Date:

recHfer ad deive Ahe

nue
OCplain the Revation of full
factor.
espyession for iRole
Ue and Ue halt
Ane ConertsS oth
ketfiey
>A fun waue into pulsaing oC oP
Sigral flow thvaug h
yiles t an Ac NP diret current
set of diodes to
8y using a divecion for both halues.
a load in same
Tuo main Confguvaions
forme Y Yectiier
taped tYOns
) (entex
wque oridge yectifier.
2) Fun Vat Vonsinwt
Vmsinw t
Vin
out Rut

Ful uwaue Recfey

Vi

RL
V

NG COLLEGE
 ExRressionfoy viele Fattor:
amont of Ac comporent
R:ooe fattor quanti hes the
in yecifed olf

Y lac)
Vac Vac
for fu waue etiiey

(Vm
Date : .*ss*****
SHEET No.

Draw he cirit iagram of yative clamper and

eRpain its okYabon
Ans ixut Tjog am ot ve clamper

Vin
cko)

SA -ue clamex fs a ctstuit that shiytS the entijre ie

Sgral in we direcion
Tt (onsists of a diode ,coagattor vesis tor.
’Ouving siive half yle:
" Diode is forulavd based
" CaRacitoY dharges o Peak 1)P voltage (vm)
ourirg negatve hatt ycle:
" diode beromes NeRrse biased.
The charged (oRaitor atS like a vollage SOurte and
its votlaqe to the i|P:
his (auses uqve form to shi5t down ward, making
-Ne ReakS q0 further bflbud Zevo.
The shaRe ot wave form remains same
Shifle d.
Ony its Qc level is
cla mPers ae widery used in TU ve(eiverS,
’e levels
OSülo StoPes conm monia ton ciruits to ie veferente

V.R. SIDDHARTHA ENGINEERING C LLEGE

 o dowbie ended ipper (rtutS
brkiny iinple
5) esainihe
An

Vo

ciruits
Dosde Ended ciRpex
woking Rriniple:
a type ot waue shaing ciruit
’A diole ended chpeex Cvit is
Yange by cipping
’ hatt imits the amitude ot an ile to specite
of tuo diodes conneced in larallel aut in eeaIe
’ T consists
wave shapping,amehtude
in apliationS suh as
-tis iruit 5 useful
Iimiing, sgna yotes ing:
o\age ereds the tue cipfing euel oY goes
’uhen the inpt
below he ue uipping level Poffasitey ovienteddi de)
cirut Uses two
’oulble - ended cliRRev uOhageto
Ponding
eath uwih (ovres
(onnecRd in series
uilh a seRevate altage souYe.
>eath diode
civluit hat lies ov ermove s both t e -ve
’ t is an elertronic
foYm
for bons of iP uQve hmes alana
- t ons sls of too dio des in ofosi diectonS, ome
zener dio Nes to set desived
Uith Ne eene otaoge Soue oY
ipeing fuints uotaqe leuel
HmitS he olp signal Bly wB defned
 Datesese**e******** SHEET No. . . . . . s .

WDauw and ex Qain the infut ovtut havaer sti(S of

(ommon emitler ontguvaton:
common emiller (ontguation:

>yp is afaken lw tolector $emit er (ve)

Inut Chayatievstis:
DDhe ayaph is Aotted blw ase tunent ond base emitter
Voltage caled ie hava tevStic

’ h e outRut volkage (vce) iS set to a constant

value
’he 1 wtage (u8E) i5 vavied , and ovresfonding
ie curent is measuved and reCorde,d fov each VCe
Value
that a
>he (uve or ilf charatersi(S Yesemnbles
Rorord -blased diode
hiS haraer stic we assume the olP
To dyaw
uhih is veuesse biasecd of base emit0Y
yol\ag e

V.R. SIDDHARTHA ENGINEERING COLLEGE

CLfut hara (lersics
clectoY emittpr ltage vce) on
S The qrah ltled blu on -ayis witk constant
X- ag*S lketor (uent (re)
ase cuvVent (T6).

VE
ohile
oith o\P voltage
houS he olP (uvrenNt vavieS
’hiS
crent is held constant.
1R constant valye.
bYrent set to a eath vefvesen t
The ip series 0f
(urves,
(er sticS are
he olP ha va (urrent.
(onstat
base
uvaton
ditferent emiteY (onfg
Ooq rarm of omMo
 elidate he Oferation of Erhancemet MOFET wth drain
and Yonsfer chavatesic9
MosFET Melal ode semicondutor field eteet Tansistuy)
A2
5Mo5fET I tupes P channel N hannele
>on he hasis of chorg e formaion Neation tlassified into
enhanement ode depleton mode.
SIn enhancement mode type of trarsistoY which is noimalls
oFF to oN.
Tn DeRletion yRe tansis or normaly oN tvansis tor and
need to appiy qate oltage to oFF hannel.
qare - o l y s i o n

-oi de

hi5 io channel enhanemet

ynbol of osFET iS
|D

Jiannel
n-thannel

V.R. SIDDHARTHA ENGINEERING COLLEGE

 Orain charaee
(x-axis)
’Plot of TO (y-axis) vs V0s

oY VSzVth
"InitiallY, T se S \inearly wih os (ohmic vegion)
inches of
AL highey v0s, hannel

ShouoS 3 regiDnS cut -of chmi,and satuyation.

