EVAL1ED3321MC1 EVALAUDAMP25TO EVALIHW65R62ED REFMA5332BTLSP 1ED3321MC12NXU

2NTOBO1 BO1 S06JTOBO1 STOBO1 MA1

New Product Introduction
February 2022

EiceDRIVER™ F3 Enhanced (1ED332x) – Single-channel isolated gate driver family

with short-circuit protection

OptiMOS™ 5 MOSFET 25 V and 30 V in PQFN 2x2 package

OptiMOS™ 5 60 V Power MOSFET in SuperSO8 5x6 (SSO8) package

MERUS™ MA5332MS 2-channel analog input class D audio amplifier multichip

REF_MA5332BTLSPS reference board

EVAL_AUDAMP25 evaluation board

3 kW half bridge induction heating evaluation board with 650 V Reverse Conducting
EiceDRIVER™ F3 Enhanced (1ED332x) – Single-
channel isolated gate driver family with short-circuit
protection
The EiceDRIVERTM F3 Enhanced (1ED332x) family is an isolated gate
driver family including protection features, such as short-circuit protec-
tion (DESAT), soft-off and active Miller Clamp.

The gate driver family provides typical peak output currents of up to 8.5
A. Its short-circuit protection is suitable for both IGBTs and SiC
MOSFETs. The active Miller Clamp feature makes it ideal for fast-
switching applications with SiC MOSFETs and TRENCHSTOP™ IGBT 7
to avoid parasitic turn-on. The appealing protection feature-set increases
system safety in many applications.
Features Benefits

 For up to 2300 V IGBTs, SiC and Si MOSFETs  Tight part-to-part propagation delay matching (15 ns. max.) allows
minimum deadtime improving system efficiency and decreasing
 +6 A / -8.5 A typical sinking and sourcing peak output current
harmonic distortion
 Precise VCEsat detection (DESAT) with fault output
 UL 1577 VISO = 6.8 kV (rms) for 1 s, 5.7 kV (rms) for 1 min
 Soft turn-off after desaturation detection
 IEC 60747-17/VDE 0884-11 with VIORM = 1767 V (peak, rein-
 Active Miller Clamp forced)
 40 V absolute maximum output supply voltage  The precise threshold and timings, combined with UL 1577 certifi-
 85 ns propagation delay with 35 ns input filter cation enable superior application safety

 High common-mode transient immunity CMTI >300 kV/μs  High isolation capability, can be used in 1500 V DC solar inverter
application
 DSO-16 300 mil wide-body package with large creepage distance
(>8 mm)
Target applications
 Undervoltage lockout (UVLO) protection with hysteresis (for IGBTs
and SiC)  Industrial motor drives - compact, standard, premium, servo drives
Competitive advantage  Solar inverters, High-voltage isolated DC-DC converters

 Future-proof output current capability supporting trends towards  UPS systems

higher-power inverters and wide-bandgap devices adoption
 EV charging
 Short-circuit protection for both IGBTs and CoolSIC™. Maintains
systems to be short-circuit proof also with SiC MOSFETs  Energy storage systems
 Tight part-to-part propagation delay matching enables reducing dead  Commercial air-conditioning (CAC)
-time and therefore supports highest system-efficiency
 Commercial induction cooking
 Commercial and agricultural vehicles (CAV)
 Server and telecom SMPS
Block diagram

Product collaterals / Online support

Product family page

Product overview incl. data sheet link

OPN SP Number Package

1ED3321MC12NXUMA1 SP005433357 PG-DSO-16

1ED3322MC12NXUMA1 SP005433359 PG-DSO-16

1ED3323MC12NXUMA1 SP005433361 PG-DSO-16

EVAL1ED3321MC12NTOBO1 SP005679300
OptiMOS™ 5 MOSFET 25 V and 30 V in PQFN 2x2 package

With the new OptiMOS™ 5 best-in-class 25 V and 30 V in

PQFN 2x2 product family, Infineon is setting impressive new
standards in small form factor, on-state resistance (RDS(on))
and switching performance.

