RQ3E070BN
Nch 30V 7A Middle Power MOSFET Datasheet
l Outline
HSMT8
VDSS 30V
RDS(on)(Max.) 27mΩ
ID ±7A
PD 2W
l Inner circuit
l Features
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
l Packaging specifications
Embossed
Packing Tape
Reel size (mm) 330
l Application Type Tape width (mm) 12
Switching Basic ordering unit (pcs) 3000
Taping code TB
Marking E070BN
l Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Value Unit
Drain - Source voltage VDSS 30 V
Continuous drain current ID ±7 A
Pulsed drain current ID,pulse*1 ±28 A
Gate - Source voltage VGSS ±20 V
Power dissipation PD*2 2 W
Junction temperature Tj 150 ℃
Range of storage temperature Tstg -55 to +150 ℃
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© 2014 ROHM Co., Ltd. All rights reserved. 1/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal resistance, junction - ambient RthJA*2 - 62.5 - ℃/W
l Electrical characteristics (T a = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - Source breakdown V(BR)DSS VGS = 0V, ID = 1mA
voltage 30 - - V
Breakdown voltage ΔV(BR)DSS ID = 1mA
temperature coefficient - 21 - mV/℃
ΔTj referenced to 25℃
Zero gate voltage IDSS VDS = 30V, VGS = 0V
drain current - - 1 μA
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±100 nA
Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 1.0 - 2.5 V
Gate threshold voltage ΔVGS(th) ID = 1mA
temperature coefficient - -3 - mV/℃
ΔTj referenced to 25℃
Static drain - source VGS = 10V, ID = 7A - 20 27
RDS(on)*3 mΩ
on - state resistance VGS = 4.5V, ID = 7A - 29 39
Gate input resistance RG - 3.3 - Ω
Transconductance gfs*3 VDS = 5V, ID = 7A 4 - - S
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic boad (30×30×0.8mm)
*3 Pulsed
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© 2014 ROHM Co., Ltd. All rights reserved. 2/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Electrical characteristics (Ta = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 410 -
Output capacitance Coss VDS = 15V - 50 - pF
Reverse transfer capacitance Crss f = 1MHz - 40 -
Turn - on delay time td(on)*3 VDD ⋍ 15V,VGS = 10V - 6 -
Rise time tr*3 ID = 3.5A - 8 -
ns
Turn - off delay time td(off)*3 RL = 4.29Ω - 23 -
Fall time tf*3 RG = 10Ω - 5 -
l Gate charge characteristics (Ta = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = 10V - 8.9 -
Total gate charge Qg*3
VDD ⋍ 15V - 4.6 -
nC
Gate - Source charge Qgs*3 ID = 7A VGS = 4.5V - 1.9 -
Gate - Drain charge Qgd*3 - 1.4 -
l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Body diode continuous IS - - 1.67
forward current
Ta = 25℃ A
Body diode ISP*1 - - 28
pulse current
Forward voltage VSD*3 VGS = 0V, IS = 1.67A - - 1.2 V
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© 2014 ROHM Co., Ltd. All rights reserved. 3/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal Fig.4 Single Pulse Maximum Power
Resistance vs. Pulse Width dissipation
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© 2014 ROHM Co., Ltd. All rights reserved. 4/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Electrical characteristic curves
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
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© 2014 ROHM Co., Ltd. All rights reserved. 5/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Electrical characteristic curves
Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Tranceconductance vs. Drain
Current
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© 2014 ROHM Co., Ltd. All rights reserved. 6/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Electrical characteristic curves
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
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© 2014 ROHM Co., Ltd. All rights reserved. 7/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Electrical characteristic curves
Fig.14 Static Drain - Source On - State Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I) Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
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© 2014 ROHM Co., Ltd. All rights reserved. 8/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Electrical characteristic curves
Fig.17 Typical Capacitance vs. Drain - Fig.18 Switching Characteristics
Source Voltage
Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain
Voltage
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© 2014 ROHM Co., Ltd. All rights reserved. 9/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
l Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2014 ROHM Co., Ltd. All rights reserved. 10/11 20140911 - Rev.001
RQ3E070BN Datasheet
l Dimensions
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© 2014 ROHM Co., Ltd. All rights reserved. 11/11 20140911 - Rev.001
