DRV8243-Q1 Automotive H-Bridge Driver With Integrated Current Sense and Diagnostics
DRV8243-Q1 Automotive H-Bridge Driver With Integrated Current Sense and Diagnostics
1 Features 3 Description
• AEC-Q100 qualified for automotive applications: The DRV824x-Q1 family of devices is a fully
– Temperature grade 1: –40°C to +125°C, TA integrated H-bridge driver intended for a wide
• Functional Safety-Capable range of automotive applications. The device can
– Documentation available to aid functional safety be configured as a single full-bridge driver or as
system design two independent half-bridge drivers. Designed in a
• 4.5-V to 35-V (40-V abs. max) operating range BiCMOS high power process technology node, this
• VQFN-HR package: RON_LS + RON_HS: 84 mΩ monolithic family of devices in a power package
• HVSSOP package: RON_LS + RON_HS: 98 mΩ offer excellent power handling and thermal capability
• IOUT Max = 12 A while providing compact package size, ease of layout,
• PWM frequency operation up to 25 KHz with EMI control, accurate current sense, robustness, and
automatic dead time assertion diagnostic capability. This family also has identical
• Configurable slew rate and spread spectrum pin function with scalable RON (current capability) to
clocking for low electromagnetic interference (EMI) support different loads.
• Integrated current sense (eliminates shunt resistor) The devices integrate a N-channel H-bridge, charge
• Proportional load current output on IPROPI pin pump regulator, high-side current sensing and
• Configurable current regulation regulation, current proportional output, and protection
• Protection and diagnostic features with circuitry. A low-power sleep mode is provided to
configurable fault reaction (latched or retry) achieve low quiescent current. The devices offer
– Load diagnostics in both the off-state and on- voltage monitoring and load diagnostics as well
state to detect open load and short circuit as protection features against over current and
– Voltage monitoring on supply (VM) over temperature. Fault conditions are indicated on
– Over current protection nFAULT pin. The devices are available in three
– Over temperature protection variants - hardwired interface: HW (H) and two SPI
– Fault indication on nFAULT pin interface variants: SPI(P) and SPI(S), with SPI (P)
• Supports 3.3-V, 5-V logic inputs for externally supplied logic supply and SPI (S) for
• Low sleep current - 1μA typical at 25°C internally generated logic supply. The SPI interface
• 3 variants - HW (H), SPI (S) or SPI (P) variants offer more flexibility in device configuration
• Configurable control modes: and fault observability.
– Single full bridge using PWM or PH/EN mode
Device Information(1)
– Two half-bridges using Independent mode
PART NUMBER PACKAGE BODY SIZE (nominal)
• Device family comparison table
DRV8243-Q1 VQFN-HR (14) 3 mm X 4.5 mm
2 Applications DRV8243-Q1(2) HVSSOP (28) 3 mm X 7.3 mm
• Automotive brushed DC motors, Solenoids
(1) For all available packages, see the orderable addendum at
• Door modules , mirror modules, and seat modules the end of the data sheet
• Body control module (BCM) (2) Device available for preview only.
