RQ3E160AD
Nch 30V 16A Middle Power MOSFET Datasheet
l Outline
HSMT8
VDSS 30V
RDS(on)(Max.) 4.5mΩ
ID ±16A
PD 2W
l Inner circuit
l Features
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package.
4) Pb-free lead plating ; RoHS compliant
l Packaging specifications
Embossed
Packing
Tape
Reel size (mm) 330
l Application Type Tape width (mm) 12
Switching Basic ordering unit (pcs) 3000
Taping code TB
Marking E160AD
l Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Value Unit
Drain - Source voltage VDSS 30 V
Continuous drain current ID*1 ±16 A
Pulsed drain current ID,pulse*2 ±64 A
Gate - Source voltage VGSS ±20 V
Avalanche energy, single pulse EAS*3 23 mJ
Avalanche current IAS*3 16 A
Power dissipation PD*4 2 W
Junction temperature Tj 150 ℃
Range of storage temperature Tstg -55 to +150 ℃
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 1/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal resistance, junction - ambient RthJA*4 - 62.5 - ℃/W
l Electrical characteristics (T a = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - Source breakdown V(BR)DSS VGS = 0V, ID = 1mA
voltage 30 - - V
Breakdown voltage ΔV(BR)DSS ID = 1mA
temperature coefficient - 20.84 - mV/℃
ΔTj referenced to 25℃
Zero gate voltage IDSS VDS = 30V, VGS = 0V
drain current - - 1 μA
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±10 μA
Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 1.0 - 2.5 V
Gate threshold voltage ΔVGS(th) ID = 1mA
temperature coefficient - -3.25 - mV/℃
ΔTj referenced to 25℃
Static drain - source VGS = 10V, ID = 16A - 3.5 4.5
RDS(on)*5 mΩ
on - state resistance VGS = 4.5V, ID = 16A - 5.0 7.0
Transconductance gfs*5 VDS = 10V, ID = 8A 7.5 - - S
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 10μH, V DD = 15V, RG = 25Ω, STARTING Tch = 25℃ Fig.3-1,3-2
*4 Mounted on a ceramic boad (30×30×0.8mm)
*5 Pulsed
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 2/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Electrical characteristics (Ta = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 2550 -
Output capacitance Coss VDS = 15V - 350 - pF
Reverse transfer capacitance Crss f = 1MHz - 290 -
Turn - on delay time td(on)*5 VDD ⋍ 15V,VGS = 10V - 9 -
Rise time tr*5 ID = 8A - 30 -
ns
Turn - off delay time td(off)*5 RL = 1.87Ω - 80 -
Fall time tf*5 RG = 10Ω - 45 -
l Gate charge characteristics (Ta = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = 10V - 51 -
Total gate charge Qg*5
VDD ⋍ 15V - 25 -
nC
Gate - Source charge Qgs*5 ID = 16A VGS = 4.5V - 8 -
Gate - Drain charge Qgd*5 - 10.5 -
l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Body diode continuous IS*1 - - 1.6
forward current
Ta = 25℃ A
Body diode ISP*2 - - 64
pulse current
Forward voltage VSD*5 VGS = 0V, IS = 1.6A - - 1.2 V
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 3/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal Fig.4 Single Pulse Maximum Power
Resistance vs. Pulse Width dissipation
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 4/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Electrical characteristic curves
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 5/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Electrical characteristic curves
Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Transconductance vs. Drain Current
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 6/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Electrical characteristic curves
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 7/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Electrical characteristic curves
Fig.14 Static Drain - Source On - State Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I) Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 8/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Electrical characteristic curves
Fig.17 Typical Capacitance vs. Drain - Fig.18 Switching Characteristics
Source Voltage
Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain
Voltage
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 9/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 AVALANCHE MEASUREMENT CIRCUIT Fig.3-2 AVALANCHE WAVEFORM
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 10/11 20140821 - Rev.001
RQ3E160AD Datasheet
l Dimensions
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 11/11 20140821 - Rev.001
