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EC Material Ramana

EC transistors

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0% found this document useful (0 votes)
60 views9 pages

EC Material Ramana

EC transistors

Uploaded by

GREENY blacky
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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trb—-him plifier-— en" ee eee @ Refinitior’ Ste: ahing of ignal with out change i in shape tr * Frequency » x Seeeee reece et output yt: Fo) Ad chreuik 40 act ax an -Anplifiler, input ‘| funckion most be forward bias, ourpul- emogt be wevetae biased + ; . : caren Beas Coutaietin ont ot an Art ce ES ete Coe Vee — TS forward bias the input junction C cmittey bese Junctioa] Nec — Te weverbe bias the ouput Janckon, {i Ceollectos bate. junction], | Re — Source Rerigtance . i Re — load Resigtance . (Ce, Ce — Blocking capacitance —> ve Mout | A. During nature ot Coupling capacttor, which coupling ac, i | Representation * —S AS — > Pl which’ “bioers | “Re } Cot) i Emitler curicnt emitter cunment Emitler cunent CAC t 0C), | ietic —@® Mee - teRa —— © halt cycle, fomward bias potitive vi Hence, tput 2. During neg ative emitter of ror nature ot makes increase Brerare of Tc woltage decreaser Chamctretiy 2 1) Saput, qnd Output D Onity carmen gain. S) High worrege gar- Ay eatfona Vay base. 4 hier hale cycle, foaca junction incre Ge which cause 2g @ - Hence fom O° 7 are Bn - phage o Conity =D. cenitkr base junction decreases. “thip makes decrease eh Gmitter Cf.) ftom eg —O- curent Chee) $0, collector decreases i A. Acie ag. cument Source « Civcuik — deacription wee — : ep R tomoavd bian the Emitter base. Junction . Nec — To Revetne bias the collector base Janction . be- Source reriptance ke - Load restgtance- @Lce — Blocking capacitance which blocs De Ce coupling capacitance which coping | Remese pote 2 | Bee OC emitter curvert— ve AC mition ceerren ‘ ‘ dol omits ME ACER. ie > 7 run Wored | Mos = yer eh ig = tic —O@ | | of emitier Jonction increases & fe Which i tom ey O- Sr, Outpee | fon ey ©. negative half boone a. Buring | nature of emiticr ase Imates decroate of te phicl output ig from A @ + Hence, tron 94-0 - A, uring fogttive half cycle , forsard Increases this maker oe, eee ee uottage decreases fonoasd bias cycle reeager thi y Jynetion dee , cae &. 2° No tage case O- increases bier nate | J 5) Cp, Ce3 Blocking capacitance bili h BE be Chase tev 6514 w@ coupling capacitance which coupling 4 a. Migh veollage gain 2: Udyh Curent gain i Be High — power wr : | woking — | Mout = Mee + eRe —O 7 tee Bele —@ i, half cy cle , Foavard b6%¢ Weetor “junction Mhewaue, hich cauter | Ss Gnpuk and cutpat ome out g phage C10) ter teabons A Widely Used at bmpiior 4. Baring, posse | nature of bare col Commen Colleat, (it) nly ot on ete cee ee be Amp itler — ase OF lee fon ef @ + Hence cubpet Voth, h% | momaie -fom dnerecon. i@ 63D cle , foward biar yy as Buring regative halt ey collector junction To fonvasd bias input junction CBase collector] | i 12) Vee —¥ TW revert bias eutpd junztion | Clmitey base) 2D kai —> Source resiptunce. j u) R, —> fowd sresip bon ce C harac tern! ad ) ugh cConrmnt ein. 2) Onity Voltage qn. a) 6ntgh in put impe dence. a) Low Output — impedance. s) dypab and output axe inphase.. Applicaton so —_ _t) Used for impedance matching C Bu fee) - im Why ce mode. in twoidely ied th * cumplitier civeuth SU pe a. High | ALO tage qe o: High Curent goin 7 3s High power gain | q Sultabu : é itable -for mult - tage co nnech er) oprahng pert wad (ine mat be aol lhe middle af ampli ser for a circuit Aw ack as an igtor eto Blasio The proper flow of Few nignd collector cumedt collector cunmt] Co and maintainance of proper collect +o emitter volinge ie Enon as Transigtor Basing. Need Rote Sleting 2 an arplkinr civeuite Opeacting pont” must be chooren at the middle of the sod line - So, that” follosing conditions sil get. A+ Proper yero stgnal collector cument flowe, 2. Minimum bere to erdiver voltage 2. Minimum collector ty erviter voltage. TTYre of biasing chris 4. Raed vias circuit: s 2, Collector +o bare bins clvcuit. a Bias circuit with ernitter yesigtance 4 Molinge divider bing circuit (OY potentval divider bia chcuit (ov @8tt bias Sut obreuiite Coy Univeral biot eivarib> Stability x- pees Ss When the ternperatirre changes (+) atone ton in veplaced , @perating point CVee,Ie ) nee fetal for fait ompteston the opetiqg pone must be Fined - wethe Procesy Of matirg operating pont independent of Aernpesature. changes (et) vertation in bansig tox promoter, ab tno as Stabiliys'on. | Need. toc ataletligation = | “The follosing are “He fac toy the. etabillty of the opmating pont - that afect whey ove ja “Ternperatoure dependents ot Ley jv a (Ses PSee CPSen fer P. | where = carmen gate Be . i Gee Reetne gatnation GO \ Me Aoutler for) every We raiving tempe rat | | for Geamanium, And for every Se verging | Acmpaature for Bilicon Wansis tox. Va. Se changes GiNH change TH Hm PEON, BWW replacement — of hoatator |) Pichangey So Te changer. 3- With change in temperature , V, chan. "| » Yee yet stability -fackib "<8, Sv & Sp “Se> Rote of change. SF collectos curmentCi)} bith wapect “to change. in -eveue Kattuscdhion currenk —C Tee) at constant Vee and B ons Leo S= loa Vee Se fp , eS a> Ble fF change. of Te with’ respect fang 9 Vee ot constant Ia kB f Sue OTe | wen 0 =m Be es be Ba conatadd 5, , |e Ke jane wl Sp» Rate ofe change. et Bat comtant To, | be Ve . ij \ e. ato PTS e . Foleo i Nag Pconsted: 4.for good Stabilily | the eal ty factocg SS, and Sp must be low \ . > coe ee Fk ig make Whe of 4empe rotu re éonsib- | we. devices . Such a1 diodes ) Pansigtos | eer — | eto semigtorg / tn Buch @ 4 so teep colle ctvs cumenk Covutank irrespective of | - | Vartation wn Too, Vge and p- Difte rent compensation 4echintguer ave — 4. Picde Comperuation . i] @. Therm idtov comperua hon Sensi eto compensation . 3. Piode compensation rechinique > Ae Nee se A diode ik comhected i a oF rn ee, | IN Revetped bias base to emitter. “the dicde and the unig be canard ee eae reese ere ; ; %& Game matedal . Hence 1 the yatio of * As temperature inemaseg Te ine reasy WMerease of verge gatuiation cunenk in the [to toemare in Tey. a ae Famaietor will be game AS temperature incowares Rp decwase : Gt %m ovens es. i Hence, 2. becomes constank ichfely mates ae this mates Te and volinge drop acwese f Va | (Semen | increases. } : \ye'So, fonoerd giar notre of Bare to om t Compensation “Techhiigue ;— 1 Sunetion decwaser, Which mateg de cw i Nec : ; {| m@e. | So, finally Ge Becomes consrant- | L I Thermigtos ie a tangducer which has 4 he gate temperature Coe ffterent-

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