

Bank 6 Bank 6
CAS# Bank 5 Bank 5 SW1 SW2
Bank 4 Bank 4
WE# Bank 3 Bank 3
Bank 2 DLL
Bank 2
Bank 1 Bank 1 (1 . . . 8)
Refresh DQ8
15 READ
Mode registers counter
Row- Bank 0 Bank 0 FIFO 8 TDQS#
15 64 DQ[7:0]
address row- Memory and
18 MUX address array data Read
32,768 (32,768 x 128 x 64) DQS, DQS# DQ[7:0]
latch MUX drivers
15 and
decoder

VDDQ/2
Sense amplifiers
64
BC4 RTT,nom RTT(WR)
8,192
BC4
OTF SW1 SW2

3 I/O gating
DM mask logic
(1, 2) DQS/DQS#
Bank
A[14:0] Address control
BA[2:0] 18
register logic
3
VDDQ/2
(128 Write
x64) 64 8 drivers
Data RTT,nom RTT(WR)
interface and
Data input
Column
logic SW1 SW2
decoder

Column- 7 DM/TDQS
10 address
(shared pin)
counter/
3
latch
Columns 0, 1, and 2

CK, CK# Column 2

(select upper or
lower nibble for BC4)

Figure 5: 128 Meg x 16 Functional Block Diagram

ODT
ODT
control
ZQ
ZQ CAL To ODT/output drivers
RZQ RESET#
Control ZQCL, ZQCS
CKE
logic
VSSQ A12
CK, CK# VDDQ/2
BC4 (burst chop)
CS# RTT,nom RTT(WR)
Column 0, 1, and 2
Command

RAS# Bank 7 Bank 7

decode

CK, CK#
OTF Bank 6 Bank 6
Bank 5 SW1 SW2
CAS# Bank 5
Bank 4 Bank 4
WE# Bank 3 Bank 3
Bank 2 DLL
Bank 2
Bank 1 Bank 1 (1 . . . 16)
Refresh
13 READ
Mode registers counter
Row- Bank 0 Bank 0 FIFO 16
14 128 DQ[15:0]
address row- memory and
17 MUX address array data READ
16,384 DQ[15:0]
latch (16,384 x 128 x 128) MUX drivers LDQS, LDQS#, UDQS, UDQS#
14 and
decoder
VDDQ/2
Sense amplifiers
128 BC4 RTT,nom RTT(WR)
16,384
BC4 SW1 SW2
OTF LDQS, LDQS#
3 I/O gating
DM mask logic
Bank UDQS, UDQS#
(1 . . . 4)
A[13:0] Address control
BA[2:0] 17
register logic
3 VDDQ/2
(128
x128) WRITE
128 Data 16 drivers RTT,nom RTT(WR)
interface and
Column Data input SW2
SW1
decoder logic

Column- 7 LDM/UDM
10 address (1, 2)
counter/
3
latch Columns 0, 1, and 2

CK, CK# Column 2

(select upper or
lower nibble for BC4)

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 2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions

Ball Assignments and Descriptions

Figure 6: 78-Ball FBGA – x4, x8 Ball Assignments (Top View)

1 2 3 4 5 6 7 8 9

A
VSS VDD NC NF, NF/TDQS# VSS VDD

B
VSS VSSQ DQ0 DM, DM/TDQS VSSQ VDDQ

C
VDDQ DQ2 DQS DQ1 DQ3 VSSQ

D
VSSQ NF, DQ6 DQS# VDD VSS VSSQ

E
VREFDQ VDDQ NF, DQ4 NF, DQ7 NF, DQ5 VDDQ

F
NC VSS RAS# CK VSS NC

G
ODT VDD CAS# CK# VDD CKE

H
NC CS# WE# A10/AP ZQ NC

J
VSS BA0 BA2 NC VREFCA VSS

K
VDD A3 A0 A12/BC# BA1 VDD

L
VSS A5 A2 A1 A4 VSS

M
VDD A7 A9 A11 A6 VDD

N
VSS RESET# A13 A14 A8 VSS

Notes: 1. Ball descriptions listed in Table 3 (page 20) are listed as “x4, x8” if unique; otherwise,
x4 and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example: D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies
to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are de-
fined in Table 3).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions

Figure 7: 96-Ball FBGA – x16 Ball Assignments (Top View)

1 2 3 4 5 6 7 8 9

A
VDDQ DQ13 DQ15 DQ12 VDDQ VSS

B
VSSQ VDD VSS VSSQ
UDQS# DQ14

C
VDDQ DQ11 DQ9 UDQS DQ10 VDDQ

D
VSSQ VDDQ UDM DQ8 VSSQ VDD

E
VSS VSSQ DQ0 LDM VSSQ VDDQ

F
VDDQ DQ2 LDQS DQ1 DQ3 VSSQ

G
VSSQ DQ6 LDQS# VDD VSS VSSQ

H
VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ

J
NC VSS RAS# CK VSS NC

K
ODT VDD CAS# CK# VDD CKE

L
NC CS# WE# A10/AP ZQ NC

M
VSS BA0 BA2 NC VREFCA VSS

N
VDD A3 A0 A12/BC# BA1 VDD

P
VSS A5 A2 A1 A4 VSS

R
VDD A7 A9 A11 A6 VDD

T
VSS RESET# A13 NC A8 VSS

Notes: 1. Ball descriptions listed in Table 4 (page 22) are listed as “x16.”
2. A comma separates the configuration; a slash defines a selectable function.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions

Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions

Symbol Type Description

A[14:13], Input Address inputs: Provide the row address for ACTIVATE commands, and the column ad-
A12/BC#, A11, dress and auto precharge bit (A10) for READ/WRITE commands, to select one location out
A10/AP, of the memory array in the respective bank. A10 sampled during a PRECHARGE com-
A[9:0] mand determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected
by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a
LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled
in the mode register (MR), A12 is sampled during READ and WRITE commands to deter-
mine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop,
LOW = BC4 burst chop). See Truth Table - Command.
BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or
PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to
VREFCA.
CK, CK# Input Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#. Out-
put data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal cir-
cuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is depend-
ent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW pro-
vides PRECHARGE power-down and SELF REFRESH operations (all banks idle) or active
power-down (row active in any bank). CKE is synchronous for power-down entry and exit
and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (exclud-
ing CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (ex-
cluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to
VREFCA.
CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command
decoder. All commands are masked when CS# is registered HIGH. CS# provides for exter-
nal rank selection on systems with multiple ranks. CS# is considered part of the command
code. CS# is referenced to VREFCA.
DM Input Input data mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH along with the input data during a write access. Although the DM
ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM
is referenced to VREFDQ. DM has an optional use as TDQS on the x8 device.
ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) ter-
mination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the
x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the
LOAD MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being
entered and are referenced to VREFCA.
RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver
is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDDQ and DC LOW ≤
0.2 × VDDQ. RESET# assertion and deassertion are asynchronous.
DQ[3:0] I/O Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are refer-
enced to VREFDQ.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions

Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued)

Symbol Type Description

DQ[7:0] I/O Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are refer-
enced to VREFDQ.
DQS, DQS# I/O Data strobe: Output with read data. Edge-aligned with read data. Input with write da-
ta. Center-aligned to write data.
TDQS, TDQS# I/O Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled,
DM is disabled, and the TDQS and TDQS# balls provide termination resistance.
VDD Supply Power supply: 1.35V, 1.283–1.45V operational; compatible to 1.5V operation.
VDDQ Supply DQ power supply: 1.35V, 1.283–1.45V operational; compatible with 1.5V operation.
VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained
at all times (including self refresh) for proper device operation.
VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (including self re-
fresh) for proper device operation.
VSS Supply Ground.
VSSQ Supply DQ ground: Isolated on the device for improved noise immunity.
ZQ Reference External reference ball for output drive calibration: This ball is tied to an external
240Ω resistor (RZQ), which is tied to VSSQ.
NC – No connect: These balls should be left unconnected (the ball has no connection to the
DRAM or to other balls).
NF – No function: When configured as a x4 device, these balls are NF. When configured as a
x8 device, these balls are defined as TDQS#, DQ[7:4].

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 2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions

Table 4: 96-Ball FBGA – x16 Ball Descriptions

Symbol Type Description

A13, A12/BC#, Input Address inputs: Provide the row address for ACTIVATE commands, and the column ad-
A11, A10/AP, dress and auto precharge bit (A10) for READ/WRITE commands, to select one location out
A[9:0] of the memory array in the respective bank. A10 sampled during a PRECHARGE com-
mand determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected
by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a
LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled
in the mode register (MR), A12 is sampled during READ and WRITE commands to deter-
mine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop,
LOW = BC4 burst chop). See Truth Table - Command.
BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or
PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to
VREFCA.
CK, CK# Input Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#. Out-
put data strobe (LDQS, LDQS#, UDQS, UDQS#) is referenced to the crossings of CK and
CK#.
CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal cir-
cuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is depend-
ent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW pro-
vides PRECHARGE power-down and SELF REFRESH operations (all banks idle) or active
power-down (row active in any bank). CKE is synchronous for power-down entry and exit
and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (exclud-
ing CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (ex-
cluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to
VREFCA.
CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command
decoder. All commands are masked when CS# is registered HIGH. CS# provides for exter-
nal rank selection on systems with multiple ranks. CS# is considered part of the command
code. CS# is referenced to VREFCA.
LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte in-
put data is masked when LDM is sampled HIGH along with the input data during a write
access. Although the LDM ball is input-only, the LDM loading is designed to match that
of the DQ and LDQS balls. LDM is referenced to VREFDQ.
ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) ter-
mination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS,
UDQS#, LDM, and UDM for the x16. The ODT input is ignored if disabled via the LOAD
MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being
entered and are referenced to VREFCA.
RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver
is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDDQ and DC LOW ≤
0.2 × VDDQ. RESET# assertion and deassertion are asynchronous.

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© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions

Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued)

Symbol Type Description

UDM Input Input data mask: UDM is an upper-byte, input mask signal for write data. Upper-byte
input data is masked when UDM is sampled HIGH along with the input data during a
write access. Although the UDM ball is input-only, the UDM loading is designed to match
that of the DQ and UDQS balls. UDM is referenced to VREFDQ.
DQ[7:0] I/O Data input/output: Lower byte of bidirectional data bus for the x16 configuration.
DQ[7:0] are referenced to VREFDQ.
DQ[15:8] I/O Data input/output: Upper byte of bidirectional data bus for the x16 configuration.
DQ[15:8] are referenced to VREFDQ.
LDQS, LDQS# I/O Lower byte data strobe: Output with read data. Edge-aligned with read data. Input
with write data. LDQS is center-aligned to write data.
UDQS, UDQS# I/O Upper byte data strobe: Output with read data. Edge-aligned with read data. Input
with write data. UDQS is center-aligned to write data.
VDD Supply Power supply: 1.35V, 1.283–1.45V operational; compatible to 1.5V operation.
VDDQ Supply DQ power supply: 1.35V, 1.283–1.45V operational; compatible with 1.5V operation.
VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained
at all times (including self refresh) for proper device operation.
VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (including self re-
fresh) for proper device operation.
VSS Supply Ground.
VSSQ Supply DQ ground: Isolated on the device for improved noise immunity.
ZQ Reference External reference ball for output drive calibration: This ball is tied to an external
240Ω resistor (RZQ), which is tied to VSSQ.
NC – No connect: These balls should be left unconnected (the ball has no connection to the
DRAM or to other balls).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions

Package Dimensions

Figure 8: 78-Ball FBGA – x4, x8 (DA)

0.155

Seating plane

1.8 CTR
A 0.12 A
78X Ø0.45 Nonconductive
Dimensions apply overmold
to solder balls post-
reflow on Ø0.35 SMD Ball A1 ID Ball A1 ID
ball pads. 9 8 7 3 2 1
A
B
C
D
E
10.5 ±0.1 F
9.6 CTR G
H
J
K
L
M
0.8 TYP
N

0.8 TYP 1.1 ±0.1

6.4 CTR 0.25 MIN
8 ±0.1
Notes: 1. All dimensions are in millimeters.
2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions

Figure 9: 96-Ball FBGA – x16 (JT)

0.155

Seating plane

A 0.12 A
1.8 CTR
Nonconductive
overmold

96X Ø0.45
Dimensions apply
to solder balls post- Ball A1 ID Ball A1 ID
reflow on Ø0.35
SMD ball pads. 9 8 7 3 2 1

F
14 ±0.1
G

H
12 CTR
J

R
0.8 TYP
T

0.8 TYP 1.1 ±0.1

6.4 CTR 0.25 MIN

8 ±0.1

Notes: 1. All dimensions are in millimeters.

2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Electrical Specifications

Table 5: Input/Output Capacitance

Capacitance DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866

Parameters Symbol Min Max Min Max Min Max Min Max Min Max Units
Single-end I/O: DQ, DM CIO 1.5 2.5 1.5 2.5 1.5 2.3 1.5 2.2 1.5 2.1 pF
Differential I/O: DQS, CIO 1.5 2.5 1.5 2.5 1.5 2.3 1.5 2.2 1.5 2.1 pF
DQS#, TDQS, TDQS#
Inputs (CTRL, CI 0.75 1.3 0.75 1.3 0.75 1.3 0.75 1.2 0.75 1.2 pF
CMD,ADDR)

Table 6: DC Electrical Characteristics and Operating Conditions – 1.35V Operation

All voltages are referenced to VSS
Parameter/Condition Symbol Min Nom Max Units Notes
Supply voltage VDD 1.283 1.35 1.45 V 1, 2, 3, 4
I/O supply voltage VDDQ 1.283 1.35 1.45 V 1, 2, 3, 4

Notes: 1. Maximum DC value may not be greater than 1.425V. The DC value is the linear average
of VDD/VDDQ(t) over a very long period of time (for example, 1 sec).
2. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
3. Under these supply voltages, the device operates to this DDR3L specification.
4. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is
in reset while VDD and VDDQ are changed for DDR3 operation (see Figure 47 (page 141)).

Table 7: DC Electrical Characteristics and Operating Conditions – 1.5V Operation

All voltages are referenced to VSS
Parameter/Condition Symbol Min Nom Max Units Notes
Supply voltage VDD 1.425 1.5 1.575 V 1, 2, 3
I/O supply voltage VDDQ 1.425 1.5 1.575 V 1, 2, 3

Notes: 1. If the minimum limit is exceeded, input levels shall be governed by DDR3L specifications.
2. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifi-
cations under the same speed timings as defined for this device.
3. Once initialized for DDR3 operation, DDR3L operation may only be used if the device is
in reset while VDD and VDDQ are changed for DDR3L operation (see Figure 47 (page
141)).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 8: Input Switching Conditions – Command and Address

Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 DDR3L-1866 Units

Input high AC voltage: Logic 1 VIH(AC160)min 1 160 160 – mV
Input high AC voltage: Logic 1 VIH(AC135)min 1 135 135 135 mV
Input high AC voltage: Logic 1 VIH(AC125)min1 – – 125 mV
Input high DC voltage: Logic 1 VIH(DC90)min 90 90 90 mV
Input low DC voltage: Logic 0 VIL(DC90)min –90 –90 –90 mV
Input low AC voltage: Logic 0 VIL(AC125)min 1 – – –125 mV
Input low AC voltage: Logic 0 VIL(AC135)min1 –135 –135 –135 mV
Input low AC voltage: Logic 0 VIL(AC160)min 1 –160 –160 – mV

Note: 1. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3L-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDRL-800, the address/
command inputs must use either VIH(AC160),min with tIS(AC160) of 215ps or VIH(AC135),min
with tIS(AC135) of 365ps; independently, the data inputs may use either VIH(AC160),min or
VIH(AC135),min.

Table 9: Input Switching Conditions – DQ and DM

Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 DDR3L-1866 Units

Input high AC voltage: Logic 1 VIH(AC160)min 1 160 160 – mV
Input high AC voltage: Logic 1 VIH(AC135)min1 135 135 135 mV
Input high AC voltage: Logic 1 VIH(AC130)min 1 – – 130 mV
Input high DC voltage: Logic 1 VIH(DC90)min 90 90 90 mV
Input low DC voltage: Logic 0 VIL(DC90)min –90 –90 –90 mV
Input low AC voltage: Logic 0 VIL(AC130)min1 – – –130 mV
Input low AC voltage: Logic 0 VIL(AC135)min1 –135 –135 –135 mV
Input low AC voltage: Logic 0 VIL(AC160)min 1 –160 –160 – mV

Note: 1. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3L-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDRL-800, the data in-
puts must use either VIH(AC160),min with tIS(AC160) of 90ps or VIH(AC135),min with tIS(AC135)
of 140ps; independently, the address/command inputs may use either VIH(AC160),min or
VIH(AC135),min.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 10: Differential Input Operating Conditions (CK, CK# and DQS, DQS#)

Parameter/Condition Symbol Min Max Units

Differential input logic high – slew VIH,diff(AC)slew 180 N/A mV
Differential input logic low – slew VIL,diff(AC)slew N/A –180 mV
Differential input logic high VIH,diff(AC) 2 × (VIH(AC) - VREF) VDD/VDDQ mV
Differential input logic low VIL,diff(AC) VSS/VSSQ 2 × (VIL(AC) - VREF) mV
Single-ended high level for strobes VSEH VDDQ/2 + 160 VDDQ mV
Single-ended high level for CK, CK# VDD/2 + 160 VDD mV
Single-ended low level for strobes VSEL VSSQ VDDQ/2 - 160 mV
Single-ended low level for CK, CK# VSS VDD/2 - 160 mV

Table 11: Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback

DDR3L-800/1066/1333/1600 DDR3L-1866
tDVAC at tDVAC at tDVACat tDVACat tDVACat
Slew Rate (V/ns) 320mV (ps) 270mV (ps) 270mV (ps) 250mV (ps) 260mV (ps)
>4.0 189 201 163 168 176
4.0 189 201 163 168 176
3.0 162 179 140 147 154
2.0 109 134 95 105 111
1.8 91 119 80 91 97
1.6 69 100 62 74 78
1.4 40 76 37 52 55
1.2 Note1 44 5 22 24
1.0 Note1 Note1 Note1 Note1 Note1
<1.0 Note1 Note1 Note1 Note1 Note1

Note: 1. Rising input signal shall become equal to or greater than VIH(ac) level and Falling input
signal shall become equal to or less than VIL(ac) level.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 12: RTT Effective Impedance

Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
MR1
[9, 6, 2] RTT Resistor VOUT Min Nom Max Units
0, 1, 0 120Ω RTT,120PD240 0.2 × VDDQ 0.6 1.0 1.15 RZQ/1
0.5 × VDDQ 0.9 1.0 1.15 RZQ/1
0.8 × VDDQ 0.9 1.0 1.45 RZQ/1
RTT,120PU240 0.2 × VDDQ 0.9 1.0 1.45 RZQ/1
0.5 × VDDQ 0.9 1.0 1.15 RZQ/1
0.8 × VDDQ 0.6 1.0 1.15 RZQ/1
120Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/2
0, 0, 1 60Ω RTT,60PD120 0.2 × VDDQ 0.6 1.0 1.15 RZQ/2
0.5 × VDDQ 0.9 1.0 1.15 RZQ/2
0.8 × VDDQ 0.9 1.0 1.45 RZQ/2
RTT,60PU120 0.2 × VDDQ 0.9 1.0 1.45 RZQ/2
0.5 × VDDQ 0.9 1.0 1.15 RZQ/2
0.8 × VDDQ 0.6 1.0 1.15 RZQ/2
60Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/4
0, 1, 1 40Ω RTT,40PD80 0.2 × VDDQ 0.6 1.0 1.15 RZQ/3
0.5 × VDDQ 0.9 1.0 1.15 RZQ/3
0.8 × VDDQ 0.9 1.0 1.45 RZQ/3
RTT,40PU80 0.2 × VDDQ 0.9 1.0 1.45 RZQ/3
0.5 × VDDQ 0.9 1.0 1.15 RZQ/3
0.8 × VDDQ 0.6 1.0 1.15 RZQ/3
40Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/6
1, 0, 1 30Ω RTT,30PD60 0.2 × VDDQ 0.6 1.0 1.15 RZQ/4
0.5 × VDDQ 0.9 1.0 1.15 RZQ/4
0.8 × VDDQ 0.9 1.0 1.45 RZQ/4
RTT,30PU60 0.2 × VDDQ 0.9 1.0 1.45 RZQ/4
0.5 × VDDQ 0.9 1.0 1.15 RZQ/4
0.8 × VDDQ 0.6 1.0 1.15 RZQ/4
30Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/8
1, 0, 0 20Ω RTT,20PD40 0.2 × VDDQ 0.6 1.0 1.15 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.9 1.0 1.45 RZQ/6
RTT,20PU40 0.2 × VDDQ 0.9 1.0 1.45 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.6 1.0 1.15 RZQ/6
20Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/12

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 13: Reference Settings for ODT Timing Measurements

Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
Measured
Parameter RTT,nom Setting RTT(WR) Setting VSW1 VSW2
tAON RZQ/4 (60Ω) N/A 50mV 100mv
RZQ/12 (20Ω) N/A 100mV 200mV
tAOF RZQ/4 (60Ω) N/A 50mV 100mv
RZQ/12 (20Ω) N/A 100mV 200mV
tAONPD RZQ/4 (60Ω) N/A 50mV 100mv
RZQ/12 (20Ω) N/A 100mV 200mV
tAOFPD RZQ/4 (60Ω) N/A 50mV 100mv
RZQ/12 (20Ω) N/A 100mV 200mV
tADC RZQ/12 (20Ω) RZQ/2 (20Ω) 200mV 250mV

Table 14: 34Ω Driver Impedance Characteristics

Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
MR1
[5, 1] RON Resistor VOUT Min Nom Max1 Units
0, 1 34.3Ω RON,34PD 0.2 × VDDQ 0.6 1.0 1.15 RZQ/7
0.5 × VDDQ 0.9 1.0 1.15 RZQ/7
0.8 × VDDQ 0.9 1.0 1.45 RZQ/7
RON,34PU 0.2 × VDDQ 0.9 1.0 1.45 RZQ/7
0.5 × VDDQ 0.9 1.0 1.15 RZQ/7
0.8 × VDDQ 0.6 1.0 1.15 RZQ/7
Pull-up/pull-down mismatch (MMPUPD) VIL(AC) to VIH(AC) –10 N/A 10 %

Note: 1. A larger maximum limit will result in slightly lower minimum currents.

Table 15: 40Ω Driver Impedance Characteristics

Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
MR1
[5, 1] RON Resistor VOUT Min Nom Max1 Units
0, 0 40Ω RON,40PD 0.2 × VDDQ 0.6 1.0 1.15 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.9 1.0 1.45 RZQ/6
RON,40PU 0.2 × VDDQ 0.9 1.0 1.45 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.6 1.0 1.15 RZQ/6
Pull-up/pull-down mismatch (MMPUPD) VIL(AC) to VIH(AC) –10 N/A 10 %

Note: 1. A larger maximum limit will result in slightly lower minimum currents.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 16: Single-Ended Output Driver Characteristics

Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
Parameter/Condition Symbol Min Max Units
Output slew rate: Single-ended; For rising and falling SRQse 1.75 6 V/ns
edges, measure between VOL(AC) = VREF - 0.09 × VDDQ
and VOH(AC) = VREF + 0.09 × VDDQ

Table 17: Differential Output Driver Characteristics

Gray-shaded cells have the same values as those in the 1.5V DDR3 data sheet
Parameter/Condition Symbol Min Max Units
Output slew rate: Differential; For rising and falling SRQdiff 3.5 12 V/ns
edges, measure between VOL,diff(AC) = –0.18 × VDDQ and
VOH,diff(AC) = 0.18 × VDDQ
Output differential crosspoint voltage VOX(AC) VREF - 135 VREF + 135 mV

Table 18: Electrical Characteristics and AC Operating Conditions

Note 1 applies to base timing specifications
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866
Parameter Symbol Min Max Min Max Min Max Min Max Min Max Units
DQ Input Timing
Data setup Base tDS 90 – 40 – N/A – N/A – N/A – ps
time to DQS, (specification) (AC160)
DQS# VREF @ 1 V/ns 250 – 200 – N/A – N/A – N/A – ps
Data setup Base tDS 140 – 90 – 45 – 25 – N/A – ps
time to DQS, (specification) (AC135)
DQS# VREF @ 1 V/ns 275 – 225 – 180 – 160 – N/A – ps
Data hold Base tDH 160 – 110 – 75 – 55 – N/A – ps
time from (specification) (DC90)
DQS, DQS# VREF @ 1 V/ns 250 – 200 – 165 – 145 – N/A – ps
Data setup Base tDS N/A – N/A – N/A – N/A – 70 – ps
time to DQS, (specification) (AC130)
DQS# VREF @ 2 V/ns N/A – N/A – N/A – N/A – 135 – ps
Data hold Base tDH N/A – N/A – N/A – N/A – 75 – ps
time from (specification) (DC90)
DQS, DQS# VREF @ 2 V/ns N/A – N/A – N/A – N/A – 110 – ps
Command and Address Timing
CTRL, CMD, Base tIS 215 – 140 – 80 – 60 – N/A – ps
ADDR setup (specification) (AC160)
to CK, CK# VREF @ 1 V/ns 375 – 300 – 240 – 220 – N/A – ps

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 18: Electrical Characteristics and AC Operating Conditions (Continued)

Note 1 applies to base timing specifications
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866
Parameter Symbol Min Max Min Max Min Max Min Max Min Max Units
CTRL, CMD, Base tIS 365 – 290 – 205 – 185 – 65 – ps
ADDR setup (specification) (AC135)
to CK, CK# VREF @ 1 V/ns 500 – 425 – 340 – 320 – 200 – ps
CTRL, CMD, Base tIS N/A – N/A – N/A – N/A – 150 – ps
ADDR setup (specification) (AC125)
to CK, CK# VREF @ 1 V/ns N/A – N/A – N/A – N/A – 275 – ps
CTRL, CMD, Base tIH 285 – 210 – 150 – 130 – 110 – ps
ADDR hold (specification) (DC90)
from CK, CK# V
REF @ 1 V/ns 375 – 300 – 240 – 220 – 200 – ps

Notes: 1. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/
command inputs must use either VIH(AC160),min with tIS(AC160) of 215ps or VIH(AC135),min
with tIS(AC135) of 365ps; independently, the data inputs must use either VIH(AC160),min
with tDS(AC160) of 90ps or VIH(AC135),min with tDS(AC135) of 140ps.
2. When DQ single-ended slew rate is 1V/ns, the DQS differential slew rate is 2V/ns; when
DQ single-ended slew rate is 2V/ns, the DQS differential slew rate is 4V/ns;

Table 19: Derating Values for tIS/tIH – AC160/DC90-Based

ΔtIS, ΔtIH Derating (ps) – AC/DC-Based

CK, CK# Differential Slew Rate
CMD/ADDR
Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
V/ns ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
2.0 80 45 80 45 80 45 88 53 96 61 104 69 112 79 120 95
1.5 53 30 53 30 53 30 61 38 69 46 77 54 85 64 93 80
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 –1 –3 –1 –3 –1 –3 7 5 15 13 23 21 31 31 39 47
0.8 –3 –8 –3 –8 –3 –8 5 1 13 9 21 17 29 27 37 43
0.7 –5 –13 –5 –13 –5 –13 3 –5 11 3 19 11 27 21 35 37
0.6 –8 –20 –8 –20 –8 –20 0 –12 8 –4 16 4 24 14 32 30
0.5 –20 –30 –20 –30 –20 –30 –12 –22 –4 –14 4 –6 12 4 20 20
0.4 –40 –45 –40 –45 –40 –45 –32 –37 –24 –29 –16 –21 –8 –11 0 5

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 20: Derating Values for tIS/tIH – AC135/DC90-Based

ΔtIS, ΔtIH Derating (ps) – AC/DC-Based

CK, CK# Differential Slew Rate
CMD/ADDR
Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
V/ns ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
2.0 68 45 68 45 68 45 76 53 84 61 92 69 100 79 108 95
1.5 45 30 45 30 45 30 53 38 61 46 69 54 77 64 85 80
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 2 –3 2 –3 2 –3 10 5 18 13 26 21 34 31 42 47
0.8 3 –8 3 –8 3 –8 11 1 19 9 27 17 35 27 43 43
0.7 6 –13 6 –13 6 –13 14 –5 22 3 30 11 38 21 46 37
0.6 9 –20 9 –20 9 –20 17 –12 25 –4 33 4 41 14 49 30
0.5 5 –30 5 –30 5 –30 13 –22 21 –14 29 –6 37 4 45 20
0.4 –3 –45 –3 –45 –3 –45 6 –37 14 –29 22 –21 30 –11 38 5

Table 21: Derating Values for tIS/tIH – AC125/DC90-Based

ΔtIS, ΔtIH Derating (ps) – AC/DC-Based

CK, CK# Differential Slew Rate
CMD/ADDR
Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
V/ns ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
2.0 63 45 63 45 63 45 71 53 79 61 87 69 95 79 103 95
1.5 42 30 42 30 42 30 50 38 58 46 66 54 74 64 82 80
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 3 –3 3 –3 3 –3 11 5 19 13 27 21 35 31 43 47
0.8 6 –8 6 –8 6 –8 14 1 22 9 30 17 38 27 46 43
0.7 10 –13 10 –13 10 –13 18 –5 26 3 34 11 42 21 50 37
0.6 16 –20 16 –20 16 –20 24 –12 32 –4 40 4 48 14 56 30
0.5 15 –30 15 –30 15 –30 23 –22 31 –14 39 –6 47 4 55 20
0.4 13 –45 13 –45 13 –45 21 –37 29 –29 37 –21 45 –11 53 5

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 22: Minimum Required Time tVAC Above VIH(AC) (Below VIL[AC]) for Valid ADD/CMD Transition

DDR3L-800/1066/1333/1600 DDR3L-1866
Slew Rate (V/ns) tVAC at 160mV (ps) tVAC at 135mV (ps) tVAC at 135mV (ps) tVAC at 125mV (ps)
>2.0 200 213 200 205
2.0 200 213 200 205
1.5 173 190 178 184
1.0 120 145 133 143
0.9 102 130 118 129
0.8 80 111 99 111
0.7 51 87 75 89
0.6 13 55 43 59
0.5 Note 1 10 Note 1 18
<0.5 Note 1 10 Note 1 18

Note: 1. Rising input signal shall become equal to or greater than VIH(AC) level and falling input
signal shall become equal to or less than VIL(AC) level.

Table 23: Derating Values for tDS/tDH – AC160/DC90-Based

ΔtDS, ΔtDH Derating (ps) – AC/DC-Based

DQS, DQS# Differential Slew Rate

DQ Slew 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Rate V/ns ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
2.0 80 45 80 45 80 45
1.5 53 30 53 30 53 30 61 38
1.0 0 0 0 0 0 0 8 8 16 16
0.9 –1 –3 –1 –3 7 5 15 13 23 21
0.8 –3 –8 5 1 13 9 21 17 29 27
0.7 –3 –5 11 3 19 11 27 21 35 37
0.6 8 –4 16 4 24 14 32 30
0.5 4 6 12 4 20 20
0.4 –8 –11 0 5

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 24: Derating Values for tDS/tDH – AC135/DC90-Based

ΔtDS, ΔtDH Derating (ps) – AC/DC-Based

DQS, DQS# Differential Slew Rate

DQ Slew 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Rate V/ns ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
2.0 68 45 68 45 68 45
1.5 45 30 45 30 45 30 53 38
1.0 0 0 0 0 0 0 8 8 16 16
0.9 2 –3 2 –3 10 5 18 13 26 21
0.8 3 –8 11 1 19 9 27 17 35 27
0.7 14 –5 22 3 30 11 38 21 46 37
0.6 25 –4 33 4 41 14 49 30
0.5 39 –6 37 4 45 20
0.4 30 –11 38 5

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CCMTD-1725822587-7895

Table 25: Derating Values for tDS/tDH – AC130/DC100-Based at 2V/ns

Shaded cells indicate slew rate combinations not supported
ΔtDS, ΔtDH Derating (ps) – AC/DC-Based
DQS, DQS# Differential Slew Rate
DQ Slew Rate V/ns

8.0 V/ns 7.0 V/ns 6.0 V/ns 5.0 V/ns 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns

Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH

4.0 33 23 33 23 33 23
3.5 28 19 28 19 28 19 28 19
3.0 22 15 22 15 22 15 22 15 22 15
2.5 13 9 13 9 13 9 13 9 13 9
2.0 0 0 0 0 0 0 0 0 0 0
1.5 –22 –15 –22 –15 –22 –15 –22 –15 –14 –7
1.0 –65 –45 –65 –45 –65 –45 –57 –37 –49 –29
0.9 –62 –48 –62 –48 –54 –40 –46 –32 –38 –24
36

0.8 –61 –53 –53 –45 –45 –37 –37 –29 –29 –19
0.7 –49 –50 –41 -42 –33 –34 –25 –24 –17 –8
0.6 –37 -49 –29 –41 –21 –31 –13 –15
Micron Technology, Inc. reserves the right to change products or specifications without notice.

0.5 –31 –51 –23 –41 –15 –25

0.4 –28 –56 –20 –40

2Gb: x4, x8, x16 DDR3L SDRAM

Electrical Specifications
© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications

Table 26: Minimum Required Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition

Slew Rate (V/ns) tVAC at 160mV (ps) tVAC at 135mV (ps) tVAC at 130mV (ps)
>2.0 165 113 95
2.0 165 113 95
1.5 138 90 73
1.0 85 45 30
0.9 67 30 16
0.8 45 11 Note1
0.7 16 Note1 –
0.6 Note1 Note1 –
0.5 Note1 Note1 –
<0.5 Note1 Note1 –

Note: 1. Rising input signal shall become equal to or greater than VIH(AC) level and falling input
signal shall become equal to or less than VIL(AC) level.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Thermal Characteristics

Thermal Characteristics

Table 27: Thermal Characteristics

Parameter/Condition Value Unit Symbol Notes

Operating case temperature – 0 to +85 °C TC 1, 2, 3
Commercial 0 to +95 °C TC 1, 2, 3, 4
Operating case temperature – –40 to +85 °C TC 1, 2, 3
Industrial –40 to +95 °C TC 1, 2, 3, 4

Notes: 1. Maximum operating case temperature. TC is measured in the center of the package.
2. A thermal solution must be designed to ensure the DRAM device does not exceed TC
MAX during operation.
3. Device functionality is not guaranteed if the DRAM device exceeds TC MAX during oper-
ation.
4. If TC exceeds 85°C, the DRAM must be refreshed manually at 2x refresh, which is a 3.9µs
interval refresh rate. The use of SRT or ASR must be enabled.
5. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Thermal Characteristics

Table 28: Thermal Impedance

Θ JA (°C/W) Θ JA (°C/W) Θ JA (°C/W)

Airflow = Airflow = Airflow =
Die Rev. Package Substrate 0m/s 1m/s 2m/s Θ JB (°C/W) Θ JC (°C/W)
Low conduc-
70.4 56.5 50.8 N/A 6.5
tivity
78-ball
High con-
49.2 42.4 39.3 36.1 N/A
ductivity
K
Low conduc-
65.3 52.4 47.1 N/A 6.5
tivity
96-ball
High con-
46.4 40.0 37.2 34.8 N/A
ductivity

Note: 1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.

Figure 10: Thermal Measurement Point

(L/2)
Tc test point

(W/2)

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Electrical Specifications – IDD Specifications and Conditions

Within the following IDD measurement tables, the following definitions and conditions
are used, unless stated otherwise:
• LOW: V IN ≤ V IL(AC)max; HIGH: V IN ≥ V IH(AC)min.
• Midlevel: Inputs are V REF = V DD/2.
• RON set to RZQ/7 (34Ω).
• RTT,nom set to RZQ/6 (40Ω).
• RTT(WR) set to RZQ/2 (120Ω).
• QOFF is enabled in MR1.
• ODT is enabled in MR1 (RTT,nom) and MR2 (RTT(WR)).
• TDQS is disabled in MR1.
• External DQ/DQS/DM load resistor is 25Ω to V DDQ/2.
• Burst lengths are BL8 fixed.
• AL equals 0 (except in IDD7).
• IDD specifications are tested after the device is properly initialized.
• Input slew rate is specified by AC parametric test conditions.
• ASR is disabled.
• Read burst type uses nibble sequential (MR0[3] = 0).
• Loop patterns must be executed at least once before current measurements begin.

Table 29: DDR3L Timing Parameters Used for IDD Measurements – Clock Units

DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866

IDD -25E -25 -187E -187 -15E -15 -125E -125 -107
Parameter 5-5-5 6-6-6 7-7-7 8-8-8 9-9-9 10-10-10 10-10-10 11-11-11 13-13-13 Unit
tCK (MIN) IDD 2.5 1.875 1.5 1.25 1.07 ns
CL IDD 5 6 7 8 9 10 10 11 13 CK
tRCD (MIN) IDD 5 6 7 8 9 10 10 11 13 CK
tRC (MIN) IDD 20 21 27 28 33 34 38 39 45 CK
tRAS (MIN) IDD 15 15 20 20 24 24 28 28 32 CK
tRP (MIN) 5 6 7 8 9 10 10 11 13 CK
tFAW x4, x8 16 16 20 20 20 20 24 24 26 CK
x16 20 20 27 27 30 30 32 32 33 CK
tRRD x4, x8 4 4 4 4 4 4 5 5 5 CK
IDD x16 4 4 6 6 5 5 6 6 6 CK
tRFC 1Gb 44 44 59 59 74 74 88 88 103 CK
2Gb 64 64 86 86 107 107 128 128 150 CK
4Gb 104 104 139 139 174 174 208 208 243 CK
8Gb 140 140 187 187 234 234 280 280 328 CK

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 30: DDR3L IDD0 Measurement Loop

Command

A[15:11]
Number
CK, CK#

BA[2:0]

A[9:7]

A[6:3]

A[2:0]
A[10]
RAS#

CAS#
Loop

Data
WE#

ODT
CKE
Sub-

CS#
Cycle

0 ACT 0 0 1 1 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
2 D 1 0 0 0 0 0 0 0 0 0 0 –
3 D# 1 1 1 1 0 0 0 0 0 0 0 –
4 D# 1 1 1 1 0 0 0 0 0 0 0 –
Repeat cycles 1 through 4 until nRAS - 1; truncate if needed
nRAS PRE 0 0 1 0 0 0 0 0 0 0 0 –
Repeat cycles 1 through 4 until nRC - 1; truncate if needed
0
nRC ACT 0 0 1 1 0 0 0 0 0 F 0 –
nRC + 1 D 1 0 0 0 0 0 0 0 0 F 0 –
Static HIGH

nRC + 2 D 1 0 0 0 0 0 0 0 0 F 0 –
Toggling

nRC + 3 D# 1 1 1 1 0 0 0 0 0 F 0 –
nRC + 4 D# 1 1 1 1 0 0 0 0 0 F 0 –
Repeat cycles nRC + 1 through nRC + 4 until nRC - 1 + nRAS -1; truncate if needed
nRC + nRAS PRE 0 0 1 0 0 0 0 0 0 F 0 –
Repeat cycles nRC + 1 through nRC + 4 until 2 × RC - 1; truncate if needed
1 2 × nRC Repeat sub-loop 0, use BA[2:0] = 1
2 4 × nRC Repeat sub-loop 0, use BA[2:0] = 2
3 6 × nRC Repeat sub-loop 0, use BA[2:0] = 3
4 8 × nRC Repeat sub-loop 0, use BA[2:0] = 4
5 10 × nRC Repeat sub-loop 0, use BA[2:0] = 5
6 12 × nRC Repeat sub-loop 0, use BA[2:0] = 6
7 14 × nRC Repeat sub-loop 0, use BA[2:0] = 7

Notes: 1. DQ, DQS, DQS# are midlevel.

