CD4511BMS

CMOS BCD-to-7-Segment
December 1992
Latch Decoder Drivers

Features Pinout
• High Voltage Type (20V Rating) CD4511BMS
TOP VIEW
• High Output Sourcing Capability up to 25mA
• Input Latches for BCD Code Storage
B 1 16 VDD
• Lamp Test and Blanking Capability
C 2 15 f
• 7 Segment Outputs Blanked for BCD Input Codes
LT 3 14 g
> 1001
BL 4 13 a
• 100% Tested for Quiescent Current at 20V
LE/STROBE 5 12 b
• 5V, 10V and 15V Parametric Ratings
D 6 11 c
• Maximum Input Current of 1µA at 18V Over Full Pack- A 7 10 d
age Temperature Range; 100nA at 18V and +25oC
VSS 8 9 e

Applications
• Driving Common Cathode LED Displays
• Multiplexing with Common Cathode LED Displays
• Driving Incandescent Displays Functional Diagram
• Driving Low Voltage Fluorescent Displays
LT
3
Description 13
a
7
A 12
CD4511BMS is a BCD-to-7-Segment latch decoder drivers b
constructed with CMOS logic and n-p-n bipolar transistor 1
D D 11
B L E c
output devices on a single monolithic structure. These R 7
BCD A C 10
I d SEGMENT
devices combine the low quiescent power dissipation and T O
INPUTS V OUTPUTS
2 C D 9
high noise immunity features of Intersil CMOS with n-p-n C E
H E e
R
bipolar output transistors capable of sourcing up to 25mA. R
15
6 f
This capability allows the CD4511BMS types to drive LED’s D 14
and other displays directly. g

Lamp Test (LT), Blanking (BL), and Latch Enable or Strobe 5 4

LE/STROBE BL
inputs are provided to test the display, shut off or intensity
modulate it, and store or strobe a BCD code, respectively. VSS = 8
Several different signals may be multiplexed and displayed VDD = 16
when external multiplexing circuitry is used.
These devices are similar to the type MC14511.
The CD4511BMS is supplied in these 16-lead outline
packages: 7-Segment Display
Braze Seal DIP H4W
Frit Seal DIP H2R a
f g b
Ceramic Flatpack H6W
e c
d

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. File Number 3339
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-1169
 Specifications CD4511BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V Thermal Resistance . . . . . . . . . . . . . . . . θja θjc
(Voltage Referenced to VSS Terminals) Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Maximum Package Power Dissipation (PD) at +125oC
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
Package Types D, F, K, H For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Linearity at 12mW/oC to 200mW
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for For TA = Full Package Temperature Range (All Package Types)
10s Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTE 1) SUBGROUPS TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 10 µA
2 +125oC - 1000 µA
VDD = 18V, VIN = VDD or GND 3 -55oC - 10 µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
2 +125oC -1000 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
2 +125oC - 1000 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1 +25oC 14.1 - V
2 +125oC 14.2 V
3 -55oC 14.0 V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 1 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 2.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 6.8 - mA
Output Drive Voltage LVOH5 VDD = 5V, IOH = -20mA 1 +25oC 3.4 - V
Output Drive Voltage LVOH10 VDD = 10V, IOH = -20mA 1 +25oC 8.6 - V
Output Drive Voltage LVOH15 VDD = 15V, IOH = -20mA 1 +25oC 13.7 - V
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH > VOL < V
VDD/2 VDD/2
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low VIL VDD = 5V, VOH > 3.6V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
(Note 2)
Input Voltage High VIH VDD = 5V, VOH > 3.6V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
(Note 2)
Input Voltage Low VIL VDD = 15V, VOH > 12.6V, 1, 2, 3 +25oC, +125oC, -55oC - 4 V
(Note 2) VOL < 1.5V
Input Voltage High VIH VDD = 15V, VOH > 12.6V, 1, 2, 3 +25oC, +125oC, -55oC 11 - V
(Note 2) VOL < 1.5V
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD
implemented.
2. Go/No Go test with limits applied to inputs.

