1K/2K/4K Spi Serial Cmos Eeprom Features
1K/2K/4K Spi Serial Cmos Eeprom Features
 FEATURES
                                                                                       ■ 1,000,000 program/erase cycles
 ■ 10 MHz SPI compatible
                                                                                       ■ 100 year data retention
 ■ 1.8 to 5.5 volt operation
                                                                                       ■ Self-timed write cycle
 ■ Hardware and software protection
                                                                                       ■ 8-Pin DIP/SOIC, 8-Pin TSSOP and 8-Pin MSOP
 ■ Low power CMOS technology
                                                                                       ■ 16-byte page write buffer
 ■ SPI modes (0,0 & 1,1)
                                                                                       ■ Block write protection
 ■ Commercial, industrial, automotive and extended
     temperature ranges                                                                  – Protect 1/4, 1/2 or all of EEPROM array
 DESCRIPTION
                                                                                       Chip Select, the clock input (SCK), data in (SI) and data
 The CAT25010/20/40 is a 1K/2K/4K Bit SPI Serial                                       out (SO) are required to access the device. The HOLD
 CMOS EEPROM internally organized as 128x8/256x8/                                      pin may be used to suspend any serial communication
 512x8 bits. Catalyst’s advanced CMOS Technology                                       without resetting the serial sequence. The CAT25010/
 substantially reduces device power requirements. The                                  20/40 is designed with software and hardware write
 CAT25010/20/40 features a 16-byte page write buffer.                                  protection features including Block Write protection. The
 The device operates via the SPI bus serial interface and                              device is available in 8-pin DIP, 8-pin SOIC, 8-pin MSOP
 is enabled though a Chip Select (CS). In addition to the                              and 8-pin TSSOP packages.
RELIABILITY CHARACTERISTICS
   Symbol                          Parameter                          Min.               Typ.               Max.                         Units
   NEND(3)              Endurance                                1,000,000                                                          Cycles/Byte
   TDR(3)               Data Retention                                100                                                                Years
   VZAP    (3)          ESD Susceptibility                           2000                                                                Volts
   ILTH(3)(4)           Latch-up                                      100                                                                  mA
A.C. CHARACTERISTICS
                                                     CAT250XX-1.8                      CAT250XX
                                                        1.8V-6.0V           2.5V-6.0V             4.5V-5.5V                         Test
SYMBOL PARAMETER                                       Min.       Max. Min.            Max.     Min.      Max.        UNITS Conditions
tSU                Data Setup Time                      50                  20                   20                    ns     VIH = 2.4V
tH                 Data Hold Time                       50                  20                   20                    ns     CL = 100pF
tWH                SCK High Time                       250                  75                   40                    ns     VOL = 0.8V
tWL                SCK Low Time                        250                  75                   40                    ns     VOH = 2.0v
fSCK               Clock Frequency                     DC           1       DC           5       DC         10        MHz
tLZ                HOLD to Output Low Z                            50                    50                 50         ns
tRI(1)             Input Rise Time                                  2                    2                  2          µs
tFI(1)             Input Fall Time                                  2                    2                  2          µs
tHD                HOLD Setup Time                     100                  40                   40                    ns
tCD                HOLD Hold Time                      100                  40                   40                    ns     CC
                                                                                                                               L L==100pF
                                                                                                                                     50pF
tWC(3)             Write Cycle Time                                 5                    5                  5         ms         (note 2)
tV                 Output Valid from Clock Low                    250                    75                 40         ns
tHO                Output Hold Time                      0                   0                    0                    ns
tDIS               Output Disable Time                            250                    75                 75         ns
tHZ                HOLD to Output High Z                          150                    50                 50         ns
tCS                CS High Time                        500                  100                 100                    ns
tCSS               CS Setup Time                       500                  100                 100                    ns
tCSH               CS Hold Time                        500                  100                 100                    ns
tWPS               WP Setup Time                       150                  50                   50                    ns
tWPH               WP Hold Time                        150                  50                   50                    ns
NOTE:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) AC Test Conditions:
      Input Pulse Voltages: 0.3VCC to 0.7VCC
      Input rise and fall times: ≤10ns
      Input and output reference voltages: 0.5VCC