2. DM is LOW.
3. Only selected bank (single) active.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 31: DDR3L IDD1 Measurement Loop

Command
Sub-Loop

A[15:11]
Number
CK, CK#

BA[2:0]

A[9:7]

A[6:3]

A[2:0]

Data2
A[10]
RAS#

CAS#

WE#

ODT
CKE

CS#
Cycle

0 ACT 0 0 1 1 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
2 D 1 0 0 0 0 0 0 0 0 0 0 –
3 D# 1 1 1 1 0 0 0 0 0 0 0 –
4 D# 1 1 1 1 0 0 0 0 0 0 0 –
Repeat cycles 1 through 4 until nRCD - 1; truncate if needed
nRCD RD 0 1 0 1 0 0 0 0 0 0 0 00000000
Repeat cycles 1 through 4 until nRAS - 1; truncate if needed
nRAS PRE 0 0 1 0 0 0 0 0 0 0 0 –
Repeat cycles 1 through 4 until nRC - 1; truncate if needed
0
nRC ACT 0 0 1 1 0 0 0 0 0 F 0 –
nRC + 1 D 1 0 0 0 0 0 0 0 0 F 0 –
Static HIGH

nRC + 2 D 1 0 0 0 0 0 0 0 0 F 0 –
Toggling

nRC + 3 D# 1 1 1 1 0 0 0 0 0 F 0 –
nRC + 4 D# 1 1 1 1 0 0 0 0 0 F 0 –
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRCD - 1; truncate if needed
nRC + nRCD RD 0 1 0 1 0 0 0 0 0 F 0 00110011
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRAS - 1; truncate if needed
nRC + nRAS PRE 0 0 1 0 0 0 0 0 0 F 0 –
Repeat cycle nRC + 1 through nRC + 4 until 2 × nRC - 1; truncate if needed
1 2 × nRC Repeat sub-loop 0, use BA[2:0] = 1
2 4 × nRC Repeat sub-loop 0, use BA[2:0] = 2
3 6 × nRC Repeat sub-loop 0, use BA[2:0] = 3
4 8 × nRC Repeat sub-loop 0, use BA[2:0] = 4
5 10 × nRC Repeat sub-loop 0, use BA[2:0] = 5
6 12 × nRC Repeat sub-loop 0, use BA[2:0] = 6
7 14 × nRC Repeat sub-loop 0, use BA[2:0] = 7

Notes: 1. DQ, DQS, DQS# are midlevel unless driven as required by the RD command.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the RD command.
4. Only selected bank (single) active.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 32: DDR3L IDD Measurement Conditions for Power-Down Currents

IDD2P0 Precharge IDD2P1 Precharge IDD2Q Precharge IDD3P Active

Power-Down Power-Down Quiet Power-Down
Name Current (Slow Exit)1 Current (Fast Exit)1 Standby Current Current
Timing pattern N/A N/A N/A N/A
CKE LOW LOW HIGH LOW
External clock Toggling Toggling Toggling Toggling
tCK tCK (MIN) IDD tCK (MIN) IDD tCK (MIN) IDD tCK (MIN) IDD
tRC N/A N/A N/A N/A
tRAS N/A N/A N/A N/A
tRCD N/A N/A N/A N/A
tRRD N/A N/A N/A N/A
tRC N/A N/A N/A N/A
CL N/A N/A N/A N/A
AL N/A N/A N/A N/A
CS# HIGH HIGH HIGH HIGH
Command inputs LOW LOW LOW LOW
Row/column addr LOW LOW LOW LOW
Bank addresses LOW LOW LOW LOW
DM LOW LOW LOW LOW
Data I/O Midlevel Midlevel Midlevel Midlevel
Output buffer DQ, DQS Enabled Enabled Enabled Enabled
ODT2 Enabled, off Enabled, off Enabled, off Enabled, off
Burst length 8 8 8 8
Active banks None None None All
Idle banks All All All None
Special notes N/A N/A N/A N/A

Notes: 1. MR0[12] defines DLL on/off behavior during precharge power-down only; DLL on (fast
exit, MR0[12] = 1) and DLL off (slow exit, MR0[12] = 0).
2. “Enabled, off” means the MR bits are enabled, but the signal is LOW.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 33: DDR3L IDD2N and IDD3N Measurement Loop

Command
Sub-Loop

A[15:11]
Number
CK, CK#

BA[2:0]

A[9:7]

A[6:3]

A[2:0]
A[10]
RAS#

CAS#

Data
WE#

ODT
CKE

CS#
Cycle

0 D 1 0 0 0 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
0
2 D# 1 1 1 1 0 0 0 0 0 F 0 –
3 D# 1 1 1 1 0 0 0 0 0 F 0 –
Static HIGH

1 4–7 Repeat sub-loop 0, use BA[2:0] = 1

Toggling

2 8–11 Repeat sub-loop 0, use BA[2:0] = 2

3 12–15 Repeat sub-loop 0, use BA[2:0] = 3
4 16–19 Repeat sub-loop 0, use BA[2:0] = 4
5 20–23 Repeat sub-loop 0, use BA[2:0] = 5
6 24–27 Repeat sub-loop 0, use BA[2:0] = 6
7 28–31 Repeat sub-loop 0, use BA[2:0] = 7

Notes: 1. DQ, DQS, DQS# are midlevel.

2. DM is LOW.
3. All banks closed during IDD2N; all banks open during IDD3N.

Table 34: DDR3L IDD2NT Measurement Loop

Command
Sub-Loop

A[15:11]
Number
CK, CK#

BA[2:0]

A[9:7]

A[6:3]

A[2:0]
A[10]
RAS#

CAS#

Data
WE#

ODT
CKE

CS#
Cycle

0 D 1 0 0 0 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
0
2 D# 1 1 1 1 0 0 0 0 0 F 0 –
3 D# 1 1 1 1 0 0 0 0 0 F 0 –
Static HIGH

1 4–7 Repeat sub-loop 0, use BA[2:0] = 1; ODT = 0

Toggling

2 8–11 Repeat sub-loop 0, use BA[2:0] = 2; ODT = 1

3 12–15 Repeat sub-loop 0, use BA[2:0] = 3; ODT = 1
4 16–19 Repeat sub-loop 0, use BA[2:0] = 4; ODT = 0
5 20–23 Repeat sub-loop 0, use BA[2:0] = 5; ODT = 0
6 24–27 Repeat sub-loop 0, use BA[2:0] = 6; ODT = 1
7 28–31 Repeat sub-loop 0, use BA[2:0] = 7; ODT = 1

Notes: 1. DQ, DQS, DQS# are midlevel.

2. DM is LOW.
3. All banks closed.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 35: DDR3L IDD4R Measurement Loop

Command
Sub-Loop

A[15:11]
Number
CK, CK#

BA[2:0]

A[9:7]

A[6:3]

A[2:0]

Data3
A[10]
RAS#

CAS#

WE#

ODT
CKE

CS#
Cycle

0 RD 0 1 0 1 0 0 0 0 0 0 0 00000000
1 D 1 0 0 0 0 0 0 0 0 0 0 –
2 D# 1 1 1 1 0 0 0 0 0 0 0 –
3 D# 1 1 1 1 0 0 0 0 0 0 0 –
0
4 RD 0 1 0 1 0 0 0 0 0 F 0 00110011
5 D 1 0 0 0 0 0 0 0 0 F 0 –
Static HIGH

6 D# 1 1 1 1 0 0 0 0 0 F 0 –
Toggling

7 D# 1 1 1 1 0 0 0 0 0 F 0 –
1 8–15 Repeat sub-loop 0, use BA[2:0] = 1
2 16–23 Repeat sub-loop 0, use BA[2:0] = 2
3 24–31 Repeat sub-loop 0, use BA[2:0] = 3
4 32–39 Repeat sub-loop 0, use BA[2:0] = 4
5 40–47 Repeat sub-loop 0, use BA[2:0] = 5
6 48–55 Repeat sub-loop 0, use BA[2:0] = 6
7 56–63 Repeat sub-loop 0, use BA[2:0] = 7

Notes: 1. DQ, DQS, DQS# are midlevel when not driving in burst sequence.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the RD command.
4. All banks open.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 36: DDR3L IDD4W Measurement Loop

Command
Sub-Loop

A[15:11]
Number
CK, CK#

BA[2:0]

A[9:7]

A[6:3]

A[2:0]

Data3
A[10]
RAS#

CAS#

WE#

ODT
CKE

CS#
Cycle

0 WR 0 1 0 0 1 0 0 0 0 0 0 00000000
1 D 1 0 0 0 1 0 0 0 0 0 0 –
2 D# 1 1 1 1 1 0 0 0 0 0 0 –
3 D# 1 1 1 1 1 0 0 0 0 0 0 –
0
4 WR 0 1 0 0 1 0 0 0 0 F 0 00110011
5 D 1 0 0 0 1 0 0 0 0 F 0 –
Static HIGH

6 D# 1 1 1 1 1 0 0 0 0 F 0 –
Toggling

7 D# 1 1 1 1 1 0 0 0 0 F 0 –
1 8–15 Repeat sub-loop 0, use BA[2:0] = 1
2 16–23 Repeat sub-loop 0, use BA[2:0] = 2
3 24–31 Repeat sub-loop 0, use BA[2:0] = 3
4 32–39 Repeat sub-loop 0, use BA[2:0] = 4
5 40–47 Repeat sub-loop 0, use BA[2:0] = 5
6 48–55 Repeat sub-loop 0, use BA[2:0] = 6
7 56–63 Repeat sub-loop 0, use BA[2:0] = 7

Notes: 1. DQ, DQS, DQS# are midlevel when not driving in burst sequence.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the WR command.
4. All banks open.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 37: DDR3L IDD5B Measurement Loop

Command
Sub-Loop

A[15:11]
Number
CK, CK#

BA[2:0]

A[9:7]

A[6:3]

A[2:0]
A[10]
RAS#

CAS#

Data
WE#

ODT
CKE

CS#
Cycle

0 0 REF 0 0 0 1 0 0 0 0 0 0 0 –
1 D 1 0 0 0 0 0 0 0 0 0 0 –
2 D 1 0 0 0 0 0 0 0 0 0 0 –
1a
3 D# 1 1 1 1 0 0 0 0 0 F 0 –
4 D# 1 1 1 1 0 0 0 0 0 F 0 –
Static HIGH

1b 5–8 Repeat sub-loop 1a, use BA[2:0] = 1

Toggling

1c 9–12 Repeat sub-loop 1a, use BA[2:0] = 2

1d 13–16 Repeat sub-loop 1a, use BA[2:0] = 3
1e 17–20 Repeat sub-loop 1a, use BA[2:0] = 4
1f 21–24 Repeat sub-loop 1a, use BA[2:0] = 5
1g 25–28 Repeat sub-loop 1a, use BA[2:0] = 6
1h 29–32 Repeat sub-loop 1a, use BA[2:0] = 7
2 33–nRFC - 1 Repeat sub-loop 1a through 1h until nRFC - 1; truncate if needed

Notes: 1. DQ, DQS, DQS# are midlevel.

2. DM is LOW.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 38: DDR3L IDD Measurement Conditions for IDD6, IDD6ET, and IDD8

IDD6: Self Refresh Current IDD6ET: Self Refresh Current

Normal Temperature Range Extended Temperature Range
IDD Test TC = 0°C to +85°C TC = 0°C to +95°C IDD8: Reset2
CKE LOW LOW Midlevel
External clock Off, CK and CK# = LOW Off, CK and CK# = LOW Midlevel
tCK N/A N/A N/A
tRC N/A N/A N/A
tRAS N/A N/A N/A
tRCD N/A N/A N/A
tRRD N/A N/A N/A
tRC N/A N/A N/A
CL N/A N/A N/A
AL N/A N/A N/A
CS# Midlevel Midlevel Midlevel
Command inputs Midlevel Midlevel Midlevel
Row/column addresses Midlevel Midlevel Midlevel
Bank addresses Midlevel Midlevel Midlevel
Data I/O Midlevel Midlevel Midlevel
Output buffer DQ, DQS Enabled Enabled Midlevel
ODT1 Enabled, midlevel Enabled, midlevel Midlevel
Burst length N/A N/A N/A
Active banks N/A N/A None
Idle banks N/A N/A All
SRT Disabled (normal) Enabled (extended) N/A
ASR Disabled Disabled N/A

Notes: 1. “Enabled, midlevel” means the MR command is enabled, but the signal is midlevel.
2. During a cold boot RESET (initialization), current reading is valid after power is stable
and RESET has been LOW for 1ms; During a warm boot RESET (while operating), current
reading is valid after RESET has been LOW for 200ns + tRFC.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 39: DDR3L IDD7 Measurement Loop

Command
Sub-Loop

A[15:11]
Number
CK, CK#

BA[2:0]

A[9:7]

A[6:3]

A[2:0]

Data3
A[10]
RAS#

CAS#

WE#

ODT
CKE

CS#
Cycle
0 ACT 0 0 1 1 0 0 0 0 0 0 0 –
1 RDA 0 1 0 1 0 0 0 1 0 0 0 00000000
0
2 D 1 0 0 0 0 0 0 0 0 0 0 –
3 Repeat cycle 2 until nRRD - 1
nRRD ACT 0 0 1 1 0 1 0 0 0 F 0 –
nRRD + 1 RDA 0 1 0 1 0 1 0 1 0 F 0 00110011
1
nRRD + 2 D 1 0 0 0 0 1 0 0 0 F 0 –
nRRD + 3 Repeat cycle nRRD + 2 until 2 × nRRD - 1
2 2 × nRRD Repeat sub-loop 0, use BA[2:0] = 2
3 3 × nRRD Repeat sub-loop 1, use BA[2:0] = 3
4 × nRRD D 1 0 0 0 0 3 0 0 0 F 0 –
4
4 × nRRD + 1 Repeat cycle 4 × nRRD until nFAW - 1, if needed
5 nFAW Repeat sub-loop 0, use BA[2:0] = 4
6 nFAW + nRRD Repeat sub-loop 1, use BA[2:0] = 5
Static HIGH

7 nFAW + 2 × nRRD Repeat sub-loop 0, use BA[2:0] = 6

Toggling

8 nFAW + 3 × nRRD Repeat sub-loop 1, use BA[2:0] = 7

nFAW + 4 × nRRD D 1 0 0 0 0 7 0 0 0 F 0 –
9
nFAW + 4 × nRRD + 1 Repeat cycle nFAW + 4 × nRRD until 2 × nFAW - 1, if needed
2 × nFAW ACT 0 0 1 1 0 0 0 0 0 F 0 –
2 × nFAW + 1 RDA 0 1 0 1 0 0 0 1 0 F 0 00110011
10
2 × nFAW + 2 D 1 0 0 0 0 0 0 0 0 F 0 –
2 × nFAW + 3 Repeat cycle 2 × nFAW + 2 until 2 × nFAW + nRRD - 1
2 × nFAW + nRRD ACT 0 0 1 1 0 1 0 0 0 0 0 –
2 × nFAW + nRRD + 1 RDA 0 1 0 1 0 1 0 1 0 0 0 00000000
11
2 × nFAW + nRRD + 2 D 1 0 0 0 0 1 0 0 0 0 0 –
2 × nFAW + nRRD + 3 Repeat cycle 2 × nFAW + nRRD + 2 until 2 × nFAW + 2 × nRRD - 1
12 2 × nFAW + 2 × nRRD Repeat sub-loop 10, use BA[2:0] = 2
13 2 × nFAW + 3 × nRRD Repeat sub-loop 11, use BA[2:0] = 3
2 × nFAW + 4 × nRRD D 1 0 0 0 0 3 0 0 0 0 0 –
14
2 × nFAW + 4 × nRRD + 1 Repeat cycle 2 × nFAW + 4 × nRRD until 3 × nFAW - 1, if needed
15 3 × nFAW Repeat sub-loop 10, use BA[2:0] = 4

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions

Table 39: DDR3L IDD7 Measurement Loop (Continued)

Command
Sub-Loop

A[15:11]
Number
CK, CK#

BA[2:0]

A[9:7]

A[6:3]

A[2:0]

Data3
A[10]
RAS#

CAS#

WE#

ODT
CKE

CS#
Cycle
16 3 × nFAW + nRRD Repeat sub-loop 11, use BA[2:0] = 5
Static HIGH

17 3 × nFAW + 2 × nRRD Repeat sub-loop 10, use BA[2:0] = 6

Toggling

18 3 × nFAW + 3 × nRRD Repeat sub-loop 11, use BA[2:0] = 7

3 × nFAW + 4 × nRRD D 1 0 0 0 0 7 0 0 0 0 0 –
19
3 × nFAW + 4 × nRRD + 1 Repeat cycle 3 × nFAW + 4 × nRRD until 4 × nFAW - 1, if needed

Notes: 1. DQ, DQS, DQS# are midlevel unless driven as required by the RD command.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the RD command.
4. AL = CL-1.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics – IDD Specifications

Electrical Characteristics – IDD Specifications

Table 40: IDD Maximum Limits – Die Rev. K

Speed Bin
IDD Width DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866 Units Notes
IDD0 x4, x8 36 38 39 40 mA 1, 2
x16 43 45 46 48 mA 1, 2
IDD1 x4 43 47 49 52 mA 1, 2
x8 46 50 52 54 mA 1, 2
x16 58 63 65 68 mA 1, 2
IDD2P0 (Slow) All 12 12 12 12 mA 1, 2
IDD2P1 (Fast) All 14 14 14 14 mA 1, 2
IDD2Q All 20 20 20 20 mA 1, 2
IDD2N All 21 21 21 21 mA 1, 2
IDD2NT x4, x8 26 29 31 33 mA 1, 2
x16 30 33 34 36 mA 1, 2
IDD3P All 21 21 21 21 mA 1, 2
IDD3N x4,x8 28 30 32 34 mA 1, 2
x16 30 33 34 36 mA 1, 2
IDD4R x4 64 78 90 100 mA 1, 2
x8 68 82 94 104 mA 1, 2
x16 88 108 128 148 mA 1, 2
IDD4W x4 69 81 93 105 mA 1, 2
x8 73 85 97 108 mA 1, 2
x16 99 119 138 156 mA 1, 2
IDD5B All 177 179 180 182 mA 1, 2
IDD6 All 12 12 12 12 mA 1, 2 , 3
IDD6ET All 15 15 15 15 mA 2, 4
IDD7 x4, 8 121 150 156 164 mA 1, 2
x16 152 172 195 219 mA 1, 2
IDD8 All IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA mA 1, 2

Notes: 1. TC = 85°C; SRT and ASR are disabled.

2. Enabling ASR could increase IDDx by up to an additional 2mA.
3. Restricted to TC (MAX) = 85°C.
4. TC = 85°C; ASR and ODT are disabled; SRT is enabled.
5. The IDD values must be derated (increased) on IT-option devices when operated outside
of the range 0°C ≤ TC ≤ +85°C:
5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must
be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%.
5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC

Electrical Specifications – DC and AC

DC Operating Conditions

Table 41: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions

All voltages are referenced to VSS
Parameter/Condition Symbol Min Nom Max Unit Notes
Supply voltage VDD 1.283 1.35 1.45 V 1–7
I/O supply voltage VDDQ 1.283 1.35 1.45 V 1–7
Input leakage current II –2 – 2 µA
Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.1V
(All other pins not under test = 0V)
VREF supply leakage current IVREF –1 – 1 µA 8, 9
VREFDQ = VDD/2 or VREFCA = VDD/2
(All other pins not under test = 0V)

Notes: 1. VDD and VDDQ must track one another. VDDQ must be ≤ VDD. VSS = VSSQ.
2. VDD and VDDQ may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the
DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC
timing parameters.
3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average
of VDD/VDDQ(t) over a very long period of time (for example, 1 second).
4. Under these supply voltages, the device operates to this DDR3L specification.
5. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
6. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifi-
cations under the same speed timings as defined for this device.
7. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is
in reset while VDD and VDDQ are changed for DDR3 operation (see VDD Voltage Switch-
ing (page 141)).
8. The minimum limit requirement is for testing purposes. The leakage current on the VREF
pin should be minimal.
9. VREF (see Table 42).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC

Input Operating Conditions

Table 42: DDR3L 1.35V DC Electrical Characteristics and Input Conditions

All voltages are referenced to VSS
Parameter/Condition Symbol Min Nom Max Unit Notes
VIN low; DC/commands/address busses VIL VSS N/A See Table 43 V
VIN high; DC/commands/address busses VIH See Table 43 N/A VDD V
Input reference voltage command/address bus VREFCA(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 1, 2
I/O reference voltage DQ bus VREFDQ(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 2, 3
I/O reference voltage DQ bus in SELF REFRESH VREFDQ(SR) VSS 0.5 × VDD VDD V 4
Command/address termination voltage VTT – 0.5 × VDDQ – V 5
(system level, not direct DRAM input)

Notes: 1. VREFCA(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (non-common mode) on VREFCA may not exceed
±1% × VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not ex-
ceed ±2% of VREFCA(DC).
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifi-
cations if the DRAM induces additional AC noise greater than 20 MHz in frequency.
3. VREFDQ(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (non-common mode) on VREFDQ may not exceed
±1% × VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not ex-
ceed ±2% of VREFDQ(DC).
4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH,
within restrictions outlined in the SELF REFRESH section.
5. VTT is not applied directly to the device. VTT is a system supply for signal termination re-
sistors. Minimum and maximum values are system-dependent.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC

Table 43: DDR3L 1.35V Input Switching Conditions - Command and Address

Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 DDR3L-1866 Units

Command and Address
Input high AC voltage: Logic 1 VIH(AC160),min 5 160 160 – mV
VIH(AC135),min5 135 135 135 mV
VIH(AC125,)min 5 – – 125 mV
Input high DC voltage: Logic 1 VIH(DC90),min 90 90 90 mV
Input low DC voltage: Logic 0 VIL(DC90),min –90 –90 –90 mV
Input low AC voltage: Logic 0 VIL(AC125),min5 – – –125 mV
VIL(AC135),min 5 –135 –135 –135 mV
VIL(AC160),min 5 –160 –160 – mV
DQ and DM
Input high AC voltage: Logic 1 VIH(AC160),min5 160 160 – mV
VIH(AC135),min 5 135 135 135 mV
VIH(AC125),min 5 – – 130 mV
Input high DC voltage: Logic 1 VIH(DC90),min 90 90 90 mV
Input low DC voltage: Logic 0 VIL(DC90),min –90 –90 –90 mV
Input low AC voltage: Logic 0 VIL(AC125),min5 – – –130 mV
VIL(AC135),min 5 –135 –135 –135 mV
VIL(AC160),min5 –160 –160 – mV

Notes: 1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All
slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ
and DM inputs.
2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC).
3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC).
4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is
900mV (peak-to-peak).
5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/
command inputs must use either VIH(AC160),min with tIS(AC160) of 210ps or VIH(AC150),min
with tIS(AC135) of 365ps; independently, the data inputs must use either VIH(AC160),min
with tDS(AC160) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC

Table 44: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#)

Parameter/Condition Symbol Min Max Units Notes

Differential input logic high – slew VIH,diff(AC)slew 180 N/A mV 4
Differential input logic low – slew VIL,diff(AC)slew N/A –180 mV 4
Differential input logic high VIH,diff(AC) 2 × (VIH(AC) - VREF) VDD/VDDQ mV 5
Differential input logic low VIL,diff(AC) VSS/VSSQ 2 × (VIL(AC) - VREF) mV 6
Differential input crossing voltage
relative to VDD/2 for DQS, DQS#; VIX VREF(DC) - 150 VREF(DC) + 150 mV 5, 7, 9
CK, CK#
Differential input crossing voltage
VIX (175) VREF(DC) - 175 VREF(DC) + 175 mV 5, 7–9
relative to VDD/2 for CK, CK#
Single-ended high level for strobes VDDQ/2 + 160 VDDQ mV 5
Single-ended high level for CK, VSEH
VDD/2 + 160 VDD mV 5
CK#
Single-ended low level for strobes VSSQ VDDQ/2 - 160 mV 6
VSEL
Single-ended low level for CK, CK# VSS VDD/2 - 160 mV 6

Notes: 1. Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ.
2. Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe.
3. Differential input slew rate = 2 V/ns.
4. Defines slew rate reference points, relative to input crossing voltages.
5. Minimum DC limit is relative to single-ended signals; overshoot specifications are appli-
cable.
6. Maximum DC limit is relative to single-ended signals; undershoot specifications are ap-
plicable.
7. The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device,
and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which
differential input signals must cross.
8. The VIX extended range (±175mV) is allowed only for the clock; this VIX extended range
is only allowed when the following conditions are met: The single-ended input signals
are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 ±250mV, and
the differential slew rate of CK, CK# is greater than 3 V/ns.
9. VIX must provide 25mV (single-ended) of the voltages separation.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC

Figure 11: DDR3L 1.35V Input Signal

VIL and VIH levels with ringback
VDD + 0.4V VDDQ + 0.4V
Narrow pulse width Overshoot

VDD VDDQ
Minimum VIL and VIH levels

VIH(AC)
VIH MIN(AC) VREF + 125/135/160mV VIH(AC)

VIH(DC)
VIH MIN(DC) VREF + 90mV VIH(DC)

MAX 2% Total VREF DC MAX + 1%

VREFDQ + AC noise
VREF DC MAX .51 x VDD VREFDQ + DC error
VREF VREF = VDD/2
DC MIN .49 x VDD VREFDQ - DC error
VREFDQ - AC noise
MAX 2% Total VREF DC MIN - 1% VDD

VIL MIN(DC) VREF - 90mV VIL(DC)

VIL(DC)

VIL MIN(AC) VREF - 125/135/160mV VIL(AC)

VIL(AC)

0.0V VSS

VSS - 0.40V VSS - 0.40V

Narrow pulse width Undershoot

Note: 1. Numbers in diagrams reflect nominal values.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC

DDR3L 1.35V AC Overshoot/Undershoot Specification

Table 45: DDR3L Control and Address Pins

Parameter DDR3L-800 DRR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866

Maximum peak amplitude allowed
for overshoot area 0.4V 0.4V 0.4V 0.4V 0.4V
(see Figure 12)
Maximum peak amplitude allowed
for undershoot area 0.4V 0.4V 0.4V 0.4V 0.4V
(see Figure 13)
Maximum overshoot area above VDD
0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns
(see Figure 12)
Maximum undershoot area below VSS
0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns
(see Figure 13)

Table 46: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins

Parameter DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866

Maximum peak amplitude allowed
for overshoot area 0.4V 0.4V 0.4V 0.4V 0.4V
(see Figure 12)
Maximum peak amplitude allowed
for undershoot area 0.4V 0.4V 0.4V 0.4V 0.4V
(see Figure 13)
Maximum overshoot area above
0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns
VDD/VDDQ (see Figure 12)
Maximum undershoot area below
0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns
VSS/VSSQ (see Figure 13)

Figure 12: Overshoot

Maximum amplitude
Volts (V) Overshoot area

VDD/VDDQ
Time (ns)

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Electrical Specifications – DC and AC

Figure 13: Undershoot

VSS/VSSQ

Volts (V)
Undershoot area
Maximum amplitude

Time (ns)

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC

Figure 14: VIX for Differential Signals

VDD, VDDQ VDD, VDDQ

CK#, DQS# CK#, DQS#

X VIX

VIX

VDD/2, VDDQ/2 X X VDD/2, VDDQ/2

VIX

X VIX

CK, DQS CK, DQS

VSS, VSSQ VSS, VSSQ

Figure 15: Single-Ended Requirements for Differential Signals

VDD or VDDQ

VSEH,min

VDD/2 or VDDQ/2
VSEH
CK or DQS
VSEL,max

VSEL
VSS or VSSQ

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Electrical Specifications – DC and AC

Figure 16: Definition of Differential AC-Swing and tDVAC

tDVAC

VIH,diff(AC)min

VIH,diff,min

CK - CK#
DQS - DQS#
0.0

VIL,diff,max

VIL,diff(AC)max

Half cycle tDVAC

Table 47: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC
Ringback

DDR3L-800/1066/1333/1600 DDR3L-1866
tDVACat tDVACat tDVAC at tDVACat tDVACat
Slew Rate (V/ns) 320mV (ps) 270mV (ps) 270mV (ps) 250mV (ps) 260mV (ps)
>4.0 189 201 163 168 176
4.0 189 201 163 168 176
3.0 162 179 140 147 154
2.0 109 134 95 105 111
1.8 91 119 80 91 97
1.6 69 100 62 74 78
1.4 40 76 37 52 55
1.2 Note1 44 5 22 24
1.0 Note1
<1.0 Note1

Note: 1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input
signal shall become equal to or less than VIL(AC) level.

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Electrical Specifications – DC and AC

DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals

Setup (tIS and tDS) nominal slew rate for a rising signal is defined as the slew rate be-
tween the last crossing of V REF and the first crossing of V IH(AC)min. Setup (tIS and tDS)
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of V REF and the first crossing of V IL(AC)max.
Hold (tIH and tDH) nominal slew rate for a rising signal is defined as the slew rate be-
tween the last crossing of V IL(DC)max and the first crossing of V REF. Hold (tIH and tDH)
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of V IH(DC)min and the first crossing of V REF (see Figure 17 (page 62)).

Table 48: Single-Ended Input Slew Rate Definition

Input Slew Rates

(Linear Signals) Measured
Input Edge From To Calculation
VIH(AC),min - VREF
Rising VREF VIH(AC),min
ΔTRSse
Setup
VREF - VIL(AC),max
Falling VREF VIL(AC),max
ΔTFSse

VREF - VIL(DC),max
Rising VIL(DC),max VREF
ΔTFHse
Hold
VIH(DC),min - VREF
Falling VIH(DC),min VREF
ΔTRSHse

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Electrical Specifications – DC and AC

Figure 17: Nominal Slew Rate Definition for Single-Ended Input Signals
ΔTRSse

Setup Single-ended input voltage (DQ, CMD, ADDR) VIH(AC)min

VIH(DC)min

VREFDQ or
VREFCA

VIL(DC)max

VIL(AC)max

ΔTFSse

ΔTRHse

Hold VIH(AC)min
Single-ended input voltage (DQ, CMD, ADDR)

VIH(DC)min

VREFDQ or
VREFCA

VIL(DC)max

VIL(AC)max

ΔTFHse

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC

DDR3L 1.35V Slew Rate Definitions for Differential Input Signals

Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and meas-
ured, as shown in Table 49 and Figure 18. The nominal slew rate for a rising signal is
defined as the slew rate between V IL,diff,max and V IH,diff,min. The nominal slew rate for a
falling signal is defined as the slew rate between V IH,diff,min and V IL,diff,max.

Table 49: DDR3L 1.35V Differential Input Slew Rate Definition

Differential Input
Slew Rates
(Linear Signals) Measured
Input Edge From To Calculation
VIH,diff,min - VIL,diff,max
Rising VIL,diff,max VIH,diff,min
CK and ΔTRdiff
DQS
reference VIH,diff,min - VIL,diff,max
Falling VIH,diff,min VIL,diff,max
ΔTFdiff

Figure 18: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#
ΔTRdiff
Differential input voltage (DQS, DQS#; CK, CK#)

VIH,diff,min

VIL,diff,max

ΔTFdiff

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 2Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics

ODT Characteristics
The ODT effective resistance RTT is defined by MR1[9, 6, and 2]. ODT is applied to the
DQ, DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values
and a functional representation are listed in Table 50 and Table 51 (page 65). The indi-
vidual pull-up and pull-down resistors (RTT(PU) and RTT(PD)) are defined as follows:
• RTT(PU) = (VDDQ - VOUT)/|IOUT|, under the condition that RTT(PD) is turned off
• RTT(PD) = (VOUT)/|IOUT|, under the condition that RTT(PU) is turned off

Figure 19: ODT Levels and I-V Characteristics

Chip in termination mode
ODT
VDDQ
IPU
IOUT = IPD - IPU
To RTT(PU)
other
circuitry DQ
such as IOUT
RCV, . . . RTT(PD)
VOUT
IPD

VSSQ

Table 50: On-Die Termination DC Electrical Characteristics

Parameter/Condition Symbol Min Nom Max Unit Notes

RTT effective impedance RTT(EFF) See Table 51 (page 65) 1, 2
Deviation of VM with respect to ΔVM –5 5 % 1, 2, 3
VDDQ/2

Notes: 1. Tolerance limits are applicable after proper ZQ calibration has been performed at a
stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). Refer to ODT Sensitivity (page
66) if either the temperature or voltage changes after calibration.
2. Measurement definition for RTT: Apply VIH(AC) to pin under test and measure current
I[VIH(AC)], then apply VIL(AC) to pin under test and measure current I[VIL(AC)]:
VIH(AC) - VIL(AC)
RTT =
I(VIH(AC)) - I(VIL(AC))

3. Measure voltage (VM) at the tested pin with no load:

2 × VM
ΔVM = – 1 × 100
VDDQ

4. For IT and AT devices, the minimum values are derated by 6% when the device operates
between –40°C and 0°C (TC).

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 2Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics

1.35V ODT Resistors

Table 51 provides an overview of the ODT DC electrical characteristics. The values pro-
vided are not specification requirements; however, they can be used as design guide-
lines to indicate what RTT is targeted to provide:
• RTT 120Ω is made up of RTT120(PD240) and RTT120(PU240)
• RTT 60Ω is made up of RTT60(PD120) and RTT60(PU120)
• RTT 40Ω is made up of RTT40(PD80) and RTT40(PU80)
• RTT 30Ω is made up of RTT30(PD60) and RTT30(PU60)
• RTT 20Ω is made up of RTT20(PD40) and RTT20(PU40)

Table 51: 1.35V RTT Effective Impedance

MR1
[9, 6, 2] RTT Resistor VOUT Min Nom Max Units
0, 1, 0 120Ω RTT,120PD240 0.2 × VDDQ 0.6 1.0 1.15 RZQ/1
0.5 × VDDQ 0.9 1.0 1.15 RZQ/1
0.8 × VDDQ 0.9 1.0 1.45 RZQ/1
RTT,120PU240 0.2 × VDDQ 0.9 1.0 1.45 RZQ/1
0.5 × VDDQ 0.9 1.0 1.15 RZQ/1
0.8 × VDDQ 0.6 1.0 1.15 RZQ/1
120Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/2
0, 0, 1 60Ω RTT,60PD120 0.2 × VDDQ 0.6 1.0 1.15 RZQ/2
0.5 × VDDQ 0.9 1.0 1.15 RZQ/2
0.8 × VDDQ 0.9 1.0 1.45 RZQ/2
RTT,60PU120 0.2 × VDDQ 0.9 1.0 1.45 RZQ/2
0.5 × VDDQ 0.9 1.0 1.15 RZQ/2
0.8 × VDDQ 0.6 1.0 1.15 RZQ/2
60Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/4
0, 1, 1 40Ω RTT,40PD80 0.2 × VDDQ 0.6 1.0 1.15 RZQ/3
0.5 × VDDQ 0.9 1.0 1.15 RZQ/3
0.8 × VDDQ 0.9 1.0 1.45 RZQ/3
RTT,40PU80 0.2 × VDDQ 0.9 1.0 1.45 RZQ/3
0.5 × VDDQ 0.9 1.0 1.15 RZQ/3
0.8 × VDDQ 0.6 1.0 1.15 RZQ/3
40Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/6
1, 0, 1 30Ω RTT,30PD60 0.2 × VDDQ 0.6 1.0 1.15 RZQ/4
0.5 × VDDQ 0.9 1.0 1.15 RZQ/4
0.8 × VDDQ 0.9 1.0 1.45 RZQ/4
RTT,30PU60 0.2 × VDDQ 0.9 1.0 1.45 RZQ/4
0.5 × VDDQ 0.9 1.0 1.15 RZQ/4
0.8 × VDDQ 0.6 1.0 1.15 RZQ/4
30Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/8

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 2Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics

Table 51: 1.35V RTT Effective Impedance (Continued)

MR1
[9, 6, 2] RTT Resistor VOUT Min Nom Max Units
1, 0, 0 20Ω RTT,20PD40 0.2 × VDDQ 0.6 1.0 1.15 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.9 1.0 1.45 RZQ/6
RTT,20PU40 0.2 × VDDQ 0.9 1.0 1.45 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.6 1.0 1.15 RZQ/6
20Ω VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/12

ODT Sensitivity
If either the temperature or voltage changes after I/O calibration, then the tolerance
limits listed in Table 50 and Table 51 can be expected to widen according to Table 52
and Table 53.

Table 52: ODT Sensitivity Definition

Symbol Min Max Unit

RTT 0.9 - dRTTdT × |DT| - dRTTdV × |DV| 1.6 + dRTTdT × |DT| + dRTTdV × |DV| RZQ/(2, 4, 6, 8, 12)

Note: 1. ΔT = T - T(@ calibration), ΔV = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.

Table 53: ODT Temperature and Voltage Sensitivity

Change Min Max Unit

dRTTdT 0 1.5 %/°C
dRTTdV 0 0.15 %/mV

Note: 1. ΔT = T - T(@ calibration), ΔV = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.

ODT Timing Definitions

ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 20. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another de-
fines when ODT turns on or off dynamically. Table 54 and Table 55 (page 67) outline
and provide definition and measurement references settings for each parameter.
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.

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 2Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics

Figure 20: ODT Timing Reference Load

VDDQ/2
DUT VREF

DQ, DM RTT = 25Ω

CK, CK# DQS, DQS# VTT = VSSQ
TDQS, TDQS#
Timing reference point
ZQ
RZQ = 240Ω
VSSQ

Table 54: ODT Timing Definitions

Symbol Begin Point Definition End Point Definition Figure

tAON Rising edge of CK – CK# defined by the end Extrapolated point at VSSQ Figure 21 (page 68)
point of ODTLon
tAOF Rising edge of CK – CK# defined by the end Extrapolated point at VRTT,nom Figure 21 (page 68)
point of ODTLoff
tAONPD Rising edge of CK – CK# with ODT first being Extrapolated point at VSSQ Figure 22 (page 68)
registered HIGH
tAOFPD Rising edge of CK – CK# with ODT first being Extrapolated point at VRTT,nom Figure 22 (page 68)
registered LOW
tADC Rising edge of CK – CK# defined by the end Extrapolated points at VRTT(WR) and Figure 23 (page 69)
point of ODTLcnw, ODTLcwn4, or ODTLcwn8 VRTT,nom

Table 55: DDR3L(1.35V) Reference Settings for ODT Timing Measurements

Measured
Parameter RTT,nom Setting RTT(WR) Setting VSW1 VSW2
tAON RZQ/4 (60Ω) N/A 50mV 100mV
RZQ/12 (20Ω) N/A 100mV 200mV
tAOF RZQ/4 (60Ω) N/A 50mV 100mV
RZQ/12 (20Ω) N/A 100mV 200mV
tAONPD RZQ/4 (60Ω) N/A 50mV 100mV
RZQ/12 (20Ω) N/A 100mV 200mV
tAOFPD RZQ/4 (60Ω) N/A 50mV 100mV
RZQ/12 (20Ω) N/A 100mV 200mV
tADC RZQ/12 (20Ω) RZQ/2 (20Ω) 200mV 250mV

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ODT Characteristics

Figure 21: tAON and tAOF Definitions

tAON tAOF
Begin point: Rising edge of CK - CK# Begin point: Rising edge of CK - CK#
defined by the end point of ODTLon defined by the end point of ODTLoff

CK CK

VDDQ/2

CK# CK#

tAON tAOF

End point: Extrapolated point at VRTT,nom

TSW2 VRTT,nom
TSW1
DQ, DM TSW1
TSW1
DQS, DQS# VSW2 VSW2
TDQS, TDQS# VSSQ VSW1 VSW1
VSSQ

End point: Extrapolated point at VSSQ

Figure 22: tAONPD and tAOFPD Definitions

tAONPD tAOFPD
Begin point: Rising edge of CK - CK# Begin point: Rising edge of CK - CK#
with ODT first registered high with ODT first registered low

CK CK

VDDQ/2

CK# CK#

tAONPD tAOFPD

End point: Extrapolated point at VRTT,nom

TSW2 VRTT,nom
TSW2
TSW1
DQ, DM TSW1
DQS, DQS# VSW2 VSW2
TDQS, TDQS#
VSSQ VSW1 VSW1
VSSQ

End point: Extrapolated point at VSSQ

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ODT Characteristics

Figure 23: tADC Definition

Begin point: Rising edge of CK - CK# Begin point: Rising edge of CK - CK# defined by
defined by the end point of ODTLcnw the end point of ODTLcwn4 or ODTLcwn8

CK

VDDQ/2

CK#

tADC tADC

VRTT,nom VRTT,nom
TSW21
DQ, DM End point: TSW11 TSW22
DQS, DQS# Extrapolated VSW2
TDQS, TDQS# point at VRTT,nom
VSW1 TSW12

VRTT(WR) End point: Extrapolated point at VRTT(WR)

VSSQ

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance

Output Driver Impedance

The output driver impedance is selected by MR1[5,1] during initialization. The selected
value is able to maintain the tight tolerances specified if proper ZQ calibration is per-
formed. Output specifications refer to the default output driver unless specifically sta-
ted otherwise. A functional representation of the output buffer is shown below. The out-
put driver impedance RON is defined by the value of the external reference resistor RZQ
as follows:
• RON,x = RZQ/y (with RZQ = 240Ω ±1%; x = 34Ω or 40Ω with y = 7 or 6, respectively)
The individual pull-up and pull-down resistors RON(PU) and RON(PD) are defined as fol-
lows:
• RON(PU) = (VDDQ - VOUT)/|IOUT|, when RON(PD) is turned off
• RON(PD) = (VOUT)/|IOUT|, when RON(PU) is turned off

Figure 24: Output Driver

Chip in drive mode

Output driver

VDDQ
IPU

To RON(PU)
other
circuitry DQ
such as IOUT
RCV, . . . RON(PD)

VOUT
IPD
VSSQ

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance

34 Ohm Output Driver Impedance

The 34Ω driver (MR1[5, 1] = 01) is the default driver. Unless otherwise stated, all timings
and specifications listed herein apply to the 34Ω driver only. Its impedance RON is de-
fined by the value of the external reference resistor RZQ as follows: RON34 = RZQ/7 (with
nominal RZQ = 240Ω ±1%) and is actually 34.3Ω ±1%.