7-1170
 Specifications CD4511BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTE 1, 2) SUBGROUPS TEMPERATURE MIN MAX UNITS
Propagation Delay TPHL VDD = 5V, VIN = VDD or GND 9 +25oC - 1040 ns
Data to Output
10, 11 +125oC, -55oC - 1404 ns
Propagation Delay TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 1320 ns
Data to Output
10, 11 +125oC, -55oC - 1782 ns
Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 +25oC - 310 ns
10, 11 +125oC, -55oC - 419 ns
Transition Time TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 80 ns
10, 11 +125oC, -55oC - 108 ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 5 µA
+125oC - 150 µA
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC - 10 µA
+125oC - 300 µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 10 µA
+125oC - 600 µA
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, - 50 mV
-55oC
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, - 50 mV
-55oC
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC 4.1 - V
1, 2 +125oC 4.2 - V
1, 2 -55oC 4.0 - V
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC 9.1 - V
1, 2 +125oC 9.2 - V
1, 2 -55oC 9.0 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
-55oC 0.64 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
-55oC 1.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
-55oC 4.2 - mA
Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, - 3 V
-55oC
Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, +7 - V
-55oC
Propagation Delay TPHL VDD = 10V 1, 2, 3 +25oC - 420 ns
Data to Output
VDD = 15V 1, 2, 3 +25oC - 300 ns

7-1171
 Specifications CD4511BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued)

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Propagation Delay TPLH VDD = 10V 1, 2, 3 +25oC - 520 ns
Data to Output o
VDD = 15V 1, 2, 3 +25 C - 360 ns
Propagation Delay TPHL VDD = 5V 1, 2, 3 +25oC - 700 ns
(BT) oC
VDD = 10V 1, 2, 3 +25 - 350 ns
VDD = 15V 1, 2, 3 +25oC - 250 ns
Propagation Delay TPLH VDD = 5V 1, 2, 3 +25oC - 800 ns
(BT) oC
VDD = 10V 1, 2, 3 +25 - 350 ns
VDD = 15V 1, 2, 3 +25o C - 300 ns
Propagation Delay TPHL VDD = 5V 1, 2, 3 +25oC - 500 ns
(LT) oC
VDD = 10V 1, 2, 3 +25 - 250 ns
VDD = 15V 1, 2, 3 +25oC - 170 ns
o
Propagation Delay TPLH VDD = 5V 1, 2, 3 +25 C - 300 ns
(LT)
VDD = 10V 1, 2, 3 +25o C - 150 ns
VDD = 15V 1, 2, 3 +25oC - 100 ns
Transition Time TTHL VDD = 10V 1, 2, 3 +25oC - 185 ns
oC
VDD = 15V 1, 2, 3 +25 - 160 ns
Transition Time TTLH VDD = 10V 1, 2, 3 +25oC - 60 ns
o
VDD = 15V 1, 2, 3 +25 C - 50 ns
oC
Minimum Data Setup TS VDD = 5V 1, 2, 3 +25 - 150 ns
Time
VDD = 10V 1, 2, 3 +25oC - 70 ns
oC
VDD = 15V 1, 2, 3 +25 - 40 ns
Minimum Data Hold Time TH VDD = 5V 1, 2, 3 +25oC - 0 ns
VDD = 10V 1, 2, 3 +25oC - 0 ns
oC
VDD = 15V 1, 2, 3 +25 - 0 ns
Minimum Strobe Pulse TW VDD = 5V 1, 2, 3 +25oC - 400 ns
Width
VDD = 10V 1, 2, 3 +25oC - 160 ns
VDD = 15V 1, 2, 3 +25oC - 100 ns
o
Output Drive Voltage LVOH5 VDD = 5V, IOH = -10mA 1, 2 +25 C 3.9 - V
1, 2 +125oC 3.9 - V
1, 2 -55oC 3.8 - V
VDD = 5V, IOH = -20mA 1, 2 -55oC 3.55 - V
VDD = 5V, IOH = -25mA 1, 2 +25oC 3.1 - V
1, 2 -55oC 3.4 - V
Output Drive Voltage LVOH10 VDD = 10V, IOH = -10mA 1, 2 +25oC 9.0 - V
1, 2 +125oC 9.0 - V
1, 2 -55oC 8.85 - V
VDD = 10V, IOH = -20mA 1, 2 +125oC 8.4 - V
1, 2 -55oC 8.7 - V
VDD = 10V, IOH = -25mA 1, 2 +25oC 8.3 - V
1, 2 -55oC 8.6 - V