      Output load: current source IOL max/IOH max; CL=50pF
(3) tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
      CS
               VIL
                                                                                                               tCSH
                     tCSS
               VIH
    SCK                                                tWH                  tWL
               VIL
                                   tSU                   tH
               VIH
       SI                                  VALID IN
               VIL
                                                                                       tRI
                                                                                       tFI
                                                                                  tV            tHO                         tDIS
              VOH       HI-Z                                                                                                       HI-Z
     SO
              VOL
 Note: Dashed Line= mode (1, 1) – – – – –
INSTRUCTION SET
Instruction                               Opcode                                              Operation
WREN                                      0000 0110                                           Enable Write Operations
WRDI                                      0000 0100                                           Disable Write Operations
RDSR                                      0000 0101                                           Read Status Register
WRSR                                      0000 0001                                           Write Status Register
READ                                      0000 X011(1)                                        Read Data from Memory
WRITE                                     0000 X010(1)                                        Write Data to Memory
Power-Up Timing(2)(3)
    Symbol                                  Parameter                                            Max.                                Units
       tPUR                      Power-up to Read Operation                                        1                                      ms
       tPUW                      Power-up to Write Operation                                       1                                      ms
Note:
(1) X=0 for 25010, 25020. X=A8 for 25040
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
STATUS REGISTER
             7                      6              5   4                3            2              1               0
             1                      1              1   1               BP1          BP0           WEL             RDY
The BP0 and BP1 (Block Protect) bits indicate which                                 READ Sequence
blocks are currently protected. These bits are set by the                           The part is selected by pulling CS low. The 8-bit read
user issuing the WRSR instruction. The user is allowed                              instruction is transmitted to the CAT25010/20/40, followed
to protect quarter of the memory, half of the memory or                             by the 8-bit address for CAT25010/20/40 (for the 25040,
the entire memory by setting these bits. Once protected,                            bit 3 of the read data instruction contains address A8).
the user may only read from the protected portion of the
array. These bits are non-volatile.                                                 After the correct read instruction and address are sent,
                                                                                    the data stored in the memory at the selected address is
                                                                                    shifted out on the SO pin. The data stored in the memory
                                                                                    at the next address can be read sequentially by continuing
CS
SK
SI 0 0 0 0 0 1 1 0
                                                                            HIGH IMPEDANCE
        SO
 Note: Dashed Line= mode (1, 1) – – – – –
CS
SK
SI 0 0 0 0 0 1 0 0
                                                                HIGH IMPEDANCE
    SO
Note: Dashed Line= mode (1, 1) – – – – –
CS
                0           1   2       3           4       5   6           7    8    9       10    11   12       13   14   15        16    17    18       19   20        21     22
SK
SI            0         0       0       0       0
                                                X*      0       1       1       A7   A6   A5       A4    A3       A2   A1   A0
                                                                                                                                                       DATA OUT
                                                        HIGH IMPEDANCE
SO                                                                                                                                D7       D6 D5 D4         D3       D2    D1 D0
                                                                                                                                 MSB
CS
                        0           1           2           3           4        5        6         7         8        9         10        11       12          13         14
SCK
OPCODE
SI 0 0 0 0 0 1 0 1
                                                                                                                                                DATA OUT
                                            HIGH IMPEDANCE
SO                                                                                                            7        6         5          4          3        2          1          0
                                                                                                         MSB
array because the write enable latch will not have been                                                   device is ready for the next instruction
properly set. Also, for a successful write operation the
address of the memory location(s) to be programmed                                                        Page Write
must be outside the protected address field location                                                      The CAT25010/20/40 features page write capability.