Transfexr haraleysies
(x-axis)
>prot of To (9-axis) vs V6s
cut -off tegioni fo V6S UEh,TO=0
Aboue treshold : fov Vs 7Vth,
TO K(Vss,- Vn)
K= Proess (orsicant

3Shouws avakolc veaior blw I0

Drajn "Transfer
Velaion shi blw TO V6S
at variOUS UGS. at tonstant VOs (satuva ton)

Vetv)
 (0Eplain concept oq stabi hty (actor and

A
Stabiity factor: Tt o measeop how well
a transis tor ampltfe Crcuit can matrtain

1ts pqomance deyptte changc

-tyranistor charactetisti co r othee cakna forces
Tbs importane
istor
i) Conestent pefovmances: Enscoes tran
wores cu infeneled

t) Temnp seistancu: inimizes'yact of ttmp

clanga
i) Reliability: Guauantes contistent opeataon
aCross dittcen tran#storr

Formla i
Tce collechor cueeint

Lco hevee s atucaton cauent

•Ico

Dmportarne in self bias conqaltoo

Tn selt btas contigeation sta biety o acheved
feedback The Stabi li hy tattor helps the
thouf
-ve

detemune kouw well circeet can manlais

dutgnns
Stable opuatuy point dyple chang in enp
 serpoS (oiquration:
ram.
diag
wih eat
TFET
of varsis tor) useS
o R e r c t i o n

rat
he
>JFETSunion ferd effect a n s i s t o r

o
Iostra
te. unigo\ay thOugh

controlled (urrent
of
uoltage
he flouw Orain.
is a control and
JFET
electric
feld to
dw
souY(e and gate
hannel
an (hannel
Semiconduttov

forming
in blw
juntion is
SA
Jate

deuile.
Curre nt
voitage - controled eYminal (otrols
ats as qnte
SIFET
apied to the and drain termina|s.
a uoitage sure
fow blw the
the cuvent
due to veuerse -biased
high input imped qnte Power,
-hei
sgnitRtant auantage for low-
qate iuncion is
high-efiieney acications.

V.R. SIDDHARTHA ENGINEERING COLLEGE

 SIFE is a uel\age ontrole d deuice sith 3 erminals
) ate
’wrent floUos froM dain to surte throgh a semiconductDy
channel :
vevevse biased
S gat - Sbre juntion is ayay S
Dvain souYte.
D001age is aRlied blw souYte
dw gate
S e t veverse bas uo1tage is applied
Controled
-> Drat n curent is
benaues ike a ariable vesistoy.
S fo smal VOS, JFET
uwidth
qate Voltage Contr ols the Channel
SThe ro directy on gate
depends on V6S
’ The dai CuYent
(uient sour(e
iS yoltage-(ontOled
yFET
 Date e*e****** SHEET No. -

Comfave he eftecHye ness ot thermister, Sensistoy and

diode (ompeneaion techniques

Ans Thex mfs er (ompensatin

shavely uoith temPerature, giving
’ Resislance nanges
brge aviaton.
tempevatuye (omPen64tion
Suseful for oroad nonlinear , veguvi ng
curve is
Resistane vs 4emleratuYe
linearization dnuits
Pvecise (omRensation for wide ambientt variatiors
’ ride S eeratuye coefkuent
> Tes mistor haue o e
vedute the bse -emiter yortage and
s is used to
\enp ise5
Collec toY (uwent as
SersistoY Compensa ion'
Je Rmpevatare effient
SSensiStoy have a
colletkoy
It 0Sused to decreace the kase cuYrent and
(unent as tem riseS he ofevainh
is efechue in stabi i zing
Sensistoy comlensoton
aginst temP
Pöint of YansistbYs ineavly uith tempevatuye.
Resisance inveases a\most
’
OUer o modevate \emp vange
>effectve
but usualy slowey han
thermistorS
han
caste
disdes

ENGINEERING COLLEGE
V.R,SIDDHARTHA
 Dode conmfensatton
bosR-emitk
oio des ave used to comnRersate for vaviationS in
VOltag e ov (olletor (uyrent
(ompensokon is et fecthve in slabillting the operaing Roint
-5otode
yaviations
ot YansistorS gainst leme
widely avaija ble ond (an be eosily inegvated into
0iodeS ave
tvansistoY iuits
eftect (omlaved to thermistoyssensistovs
-’smater tompensation
-’ (es S sensiive very inear y fast best foy onchil
junci on emp tatking
SensistoY
themistov Oiode

VBE
RE
VBE
Re
( DfseuLes about self- bla, op trantitor and
donve cpccon for opatirypoint
Vcc dividas
Suy bias Dr voltag
bias tranngor hai
wwthod that s voltaA
divid hetork CRI R2)
with emitte rerstor Cee, to
Re Crtati 'a staßt opeca ting paint
This setp Stabiuzng circceih
reducei mpack o temp
VotB age dvide Vaul alors Atranyior paLomat
bias cirCuit Cages.
Eprcion tor oF
Vb vec Rb2
(pblt Rbe)

Ve Vb-Vbe
Te Ve
Re

CP1y le

Vce Vec - Tc Re

T Vcc Rb2 Vbe)

Rblt Rb2.

Vie Vcc/Vec Rba Voe) R

Re.

LC= vec Rb2

(RbltRb2) -Vbe
Re
Vee Vcc - T Rc