Table 56: DDR3L 34 Ohm Driver Impedance Characteristics

MR1
[5, 1] RON Resistor VOUT Min Nom Max Units
0, 1 34.3Ω RON,34PD 0.2 × VDDQ 0.6 1.0 1.15 RZQ/7
0.5 × VDDQ 0.9 1.0 1.15 RZQ/7
0.8 × VDDQ 0.9 1.0 1.45 RZQ/7
RON,34PU 0.2 × VDDQ 0.9 1.0 1.45 RZQ/7
0.5 × VDDQ 0.9 1.0 1.15 RZQ/7
0.8 × VDDQ 0.6 1.0 1.15 RZQ/7
Pull-up/pull-down mismatch (MMPUPD) VIL(AC) to VIH(AC) –10 N/A 10 %

Notes: 1. Tolerance limits assume RZQ of 240Ω ±1% and are applicable after proper ZQ calibra-
tion has been performed at a stable temperature and voltage: VDDQ = VDD; VSSQ = VSS).
Refer to DDR3L 34 Ohm Output Driver Sensitivity (page 73) if either the temperature
or the voltage changes after calibration.
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Meas-
ure both RON(PU) and RON(PD) at 0.5 × VDDQ:
RON(PU) - RON(PD)
MMPUPD = × 100
RON,nom

3. For IT and AT devices, the minimum values are derated by 6% when the device operates
between –40°C and 0°C (TC).
A larger maximum limit will result in slightly lower minimum currents.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance

DDR3L 34 Ohm Driver

Using Table 57, the 34Ω driver’s current range has been calculated and summarized in
Table 58 (page 72) VDD = 1.35V, Table 59 for V DD = 1.45V, and Table 60 (page 73) for
VDD = 1.283V. The individual pull-up and pull-down resistors R ON34(PD) and RON34(PU)
are defined as follows:
• RON34(PD) = (VOUT)/|IOUT|; RON34(PU) is turned off
• RON34(PU) = (VDDQ - VOUT)/|IOUT|; RON34(PD) is turned off

Table 57: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations

RON Min Nom Max Unit

RZQ = 240Ω ±1% 237.6 240 242.4 Ω
RZQ/7 = (240Ω ±1%)/7 33.9 34.3 34.6 Ω
MR1[5,1] RON Resistor VOUT Min Nom Max Unit
0, 1 34.3Ω RON34(PD) 0.2 × VDDQ 20.4 34.3 38.1 Ω
0.5 × VDDQ 30.5 34.3 38.1 Ω
0.8 × VDDQ 30.5 34.3 48.5 Ω
RON34(PU) 0.2 × VDDQ 30.5 34.3 48.5 Ω
0.5 × VDDQ 30.5 34.3 38.1 Ω
0.8 × VDDQ 20.4 34.3 38.1 Ω

Table 58: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.35V

MR1[5,1] RON Resistor VOUT Max Nom Min Unit

0, 1 34.3Ω RON34(PD) IOL @ 0.2 × VDDQ 13.3 7.9 7.1 mA
IOL @ 0.5 × VDDQ 22.1 19.7 17.7 mA
IOL @ 0.8 × VDDQ 35.4 31.5 22.3 mA
RON34(PU) IOH @ 0.2 × VDDQ 35.4 31.5 22.3 mA
IOH @ 0.5 × VDDQ 22.1 19.7 17.7 mA
IOH @ 0.8 × VDDQ 13.3 7.9 7.1 mA

Table 59: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.45V

MR1[5,1] RON Resistor VOUT Max Nom Min Unit

0, 1 34.3Ω RON34(PD) IOL @ 0.2 × VDDQ 14.2 8.5 7.6 mA
IOL @ 0.5 × VDDQ 23.7 21.1 19.0 mA
IOL @ 0.8 × VDDQ 38.0 33.8 23.9 mA
RON34(PU) IOH @ 0.2 × VDDQ 38.0 33.8 23.9 mA
IOH @ 0.5 × VDDQ 23.7 21.1 19.0 mA
IOH @ 0.8 × VDDQ 14.2 8.5 7.6 mA

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Output Driver Impedance

Table 60: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.283

MR1[5,1] RON Resistor VOUT Max Nom Min Unit

0, 1 34.3Ω RON34(PD) IOL @ 0.2 × VDDQ 12.6 7.5 6.7 mA
IOL @ 0.5 × VDDQ 21.0 18.7 16.8 mA
IOL @ 0.8 × VDDQ 33.6 29.9 21.2 mA
RON34(PU) IOH @ 0.2 × VDDQ 33.6 29.9 21.2 mA
IOH @ 0.5 × VDDQ 21.0 18.7 16.8 mA
IOH @ 0.8 × VDDQ 12.6 7.5 6.7 mA

DDR3L 34 Ohm Output Driver Sensitivity

If either the temperature or the voltage changes after ZQ calibration, then the tolerance
limits listed in Table 56 (page 71) can be expected to widen according to Table 61 and
Table 62.

Table 61: DDR3L 34 Ohm Output Driver Sensitivity Definition

Symbol Min Max Unit

RON(PD) @ 0.2 × VDDQ 0.6 - dRONdTL × |ΔT| - dRONdVL × |ΔV| 1.1 + dRONdTL × |ΔT| + dRONdVL × |ΔV| RZQ/7
RON(PD) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV| 1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV| RZQ/7
RON(PD) @ 0.8 × VDDQ 0.9 - dRONdTH × |ΔT| - dRONdVH × |ΔV| 1.4 + dRONdTH × |ΔT| + dRONdVH × |ΔV| RZQ/7
RON(PU) @ 0.2 × VDDQ 0.9 - dRONdTL × |ΔT| - dRONdVL × |ΔV| 1.4 + dRONdTL × |ΔT| + dRONdVL × |ΔV| RZQ/7
RON(PU) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV| 1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV| RZQ/7
RON(PU) @ 0.8 × VDDQ 0.6 - dRONdTH × |ΔT| - dRONdVH × |ΔV| 1.1 + dRONdTH × |ΔT| + dRONdVH × |ΔV| RZQ/7

Note: 1. ΔT = T - T(@CALIBRATION); ΔV = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ.

Table 62: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity

Change Min Max Unit

dRONdTM 0 1.5 %/°C
dRONdVM 0 0.13 %/mV
dRONdTL 0 1.5 %/°C
dRONdVL 0 0.13 %/mV
dRONdTH 0 1.5 %/°C
dRONdVH 0 0.13 %/mV

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance

DDR3L Alternative 40 Ohm Driver

Table 63: DDR3L 40 Ohm Driver Impedance Characteristics

MR1
[5, 1] RON Resistor VOUT Min Nom Max Units
0, 0 40Ω RON,40PD 0.2 × VDDQ 0.6 1.0 1.15 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.9 1.0 1.45 RZQ/6
RON,40PU 0.2 × VDDQ 0.9 1.0 1.45 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.6 1.0 1.15 RZQ/6
Pull-up/pull-down mismatch (MMPUPD) VIL(AC) to VIH(AC) –10 N/A 10 %

Notes: 1. Tolerance limits assume RZQ of 240Ω ±1% and are applicable after proper ZQ calibra-
tion has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS).
Refer to DDR3L 40 Ohm Output Driver Sensitivity (page 74) if either the temperature
or the voltage changes after calibration.
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Meas-
ure both RON(PU) and RON(PD) at 0.5 × VDDQ:
RON(PU) - RON(PD)
MMPUPD = × 100
RON,nom

3. For IT and AT devices, the minimum values are derated by 6% when the device operates
between –40°C and 0°C (TC).
A larger maximum limit will result in slightly lower minimum currents.

DDR3L 40 Ohm Output Driver Sensitivity

If either the temperature or the voltage changes after I/O calibration, then the tolerance
limits listed in Table 63 can be expected to widen according to Table 64 and Table 65
(page 75).

Table 64: DDR3L 40 Ohm Output Driver Sensitivity Definition

Symbol Min Max Unit

RON(PD) @ 0.2 × VDDQ 0.6 - dRONdTL × |ΔT| - dRONdVL × |ΔV| 1.1 + dRONdTL × |ΔT| + dRONdVL × |ΔV| RZQ/6
RON(PD) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV| 1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV| RZQ/6
RON(PD) @ 0.8 × VDDQ 0.9 - dRONdTH × |ΔT| - dRONdVH × |ΔV| 1.4 + dRONdTH × |ΔT| + dRONdVH × |ΔV| RZQ/6
RON(PU) @ 0.2 × VDDQ 0.9 - dRONdTL × |ΔT| - dRONdVL × |ΔV| 1.4 + dRONdTL × |ΔT| + dRONdVL × |ΔV| RZQ/6
RON(PU) @ 0.5 × VDDQ 0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV| 1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV| RZQ/6
RON(PU) @ 0.8 × VDDQ 0.6 - dRONdTH × |ΔT| - dRONdVH × |ΔV| 1.1 + dRONdTH × |ΔT| + dRONdVH × |ΔV| RZQ/6

Note: 1. ΔT = T - T(@CALIBRATION), ΔV = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance

Table 65: 40 Ohm Output Driver Voltage and Temperature Sensitivity

Change Min Max Unit

dRONdTM 0 1.5 %/°C
dRONdVM 0 0.15 %/mV
dRONdTL 0 1.5 %/°C
dRONdVL 0 0.15 %/mV
dRONdTH 0 1.5 %/°C
dRONdVH 0 0.15 %/mV

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions

Output Characteristics and Operating Conditions

Table 66: DDR3L Single-Ended Output Driver Characteristics

All voltages are referenced to VSS
Parameter/Condition Symbol Min Max Unit Notes
Output leakage current: DQ are disabled; IOZ –5 5 µA 1
0V ≤ VOUT ≤ VDDQ; ODT is disabled; ODT is HIGH
Output slew rate: Single-ended; For rising and falling edges, SRQse 1.75 6 V/ns 1, 2, 3, 4
measure between VOL(AC) = VREF - 0.09 × VDDQ and VOH(AC) =
VREF + 0.09 × VDDQ
Single-ended DC high-level output voltage VOH(DC) 0.8 × VDDQ V 1, 2, 5
Single-ended DC mid-point level output voltage VOM(DC) 0.5 × VDDQ V 1, 2, 5
Single-ended DC low-level output voltage VOL(DC) 0.2 × VDDQ V 1, 2, 5
Single-ended AC high-level output voltage VOH(AC) VTT + 0.1 × VDDQ V 1, 2, 3, 6
Single-ended AC low-level output voltage VOL(AC) VTT - 0.1 × VDDQ V 1, 2, 3, 6
Delta RON between pull-up and pull-down for DQ/DQS MMPUPD –10 10 % 1, 7
Test load for AC timing and output slew rates Output to VTT (VDDQ/2) via 25Ω resistor 3

Notes: 1. RZQ of 240Ω ±1% with RZQ/7 enabled (default 34Ω driver) and is applicable after prop-
er ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD;
VSSQ = VSS).
2. VTT = VDDQ/2.
3. See Figure 27 (page 79) for the test load configuration.
4. The 6 V/ns maximum is applicable for a single DQ signal when it is switching either from
HIGH to LOW or LOW to HIGH while the remaining DQ signals in the same byte lane are
either all static or all switching in the opposite direction. For all other DQ signal switch-
ing combinations, the maximum limit of 6 V/ns is reduced to 5 V/ns.
5. See Figure 24 (page 70) for IV curve linearity. Do not use AC test load.
6. See Table 69 (page 79) for output slew rate.
7. See Figure 24 (page 70) for additional information.
8. See Figure 25 (page 77) for an example of a single-ended output signal.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions

Figure 25: DQ Output Signal

MAX output

VOH(AC)

VOL(AC)

MIN output

Table 67: DDR3L Differential Output Driver Characteristics

All voltages are referenced to VSS
Parameter/Condition Symbol Min Max Unit Notes
Output leakage current: DQ are disabled; IOZ –5 5 µA 1
0V ≤ VOUT ≤ VDDQ; ODT is disabled; ODT is HIGH
DDR3L Output slew rate: Differential; For rising and fall- SRQdiff 3.5 12 V/ns 1
ing edges, measure between VOL,diff(AC) = –0.18 × VDDQ
and VOH,diff(AC) = 0.18 × VDDQ
Differential high-level output voltage VOH,diff(AC) +0.2 × VDDQ V 1, 4
Differential low-level output voltage VOL,diff(AC) –0.2 × VDDQ V 1, 4
Delta Ron between pull-up and pull-down for DQ/DQS MMPUPD –10 10 % 1, 5
Test load for AC timing and output slew rates Output to VTT (VDDQ/2) via 25Ω resistor 3

Notes: 1. RZQ of 240Ω ±1% with RZQ/7 enabled (default 34Ω driver) and is applicable after prop-
er ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD;
VSSQ = VSS).
2. VREF = VDDQ/2; slew rate @ 5 V/ns, interpolate for faster slew rate.
3. See Figure 27 (page 79) for the test load configuration.
4. See Table 70 (page 81) for the output slew rate.
5. See Table 56 (page 71) for additional information.
6. See Figure 26 (page 78) for an example of a differential output signal.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions

Table 68: DDR3L Differential Output Driver Characteristics VOX(AC)

All voltages are referenced to VSS
DDR3L- 800/1066/1333 DQS/DQS# Differential Slew Rate
Parameter/Condi-
Symbol 3.5V/n Unit
tion 4V/ns 5V/ns 6V/ns 7V/ns 8V/ns 9V/ns 10V/ns 12V/ns
s
Output differential VOX(AC) Max +115 +130 +135 +195 +205 +205 +205 +205 +205 mV
crosspoint voltage Min -115 -130 -135 -195 -205 -205 -205 -205 -205 mV
DDR3L-1600/1866 DQS/DQS# Differential Slew Rate
Parameter/Condi-
Symbol 3.5V/n Unit
tion 4V/ns 5v/ns 6V/ns 7V/ns 8V/ns 9V/ns 10V/ns 12V/ns
s
Output differential VOX(AC) Max +90 +105 +135 +155 +180 +205 +205 +205 +205 mV
crosspoint voltage Min -90 -105 -135 -155 -180 -205 -205 -205 -205 mV

Notes: 1. RZQ of 240Ω ±1% with RZQ/7 enabled (default 34Ω driver) and is applicable after prop-
er ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD;
VSSQ = VSS).
2. See Figure 27 (page 79) for the test load configuration.
3. See Figure 26 (page 78) for an example of a differential output signal.
4. For a differential slew rate between the list values, the VOX(AC) value may be obtained
by linear interpolation.

Figure 26: Differential Output Signal

MAX output

VOH

VOX(AC)max
X X

X
X VOX(AC)min

VOL

MIN output

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions

Reference Output Load

Figure 27 represents the effective reference load of 25Ω used in defining the relevant de-
vice AC timing parameters (except ODT reference timing) as well as the output slew rate
measurements. It is not intended to be a precise representation of a particular system
environment or a depiction of the actual load presented by a production tester. System
designers should use IBIS or other simulation tools to correlate the timing reference
load to a system environment.

Figure 27: Reference Output Load for AC Timing and Output Slew Rate

VDDQ/2
DUT VREF

DQ RTT = 25Ω
VTT = VDDQ/2
DQS
DQS#
Timing reference point
ZQ
RZQ = 240Ω
VSS

Slew Rate Definitions for Single-Ended Output Signals

The single-ended output driver is summarized in Table 66 (page 76). With the reference
load for timing measurements, the output slew rate for falling and rising edges is de-
fined and measured between V OL(AC) and V OH(AC) for single-ended signals.

Table 69: Single-Ended Output Slew Rate Definition

Single-Ended Output Slew

Rates (Linear Signals) Measured
Output Edge From To Calculation
DQ Rising VOL(AC) VOH(AC) VOH(AC) - VOL(AC)
ΔTRse

Falling VOH(AC) VOL(AC) VOH(AC) - VOL(AC)

ΔTFse

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions

Figure 28: Nominal Slew Rate Definition for Single-Ended Output Signals
ΔTRse

VOH(AC)

VTT

VOL(AC)

ΔTFse

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 2Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions

Slew Rate Definitions for Differential Output Signals

The differential output driver is summarized in Table 67 (page 77). With the reference
load for timing measurements, the output slew rate for falling and rising edges is de-
fined and measured between V OL(AC) and V OH(AC) for differential signals.

Table 70: Differential Output Slew Rate Definition

Differential Output Slew

Rates (Linear Signals) Measured
Output Edge From To Calculation
DQS, DQS# Rising VOL,diff(AC) VOH,diff(AC) VOH,diff(AC) - VOL,diff(AC)
ΔTRdiff

Falling VOH,diff(AC) VOL,diff(AC) VOH,diff(AC) - VOL,diff(AC)

ΔTFdiff

Figure 29: Nominal Differential Output Slew Rate Definition for DQS, DQS#
ΔTRdiff

VOH,diff(AC)

VOL,diff(AC)

ΔTFdiff

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 2Gb: x4, x8, x16 DDR3L SDRAM
Speed Bin Tables

Speed Bin Tables

Table 71: DDR3L-1066 Speed Bins

DDR3L-1066 Speed Bin -187E -187

CL-tRCD-tRP 7-7-7 8-8-8
Parameter Symbol Min Max Min Max Unit Notes
Internal READ command to first data tAA 13.125 – 15 – ns
ACTIVATE to internal READ or WRITE delay tRCD 13.125 – 15 – ns
time
PRECHARGE command period tRP 13.125 – 15 – ns
ACTIVATE-to-ACTIVATE or REFRESH command tRC 50.625 – 52.5 – ns
period
ACTIVATE-to-PRECHARGE command period tRAS 37.5 9 x tREFI 37.5 9 x tREFI ns 1
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 3.0 3.3 ns 2
CWL = 6 tCK (AVG) Reserved Reserved ns 3
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 2.5 3.3 ns 2
CWL = 6 tCK (AVG) Reserved Reserved ns 3
CL = 7 CWL = 5 tCK (AVG) Reserved Reserved ns 3
CWL = 6 tCK (AVG) 1.875 <2.5 Reserved ns 2, 3
CL = 8 CWL = 5 tCK (AVG) Reserved Reserved ns 3
CWL = 6 tCK (AVG) 1.875 <2.5 1.875 <2.5 ns 2
Supported CL settings 5, 6, 7, 8 5, 6, 8 CK
Supported CWL settings 5, 6 5, 6 CK

Notes: 1. tREFI depends on TOPER.

2. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
3. Reserved settings are not allowed.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Speed Bin Tables

Table 72: DDR3L-1333 Speed Bins

DDR3L-1333 Speed Bin -15E1 -152

CL-tRCD-tRP 9-9-9 10-10-10
Parameter Symbol Min Max Min Max Unit Notes
Internal READ command to first data tAA 13.5 – 15 – ns
ACTIVATE to internal READ or WRITE delay tRCD 13.5 – 15 – ns
time
PRECHARGE command period tRP 13.5 – 15 – ns
ACTIVATE-to-ACTIVATE or REFRESH command tRC 49.5 – 51 – ns
period
ACTIVATE-to-PRECHARGE command period tRAS 36 9 x tREFI 36 9 x tREFI ns 3
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 3.0 3.3 ns 4
CWL = 6, 7 tCK (AVG) Reserved Reserved ns 5
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 2.5 3.3 ns 4
CWL = 6 tCK (AVG) Reserved Reserved ns 5
CWL = 7 tCK (AVG) Reserved Reserved ns 5
CL = 7 CWL = 5 tCK (AVG) Reserved Reserved ns 5
CWL = 6 tCK (AVG) 1.875 <2.5 Reserved ns 4, 5
CWL = 7 tCK (AVG) Reserved Reserved ns 5
CL = 8 CWL = 5 tCK (AVG) Reserved Reserved ns 5
CWL = 6 tCK (AVG) 1.875 <2.5 1.875 <2.5 ns 4
CWL = 7 tCK (AVG) Reserved Reserved ns 5
CL = 9 CWL = 5, 6 tCK (AVG) Reserved Reserved ns 5
CWL = 7 tCK (AVG) 1.5 <1.875 Reserved ns 4, 5
CL = 10 CWL = 5, 6 tCK (AVG) Reserved Reserved ns 5
CWL = 7 tCK (AVG) 1.5 <1.875 1.5 <1.875 ns 4
Supported CL settings 5, 6, 7, 8, 9, 10 5, 6, 8, 10 CK
Supported CWL settings 5, 6, 7 5, 6, 7 CK

Notes: 1. The -15E speed grade is backward compatible with 1066, CL = 7 (-187E).
2. The -15 speed grade is backward compatible with 1066, CL = 8 (-187).
3. tREFI depends on T
OPER.
4. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
5. Reserved settings are not allowed.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Speed Bin Tables

Table 73: DDR3L-1600 Speed Bins

DDR3L-1600 Speed Bin -1251

CL-tRCD-tRP 11-11-11
Parameter Symbol Min Max Unit Notes
Internal READ command to first data tAA 13.75 – ns
ACTIVATE to internal READ or WRITE delay time tRCD 13.75 – ns
PRECHARGE command period tRP 13.75 – ns
ACTIVATE-to-ACTIVATE or REFRESH command period tRC 48.75 – ns
ACTIVATE-to-PRECHARGE command period tRAS 35 9 x tREFI ns 2
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 ns 3
CWL = 6, 7, 8 tCK (AVG) Reserved ns 4
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 ns 3
CWL = 6 tCK (AVG) Reserved ns 4
CWL = 7, 8 tCK (AVG) Reserved ns 4
CL = 7 CWL = 5 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) Reserved ns 4
CL = 8 CWL = 5 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) Reserved ns 4
CL = 9 CWL = 5, 6 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 8 tCK (AVG) Reserved ns 4
CL = 10 CWL = 5, 6 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 8 tCK (AVG) Reserved ns 4
CL = 11 CWL = 5, 6, 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) 1.25 <1.5 ns 3
Supported CL settings 5, 6, 7, 8, 9, 10, 11 CK
Supported CWL settings 5, 6, 7, 8 CK

Notes: 1. The -125 speed grade is backward compatible with 1333, CL = 9 (-15E) and 1066, CL = 7
(-187E).
2. tREFI depends on TOPER.
3. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
4. Reserved settings are not allowed.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Speed Bin Tables

Table 74: DDR3L-1866 Speed Bins

DDR3L-1866 Speed Bin -1071

CL-tRCD-tRP 13-13-13
Parameter Symbol Min Max Unit Notes
Internal READ command to first data tAA 13.91 20
ACTIVATE to internal READ or WRITE delay time tRCD 13.91 – ns
PRECHARGE command period tRP 13.91 – ns
ACTIVATE-to-ACTIVATE or REFRESH command period tRC 47.91 – ns
ACTIVATE-to-PRECHARGE command period tRAS 34 9 x tREFI ns 2
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 ns 3
CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 ns 3
CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4
CL = 7 CWL = 5, 7, 8, 9 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CL = 8 CWL = 5, 8, 9 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 7 tCK (AVG) Reserved ns 4
CL = 9 CWL = 5, 6, 8, 9 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CL = 10 CWL = 5, 6, 9 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 8 tCK (AVG) Reserved ns 4
CL = 11 CWL = 5, 6, 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) 1.25 <1.5 ns 3
CWL = 9 tCK (AVG) Reserved ns 4
CL = 12 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4
CWL = 9 tCK (AVG) Reserved ns 4
CL = 13 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4
CWL = 9 tCK (AVG) 1.07 <1.25 ns 3
Supported CL settings 5, 6, 7, 8, 9, 10, 11, 13 CK
Supported CWL settings 5, 6, 7, 8, 9 CK

Notes: 1. The -107 speed grade is backward compatible with 1600, CL = 11 (-125) , 1333, CL = 9
(-15E) and 1066, CL = 7 (-187E).
2. tREFI depends on TOPER.
3. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
4. Reserved settings are not allowed.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Electrical Characteristics and AC Operating Conditions

Table 75: Electrical Characteristics and AC Operating Conditions

Notes 1–8 apply to the entire table
DDR3L DDR3L DDR3L DDR3L
-800 -1066 -1333 -1600
Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes
Clock Timing
Clock period TC ≤ 85°C tCK 8 7800 8 7800 8 7800 8 7800 ns 9, 42
average: DLL dis- T = >85°C to (DLL_DIS) 8 3900 8 3900 8 3900 8 3900 ns 42
C
able mode 95°C
Clock period average: DLL enable tCK (AVG) See Speed Bin Tables for tCK range allowed ns 10, 11
mode
High pulse width average tCH (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 CK 12
Low pulse width average tCL (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 CK 12
Clock period jit- DLL locked tJITper –100 100 –90 90 –80 80 –70 70 ps 13
ter DLL locking tJITper,lck –90 90 –80 80 –70 70 –60 60 ps 13
Clock absolute period tCK (ABS) MIN = tCK (AVG) MIN + tJITper MIN; ps
MAX = tCK (AVG) MAX + tJITper MAX
Clock absolute high pulse width tCH (ABS) 0.43 – 0.43 – 0.43 – 0.43 – tCK 14
(AVG)
Clock absolute low pulse width tCL (ABS) 0.43 – 0.43 – 0.43 – 0.43 – tCK 15
(AVG)
Cycle-to-cycle jit- DLL locked tJITcc 200 180 160 140 ps 16
ter DLL locking tJITcc,lck 180 160 140 120 ps 16
Cumulative error 2 cycles tERR2per –147 147 –132 132 –118 118 –103 103 ps 17
across 3 cycles tERR3per –175 175 –157 157 –140 140 –122 122 ps 17
4 cycles tERR4per –194 194 –175 175 –155 155 –136 136 ps 17
5 cycles tERR5per –209 209 –188 188 –168 168 –147 147 ps 17
6 cycles tERR6per –222 222 –200 200 –177 177 –155 155 ps 17
7 cycles tERR7per –232 232 –209 209 –186 186 –163 163 ps 17
8 cycles tERR8per –241 241 –217 217 –193 193 –169 169 ps 17
9 cycles tERR9per –249 249 –224 224 –200 200 –175 175 ps 17
10 cycles tERR10per –257 257 –231 231 –205 205 –180 180 ps 17
11 cycles tERR11per –263 263 –237 237 –210 210 –184 184 ps 17
12 cycles tERR12per –269 269 –242 242 –215 215 –188 188 ps 17
n = 13, 14 . . . tERRnper tERRnper
MIN = (1 + 0.68ln[n]) × tJITper MIN ps 17
49, 50 cycles tERRnper MAX = (1 + 0.68ln[n]) × tJITper MAX

DQ Input Timing
Data setup time Base (specifica- tDS 90 – 40 – – – – – ps 18, 19,
to DQS, DQS# tion) (AC160) 44
VREF @ 1 V/ns 250 – 200 – – – – – ps 19, 20

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 75: Electrical Characteristics and AC Operating Conditions (Continued)

Notes 1–8 apply to the entire table
DDR3L DDR3L DDR3L DDR3L
-800 -1066 -1333 -1600
Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes
Data setup time Base (specifica- tDS 140 – 90 – 45 – 25 – ps 18, 19,
to DQS, DQS# tion) (AC135) 44
VREF @ 1 V/ns 275 – 250 – 180 – 160 – ps 19, 20
Data hold time Base (specifica- tDH 160 – 110 – 75 – 55 – ps 18, 19
from DQS, DQS# tion) (DC90)
VREF @ 1 V/ns 250 – 200 – 165 – 145 – ps 19, 20
Minimum data pulse width tDIPW 600 – 490 – 400 – 360 – ps 41
DQ Output Timing
DQS, DQS# to DQ skew, per ac- tDQSQ – 200 – 150 – 125 – 100 ps
cess
DQ output hold time from DQS, tQH 0.38 – 0.38 – 0.38 – 0.38 – tCK 21
DQS# (AVG)
DQ Low-Z time from CK, CK# tLZDQ –800 400 –600 300 –500 250 –450 225 ps 22, 23
DQ High-Z time from CK, CK# tHZDQ – 400 – 300 – 250 – 225 ps 22, 23
DQ Strobe Input Timing
DQS, DQS# rising to CK, CK# ris- tDQSS –0.25 0.25 –0.25 0.25 –0.25 0.25 –0.27 0.27 CK 25
ing
DQS, DQS# differential input low tDQSL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
pulse width
DQS, DQS# differential input high tDQSH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
pulse width
DQS, DQS# falling setup to CK, tDSS 0.2 – 0.2 – 0.2 – 0.18 – CK 25
CK# rising
DQS, DQS# falling hold from CK, tDSH 0.2 – 0.2 – 0.2 – 0.18 – CK 25
CK# rising
DQS, DQS# differential WRITE tWPRE 0.9 – 0.9 – 0.9 – 0.9 – CK
preamble
DQS, DQS# differential WRITE tWPST 0.3 – 0.3 – 0.3 – 0.3 – CK
postamble
DQ Strobe Output Timing
DQS, DQS# rising to/from rising tDQSCK –400 400 –300 300 –255 255 –225 225 ps 23
CK, CK#
DQS, DQS# rising to/from rising tDQSCK 1 10 1 10 1 10 1 10 ns 26
CK, CK# when DLL is disabled (DLL_DIS)
DQS, DQS# differential output tQSH 0.38 – 0.38 – 0.40 – 0.40 – CK 21
high time
DQS, DQS# differential output tQSL 0.38 – 0.38 – 0.40 – 0.40 – CK 21
low time
DQS, DQS# Low-Z time (RL - 1) tLZDQS –800 400 –600 300 –500 250 –450 225 ps 22, 23

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 75: Electrical Characteristics and AC Operating Conditions (Continued)

Notes 1–8 apply to the entire table
DDR3L DDR3L DDR3L DDR3L
-800 -1066 -1333 -1600
Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes
DQS, DQS# High-Z time (RL + tHZDQS – 400 – 300 – 250 – 225 ps 22, 23
BL/2)
DQS, DQS# differential READ pre- tRPRE 0.9 Note 0.9 Note 0.9 Note 0.9 Note CK 23, 24
amble 24 24 24 24
DQS, DQS# differential READ tRPST 0.3 Note 0.3 Note 0.3 Note 0.3 Note CK 23, 27
postamble 27 27 27 27
Command and Address Timing
DLL locking time tDLLK 512 – 512 – 512 – 512 – CK 28
CTRL, CMD, Base (specifica- tIS 215 – 140 – 80 – 60 – ps 29, 30,
ADDR tion) (AC160) 44
setup to CK,CK# VREF @ 1 V/ns 375 – 300 – 240 – 220 – ps 20, 30
CTRL, CMD, Base (specifica- tIS 365 – 290 – 205 – 185 – ps 29, 30,
ADDR tion) (AC135) 44
setup to CK,CK# VREF @ 1 V/ns 500 – 425 – 340 – 320 – ps 20, 30
CTRL, CMD, Base (specifica- tIH 285 – 210 – 150 – 130 – ps 29, 30
ADDR hold from tion) (DC90)
CK,CK# VREF @ 1 V/ns 375 – 300 – 240 – 220 – ps 20, 30
Minimum CTRL, CMD, ADDR tIPW 900 – 780 – 620 – 560 – ps 41
pulse width
ACTIVATE to internal READ or tRCD See Speed Bin Tables for tRCD ns 31
WRITE delay
PRECHARGE command period tRP See Speed Bin Tables for tRP ns 31
ACTIVATE-to-PRECHARGE com- tRAS See Speed Bin Tables for tRAS ns 31, 32
mand period
ACTIVATE-to-ACTIVATE command tRC See Speed Bin Tables for tRC ns 31, 43
period
ACTIVATE-to-AC- x4/x8 (1KB tRRD MIN = great- MIN = great- MIN = great- MIN = great- CK 31
TIVATE minimum page size) er of 4CK or er of 4CK or er of 4CK or er of 4CK or
command 10ns 7.5ns 6ns 6ns
period x16 (2KB page MIN = greater of 4CK or MIN = greater of 4CK or CK 31
size) 10ns 7.5ns
Four ACTIVATE x4/x8 (1KB tFAW 40 – 37.5 – 30 – 30 – ns 31
windows page size)
x16 (2KB page 50 – 50 – 45 – 40 – ns 31
size)
Write recovery time tWR MIN = 15ns; MAX = N/A ns 31, 32,
33,34

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 75: Electrical Characteristics and AC Operating Conditions (Continued)

Notes 1–8 apply to the entire table
DDR3L DDR3L DDR3L DDR3L
-800 -1066 -1333 -1600
Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes
Delay from start of internal tWTR MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 34
WRITE
transaction to internal READ
command
READ-to-PRECHARGE time tRTP MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 32
CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = N/A CK
Auto precharge write recovery + tDAL MIN = WR + tRP/tCK (AVG); MAX = N/A CK
precharge time
MODE REGISTER SET command tMRD MIN = 4CK; MAX = N/A CK
cycle time
MODE REGISTER SET command tMOD MIN = greater of 12CK or 15ns; MAX = N/A CK
update delay
MULTIPURPOSE REGISTER READ tMPRR MIN = 1CK; MAX = N/A CK
burst end to mode register set for
multipurpose register exit
Calibration Timing
ZQCL command: POWER-UP tZQinit 512 – 512 – 512 – 512 – CK
Long calibration and RESET op-
time eration
Normal opera- tZQoper 256 – 256 – 256 – 256 – CK
tion
ZQCS command: Short calibration tZQCS 64 – 64 – 64 – 64 – CK
time
Initialization and Reset Timing
Exit reset from CKE HIGH to a val- tXPR MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK
id command
Begin power supply ramp to tVDDPR MIN = N/A; MAX = 200 ms
power supplies
stable
RESET# LOW to power supplies tRPS MIN = 0; MAX = 200 ms
stable
RESET# LOW to I/O and RTT High- tIOZ MIN = N/A; MAX = 20 ns 35
Z
Refresh Timing
REFRESH-to-ACTIVATE or RE- tRFC – 1Gb MIN = 110; MAX = 70,200 ns
FRESH tRFC – 2Gb MIN = 160; MAX = 70,200 ns
command period tRFC – 4Gb MIN = 260; MAX = 70,200 ns
tRFC – 8Gb MIN = 350; MAX = 70,200 ns

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 75: Electrical Characteristics and AC Operating Conditions (Continued)

Notes 1–8 apply to the entire table
DDR3L DDR3L DDR3L DDR3L
-800 -1066 -1333 -1600
Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes
Maximum refresh TC ≤ 85°C – 64 (1X) ms 36
period TC > 85°C 32 (2X) ms 36
Maximum aver- TC ≤ 85°C tREFI 7.8 (64ms/8192) µs 36
age TC > 85°C 3.9 (32ms/8192) µs 36
periodic refresh
Self Refresh Timing
Exit self refresh to commands not tXS MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK
requiring a
locked DLL
Exit self refresh to commands re- tXSDLL MIN = tDLLK (MIN); MAX = N/A CK 28
quiring a locked DLL
Minimum CKE low pulse width tCKESR MIN = tCKE (MIN) + CK; MAX = N/A CK
for self refresh entry to self re-
fresh exit timing
Valid clocks after self refresh en- tCKSRE MIN = greater of 5CK or 10ns; MAX = N/A CK
try or power-down entry
Valid clocks before self refresh ex- tCKSRX MIN = greater of 5CK or 10ns; MAX = N/A CK
it,
power-down exit, or reset exit
Power-Down Timing
CKE MIN pulse width tCKE (MIN) Greater of Greater of Greater of Greater of CK
3CK or 7.5ns 3CK or 3CK or 3CK or 5ns
5.625ns 5.625ns
Command pass disable delay tCPDED MIN = 1; MAX = N/A CK
Power-down entry to power- tPD MIN = tCKE (MIN); MAX = 9 × tREFI CK
down exit timing
Begin power-down period prior tANPD WL - 1CK CK
to CKE
registered HIGH
Power-down entry period: ODT PDE Greater of tANPD or tRFC - REFRESH command to CKE CK
either LOW time
synchronous or asynchronous
Power-down exit period: ODT ei- PDX tANPD + tXPDLL CK
ther
synchronous or asynchronous
Power-Down Entry Minimum Timing
ACTIVATE command to power- tACTPDEN MIN = 1 CK
down entry

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 75: Electrical Characteristics and AC Operating Conditions (Continued)

Notes 1–8 apply to the entire table
DDR3L DDR3L DDR3L DDR3L
-800 -1066 -1333 -1600
Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes
PRECHARGE/PRECHARGE ALL tPRPDEN MIN = 1 CK
command to
power-down entry
REFRESH command to power- tREFPDEN MIN = 1 CK 37
down entry
MRS command to power-down tMRSPDEN MIN = tMOD (MIN) CK
entry
READ/READ with auto precharge tRDPDEN MIN = RL + 4 + 1 CK
command to power-down entry
WRITE command BL8 (OTF, MRS) tWRPDEN MIN = WL + 4 + tWR/tCK (AVG) CK
to power-down BC4OTF
entry BC4MRS tWRPDEN MIN = WL + 2 + tWR/tCK (AVG) CK
WRITE with auto BL8 (OTF, MRS) tWRAPDEN MIN = WL + 4 + WR + 1 CK
precharge com- BC4OTF
mand to power- BC4MRS tWRAPDEN MIN = WL + 2 + WR + 1 CK
down entry
Power-Down Exit Timing
DLL on, any valid command, or tXP MIN = greater of 3CK or MIN = greater of 3CK or CK
DLL off to 7.5ns; 6ns;
commands not requiring locked MAX = N/A MAX = N/A
DLL
Precharge power-down with DLL tXPDLL MIN = greater of 10CK or 24ns; MAX = N/A CK 28
off to
commands requiring a locked DLL
ODT Timing
RTT synchronous turn-on delay ODTLon CWL + AL - 2CK CK 38
RTT synchronous turn-off delay ODTLoff CWL + AL - 2CK CK 40
RTT turn-on from ODTL on refer- tAON –400 400 –300 300 –250 250 –225 225 ps 23, 38
ence
RTT turn-off from ODTL off refer- tAOF 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 CK 39, 40
ence
Asynchronous RTT turn-on delay tAONPD MIN = 2; MAX = 8.5 ns 38
(power-down with DLL off)
Asynchronous RTT turn-off delay tAOFPD MIN = 2; MAX = 8.5 ns 40
(power-down with DLL off)
ODT HIGH time with WRITE com- ODTH8 MIN = 6; MAX = N/A CK
mand and BL8
ODT HIGH time without WRITE ODTH4 MIN = 4; MAX = N/A CK
command or with WRITE com-
mand and BC4

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 75: Electrical Characteristics and AC Operating Conditions (Continued)

Notes 1–8 apply to the entire table
DDR3L DDR3L DDR3L DDR3L
-800 -1066 -1333 -1600
Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes
Dynamic ODT Timing
RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK
RTT(WR)-to-RTT,nom change skew - ODTLcwn4 4CK + ODTLoff CK
BC4
RTT(WR)-to-RTT,nom change skew - ODTLcwn8 6CK + ODTLoff CK
BL8
RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 CK 39
Write Leveling Timing
First DQS, DQS# rising edge tWLMRD 40 – 40 – 40 – 40 – CK
DQS, DQS# delay tWLDQSEN 25 – 25 – 25 – 25 – CK
Write leveling setup from rising tWLS 325 – 245 – 195 – 165 – ps
CK, CK#
crossing to rising DQS, DQS#
crossing
Write leveling hold from rising tWLH 325 – 245 – 195 – 165 – ps
DQS, DQS#
crossing to rising CK, CK# crossing
Write leveling output delay tWLO 0 9 0 9 0 9 0 7.5 ns
Write leveling output error tWLOE 0 2 0 2 0 2 0 2 ns

Notes: 1. AC timing parameters are valid from specified TC MIN to TC MAX values.
2. All voltages are referenced to VSS.
3. Output timings are only valid for RON34 output buffer selection.
4. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation.
The unit CK represents one clock cycle of the input clock, counting the actual clock
edges.
5. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environ-
ment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the
AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum
slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs
and 2 V/ns for differential inputs in the range between VIL(AC) and VIH(AC).
6. All timings that use time-based values (ns, µs, ms) should use tCK (AVG) to determine the
correct number of clocks (Table 75 (page 86) uses CK or tCK [AVG] interchangeably). In
the case of noninteger results, all minimum limits are to be rounded up to the nearest
whole integer, and all maximum limits are to be rounded down to the nearest whole
integer.
7. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is
the rising edge. Clock or CK refers to the CK and CK# differential crossing point when
CK is the rising edge.
8. This output load is used for all AC timing (except ODT reference timing) and slew rates.
The actual test load may be different. The output signal voltage reference point is
VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure
26 (page 78)).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

9. When operating in DLL disable mode, Micron does not warrant compliance with normal
mode timings or functionality.
10. The clock’s tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG)
MIN is the smallest clock rate allowed, with the exception of a deviation due to clock
jitter. Input clock jitter is allowed provided it does not exceed values specified and must
be of a random Gaussian distribution in nature.
11. Spread spectrum is not included in the jitter specification values. However, the input
clock can accommodate spread-spectrum at a sweep rate in the range of 20–60 kHz with
an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread
spectrum may not use a clock rate below tCK (AVG) MIN.
12. The clock’s tCH (AVG) and tCL (AVG) are the average half clock period over any 200 con-
secutive clocks and is the smallest clock half period allowed, with the exception of a de-
viation due to clock jitter. Input clock jitter is allowed provided it does not exceed values
specified and must be of a random Gaussian distribution in nature.
13. The period jitter (tJITper) is the maximum deviation in the clock period from the average
or nominal clock. It is allowed in either the positive or negative direction.
14. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one
rising edge to the following falling edge.
15. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one fall-
ing edge to the following rising edge.
16. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle
to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL
locking time.
17. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50,
is the amount of clock time allowed to accumulate consecutively away from the average
clock over n number of clock cycles.
18. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs and 2 V/ns
slew rate differential DQS, DQS#; when DQ single-ended slew rate is 2V/ns, the DQS dif-
ferential slew rate is 4V/ns.
19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transi-
tion edge to its respective data strobe signal (DQS, DQS#) crossing.
20. The setup and hold times are listed converting the base specification values (to which
derating tables apply) to VREF when the slew rate is 1 V/ns. These values, with a slew rate
of 1 V/ns, are for reference only.
21. When the device is operated with input clock jitter, this parameter needs to be derated
by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output
deratings are relative to the SDRAM input clock).
22. Single-ended signal parameter.
23. The DRAM output timing is aligned to the nominal or average clock. Most output pa-
rameters must be derated by the actual jitter error when input clock jitter is present,
even when within specification. This results in each parameter becoming larger. The fol-
lowing parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK
(MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are re-
quired to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS
(MAX), tLZDQ MAX, and tAON (MAX). The parameter tRPRE (MIN) is derated by subtract-
ing tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN).
24. The maximum preamble is bound by tLZDQS (MAX).
25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its re-
spective clock signal (CK, CK#) crossing. The specification values are not affected by the
amount of clock jitter applied, as these are relative to the clock signal crossing. These
parameters should be met whether clock jitter is present.
26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command.
27. The maximum postamble is bound by tHZDQS (MAX).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT com-
mands. In addition, after any change of latency tXPDLL, timing must be met.
29. IS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address
t

slew rate and 2 V/ns CK, CK# differential slew rate.