7-1172
 Specifications CD4511BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS(Continued)

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Output Drive Voltage LVOH15 VDD = 15V, IOH = -10mA 1, 2 +25oC 14.0 - V
o
1, 2 +125 C 14.0 - V
1, 2 -55oC 13.9 - V
VDD = 15V, IOH = -20mA 1, 2 +125oC 13.5 - V
1, 2 -55oC 13.75 - V
VDD = 15V, IOH = -25mA 1, 2 +25oC 13.5 - V
oC
1, 2 -55 13.65 - V
Input Capacitance CIN Any Input 1, 2 +25o C - 7.5 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 25 µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V
Delta
P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage ∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC - ±1 V
Delta
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH > VOL < V
VDD/2 VDD/2
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x ns
TPLH +25oC
Limit
NOTES: 1. All voltages referenced to device GND. 3. See Table 2 for +25oC limit.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC

PARAMETER SYMBOL DELTA LIMIT

Supply Current - MSI-2 IDD ± 1.0µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883
CONFORMANCE GROUP METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

7-1173
 Specifications CD4511BMS

TABLE 6. APPLICABLE SUBGROUPS (Continued)

MIL-STD-883
CONFORMANCE GROUP METHOD GROUP A SUBGROUPS READ AND RECORD
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

TABLE 7. TOTAL DOSE IRRADIATION

TEST READ AND RECORD

MIL-STD-883
CONFORMANCE GROUPS METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

OSCILLATOR
FUNCTION OPEN GROUND VDD 9V ± -0.5V 50kHz 25kHz
Static Burn-In 1 9-15 1-8 16
(Note 1)
Static Burn-In 2 9-15 8 1-7, 16
(Note 1)
Dynamic Burn- 9-15 5, 8 3, 4, 16 - 1, 2, 7 6
In (Note 1)
Irradiation 9-15 8 1-7, 16
(Note 2)
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V

7-1174
 CD4511BMS

Logic Diagram
VDD

DRIVER
(BL) LOGIC
IOH
* +
P
TG
N VOH
-
VSS
OUTPUT
P DRIVERS
A
* TG a
N

P
TG b
N

P
B
* TG
N c

P
TG
N d

P
C
* TG
N e

P
TG
N f

P
D
* TG
N
g

LE/STROBE
*
VDD
*
LT

* ALL INPUTS ARE PROTECTED

BY CMOS PROTECTION NETWORK
VSS
FIGURE 1.

TRUTH TABLE

LE BI LT D C B A a b c d e f g DISPLAY

X X 0 X X X X 1 1 1 1 1 1 1

X 0 1 X X X X 0 0 0 0 0 0 0 Blank

0 1 1 0 0 0 0 1 1 1 1 1 1 0

0 1 1 0 0 0 1 0 1 1 0 0 0 0

0 1 1 0 0 1 0 1 1 0 1 1 0 1

0 1 1 0 0 1 1 1 1 1 1 0 0 1

0 1 1 0 1 0 0 0 1 1 0 0 1 1

0 1 1 0 1 0 1 1 0 1 1 0 1 1

7-1175
 CD4511BMS

TRUTH TABLE (Continued)