Features Benefits

 New best-in-class products  Optimized for high performance applications

 150°C junction temperature (Tj)  Optimized for highest efficiency and power density
 Industry’s lowest RDS(on) in smallest PQFN 2x2 package  Enables significant space saving
 Superior thermal resistance for a PQFN 2x2 package
 System cost reduction
 100% avalanche tested
 Very low voltage overshoot
 Smallest package for highest PCB layout routing flexibility
 Less paralleling required
 Pb-free lead plating; RoHS compliant; Halogen-free according to
IEC61249-2-21  Environmentally friendly

Target applications Competitive advantage

 Wireless charging  Best-in-class RDS(on)max in smallest 2x2 PQFN package for

maximium power density
 Charger and adapters
 System cost reduction
 Robots and drones
 High continuous current capability up to 55 A
 Industrial SMPS  Superior thermal resistance (RthJC=11 K/W)
 Server  150°C junction temperature (Tj)
 Telecom
 Consumer

Block diagram: Portable charger

Product collaterals / Online support

Product page ISK024NE2LM5

Product page ISK036N03LM5

Product overview incl. data sheet link

OPN SP Number Package

ISK024NE2LM5 SP002296752 PG-VSON-6

ISK036N03LM5 SP002296744 PG-VSON-6

OptiMOS™ 5 60 V Power MOSFET in SuperSO8 5x6
(SSO8) package

Infineon’s new best-in-class OptiMOS™ 5 60 V Power

MOSFET in SuperSO8 package (ISC010N06NM5) offers low
on-state resistance RDS(on) at 25˚C and 175˚C, and high con-
tinuous current (up to 330 A). Infineon's OptiMOS™
MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5
product portfolio and enable higher power density in addi-
tion to improved robustness, responding to the need for
lower system cost and increased performance.
Low reverse recovery charge (Qrr) improves the system reli-
ability by providing a significant reduction of voltage over-
shoot, which minimizes the need for snubber circuits, result-
ing in less engineering cost and effort.

Features Benefits

 Lowest RDS(on)  Lower conduction losses, higher power density and efficiency
 Low RthJC  Less paralleling for system cost reduction
 Low reverse recovery charge (Qrr)  Reduced overshoot
 Higher operating temperature rating to 175°C  Excellent thermal behavior

Target applications Competitive advantage

 Telecom  Market leader with best-in-class RDS(on)

 Server
 Power tools
 Low voltage drives
Product collaterals / Online support
 Class D audio, solar micro inverter, etc.
Product page

Application example

Product overview incl. data sheet link

OPN SP Number Package

ISC010N06NM5 SP005630896 PG-TSON-8

MERUS™ MA5332MS 2-channel analog input class D
audio amplifier multichip module

The MERUS™ MA5332MS multichip module offers the same

or even higher output power as monolithic alternatives with-
out a heatsink and 50 percent less footprint. This MCM (multi
-chip module) solution integrates a dual-channel PWM con-
troller, a high-voltage gate driver, and 4 low RDS(ON)
MOSFETs. It includes standard class D protection features
for reliable operation over various environmental conditions.
The MA5332MS’ 7x7 mm PG- IQFN-42 package showcases
the benefit of a small footprint, high power density, and op-
eration without a heatsink.

Features Benefits

 Integrated Infineon’s best-in-class mid voltage MOSFET with low  Enables heatsink-less solution compared to same power level
RDS(ON) monolithic approach
 100V high breakdown voltage  Enables high power SE (single-ended) design with reduced bus
 Over-current, over-temperature and under-voltage protections with capacitors and output filters from low voltage BTL approach
self-reset feature
 Simplifies Class D design and eliminates the need for external
protection circuitry

Target applications Competitive advantage

 Soundbar subwoofer  Saves system BOM

 Aftermarket car audio system  Higher power density
 Active speaker  Simplifies amplifier protection implementation

Block diagram
Product collaterals / Online support

Product page

Video

Product overview incl. data sheet link

OPN SP Number Package

MA5332MSXUMA1 SP005582717 PG-IQFN-42

REF_MA5332BTLSPS reference board

The REF_MA5332BTLSPS reference board is a one BTL

channel, 200 W/ch (4 Ω at 40 V) class D audio power ampli-
fier for home audio systems. This reference board demon-
strates how to use MA5332M IC with a single power supply
and design an optimum PCB layout using Infineon integrat-
ed Class D IC. This reference design does not require addi-
tional heatsink or fan cooling for normal operation (one-
eighth of continuous rated power). The reference design
provides all the required housekeeping power supplies for
ease of use.