30. These parameters are measured from a command/address signal transition edge to its
respective clock (CK, CK#) signal crossing. The specification values are not affected by
the amount of clock jitter applied as the setup and hold times are relative to the clock
signal crossing that latches the command/address. These parameters should be met
whether clock jitter is present.
31. For these parameters, the DDR3 SDRAM device supports tnPARAM (nCK) = RU(tPARAM
[ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For exam-
ple, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifi-
cations are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will
support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are
met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are
valid even if six clocks are less than 15ns due to input clock jitter.
32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the in-
ternal PRECHARGE command until tRAS (MIN) has been satisfied.
33. When operating in DLL disable mode, the greater of 4CK or 15ns is satisfied for tWR.
34. The start of the write recovery time is defined as follows:
• For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL
• For BC4 (OTF): Rising clock edge four clock cycles after WL
• For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL
35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in
High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in exces-
sive current, depending on bus activity.
36. The refresh period is 64ms when TC is less than or equal to 85°C. This equates to an aver-
age refresh rate of 7.8125µs. However, nine REFRESH commands should be asserted at
least once every 70.3µs. When TC is greater than 85°C, the refresh period is 32ms.
37. Although CKE is allowed to be registered LOW after a REFRESH command when
tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN)

is required.
38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to
turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT
reference load is shown in Figure 20 (page 67). Designs that were created prior to JEDEC
tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maxi-
mum.
39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when
input clock jitter is present. This results in each parameter becoming larger. The parame-
ters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both
tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are

required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX).

40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT
turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is
shown in Figure 20 (page 67). This output load is used for ODT timings (see Figure 27
(page 79)).
41. Pulse width of a input signal is defined as the width between the first crossing of
VREF(DC) and the consecutive crossing of VREF(DC).
42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should
have at least one NOP command between it and another AUTO REFRESH command. Ad-
ditionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should
be followed by a PRECHARGE ALL command.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

43. DRAM devices should be evenly addressed when being accessed. Disproportionate ac-
cesses to a particular row address may result in a reduction of REFRESH characteristics or
product lifetime.
44. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and
VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/
command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min
with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min
with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 76: Electrical Characteristics and AC Operating Conditions for Speed Extensions
Notes 1–8 apply to the entire table
DDR3L-1866
Parameter Symbol Min Max Unit Notes
Clock Timing
Clock period average: DLL TC = 0°C to 85°C tCK (DLL_DIS) 8 7800 ns 9, 42
disable mode TC = >85°C to 95°C 8 3900 ns 42
Clock period average: DLL enable mode tCK (AVG) See Speed Bin Tables for ns 10, 11
tCK range allowed

High pulse width average tCH (AVG) 0.47 0.53 CK 12

Low pulse width average tCL (AVG) 0.47 0.53 CK 12
Clock period jitter DLL locked tJITper –60 60 ps 13
DLL locking tJITper,lck –50 50 ps 13
Clock absolute period tCK (ABS) MIN = tCK (AVG) MIN ps
+tJITper MIN;
MAX = tCK (AVG) MAX +
tJITper MAX

Clock absolute high pulse width tCH (ABS) 0.43 – tCK (AVG) 14
Clock absolute low pulse width tCL (ABS) 0.43 – tCK (AVG) 15
Cycle-to-cycle jitter DLL locked tJITcc 120 ps 16
DLL locking tJITcc,lck 100 ps 16
Cumulative error across 2 cycles tERR2per –88 88 ps 17
3 cycles tERR3per –105 105 ps 17
4 cycles tERR4per –117 117 ps 17
5 cycles tERR5per –126 126 ps 17
6 cycles tERR6per –133 133 ps 17
7 cycles tERR7per –139 139 ps 17
8 cycles tERR8per –145 145 ps 17
9 cycles tERR9per –150 150 ps 17
10 cycles tERR10per –154 154 ps 17
11 cycles tERR11per –158 158 ps 17
12 cycles tERR12per –161 161 ps 17
n = 13, 14 . . . 49, 50 tERRnper tERRnper MIN = (1 + ps 17
cycles 0.68ln[n]) × tJITper MIN
tERRnper MAX = (1 +

0.68ln[n]) × tJITper MAX

DQ Input Timing
Data setup time to DQS, Base (specification) @ tDS 70 – ps 18, 19
DQS# 2 V/ns (AC130)
VREF @ 2 V/ns 135 – ps 19, 20

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 76: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
DDR3L-1866
Parameter Symbol Min Max Unit Notes
Data hold time from DQS, Base (specification) @ tDH 75 – ps 18, 19
DQS# 2 V/ns (DC90)
VREF @ 2 V/ns 110 – ps 19, 20
Minimum data pulse width tDIPW 320 – ps 41
DQ Output Timing
DQS, DQS# to DQ skew, per access tDQSQ – 85 ps
DQ output hold time from DQS, DQS# tQH 0.38 – tCK (AVG) 21
DQ Low-Z time from CK, CK# tLZDQ –390 195 ps 22, 23
DQ High-Z time from CK, CK# tHZDQ – 195 ps 22, 23
DQ Strobe Input Timing
DQS, DQS# rising to CK, CK# rising tDQSS –0.27 0.27 CK 25
DQS, DQS# differential input low pulse width tDQSL 0.45 0.55 CK
DQS, DQS# differential input high pulse width tDQSH 0.45 0.55 CK
DQS, DQS# falling setup to CK, CK# rising tDSS 0.18 – CK 25
DQS, DQS# falling hold from CK, CK# rising tDSH 0.18 – CK 25
DQS, DQS# differential WRITE preamble tWPRE 0.9 – CK
DQS, DQS# differential WRITE postamble tWPST 0.3 – CK
DQ Strobe Output Timing
DQS, DQS# rising to/from rising CK, CK# tDQSCK –195 195 ps 23
DQS, DQS# rising to/from rising CK, CK# when tDQSCK 1 10 ns 26
DLL is disabled (DLL_DIS)
DQS, DQS# differential output high time tQSH 0.40 – CK 21
DQS, DQS# differential output low time tQSL 0.40 – CK 21
DQS, DQS# Low-Z time (RL - 1) tLZDQS –390 195 ps 22, 23
DQS, DQS# High-Z time (RL + BL/2) tHZDQS – 195 ps 22, 23
DQS, DQS# differential READ preamble tRPRE 0.9 Note 24 CK 23, 24
DQS, DQS# differential READ postamble tRPST 0.3 Note 27 CK 23, 27
Command and Address Timing
DLL locking time tDLLK 512 – CK 28
CTRL, CMD, ADDR Base (specification) tIS 65 – ps 29, 30, 44
setup to CK,CK# VREF @ 1 V/ns (AC135) 200 – ps 20, 30
CTRL, CMD, ADDR Base (specification) tIS 150 – ps 29, 30, 44
setup to CK,CK# VREF @ 1 V/ns (AC125) 275 – ps 20, 30
CTRL, CMD, ADDR hold Base (specification) tIH 110 – ps 29, 30
from CK,CK# VREF @ 1 V/ns (DC90) 200 – ps 20, 30
Minimum CTRL, CMD, ADDR pulse width tIPW 535 – ps 41

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 76: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
DDR3L-1866
Parameter Symbol Min Max Unit Notes
ACTIVATE to internal READ or WRITE delay tRCD See Speed Bin Tables for ns 31
tRCD

PRECHARGE command period tRP See Speed Bin Tables for ns 31

tRP

ACTIVATE-to-PRECHARGE command period tRAS See Speed Bin Tables for ns 31, 32
tRAS

ACTIVATE-to-ACTIVATE command period tRC See Speed Bin Tables for ns 31, 43
tRC

ACTIVATE-to-ACTIVATE 1KB page size tRRD MIN = greater of 4CK or CK 31

minimum command period 5ns
2KB page size MIN = greater of 4CK or CK 31
6ns
Four ACTIVATE 1KB page size tFAW 27 – ns 31
windows 2KB page size 35 – ns 31
Write recovery time tWR MIN = 15ns; MAX = N/A ns 31, 32, 33
Delay from start of internal WRITE transaction to tWTR MIN = greater of 4CK or CK 31, 34
internal READ command 7.5ns; MAX = N/A
READ-to-PRECHARGE time tRTP MIN = greater of 4CK or CK 31, 32
7.5ns; MAX = N/A
CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = N/A CK
Auto precharge write recovery + precharge time tDAL MIN = WR + tRP/tCK
(AVG); CK
MAX = N/A
MODE REGISTER SET command cycle time tMRD MIN = 4CK; MAX = N/A CK
MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or CK
15ns; MAX = N/A
MULTIPURPOSE REGISTER READ burst end to tMPRR MIN = 1CK; MAX = N/A CK
mode register set for multipurpose register exit
Calibration Timing
ZQCL command: Long cali- POWER-UP and RE- tZQinit MIN = N/A CK
bration time SET operation MAX = MAX(512nCK,
640ns)
Normal operation tZQoper MIN = N/A CK
MAX = MAX(256nCK,
320ns)
ZQCS command: Short calibration time MIN = N/A CK
MAX = MAX(64nCK, 80ns) tZQCS
Initialization and Reset Timing
Exit reset from CKE HIGH to a valid command tXPR MIN = greater of 5CK or CK
tRFC + 10ns; MAX = N/A

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 76: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
DDR3L-1866
Parameter Symbol Min Max Unit Notes
Begin power supply ramp to power supplies sta- tVDDPR MIN = N/A; MAX = 200 ms
ble
RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms
RESET# LOW to I/O and RTT High-Z tIOZ MIN = N/A; MAX = 20 ns 35
Refresh Timing
REFRESH-to-ACTIVATE or REFRESH tRFC – 1Gb MIN = 110; MAX = 70,200 ns
command period tRFC – 2Gb MIN = 160; MAX = 70,200 ns
tRFC – 4Gb MIN = 260; MAX = 70,200 ns
tRFC – 8Gb MIN = 350; MAX = 70,200 ns
Maximum refresh TC ≤ 85°C – 64 (1X) ms 36
period TC > 85°C 32 (2X) ms 36
Maximum average TC ≤ 85°C tREFI 7.8 (64ms/8192) µs 36
periodic refresh TC > 85°C 3.9 (32ms/8192) µs 36
Self Refresh Timing
Exit self refresh to commands not requiring a tXS MIN = greater of 5CK or CK
locked DLL tRFC + 10ns; MAX = N/A

Exit self refresh to commands requiring a tXSDLL MIN = tDLLK (MIN); CK 28

locked DLL MAX = N/A
Minimum CKE low pulse width for self refresh tCKESR MIN = tCKE (MIN) + CK; CK
entry to self refresh exit timing MAX = N/A
Valid clocks after self refresh entry or power- tCKSRE MIN = greater of 5CK or CK
down entry 10ns; MAX = N/A
Valid clocks before self refresh exit, tCKSRX MIN = greater of 5CK or CK
power-down exit, or reset exit 10ns; MAX = N/A
Power-Down Timing
CKE MIN pulse width tCKE (MIN) Greater of 3CK or 5ns CK
Command pass disable delay tCPDED MIN = 2; CK
MAX = N/A
Power-down entry to power-down exit timing tPD MIN = tCKE (MIN); CK
MAX = 9 × tREFI
Begin power-down period prior to CKE tANPD WL - 1CK CK
registered HIGH
Power-down entry period: ODT either PDE Greater of tANPD or tRFC - CK
synchronous or asynchronous REFRESH command to CKE
LOW time
Power-down exit period: ODT either PDX tANPD + tXPDLL CK
synchronous or asynchronous
Power-Down Entry Minimum Timing
ACTIVATE command to power-down entry tACTPDEN MIN = 2 CK

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 76: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
DDR3L-1866
Parameter Symbol Min Max Unit Notes
PRECHARGE/PRECHARGE ALL command to tPRPDEN MIN = 2 CK
power-down entry
REFRESH command to power-down entry tREFPDEN MIN = 2 CK 37
MRS command to power-down entry tMRSPDEN MIN = tMOD (MIN) CK
READ/READ with auto precharge command to tRDPDEN MIN = RL + 4 + 1 CK
power-down entry
WRITE command to pow- BL8 (OTF, MRS) tWRPDEN MIN = WL + 4 + CK
er-down entry BC4OTF tWR/tCK (AVG)

BC4MRS tWRPDEN MIN = WL + 2 + CK

tWR/tCK (AVG)

WRITE with auto pre- BL8 (OTF, MRS) tWRAPDEN MIN = WL + 4 + WR + 1 CK

charge command to pow- BC4OTF
er-down entry BC4MRS tWRAPDEN MIN = WL + 2 + WR + 1 CK
Power-Down Exit Timing
DLL on, any valid command, or DLL off to tXP MIN = greater of 3CK or CK
commands not requiring locked DLL 6ns;
MAX = N/A
Precharge power-down with DLL off to tXPDLL MIN = greater of 10CK or CK 28
commands requiring a locked DLL 24ns; MAX = N/A
ODT Timing
RTT synchronous turn-on delay ODTL on CWL + AL - 2CK CK 38
RTT synchronous turn-off delay ODTL off CWL + AL - 2CK CK 40
RTT turn-on from ODTL on reference tAON –195 195 ps 23, 38
RTT turn-off from ODTL off reference tAOF 0.3 0.7 CK 39, 40
Asynchronous RTT turn-on delay tAONPD MIN = 2; MAX = 8.5 ns 38
(power-down with DLL off)
Asynchronous RTT turn-off delay tAOFPD MIN = 2; MAX = 8.5 ns 40
(power-down with DLL off)
ODT HIGH time with WRITE command and BL8 ODTH8 MIN = 6; MAX = N/A CK
ODT HIGH time without WRITE command or with ODTH4 MIN = 4; MAX = N/A CK
WRITE command and BC4
Dynamic ODT Timing
RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK
RTT(WR)-to-RTT,nom change skew - BC4 ODTLcwn4 4CK + ODTLoff CK
RTT(WR)-to-RTT,nom change skew - BL8 ODTLcwn8 6CK + ODTLoff CK
RTT dynamic change skew tADC 0.3 0.7 CK 39
Write Leveling Timing
First DQS, DQS# rising edge tWLMRD 40 – CK
DQS, DQS# delay tWLDQSEN 25 – CK

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

Table 76: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
DDR3L-1866
Parameter Symbol Min Max Unit Notes
Write leveling setup from rising CK, CK# tWLS 140 – ps
crossing to rising DQS, DQS# crossing
Write leveling hold from rising DQS, DQS# tWLH 140 – ps
crossing to rising CK, CK# crossing
Write leveling output delay tWLO 0 7.5 ns
Write leveling output error tWLOE 0 2 ns

Notes: 1. AC timing parameters are valid from specified TC MIN to TC MAX values.
2. All voltages are referenced to VSS.
3. Output timings are only valid for RON34 output buffer selection.
4. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation.
The unit CK represents one clock cycle of the input clock, counting the actual clock
edges.
5. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environ-
ment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the
AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum
slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs
(DQs are at 2V/ns for DDR3-1866) and 2 V/ns for differential inputs in the range between
VIL(AC) and VIH(AC).
6. All timings that use time-based values (ns, µs, ms) should use tCK (AVG) to determine the
correct number of clocks (Table 76 (page 96) uses CK or tCK [AVG] interchangeably). In
the case of noninteger results, all minimum limits are to be rounded up to the nearest
whole integer, and all maximum limits are to be rounded down to the nearest whole
integer.
7. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is
the rising edge. Clock or CK refers to the CK and CK# differential crossing point when
CK is the rising edge.
8. This output load is used for all AC timing (except ODT reference timing) and slew rates.
The actual test load may be different. The output signal voltage reference point is
VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure
26 (page 78)).
9. When operating in DLL disable mode, Micron does not warrant compliance with normal
mode timings or functionality.
10. The clock’s tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG)
MIN is the smallest clock rate allowed, with the exception of a deviation due to clock
jitter. Input clock jitter is allowed provided it does not exceed values specified and must
be of a random Gaussian distribution in nature.
11. Spread spectrum is not included in the jitter specification values. However, the input
clock can accommodate spread-spectrum at a sweep rate in the range of 20–60 kHz with
an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread
spectrum may not use a clock rate below tCK (AVG) MIN.
12. The clock’s tCH (AVG) and tCL (AVG) are the average half clock period over any 200 con-
secutive clocks and is the smallest clock half period allowed, with the exception of a de-
viation due to clock jitter. Input clock jitter is allowed provided it does not exceed values
specified and must be of a random Gaussian distribution in nature.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

13. The period jitter (tJITper) is the maximum deviation in the clock period from the average
or nominal clock. It is allowed in either the positive or negative direction.
14. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one
rising edge to the following falling edge.
15. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one fall-
ing edge to the following rising edge.
16. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle
to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL
locking time.
17. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50,
is the amount of clock time allowed to accumulate consecutively away from the average
clock over n number of clock cycles.
18. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs (DQs are at
2V/ns for DDR3-1866) and 2 V/ns slew rate differential DQS, DQS#; when DQ single-
ended slew rate is 2V/ns, the DQS differential slew rate is 4V/ns.
19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transi-
tion edge to its respective data strobe signal (DQS, DQS#) crossing.
20. The setup and hold times are listed converting the base specification values (to which
derating tables apply) to VREF when the slew rate is 1 V/ns (DQs are at 2V/ns for
DDR3-1866). These values, with a slew rate of 1 V/ns (DQs are at 2V/ns for DDR3-1866),
are for reference only.
21. When the device is operated with input clock jitter, this parameter needs to be derated
by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output
deratings are relative to the SDRAM input clock).
22. Single-ended signal parameter.
23. The DRAM output timing is aligned to the nominal or average clock. Most output pa-
rameters must be derated by the actual jitter error when input clock jitter is present,
even when within specification. This results in each parameter becoming larger. The fol-
lowing parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK
(MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are re-
quired to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS
(MAX), tLZDQ (MAX), and tAON (MAX). The parameter tRPRE (MIN) is derated by sub-
tracting tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN).
24. The maximum preamble is bound by tLZDQS (MAX).
25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its re-
spective clock signal (CK, CK#) crossing. The specification values are not affected by the
amount of clock jitter applied, as these are relative to the clock signal crossing. These
parameters should be met whether clock jitter is present.
26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command.
27. The maximum postamble is bound by tHZDQS (MAX).
28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT com-
mands. In addition, after any change of latency tXPDLL, timing must be met.
29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address
slew rate and 2 V/ns CK, CK# differential slew rate.
30. These parameters are measured from a command/address signal transition edge to its
respective clock (CK, CK#) signal crossing. The specification values are not affected by
the amount of clock jitter applied as the setup and hold times are relative to the clock
signal crossing that latches the command/address. These parameters should be met
whether clock jitter is present.
31. For these parameters, the DDR3 SDRAM device supports tnPARAM (nCK) = RU(tPARAM
[ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For exam-
ple, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifi-
cations are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will

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 2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions

support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are
met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are
valid even if six clocks are less than 15ns due to input clock jitter.
32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the in-
ternal PRECHARGE command until tRAS (MIN) has been satisfied.
33. When operating in DLL disable mode, the greater of 4CK or 15ns is satisfied for tWR.
34. The start of the write recovery time is defined as follows:
• For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL
• For BC4 (OTF): Rising clock edge four clock cycles after WL
• For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL
35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in
High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in exces-
sive current, depending on bus activity.
36. The refresh period is 64ms when TC is less than or equal to 85°C. This equates to an aver-
age refresh rate of 7.8125µs. However, nine REFRESH commands should be asserted at
least once every 70.3µs. When TC is greater than 85°C, the refresh period is 32ms.
37. Although CKE is allowed to be registered LOW after a REFRESH command when
tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN)

is required.
38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to
turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT
reference load is shown in Figure 20 (page 67). Designs that were created prior to JEDEC
tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maxi-
mum.
39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when
input clock jitter is present. This results in each parameter becoming larger. The parame-
ters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both
tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are

required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX).

40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT
turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is
shown in Figure 20 (page 67). This output load is used for ODT timings (see Figure 27
(page 79)).
41. Pulse width of a input signal is defined as the width between the first crossing of
VREF(DC) and the consecutive crossing of VREF(DC).
42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should
have at least one NOP command between it and another AUTO REFRESH command. Ad-
ditionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should
be followed by a PRECHARGE ALL command.
43. DRAM devices should be evenly addressed when being accessed. Disproportionate ac-
cesses to a particular row address may result in a reduction of REFRESH characteristics or
product lifetime.
44. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and
VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/
command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min
with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min
with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating

Command and Address Setup, Hold, and Derating

The total tIS (setup time) and tIH (hold time) required is calculated by adding the data
sheet tIS (base) and tIH (base) values (see Table 77; values come from the Electrical
Characteristics and AC Operatioing Conditions Table to the ΔtIS and ΔtIH derating val-
ues (see Table 78 (page 105), Table 79 (page 105) or Table 80 (page 106)) respectively.
Example: tIS (total setup time) = tIS (base) + ΔtIS. For a valid transition, the input signal
has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see Table 81 (page 106)).
Although the total setup time for slow slew rates might be negative (for example, a valid
input signal will not have reached V IH(AC)/VIL(AC) at the time of the rising clock transi-
tion), a valid input signal is still required to complete the transition and to reach
VIH(AC)/VIL(AC) (see Figure 11 (page 56) for input signal requirements). For slew rates that
fall between the values listed in Table 78 (page 105) and Table 80 (page 106), the derat-
ing values may be obtained by linear interpolation.
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tIS) nominal slew rate
for a falling signal is defined as the slew rate between the last crossing of V REF(DC) and
the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal slew
rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for derat-
ing value (see Figure 30 (page 107)). If the actual signal is later than the nominal slew
rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a tangent
line to the actual signal from the AC level to the DC level is used for derating value (see
Figure 32 (page 109)).
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tIH) nominal slew rate
for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min and
the first crossing of V REF(DC). If the actual signal is always later than the nominal slew
rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for derat-
ing value (see Figure 31 (page 108)). If the actual signal is earlier than the nominal slew
rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a tangent
line to the actual signal from the DC level to the V REF(DC) level is used for derating value
(see Figure 33 (page 110)).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating

Table 77: DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced – AC/DC-Based

Symbol 800 1066 1333 1600 1866 Unit Reference

tIS(base, AC160) 215 140 80 60 – ps VIH(AC)/VIL(AC)
tIS(base, AC135) 365 290 205 185 65 ps VIH(AC)/VIL(AC)
tIS(base, AC125) – – – – 150 ps VIH(AC)/VIL(AC)
tIH(base, DC90) 285 210 150 130 110 ps VIH(DC)/VIL(DC)

Table 78: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC160/DC90-Based

ΔtIS, ΔtIH Derating (ps) – AC/DC-Based

CK, CK# Differential Slew Rate
CMD/ADDR
Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
V/ns ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
2.0 80 45 80 45 80 45 88 53 96 61 104 69 112 79 120 95
1.5 53 30 53 30 53 30 61 38 69 46 77 54 85 64 93 80
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 –1 –3 –1 –3 –1 –3 7 5 15 13 23 21 31 31 39 47
0.8 –3 –8 –3 –8 –3 –8 5 1 13 9 21 17 29 27 37 43
0.7 –5 –13 –5 –13 –5 –13 3 –5 11 3 19 11 27 21 35 37
0.6 –8 –20 –8 –20 –8 –20 0 –12 8 –4 16 4 24 14 32 30
0.5 –20 –30 –20 –30 –20 –30 –12 –22 –4 –14 4 –6 12 4 20 20
0.4 –40 –45 –40 –45 –40 –45 –32 –37 –24 –29 –16 –21 –8 –11 0 5

Table 79: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC135/DC90-Based

ΔtIS, ΔtIH Derating (ps) – AC/DC-Based

CK, CK# Differential Slew Rate
CMD/ADDR
Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
V/ns ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
2.0 68 45 68 45 68 45 76 53 84 61 92 69 100 79 108 95
1.5 45 30 45 30 45 30 53 38 61 46 69 54 77 64 85 80
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 2 –3 2 –3 2 –3 10 5 18 13 26 21 34 31 42 47
0.8 3 –8 3 –8 3 –8 11 1 19 9 27 17 35 27 43 43
0.7 6 –13 6 –13 6 –13 14 –5 22 3 30 11 38 21 46 37
0.6 9 –20 9 –20 9 –20 17 –12 25 –4 33 4 41 14 49 30
0.5 5 –30 5 –30 5 –30 13 –22 21 –14 29 –6 37 4 45 20
0.4 –3 –45 –3 –45 –3 –45 6 –37 14 –29 22 –21 30 –11 38 5

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 2Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating

Table 80: DDR3L-1866 Derating Values for tIS/tIH – AC125/DC90-Based

ΔtIS, ΔtIH Derating (ps) – AC/DC-Based

CK, CK# Differential Slew Rate
CMD/ADDR
Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
V/ns ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
2.0 63 45 63 45 63 45 71 53 79 61 87 69 95 79 103 95
1.5 42 30 42 30 42 30 50 38 58 46 66 54 74 64 82 80
1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50
0.9 3 –3 3 –3 3 –3 11 5 19 13 27 21 35 31 43 47
0.8 6 –8 6 –8 6 –8 14 1 22 9 30 17 38 27 46 43
0.7 10 –13 10 –13 10 –13 18 –5 26 3 34 11 42 21 50 37
0.6 16 –20 16 –20 16 –20 24 –12 32 –4 40 4 48 14 56 30
0.5 15 –30 15 –30 15 –30 23 –22 31 –14 39 –6 47 4 55 20
0.4 13 –45 13 –45 13 –45 21 –37 29 –29 37 –21 45 –11 53 5

Table 81: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL[AC]) for Valid ADD/CMD
Transition

DDR3L-800/1066/1333/1600 DDR3L-1866
Slew Rate (V/ns) tVAC at 160mV (ps) tVAC at 135mV (ps) tVAC at 135mV (ps) tVAC at 125mV (ps)
>2.0 200 213 200 205
2.0 200 213 200 205
1.5 173 190 178 184
1.0 120 145 133 143
0.9 102 130 118 129
0.8 80 111 99 111
0.7 51 87 75 89
0.6 13 55 43 59
0.5 Note 1 10 Note 1 18
<0.5 Note 1 10 Note 1 18

Note: 1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input
signal shall become equal to or less than VIL(AC) level.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating

Figure 30: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock)
tIS tIH tIS tIH

CK

CK#

DQS#

DQS

VDDQ

tVAC

VIH(AC)min
VREF to AC
region
VIH(DC)min

Nominal
slew rate

VREF(DC)

Nominal
slew rate

VIL(DC)max
VREF to AC
region
VIL(AC)max

tVAC

VSS

∆TF ∆TR

Setup slew rate VREF(DC) - VIL(AC)max Setup slew rate VIH(AC)min - VREF(DC)
falling signal = rising signal =
∆TF ∆TR

Note: 1. The clock and the strobe are drawn on different time scales.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating

Figure 31: Nominal Slew Rate for tIH (Command and Address – Clock)

tIS tIH tIS tIH

CK

CK#

DQS#

DQS

VDDQ

VIH(AC)min

VIH(DC)min

DC to VREF Nominal
region slew rate

VREF(DC)

Nominal DC to VREF
slew rate region

VIL(DC)max

VIL(AC)max

VSS

ΔTR ΔTF

Hold slew rate VREF(DC) - VIL(DC)max Hold slew rate VIH(DC)min - VREF(DC)
rising signal =
ΔTR falling signal = ΔTF

Note: 1. The clock and the strobe are drawn on different time scales.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating

Figure 32: Tangent Line for tIS (Command and Address – Clock)
tIS tIH tIS tIH

CK

CK#

DQS#

DQS

VDDQ
tVAC
Nominal
line

VIH(AC)min
VREF to AC
region
VIH(DC)min

Tangent
line

VREF(DC)
Tangent
line

VIL(DC)max
VREF to AC
region
VIL(AC)max

Nominal
line
tVAC ∆TR
VSS

Setup slew rate Tangent line (VIH(DC)min - VREF(DC))

rising signal =
∆TR

∆TF
Setup slew rate Tangent line (VREF(DC) - VIL(AC)max)
falling signal =
∆TF

Note: 1. The clock and the strobe are drawn on different time scales.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating

Figure 33: Tangent Line for tIH (Command and Address – Clock)

tIS tIH tIS tIH

CK

CK#

DQS#

DQS

VDDQ

VIH(AC)min
Nominal
line

VIH(DC)min

DC to VREF
region Tangen t
line

VREF(DC)

Tangen t
DC to VREF line
region
Nominal
line
VIL( DC)max

VIL( AC)max

VSS

ΔTR ΔTR

Hold slew rate Tangent line (VREF(DC) - VIL(DC)max)

rising signal =
ΔTR

Hold slew rate Tangent line (VIH(DC)min - VREF(DC))

falling signal =
ΔTF

Note: 1. The clock and the strobe are drawn on different time scales.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating

Data Setup, Hold, and Derating

The total tDS (setup time) and tDH (hold time) required is calculated by adding the data
sheet tDS (base) and tDH (base) values (see Table 82 (page 112); values come from the
Electrical Characteristics and AC Operatioing Conditions Table to the ΔtDS and ΔtDH
derating values (see Table 83 (page 112)), Table 84 (page 112)) or Table 84 (page 112))
respectively. Example: tDS (total setup time) = tDS (base) + ΔtDS. For a valid transition,
the input signal has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see Table
86 (page 115)).
Although the total setup time for slow slew rates might be negative (for example, a valid
input signal will not have reached V IH(AC)/VIL(AC)) at the time of the rising clock transi-
tion), a valid input signal is still required to complete the transition and to reach
VIH/VIL(AC). For slew rates that fall between the values listed in Table 83 (page 112)), Ta-
ble 84 (page 112)) or Table 84 (page 112), the derating values may obtained by linear
interpolation.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tDS) nominal slew
rate for a falling signal is defined as the slew rate between the last crossing of V REF(DC)
and the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal
slew rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for
derating value (see Figure 34 (page 116)). If the actual signal is later than the nominal
slew rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a
tangent line to the actual signal from the AC level to the DC level is used for derating
value (see Figure 36 (page 118)).
Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tDH) nominal slew
rate for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min
and the first crossing of V REF(DC). If the actual signal is always later than the nominal
slew rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for
derating value (see Figure 35 (page 117)). If the actual signal is earlier than the nominal
slew rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a
tangent line to the actual signal from the DC-to-VREF(DC) region is used for derating val-
ue (see Figure 37 (page 119)).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating

Table 82: DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based

Symbol 800 1066 1333 1600 1866 Unit Reference

tDS (base) AC160 90 40 – – – ps VIH(AC)/VIL(AC)
tDS (base) AC135 140 90 45 25 – ps
tDS (base) AC130 - - - - 70 ps
tDH (base) DC90 160 110 75 55 - ps
tDH (base) DC90 - - - - 75 ps
Slew Rate Referenced 1 1 1 1 2 V/ns

Table 83: DDR3L Derating Values for tDS/tDH – AC160/DC90-Based

ΔtDS, ΔtDH Derating (ps) – AC/DC-Based

DQS, DQS# Differential Slew Rate

DQ Slew 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Rate V/ns ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
2.0 80 45 80 45 80 45
1.5 53 30 53 30 53 30 61 38
1.0 0 0 0 0 0 0 8 8 16 16
0.9 –1 –3 –1 –3 7 5 15 13 23 21
0.8 –3 –8 5 1 13 9 21 17 29 27
0.7 –3 –5 11 3 19 11 27 21 35 37
0.6 8 –4 16 4 24 14 32 30
0.5 4 6 12 4 20 20
0.4 –8 –11 0 5

Table 84: DDR3L Derating Values for tDS/tDH – AC135/DC100-Based

ΔtDS, ΔtDH Derating (ps) – AC/DC-Based

DQS, DQS# Differential Slew Rate

DQ Slew 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Rate V/ns ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
2.0 68 45 68 45 68 45
1.5 45 30 45 30 45 30 53 38
1.0 0 0 0 0 0 0 8 8 16 16
0.9 2 –3 2 –3 10 5 18 13 26 21
0.8 3 –8 11 1 19 9 27 17 35 27
0.7 14 –5 22 3 30 11 38 21 46 37
0.6 25 –4 33 4 41 14 49 30
0.5 39 –6 37 4 45 20

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 2Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating

Table 84: DDR3L Derating Values for tDS/tDH – AC135/DC100-Based (Continued)

ΔtDS, ΔtDH Derating (ps) – AC/DC-Based

DQS, DQS# Differential Slew Rate

DQ Slew 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
Rate V/ns ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
0.4 30 –11 38 5

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Table 85: DDR3L Derating Values for tDS/tDH – AC130/DC100-Based at 2V/ns

Shaded cells indicate slew rate combinations not supported
ΔtDS, ΔtDH Derating (ps) – AC/DC-Based
DQS, DQS# Differential Slew Rate
DQ Slew Rate V/ns

8.0 V/ns 7.0 V/ns 6.0 V/ns 5.0 V/ns 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns

Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ Δ
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH

4.0 33 23 33 23 33 23
3.5 28 19 28 19 28 19 28 19
3.0 22 15 22 15 22 15 22 15 22 15
2.5 13 9 13 9 13 9 13 9 13 9
2.0 0 0 0 0 0 0 0 0 0 0
1.5 –22 –15 –22 –15 –22 –15 –22 –15 –14 –7
1.0 –65 –45 –65 –45 –65 –45 –57 –37 –49 –29
0.9 –62 –48 –62 –48 –54 –40 –46 –32 –38 –24
114

0.8 –61 –53 –53 –45 –45 –37 –37 –29 –29 –19
0.7 –49 –50 –41 -42 –33 –34 –25 –24 –17 –8
0.6 –37 -49 –29 –41 –21 –31 –13 –15
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0.5 –31 –51 –23 –41 –15 –25

0.4 –28 –56 –20 –40

Data Setup, Hold, and Derating

2Gb: x4, x8, x16 DDR3L SDRAM
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 2Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating

Table 86: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition

DDR3L-800/1066 160mV DDR3L-800/1066/1333 DDR3L-1866 130mV

Slew Rate (V/ns) (ps) min 135mV (ps) min (ps) min
>2.0 165 113 95
2.0 165 113 95
1.5 138 90 73
1.0 85 45 30
0.9 67 30 16
0.8 45 11 Note1
0.7 16 Note1 –
0.6 Note1 Note1 –
0.5 Note1 Note1 –
<0.5 Note1 Note1 –

Note: 1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input
signal shall become equal to or less than VIL(AC) level.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating

Figure 34: Nominal Slew Rate and tVAC for tDS (DQ – Strobe)
CK

CK#

DQS#

DQS

tDS tDH tDS tDH

VDDQ

tVAC

VIH(AC)min

VREF to AC
region

VIH(DC)min
Nominal
slew rate

VREF(DC)

Nominal
slew rate

VIL(DC)max
VREF to AC
region

VIL(AC)max

tVAC

VSS

ΔTF ΔTR

Setup slew rate VREF(DC) - VIL(AC)max Setup slew rate VIH(AC)min - VREF(DC)
falling signal = rising signal =
ΔTF ΔTR

Note: 1. The clock and the strobe are drawn on different time scales.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating

Figure 35: Nominal Slew Rate for tDH (DQ – Strobe)

CK

CK#

DQS#

DQS

tDS tDH tDS tDH

VDDQ

VIH(AC)min

VIH(DC)min
Nominal
DC to VREF slew rate
region

VREF(DC)
Nominal
slew rate
DC to VREF
region

VIL(DC)max

VIL(AC)max

VSS

ΔTR ΔTF

Hold slew rate VREF(DC) - VIL(DC)max Hold slew rate VIL(DC)min - VREF(DC)
rising signal = falling signal =
ΔTR ΔTF

Note: 1. The clock and the strobe are drawn on different time scales.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating

Figure 36: Tangent Line for tDS (DQ – Strobe)

CK

CK#

DQS#

DQS
tDS tDH tDS tDH

VDDQ
tVAC
Nominal
line

VIH(AC)min

VREF to AC
region
VIH(DC)min

Tangent
line

VREF(DC)

Tangent
line

VIL(DC)max

VREF to AC
region

VIL(AC)max

Nominal
line
tVAC ΔTR
VSS

Setup slew rate Tangent line (VIH(AC)min - VREF(DC))

rising signal =
ΔTR

ΔTF Setup slew rate Tangent line (VREF(DC) - VIL(AC)max)

falling signal =
ΔTF

Note: 1. The clock and the strobe are drawn on different time scales.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating

Figure 37: Tangent Line for tDH (DQ – Strobe)

CK

CK#

DQS#

DQS
tDS tDH tDS tDH

VDDQ

VIH(AC)min
Nominal
line

VIH(DC)min

DC to VREF
region Tangent
line

VREF(DC)

Tangent Nominal
DC to VREF
line line
region

VIL(DC)max

VIL(AC)max

VSS

ΔTR ΔTF

Hold slew rate Tangent line (VREF(DC) - VIL(DC)max)

rising signal = ΔTR

Hold slew rate Tangent line (VIH(DC)min - VREF(DC))

falling signal =
ΔTF

Note: 1. The clock and the strobe are drawn on different time scales.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands – Truth Tables

Commands – Truth Tables

Table 87: Truth Table – Command

Notes 1–5 apply to the entire table
CKE
Prev. Next BA A[11,
Function Symbol Cycle Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 9:0] Notes
MODE REGISTER SET MRS H H L L L L BA OP code
REFRESH REF H H L L L H V V V V V
Self refresh entry SRE H L L L L H V V V V V 6
Self refresh exit SRX L H H V V V V V V V V 6, 7
L H H H
Single-bank PRECHARGE PRE H H L L H L BA V V L V
PRECHARGE all banks PREA H H L L H L V V H V
Bank ACTIVATE ACT H H L L H H BA Row address (RA)
WRITE BL8MRS, WR H H L H L L BA RFU V L CA 8
BC4MRS
BC4OTF WRS4 H H L H L L BA RFU L L CA 8
BL8OTF WRS8 H H L H L L BA RFU H L CA 8
WRITE BL8MRS, WRAP H H L H L L BA RFU V H CA 8
with auto BC4MRS
precharge BC4OTF WRAPS4 H H L H L L BA RFU L H CA 8
BL8OTF WRAPS8 H H L H L L BA RFU H H CA 8
READ BL8MRS, RD H H L H L H BA RFU V L CA 8
BC4MRS
BC4OTF RDS4 H H L H L H BA RFU L L CA 8
BL8OTF RDS8 H H L H L H BA RFU H L CA 8
READ BL8MRS, RDAP H H L H L H BA RFU V H CA 8
with auto BC4MRS
precharge BC4OTF RDAPS4 H H L H L H BA RFU L H CA 8
BL8OTF RDAPS8 H H L H L H BA RFU H H CA 8
NO OPERATION NOP H H L H H H V V V V V 9
Device DESELECTED DES H H H X X X X X X X X 10
Power-down entry PDE H L L H H H V V V V V 6
H V V V
Power-down exit PDX L H L H H H V V V V V 6, 11
H V V V
ZQ CALIBRATION LONG ZQCL H H L H H L X X X H X 12
ZQ CALIBRATION SHORT ZQCS H H L H H L X X X L X

Notes: 1. Commands are defined by the states of CS#, RAS#, CAS#, WE#, and CKE at the rising
edge of the clock. The MSB of BA, RA, and CA are device-, density-, and configuration-
dependent.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands – Truth Tables

2. RESET# is enabled LOW and used only for asynchronous reset. Thus, RESET# must be
held HIGH during any normal operation.
3. The state of ODT does not affect the states described in this table.
4. Operations apply to the bank defined by the bank address. For MRS, BA selects one of
four mode registers.
5. “V” means “H” or “L” (a defined logic level), and “X” means “Don’t Care.”
6. See Table 88 (page 122) for additional information on CKE transition.
7. Self refresh exit is asynchronous.
8. Burst READs or WRITEs cannot be terminated or interrupted. MRS (fixed) and OTF BL/BC
are defined in MR0.
9. The purpose of the NOP command is to prevent the DRAM from registering any unwan-
ted commands. A NOP will not terminate an operation that is executing.
10. The DES and NOP commands perform similarly.
11. The power-down mode does not perform any REFRESH operations.
12. ZQ CALIBRATION LONG is used for either ZQinit (first ZQCL command during initializa-
tion) or ZQoper (ZQCL command after initialization).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands – Truth Tables

Table 88: Truth Table – CKE

Notes 1–2 apply to the entire table; see Table 87 (page 120) for additional command details
CKE
Previous Cycle4 Present Cycle4 Command5
Current State3 (n - 1) (n) (RAS#, CAS#, WE#, CS#) Action5 Notes
Power-down L L “Don’t Care” Maintain power-down
L H DES or NOP Power-down exit
Self refresh L L “Don’t Care” Maintain self refresh
L H DES or NOP Self refresh exit
Bank(s) active H L DES or NOP Active power-down entry
Reading H L DES or NOP Power-down entry
Writing H L DES or NOP Power-down entry
Precharging H L DES or NOP Power-down entry
Refreshing H L DES or NOP Precharge power-down entry
All banks idle H L DES or NOP Precharge power-down entry 6
H L REFRESH Self refresh

Notes: 1. All states and sequences not shown are illegal or reserved unless explicitly described
elsewhere in this document.
2. tCKE (MIN) means CKE must be registered at multiple consecutive positive clock edges.
CKE must remain at the valid input level the entire time it takes to achieve the required
number of registration clocks. Thus, after any CKE transition, CKE may not transition
from its valid level during the time period of tIS + tCKE (MIN) + tIH.
3. Current state = The state of the DRAM immediately prior to clock edge n.
4. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the
previous clock edge.
5. COMMAND is the command registered at the clock edge (must be a legal command as
defined in Table 87 (page 120)). Action is a result of COMMAND. ODT does not affect
the states described in this table and is not listed.
6. Idle state = All banks are closed, no data bursts are in progress, CKE is HIGH, and all tim-
ings from previous operations are satisfied. All self refresh exit and power-down exit pa-
rameters are also satisfied.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands

Commands
DESELECT
The DESELT (DES) command (CS# HIGH) prevents new commands from being execu-
ted by the DRAM. Operations already in progress are not affected.

