SCT3080KL

N-channel SiC power MOSFET Datasheet

Outline
TO-247N
VDSS 1200V
RDS(on) (Typ.) 80m
ID 31A
PD 165W (1)(2)(3)

Inner circuit
(2)

Features (1) Gate

1) Low on-resistance (2) Drain
*1 (3) Source
(1)
2) Fast switching speed
3) Fast reverse recovery *1 Body Diode
(3)
4) Easy to parallel
Packaging specifications
5) Simple to drive
Packing Tube
6) Pb-free lead plating ; RoHS compliant
Reel size (mm) -
Tape width (mm) -
Application Type
Basic ordering unit (pcs) 30
・Solar inverters
Taping code C11
・DC/DC converters
Marking SCT3080KL
・Switch mode power supplies
・Induction heating
・Motor drives

Absolute maximum ratings (Ta = 25°C)

Parameter Symbol Value Unit
Drain - Source voltage VDSS 1200 V
*1
Tc = 25°C ID 31 A
Continuous drain current
*1
Tc = 100°C ID 22 A
Pulsed drain current ID,pulse *2 77 A
Gate - Source voltage (DC) VGSS 4 to +22 V
Gate-Source Surge Voltage (tsurge < 300nsec) VGSS_surge
*4
4 to +26 V
Recommended Drive Voltage VGS_op 0 / +18 V
Junction temperature Tj 175 °C
Range of storage temperature Tstg 55 to 175 °C

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© 2016 ROHM Co., Ltd. All rights reserved. 1/12 2018.04 - Rev.E
SCT3080KL Datasheet

Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.

Thermal resistance, junction - case RthJC - 0.70 0.91 C/W

Electrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Drain - Source breakdown

V(BR)DSS VGS = 0V, ID = 1mA 1200 - - V
voltage

VDS = 1200V, VGS = 0V

Zero gate voltage
IDSS Tj = 25°C - 1 10 A
drain current
Tj = 150°C - 2 -

Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA

Gate - Source leakage current IGSS VGS = 4V, VDS = 0V - - 100 nA

Gate threshold voltage VGS (th) VDS = 10V, ID = 5mA 2.7 - 5.6 V
VGS = 18V, ID = 10A
Static drain - source
RDS(on) *3 Tj = 25°C - 80 104 m
on - state resistance
Tj = 125°C - 120 -

Gate input resistance RG f = 1MHz, open drain - 12 - 

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SCT3080KL Datasheet

Electrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
*3
Transconductance gfs VDS = 10V, ID = 10A - 4.4 - S

Input capacitance Ciss VGS = 0V - 785 -

Output capacitance Coss VDS = 800V - 75 - pF

Reverse transfer capacitance Crss f = 1MHz - 35 -

Effective output capacitance, VGS = 0V

Co(er) - 74 - pF
energy related VDS = 0V to 600V
*3
Turn - on delay time td(on) VDD = 400V, ID = 10A - 15 -
*3
Rise time tr VGS = 18V/0V - 22 -
ns
*3
Turn - off delay time td(off) RL = 40 - 29 -
*3
Fall time tf RG = 0 - 24 -

VDD = 600V, ID=10A

Turn - on switching loss Eon *3 - 132 -
VGS = 18V/0V
RG = 0 L=750H J
*3 *Eon includes diode
Turn - off switching loss Eoff - 18 -
reverse recovery

Gate Charge characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
*3
Total gate charge Qg VDD = 600V - 60 -
*3
Gate - Source charge Qgs ID = 10A - 15 - nC
*3
Gate - Drain charge Qgd VGS = 18V - 25 -

Gate plateau voltage V(plateau) VDD = 600V, ID = 10A - 9.6 - V

*1 Limited only by maximum temperature allowed.

*2 PW  10s, Duty cycle  1%

*3 Pulsed

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© 2016 ROHM Co., Ltd. All rights reserved. 3/12 2018.04 - Rev.E
SCT3080KL Datasheet

Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Inverse diode continuous, *1

IS - - 31 A
forward current
Tc = 25°C
Inverse diode direct current,
ISM *2 - - 77 A
pulsed
*3
Forward voltage VSD VGS = 0V, IS = 10A - 3.2 - V
*3
Reverse recovery time trr - 17 - ns
IF =10A, VR = 600V
Reverse recovery charge Qrr *3 - 50 - nC
di/dt = 1100A/s
*3
Peak reverse recovery current Irrm - 6 - A

*4 Example of acceptable Vgs waveform

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© 2016 ROHM Co., Ltd. All rights reserved. 4/12 2018.04 - Rev.E
SCT3080KL Datasheet

Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

200 1000
Operation in this area is limited by RDS(ON)
180

160
Power Dissipation : PD [W]

100 PW = 100µs
140

Drain Current : ID [A]

120

100 10
PW = 1ms
80
PW = 10ms
60
1
40 PW = 100ms

20 Ta = 25ºC
Single Pulse
0 0.1
0 50 100 150 200 0.1 1 10 100 1000 10000

Case Temperature : TC [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width
Transient Thermal Resistance : Rth [K/W]

0.1

0.01

Ta = 25ºC
Single Pulse

0.001
0.0001 0.001 0.01 0.1 1 10

Pulse Width : PW [s]

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© 2016 ROHM Co., Ltd. All rights reserved. 5/12 2018.04 - Rev.E
SCT3080KL Datasheet

Electrical characteristic curves

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

30 15
20V Ta = 25ºC 20V
18V Pulsed 18V
14V
Ta = 25ºC
16V 16V

Drain Current : ID [A]

Pulsed
14V 12V
Drain Current : ID [A]

