AO4800

30V Dual N-Channel MOSFET

General Description Product Summary

The AO4800 uses advanced trench technology to provide VDS 30V

excellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6.9A
make a compact and efficient switch and synchronous RDS(ON) (at VGS=10V) < 27m
rectifier combination for use in buck converters.
RDS(ON) (at VGS = 4.5V) < 32m
RDS(ON) (at VGS = 2.5V) < 50m

100% UIS Tested

100% Rg Tested

SOIC-8 D1 D2

Top View Bottom View

Top View

S2 1 8 D2
G2 2 D2
7
S1 3 6 D1
G1 4 5 D1 G1 G2

S1 S2

Pin1

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 12 V
Continuous Drain TA=25C 6.9
ID
Current TA=70C 5.8 A
Pulsed Drain Current C IDM 40
Avalanche Current C IAS, IAR 14 A
Avalanche energy L=0.1mH C EAS, EAR 10 mJ
TA=25C 2
PD W
Power Dissipation B TA=70C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 48 62.5 C/W
RJA
Maximum Junction-to-Ambient A D Steady-State 74 90 C/W
Maximum Junction-to-Lead Steady-State RJL 32 40 C/W

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 AO4800

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250A, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
TJ=55C 5
IGSS Gate-Body leakage current VDS=0V, VGS= 12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 0.7 1.1 1.5 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 25 A
VGS=10V, ID=6.9A 17.8 27
m
TJ=125C 28 40
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=6A 19 32 m
VGS=2.5V, ID=5A 24 50 m
gFS Forward Transconductance VDS=5V, ID=5A 33 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 630 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 75 pF
Crss Reverse Transfer Capacitance 50 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 3 4.5
SWITCHING PARAMETERS
Qg Total Gate Charge 6 7 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=6.9A 1.3 nC
Qgd Gate Drain Charge 1.8 nC
tD(on) Turn-On DelayTime 3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.2, 2.5 ns
tD(off) Turn-Off DelayTime RGEN=3 25 ns
tf Turn-Off Fall Time 4 ns
trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/s 8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s 2.6 nC
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25C.
D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4800

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 15
10V 3V
35 VDS=5V
4.5V
12
30

25 2.5V 9
ID (A)

ID(A)
20

15 6

10
VGS=2V 3 125C 25C
5

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 1.8

Normalized On-Resistance VGS=4.5V

ID=6A
1.6
25 VGS=4.5V
)
RDS(ON) (m

1.4
17
20
5
1.2 VGS=10V
ID=6.9A
2
15
10
VGS=10V
1

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

50 1.0E+01
ID=6.9A
1.0E+00
40 40
1.0E-01
)
RDS(ON) (m

125C 125C
IS (A)

25C
30 1.0E-02

1.0E-03
20
1.0E-04
25C
10 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4800

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1000

VDS=15V
ID=6.9A
4 800
Ciss

Capacitance (pF)
VGS (Volts)

3 600

2 400
Coss

1 200

Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 100.0
TA=25C
IAR (A) Peak Avalanche Current

RDS(ON) 10s
TA=100C 10.0
limited
TA=150C
ID (Amps)

100s
10.0 1.0 1ms
10ms
TA=125C 0.1 DC
TJ(Max)=150C 10s
TA=25C

0.0
1.0 0.01 0.1 1 10 100
1 10 100 1000
s)
Time in avalanche, tA (
VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note C) Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)

10000
TA=25C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

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 AO4800

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
Z JA Normalized Transient

TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RJA=90C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4800

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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