NO OPERATION
The NO OPERATION (NOP) command (CS# LOW) prevents unwanted commands from
being registered during idle or wait states. Operations already in progress are not affec-
ted.

ZQ CALIBRATION LONG
The ZQ CALIBRATION LONG (ZQCL) command is used to perform the initial calibra-
tion during a power-up initialization and reset sequence (see Figure 46 (page 139)).
This command may be issued at any time by the controller, depending on the system
environment. The ZQCL command triggers the calibration engine inside the DRAM. Af-
ter calibration is achieved, the calibrated values are transferred from the calibration en-
gine to the DRAM I/O, which are reflected as updated RON and ODT values.
The DRAM is allowed a timing window defined by either tZQinit or tZQoper to perform
a full calibration and transfer of values. When ZQCL is issued during the initialization
sequence, the timing parameter tZQinit must be satisfied. When initialization is com-
plete, subsequent ZQCL commands require the timing parameter tZQoper to be satis-
fied.

ZQ CALIBRATION SHORT
The ZQ CALIBRATION SHORT (ZQCS) command is used to perform periodic calibra-
tions to account for small voltage and temperature variations. A shorter timing window
is provided to perform the reduced calibration and transfer of values as defined by tim-
ing parameter tZQCS. A ZQCS command can effectively correct a minimum of 0.5% RON
and RTT impedance error within 64 clock cycles, assuming the maximum sensitivities
specified in DDR3L 34 Ohm Output Driver Sensitivity (page 73).

ACTIVATE
The ACTIVATE command is used to open (or activate) a row in a particular bank for a
subsequent access. The value on the BA[2:0] inputs selects the bank, and the address
provided on inputs A[n:0] selects the row. This row remains open (or active) for accesses
until a PRECHARGE command is issued to that bank.
A PRECHARGE command must be issued before opening a different row in the same
bank.

READ
The READ command is used to initiate a burst read access to an active row. The address
provided on inputs A[2:0] selects the starting column address, depending on the burst
length and burst type selected (see Burst Order table for additional information). The
value on input A10 determines whether auto precharge is used. If auto precharge is se-
lected, the row being accessed will be precharged at the end of the READ burst. If auto

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands

precharge is not selected, the row will remain open for subsequent accesses. The value
on input A12 (if enabled in the mode register) when the READ command is issued de-
termines whether BC4 (chop) or BL8 is used. After a READ command is issued, the
READ burst may not be interrupted.

Table 89: READ Command Summary

CKE
Prev. Next BA A[11,
Function Symbol Cycle Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 9:0]
READ BL8MRS, RD H L H L H BA RFU V L CA
BC4MRS
BC4OTF RDS4 H L H L H BA RFU L L CA
BL8OTF RDS8 H L H L H BA RFU H L CA
READ with BL8MRS, RDAP H L H L H BA RFU V H CA
auto BC4MRS
precharge BC4OTF RDAPS4 H L H L H BA RFU L H CA
BL8OTF RDAPS8 H L H L H BA RFU H H CA

WRITE
The WRITE command is used to initiate a burst write access to an active row. The value
on the BA[2:0] inputs selects the bank. The value on input A10 determines whether auto
precharge is used. The value on input A12 (if enabled in the MR) when the WRITE com-
mand is issued determines whether BC4 (chop) or BL8 is used.
Input data appearing on the DQ is written to the memory array subject to the DM input
logic level appearing coincident with the data. If a given DM signal is registered LOW,
the corresponding data will be written to memory. If the DM signal is registered HIGH,
the corresponding data inputs will be ignored and a WRITE will not be executed to that
byte/column location.

Table 90: WRITE Command Summary

CKE
Prev. Next BA A[11,
Function Symbol Cycle Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 9:0]
WRITE BL8MRS, WR H L H L L BA RFU V L CA
BC4MRS
BC4OTF WRS4 H L H L L BA RFU L L CA
BL8OTF WRS8 H L H L L BA RFU H L CA
WRITE with BL8MRS, WRAP H L H L L BA RFU V H CA
auto BC4MRS
precharge BC4OTF WRAPS4 H L H L L BA RFU L H CA
BL8OTF WRAPS8 H L H L L BA RFU H H CA

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands

PRECHARGE
The PRECHARGE command is used to de-activate the open row in a particular bank or
in all banks. The bank(s) are available for a subsequent row access a specified time ( tRP)
after the PRECHARGE command is issued, except in the case of concurrent auto pre-
charge. A READ or WRITE command to a different bank is allowed during a concurrent
auto precharge as long as it does not interrupt the data transfer in the current bank and
does not violate any other timing parameters. Input A10 determines whether one or all
banks are precharged. In the case where only one bank is precharged, inputs BA[2:0] se-
lect the bank; otherwise, BA[2:0] are treated as “Don’t Care.”
After a bank is precharged, it is in the idle state and must be activated prior to any READ
or WRITE commands being issued to that bank. A PRECHARGE command is treated as
a NOP if there is no open row in that bank (idle state) or if the previously open row is
already in the process of precharging. However, the precharge period is determined by
the last PRECHARGE command issued to the bank.

REFRESH
The REFRESH command is used during normal operation of the DRAM and is analo-
gous to CAS#-before-RAS# (CBR) refresh or auto refresh. This command is nonpersis-
tent, so it must be issued each time a refresh is required. The addressing is generated by
the internal refresh controller. This makes the address bits a “Don’t Care” during a RE-
FRESH command. The DRAM requires REFRESH cycles at an average interval of 7.8µs
(maximum when T C ≤ 85°C or 3.9µs maximum when T C ≤ 95°C). The REFRESH period
begins when the REFRESH command is registered and ends tRFC (MIN) later.
To allow for improved efficiency in scheduling and switching between tasks, some flexi-
bility in the absolute refresh interval is provided. A maximum of eight REFRESH com-
mands can be posted to any given DRAM, meaning that the maximum absolute interval
between any REFRESH command and the next REFRESH command is nine times the
maximum average interval refresh rate. Self refresh may be entered with up to eight RE-
FRESH commands being posted. After exiting self refresh (when entered with posted
REFRESH commands), additional posting of REFRESH commands is allowed to the ex-
tent that the maximum number of cumulative posted REFRESH commands (both pre-
and post-self refresh) does not exceed eight REFRESH commands.
At any given time, a maximum of 16 REFRESH commands can be issued within
2 x tREFI.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands

Figure 38: Refresh Mode

T0 T2 T3 T4 Ta0 Ta1 Tb0 Tb1 Tb2
T1
CK#

CK
tCK tCH tCL

CKE Valid 5 Valid 5 Valid 5

Command NOP1 PRE NOP1 NOP1 REF NOP5 REF2 NOP5 NOP5 ACT

Address RA

All banks
A10 RA
One bank

BA[2:0] Bank(s)3 BA

DQS, DQS#4

DQ4

DM4

tRP tRFC (MIN) tRFC2

Indicates break
Don’t Care
in time scale

Notes: 1. NOP commands are shown for ease of illustration; other valid commands may be possi-
ble at these times. CKE must be active during the PRECHARGE, ACTIVATE, and REFRESH
commands, but may be inactive at other times (see Power-Down Mode (page 190)).
2. The second REFRESH is not required, but two back-to-back REFRESH commands are
shown.
3. “Don’t Care” if A10 is HIGH at this point; however, A10 must be HIGH if more than one
bank is active (must precharge all active banks).
4. For operations shown, DM, DQ, and DQS signals are all “Don’t Care”/High-Z.
5. Only NOP and DES commands are allowed after a REFRESH command and until tRFC
(MIN) is satisfied.

SELF REFRESH
The SELF REFRESH command is used to retain data in the DRAM, even if the rest of the
system is powered down. When in self refresh mode, the DRAM retains data without ex-
ternal clocking. Self refresh mode is also a convenient method used to enable/disable
the DLL as well as to change the clock frequency within the allowed synchronous oper-
ating range (see Input Clock Frequency Change (page 131)). All power supply inputs
(including V REFCA and V REFDQ) must be maintained at valid levels upon entry/exit and
during self refresh mode operation. V REFDQ may float or not drive V DDQ/2 while in self
refresh mode under the following conditions:
• VSS < V REFDQ < V DD is maintained
• VREFDQ is valid and stable prior to CKE going back HIGH
• The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid
• All other self refresh mode exit timing requirements are met

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands

DLL Disable Mode

If the DLL is disabled by the mode register (MR1[0] can be switched during initialization
or later), the DRAM is targeted, but not guaranteed, to operate similarly to the normal
mode, with a few notable exceptions:
• The DRAM supports only one value of CAS latency (CL = 6) and one value of CAS
WRITE latency (CWL = 6).
• DLL disable mode affects the read data clock-to-data strobe relationship (tDQSCK),
but not the read data-to-data strobe relationship (tDQSQ, tQH). Special attention is
required to line up the read data with the controller time domain when the DLL is dis-
abled.
• In normal operation (DLL on), tDQSCK starts from the rising clock edge AL + CL
cycles after the READ command. In DLL disable mode, tDQSCK starts AL + CL - 1 cy-
cles after the READ command. Additionally, with the DLL disabled, the value of
tDQSCK could be larger than tCK.

The ODT feature (including dynamic ODT) is not supported during DLL disable mode.
The ODT resistors must be disabled by continuously registering the ODT ball LOW by
programming RTT,nom MR1[9, 6, 2] and RTT(WR) MR2[10, 9] to 0 while in the DLL disable
mode.
Specific steps must be followed to switch between the DLL enable and DLL disable
modes due to a gap in the allowed clock rates between the two modes (tCK [AVG] MAX
and tCK [DLL_DIS] MIN, respectively). The only time the clock is allowed to cross this
clock rate gap is during self refresh mode. Thus, the required procedure for switching
from the DLL enable mode to the DLL disable mode is to change frequency during self
refresh:
1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT
is turned off, and RTT,nom and RTT(WR) are High-Z), set MR1[0] to 1 to disable the
DLL.
2. Enter self refresh mode after tMOD has been satisfied.
3. After tCKSRE is satisfied, change the frequency to the desired clock rate.
4. Self refresh may be exited when the clock is stable with the new frequency for
tCKSRX. After tXS is satisfied, update the mode registers with appropriate values.

5. The DRAM will be ready for its next command in the DLL disable mode after the
greater of tMRD or tMOD has been satisfied. A ZQCL command should be issued
with appropriate timings met.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands

Figure 39: DLL Enable Mode to DLL Disable Mode

T0 T1 Ta0 Ta1 Tb0 Tc0 Td0 Td1 Te0 Te1 Tf0
CK#
CK

CKE Valid1

Command MRS2 NOP SRE3 NOP SRX4 NOP MRS5 NOP Valid1
6 tMOD tCKSRE 7 tCKSRX8 tXS tMOD

tCKESR

ODT9 Valid1

Indicates break
Don’t Care
in time scale

Notes: 1. Any valid command.

2. Disable DLL by setting MR1[0] to 1.
3. Enter SELF REFRESH.
4. Exit SELF REFRESH.
5. Update the mode registers with the DLL disable parameters setting.
6. Starting with the idle state, RTT is in the High-Z state.
7. Change frequency.
8. Clock must be stable tCKSRX.
9. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH.
A similar procedure is required for switching from the DLL disable mode back to the
DLL enable mode. This also requires changing the frequency during self refresh mode
(see Figure 40 (page 129)).
1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT
is turned off, and RTT,nom and RTT(WR) are High-Z), enter self refresh mode.
2. After tCKSRE is satisfied, change the frequency to the new clock rate.
3. Self refresh may be exited when the clock is stable with the new frequency for
tCKSRX. After tXS is satisfied, update the mode registers with the appropriate val-

ues. At a minimum, set MR1[0] to 0 to enable the DLL. Wait tMRD, then set MR0[8]
to 1 to enable DLL RESET.
4. After another tMRD delay is satisfied, update the remaining mode registers with
the appropriate values.
5. The DRAM will be ready for its next command in the DLL enable mode after the
greater of tMRD or tMOD has been satisfied. However, before applying any com-
mand or function requiring a locked DLL, a delay of tDLLK after DLL RESET must
be satisfied. A ZQCL command should be issued with the appropriate timings
met.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands

Figure 40: DLL Disable Mode to DLL Enable Mode

T0 Ta0 Ta1 Tb0 Tc0 Tc1 Td0 Te0 Tf0 Tg0 Th0
CK#
CK

CKE Valid
tDLLK

Command NOP SRE1 NOP SRX2 MRS3 MRS4 MRS5 Valid 6

7 tCKSRE 8 tCKSRX9 tXS tMRD tMRD

ODTLoff + 1 × tCK
tCKESR

ODT10

Indicates break
Don’t Care
in time scale

Notes: 1. Enter SELF REFRESH.

2. Exit SELF REFRESH.
3. Wait tXS, then set MR1[0] to 0 to enable DLL.
4. Wait tMRD, then set MR0[8] to 1 to begin DLL RESET.
5. Wait tMRD, update registers (CL, CWL, and write recovery may be necessary).
6. Wait tMOD, any valid command.
7. Starting with the idle state.
8. Change frequency.
9. Clock must be stable at least tCKSRX.
10. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH.
The clock frequency range for the DLL disable mode is specified by the parameter tCK
(DLL_DIS). Due to latency counter and timing restrictions, only CL = 6 and CWL = 6 are
supported.
DLL disable mode will affect the read data clock to data strobe relationship (tDQSCK)
but not the data strobe to data relationship (tDQSQ, tQH). Special attention is needed to
line up read data to the controller time domain.
Compared to the DLL on mode where tDQSCK starts from the rising clock edge AL + CL
cycles after the READ command, the DLL disable mode tDQSCK starts AL + CL - 1 cycles
after the READ command.
WRITE operations function similarly between the DLL enable and DLL disable modes;
however, ODT functionality is not allowed with DLL disable mode.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Commands

Figure 41: DLL Disable tDQSCK

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
CK#
CK

Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Address Valid

RL = AL + CL = 6 (CL = 6, AL = 0)
CL = 6

DQS, DQS# DLL on

DQ BL8 DLL on DI DI DI DI DI DI DI DI
b b+1 b+2 b+3 b+4 b+5 b+6 b+7
RL (DLL_DIS) = AL + (CL - 1) = 5
tDQSCK (DLL_DIS) MIN

DQS, DQS# DLL off

DQ BL8 DLL disable DI DI DI DI DI DI DI DI

b b+1 b+2 b+3 b+4 b+5 b+6 b+7

tDQSCK (DLL_DIS) MAX

DQS, DQS# DLL off

DQ BL8 DLL disable DI DI DI DI DI DI DI DI

b b+1 b+2 b+3 b+4 b+5 b+6 b+7

Transitioning Data Don’t Care

Table 91: READ Electrical Characteristics, DLL Disable Mode

Parameter Symbol Min Max Unit

Access window of DQS from CK, CK# tDQSCK (DLL_DIS) 1 10 ns

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 2Gb: x4, x8, x16 DDR3L SDRAM
Input Clock Frequency Change

Input Clock Frequency Change

When the DDR3 SDRAM is initialized, the clock must be stable during most normal
states of operation. This means that after the clock frequency has been set to the stable
state, the clock period is not allowed to deviate, except for what is allowed by the clock
jitter and spread spectrum clocking (SSC) specifications.
The input clock frequency can be changed from one stable clock rate to another under
two conditions: self refresh mode and precharge power-down mode. It is illegal to
change the clock frequency outside of those two modes. For the self refresh mode con-
dition, when the DDR3 SDRAM has been successfully placed into self refresh mode and
tCKSRE has been satisfied, the state of the clock becomes a “Don’t Care.” When the

clock becomes a “Don’t Care,” changing the clock frequency is permissible if the new
clock frequency is stable prior to tCKSRX. When entering and exiting self refresh mode
for the sole purpose of changing the clock frequency, the self refresh entry and exit
specifications must still be met.
The precharge power-down mode condition is when the DDR3 SDRAM is in precharge
power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a
logic LOW or RTT,nom and RTT(WR) must be disabled via MR1 and MR2. This ensures
RTT,nom and RTT(WR) are in an off state prior to entering precharge power-down mode,
and CKE must be at a logic LOW. A minimum of tCKSRE must occur after CKE goes LOW
before the clock frequency can change. The DDR3 SDRAM input clock frequency is al-
lowed to change only within the minimum and maximum operating frequency speci-
fied for the particular speed grade (tCK [AVG] MIN to tCK [AVG] MAX). During the input
clock frequency change, CKE must be held at a stable LOW level. When the input clock
frequency is changed, a stable clock must be provided to the DRAM tCKSRX before pre-
charge power-down may be exited. After precharge power-down is exited and tXP has
been satisfied, the DLL must be reset via the MRS. Depending on the new clock fre-
quency, additional MRS commands may need to be issued. During the DLL lock time,
RTT,nom and RTT(WR) must remain in an off state. After the DLL lock time, the DRAM is
ready to operate with a new clock frequency.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Input Clock Frequency Change

Figure 42: Change Frequency During Precharge Power-Down

Previous clock frequency New clock frequency

T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Td0 Td1 Te0 Te1

CK#
CK
tCH tCL tCH tCL tCH tCL tCH tCL
b b b b b b

tCK tCK tCK tCK

b b b

tCKSRE tCKSRX

tIH tIS tCKE

tIH
CKE
tIS
tCPDED

Command NOP NOP NOP NOP NOP MRS NOP Valid

Address DLL RESET Valid

tAOFPD/tAOF
tXP tIH tIS

ODT

DQS, DQS# High-Z

DQ High-Z

DM
tDLLK

Enter precharge Frequency Exit precharge

power-down mode change power-down mode

Indicates break
in time scale Don’t Care

Notes: 1. Applicable for both SLOW-EXIT and FAST-EXIT precharge power-down modes.
2. tAOFPD and tAOF must be satisfied and outputs High-Z prior to T1 (see On-Die Termina-
tion (ODT) (page 200)for exact requirements).
3. If the RTT,nom feature was enabled in the mode register prior to entering precharge
power-down mode, the ODT signal must be continuously registered LOW, ensuring RTT
is in an off state. If the RTT,nom feature was disabled in the mode register prior to enter-
ing precharge power-down mode, RTT will remain in the off state. The ODT signal can
be registered LOW or HIGH in this case.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling

Write Leveling
For better signal integrity, DDR3 SDRAM memory modules have adopted fly-by topolo-
gy for the commands, addresses, control signals, and clocks. Write leveling is a scheme
for the memory controller to adjust or de-skew the DQS strobe (DQS, DQS#) to CK rela-
tionship at the DRAM with a simple feedback feature provided by the DRAM. Write lev-
eling is generally used as part of the initialization process, if required. For normal
DRAM operation, this feature must be disabled. This is the only DRAM operation where
the DQS functions as an input (to capture the incoming clock) and the DQ function as
outputs (to report the state of the clock). Note that nonstandard ODT schemes are re-
quired.
The memory controller using the write leveling procedure must have adjustable delay
settings on its DQS strobe to align the rising edge of DQS to the clock at the DRAM pins.
This is accomplished when the DRAM asynchronously feeds back the CK status via the
DQ bus and samples with the rising edge of DQS. The controller repeatedly delays the
DQS strobe until a CK transition from 0 to 1 is detected. The DQS delay established by
this procedure helps ensure tDQSS, tDSS, and tDSH specifications in systems that use
fly-by topology by de-skewing the trace length mismatch. A conceptual timing of this
procedure is shown in Figure 43.

Figure 43: Write Leveling Concept

T0 T1 T2 T3 T4 T5 T6 T7
CK#

CK
Source

Differential DQS

Tn T0 T1 T2 T3 T4 T5 T6
CK#

CK
Destination

Differential DQS

DQ 0 0

Destination
Tn T0 T1 T2 T3 T4 T5 T6
CK#

CK

Push DQS to capture

0–1 transition
Differential DQS

DQ 1 1

Don’t Care

When write leveling is enabled, the rising edge of DQS samples CK, and the prime DQ
outputs the sampled CK’s status. The prime DQ for a x4 or x8 configuration is DQ0 with

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 2Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling

all other DQ (DQ[7:1]) driving LOW. The prime DQ for a x16 configuration is DQ0 for the
lower byte and DQ8 for the upper byte. It outputs the status of CK sampled by LDQS
and UDQS. All other DQ (DQ[7:1], DQ[15:9]) continue to drive LOW. Two prime DQ on a
x16 enable each byte lane to be leveled independently.
The write leveling mode register interacts with other mode registers to correctly config-
ure the write leveling functionality. Besides using MR1[7] to disable/enable write level-
ing, MR1[12] must be used to enable/disable the output buffers. The ODT value, burst
length, and so forth need to be selected as well. This interaction is shown in Table 92. It
should also be noted that when the outputs are enabled during write leveling mode, the
DQS buffers are set as inputs, and the DQ are set as outputs. Additionally, during write
leveling mode, only the DQS strobe terminations are activated and deactivated via the
ODT ball. The DQ remain disabled and are not affected by the ODT ball.

Table 92: Write Leveling Matrix

Note 1 applies to the entire table
DRAM
MR1[7] MR1[12] MR1[2, 6, 9] RTT,nom
Write Output RTT,nom DRAM
Leveling Buffers Value ODT Ball DQS DQ DRAM State Case Notes
Disabled See normal operations Write leveling not enabled 0
Enabled Disabled n/a Low Off Off DQS not receiving: not terminated 1 2
(1) (1) Prime DQ High-Z: not terminated
Other DQ High-Z: not terminated
20Ω, 30Ω, High On DQS not receiving: terminated by RTT 2
40Ω, 60Ω, or Prime DQ High-Z: not terminated
120Ω Other DQ High-Z: not terminated
Enabled n/a Low Off DQS receiving: not terminated 3 3
(0) Prime DQ driving CK state: not terminated
Other DQ driving LOW: not terminated
40Ω, 60Ω, or High On DQS receiving: terminated by RTT 4
120Ω Prime DQ driving CK state: not terminated
Other DQ driving LOW: not terminated

Notes: 1. Expected usage if used during write leveling: Case 1 may be used when DRAM are on a
dual-rank module and on the rank not being leveled or on any rank of a module not
being leveled on a multislot system. Case 2 may be used when DRAM are on any rank of
a module not being leveled on a multislot system. Case 3 is generally not used. Case 4 is
generally used when DRAM are on the rank that is being leveled.
2. Since the DRAM DQS is not being driven (MR1[12] = 1), DQS ignores the input strobe,
and all RTT,nom values are allowed. This simulates a normal standby state to DQS.
3. Since the DRAM DQS is being driven (MR1[12] = 0), DQS captures the input strobe, and
only some RTT,nom values are allowed. This simulates a normal write state to DQS.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling

Write Leveling Procedure

A memory controller initiates the DRAM write leveling mode by setting MR1[7] to 1, as-
suming the other programable features (MR0, MR1, MR2, and MR3) are first set and the
DLL is fully reset and locked. The DQ balls enter the write leveling mode going from a
High-Z state to an undefined driving state, so the DQ bus should not be driven. During
write leveling mode, only the NOP or DES commands are allowed. The memory con-
troller should attempt to level only one rank at a time; thus, the outputs of other ranks
should be disabled by setting MR1[12] to 1 in the other ranks. The memory controller
may assert ODT after a tMOD delay, as the DRAM will be ready to process the ODT tran-
sition. ODT should be turned on prior to DQS being driven LOW by at least ODTLon
delay (WL - 2 tCK), provided it does not violate the aforementioned tMOD delay require-
ment.
The memory controller may drive DQS LOW and DQS# HIGH after tWLDQSEN has
been satisfied. The controller may begin to toggle DQS after tWLMRD (one DQS toggle
is DQS transitioning from a LOW state to a HIGH state with DQS# transitioning from a
HIGH state to a LOW state, then both transition back to their original states). At a mini-
mum, ODTLon and tAON must be satisfied at least one clock prior to DQS toggling.
After tWLMRD and a DQS LOW preamble (tWPRE) have been satisfied, the memory
controller may provide either a single DQS toggle or multiple DQS toggles to sample CK
for a given DQS-to-CK skew. Each DQS toggle must not violate tDQSL (MIN) and tDQSH
(MIN) specifications. tDQSL (MAX) and tDQSH (MAX) specifications are not applicable
during write leveling mode. The DQS must be able to distinguish the CK’s rising edge
within tWLS and tWLH. The prime DQ will output the CK’s status asynchronously from
the associated DQS rising edge CK capture within tWLO. The remaining DQ that always
drive LOW when DQS is toggling must be LOW within tWLOE after the first tWLO is sat-
isfied (the prime DQ going LOW). As previously noted, DQS is an input and not an out-
put during this process. Figure 44 (page 136) depicts the basic timing parameters for
the overall write leveling procedure.
The memory controller will most likely sample each applicable prime DQ state and de-
termine whether to increment or decrement its DQS delay setting. After the memory
controller performs enough DQS toggles to detect the CK’s 0-to-1 transition, the memo-
ry controller should lock the DQS delay setting for that DRAM. After locking the DQS
setting is locked, leveling for the rank will have been achieved, and the write leveling
mode for the rank should be disabled or reprogrammed (if write leveling of another
rank follows).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling

Figure 44: Write Leveling Sequence

T1 T2
tWLH tWLS
CK#
CK

Command MRS1 NOP2 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tMOD

ODT

tWLDQSEN tDQSL3 tDQSH3 tDQSL3 tDQSH3

Differential DQS4

tWLMRD tWLO tWLO

Prime DQ5
tWLO
tWLOE

Early remaining DQ

tWLO

Late remaining DQ

Indicates break
Undefined Driving Mode Don’t Care
in time scale

Notes: 1. MRS: Load MR1 to enter write leveling mode.

2. NOP: NOP or DES.
3. DQS, DQS# needs to fulfill minimum pulse width requirements tDQSH (MIN) and tDQSL
(MIN) as defined for regular writes. The maximum pulse width is system-dependent.
4. Differential DQS is the differential data strobe (DQS, DQS#). Timing reference points are
the zero crossings. The solid line represents DQS; the dotted line represents DQS#.
5. DRAM drives leveling feedback on a prime DQ (DQ0 for x4 and x8). The remaining DQ
are driven LOW and remain in this state throughout the leveling procedure.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling

Write Leveling Mode Exit Procedure

After the DRAM are leveled, they must exit from write leveling mode before the normal
mode can be used. Figure 45 depicts a general procedure for exiting write leveling
mode. After the last rising DQS (capturing a 1 at T0), the memory controller should stop
driving the DQS signals after tWLO (MAX) delay plus enough delay to enable the memo-
ry controller to capture the applicable prime DQ state (at ~Tb0). The DQ balls become
undefined when DQS no longer remains LOW, and they remain undefined until tMOD
after the MRS command (at Te1).
The ODT input should be de-asserted LOW such that ODTLoff (MIN) expires after the
DQS is no longer driving LOW. When ODT LOW satisfies tIS, ODT must be kept LOW (at
~Tb0) until the DRAM is ready for either another rank to be leveled or until the normal
mode can be used. After DQS termination is switched off, write level mode should be
disabled via the MRS command (at Tc2). After tMOD is satisfied (at Te1), any valid com-
mand may be registered by the DRAM. Some MRS commands may be issued after tMRD
(at Td1).

Figure 45: Write Leveling Exit Procedure

T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Tc2 Td0 Td1 Te0 Te1
CK#
CK

Command NOP NOP NOP NOP NOP NOP NOP MRS NOP Valid NOP Valid
tMRD

Address MR1 Valid Valid

tIS tMOD

ODT
t
ODTLoff AOF (MIN)

RTT DQS, RTT DQS# RTT,nom

t
AOF (MAX)
DQS, DQS#

RTT(DQ)
tWLO + tWLOE
DQ CK = 1

Indicates break
Undefined Driving Mode Transitioning Don’t Care
in time scale

Note: 1. The DQ result, = 1, between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing
CK HIGH just after the T0 state.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Initialization

Initialization
The following sequence is required for power-up and initialization, as shown in Figure
46 (page 139):
1. Apply power. RESET# is recommended to be below 0.2 × V DDQ during power ramp
to ensure the outputs remain disabled (High-Z) and ODT off (RTT is also High-Z).
All other inputs, including ODT, may be undefined.
During power-up, either of the following conditions may exist and must be met:
• Condition A:
– VDD and V DDQ are driven from a single-power converter output and are
ramped with a maximum delta voltage between them of ΔV ≤ 300mV. Slope re-
versal of any power supply signal is allowed. The voltage levels on all balls oth-
er than V DD, V DDQ, V SS, V SSQ must be less than or equal to V DDQ and V DD on
one side, and must be greater than or equal to V SSQ and V SS on the other side.
– Both V DD and V DDQ power supplies ramp to V DD,min and V DDQ,min within
tV
DDPR = 200ms.
– VREFDQ tracks V DD × 0.5, V REFCA tracks V DD × 0.5.
– VTT is limited to 0.95V when the power ramp is complete and is not applied
directly to the device; however, tVTD should be greater than or equal to 0 to
avoid device latchup.
• Condition B:
– VDD may be applied before or at the same time as V DDQ.
– VDDQ may be applied before or at the same time as V TT, V REFDQ, and V REFCA.
– No slope reversals are allowed in the power supply ramp for this condition.
2. Until stable power, maintain RESET# LOW to ensure the outputs remain disabled
(High-Z). After the power is stable, RESET# must be LOW for at least 200µs to be-
gin the initialization process. ODT will remain in the High-Z state while RESET# is
LOW and until CKE is registered HIGH.
3. CKE must be LOW 10ns prior to RESET# transitioning HIGH.
4. After RESET# transitions HIGH, wait 500µs (minus one clock) with CKE LOW.
5. After the CKE LOW time, CKE may be brought HIGH (synchronously) and only
NOP or DES commands may be issued. The clock must be present and valid for at
least 10ns (and a minimum of five clocks) and ODT must be driven LOW at least
tIS prior to CKE being registered HIGH. When CKE is registered HIGH, it must be

continuously registered HIGH until the full initialization process is complete.

6. After CKE is registered HIGH and after tXPR has been satisfied, MRS commands
may be issued. Issue an MRS (LOAD MODE) command to MR2 with the applica-
ble settings (provide LOW to BA2 and BA0 and HIGH to BA1).
7. Issue an MRS command to MR3 with the applicable settings.
8. Issue an MRS command to MR1 with the applicable settings, including enabling
the DLL and configuring ODT.
9. Issue an MRS command to MR0 with the applicable settings, including a DLL RE-
SET command. tDLLK (512) cycles of clock input are required to lock the DLL.
10. Issue a ZQCL command to calibrate RTT and RON values for the process voltage
temperature (PVT). Prior to normal operation, tZQinit must be satisfied.
11. When tDLLK and tZQinit have been satisfied, the DDR3 SDRAM will be ready for
normal operation.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Initialization

Figure 46: Initialization Sequence

T (MAX) = 200ms

VDD See power-up

conditions
VDDQ in the
initialization
sequence text,
VTT set up 1

VREF

Stable and T0 T1 Ta0 Tb0 Tc0 Td0

Power-up tVTD valid clock tCK
ramp CK#
CK
tCKSRX tCL tCL

tIOZ = 20ns

RESET#

tIS
T (MIN) = 10ns

CKE Valid

ODT Valid

tIS

Command NOP MRS MRS MRS MRS ZQCL Valid

DM

Address Code Code Code Code Valid

A10 Code Code Code Code A10 = H Valid

BA0 = L BA0 = H BA0 = H BA0 = L

BA[2:0] BA1 = H BA1 = H BA1 = L BA1 = L Valid
BA2 = L BA2 = L BA2 = L BA2 = L

DQS

DQ

RTT

T = 200µs (MIN) T = 500µs (MIN) tXPR tMRD tMRD tMRD tMOD tZQinit

MR2 MR3 MR1 with MR0 with ZQ calibration

All voltage DLL enable DLL reset
supplies valid tDLLK
and stable DRAM ready for
external commands Normal
operation

Indicates break
Don’t Care
in time scale

CCMTD-1725822587-7895
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 2Gb: x4, x8, x16 DDR3L SDRAM
Voltage Initialization/Change

Voltage Initialization/Change
If the SDRAM is powered up and initialized for the 1.35V operating voltage range, volt-
age can be increased to the 1.5V operating range provided the following conditions are
met (See Figure 47 (page 141)):
• Just prior to increasing the 1.35V operating voltages, no further commands are issued,
other than NOPs or COMMAND INHIBITs, and all banks are in the precharge state.
• The 1.5V operating voltages are stable prior to issuing new commands, other than
NOPs or COMMAND INHIBITs.
• The DLL is reset and relocked after the 1.5V operating voltages are stable and prior to
any READ command.
• The ZQ calibration is performed. tZQinit must be satisfied after the 1.5V operating
voltages are stable and prior to any READ command.
If the SDRAM is powered up and initialized for the 1.5V operating voltage range, voltage
can be reduced to the 1.35V operation range provided the following conditions are met
(See Figure 47 (page 141)) :
• Just prior to reducing the 1.5V operating voltages, no further commands are issued,
other than NOPs or COMMAND INHIBITs, and all banks are in the precharge state.
• The 1.35V operating voltages are stable prior to issuing new commands, other than
NOPs or COMMAND INHIBITs.
• The DLL is reset and relocked after the 1.35V operating voltages are stable and prior to
any READ command.
• The ZQ calibration is performed. tZQinit must be satisfied after the 1.35V operating
voltages are stable and prior to any READ command.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Voltage Initialization/Change

VDD Voltage Switching

After the DDR3L DRAM is powered up and initialized, the power supply can be altered
between the DDR3L and DDR3 levels, provided the sequence in Figure 47 is main-
tained.

Figure 47: VDD Voltage Switching

Ta Tb Tc Td Te Tf Tg Th Ti Tj Tk

(( (( (( (( (( (( (( (( (( ((
)) )) )) )) )) )) )) )) )) ))
CK, CK# (( (( (( (( (( ((
(( (( (( ((
)) )) )) )) )) )) )) )) )) ))

tCKSRX
TMIN = 10ns
VDD, VDDQ (DDR3) (( ((
(( (( (( (( (( (( ((
)) )) )) )) )) )) )) )) ))
VDD, VDDQ (DDR3L) (( (( (( (( (( (( (( (( ((
)) )) )) )) )) )) )) )) ))

TMIN = 10ns

TMIN = 200µs

T = 500µs

(( (( (( (( (( (( (( ((
)) )) )) )) )) )) )) ))
RESET# ((
))
tIS
(( TMIN = 10ns (( (( (( (( (( (( ((
)) )) )) )) )) )) )) ))
CKE Valid
(( (( (( (( (( (( (( (( ((
)) )) )) )) )) )) )) )) ))

tDLLK

tXPR tMRD tMRD tMRD tMOD tZQinit

tIS
(( ((
(( (( (( (( (( ((
((
)) )) )) )) )) )) )) )) ))
Command Note 1 MRS MRS MRS MRS ZQCL Note 1 Valid
(( (( (( (( (( (( (( (( ((
)) )) )) )) )) )) ))
)) ))

(( (( (( (( (( (( (( (( ((
)) )) )) )) )) )) )) )) ))
BA (( MR2 (( MR3 (( MR1 (( MR0 (( (( ((
Valid
(( ((
)) )) )) )) )) )) )) )) ))

tIS tIS
(( (( (( (( (( (( (( (( ((
)) )) )) )) )) )) )) )) ))
ODT Static LOW in case RTT,nom is enabled at time Tg, otherwise static HIGH or LOW Valid
(( (( (( (( (( (( (( (( ((
)) )) )) )) )) )) )) )) ))

RTT (( (( (( (( (( (( (( (( ((
)) )) )) )) )) )) )) )) ))

((
))
Time break Don’t Care
((
))

Note: 1. From time point Td until Tk, NOP or DES commands must be applied between MRS and
ZQCL commands.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Registers

Mode Registers
Mode registers (MR0–MR3) are used to define various modes of programmable opera-
tions of the DDR3 SDRAM. A mode register is programmed via the mode register set
(MRS) command during initialization, and it retains the stored information (except for
MR0[8], which is self-clearing) until it is reprogrammed, RESET# goes LOW, the device
loses power.
Contents of a mode register can be altered by re-executing the MRS command. Even if
the user wants to modify only a subset of the mode register’s variables, all variables
must be programmed when the MRS command is issued. Reprogramming the mode
register will not alter the contents of the memory array, provided it is performed cor-
rectly.
The MRS command can only be issued (or re-issued) when all banks are idle and in the
precharged state (tRP is satisfied and no data bursts are in progress). After an MRS com-
mand has been issued, two parameters must be satisfied: tMRD and tMOD. The control-
ler must wait tMRD before initiating any subsequent MRS commands.

