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MJL 21194

The SPTECH MJL21194 is a TO-3PL packaged NPN power transistor designed for high power audio output and linear applications. It has excellent gain linearity and can handle currents up to 16A continuously and 30A peak with a maximum power dissipation of 200W. Key electrical characteristics include a collector-emitter breakdown voltage of 250V minimum, saturation voltages of 1.4V and 4V at 8A and 16A respectively, and gain ratings of 25-75 and 8 at currents of 8A and 16A.

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Eren Yeger
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326 views2 pages

MJL 21194

The SPTECH MJL21194 is a TO-3PL packaged NPN power transistor designed for high power audio output and linear applications. It has excellent gain linearity and can handle currents up to 16A continuously and 30A peak with a maximum power dissipation of 200W. Key electrical characteristics include a collector-emitter breakdown voltage of 250V minimum, saturation voltages of 1.4V and 4V at 8A and 16A respectively, and gain ratings of 25-75 and 8 at currents of 8A and 16A.

Uploaded by

Eren Yeger
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SPTECH Product Specification

SPTECH NPN Power Transistors MJL21194

DESCRIPTION
·With TO-3PL package
·Complement to type MJL21193
·Excellent gain linearity

APPLICATIONS
·Designed for high power audio output,disk
head positioners and linear applications

PINNING
PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3 Emitter

ABSOLUTE MAXIMUM RATINGS(Tc=25 )


SYMBOL PARAMETER CONDITIONS MAX UNIT

VCBO Collector-base voltage Open emitter 400 V

VCEO Collector-emitter voltage Open base 250 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 16 A

ICM Collector current-peak 30 A

IB Base current 5 A

PD Total power dissipation TC=25 200 W

Tj Junction temperature -65~150

Tstg Storage temperature -65~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT

Rth j-C Thermal resistance from junction to case 0.7 /W

SPTECH website：www.superic-tech.com
SPTECH Product Specification

SPTECH NPN Power Transistors MJL21194

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=100mA ;IB=0 250 V

VCE(sat)-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.4 V

VCE(sat)-2 Collector-emitter saturation voltage IC=16A ;IB=3.2A 4.0 V

VBE(ON) Base-emitter on voltage IC=8A ; VCE=5V 2.2 V

ICEX Collector cut-off current VCE=250V; VBE(off)=1.5V 100 µA

ICEO Collector cut-off current VCE=200V; IB=0 100 µA

IEBO Emitter cut-off current VEB=5V; IC=0 100 µA

hFE-1 DC current gain IC=8A ; VCE=5V 25 75

hFE-2 DC current gain IC=16A ; VCE=5V 8

fT Transition frequency IC=1A ; VCE=10V,f=1MHz 4 MHz

COB Collector output capacitance f=1MHz;VCB=10V,IE=0 500 pF

SPTECH website：www.superic-tech.com 2

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