• E-Shifter
4.5 - 35 V
• Gas engine systems
• On board charger nSLEEP DRV824X-Q1
Driver Control
IOs
nFAULT
SPI (SPI variant) Full Bridge
Controller
Driver
CONFIG pins
(HW variant) Diagnoscs
IPROPI
Current Sense
ADC
Current Regula on
Built-in Protecon
Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV8243-Q1
SLVSG23A – DECEMBER 2021 – REVISED JANUARY 2022 www.ti.com
Table of Contents
1 Features............................................................................1 8.3 Feature Description...................................................33
2 Applications..................................................................... 1 8.4 Device Functional States.......................................... 46
3 Description.......................................................................1 8.5 Programming - SPI Variant Only...............................49
4 Revision History.............................................................. 2 8.6 Register Map - SPI Variant Only............................... 53
5 Device Comparison......................................................... 3 9 Application and Implementation.................................. 60
6 Pin Configuration and Functions...................................6 9.1 Application Information............................................. 60
6.1 HW Variant..................................................................6 9.2 Typical Application.................................................... 61
6.2 SPI Variant.................................................................. 8 10 Power Supply Recommendations..............................65
7 Specifications................................................................ 11 10.1 Bulk Capacitance Sizing......................................... 65
7.1 Absolute Maximum Ratings...................................... 11 11 Layout........................................................................... 66
7.2 ESD Ratings..............................................................11 11.1 Layout Guidelines................................................... 66
7.3 Recommended Operating Conditions.......................12 11.2 Layout Example...................................................... 66
7.4 Thermal Information..................................................12 12 Device and Documentation Support..........................67
7.5 Electrical Characteristics...........................................12 12.1 Documentation Support.......................................... 67
7.6 SPI Timing Requirements......................................... 19 12.2 Receiving Notification of Documentation Updates..67
7.7 Switching Waveforms................................................21 12.3 Community Resources............................................67
7.8 Typical Characteristics.............................................. 27 12.4 Trademarks............................................................. 67
8 Detailed Description......................................................29 13 Mechanical, Packaging, and Orderable
8.1 Overview................................................................... 29 Information.................................................................... 67
8.2 Functional Block Diagram......................................... 30 13.1 Tape and Reel Information......................................71
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
5 Device Comparison
Table 5-1 summarizes the RON and package differences between devices in the DRV824X-Q1 family.
Table 5-1. Device Comparison
PART NUMBER(2) (LS + HS) RON IOUT MAX PACKAGE BODY SIZE (nominal) Variants
DRV8243-Q1 84 mΩ 12 A VQFN-HR (14) 3 mm X 4.5 mm HW (H), SPI (S)
DRV8243-Q1(3) 98 mΩ 12 A HVSSOP (28) 3 mm X 7.3 mm HW (H), SPI (S), SPI (P)
DRV8244-Q1 47 mΩ 21 A VQFN-HR (16) 3 mm X 6 mm HW (H), SPI (S)(1)
DRV8244-Q1 60 mΩ 21 A HVSSOP (28) 3 mm X 7.3 mm HW (H), SPI (S), SPI (P)
DRV8245-Q1 32 mΩ 32 A VQFN-HR (16) 3.5 mm X 5.5 mm HW (H)(1), SPI (S)
DRV8245-Q1 40 mΩ 32 A HTSSOP (28) 4.4 mm X 9.7 mm HW (H), SPI (S), SPI (P)
Table 5-2 summarizes the feature differences between the SPI and HW interface variants in the DRV824X-
Q1 family. In general, the SPI variant offers more configurability, bridge control options, diagnostic feedback,
redundant driver shutoff, improved Pin FMEA and additional features.
In addition, the SPI variant has two options - SPI (S) variant and SPI (P) variant. The SPI (P) variant supports
an external, low voltage 5 V supply to the device through the VDD pin for the device logic, whereas in the SPI
(S) variant, this supply is internally derived from the VM pin. With this external logic supply, the SPI (P) variant
avoids device brown out (reset of device) during VM under voltage transients.
Table 5-2. SPI Variant vs HW Variant Comparison
FUNCTION HW (H) Variant SPI (S) Variant SPI (P) Variant
Individual pin "and/or" register bit with pin status indication (Refer
Bridge control Pin only
Register Pin control)
Sleep function Available through nSLEEP pin Not available
External logic supply to the device Not supported Not supported Supported through VDD pin
Reset pulse on nSLEEP
Clear fault command SPI CLR_FAULT command
pin
Slew rate 6 levels 8 levels
Fixed at the highest
Over current protection (OCP) 3 choices for thresholds, 4 choices for filter time
setting
5 levels with disable &
ITRIP regulation 7 levels with disable & indication, with programmable TOFF time
fixed TOFF time
Individual fault reaction configuration Not supported, either all
Supported
between retry or latched behavior latched or all retry
Detailed fault logging and device status Not supported, nFAULT
Supported, nFAULT pin monitoring optional
feedback pin monitoring necessary
VM over voltage Fixed 4 threshold choices
On-state (Active) diagnostics Not supported Supported for high-side loads
Spread spectrum clocking (SSC) Not supported Supported
Additional driver states in PWM mode Not supported Supported
Hi-Z for individual half-bridge in
Not supported Supported (SPI register only)
Independent mode
Note
There are some functional improvements as well as parametric corrections between the pre-
production samples and final production devices. These differences are summarized in the feature
changes table and errata table. The sample types can be differentiated visually by their package
symbolization. Pre-production samples are pre-fixed with a "P" on the package symbolization.