Figure 48: MRS to MRS Command Timing (tMRD)

T0 T1 T2 Ta0 Ta1 Ta2
CK#
CK

Command MRS1 NOP NOP NOP NOP MRS2

tMRD

Address Valid Valid

CKE3

Indicates break
Don’t Care
in time scale

Notes: 1. Prior to issuing the MRS command, all banks must be idle and precharged, tRP (MIN)
must be satisfied, and no data bursts can be in progress.
2. tMRD specifies the MRS to MRS command minimum cycle time.
3. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN) (see Pow-
er-Down Mode (page 190)).
4. For a CAS latency change, tXPDLL timing must be met before any non-MRS command.
The controller must also wait tMOD before initiating any non-MRS commands (exclud-
ing NOP and DES). The DRAM requires tMOD in order to update the requested features,
with the exception of DLL RESET, which requires additional time. Until tMOD has been
satisfied, the updated features are to be assumed unavailable.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)

Figure 49: MRS to nonMRS Command Timing (tMOD)

T0 T1 T2 Ta0 Ta1 Ta2
CK#
CK

non
Command MRS NOP NOP NOP NOP MRS

tMOD

Address Valid Valid

CKE Valid

Old New
setting Updating setting setting

Indicates break
Don’t Care
in time scale

Notes: 1. Prior to issuing the MRS command, all banks must be idle (they must be precharged, tRP
must be satisfied, and no data bursts can be in progress).
2. Prior to Ta2 when tMOD (MIN) is being satisfied, no commands (except NOP/DES) may be
issued.
3. If RTT was previously enabled, ODT must be registered LOW at T0 so that ODTL is satis-
fied prior to Ta1. ODT must also be registered LOW at each rising CK edge from T0 until
tMODmin is satisfied at Ta2.

4. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN), at which
time power-down may occur (see Power-Down Mode (page 190)).

Mode Register 0 (MR0)

The base register, mode register 0 (MR0), is used to define various DDR3 SDRAM modes
of operation. These definitions include the selection of a burst length, burst type, CAS
latency, operating mode, DLL RESET, write recovery, and precharge power-down mode
(see Figure 50 (page 144)).

Burst Length
Burst length is defined by MR0[1:0]. Read and write accesses to the DDR3 SDRAM are
burst-oriented, with the burst length being programmable to 4 (chop mode), 8 (fixed
mode), or selectable using A12 during a READ/WRITE command (on-the-fly). The burst
length determines the maximum number of column locations that can be accessed for
a given READ or WRITE command. When MR0[1:0] is set to 01 during a READ/WRITE
command, if A12 = 0, then BC4 (chop) mode is selected. If A12 = 1, then BL8 mode is
selected. Specific timing diagrams, and turnaround between READ/WRITE, are shown
in the READ/WRITE sections of this document.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst will wrap within the block if a boundary is reached. The block is
uniquely selected by A[i:2] when the burst length is set to 4 and by A[i:3] when the burst
length is set to 8 (where Ai is the most significant column address bit for a given config-
uration). The remaining (least significant) address bit(s) is (are) used to select the start-

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)

ing location within the block. The programmed burst length applies to both READ and
WRITE bursts.

Figure 50: Mode Register 0 (MR0) Definitions

BA2 BA1 BA0 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus

17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Mode register 0 (MR0)

01 0 0 01 01 PD WR DLL 01 CAS# latency BT CL BL

M16 M15 Mode Register M1 M0 Burst Length

0 0 Mode register 0 (MR0) 0 0 Fixed BL8
0 1 Mode register 1 (MR1) M12 Precharge PD M8 DLL Reset 0 1 4 or 8 (on-the-fly via A12)
1 0 Mode register 2 (MR2) 0 DLL off (slow exit) 0 No 1 0 Fixed BC4 (chop)
1 1 Mode register 3 (MR3) 1 DLL on (fast exit) 1 Yes 1 1 Reserved

M11 M10 M9 Write Recovery M6 M5 M4 M2 CAS Latency M3 READ Burst Type

0 0 0 16 0 0 0 0 Reserved 0 Sequential (nibble)
0 0 1 5 0 0 1 0 5 1 Interleaved
0 1 0 6 0 1 0 0 6
0 1 1 7 0 1 1 0 7
1 0 0 8 1 0 0 0 8
1 0 1 10 1 0 1 0 9
1 1 0 12 1 1 0 0 10
1 1 1 14 1 1 1 0 11
0 0 0 1 12
0 0 1 1 13
0 1 0 1 14

Note: 1. MR0[18, 15:13, 7] are reserved for future use and must be programmed to 0.

Burst Type
Accesses within a given burst may be programmed to either a sequential or an inter-
leaved order. The burst type is selected via MR0[3] (see Figure 50 (page 144)). The order-
ing of accesses within a burst is determined by the burst length, the burst type, and the
starting column address. DDR3 only supports 4-bit burst chop and 8-bit burst access
modes. Full interleave address ordering is supported for READs, while WRITEs are re-
stricted to nibble (BC4) or word (BL8) boundaries.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)

Table 93: Burst Order

Starting
Burst READ/ Column Address Burst Type = Sequential Burst Type = Interleaved
Length WRITE (A[2, 1, 0]) (Decimal) (Decimal) Notes
4 READ 000 0, 1, 2, 3, Z, Z, Z, Z 0, 1, 2, 3, Z, Z, Z, Z 1, 2
001 1, 2, 3, 0, Z, Z, Z, Z 1, 0, 3, 2, Z, Z, Z, Z 1, 2
010 2, 3, 0, 1, Z, Z, Z, Z 2, 3, 0, 1, Z, Z, Z, Z 1, 2
011 3, 0, 1, 2, Z, Z, Z, Z 3, 2, 1, 0, Z, Z, Z, Z 1, 2
100 4, 5, 6, 7, Z, Z, Z, Z 4, 5, 6, 7, Z, Z, Z, Z 1, 2
101 5, 6, 7, 4, Z, Z, Z, Z 5, 4, 7, 6, Z, Z, Z, Z 1, 2
110 6, 7, 4, 5, Z, Z, Z, Z 6, 7, 4, 5, Z, Z, Z, Z 1, 2
111 7, 4, 5, 6, Z, Z, Z, Z 7, 6, 5, 4, Z, Z, Z, Z 1, 2
WRITE 0VV 0, 1, 2, 3, X, X, X, X 0, 1, 2, 3, X, X, X, X 1, 3, 4
1VV 4, 5, 6, 7, X, X, X, X 4, 5, 6, 7, X, X, X, X 1, 3, 4
8 READ 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1
001 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6 1
010 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5 1
011 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4 1
100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 1
101 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2 1
110 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1 1
111 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0 1
WRITE VVV 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1, 3

Notes: 1. Internal READ and WRITE operations start at the same point in time for BC4 as they do
for BL8.
2. Z = Data and strobe output drivers are in tri-state.
3. V = A valid logic level (0 or 1), but the respective input buffer ignores level-on input
pins.
4. X = “Don’t Care.”

DLL RESET
DLL RESET is defined by MR0[8] (see Figure 50 (page 144)). Programming MR0[8] to 1
activates the DLL RESET function. MR0[8] is self-clearing, meaning it returns to a value
of 0 after the DLL RESET function has been initiated.
Anytime the DLL RESET function is initiated, CKE must be HIGH and the clock held
stable for 512 (tDLLK) clock cycles before a READ command can be issued. This is to
allow time for the internal clock to be synchronized with the external clock. Failing to
wait for synchronization to occur may result in invalid output timing specifications,
such as tDQSCK timings.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)

Write Recovery
WRITE recovery time is defined by MR0[11:9] (see Figure 50 (page 144)). Write recovery
values of 5, 6, 7, 8, 10, 12, or 14 may be used by programming MR0[11:9]. The user is
required to program the correct value of write recovery, which is calculated by dividing
tWR (ns) by tCK (ns) and rounding up a noninteger value to the next integer:

WR (cycles) = roundup (tWR [ns]/tCK [ns]).

Precharge Power-Down (Precharge PD)

The precharge power-down (PD) bit applies only when precharge power-down mode is
being used. When MR0[12] is set to 0, the DLL is off during precharge power-down, pro-
viding a lower standby current mode; however, tXPDLL must be satisfied when exiting.
When MR0[12] is set to 1, the DLL continues to run during precharge power-down
mode to enable a faster exit of precharge power-down mode; however, tXP must be sat-
isfied when exiting (see Power-Down Mode (page 190)).

CAS Latency (CL)

The CL is defined by MR0[6:4], as shown in Figure 50 (page 144). CAS latency is the de-
lay, in clock cycles, between the internal READ command and the availability of the first
bit of output data. The CL can be set to 5, 6, 7, 8, 9, 10, 11, 12, 13 or 14. DDR3 SDRAM do
not support half-clock latencies.
Examples of CL = 6 and CL = 8 are shown below. If an internal READ command is regis-
tered at clock edge n, and the CAS latency is m clocks, the data will be available nomi-
nally coincident with clock edge n + m. See Speed Bin Tables for CLs supported at vari-
ous operating frequencies.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)

Figure 51: READ Latency

T0 T1 T2 T3 T4 T5 T6 T7 T8

CK#

CK

Command READ NOP NOP NOP NOP NOP NOP NOP NOP

AL = 0, CL = 6

DQS, DQS#

DI DI DI DI DI
DQ n n+1 n+2 n+3 n+4

T0 T1 T2 T3 T4 T5 T6 T7 T8

CK#
CK

Command READ NOP NOP NOP NOP NOP NOP NOP NOP

AL = 0, CL = 8

DQS, DQS#

DI
DQ n

Transitioning Data Don’t Care

Notes: 1. For illustration purposes, only CL = 6 and CL = 8 are shown. Other CL values are possible.
2. Shown with nominal tDQSCK and nominal tDSDQ.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 1 (MR1)

Mode Register 1 (MR1)

The mode register 1 (MR1) controls additional features and functions not available in
the other mode registers: DLL ENABLE/DISABLE, output drive strength, OUTPUT ENA-
BLE/DISABLE (Q OFF), TDQS ENABLE/DISABLE (x8 configuration only), on-die termi-
nation (ODT) resistance value RTT,nom, WRITE LEVELING, and posted CAS additive la-
tency (AL). These features and functions are controlled via the bits shown in the figure
below. The MR1 register is programmed via the MRS command and retains the stored
information until it is reprogrammed, RESET# goes LOW, or the device loses power. Re-
programming the MR1 register will not alter the contents of the memory array, provided
it is reprogrammed correctly.
The MR1 register must be loaded when all banks are idle and no bursts are in progress.
The controller must satisfy the specified timing parameters tMRD and tMOD before ini-
tiating a subsequent operation.

Figure 52: Mode Register 1 (MR1) Definition

BA2 BA1 BA0 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

Address bus

17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Mode register 1 (MR1)

01 0 1 01 01 Q Off TDQS 01 RTT 01 WL RTT ODS AL RTT ODS DLL
M0 DLL Enable
M16 M15 Mode Register 0 Enable (normal)
0 0 Mode register set 0 (MR0) M12 Q Off M11 TDQS
1 Disable
0 1 Mode register set 1 (MR1) 0 Enabled 0 Disabled

1 0 Mode register set 2 (MR2) 1 Disabled 1 Enabled M5 M1 Output Drive Strength

1 1 Mode register set 3 (MR3) 0 0 RZQ/6 (40Ω NOM)
R TT,nom (ODT) 2 R TT,nom (ODT) 3 M7 Write Leveling
0 1 RZQ/7 (34Ω NOM)
M9 M6 M2 Non-Writes Writes 0 Disable (normal)
1 0 Reserved
0 0 0 RTT,nom disabled RTT,nom disabled 1 Enable
1 1 Reserved
0 0 1 RZQ/4 (60Ω NOM) RZQ/4 (60Ω NOM)
0 1 0 RZQ/2 (120Ω NOM) RZQ/2 (120Ω NOM)
0 1 1 RZQ/6 (40Ω NOM) RZQ/6 (40Ω NOM) M4 M3 Additive Latency (AL)
1 0 0 RZQ/12 (20Ω NOM) n/a 0 0 Disabled (AL = 0)
1 0 1 RZQ/8 (30Ω NOM) n/a 0 1 AL = CL - 1
1 1 0 Reserved Reserved 1 0 AL = CL - 2
1 1 1 Reserved Reserved 1 1 Reserved

Notes: 1. MR1[17, 14, 13, 10, 8] are reserved for future use and must be programmed to 0.
2. During write leveling, if MR1[7] and MR1[12] are 1, then all RTT,nom values are available
for use.
3. During write leveling, if MR1[7] is 1, but MR1[12] is 0, then only RTT,nom write values are
available for use.

DLL ENABLE/DISABLE
The DLL may be enabled or disabled by programming MR1[0] during the LOAD MODE
command (see Figure 52 (page 148)). The DLL must be enabled for normal operation.
DLL enable is required during power-up initialization and upon returning to normal
operation, after having disabled the DLL for the purpose of debugging or evaluation.
Enabling the DLL should always be followed by resetting the DLL using the appropriate
LOAD MODE command.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 1 (MR1)

If the DLL is enabled prior to entering self refresh mode, the DLL is automatically disa-
bled when entering the SELF REFRESH operation and is automatically re-enabled and
reset upon exit of the SELF REFRESH operation. If the DLL is disabled prior to entering
self refresh mode, the DLL remains disabled, even upon exit of the SELF REFRESH oper-
ation until it is re-enabled and reset.
The DRAM is not tested to check—nor does Micron warrant compliance with—normal
mode timings or functionality when the DLL is disabled. An attempt has been made to
have the DRAM operate in the normal mode where reasonably possible when the DLL
has been disabled; however, by industry standard, a few known exceptions are defined:
• ODT is not allowed to be used.
• The output data is no longer edge-aligned to the clock.
• CL and CWL can only be six clocks.
When the DLL is disabled, timing and functionality can vary from the normal operation
specifications when the DLL is enabled (see DLL Disable Mode in Commands section of
the data sheet for more information). Disabling the DLL also implies the need to change
the clock frequency (see Input Clock Frequency Change section of the data sheet for de-
tails).

Output Drive Strength

The DDR3 SDRAM uses a programmable impedance output buffer. The drive strength
mode register setting is defined by MR1[5, 1]. RZQ/7 (34Ω [NOM]) is the primary output
driver impedance setting for DDR3 SDRAM devices. To calibrate the output driver im-
pedance, an external precision resistor (RZQ) is connected between the ZQ ball and
VSSQ. The value of the resistor must be 240Ω ±1%.
The output impedance is set during initialization. Additional impedance calibration up-
dates do not affect device operation, and all data sheet timings and current specifica-
tions are met during an update.
To meet the 34Ω specification, the output drive strength must be set to 34Ω during initi-
alization. To obtain a calibrated output driver impedance after power-up, the DDR3
SDRAM needs a calibration command that is part of the initialization and reset proce-
dure.

OUTPUT ENABLE/DISABLE
The OUTPUT ENABLE/DISABLE function is defined by MR1[12] (see Figure 52 (page
148)). When enabled (MR1[12] = 0), all outputs (DQ, DQS, DQS#) function when in the
normal mode of operation. When disabled (MR1[12] = 1), all DDR3 SDRAM outputs
(DQ and DQS, DQS#) are High-Z. The output disable feature is intended to be used dur-
ing IDD characterization of the READ current and during tDQSS margining (write level-
ing) only.

TDQS ENABLE
Termination data strobe (TDQS) is a function of the x8 DDR3 SDRAM configuration
that provides termination resistance RTT, and can be useful in some system configura-
tions. TDQS is not supported in x4 or x16 configurations. When enabled via the mode
register (MR1[11]), RTT applied to DQS and DQS# is also applied to TDQS and TDQS#.
In contrast to the RDQS function of DDR2 SDRAM, DDR3’s TDQS provides the termina-
tion resistance RTT only. The OUTPUT DATA STROBE function of RDQS is not provided

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 1 (MR1)

by TDQS; thus, R ON does not apply to TDQS and TDQS#. The TDQS and DM functions
share the same ball. When the TDQS function is enabled via the mode register, the DM
function is not supported. When the TDQS function is disabled, the DM function is pro-
vided, and the TDQS# ball is not used. The TDQS function is available in the x8 DDR3
SDRAM configuration only and must be disabled via the mode register for the x4 and
x16 configurations.

On-Die Termination (ODT)

On-die termination (ODT) resistance RTT,nom is defined by MR1[9, 6, 2] (see Figure 52
(page 148)). The R TT termination resistance value applies to the DQ, DM, DQS, DQS#,
and TDQS, TDQS# balls. DDR3 supports multiple R TT termination resistance values
based on RZQ/n where n can be 2, 4, 6, 8, or 12 and RZQ is 240Ω.
Unlike DDR2, DDR3 ODT must be turned off prior to reading data out and must remain
off during a READ burst. RTT,nom termination is allowed any time after the DRAM is ini-
tialized, calibrated, and not performing read accesses, or when it is not in self refresh
mode. Additionally, write accesses with dynamic ODT (RTT(WR)) enabled temporarily re-
places RTT,nom with RTT(WR).
The ODT feature is designed to improve signal integrity of the memory channel by ena-
bling the DDR3 SDRAM controller to independently turn on/off ODT for any or all devi-
ces. The ODT input control pin is used to determine when R TT is turned on
(ODTLon) and off (ODTLoff), assuming ODT has been enabled via MR1[9, 6, 2].
Timings for ODT are detailed in On-Die Termination(ODT) section of the data sheet.

WRITE LEVELING
The WRITE LEVELING function is enabled by MR1[7] (see Figure 52 (page 148)). Write
leveling is used (during initialization) to de-skew the DQS strobe to clock offset as a re-
sult of fly-by topology designs. For better signal integrity, DDR3 SDRAM memory mod-
ules adopted fly-by topology for the commands, addresses, control signals, and clocks.
The fly-by topology benefits from a reduced number of stubs and their lengths. Howev-
er, fly-by topology induces flight time skews between the clock and DQS strobe (and
DQ) at each DRAM on the DIMM. Controllers will have a difficult time maintaining
tDQSS, tDSS, and tDSH specifications without supporting write leveling in systems that

use fly-by topology-based modules. Write leveling timing and detailed operation infor-
mation is provided in Write Leveling (page 133).

Posted CAS Additive Latency (AL)

Posted CAS additive latency (AL) is supported to make the command and data bus effi-
cient for sustainable bandwidths in DDR3 SDRAM. MR1[4, 3] define the value of AL (see
Figure 53 (page 151)). MR1[4, 3] enable the user to program the DDR3 SDRAM with AL
= 0, CL - 1, or CL - 2.
With this feature, the DDR3 SDRAM enables a READ or WRITE command to be issued
after the ACTIVATE command for that bank prior to tRCD (MIN). The only restriction is
ACTIVATE to READ or WRITE + AL ≥ tRCD (MIN) must be satisfied. Assuming tRCD
(MIN) = CL, a typical application using this feature sets AL = CL - 1tCK = tRCD (MIN) - 1
tCK. The READ or WRITE command is held for the time of the AL before it is released

internally to the DDR3 SDRAM device. READ latency (RL) is controlled by the sum of
the AL and CAS latency (CL), RL = AL + CL. WRITE latency (WL) is the sum of CAS

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 1 (MR1)

WRITE latency and AL, WL = AL + CWL (see Mode Register 2 (MR2) (page 152)). Exam-
ples of READ and WRITE latencies are shown in Figure 53 (page 151) and Figure 54
(page 152).

Figure 53: READ Latency (AL = 5, CL = 6)

BC4
T0 T1 T2 T6 T11 T12 T13 T14
CK#

CK

Command ACTIVE n READ n NOP NOP NOP NOP NOP NOP

tRCD (MIN)

DQS, DQS#

AL = 5 CL = 6

DQ DO DO DO DO
n n+1 n+2 n+3
RL = AL + CL = 11

Indicates break
Transitioning Data Don’t Care
in time scale

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 2 (MR2)

Mode Register 2 (MR2)

The mode register 2 (MR2) controls additional features and functions not available in
the other mode registers. These addional functions are CAS WRITE latency (CWL), AU-
TO SELF REFRESH (ASR), SELF REFRESH TEMPERATURE (SRT), and DYNAMIC ODT
(RTT(WR)). These functions are controlled via the bits shown in the figure below. MR2 is
programmed via the MRS command and will retain the stored information until it is
programmed again or the device loses power. Reprogramming the MR2 register will not
alter the contents of the memory array, provided it is reprogrammed correctly. The MR2
register must be loaded when all banks are idle and no data bursts are in progress, and
the controller must wait the specified time tMRD and tMOD before initiating a subse-
quent operation.

Figure 54: Mode Register 2 (MR2) Definition

BA2 BA1 BA0 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus

17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Mode register 2 (MR2)

01 1 0 01 01 01 01 RTT(WR) 01 SRT ASR CWL 0 1 0 1 01

M16 M15 Mode Register M7 Self Refresh Temperature M5 M4 M3 CAS Write Latency (CWL)
0 0 Mode register set 0 (MR0) 0 Normal (0°C to 85°C) 0 0 0 5 CK (tCK ≥ 2.5ns)
0 1 Mode register set 1 (MR1) 1 Extended (0°C to 95°C) 0 0 1 6 CK (2.5ns > tCK ≥ 1.875ns)
1 0 Mode register set 2 (MR2) 0 1 0 7 CK (1.875ns > tCK ≥ 1.5ns)
1 1 Mode register set 3 (MR3) 0 1 1 8 CK (1.5ns > tCK ≥ 1.25ns)
1 0 0 9 CK (1.25ns > tCK ≥ 1.07ns)
1 0 1 10 CK (1.071ns > tCK ≥ 0.938ns)
Dynamic ODT
M6 Auto Self Refresh 1 1 0 Reserved
M10 M9 (R TT(WR) )
0 Disabled: Manual 1 1 1 Reserved
0 0 RTT(WR) disabled
0 1 RZQ/4 (60Ω NOM) 1 Enabled: Automatic
1 0 RZQ/2 (120Ω NOM)
1 1 Reserved

Note: 1. MR2[17, 14:11, 8, and 2:0] are reserved for future use and must all be programmed to 0.

CAS WRITE Latency (CWL)

CAS write latency (CWL) is defined by MR2[5:3] and is the delay, in clock cycles, from
the releasing of the internal write to the latching of the first data in. CWL must be cor-
rectly set to the corresponding operating clock frequency (see Figure 54). The overall
WRITE latency (WL) is equal to CWL + AL (Figure 52 (page 148)).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 2 (MR2)

Figure 55: CAS WRITE Latency

T0 T1 T2 T6 T11 T12 T13 T14

CK#

CK

Command ACTIVE n WRITE n NOP NOP NOP NOP NOP NOP

tRCD (MIN)

DQS, DQS#

AL = 5 CWL = 6

DQ DI DI DI DI
n n+1 n+2 n+3

WL = AL + CWL = 11

Indicates break
Transitioning Data Don’t Care
in time scale

AUTO SELF REFRESH (ASR)

Mode register MR2[6] is used to disable/enable the ASR function. When ASR is disabled,
the self refresh mode’s refresh rate is assumed to be at the normal 85°C limit (some-
times referred to as 1x refresh rate). In the disabled mode, ASR requires the user to en-
sure the DRAM never exceeds a case temperature ( T C) of 85°C while in self refresh, un-
less the user enables the SRT function when T C is between 85°C and 95°C.
Enabling ASR assumes the DRAM self refresh rate is changed automatically from 1x to
2x when T C exceeds 85°C. This enables the user to operate the DRAM beyond the stand-
ard 85°C limit up to the optional extended temperature range of 95°C while in self re-
fresh mode.
The standard self refresh current test specifies test conditions for normal T C (85°C) only,
meaning that if ASR is enabled, the standard self refresh current specifications do not
apply (see Extended Temperature Usage (page 189)).

SELF REFRESH TEMPERATURE (SRT)

Mode register MR2[7] is used to disable/enable the SRT function. When SRT is disabled,
the self refresh mode’s refresh rate is assumed to be at the normal 85°C limit (some-
times referred to as 1x refresh rate). In the disabled mode, SRT requires the user to en-
sure the DRAM never exceeds a T C of 85°C while in self refresh mode, unless the user
enables ASR.
When SRT is enabled, the DRAM self refresh is changed internally from 1x to 2x, regard-
less of T C. This enables the user to operate the DRAM beyond the standard 85°C limit up
to the optional extended temperature range of 95°C while in self refresh mode. The
standard self refresh current test specifies test conditions for normal T C (85°C) only,
meaning that if SRT is enabled, the standard self refresh current specifications do not
apply (see Extended Temperature Usage (page 189)).

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 2 (MR2)

SRT versus ASR

If the normal T C limit of 85°C is not exceeded, then neither SRT nor ASR is required, and
both can be disabled throughout operation. However, if the extended temperature op-
tion of 95°C is needed, the user is required to provide a 2x refresh rate during manual
refresh and to enable either the SRT or the ASR to ensure self refresh is performed at the
2x rate.
SRT forces the DRAM to switch the internal self refresh rate from 1x to 2x. Self refresh is
performed at the 2x refresh rate regardless of the case temperature.
ASR automatically switches the DRAM’s internal self refresh rate from 1x to 2x. Howev-
er, while in self refresh mode, ASR enables the refresh rate to automatically adjust be-
tween 1x and 2x over the supported temperature range. One other disadvantage of ASR
is the DRAM cannot always switch from a 1x to 2x refresh rate at an exact T C of 85°C.
Although the DRAM will support data integrity when it switches from a 1x to 2x refresh
rate, it may switch at a temperature lower than 85°C.
Since only one mode is necessary, SRT and ASR cannot be enabled at the same time.

Dynamic On-Die Termination (ODT)

The dynamic ODT (RTT(WR)) feature is defined by MR2[10, 9]. Dynamic ODT is enabled
when a value is selected for the dynamic ODT resistance RTT(WR). This new DDR3
SDRAM feature enables the ODT termination resistance value to change without issu-
ing an MRS command, essentially changing the ODT termination on-the-fly.
With dynamic ODT (RTT(WR)) enabled, the DRAM switches from nominal ODT (RTT,nom)
to dynamic ODT (RTT(WR)) when beginning a WRITE burst, and subsequently switches
back to normal ODT (RTT,nom) at the completion of the WRITE burst. If R TT,nom is disa-
bled, the RTT,nom value will be High-Z. Special timing parameters must be adhered to
when dynamic ODT (RTT(WR)) is enabled: ODTLcnw, ODTLcwn4, ODTLcwn8, ODTH4,
ODTH8, and tADC.
Dynamic ODT is only applicable during WRITE cycles. If normal ODT (R TT,nom) is disa-
bled, dynamic ODT (RTT(WR)) is still permitted. RTT,nom and RTT(WR) can be used inde-
pendent of one another. Dynamic ODT is not available during write leveling mode, re-
gardless of the state of ODT (RTT,nom). For details on dynamic ODT operation, refer to
the Dynamic ODT section of the data sheet.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)

Mode Register 3 (MR3)

The mode register 3 (MR3) controls additional features and functions not available in
the other mode registers. Currently defined is the MULTIPURPOSE REGISTER (MPR).
This function is controlled via the bits shown in the figure below. The MR3 is program-
med via the LOAD MODE command and retains the stored information until it is pro-
grammed again or until the device loses power. Reprogramming the MR3 register will
not alter the contents of the memory array, provided it is reprogrammed correctly. The
MR3 register must be loaded when all banks are idle and no data bursts are in progress,
and the controller must wait the specified time tMRD and tMOD before initiating a sub-
sequent operation.

Figure 56: Mode Register 3 (MR3) Definition

BA2 BA1 BA0 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus

17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Mode register 3 (MR3)

01 1 1 01 01 01 01 01 01 01 01 01 01 01 01 MPR MPR_RF

M16 M15 Mode Register M2 MPR Enable M1 M0 MPR READ Function

0 0 Mode register set (MR0) 0 Normal DRAM operations2 0 0 Predefined pattern3
0 1 Mode register set 1 (MR1) 1 Dataflow from MPR 0 1 Reserved
1 0 Mode register set 2 (MR2) 1 0 Reserved
1 1 Mode register set 3 (MR3) 1 1 Reserved

Notes: 1. MR3[17 and 14:3] are reserved for future use and must all be programmed to 0.
2. When MPR control is set for normal DRAM operation, MR3[1, 0] will be ignored.
3. Intended to be used for READ synchronization.

MULTIPURPOSE REGISTER (MPR)

The MULTIPURPOSE REGISTER (MPR) function is used to output a predefined system
timing calibration bit sequence. Bit 2 is the master bit that enables or disables access to
the MPR register, and bits 1 and 0 determine which mode the MPR is placed in. The ba-
sic concept of the multipurpose register is shown in Figure 57 (page 156).
If MR3[2] = 0, then MPR access is disabled, and the DRAM operates in normal mode.
However, if MR3[2] = 1, then the DRAM no longer outputs normal read data but outputs
MPR data as defined by MR3[0, 1]. If MR3[0, 1] = 00, then a predefined read pattern for
system calibration is selected.
To enable the MPR, the MRS command is issued to MR3, and MR3[2] = 1. Prior to issu-
ing the MRS command, all banks must be in the idle state (all banks are precharged,
and tRP is met). When the MPR is enabled, any subsequent READ or RDAP commands
are redirected to the multipurpose register. The resulting operation when a READ or
RDAP command is issued, is defined by MR3[1:0] when the MPR is enabled (see Table
95 (page 157)). When the MPR is enabled, only READ or RDAP commands are allowed
until a subsequent MRS command is issued with the MPR disabled (MR3[2] = 0). Power-
down mode, self refresh, and any other non-READ/RDAP commands are not allowed
during MPR enable mode. The RESET function is supported during MPR enable mode.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)

Figure 57: MPR Block Diagram

Memory core

MR3[2] = 0 (MPR off)

Multipurpose register
predefined data for READs

MR3[2] = 1 (MPR on)

DQ, DM, DQS, DQS#

Notes: 1. A predefined data pattern can be read out of the MPR with an external READ com-
mand.
2. MR3[2] defines whether the data flow comes from the memory core or the MPR. When
the data flow is defined, the MPR contents can be read out continuously with a regular
READ or RDAP command.

Table 94: MPR Functional Description of MR3 Bits

MR3[2] MR3[1:0]
MPR MPR READ Function Function
0 “Don’t Care” Normal operation, no MPR transaction
All subsequent READs come from the DRAM memory array
All subsequent WRITEs go to the DRAM memory array
1 A[1:0] Enable MPR mode, subsequent READ/RDAP commands defined by bits 1 and
(see Table 95 (page 157)) 2

MPR Functional Description

The JEDEC MPR definition enables either a prime DQ (DQ0 on x4 and x8; on x16, DQ0 =
lower byte and DQ8 = upper byte) to output the MPR data with the remaining DQ driv-
en LOW, or all DQ to output the MPR data. The MPR readout supports fixed READ burst
and READ burst chop (MRS and OTF via A12/BC#) with regular READ latencies and AC
timings applicable, provided the DLL is locked as required.
MPR addressing for a valid MPR read is as follows:
• A[1:0] must be set to 00 as the burst order is fixed per nibble.
• A2 selects the burst order: BL8, A2 is set to 0, and the burst order is fixed to 0, 1, 2, 3, 4,
5, 6, 7.
• For burst chop 4 cases, the burst order is switched on the nibble base along with the
following:
– A2 = 0; burst order = 0, 1, 2, 3
– A2 = 1; burst order = 4, 5, 6, 7

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 2Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)

• Burst order bit 0 (the first bit) is assigned to LSB, and burst order bit 7 (the last bit) is
assigned to MSB.
• A[9:3] are “Don’t Care.”
• A10 is “Don’t Care.”
• A11 is “Don’t Care.”
• A12: Selects burst chop mode on-the-fly, if enabled within MR0.
• A13 is a “Don’t Care”
• BA[2:0] are “Don’t Care.”

MPR Address Definitions and Bursting Order

The MPR currently supports a single data format. This data format is a predefined read
pattern for system calibration. The predefined pattern is always a repeating 01 bit pat-
tern.
Examples of the different types of predefined READ pattern bursts are shown in the fol-
lowing figures.

Table 95: MPR Readouts and Burst Order Bit Mapping

Burst Read
MR3[2] MR3[1:0] Function Length A[2:0] Burst Order and Data Pattern
1 00 READ predefined pattern BL8 000 Burst order: 0, 1, 2, 3, 4, 5, 6, 7
for system calibration Predefined pattern: 01010101
BC4 000 Burst order: 0, 1, 2, 3
Predefined pattern: 0101
BC4 100 Burst order: 4, 5, 6, 7
Predefined pattern: 0101
1 01 RFU n/a n/a n/a
n/a n/a n/a
n/a n/a n/a
1 10 RFU n/a n/a n/a
n/a n/a n/a
n/a n/a n/a
1 11 RFU n/a n/a n/a
n/a n/a n/a
n/a n/a n/a

Note: 1. Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selec-
ted MPR agent.

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Figure 58: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout

T0 Ta0 Tb0 Tb1 Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10
CK#
CK
Command PREA MRS READ1 NOP NOP NOP NOP NOP NOP NOP NOP MRS NOP NOP Valid

tRP tMOD tMPRR tMOD

Bank address 3 Valid 3

A[1:0] 0 02 Valid

A2 1 02 0

A[9:3] 00 Valid 00

A10/AP 1 0 Valid 0

A11 0 Valid 0

A12/BC# 0 Valid 1 0

A[15:13] 0 Valid 0
158

RL

DQS, DQS#

DQ
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2Gb: x4, x8, x16 DDR3L SDRAM

Indicates break
Don’t Care
in time scale

Notes: 1. READ with BL8 either by MRS or OTF.

2. Memory controller must drive 0 on A[2:0].

Mode Register 3 (MR3)

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Figure 59: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout
T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
CK#
CK
Command PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP NOP NOP MRS Valid
tRP tMOD tCCD tMPRR tMOD

Bank address 3 Valid Valid 3

A[1:0] 0 02 02 Valid

A2 1 02 12 0

A[9:3] 00 Valid Valid 00

A10/AP 1 0 Valid Valid 0

A11 0 Valid Valid 0

A12/BC# 0 Valid Valid 1 0

A[15:13] 0 Valid Valid 0

RL
159

DQS, DQS#
RL
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DQ

2Gb: x4, x8, x16 DDR3L SDRAM

Indicates break Don’t Care
in time scale

Notes: 1. READ with BL8 either by MRS or OTF.

2. Memory controller must drive 0 on A[2:0].

Mode Register 3 (MR3)

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Figure 60: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble
T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
CK#
CK
Command PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP MRS NOP NOP Valid
tRF tMOD tCCD tMPRR tMOD

Bank address 3 Valid Valid 3

A[1:0] 0 02 02 Valid

A2 1 03 14 0

A[9:3] 00 Valid Valid 00

A10/AP 1 0 Valid Valid 0

A11 0 Valid Valid 0

A12/BC# 0 Valid 1 Valid 1 0

A[15:13] 0 Valid Valid 0

RL
160

DQS, DQS#

RL

DQ
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2Gb: x4, x8, x16 DDR3L SDRAM

Indicates break Don’t Care
in time scale

Notes: 1. READ with BC4 either by MRS or OTF.

2. Memory controller must drive 0 on A[1:0].

Mode Register 3 (MR3)

3. A2 = 0 selects lower 4 nibble bits 0 . . . 3.
4. A2 = 1 selects upper 4 nibble bits 4 . . . 7.
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Figure 61: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble
T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
CK#
CK
Command PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP MRS NOP NOP Valid
tRF tMOD tCCD tMPRR tMOD

Bank address 3 Valid Valid 3

A[1:0] 0 02 02 Valid

A2 1 13 04 0

A[9:3] 00 Valid Valid 00

A10/AP 1 0 Valid Valid 0

A11 0 Valid Valid 0

A12/BC# 0 Valid 1 Valid 1 0

A[15:13] 0 Valid Valid 0

RL
161

DQS, DQS#
RL

DQ
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2Gb: x4, x8, x16 DDR3L SDRAM

Indicates break Don’t Care
in time scale

Notes: 1. READ with BC4 either by MRS or OTF.

2. Memory controller must drive 0 on A[1:0].

Mode Register 3 (MR3)

3. A2 = 1 selects upper 4 nibble bits 4 . . . 7.
4. A2 = 0 selects lower 4 nibble bits 0 . . . 3.
© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
MODE REGISTER SET (MRS) Command

MPR Read Predefined Pattern

The predefined read calibration pattern is a fixed pattern of 01010101. The following is
an example of using the predetermined read calibration pattern. The example is to per-
form multiple reads from the MPR to do system-level read timing calibration based on
the predefined standard pattern.
The following protocol outlines the steps used to perform the read calibration:
1. Precharge all banks.
2. After tRP is satisfied, set MRS, MR3[2] = 1 and MR3[1:0] = 00. This redirects all sub-
sequent reads and loads the predefined pattern into the MPR. As soon as tMRD
and tMOD are satisfied, the MPR is available.
3. Data WRITE operations are not allowed until the MPR returns to the normal
DRAM state.
4. Issue a READ with burst order information (all other address pins are “Don’t
Care”):
• A[1:0] = 00 (data burst order is fixed starting at nibble)
• A2 = 0 (for BL8, burst order is fixed as 0, 1, 2, 3, 4, 5, 6, 7)
• A12 = 1 (use BL8)
5. After RL = AL + CL, the DRAM bursts out the predefined read calibration pattern
(01010101).
6. The memory controller repeats the calibration reads until read data capture at
memory controller is optimized.
7. After the last MPR read burst and after tMPRR has been satisfied, issue MRS,
MR3[2] = 0, and MR3[1:0] = “Don’t Care” to the normal DRAM state. All subse-
quent read and write accesses will be regular reads and writes from/to the DRAM
array.
8. When tMRD and tMOD are satisfied from the last MRS, the regular DRAM com-
mands (such as activating a memory bank for regular read or write access) are
permitted.

MODE REGISTER SET (MRS) Command

The mode registers are loaded via inputs BA[2:0], A[13:0]. BA[2:0] determine which
mode register is programmed:
• BA2 = 0, BA1 = 0, BA0 = 0 for MR0
• BA2 = 0, BA1 = 0, BA0 = 1 for MR1
• BA2 = 0, BA1 = 1, BA0 = 0 for MR2
• BA2 = 0, BA1 = 1, BA0 = 1 for MR3
The MRS command can only be issued (or re-issued) when all banks are idle and in the
precharged state (tRP is satisfied and no data bursts are in progress). The controller
must wait the specified time tMRD before initiating a subsequent operation such as an
ACTIVATE command (see Figure 48 (page 142)). There is also a restriction after issuing
an MRS command with regard to when the updated functions become available. This
parameter is specified by tMOD. Both tMRD and tMOD parameters are shown in Figure
48 (page 142) and Figure 49 (page 143). Violating either of these requirements will result
in unspecified operation.

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 2Gb: x4, x8, x16 DDR3L SDRAM
ZQ CALIBRATION Operation

ZQ CALIBRATION Operation
The ZQ CALIBRATION command is used to calibrate the DRAM output drivers (RON)
and ODT values (RTT) over process, voltage, and temperature, provided a dedicated
240Ω (±1%) external resistor is connected from the DRAM’s ZQ ball to V SSQ.
DDR3 SDRAM require a longer time to calibrate RON and ODT at power-up initialization
and self refresh exit, and a relatively shorter time to perform periodic calibrations.
DDR3 SDRAM defines two ZQ CALIBRATION commands: ZQCL and ZQCS. An example
of ZQ calibration timing is shown below.
All banks must be precharged and tRP must be met before ZQCL or ZQCS commands
can be issued to the DRAM. No other activities (other than issuing another ZQCL or
ZQCS command) can be performed on the DRAM channel by the controller for the du-
ration of tZQinit or tZQoper. The quiet time on the DRAM channel helps accurately cali-
brate RON and ODT. After DRAM calibration is achieved, the DRAM should disable the
ZQ ball’s current consumption path to reduce power.
ZQ CALIBRATION commands can be issued in parallel to DLL RESET and locking time.
Upon self refresh exit, an explicit ZQCL is required if ZQ calibration is desired.
In dual-rank systems that share the ZQ resistor between devices, the controller must not
enable overlap of tZQinit, tZQoper, or tZQCS between ranks.