20 10
12V

10V

10 5
10V

VGS= 8V
VGS= 8V

0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.6 Tj = 150ºC Typical Output Fig.7 Tj = 150ºC Typical Output

Characteristics(I) Characteristics(II)
30 15
20V 14V
20V
18V
12V 10V
18V 14V 16V
16V
10V
20 12V 10
Drain Current : ID [A]

Drain Current : ID [A]

VGS= 8V

10 5
VGS= 8V

Ta = 150ºC Ta = 150ºC
Pulsed Pulsed
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

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SCT3080KL Datasheet

Electrical characteristic curves

Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II)

100 30
VDS = 10V VDS = 10V
Pulsed Pulsed

10

Drain Current : ID [A]

Drain Current : ID [A]

20

Ta= 150ºC
1
Ta= 75ºC Ta= 150ºC
Ta= 25ºC Ta= 75ºC
Ta= 25ºC 10 Ta= 25ºC
Ta= 25ºC
0.1

0.01 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20

Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

Fig.10 Gate Threshold Voltage Fig.11 Transconductance vs. Drain Current

vs. Junction Temperature
6 10
VDS = 10V VDS = 10V
ID = 5mA Pulsed
5
Gate Threshold Voltage : V GS(th) [V]

Transconductance : gfs [S]

3 1

Ta = 150ºC
2 Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
1

0 0.1
-50 0 50 100 150 200 0.1 1 10

Junction Temperature : Tj [ºC] Drain Current : ID [A]

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© 2016 ROHM Co., Ltd. All rights reserved. 7/12 2018.04 - Rev.E
SCT3080KL Datasheet

Electrical characteristic curves

Fig.12 Static Drain - Source On - State Fig.13 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature
0.32 0.32
Ta = 25ºC VGS = 18V
Static Drain - Source On-State Resistance

Static Drain - Source On-State Resistance

0.28 Pulsed 0.28 Pulsed

0.24 0.24

0.2 0.2
: RDS(on) []

: RDS(on) []
0.16 0.16
ID = 21A
0.12 0.12 ID = 21A
ID = 10A
0.08 0.08
ID = 10A
0.04 0.04

0 0
6 8 10 12 14 16 18 20 22 -50 0 50 100 150 200

Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State

Resistance vs. Drain Current
1
Static Drain - Source On-State Resistance
: RDS(on) []

0.1

Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
VGS = 18V Ta = 25ºC
Pulsed Ta = 25ºC
0.01
1 10 100

Drain Current : ID [A]

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SCT3080KL Datasheet

Electrical characteristic curves

Fig.15 Typical Capacitance Fig.16 Coss Stored Energy

vs. Drain - Source Voltage
10000 25
Ta = 25ºC

Coss Stored Energy : EOSS [J]

Ciss 20
1000
Capacitance : C [pF]

15
Coss
100
10
Crss
10
Ta = 25ºC 5
f = 1MHz
VGS = 0V
1 0
0.1 1 10 100 1000 0 100 200 300 400 500 600 700 800

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics

10000 20
Ta = 25ºC Ta = 25ºC
VDD = 400V VDD = 600V
tf VGS = 18V ID = 10A
Gate - Source Voltage : VGS [V]

1000 RG = 0 15 Pulsed
Pulsed
Switching Time : t [ns]

100 10
td(off)
tr

10 td(on) 5

1 0
0.1 1 10 100 0 10 20 30 40 50 60 70

Drain Current : ID [A] Total Gate Charge : Qg [nC]

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SCT3080KL Datasheet

Electrical characteristic curves

Fig.19 Typical Switching Loss Fig.20 Typical Switching Loss

vs. Drain - Source Voltage vs. Drain Current
300 1200
270 Ta = 25ºC Ta = 25ºC
ID=10A 1000 VDD=600V
240 VGS = 18V/0V VGS = 18V/0V

Switching Energy : E [J]

RG=0 RG=0
Switching Energy : E [J]

210 L=750H
L=750H 800
180 Eon

150 600

120
400 Eon
90

60
Eoff 200
30 Eoff

0 0
200 400 600 800 1000 0 5 10 15 20 25 30

Drain - Source Voltage : VDS [V] Drain Current : ID [A]

Fig.21 Typical Switching Loss

vs. External Gate Resistance
1200

Ta = 25ºC
1000 VDD=600V
ID=10A
VGS = 18V/0V
Switching Energy : E [J]

800 L=750H

600

400 Eon

200

Eoff
0
0 5 10 15 20 25 30

External Gate Resistance : RG []

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SCT3080KL Datasheet

Electrical characteristic curves

Fig.22 Inverse Diode Forward Current Fig.23 Reverse Recovery Time

vs. Source - Drain Voltage vs.Inverse Diode Forward Current
100 1000
Ta = 25ºC
Inverse Diode Forward Current : IS [A]

Reverse Recovery Time : trr [ns]

di / dt = 1100A / us
VR = 600V
10 VGS = 0V VGS = 0V
Pulsed Pulsed

1 100

Ta = 150ºC
Ta = 75ºC
0.1 Ta = 25ºC
Ta = 25ºC

0.01 10
0 1 2 3 4 5 6 7 8 1 10 100

Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A]

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SCT3080KL Datasheet

Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Eon = ID×VDS Eoff = ID×VDS

Same type
device as Irr Vsurge
D.U.T. VDS

D.U.T.

ID
ID

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

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 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.

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the recommended usage conditions and specifications contained herein.

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document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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 Datasheet

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Part Number SCT3080KL

Package TO-247N
Unit Quantity 450
Minimum Package Quantity 30
Packing Type Tube
Constitution Materials List inquiry
RoHS Yes