selected by the block protection level.                                                                   After the initial byte, the host may continue to write up to
                                                                                                          16 bytes of data to the CAT25010/20/40. After each
Byte Write                                                                                                byte of data received, lower order address bits are
Once the device is in a Write Enable state, the user may                                                  internally incremented by one; the high order bits of
proceed with a write sequence by setting the CS low,                                                      address will remain constant. The only restriction is that
issuing a write instruction via the SI line, followed by the                                              the X (X=16 for CAT25010/20/40) bytes must reside on
8-bit address for 25010/20/40 (for the 25040, bit 3 of the                                                the same page. If the address counter reaches the end
read data instruction contains address A8). Programming                                                   of the page and clock continues, the counter will “roll
will start after the CS is brought high. Figure 6 illustrates                                             over” to the first address of the page and overwrite any
byte write sequence.                                                                                      data that may have been written. The CAT25010/20/40
                                                                                                          is automatically returned to the write disable state at the
During an internal write cycle, all commands will be                                                      completion of the write cycle. Figure 8 illustrates the
ignored except the RDSR (Read Status Register)                                                            page write sequence.
instruction.
                                                                                                          To write to the status register, the WRSR instruction
The Status Register can be read to determine if the write                                                 should be sent. Only Bit 2 and Bit 3 of the status register
cycle is still in progress. If Bit 0 of the Status Register is                                            can be written using the WRSR instruction. Figure 7
set at 1, write cycle is in progress. If Bit 0 is set at 0, the                                           illustrates the sequence of writing to status register.
CS
                  0           1           2        3    4        5           6       7    8       13 14 15 16 17 18 19 20 21 22 23
  SK
SI 0 0 0 0 0X* 0 1 0 A7 A0 D7 D6 D5 D4 D3 D2 D1 D0
                                          HIGH IMPEDANCE
  SO
Note: Dashed Line= mode (1, 1) – – – – –
*X=0 for 25010, 25020 ; X=A8 for 25040
CS
                      0               1            2        3            4           5        6   7       8     9    10    11        12     13       14       15
  SCK
                                                                OPCODE                                                          DATA IN
   SI             0               0            0        0            0           0        0       1       7     6    5      4         3     2         1        0
                                                                                                      MSB
                                              HIGH IMPEDANCE
   SO
DESIGN CONSIDERATIONS
The CAT250140/20/40 powers up in a write disable                                                   SO is in a high impedance. If an invalid op code is
state and in a low power standby mode. A WREN                                                      received, no data will be shifted into the CAT250140/
instruction must be issued to perform any writes to the                                            20/40, and the serial output pin (SO) will remain in a
device after power up. Also,on power up CS should be                                               high impedance state until the falling edge of CS is
brought low to enter a ready state and receive an                                                  detected again.
instruction. After a successful byte/page write or status
register write, the CAT250140/20/40 goes into a write                                              When powering down, the supply should be taken down
disable mode. CS must be set high after the proper                                                 to 0V, so that the CAT250140/20/40 will be reset when
number of clock cycles to start an internal write cycle.                                           power is ramped back up. If this is not possible, then,
Access to the array during an internal write cycle is                                              following a brown-out episode, the CAT250140/20/40
ignored and programming is continued. On power up,                                                 can be reset by refreshing the contents of the Status
                                                                                                   Register (See Application Note AN10).
CS
SK
                                                                                       HIGH IMPEDANCE
      SO
Note: Dashed Line= mode (1, 1) – – – – –                      *X=0 for 25010, 25020 ; X=A8 for 25040
CS
tCD tCD
SCK
                                                          tHD
                                                                                                             tHD
   HOLD
                                                                          tHZ
                                                                                                        HIGH IMPEDANCE
       SO
                                                                                                                                     tLZ
Note: Dashed Line= mode (1, 1) – – – – –
CS
SCK
WP
WP
ORDERING INFORMATION
 Notes:
 (1) The device used in the above example is a CAT25040SI-1.8TE13 (SOIC, Industrial Temperature, 1.8 Volt to 5.5 Volt Operating
      Voltage, Tape & Reel)
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