Figure 62: ZQ CALIBRATION Timing (ZQCL and ZQCS)

T0 T1 Ta0 Ta1 Ta2 Ta3 Tb0 Tb1 Tc0 Tc1 Tc2
CK#

CK

Command ZQCL NOP NOP NOP Valid Valid ZQCS NOP NOP NOP Valid

Address Valid Valid Valid

A10 Valid Valid Valid

CKE 1 Valid Valid 1 Valid

ODT 2 Valid Valid 2 Valid

Activ-
DQ 3 High-Z Activities 3 High-Z ities
tZQinit or tZQoper tZQCS

Indicates break Don’t Care

in time scale

Notes: 1. CKE must be continuously registered HIGH during the calibration procedure.
2. ODT must be disabled via the ODT signal or the MRS during the calibration procedure.
3. All devices connected to the DQ bus should be High-Z during calibration.

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 2Gb: x4, x8, x16 DDR3L SDRAM
ACTIVATE Operation

ACTIVATE Operation
Before any READ or WRITE commands can be issued to a bank within the DRAM, a row
in that bank must be opened (activated). This is accomplished via the ACTIVATE com-
mand, which selects both the bank and the row to be activated.
After a row is opened with an ACTIVATE command, a READ or WRITE command may
be issued to that row, subject to the tRCD specification. However, if the additive latency
is programmed correctly, a READ or WRITE command may be issued prior to tRCD
(MIN). In this operation, the DRAM enables a READ or WRITE command to be issued
after the ACTIVATE command for that bank, but prior to tRCD (MIN) with the require-
ment that (ACTIVATE-to-READ/WRITE) + AL ≥ tRCD (MIN) (see Posted CAS Additive
Latency). tRCD (MIN) should be divided by the clock period and rounded up to the next
whole number to determine the earliest clock edge after the ACTIVATE command on
which a READ or WRITE command can be entered. The same procedure is used to con-
vert other specification limits from time units to clock cycles.
When at least one bank is open, any READ-to-READ command delay or WRITE-to-
WRITE command delay is restricted to tCCD (MIN).
A subsequent ACTIVATE command to a different row in the same bank can only be is-
sued after the previous active row has been closed (precharged). The minimum time in-
terval between successive ACTIVATE commands to the same bank is defined by tRC.
A subsequent ACTIVATE command to another bank can be issued while the first bank is
being accessed, which results in a reduction of total row-access overhead. The mini-
mum time interval between successive ACTIVATE commands to different banks is de-
fined by tRRD. No more than four bank ACTIVATE commands may be issued in a given
tFAW (MIN) period, and the tRRD (MIN) restriction still applies. The tFAW (MIN) param-

eter applies, regardless of the number of banks already opened or closed.

Figure 63: Example: Meeting tRRD (MIN) and tRCD (MIN)

T0 T1 T2 T3 T4 T5 T8 T9 T10 T11
CK#

CK

Command ACT NOP NOP ACT NOP NOP NOP NOP NOP RD/WR

Address Row Row Col

BA[2:0] Bank x Bank y Bank y

tRRD tRCD

Indicates break
Don’t Care
in time scale

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 2Gb: x4, x8, x16 DDR3L SDRAM
ACTIVATE Operation

Figure 64: Example: tFAW

T0 T1 T4 T5 T8 T9 T10 T11 T19 T20
CK#

CK

Command ACT NOP ACT NOP ACT NOP ACT NOP NOP ACT

Address
Row Row Row Row Row

BA[2:0] Bank a Bank b Bank c Bank d Bank ey

tRRD

tFAW

Indicates break
Don’t Care
in time scale

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 2Gb: x4, x8, x16 DDR3L SDRAM
READ Operation

READ Operation
READ bursts are initiated with a READ command. The starting column and bank ad-
dresses are provided with the READ command and auto precharge is either enabled or
disabled for that burst access. If auto precharge is enabled, the row being accessed is
automatically precharged at the completion of the burst. If auto precharge is disabled,
the row will be left open after the completion of the burst.
During READ bursts, the valid data-out element from the starting column address is
available READ latency (RL) clocks later. RL is defined as the sum of posted CAS additive
latency (AL) and CAS latency (CL) (RL = AL + CL). The value of AL and CL is programma-
ble in the mode register via the MRS command. Each subsequent data-out element is
valid nominally at the next positive or negative clock edge (that is, at the next crossing
of CK and CK#). Figure 65 shows an example of RL based on a CL setting of 8 and an AL
setting of 0.

Figure 65: READ Latency

T0 T7 T8 T9 T10 T11 T12 T12
CK#

CK

Command READ NOP NOP NOP NOP NOP NOP NOP

Bank a,
Address Col n
CL = 8, AL = 0

DQS, DQS#

DO
DQ n

Indicates break
Transitioning Data Don’t Care
in time scale

Notes: 1. DO n = data-out from column n.

2. Subsequent elements of data-out appear in the programmed order following DO n.
DQS, DQS# is driven by the DRAM along with the output data. The initial LOW state on
DQS and HIGH state on DQS# is known as the READ preamble (tRPRE). The LOW state
on DQS and the HIGH state on DQS#, coincident with the last data-out element, is
known as the READ postamble (tRPST). Upon completion of a burst, assuming no other
commands have been initiated, the DQ goes High-Z. A detailed explanation of tDQSQ
(valid data-out skew), tQH (data-out window hold), and the valid data window are de-
picted in Figure 76 (page 174). A detailed explanation of tDQSCK (DQS transition skew
to CK) is also depicted in Figure 76 (page 174).
Data from any READ burst may be concatenated with data from a subsequent READ
command to provide a continuous flow of data. The first data element from the new
burst follows the last element of a completed burst. The new READ command should be
issued tCCD cycles after the first READ command. This is shown for BL8 in Figure 66
(page 168). If BC4 is enabled, tCCD must still be met, which will cause a gap in the data
output, as shown in Figure 67 (page 168). Nonconsecutive READ data is reflected in
Figure 68 (page 169). DDR3 SDRAM does not allow interrupting or truncating any
READ burst.

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 2Gb: x4, x8, x16 DDR3L SDRAM
READ Operation

Data from any READ burst must be completed before a subsequent WRITE burst is al-
lowed. An example of a READ burst followed by a WRITE burst for BL8 is shown in Fig-
ure 69 (page 169) (BC4 is shown in Figure 70 (page 170)). To ensure the READ data is
completed before the WRITE data is on the bus, the minimum READ-to-WRITE timing
is RL + tCCD - WL + 2 tCK.
A READ burst may be followed by a PRECHARGE command to the same bank, provided
auto precharge is not activated. The minimum READ-to-PRECHARGE command spac-
ing to the same bank is four clocks and must also satisfy a minimum analog time from
the READ command. This time is called tRTP (READ-to-PRECHARGE). tRTP starts AL
cycles later than the READ command. Examples for BL8 are shown in Figure 71 (page
170) and BC4 in Figure 72 (page 171). Following the PRECHARGE command, a subse-
quent command to the same bank cannot be issued until tRP is met. The PRECHARGE
command followed by another PRECHARGE command to the same bank is allowed.
However, the precharge period will be determined by the last PRECHARGE command
issued to the bank.
If A10 is HIGH when a READ command is issued, the READ with auto precharge func-
tion is engaged. The DRAM starts an auto precharge operation on the rising edge, which
is AL + tRTP cycles after the READ command. DRAM support a tRAS lockout feature (see
Figure 74 (page 171)). If tRAS (MIN) is not satisfied at the edge, the starting point of the
auto precharge operation will be delayed until tRAS (MIN) is satisfied. If tRTP (MIN) is
not satisfied at the edge, the starting point of the auto precharge operation is delayed
until tRTP (MIN) is satisfied. In case the internal precharge is pushed out by tRTP, tRP
starts at the point at which the internal precharge happens (not at the next rising clock
edge after this event). The time from READ with auto precharge to the next ACTIVATE
command to the same bank is AL + (tRTP + tRP)*, where * means rounded up to the next
integer. In any event, internal precharge does not start earlier than four clocks after the
last 8n-bit prefetch.

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Figure 66: Consecutive READ Bursts (BL8)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14
CK#
CK

Command1 READ NOP NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

tCCD

Bank, Bank,
Address2 Col n Col b

tRPRE tRPST

DQS, DQS#

DQ3 DO DO DO DO DO DO DO DO DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 n+4 n+5 n+6 n+7 b b+1 b+2 b+3 b+4 b+5 b+6 b+7
RL = 5
RL = 5

Transitioning Data Don’t Care

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ command at T0
and T4.
3. DO n (or b) = data-out from column n (or column b).
4. BL8, RL = 5 (CL = 5, AL = 0).
168

Figure 67: Consecutive READ Bursts (BC4)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14
CK#
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CK

Command1 READ NOP NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

2Gb: x4, x8, x16 DDR3L SDRAM

tCCD

Bank, Bank,
Address2 Col n Col b
tRPRE tRPST tRPRE tRPST

DQS, DQS#

DQ3 DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 b b+1 b+2 b+3
RL = 5
© 2015 Micron Technology, Inc. All rights reserved.

RL = 5

READ Operation
Transitioning Data Don’t Care

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BC4 setting is activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ command at T0
and T4.
3. DO n (or b) = data-out from column n (or column b).
4. BC4, RL = 5 (CL = 5, AL = 0).
2Gb_DDR3L.pdf - Rev. O 09/18 EN
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Figure 68: Nonconsecutive READ Bursts

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
CK#
CK

Command READ NOP NOP NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Address Bank a, Bank a,

Col n Col b

CL = 8
CL = 8

DQS, DQS#

DQ DO DO
n b

Transitioning Data Don’t Care

Notes: 1. AL = 0, RL = 8.
2. DO n (or b) = data-out from column n (or column b).
3. Seven subsequent elements of data-out appear in the programmed order following DO n.
4. Seven subsequent elements of data-out appear in the programmed order following DO b.

Figure 69: READ (BL8) to WRITE (BL8)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
169

CK#
CK

Command1 READ NOP NOP NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP

tWR
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READ-to-WRITE command delay = RL + tCCD + 2tCK - WL tBL = 4 clocks

tWR

Bank, Bank,

2Gb: x4, x8, x16 DDR3L SDRAM

Address2 Col n Col b
tRPRE tRPST tWPRE tWPST

DQS, DQS#

DO DO DO DO DO DO DO DO DI DI DI DI DI DI DI DI
DQ3 n n+1 n+2 n+3 n+4 n+5 n+6 n+7 n n+1 n+2 n+3 n+4 n+5 n+6 n+7

RL = 5 WL = 5
© 2015 Micron Technology, Inc. All rights reserved.

Transitioning Data Don’t Care

1. NOP commands are shown for ease of illustration; other commands may be valid at these times.

READ Operation
Notes:
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at
T0, and the WRITE command at T6.
3. DO n = data-out from column, DI b = data-in for column b.
4. BL8, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
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Figure 70: READ (BC4) to WRITE (BC4) OTF

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
CK#
CK

Command1 READ NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

tWR
READ-to-WRITE command delay = RL + tCCD/2 + 2tCK - WL tBL = 4 clocks
tWTR

Address2 Bank, Bank,

Col n Col b

tRPRE tRPST tWPRE tWPST

DQS, DQS#

DQ3 DO DO DO DO DI DI DI DI
n n+ 1 n+ 2 n+3 n n+ 1 n+2 n+ 3
RL = 5
WL = 5

Transitioning Data Don’t Care

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BC4 OTF setting is activated by MR0[1:0] and A12 = 0 during READ command at T0 and WRITE command at
T4.
170

3. DO n = data-out from column n; DI n = data-in from column b.

4. BC4, RL = 5 (AL - 0, CL = 5), WL = 5 (AL = 0, CWL = 5).

Figure 71: READ to PRECHARGE (BL8)

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T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17

CK#

2Gb: x4, x8, x16 DDR3L SDRAM

CK
Command READ NOP NOP NOP NOP PRE NOP NOP NOP NOP NOP NOP NOP ACT NOP NOP NOP NOP

Address Bank a, Bank a, Bank a,

Col n (or all) Row b
tRTP tRP

DQS, DQS#

DQ DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
tRAS
© 2015 Micron Technology, Inc. All rights reserved.

Transitioning Data Don’t Care

READ Operation
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Figure 72: READ to PRECHARGE (BC4)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
CK#
CK
Command READ NOP NOP NOP NOP PRE NOP NOP NOP NOP NOP NOP NOP ACT NOP NOP NOP NOP

Address Bank a, Bank a, Bank a,

Col n (or all) Row b

tRP

tRTP

DQS, DQS#

DQ DO DO DO DO
n n+1 n+2 n+3
tRAS
Transitioning Data Don’t Care

Figure 73: READ to PRECHARGE (AL = 5, CL = 6)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
CK#
CK

Command READ NOP NOP NOP NOP NOP NOP NOP NOP PRE NOP NOP NOP NOP NOP ACT

Bank a, Bank a, Bank a,

Address Col n (or all) Row b

AL = 5 tRTP tRP

DQS, DQS#
171

DO DO DO DO
DQ n n+1 n+2 n+3
CL = 6

tRAS

Transitioning Data Don’t Care

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 74: READ with Auto Precharge (AL = 4, CL = 6)

2Gb: x4, x8, x16 DDR3L SDRAM

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Ta0
CK#
CK

Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP ACT

Address Bank a, Bank a,

Col n Row b
AL = 4 tRTP (MIN)

DQS, DQS#
© 2015 Micron Technology, Inc. All rights reserved.

DQ DO DO DO DO
n n+1 n+2 n+3
CL = 6

READ Operation
tRAS (MIN) tRP

Indicates break Transitioning Data Don’t Care

in time scale
 2Gb: x4, x8, x16 DDR3L SDRAM
READ Operation

DQS to DQ output timing is shown in Figure 75 (page 173). The DQ transitions between
valid data outputs must be within tDQSQ of the crossing point of DQS, DQS#. DQS must
also maintain a minimum HIGH and LOW time of tQSH and tQSL. Prior to the READ
preamble, the DQ balls will either be floating or terminated, depending on the status of
the ODT signal.
Figure 76 (page 174) shows the strobe-to-clock timing during a READ. The crossing
point DQS, DQS# must transition within ±tDQSCK of the clock crossing point. The data
out has no timing relationship to CK, only to DQS, as shown in Figure 76 (page 174).
Figure 76 (page 174) also shows the READ preamble and postamble. Typically, both
DQS and DQS# are High-Z to save power (VDDQ). Prior to data output from the DRAM,
DQS is driven LOW and DQS# is HIGH for tRPRE. This is known as the READ preamble.
The READ postamble, tRPST, is one half clock from the last DQS, DQS# transition. Dur-
ing the READ postamble, DQS is driven LOW and DQS# is HIGH. When complete, the
DQ is disabled or continues terminating, depending on the state of the ODT signal. Fig-
ure 79 (page 176) demonstrates how to measure tRPST.

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Figure 75: Data Output Timing – tDQSQ and Data Valid Window
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
CK#
CK

Command1 READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

RL = AL + CL

Bank,
Address2 Col n
tDQSQ (MAX)
tDQSQ tRPST
(MAX) tHZDQ
tLZDQ (MAX)
(MIN)
DQS, DQS#
tRPRE tQH tQH

DQ3 (last data valid) DO DO DO DO DO DO DO DO

n n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ3 (first data no longer valid) DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
All DQ collectively DO DO DO DO DO DO DO DO
n n+1 n+2 n+3 n+4 n+5 n+6 n+7

Data valid Data valid

Don’t Care

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
173

2. The BL8 setting is activated by either MR0[1, 0] = 0, 0 or MR0[0, 1] = 0, 1 and A12 = 1 during READ command at
T0.
3. DO n = data-out from column n.
4. BL8, RL = 5 (AL = 0, CL = 5).
Micron Technology, Inc. reserves the right to change products or specifications without notice.

5. Output timings are referenced to VDDQ/2 and DLL on and locked.

6. tDQSQ defines the skew between DQS, DQS# to data and does not define DQS, DQS# to CK.

2Gb: x4, x8, x16 DDR3L SDRAM

7. Early data transitions may not always happen at the same DQ. Data transitions of a DQ can be early or late within
a burst.
© 2015 Micron Technology, Inc. All rights reserved.

READ Operation
 2Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
tHZ and tLZ transitions occur in the same access time as valid data transitions. These
parameters are referenced to a specific voltage level that specifies when the device out-
put is no longer driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ. Figure
77 (page 175) shows a method of calculating the point when the device is no longer
driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ, by measuring the signal
at two different voltages. The actual voltage measurement points are not critical as long
as the calculation is consistent. The parameters tLZDQS, tLZDQ, tHZDQS, and tHZDQ
are defined as single-ended.

Figure 76: Data Strobe Timing – READs

RL measured
to this point
T0 T1 T2 T3 T4 T5 T6
CK

CK#
tDQSCK (MIN) tDQSCK (MIN) tDQSCK (MIN) tDQSCK (MIN) tHZDQS (MIN)

tLZDQS (MIN) tQSH tQSL tQSH tQSL

DQS, DQS#
early strobe
tRPRE tRPST

Bit 0 Bit 1 Bit 2 Bit 3 Bit 4 Bit 5 Bit 6 Bit 7

tLZDQS (MAX) tDQSCK tDQSCK tDQSCK tDQSCK tHZDQS (MAX)

(MAX) (MAX) (MAX) (MAX)

tRPST

DQS, DQS#
late strobe

tRPRE tQSH tQSL tQSH tQSL

Bit 0 Bit 1 Bit 2 Bit 3 Bit 4 Bit 5 Bit 6 Bit 7

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 2Gb: x4, x8, x16 DDR3L SDRAM
READ Operation

Figure 77: Method for Calculating tLZ and tHZ

VOH - xmV VTT + 2xmV

VOH - 2xmV VTT + xmV

tHZDQS, tHZDQ tLZDQS, tLZDQ

VOL + 2xmV VTT - xmV

T2 T1

VOL + xmV VTT - 2xmV

T1 T2

tHZDQS, tHZDQ end point = 2 × T1 - T2 tLZDQS, tLZDQ begin point = 2 × T1 - T2

Notes: 1. Within a burst, the rising strobe edge is not necessarily fixed at tDQSCK (MIN) or tDQSCK
(MAX). Instead, the rising strobe edge can vary between tDQSCK (MIN) and tDQSCK
(MAX).
2. The DQS HIGH pulse width is defined by tQSH, and the DQS LOW pulse width is defined
by tQSL. Likewise, tLZDQS (MIN) and tHZDQS (MIN) are not tied to tDQSCK (MIN) (early
strobe case), and tLZDQS (MAX) and tHZDQS (MAX) are not tied to tDQSCK (MAX) (late
strobe case); however, they tend to track one another.
3. The minimum pulse width of the READ preamble is defined by tRPRE (MIN). The mini-
mum pulse width of the READ postamble is defined by tRPST (MIN).

Figure 78: tRPRE Timing

CK

VTT

CK#
tA tB

DQS VTT
Single-ended signal provided
as background information

tC tD

DQS# VTT

Single-ended signal provided

as background information

T1
tRPRE begins
tRPRE
DQS - DQS# 0V

Resulting differential T2
tRPRE ends
signal relevant for
tRPRE specification

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© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
READ Operation

Figure 79: tRPST Timing

CK

VTT

CK#

tA

DQS VTT
t
Single-ended signal, provided B
as background information

tC
tD
DQS# VTT
Single-ended signal, provided
as background information

tRPST
DQS - DQS# 0V

Resulting differential T1
signal relevant for tRPST begins
tRPST specification T2
tRPST ends

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© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation

WRITE Operation
WRITE bursts are initiated with a WRITE command. The starting column and bank ad-
dresses are provided with the WRITE command, and auto precharge is either enabled or
disabled for that access. If auto precharge is selected, the row being accessed is pre-
charged at the end of the WRITE burst. If auto precharge is not selected, the row will
remain open for subsequent accesses. After a WRITE command has been issued, the
WRITE burst may not be interrupted. For the generic WRITE commands used in Figure
82 (page 179) through Figure 90 (page 184), auto precharge is disabled.
During WRITE bursts, the first valid data-in element is registered on a rising edge of
DQS following the WRITE latency (WL) clocks later and subsequent data elements will
be registered on successive edges of DQS. WRITE latency (WL) is defined as the sum of
posted CAS additive latency (AL) and CAS WRITE latency (CWL): WL = AL + CWL. The
values of AL and CWL are programmed in the MR0 and MR2 registers, respectively. Prior
to the first valid DQS edge, a full cycle is needed (including a dummy crossover of DQS,
DQS#) and specified as the WRITE preamble shown in Figure 82 (page 179). The half
cycle on DQS following the last data-in element is known as the WRITE postamble.
The time between the WRITE command and the first valid edge of DQS is WL clocks
±tDQSS. Figure 83 (page 180) through Figure 90 (page 184) show the nominal case
where tDQSS = 0ns; however, Figure 82 (page 179) includes tDQSS (MIN) and tDQSS
(MAX) cases.
Data may be masked from completing a WRITE using data mask. The data mask occurs
on the DM ball aligned to the WRITE data. If DM is LOW, the WRITE completes normal-
ly. If DM is HIGH, that bit of data is masked.
Upon completion of a burst, assuming no other commands have been initiated, the DQ
will remain High-Z, and any additional input data will be ignored.
Data for any WRITE burst may be concatenated with a subsequent WRITE command to
provide a continuous flow of input data. The new WRITE command can be tCCD clocks
following the previous WRITE command. The first data element from the new burst is
applied after the last element of a completed burst. Figure 83 (page 180) and Figure 84
(page 180) show concatenated bursts. An example of nonconsecutive WRITEs is shown
in Figure 85 (page 181).
Data for any WRITE burst may be followed by a subsequent READ command after tWTR
has been met (see Figure 86 (page 181), Figure 87 (page 182), and Figure 88 (page
183)).
Data for any WRITE burst may be followed by a subsequent PRECHARGE command,
providing tWR has been met, as shown in Figure 89 (page 184) and Figure 90 (page
184).
Both tWTR and tWR starting time may vary, depending on the mode register settings
(fixed BC4, BL8 versus OTF).

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© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation

Figure 80: tWPRE Timing

CK

VTT

CK#

T1
tWPRE begins

DQS - DQS# 0V
tWPRE
T2
Resulting differential tWPRE ends
signal relevant for
tWPRE specification

Figure 81: tWPST Timing

CK

VTT

CK#

tWPST
DQS - DQS# 0V

Resulting differential T1
tWPSTbegins
signal relevant for
tWPST specification
T2
tWPST ends

CCMTD-1725822587-7895
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© 2015 Micron Technology, Inc. All rights reserved.
 2Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation

Figure 82: WRITE Burst

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
CK#
CK

Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

WL = AL + CWL

Bank,
Address2 Col n

tWPRE tDQSS tDSH tDSH tDSH tDSH tWPST

tDQSS (MIN)
DQS, DQS#
tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL

DQ3 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+5 n+6 n+7

tWPRE tDSH tDSH tDSH tDSH tWPST

tDQSS (NOM)
DQS, DQS#
tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL

tDSS tDSS tDSS tDSS tDSS

DQ3 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+5 n+6 n+7

tDQSS

tWPRE tWPST
tDQSS (MAX)
DQS, DQS#
tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL

tDSS tDSS tDSS tDSS tDSS

DQ3 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+5 n+6 n+7

Transitioning Data Don’t Care

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
the WRITE command at T0.
3. DI n = data-in for column n.
4. BL8, WL = 5 (AL = 0, CWL = 5).
5. tDQSS must be met at each rising clock edge.
6. tWPST is usually depicted as ending at the crossing of DQS, DQS#; however, tWPST ac-
tually ends when DQS no longer drives LOW and DQS# no longer drives HIGH.

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© 2015 Micron Technology, Inc. All rights reserved.
2Gb_DDR3L.pdf - Rev. O 09/18 EN
CCMTD-1725822587-7895

Figure 83: Consecutive WRITE (BL8) to WRITE (BL8)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14
CK#
CK

Command1 WRITE NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tCCD tBL = 4 clocks tWR

tWTR

Address2 Valid Valid

tWPST
tWPRE

DQS, DQS#

DQ3 DI DI DI DI DI DI DI DI DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+5 n+6 n+7 b b+1 b+2 b+3 b+4 b+5 b+6 b+7
WL = 5

WL = 5

Transitioning Data Don’t Care

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE commands at
T0 and T4.
3. DI n (or b) = data-in for column n (or column b).
4. BL8, WL = 5 (AL = 0, CWL = 5).
180

Figure 84: Consecutive WRITE (BC4) to WRITE (BC4) via OTF

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14
CK#
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.

Command1 WRITE NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tCCD tBL = 4 clocks tWR

tWTR

2Gb: x4, x8, x16 DDR3L SDRAM

Address2 Valid Valid

tWPRE tWPST tWPRE tWPST

DQS, DQS#

DQ3 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 b b+1 b+2 b+3
WL = 5

WL = 5
© 2015 Micron Technology, Inc. All rights reserved.

Transitioning Data Don’t Care

WRITE Operation
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. BC4, WL = 5 (AL = 0, CWL = 5).
3. DI n (or b) = data-in for column n (or column b).
4. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and T4.
5. If set via MRS (fixed) tWR and tWTR would start T11 (2 cycles earlier).
2Gb_DDR3L.pdf - Rev. O 09/18 EN
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Figure 85: Nonconsecutive WRITE to WRITE

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
CK#
CK
Command WRITE NOP NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Address Valid Valid

WL = CWL + AL = 7
WL = CWL + AL = 7

DQS, DQS#

DQ DI DI DI DI DI DI DI DI DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+5 n+6 n+7 b b+1 b+2 b+3 b+4 b+5 b+6 b+7

DM

Transitioning Data Don't Care

Notes: 1. DI n (or b) = data-in for column n (or column b).

2. Seven subsequent elements of data-in are applied in the programmed order following DO n.
3. Each WRITE command may be to any bank.
4. Shown for WL = 7 (CWL = 7, AL = 0).

Figure 86: WRITE (BL8) to READ (BL8)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 Ta0
CK#
181

CK

Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP READ
tWTR2
Micron Technology, Inc. reserves the right to change products or specifications without notice.

Address3 Valid Valid

2Gb: x4, x8, x16 DDR3L SDRAM

tWPRE tWPST

DQS, DQS#

DQ4 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
WL = 5
© 2015 Micron Technology, Inc. All rights reserved.

Indicates break
Transitioning Data Don’t Care
in time scale

WRITE Operation
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last
write data shown at T9.
3. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and MR0[12] = 1 during the WRITE command
at T0. The READ command at Ta0 can be either BC4 or BL8, depending on MR0[1:0] and the A12 status at Ta0.
4. DI n = data-in for column n.
5. RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
2Gb_DDR3L.pdf - Rev. O 09/18 EN
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Figure 87: WRITE to READ (BC4 Mode Register Setting)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0
CK#
CK

Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP READ

tWTR2

Address3 Valid Valid

tWPRE tWPST

DQS, DQS#

DQ4 DI DI DI DI
n n+1 n+2 n+3
WL = 5

Indicates break
Transitioning Data Don’t Care
in time scale

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last
write data shown at T7.
182

3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0 and the READ command at
Ta0.
4. DI n = data-in for column n.
Micron Technology, Inc. reserves the right to change products or specifications without notice.

5. BC4 (fixed), WL = 5 (AL = 0, CWL = 5), RL = 5 (AL = 0, CL = 5).

2Gb: x4, x8, x16 DDR3L SDRAM

© 2015 Micron Technology, Inc. All rights reserved.

WRITE Operation
2Gb_DDR3L.pdf - Rev. O 09/18 EN
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Figure 88: WRITE (BC4 OTF) to READ (BC4 OTF)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 Tn
CK#
CK

Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP READ

tBL tWTR2
= 4 clocks

Address3 Valid Valid

tWPRE tWPST

DQS, DQS#

DQ4 DI DI DI DI
n n+1 n+2 n+3
WL = 5 RL = 5

Indicates break
Transitioning Data Don’t Care
in time scale

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. tWTR controls the WRITE-to-READ delay to the same device and starts after tBL.
3. The BC4 OTF setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and the READ
command at Tn.
4. DI n = data-in for column n.
183

5. BC4, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).

Micron Technology, Inc. reserves the right to change products or specifications without notice.

2Gb: x4, x8, x16 DDR3L SDRAM

© 2015 Micron Technology, Inc. All rights reserved.

WRITE Operation
 2Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation

Figure 89: WRITE (BL8) to PRECHARGE

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1
CK#
CK

Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE

Address Valid Valid

WL = AL + CWL tWR

DQS, DQS#

DQ BL8 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+5 n+6 n+7

Indicates break
Transitioning Data Don’t Care
in time scale

Notes: 1. DI n = data-in from column n.

2. Seven subsequent elements of data-in are applied in the programmed order following
DO n.
3. Shown for WL = 7 (AL = 0, CWL = 7).

Figure 90: WRITE (BC4 Mode Register Setting) to PRECHARGE

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1
CK#
CK

Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE

Address Valid Valid

WL = AL + CWL tWR

DQS, DQS#

DQ BC4 DI DI DI DI
n n+1 n+2 n+3

Indicates break
Transitioning Data Don’t Care
in time scale

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. The write recovery time (tWR) is referenced from the first rising clock edge after the last
write data is shown at T7. tWR specifies the last burst WRITE cycle until the PRECHARGE
command can be issued to the same bank.
3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0.
4. DI n = data-in for column n.
5. BC4 (fixed), WL = 5, RL = 5.

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 2Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation

Figure 91: WRITE (BC4 OTF) to PRECHARGE

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Tn
CK#
CK

Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE

tWR2

Bank,
Address3 Col n Valid

tWPRE tWPST

DQS, DQS#

DQ4 DI DI DI DI
n n+1 n+2 n+3
WL = 5

Indicates break
Transitioning Data Don’t Care
in time scale

Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. The write recovery time (tWR) is referenced from the rising clock edge at T9. tWR speci-
fies the last burst WRITE cycle until the PRECHARGE command can be issued to the same
bank.
3. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command
at T0.
4. DI n = data-in for column n.
5. BC4 (OTF), WL = 5, RL = 5.

DQ Input Timing
Figure 82 (page 179) shows the strobe-to-clock timing during a WRITE burst. DQS,
DQS# must transition within 0.25tCK of the clock transitions, as limited by tDQSS. All
data and data mask setup and hold timings are measured relative to the DQS, DQS#
crossing, not the clock crossing.
The WRITE preamble and postamble are also shown in Figure 82 (page 179). One clock
prior to data input to the DRAM, DQS must be HIGH and DQS# must be LOW. Then for
a half clock, DQS is driven LOW (DQS# is driven HIGH) during the WRITE preamble,
tWPRE. Likewise, DQS must be kept LOW by the controller after the last data is written

to the DRAM during the WRITE postamble, tWPST.

Data setup and hold times are also shown in Figure 82 (page 179). All setup and hold
times are measured from the crossing points of DQS and DQS#. These setup and hold
values pertain to data input and data mask input.
Additionally, the half period of the data input strobe is specified by tDQSH and tDQSL.

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 2Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation

Figure 92: Data Input Timing

DQS, DQS#
tWPRE tDQSH tDQSL tWPST

DI
DQ b

DM

tDH tDH
tDS tDS

Transitioning Data Don’t Care

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 2Gb: x4, x8, x16 DDR3L SDRAM
PRECHARGE Operation

PRECHARGE Operation
Input A10 determines whether one bank or all banks are to be precharged and, in the
case where only one bank is to be precharged, inputs BA[2:0] select the bank.
When all banks are to be precharged, inputs BA[2:0] are treated as “Don’t Care.” After a
bank is precharged, it is in the idle state and must be activated prior to any READ or
WRITE commands being issued.

SELF REFRESH Operation

The SELF REFRESH operation is initiated like a REFRESH command except CKE is LOW.
The DLL is automatically disabled upon entering SELF REFRESH and is automatically
enabled and reset upon exiting SELF REFRESH.
All power supply inputs (including V REFCA and V REFDQ) must be maintained at valid lev-
els upon entry/exit and during self refresh mode operation. V REFDQ may float or not
drive V DDQ/2 while in self refresh mode under certain conditions:
• VSS < V REFDQ < V DD is maintained.
• VREFDQ is valid and stable prior to CKE going back HIGH.
• The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid.
• All other self refresh mode exit timing requirements are met.
The DRAM must be idle with all banks in the precharge state (tRP is satisfied and no
bursts are in progress) before a self refresh entry command can be issued. ODT must
also be turned off before self refresh entry by registering the ODT ball LOW prior to the
self refresh entry command (see On-Die Termination (ODT) ( for timing requirements).
If RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a “Don’t Care.”
After the self refresh entry command is registered, CKE must be held LOW to keep the
DRAM in self refresh mode.
After the DRAM has entered self refresh mode, all external control signals, except CKE
and RESET#, are “Don’t Care.” The DRAM initiates a minimum of one REFRESH com-
mand internally within the tCKE period when it enters self refresh mode.
The requirements for entering and exiting self refresh mode depend on the state of the
clock during self refresh mode. First and foremost, the clock must be stable (meeting
tCK specifications) when self refresh mode is entered. If the clock remains stable and

the frequency is not altered while in self refresh mode, then the DRAM is allowed to exit
self refresh mode after tCKESR is satisfied (CKE is allowed to transition HIGH tCKESR
later than when CKE was registered LOW). Since the clock remains stable in self refresh
mode (no frequency change), tCKSRE and tCKSRX are not required. However, if the
clock is altered during self refresh mode (if it is turned-off or its frequency changes),
then tCKSRE and tCKSRX must be satisfied. When entering self refresh mode, tCKSRE
must be satisfied prior to altering the clock's frequency. Prior to exiting self refresh
mode, tCKSRX must be satisfied prior to registering CKE HIGH.
When CKE is HIGH during self refresh exit, NOP or DES must be issued for tXS time. tXS
is required for the completion of any internal refresh already in progress and must be
satisfied before a valid command not requiring a locked DLL can be issued to the de-
vice. tXS is also the earliest time self refresh re-entry may occur. Before a command re-
quiring a locked DLL can be applied, a ZQCL command must be issued, tZQOPER tim-
ing must be met, and tXSDLL must be satisfied. ODT must be off during tXSDLL.

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 2Gb: x4, x8, x16 DDR3L SDRAM
SELF REFRESH Operation

Figure 93: Self Refresh Entry/Exit Timing

T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Td0 Te0 Tf0
CK#

CK
tCKSRE1 tCKSRX1

tIS tCPDED tIH tIS

CKE Valid Valid

tCKESR (MIN)1
tIS

ODT2 Valid

ODTL

RESET#2

Command NOP SRE (REF)3 NOP4 SRX (NOP) NOP5 Valid 6 Valid 7

Address Valid Valid

tRP8 tXS6, 9

tXSDLL7, 9
Enter self refresh mode
(synchronous)
Exit self refresh mode
(asynchronous)
Indicates break
Don’t Care
in time scale

Notes: 1. The clock must be valid and stable, meeting tCK specifications at least tCKSRE after en-
tering self refresh mode, and at least tCKSRX prior to exiting self refresh mode, if the
clock is stopped or altered between states Ta0 and Tb0. If the clock remains valid and
unchanged from entry and during self refresh mode, then tCKSRE and tCKSRX do not
apply; however, tCKESR must be satisfied prior to exiting at SRX.
2. ODT must be disabled and RTT off prior to entering self refresh at state T1. If both
RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a “Don’t Care.”
3. Self refresh entry (SRE) is synchronous via a REFRESH command with CKE LOW.
4. A NOP or DES command is required at T2 after the SRE command is issued prior to the
inputs becoming “Don’t Care.”
5. NOP or DES commands are required prior to exiting self refresh mode until state Te0.
6. tXS is required before any commands not requiring a locked DLL.
7. tXSDLL is required before any commands requiring a locked DLL.
8. The device must be in the all banks idle state prior to entering self refresh mode. For
example, all banks must be precharged, tRP must be met, and no data bursts can be in
progress.
9. Self refresh exit is asynchronous; however, tXS and tXSDLL timings start at the first rising
clock edge where CKE HIGH satisfies tISXR at Tc1. tCKSRX timing is also measured so that
tISXR is satisfied at Tc1.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Extended Temperature Usage

Extended Temperature Usage

Micron’s DDR3 SDRAM support the optional extended case temperature (TC) range of
0°C to 95°C. Thus, the SRT and ASR options must be used at a minimum.
The extended temperature range DRAM must be refreshed manually at 2x (double re-
fresh) anytime the case temperature is above 85°C (and does not exceed 95°C). The
manual refresh requirement is accomplished by reducing the refresh period from 64ms
to 32ms. However, self refresh mode requires either ASR or SRT to support the extended
temperature. Thus, either ASR or SRT must be enabled when T C is above 85°C or self
refresh cannot be used until T C is at or below 85°C. Table 96 summarizes the two exten-
ded temperature options and Table 97 summarizes how the two extended temperature
options relate to one another.

Table 96: Self Refresh Temperature and Auto Self Refresh Description

Field MR2 Bits Description

Self Refresh Temperature (SRT)
SRT 7 If ASR is disabled (MR2[6] = 0), SRT must be programmed to indicate TOPER during self refresh:
*MR2[7] = 0: Normal operating temperature range (0°C to 85°C)
*MR2[7] = 1: Extended operating temperature range (0°C to 95°C)
If ASR is enabled (MR2[7] = 1), SRT must be set to 0, even if the extended temperature range is
supported
*MR2[7] = 0: SRT is disabled
Auto Self Refresh (ASR)
ASR 6 When ASR is enabled, the DRAM automatically provides SELF REFRESH power management func-
tions, (refresh rate for all supported operating temperature values)
* MR2[6] = 1: ASR is enabled (M7 must = 0)
When ASR is not enabled, the SRT bit must be programmed to indicate TOPER during SELF REFRESH
operation
* MR2[6] = 0: ASR is disabled; must use manual self refresh temperature (SRT)

Table 97: Self Refresh Mode Summary

MR2[6] MR2[7] Permitted Operating Temperature

(ASR) (SRT) SELF REFRESH Operation Range for Self Refresh Mode
0 0 Self refresh mode is supported in the normal temperature Normal (0°C to 85°C)
range
0 1 Self refresh mode is supported in normal and extended temper- Normal and extended (0°C to 95°C)
ature ranges; When SRT is enabled, it increases self refresh
power consumption
1 0 Self refresh mode is supported in normal and extended temper- Normal and extended (0°C to 95°C)
ature ranges; Self refresh power consumption may be tempera-
ture-dependent
1 1 Illegal

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 2Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode

Power-Down Mode
Power-down is synchronously entered when CKE is registered LOW coincident with a
NOP or DES command. CKE is not allowed to go LOW while an MRS, MPR, ZQCAL,
READ, or WRITE operation is in progress. CKE is allowed to go LOW while any of the
other legal operations (such as ROW ACTIVATION, PRECHARGE, auto precharge, or RE-
FRESH) are in progress. However, the power-down IDD specifications are not applicable
until such operations have completed. Depending on the previous DRAM state and the
command issued prior to CKE going LOW, certain timing constraints must be satisfied
(as noted in Table 98). Timing diagrams detailing the different power-down mode entry
and exits are shown in Figure 94 (page 192) through Figure 103 (page 196).

Table 98: Command to Power-Down Entry Parameters

Last Command Prior to

DRAM Status CKE LOW1 Parameter (Min) Parameter Value Figure
Idle or active ACTIVATE tACTPDEN 1tCK Figure 101 (page 195)
Idle or active PRECHARGE tPRPDEN 1tCK Figure 102 (page 196)
Active READ or READAP tRDPDEN RL + 4tCK + 1tCK Figure 97 (page 193)
Active WRITE: BL8OTF, BL8MRS, tWRPDEN WL + 4tCK + tWR/tCK Figure 98 (page 194)
BC4OTF
Active WRITE: BC4MRS WL + 2tCK + tWR/tCK Figure 98 (page 194)
Active WRITEAP: BL8OTF, BL8MRS, tWRAPDEN WL + 4tCK + WR + 1tCK Figure 99 (page 194)
BC4OTF
Active WRITEAP: BC4MRS WL + 2tCK + WR + 1tCK Figure 99 (page 194)
Idle REFRESH tREFPDEN 1tCK Figure 100 (page 195)
Power-down REFRESH tXPDLL Greater of 10tCK or 24ns Figure 104 (page 197)
Idle MODE REGISTER SET tMRSPDEN tMOD Figure 103 (page 196)

Note: 1. If slow-exit mode precharge power-down is enabled and entered, ODT becomes asyn-
chronous tANPD prior to CKE going LOW and remains asynchronous until tANPD +
tXPDLL after CKE goes HIGH.