Additionally, for the SPI variant, it is possible to electrically differentiate between the samples by
reading the DEVICE_ID register byte (refer to Table 5-5).
Table 5-3 summarizes the feature changes between the pre-production samples and final production devices.
Table 5-3. Feature Changes Between Pre-Production and Production Samples
Feature Pre-Production Samples Final Product
Parallel mode removed. Use the DRV814X equivalent
Parallel Mode Parallel mode available
device for this.
DRV824X: SR = ~[1.6 12* 18* 23 28 33 38 43] V/usec DRV824X: SR = ~[1.2 4* 6.7* 11.4 17 22 32 41] V/usec
Slew Rate HW only 6 choices only for high-side recirculation for high-side recirculation
*Additional settings in SPI variant only *Additional settings in SPI variant only
OCP limit in DRV8243 Set at 9 A min Increased to 12 A
VTRIP = [DIS 2.97 2.64 2.31 1.98 1.65* 1.41* 1.18] V
ITRIP regulation levels VTRIP = [DIS 2.97 2.64 2.31 1.98 1.65] V
*Additional settings in SPI only
DRVOFF_SEL, EN_IN1_SEL, PH_IN2_SEL
When SPI_IN is unlocked, the input pins, DRVOFF,
introduced to configure the logical combination
SPI variants only - Reg / EN_IN1 and PH_IN2, become don’t care and the
(AND/OR) of each of the three input pins (DRVOFF,
Pin control output is controlled by their equivalent register bits
EN/IN1, PH/IN2) with their register bit counterparts,
only.
when SPI_IN is unlocked. (Refer Register Pin control)
[IN1 IN2] = [H H] => HiZ, [L L] => Brake. This
PWM truth table [IN1 IN2] = [L L] => HiZ, [H H] => Brake eliminates risk for direction reversal for a short to GND
or Open in PWM mode.
Changes allow for efficient diagnostic monitoring, in
addition to support extended configurability
1. STATUS2 byte added for DRVOFF_STAT and
ACTIVE bit indication
SPI variants only - 2. OLP_CMP moved to STATUS2 with a redundant
As listed in the register map section
Register map expansion ACTIVE bit replacing OLP_CMP in the STATUS1
3. CONFIG4 byte added to accommodate
configurability for OCP control and output control
through input pins & their equivalent register bits
1. SPI variant - Feature enabled by default 1. SPI variant - Feature disabled by default
Spread spectrum clocking 2. HW variant - Feature always enabled 2. HW variant - Feature always disabled
Only shorter lengths are rejected with SPI_ERR All other lengths are rejected with SPI_ERR
SR 1 28 ITRIP
DIAG 2 27 MODE
PH/IN2 3 26 nFAULT
EN/IN1 4 25 IPROPI
DRVOFF 5 24 nSLEEP
Thermal Pad
VM 6 23 VM
VM 7 22 VM
VM 8 21 VM
OUT1 9 20 OUT2
OUT1 10 19 OUT2
OUT1 11 18 OUT2
GND 12 17 GND
GND 13 16 GND
GND 14 15 GND
(1) I = input, O = output, I/O = input/output, G = ground, P = power, OD = open-drain output, PP = push-pull output
14 MODE
MODE
DIAG
DIAG
13 ITRIP
ITRIP
12 SR
SR
11
14
13
12
11
VM 4 VM VM 4 VM
(1) I = input, O = output, I/O = input/output, G = ground, P = power, OD = open-drain output, PP = push-pull output
Thermal Pad
VM 6 23 VM VM 6 23 VM
VM 7 22 VM VM 7 22 VM
VM 8 21 VM VM 8 21 VM
(1) I = input, O = output, I/O = input/output, G = ground, P = power, OD = open-drain output, PP = push-pull output