Features Benefits

 Output power: 200 W x 1 channels (10 percent THD+N, 4 Ω at 40 V)  Single power supply
 Multiple protection features:  Full-bridge output
 Over-Current Protection (OCP), high-side and low-side  High audio quality
 Over-Temperature Protection (OTP)
 Low noise
 PWM modulator: Self-oscillating half-bridge topology with optional
clock synchronization  High efficiency

Target applications

 Audio

Product collaterals / Online support

Board page

User manual

Additional product information

Product overview incl. data sheet link

OPN SP Number

REFMA5332BTLSPSTOBO1 SP005576570
EVAL_AUDAMP25 evaluation board

The EVAL_AUDAMP25 MA5332 evaluation board is a two-

channel, 200 W/ch (4 Ω at ±36.5 V; with heatsink) half-
bridge class D audio power amplifier for Hi-Fi audio sys-
tems. This evaluation board demonstrates how to use
MA5332 IC, implement protection circuits, and design an
optimum PCB layout using Infineon integrated Class D IC.
This reference design does not require additional heatsink
or fan cooling for normal operation (one-eighth of continu-
ous rated power).

Features Benefits

 Output power: 200 W x 2 channels (10 percent THD+N, 4 Ω at  Split power supply
±36.5 V)
 SE/BTL/PSE output
 Multiple protection features:
 High audio quality
 Over-Current Protection (OCP), high-side and low-side
 Over-Voltage Protection (OVP)  Low noise

 Under-Voltage Protection (UVP), high-side and low-side  High efficiency

 DC Protection(DCP)
 Over-Temperature Protection (OTP)
 PWM modulator: Self-oscillating half-bridge topology with optional
clock synchronization

Target applications Product collaterals / Online support

 Audio Board page

User Manual

Safety and operational instructions

Product overview incl. data sheet link

OPN SP Number

EVALAUDAMP25TOBO1 SP005537889
3 kW half bridge induction heating evaluation board with
650 V Reverse Conducting R6 IGBT

This induction heating, half-bridge evaluation board EVAL -

HW65R62EDS06J features the new 650 V reverse-
conducting R6 family of IGBTs, specifically designed for
induction heating and resonant switching applications up
to 100 kHz. The evaluation board demonstrates the func-
tionality and key features of the R6 IGBTs in combination
with the Infineon level-shift EiceDRIVERTM ICs based on the
Infineon SOI technology.

Features Benefits

 Input voltage: 180 – 270 Vdc  Easy to measure waveforms of IGBT

 Max auxiliary supply voltage: 20 Vdc  Easy exchange or replacement of resonant coil
 Nominal output power: 3 kW  Easy evaluation of different gate driver ICs
 Features the new 650 V reverse-conducting R6 family of IGBTs  Direct access to the device for thermal measurements

Target applications Competitive advantage

 Induction cooking  The board is reflecting a typical, state-of-the-art induction cooking

system based on a half-bridge topology
 Inverterized microwaves
 This evaluation board can be used during design-in, for evaluation
and measurement of characteristics, and proof of data sheet
specifications
 Unique chance to evaluation Infineon reverse-conducting IGBTs
in combination with four different gate driver ICs (EiceDRIVER™
Block diagram: 2ED2x families)

Product collaterals / Online support

Board page

Application note

Video

Board overview incl data sheet link

OPN SP Number

EVALIHW65R62EDS06JTOBO1 SP005678248
ISK024NE2LM5 ISK036N03LM5 MA5332MSXUMA1
 EVAL1ED3321MC1 EVALAUDAMP25TO EVALIHW65R62ED REFMA5332BTLSP 1ED3321MC12NXU
2NTOBO1 BO1 S06JTOBO1 STOBO1 MA1

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