Entering power-down disables the input and output buffers, excluding CK, CK#, ODT,
CKE, and RESET#. NOP or DES commands are required until tCPDED has been satis-
fied, at which time all specified input/output buffers are disabled. The DLL should be in
a locked state when power-down is entered for the fastest power-down exit timing. If
the DLL is not locked during power-down entry, the DLL must be reset after exiting
power-down mode for proper READ operation as well as synchronous ODT operation.
During power-down entry, if any bank remains open after all in-progress commands are
complete, the DRAM will be in active power-down mode. If all banks are closed after all
in-progress commands are complete, the DRAM will be in precharge power-down
mode. Precharge power-down mode must be programmed to exit with either a slow exit
mode or a fast exit mode. When entering precharge power-down mode, the DLL is
turned off in slow exit mode or kept on in fast exit mode.
The DLL also remains on when entering active power-down. ODT has special timing
constraints when slow exit mode precharge power-down is enabled and entered. Refer
to Asynchronous ODT Mode (page 213) for detailed ODT usage requirements in slow

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 2Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode

exit mode precharge power-down. A summary of the two power-down modes is listed in
Table 99 (page 191).
While in either power-down state, CKE is held LOW, RESET# is held HIGH, and a stable
clock signal must be maintained. ODT must be in a valid state but all other input signals
are “Don’t Care.” If RESET# goes LOW during power-down, the DRAM will switch out of
power-down mode and go into the reset state. After CKE is registered LOW, CKE must
remain LOW until tPD (MIN) has been satisfied. The maximum time allowed for power-
down duration is tPD (MAX) (9 × tREFI).
The power-down states are synchronously exited when CKE is registered HIGH (with a
required NOP or DES command). CKE must be maintained HIGH until tCKE has been
satisfied. A valid, executable command may be applied after power-down exit latency,
tXP, and tXPDLL have been satisfied. A summary of the power-down modes is listed be-

low.
For specific CKE-intensive operations, such as repeating a power-down-exit-to-refresh-
to-power-down-entry sequence, the number of clock cycles between power-down exit
and power-down entry may not be sufficient to keep the DLL properly updated. In addi-
tion to meeting tPD when the REFRESH command is used between power-down exit
and power-down entry, two other conditions must be met. First, tXP must be satisfied
before issuing the REFRESH command. Second, tXPDLL must be satisfied before the
next power-down may be entered. An example is shown in Figure 104 (page 197).

Table 99: Power-Down Modes

Power-
DRAM State MR0[12] DLL State Down Exit Relevant Parameters
Active (any bank open) “Don’t Care” On Fast tXP to any other valid command
Precharged 1 On Fast tXP to any other valid command
(all banks precharged) 0 Off Slow tXPDLL to commands that require the DLL to be
locked (READ, RDAP, or ODT on);
tXP to any other valid command

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 2Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode

Figure 94: Active Power-Down Entry and Exit

T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4
CK#

CK
tCK tCH tCL

Command Valid NOP NOP NOP NOP NOP Valid

tPD
tIS tIH

CKE
tIH tIS tCKE (MIN)

Address Valid Valid

tCPDED tXP

Enter power-down Exit power-down

mode mode

Indicates break
Don’t Care
in time scale

Figure 95: Precharge Power-Down (Fast-Exit Mode) Entry and Exit

T0 T1 T2 T3 T4 T5 Ta0 Ta1
CK#
CK
t t t
CK CH CL

Command NOP NOP NOP NOP NOP Valid

t t
CPDED CKE (MIN)

t
t IH
IS
CKE t
IS
t t
PD XP

Enter power-down Exit power-down

mode mode
Indicates break
Don’t Care
in time scale

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 2Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode

Figure 96: Precharge Power-Down (Slow-Exit Mode) Entry and Exit

T0 T1 T2 T3 T4 Ta Ta1 Tb
CK#
CK
tCK tCH tCL

Command PRE NOP NOP NOP NOP Valid 1 Valid 2

tCPDED tCKE (MIN)

tXP

tIS tIH

CKE
tIS tXPDLL

tPD

Enter power-down Exit power-down

mode mode
Indicates break
Don’t Care
in time scale

Notes: 1. Any valid command not requiring a locked DLL.

2. Any valid command requiring a locked DLL.

Figure 97: Power-Down Entry After READ or READ with Auto Precharge (RDAP)
T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Ta8 Ta9 Ta10 Ta11 Ta12
CK#
CK

READ/ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Command RDAP
tIS tCPDED

CKE

Address Valid

RL = AL + CL tPD

DQS, DQS#

DQ BL8 DI DI DI DI DI DI DI DI
n n+1 n+2 n+3 n+4 n+ 5 n+6 n+7

DQ BC4 DI DI DI DI
n n+1 n+2 n+3
tRDPDEN

Power-down or
self refresh entry

Indicates break
Transitioning Data Don’t Care
in time scale

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 2Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode

Figure 98: Power-Down Entry After WRITE

T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 Tb2 Tb3 Tb4
CK#
CK

Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tIS tCPDED

CKE

Address Valid

WL = AL + CWL tWR tPD

DQS, DQS#

DI DI DI DI DI DI DI DI
DQ BL8 n n+1 n+2 n+3 n+4 n+5 n+6 n+7

DQ BC4 DI DI DI DI
n n+1 n+2 n+3

tWRPDEN

Power-down or
self refresh entry1

Indicates break
Transitioning Data Don’t Care
in time scale

Note: 1. CKE can go LOW 2tCK earlier if BC4MRS.

Figure 99: Power-Down Entry After WRITE with Auto Precharge (WRAP)
T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 Tb2 Tb3 Tb4
CK#
CK

Command WRAP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

tIS tCPDED

CKE

Address Valid

A10
WL = AL + CWL WR1 tPD

DQS, DQS#

DI DI DI DI DI DI DI DI
DQ BL8 n n+1 n+2 n+3 n+4 n+5 n+6 n+7

DQ BC4 DI DI DI DI
n n+1 n+2 n+3

tWRAPDEN

Start internal Power-down or

precharge self refresh entry2

Indicates break
Transitioning Data Don’t Care
in time scale

Notes: 1. tWR is programmed through MR0[11:9] and represents tWRmin (ns)/tCK rounded up to
the next integer tCK.
2. CKE can go LOW 2tCK earlier if BC4MRS.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode

Figure 100: REFRESH to Power-Down Entry

T0 T1 T2 T3 Ta0 Ta1 Ta2 Tb0

CK#

CK
tCK tCH tCL

Command REFRESH NOP NOP NOP NOP Valid

tCPDED tCKE (MIN)

tIS tPD

CKE

tREFPDEN tXP (MIN)

tRFC (MIN)1

Indicates break
Don’t Care
in time scale

Note: 1. After CKE goes HIGH during tRFC, CKE must remain HIGH until tRFC is satisfied.

Figure 101: ACTIVATE to Power-Down Entry

T0 T1 T2 T3 T4 T5 T6 T7
CK#
CK
tCK tCH tCL

Command ACTIVE NOP NOP

Address Valid

tCPDED

tIS tPD

CKE

tACTPDEN

Don’t Care

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 2Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode

Figure 102: PRECHARGE to Power-Down Entry

T0 T1 T2 T3 T4 T5 T6 T7
CK#
CK
tCK tCH tCL

Command PRE NOP NOP

All/single
Address bank
tCPDED

tIS tPD

CKE

tPREPDEN

Don’t Care

Figure 103: MRS Command to Power-Down Entry

T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4
CK#

CK
tCK tCH tCL tCPDED

Command MRS NOP NOP NOP NOP NOP

Address Valid

tMRSPDEN tPD

tIS

CKE

Indicates break
Don’t Care
in time scale

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 2Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode

Figure 104: Power-Down Exit to Refresh to Power-Down Entry

T0 T1 T2 T3 T4 Ta0 Ta1 Tb0
CK#
CK
tCK tCH tCL

Command NOP NOP NOP NOP REFRESH NOP NOP

tCPDED tXP1

tIS tIH

CKE
tIS

tPD tXPDLL2

Enter power-down Exit power-down Enter power-down

mode mode mode

Indicates break
Don’t Care
in time scale

Notes: 1. tXP must be satisfied before issuing the command.

2. tXPDLL must be satisfied (referenced to the registration of power-down exit) before the
next power-down can be entered.

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 2Gb: x4, x8, x16 DDR3L SDRAM
RESET Operation

RESET Operation
The RESET signal (RESET#) is an asynchronous reset signal that triggers any time it
drops LOW, and there are no restrictions about when it can go LOW. After RESET# goes
LOW, it must remain LOW for 100ns. During this time, the outputs are disabled, ODT
(RTT) turns off (High-Z), and the DRAM resets itself. CKE should be driven LOW prior to
RESET# being driven HIGH. After RESET# goes HIGH, the DRAM must be re-initialized
as though a normal power-up was executed. All counters, except refresh counters, on
the DRAM are reset, and data stored in the DRAM is assumed unknown after RESET#
has gone LOW.

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 2Gb: x4, x8, x16 DDR3L SDRAM
RESET Operation

Figure 105: RESET Sequence

System RESET
(warm boot)

Stable and
valid clock T0 T1 Ta0 Tb0 Tc0 Td0
tCK

CK#

CK
tCL tCL

t CKSRX1
T = 100ns (MIN)

tIOZ = 20ns
RESET#
tIS
T = 10ns (MIN)

CKE Valid
tIS tIS

ODT Static LOW in case RTT_Nom is enabled at time Ta0, otherwise static HIGH or LOW Valid

tIS

Command NOP MRS MRS MRS MRS ZQCL Valid

DM

Address Code Code Code Code Valid

A10 Code Code Code Code A10 = H Valid

BA0 = L BA0 = H BA0 = H BA0 = L

BA[2:0] BA1 = H BA1 = H BA1 = L BA1 = L Valid
BA2 = L BA2 = L BA2 = L BA2 = L

High-Z
DQS

High-Z
DQ

High-Z
RTT

T = 500µs (MIN) tXPR tMRD tMRD tMRD tMOD

MR2 MR3 MR1 with MR0 with ZQCAL

All voltage DLL RESET
DLL ENABLE tZQinit
supplies valid
and stable DRAM ready
for external tDLLK
commands

Normal
operation

Indicates break Don’t Care

in time scale

Note: 1. The minimum time required is the longer of 10ns or 5 clocks.

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 2Gb: x4, x8, x16 DDR3L SDRAM
On-Die Termination (ODT)

On-Die Termination (ODT)

On-die termination (ODT) is a feature that enables the DRAM to enable/disable and
turn on/off termination resistance for each DQ, DQS, DQS#, and DM for the x4 and x8
configurations (and TDQS, TDQS# for the x8 configuration, when enabled). ODT is ap-
plied to each DQ, UDQS, UDQS#, LDQS, LDQS#, UDM, and LDM signal for the x16 con-
figuration.
ODT is designed to improve signal integrity of the memory channel by enabling the
DRAM controller to independently turn on/off the DRAM’s internal termination resist-
ance for any grouping of DRAM devices. ODT is not supported during DLL disable
mode (simple functional representation shown below). The switch is enabled by the in-
ternal ODT control logic, which uses the external ODT ball and other control informa-
tion.

Figure 106: On-Die Termination

ODT
To other VDDQ/2
circuitry RTT
such as
RCV, Switch
... DQ, DQS, DQS#,
DM, TDQS, TDQS#

Functional Representation of ODT

The value of RTT (ODT termination resistance value) is determined by the settings of
several mode register bits (see Table 105 (page 204)). The ODT ball is ignored while in
self refresh mode (must be turned off prior to self refresh entry) or if mode registers
MR1 and MR2 are programmed to disable ODT. ODT is comprised of nominal ODT and
dynamic ODT modes and either of these can function in synchronous or asynchronous
mode (when the DLL is off during precharge power-down or when the DLL is synchro-
nizing). Nominal ODT is the base termination and is used in any allowable ODT state.
Dynamic ODT is applied only during writes and provides OTF switching from no RTT or
RTT,nom to RTT(WR).
The actual effective termination, RTT(EFF), may be different from RTT targeted due to
nonlinearity of the termination. For RTT(EFF) values and calculations, see Table 51 (page
65).

Nominal ODT
ODT (NOM) is the base termination resistance for each applicable ball; it is enabled or
disabled via MR1[9, 6, 2] (see Mode Register 1 (MR1) Definition), and it is turned on or
off via the ODT ball.

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 2Gb: x4, x8, x16 DDR3L SDRAM
On-Die Termination (ODT)

Table 100: Truth Table – ODT (Nominal)

Note 1 applies to the entire table
MR1[9, 6, 2] ODT Pin DRAM Termination State DRAM State Notes
000 0 RTT,nom disabled, ODT off Any valid 2
000 1 RTT,nom disabled, ODT on Any valid except self refresh, read 3
000–101 0 RTT,nom enabled, ODT off Any valid 2
000–101 1 RTT,nom enabled, ODT on Any valid except self refresh, read 3
110 and 111 X RTT,nom reserved, ODT on or off Illegal

Notes: 1. Assumes dynamic ODT is disabled (see Dynamic ODT (page 202) when enabled).
2. ODT is enabled and active during most writes for proper termination, but it is not illegal
for it to be off during writes.
3. ODT must be disabled during reads. The RTT,nom value is restricted during writes. Dynam-
ic ODT is applicable if enabled.
Nominal ODT resistance RTT,nom is defined by MR1[9, 6, 2], as shown in Mode Register 1
(MR1) Definition. The R TT,nom termination value applies to the output pins previously
mentioned. DDR3 SDRAM supports multiple RTT,nom values based on RZQ/n where n
can be 2, 4, 6, 8, or 12 and RZQ is 240Ω. RTT,nom termination is allowed any time after the
DRAM is initialized, calibrated, and not performing read access, or when it is not in self
refresh mode.
Write accesses use RTT,nom if dynamic ODT (RTT(WR)) is disabled. If RTT,nom is used dur-
ing writes, only RZQ/2, RZQ/4, and RZQ/6 are allowed (see Table 104 (page 203)). ODT
timings are summarized in Table 101 (page 201), as well as listed in the Electrical Char-
acteristics and AC Operating Conditions table.
Examples of nominal ODT timing are shown in conjunction with the synchronous
mode of operation in Synchronous ODT Mode (page 208).

Table 101: ODT Parameters

Definition for All

Symbol Description Begins at Defined to DDR3L Speed Bins Unit
ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ±tAON CWL + AL - 2 tCK

ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) ±tAOF CWL + AL - 2 tCK

tAONPD ODT asynchronous turn-on delay ODT registered HIGH RTT(ON) 2–8.5 ns
tAOFPD ODT asynchronous turn-off delay ODT registered HIGH RTT(OFF) 2–8.5 ns
ODTH4 ODT minimum HIGH time after ODT ODT registered HIGH ODT registered 4tCK tCK

assertion or write (BC4) or write registration LOW

with ODT HIGH
ODTH8 ODT minimum HIGH time after Write registration ODT registered 6tCK tCK

write (BL8) with ODT HIGH LOW

tAON ODT turn-on relative to ODTLon Completion of RTT(ON) See Electrical Charac- ps
completion ODTLon teristics and AC Oper-
ating Conditions table
tAOF ODT turn-off relative to ODTLoff Completion of RTT(OFF) 0.5tCK ± 0.2tCK tCK

completion ODTLoff

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 2Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT

Dynamic ODT
In certain application cases, and to further enhance signal integrity on the data bus, it is
desirable that the termination strength of the DDR3 SDRAM can be changed without
issuing an MRS command, essentially changing the ODT termination on the fly. With
dynamic ODT RTT(WR)) enabled, the DRAM switches from nominal ODT RTT,nom) to dy-
namic ODT RTT(WR)) when beginning a WRITE burst and subsequently switches back to
nominal ODT RTT,nom) at the completion of the WRITE burst. This requirement is sup-
ported by the dynamic ODT feature, as described below.

Dynamic ODT Special Use Case

When DDR3 devices are architect as a single rank memory array, dynamic ODT offers a
special use case: the ODT ball can be wired high (via a current limiting resistor prefer-
red) by having RTT,nom disabled via MR1 and RTT(WR) enabled via MR2. This will allow
the ODT signal not to have to be routed yet the DRAM can provide ODT coverage dur-
ing write accesses.
When enabling this special use case, some standard ODT spec conditions may be viola-
ted: ODT is sometimes suppose to be held low. Such ODT spec violation (ODT not
LOW) is allowed under this special use case. Most notably, if Write Leveling is used, this
would appear to be a problem since RTT(WR) can not be used (should be disabled) and
RTT(NOM) should be used. For Write leveling during this special use case, with the DLL
locked, then RTT(NOM) maybe enabled when entering Write Leveling mode and disabled
when exiting Write Leveling mode. More so, R TT(NOM) must be enabled when enabling
Write Leveling, via same MR1 load, and disabled when disabling Write Leveling, via
same MR1 load if RTT(NOM) is to be used.
ODT will turn-on within a delay of ODTLon + tAON + tMOD + 1CK (enabling via MR1)
or turn-off within a delay of ODTLoff + tAOF + tMOD + 1CK. As seen in the table below,
between the Load Mode of MR1 and the previously specified delay, the value of ODT is
uncertain. this means the DQ ODT termination could turn-on and then turn-off again
during the period of stated uncertainty.

Table 102: Write Leveling with Dynamic ODT Special Case

Begin RTT,nom Uncertainty End RTT,nom Uncertainty I/Os RTT,nom Final State
MR1 load mode command: ODTLon + tAON + tMOD + 1CK DQS, DQS# Drive RTT,nom value

Enable Write Leveling and RTT(NOM) DQs No RTT,nom

MR1 load mode command: ODTLoff + tAOFF + tMOD + 1CK DQS, DQS# No RTT,nom

Disable Write Leveling and RTT(NOM) DQs No RTT,nom

Functional Description
The dynamic ODT mode is enabled if either MR2[9] or MR2[10] is set to 1. Dynamic
ODT is not supported during DLL disable mode so RTT(WR) must be disabled. The dy-
namic ODT function is described below:
• Two RTT values are available—RTT,nom and RTT(WR).
– The value for RTT,nom is preselected via MR1[9, 6, 2].
– The value for RTT(WR) is preselected via MR2[10, 9].

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 2Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT

• During DRAM operation without READ or WRITE commands, the termination is con-
trolled.
– Nominal termination strength RTT,nom is used.
– Termination on/off timing is controlled via the ODT ball and latencies ODTLon and
ODTLoff.
• When a WRITE command (WR, WRAP, WRS4, WRS8, WRAPS4, WRAPS8) is registered,
and if dynamic ODT is enabled, the ODT termination is controlled.
– A latency of ODTLcnw after the WRITE command: termination strength R TT,nom
switches to RTT(WR)
– A latency of ODTLcwn8 (for BL8, fixed or OTF) or ODTLcwn4 (for BC4, fixed or OTF)
after the WRITE command: termination strength R TT(WR) switches back to RTT,nom.
– On/off termination timing is controlled via the ODT ball and determined by ODT-
Lon, ODTLoff, ODTH4, and ODTH8.
– During the tADC transition window, the value of RTT is undefined.
ODT is constrained during writes and when dynamic ODT is enabled (see the table be-
low, Dynamic ODT Specific Parameters). ODT timings listed in the ODT Parameters ta-
ble in On-Die Termination (ODT) also apply to dynamic ODT mode.

Table 103: Dynamic ODT Specific Parameters

Definition for All

DDR3L Speed
Symbol Description Begins at Defined to Bins Unit
ODTLcnw Change from RTT,nom to Write registration RTT switched from RTT,nom WL - 2 tCK

RTT(WR) to RTT(WR)
ODTLcwn4 Change from RTT(WR) to Write registration RTT switched from RTT(WR) 4tCK + ODTL off tCK

RTT,nom (BC4) to RTT,nom

ODTLcwn8 Change from RTT(WR) to Write registration RTT switched from RTT(WR) 6tCK + ODTL off tCK

RTT,nom (BL8) to RTT,nom

tADC RTT change skew ODTLcnw completed RTT transition complete 0.5tCK ± 0.2tCK tCK

Table 104: Mode Registers for RTT,nom

MR1 (RTT,nom)
M9 M6 M2 RTT,nom (RZQ) RTT,nom (Ohm) RTT,nom Mode Restriction
0 0 0 Off Off n/a
0 0 1 RZQ/4 60 Self refresh
0 1 0 RZQ/2 120
0 1 1 RZQ/6 40
1 0 0 RZQ/12 20 Self refresh, write
1 0 1 RZQ/8 30
1 1 0 Reserved Reserved n/a

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 2Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT

Table 104: Mode Registers for RTT,nom (Continued)

MR1 (RTT,nom)
M9 M6 M2 RTT,nom (RZQ) RTT,nom (Ohm) RTT,nom Mode Restriction
1 1 1 Reserved Reserved n/a

Note: 1. RZQ = 240Ω. If RTT,nom is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed.

Table 105: Mode Registers for RTT(WR)

MR2 (RTT(WR))
M10 M9 RTT(WR) (RZQ) RTT(WR) (Ohm)
0 0 Dynamic ODT off: WRITE does not affect RTT,nom
0 1 RZQ/4 60
1 0 RZQ/2 120
1 1 Reserved Reserved

Table 106: Timing Diagrams for Dynamic ODT

Figure and Page Title

Figure 107 (page 205) Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
Figure 108 (page 205) Dynamic ODT: Without WRITE Command
Figure 109 (page 206) Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
Figure 110 (page 207) Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
Figure 111 (page 207) Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4

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Figure 107: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
CK#
CK
Command NOP NOP NOP NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Address Valid
ODTH4 ODTLoff
ODTH4

ODT
ODTLon ODTLcwn4

tAON tADC (MIN) tADC tAOF

(MIN) (MIN) (MIN)
RTT RTT,nom RTT(WR) RTT,nom
tAON (MAX) tADC tADC tAOF (MAX)
(MAX) (MAX)
ODTLcnw

DQS, DQS#

DQ DI DI DI DI
WL n n+ 1 n+ 2 n+ 3

Transitioning Don’t Care

Notes: 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled.
2. ODTH4 applies to first registering ODT HIGH and then to the registration of the WRITE command. In this example,
ODTH4 is satisfied if ODT goes LOW at T8 (four clocks after the WRITE command).
205

Figure 108: Dynamic ODT: Without WRITE Command

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
CK#
CK
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Command Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid

Address

2Gb: x4, x8, x16 DDR3L SDRAM

ODTH4 ODTLoff
ODTLon

ODT
tAON (MAX) tAOF (MIN)
RTT RTT,nom
tAON (MIN) tAOF (MAX)
© 2015 Micron Technology, Inc. All rights reserved.

DQS, DQS#

DQ

Dynamic ODT
Transitioning Don’t Care

Notes: 1. AL = 0, CWL = 5. RTT,nom is enabled and RTT(WR) is either enabled or disabled.

2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW; in this example, ODTH4 is satisfied. ODT reg-
istered LOW at T5 is also legal.
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Figure 109: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
CK#
CK

Command NOP WRS8 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
ODTLcnw

Address Valid

ODTH8 ODTLoff

ODTLon

ODT

tADC (MAX) tAOF (MIN)

RTT RTT(WR)
tAON (MIN)
tAOF (MAX)
ODTLcwn8

DQS, DQS#

WL

DQ DI DI DI DI DI DI DI DI
b b+1 b+2 b+3 b+ 4 b+5 b+6 b+ 7
206

Transitioning Don’t Care

Notes: 1. Via MRS or OTF; AL = 0, CWL = 5. If RTT,nom can be either enabled or disabled, ODT can be HIGH. RTT(WR) is enabled.
2. In this example, ODTH8 = 6 is satisfied exactly.
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2Gb: x4, x8, x16 DDR3L SDRAM

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Dynamic ODT
 2Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT

Figure 110: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
CK#
CK
Command NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
ODTLcnw

Address Valid
ODTH4 ODTLoff

ODT
ODTLon
tADC (MAX) tADC tAOF
(MIN) (MIN)
RTT RTT(WR) RTT,nom
tAON (MIN) tADC tAOF
(MAX) (MAX)
ODTLcwn4

DQS, DQS#

DQ DI DI DI DI
n n+1 n+2 n+3
WL

Transitioning Don’t Care

Notes: 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled.
2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW, so in this example,
ODTH4 is satisfied. ODT registered LOW at T5 is also legal.

Figure 111: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
CK#
CK
Command NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
ODTLcnw

Address Valid
ODTH4 ODTLoff

ODT
tADC (MAX) tAOF (MIN)
ODTLon

RTT RTT(WR)
tAON (MIN) tAOF (MAX)
ODTLcwn4

DQS, DQS#

WL

DQ DI DI DI DI
n n+1 n+2 n+3

Transitioning Don’t Care

Notes: 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom can be either enabled or disabled. If disabled,
ODT can remain HIGH. RTT(WR) is enabled.
2. In this example ODTH4 = 4 is satisfied exactly.

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 2Gb: x4, x8, x16 DDR3L SDRAM
Synchronous ODT Mode

Synchronous ODT Mode

Synchronous ODT mode is selected whenever the DLL is turned on and locked and
when either RTT,nom or RTT(WR) is enabled. Based on the power-down definition, these
modes are:
• Any bank active with CKE HIGH
• Refresh mode with CKE HIGH
• Idle mode with CKE HIGH
• Active power-down mode (regardless of MR0[12])
• Precharge power-down mode if DLL is enabled by MR0[12] during precharge power-
down

ODT Latency and Posted ODT

In synchronous ODT mode, RTT turns on ODTLon clock cycles after ODT is sampled
HIGH by a rising clock edge and turns off ODTLoff clock cycles after ODT is registered
LOW by a rising clock edge. The actual on/off times varies by tAON and tAOF around
each clock edge (see Table 107 (page 209)). The ODT latency is tied to the WRITE laten-
cy (WL) by ODTLon = WL - 2 and ODTLoff = WL - 2.
Since write latency is made up of CAS WRITE latency (CWL) and additive latency (AL),
the AL programmed into the mode register (MR1[4, 3]) also applies to the ODT signal.
The device’s internal ODT signal is delayed a number of clock cycles defined by the AL
relative to the external ODT signal. Thus, ODTLon = CWL + AL - 2 and ODTLoff = CWL +
AL - 2.

Timing Parameters
Synchronous ODT mode uses the following timing parameters: ODTLon, ODTLoff,
ODTH4, ODTH8, tAON, and tAOF. The minimum R TT turn-on time (tAON [MIN]) is the
point at which the device leaves High-Z and ODT resistance begins to turn on. Maxi-
mum RTT turn-on time (tAON [MAX]) is the point at which ODT resistance is fully on.
Both are measured relative to ODTLon. The minimum R TT turn-off time (tAOF [MIN]) is
the point at which the device starts to turn off ODT resistance. The maximum R TT turn
off time (tAOF [MAX]) is the point at which ODT has reached High-Z. Both are measured
from ODTLoff.
When ODT is asserted, it must remain HIGH until ODTH4 is satisfied. If a WRITE com-
mand is registered by the DRAM with ODT HIGH, then ODT must remain HIGH until
ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (see Figure 113 (page 210)).
ODTH4 and ODTH8 are measured from ODT registered HIGH to ODT registered LOW
or from the registration of a WRITE command until ODT is registered LOW.

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Table 107: Synchronous ODT Parameters

Definition for All

Symbol Description Begins at Defined to DDR3L Speed Bins Unit
ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ±tAON CWL + AL - 2 tCK

ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) ±tAOF CWL +AL - 2 tCK

ODTH4 ODT minimum HIGH time after ODT ODT registered HIGH or write regis- ODT registered LOW 4tCK tCK

assertion or WRITE (BC4) tration with ODT HIGH

ODTH8 ODT minimum HIGH time after WRITE Write registration with ODT HIGH ODT registered LOW 6tCK tCK

(BL8)
tAON ODT turn-on relative to ODTLon Completion of ODTLon RTT(ON) See Electrical Charac- ps
completion teristics and AC Oper-
ating Conditions ta-
ble
tAOF ODT turn-off relative to ODTLoff Completion of ODTLoff RTT(OFF) 0.5tCK ± 0.2tCK tCK

completion

Figure 112: Synchronous ODT

209

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15

CK#
CK
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CKE

AL = 3 AL = 3 CWL - 2

2Gb: x4, x8, x16 DDR3L SDRAM

ODT

ODTH4 (MIN) ODTLoff = CWL + AL - 2

Synchronous ODT Mode

ODTLon = CWL + AL - 2

tAON t
(MIN) AOF (MIN)
© 2015 Micron Technology, Inc. All rights reserved.

RTT RTT,nom
tAON tAOF (MAX)
(MAX)

Transitioning Don’t Care

Note: 1. AL = 3; CWL = 5; ODTLon = WL = 6.0; ODTLoff = WL - 2 = 6. RTT,nom is enabled.

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Figure 113: Synchronous ODT (BC4)

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
CK#
CK

CKE

Command NOP NOP NOP NOP NOP NOP NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

ODTH4 ODTH4 (MIN)

ODTH4

ODT

ODTLoff = WL - 2 ODTLoff = WL - 2
ODTLon = WL - 2 ODTLon = WL - 2

tAON tAOF (MIN) tAON (MAX) tAOF

(MIN) (MIN)
RTT RTT,nom RTT,nom
tAON (MAX) tAON (MIN) tAOF (MAX)
tAOF (MAX)

Transitioning Don’t Care

Notes: 1. WL = 7. RTT,nom is enabled. RTT(WR) is disabled.

2. ODT must be held HIGH for at least ODTH4 after assertion (T1).
3. ODT must be kept HIGH ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (T7).
4. ODTH is measured from ODT first registered HIGH to ODT first registered LOW or from the registration of the
210

WRITE command with ODT HIGH to ODT registered LOW.

5. Although ODTH4 is satisfied from ODT registered HIGH at T6, ODT must not go LOW before T11 as ODTH4 must
also be satisfied from the registration of the WRITE command at T7.
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2Gb: x4, x8, x16 DDR3L SDRAM

Synchronous ODT Mode
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 2Gb: x4, x8, x16 DDR3L SDRAM
Synchronous ODT Mode

ODT Off During READs

Because the device cannot terminate and drive at the same time, RTT must be disabled
at least one-half clock cycle before the READ preamble by driving the ODT ball LOW (if
either RTT,nom or RTT(WR) is enabled). RTT may not be enabled until the end of the post-
amble, as shown in the following example.
Note: ODT may be disabled earlier and enabled later than shown in Figure 114
(page 212).

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Figure 114: ODT During READs

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
CK#
CK
Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Address Valid
ODTLon = CWL + AL - 2
ODTLoff = CWL + AL - 2

ODT
tAOF (MIN)
RTT RTT,nom RTT,nom
tAOF (MAX) tAON (MAX)
RL = AL + CL

DQS, DQS#
DQ DI DI DI DI DI DI DI DI
b b+1 b+2 b+3 b+4 b+5 b+6 b+7

Transitioning Don’t Care

Note: 1. ODT must be disabled externally during READs by driving ODT LOW. For example, CL = 6; AL = CL - 1 = 5; RL = AL
+ CL = 11; CWL = 5; ODTLon = CWL + AL - 2 = 8; ODTLoff = CWL + AL - 2 = 8. RTT,nom is enabled. RTT(WR) is a “Don’t
Care.”
212
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2Gb: x4, x8, x16 DDR3L SDRAM

Synchronous ODT Mode
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 2Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous ODT Mode

Asynchronous ODT Mode

Asynchronous ODT mode is available when the DRAM runs in DLL on mode and when
either RTT,nom or RTT(WR) is enabled; however, the DLL is temporarily turned off in pre-
charged power-down standby (via MR0[12]). Additionally, ODT operates asynchronous-
ly when the DLL is synchronizing after being reset. See Power-Down Mode (page 190)
for definition and guidance over power-down details.
In asynchronous ODT timing mode, the internal ODT command is not delayed by AL
relative to the external ODT command. In asynchronous ODT mode, ODT controls RTT
by analog time. The timing parameters tAONPD and tAOFPD replace ODTLon/tAON
and ODTLoff/tAOF, respectively, when ODT operates asynchronously.
The minimum RTT turn-on time (tAONPD [MIN]) is the point at which the device termi-
nation circuit leaves High-Z and ODT resistance begins to turn on. Maximum RTT turn-
on time (tAONPD [MAX]) is the point at which ODT resistance is fully on. tAONPD
(MIN) and tAONPD (MAX) are measured from ODT being sampled HIGH.
The minimum RTT turn-off time (tAOFPD [MIN]) is the point at which the device termi-
nation circuit starts to turn off ODT resistance. Maximum RTT turn-off time (tAOFPD
[MAX]) is the point at which ODT has reached High-Z. tAOFPD (MIN) and tAOFPD
(MAX) are measured from ODT being sampled LOW.

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Figure 115: Asynchronous ODT Timing with Fast ODT Transition

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17

CK#
CK

CKE
tIH tIS tIH tIS

ODT

tAONPD (MIN) tAOFPD (MIN)

RTT RTT,nom
tAONPD (MAX) tAOFPD (MAX)

Transitioning Don’t Care

Note: 1. AL is ignored.

Table 108: Asynchronous ODT Timing Parameters for All Speed Bins

Symbol Description Min Max Unit

tAONPD Asynchronous RTT turn-on delay (power-down with DLL off) 2 8.5 ns
tAOFPD Asynchronous RTT turn-off delay (power-down with DLL off) 2 8.5 ns
214
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2Gb: x4, x8, x16 DDR3L SDRAM

Asynchronous ODT Mode
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 2Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous ODT Mode

Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry)

There is a transition period around power-down entry (PDE) where the DRAM’s ODT
may exhibit either synchronous or asynchronous behavior. This transition period oc-
curs if the DLL is selected to be off when in precharge power-down mode by the setting
MR0[12] = 0. Power-down entry begins tANPD prior to CKE first being registered LOW,
and ends when CKE is first registered LOW. tANPD is equal to the greater of ODTLoff +
1tCK or ODTLon + 1tCK. If a REFRESH command has been issued, and it is in progress
when CKE goes LOW, power-down entry ends tRFC after the REFRESH command, rath-
er than when CKE is first registered LOW. Power-down entry then becomes the greater
of tANPD and tRFC - REFRESH command to CKE registered LOW.
ODT assertion during power-down entry results in an RTT change as early as the lesser
of tAONPD (MIN) and ODTLon × tCK + tAON (MIN), or as late as the greater of tAONPD
(MAX) and ODTLon × tCK + tAON (MAX). ODT de-assertion during power-down entry
can result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff × tCK +
tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff × tCK + tAOF (MAX).

Table 109 (page 216) summarizes these parameters.

If AL has a large value, the uncertainty of the state of RTT becomes quite large. This is
because ODTLon and ODTLoff are derived from the WL; and WL is equal to CWL + AL.
Figure 116 (page 216) shows three different cases:
• ODT_A: Synchronous behavior before tANPD.
• ODT_B: ODT state changes during the transition period with tAONPD (MIN) <
ODTLon × tCK + tAON (MIN) and tAONPD (MAX) > ODTLon × tCK + tAON (MAX).
• ODT_C: ODT state changes after the transition period with asynchronous behavior.

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Table 109: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period

Description Min Max

Power-down entry transition period Greater of: tANPD or tRFC - refresh to CKE LOW
(power-down entry)
Power-down exit transition period tANPD + tXPDLL
(power-down exit)
ODT to RTT turn-on delay Lesser of: tAONPD (MIN) (2ns) or Greater of: tAONPD (MAX) (8.5ns) or
(ODTLon = WL - 2) ODTLon × tCK + tAON (MIN) ODTLon × tCK + tAON (MAX)
ODT to RTT turn-off delay Lesser of: tAOFPD (MIN) (2ns) or Greater of: tAOFPD (MAX) (8.5ns) or
(ODTLoff = WL - 2) ODTLoff × tCK + tAOF (MIN) ODTLoff × tCK + tAOF (MAX)
tANPD WL - 1 (greater of ODTLoff + 1 or ODTLon + 1)

Figure 116: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Ta0 Ta1 Ta2 Ta3

CK#
CK

CKE
216

Command NOP REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
tRFC (MIN)
tANPD

PDE transition period

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ODT A
synchronous
tAOF (MIN)
DRAM RTT A

2Gb: x4, x8, x16 DDR3L SDRAM

RTT,nom
synchronous ODTLoff + tAOFPD (MIN)
ODTLoff tAOF (MAX)
tAOFPD (MAX)
ODT B
asynchronous

Asynchronous ODT Mode

or synchronous
tAOFPD (MIN)
DRAM RTT B
RTT,nom
asynchronous
or synchronous ODTLoff + tAOFPD (MAX)
© 2015 Micron Technology, Inc. All rights reserved.

ODT C
asynchronous
tAOFPD (MIN)
DRAM RTT C RTT,nom
asynchronous
tAOFPD (MAX)

Indicates break
Transitioning Don’t Care
in time scale

Note: 1. AL = 0; CWL = 5; ODTL(off) = WL - 2 = 3.

 2Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous to Synchronous ODT Mode Transition (Power-
Down Exit)

Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)

The DRAM’s ODT can exhibit either asynchronous or synchronous behavior during
power-down exit (PDX). This transition period occurs if the DLL is selected to be off
when in precharge power-down mode by setting MR0[12] to 0. Power-down exit begins
tANPD prior to CKE first being registered HIGH, and ends tXPDLL after CKE is first reg-

istered HIGH. tANPD is equal to the greater of ODTLoff + 1tCK or ODTLon + 1tCK. The
transition period is tANPD + tXPDLL.
ODT assertion during power-down exit results in an RTT change as early as the lesser of
tAONPD (MIN) and ODTLon × tCK + tAON (MIN), or as late as the greater of tAONPD

(MAX) and ODTLon × tCK + tAON (MAX). ODT de-assertion during power-down exit
may result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff × tCK +
tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff × tCK + tAOF (MAX).

Table 109 (page 216) summarizes these parameters.

If AL has a large value, the uncertainty of the RTT state becomes quite large. This is be-
cause ODTLon and ODTLoff are derived from WL, and WL is equal to CWL + AL. Figure
117 (page 218) shows three different cases:
• ODT C: Asynchronous behavior before tANPD.
• ODT B: ODT state changes during the transition period, with tAOFPD (MIN) < ODTL-
off × tCK + tAOF (MIN), and ODTLoff × tCK + tAOF (MAX) > tAOFPD (MAX).
• ODT A: ODT state changes after the transition period with synchronous response.

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Figure 117: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit
T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Tb0 Tb1 Tb2 Tc0 Tc1 Tc2 Td0 Td1
CK#
CK

CKE

COMMAND NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

tANPD tXPDLL

PDX transition period

ODT A
asynchronous
tAOFPD (MIN)
DRAM RTT A
RTT,nom

Asynchronous to Synchronous ODT Mode Transition (Power-

asynchronous
tAOFPD ODTLoff + tAOF (MIN)
(MAX)
ODT B tAOFPD (MAX)
asynchronous
or synchronous
RTT B tAOFPD (MIN)
asynchronous RTT,nom
or synchronous
ODTLoff + tAOF (MAX) ODTLoff tAOF (MAX)

ODT C
synchronous tAOF (MIN)
DRAM RTT C
RTT,nom
synchronous
218

Indicates break
Transitioning Don’t Care
in time scale

Note: 1. CL = 6; AL = CL - 1; CWL = 5; ODTLoff = WL - 2 = 8.

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2Gb: x4, x8, x16 DDR3L SDRAM

© 2015 Micron Technology, Inc. All rights reserved.

Down Exit)
 2Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous to Synchronous ODT Mode Transition (Power-
Down Exit)

Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse)

If the time in the precharge power-down or idle states is very short (short CKE LOW
pulse), the power-down entry and power-down exit transition periods overlap. When
overlap occurs, the response of the DRAM’s RTT to a change in the ODT state can be
synchronous or asynchronous from the start of the power-down entry transition period
to the end of the power-down exit transition period, even if the entry period ends later
than the exit period.
If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit
and power-down entry transition periods overlap. When this overlap occurs, the re-
sponse of the DRAM’s RTT to a change in the ODT state may be synchronous or asyn-
chronous from the start of power-down exit transition period to the end of the power-
down entry transition period.

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Figure 118: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4

CK#
CK

Command REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

CKE

PDE transition period

tANPD

tRFC (MIN)

Asynchronous to Synchronous ODT Mode Transition (Power-

PDX transition period

tANPD tXPDLL

Short CKE low transition period (R TT change asynchronous or synchronous)

Indicates break
Transitioning Don’t Care
in time scale
220

Note: 1. AL = 0, WL = 5, tANPD = 4.

Figure 119: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping
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T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4

CK#

2Gb: x4, x8, x16 DDR3L SDRAM

CK

Command NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

CKE

tANPD tXPDLL
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tANPD

Short CKE HIGH transition period (RTT change asynchronous or synchonous)

Down Exit)
Indicates break
Transitioning Don’t Care
in time scale

Note: 1. AL = 0, WL = 5, tANPD = 4.
 2Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous to Synchronous ODT Mode Transition (Power-
Down Exit)

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Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.

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