LE BI LT D C B A a b c d e f g DISPLAY

0 1 1 0 1 1 0 0 0 1 1 1 1 1

0 1 1 0 1 1 1 1 1 1 0 0 0 0

0 1 1 1 0 0 0 1 1 1 1 1 1 1

0 1 1 1 0 0 1 1 1 1 0 0 1 1

0 1 1 1 0 1 0 0 0 0 0 0 0 0 Blank

0 1 1 1 0 1 1 0 0 0 0 0 0 0 Blank

0 1 1 1 1 0 0 0 0 0 0 0 0 0 Blank

0 1 1 1 1 0 1 0 0 0 0 0 0 0 Blank

0 1 1 1 1 1 0 0 0 0 0 0 0 0 Blank

0 1 1 1 1 1 1 0 0 0 0 0 0 0 Blank

1 1 1 X X X X * *

X = Don’t Care
* Depends on BCD code previously applied when LE = 0

NOTE: Display is blank for all illegal input codes (BCD > 1001).

Typical Performance Characteristics

700
AMBIENT TEMPERATURE (TA) = +25oC
OUTPUT LOW (SINK) CURRENT (IOL) (mA)

PROPAGATION DELAY TIME (tPLH) (ns)

SUPPLY VOLTAGE (VDD) = 5V

600

30 GATE-TO-SOURCE VOLTAGE (VGS) = 15V

500
25
400
20
300 10V
15
10V
200 15V
10

100
5
5V
AMBIENT TEMPERATURE (TA) = +25oC

0 5 10 15 0 25 50 75 100
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
LOAD CAPACITANCE (CL) (pF)

FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT FIGURE 3. TYPICAL DATA-TO-OUTPUT, LOW-TO-HIGH-LEVEL
CHARACTERISTICS PROPAGATION DELAY TIME AS A FUNCTION OF
LOAD CAPACITANCE

7-1176
 CD4511BMS

Typical Performance Characteristics

700
AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC
PROPAGATION DELAY TIME (tPLH) (ns)

600 60

TRANSITION TIME (tTLH) (ns)

SUPPLY VOLTAGE (VDD) = 5V
500 SUPPLY VOLTAGE (VDD) = 5V 50

400 40 10V

15V
300 30
10V
200 20

15V
100 10

0 25 50 75 100 0 25 50 75 100
LOAD CAPACITANCE (CL) (pF) LOAD CAPACITANCE (CL) (pF)

FIGURE 4. TYPICAL DATA-TO-OUTPUT, HIGH-TO-LOW-LEVEL FIGURE 5. TYPICAL LOW-TO-HIGH-LEVEL TRANSITION TIME

PROPAGATION DELAY TIME AS A FUNCTION OF AS A FUNCTION OF LOAD CAPACITANCE
LOAD CAPACITANCE

AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC

OUTPUT SOURCE CURRENT (IOH) (mA)

500
SUPPLY VOLTAGE (VDD) = 5V
TRANSITION TIME (tTHL) (ns)

10V
25 SUPPLY VOLTAGE (VDD) = 15V
5V
400
20

300
10V 15

15V
200 10

5
100

0 0.5 1 1.5
0 100 200 300 400 500
SUPPLY VOLTAGE - OUTPUT DRIVE VOLTAGE (VDD - VOH) (V)
LOAD CAPACITANCE (CL) (pF)

FIGURE 6. TYPICAL HIGH-TO-LOW TRANSITION TIME AS A FIGURE 7. TYPICAL VOLTAGE DROP (VDD TO OUTPUT) vs OUT-
FUNCTION OF LOAD CAPACITANCE PUT SOURCE CURRENT AS A FUNCTION OF SUPPLY

105 8
6 AMBIENT TEMPERATURE (T ) = +25oC
DYNAMIC POWER DISSIPATION (PD) (µW)

4 A
2
104 8
6
4
2 SUPPLY VOLTS (VDD) = 15V
103 8
6
4
10V
2
102 8 10V
6 5V
4
2
101 8
6 CL = 50pF
4
2 CL = 15pF
100
2 4 68 2 4 68 2 4 68 2 4 68 2 4 68
10-2 10-1 100 101 102 103
FREQUENCY (f) (kHz)

FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION CHARACTERISTICS

7-1177
 CD4511BMS

Applications Interfacing with Various Displays

VDD
LT VDD

A
BCD B LATCH
INPUTS C 8 ISEG
D DECODER a R
LE + b R
BL VOH
- c R
TO VDD VSS
d R
VDD
e R

f R

g R
VDF
+
CD4511BMS
-

VSS LED 7-SEGMENT

DISPLAY

DUTY CYCLE = 100%

ISEG = IDIODEAVG. = 20mA AT LUMINOUS INTENSITY/SEGMENT = 250µcd
VOH - VDF
R=
ISEG

FIGURE 9. DRIVING COMMON CATHODE 7-SEGMENT LED DISPLAYS (EXAMPLE HEWLET-PACKARD 5082-7740)

LT VDD LT VDD = 5V
a a
A A
b b
B B
c c
C C
CD4511BMS
CD4511BMS

d d
D D VDD VDD
e e
LE
f f R≈
LE VDD R ≈ 400Ω
g g 400Ω
BL
1.6V
BL
AC OR DC
VDD

VSS VSS

A MEDIUM BRIGHTNESS INTENSITY DISPLAY CAN BE OBTAINED WITH

LOW VOLTAGE FLUORESCENT DISPLAYS SUCH AS THE TUNG-SOL 2 OF 7 SEGMENTS SHOWN CONNECTED
DIGIVAC S/G* SERIES
RESISTORS R FROM VDD TO EACH 7-SEGMENT DRIVER OUTPUT ARE
* Trademark Tung-Sol Division Wagner Electric Co. CHOSEN TO KEEP ALL NUMITRON SEGMENTS SLIGHTLY ON AND WARM

FIGURE 10. DRIVING LOW VOLTAGE FLOURESCENT DISPLAYS FIGURE 11. DRIVING INCANDESCENT DISPLAYS (RCA NU-
MITRON DR2000 SERIES DISPLAYS)

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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

1178
 CD4511BMS

Applications Interfacing with Various Displays (Continued)

LT VDD
R
a
A
MULTIPLEXING SCHEME SHOWING b
2 OF 7 SEGMENTS CONNECTED B ISEG
c

CD4511BMS
C
TRANSISTORS T1 - T4 (2N3053 OR 2N2102) d
HAVE IC MAX. RATING > 7 x ISEG D
e
DUTY CYCLE = 25% LE
f
VDD R
ISEG = (IDIODEAVG) x 4 g
(VOH - VDF-VCE) BL + +
R=
ISEG VSS - VOH VDF
-

+
VCE
VO1 12 2 Q0 4 T1 -
VSS
1 V02 11 3 Q1 5 T2
CD4024BMS CD4555BMS
VSS
2 VO3 9 1 Q2 6 T3
VSS
Q3 7 T4
VSS
VSS

FIGURE 12. MULTIPLEXING WITH COMMON CATHODE 7-SEGMENT LED DISPLAYS (EXAMPLE HEWLET-PACKARD 5082-7404
4 CHARACTER DISPLAY OR 4 DISCRETE MONOSANTO MAN 3 DISPLAYS)

Waveforms
20ns
tr tf VDD
VDD 90%
10% 50%
90% LE 0
DATA tSU tHOLD
50% VDD
INPUT 90%
10% DATA 50%
0 50%
INPUTS 10%
0
tTHL tTLH 20ns FOR SETUP
VDD VDD
90% FOR HOLD
OUTPUT 0
50%
OUTPUT 20ns 20ns
10% STROBE
0 90%
tPHL tPLH 50%
tr, tf = 20ns 10%
tr, tf = 20ns
tW

FIGURE 13. DYNAMIC WAVEFORMS

Chip Dimensions and Pad Layout

Dimensions in parenthesis are in millimeters and are

derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10-3 inch).

METALLIZATION: Thickness: 11kÅ − 14kÅ, AL.

PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches

7-1179