FJL6820
FJL6820
High Voltage Color Display Horizontal Deflection Output
High Collector-Base Breakdown Voltage : BVCBO = 1500V Low Saturation Voltage : VCE(sat) = 3V (Max.) For Color Monitor
TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1500 750 6 20 30 200 150 -55 ~ 150 Units V V V A A W C C
* Pulse Test: PW=300s, duty Cycle=2% Pulsed
Electrical Characteristics TC=25C unless otherwise noted
Symbol ICES ICBO IEBO BVCBO BVCEO BVEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500A, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCE=5V, IC=1A VCE=5V, IC=8.5A VCE=5V, IC=11A IC=11A, IB=2.75A IC=11A, IB=2.75A VCC=200V, IC=10A, RL=20 IB1=2.0A, IB2= - 4.0A 0.15 1500 750 6 8 6 5.5 10 8.5 3 1.5 3 0.2 V V s s Min. Typ. Max. 1 10 1 Units mA A mA V V V
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time
* Pulse Test: PW=20s, duty Cycle=1% Pulsed
Thermal Characteristics TC=25C unless otherwise noted
Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 0.625 Units C/W
2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
FJL6820
Typical Characteristics
14
IB=2.0A IB=1.8A IB=1.6A IB=1.4A IB=1.2A IB=1.0A
100
VCE = 5V
12
IC [A], COLLECTOR CURRENT
10
hFE, DC CURRENT GAIN
Ta = 125 C Ta = 25 C
0
IB=0.8A IB=0.6A IB=0.4A
10
Ta = - 25 C
IB=0.2A
2
0 0 2 4 6 8 10 12
1 0.1
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristics
Figure 2. DC Current Gain
10
10
VCE(sat) [V], SATURATION VOLTAGE
Ta = 125 C
1
VCE(sat) [V], SATURATION VOLTAGE
IC = 3 IB
IC = 5 IB
Ta = 25 C 0 Ta = - 25 C
Ta = 25 C Ta = 125 C
0.1
0
0.1
Ta = - 25 C
0.01 0.1
10
100
0.01 0.1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
16
10
14
VCE = 5V
IC[A], COLLECTOR CURRENT
12
tSTG & tF [ s], SWITCHING TIME
tSTG
IB1 = 2A, VCC = 200V IC = 10A
10
tF
125 C
0.1
25 C
0 0.0 0.2 0.4 0.6 0.8
- 25 C
1.0 1.2 0.01 0.1 1 10 100
VBE[V], BASE-EMITTER VOLTAGE
IB2 [A], REVERSE BASE CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
FJL6820
Typical Characteristics (Continued)
10 10
IB2 = - 4A, VCC = 200V IC = 10A
tSTG
IB1 = 2A, IB2 = - 4A VCC = 200V
tF & TSTG [ s], SWITCHING TIME
tSTG & tF [s], SWITCHING TIME
tSTG
tF
tF
0.1
0.1
10
10
100
IB1 [A], FORWARD BASE CURRENT
IC [A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
100
40
IC (Pulse)
t = 100ms t = 10ms t = 1ms
35
IC [A], COLLECTOR CURRENT
RB2 = 0, IB1 = 15A VCC = 30V, L = 200 H
10
IC (DC)
IC [A], COLLECTOR CURRENT
30
25
20
15
0.1
V BE(off) = - 6V
10
TC = 25 C Single Pulse
0.01 1 10 100 1000 10000
V BE(off) = - 3V
1 10 100 1000 10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Bias Safe Operating Area
Figure 10. Reverse Bias Safe Operating Area
300
250
PC [W], POWER DISSIPATION
200
150
100
50
0 0 25 50
O
75
100
125
150
175
TC [ C], CASE TEMPERATURE
Figure 11. Power Derating
2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001
FJL6820
Package Demensions
TO-264
6.00 0.20
20.00 0.20
(4.00)
(8.30)
(8.30)
(2.00)
(1.00)
(9.00)
(9.00)
(11.00)
(0.50)
20.00 0.20 2.50 0.10
1.50 0.20
(R1
(7.00)
(7.00)
4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 0.10
+0.25
(2.00)
20.00 0.50
(R 2.0
3.3 0 0
.20
.00
0)
(1.50)
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 0.10
+0.25
2.80 0.30
5.00 0.20
3.50 0.20
(0.15)
(1.50)
(2.80)
Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A1, May 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet Series
DISCLAIMER
FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC
OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START Stealth
SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic UHC UltraFET VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
2001 Fairchild Semiconductor Corporation
Rev. H2