nSCS
SCLK
nSCS
SCLK
SDO
SDO
SDI
SDI
11
12
13
14
14
13
12
11
VM 4 VM VM 4 VM
(1) I = input, O = output, I/O = input/output, G = ground, P = power, OD = open-drain output, PP = push-pull output
7 Specifications
7.1 Absolute Maximum Ratings
Over operating temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Power supply pin voltage VM –0.3 40 V
Power supply transient voltage ramp VM 2 V/µs
Output pin voltage OUT1, OUT2 -0.9 VVM + 0.9 V
Output pin current OUT1, OUT2 Internally limited(2) A
Driver disable pin voltage DRVOFF –0.3 40 V
Logic I/O voltage EN/IN1, PH/EN2, nFAULT –0.3 5.75 V
HW variant - Configuration pins voltage MODE, ITRIP, SR, DIAG –0.3 5.75 V
Analog feedback pin voltage IPROPI –0.3 5.75 V
Sleep pin voltage (Not applicable for SPI (P)
nSLEEP –0.3 40 V
variant)
SPI I/O voltage - SPI variant SDI, SDO, nSCS, SCLK –0.3 5.75 V
SPI (P) variant - Logic supply VDD -0.3 5.75 V
SPI (P) variant - Logic supply transient voltage
VDD 5 V/µs
ramp
Ambient temperature, TA –40 125 °C
Junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) Limited by the over current and over temperature protection functions of the device
Human body model (HBM), per AEC Q100-002(1) VM, OUT1, OUT2, GND ±4000
HBM ESD Classification Level 2 All other pins ±2000
Electrostatic
V(ESD) V
discharge
Charged device model (CDM), per AEC Q100-011 Corner pins ±750
CDM ESD Classification Level C4B Other pins ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(1) The over current protection function does not support direct output (OUT1, OUT2) shorts less than 1 μH above 28 V.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
VIL Input logic low voltage DRVOFF, EN/IN1, PH/IN2 pins 0.7 V
VIH Input logic high voltage DRVOFF, EN/IN1, PH/IN2 pins 1.5 V
VIHYS Input hysteresis DRVOFF, EN/IN1, PH/IN2 pins 100 mV
Internal pull-down resistance on nSLEEP
RPD_nSLEEP Measured at min VIL level 100 400 KΩ
to GND
Internal pull-up resistance to VDD
RPU Measured at min VIH level 200 550 KΩ
(reverse current blocked) on DRVOFF
Internal pull-down resistance to GND on
RPD Measured at max VIL level 200 500 KΩ
EN/IN1 and PH/IN2
Sink current to GND on nFAULT pin
InFAULT_PD VnFAULT = 0.3 V 5 mA
when asserted low
SR = 3'b011 or LVL3 7 14 KΩ
OUT resistance to GND in SLEEP or
RHi-Z
STANDBY state, VOUTx = VVM = 13.5 V SR = 3'b100 or LVL4 5 10.5 KΩ
SR = 3'b000 or LVL2 1 µs
tDEAD_LSOFF Dead time during output voltage rise All SRs 0.9 µs
SRHSOFF Output voltage fall time, 90% - 10% SR = 3'b100 or LVL4 19 V/µs
SR = 3'b101 or LVL1 24 V/µs
SR = 3'b110 or LVL6 34 V/µs
SR = 3'b111 or LVL5 43 V/µs
Propagation time during output voltage
tPD_HSOFF All SRs 0.25 µs
fall
tDEAD_HSOFF Dead time during output voltage fall All SRs 0.2 µs
Current regulation blanking time after
tBLANK OUT slewing for current sense output to All SRs 3.4 µs
settle (Valid for only for LS recirculation)
tOCP Over current protection deglitch time TOCP_SEL = 2'b01 (SPI only) 2.2 3 4.1 µs
Over current protection deglitch time TOCP_SEL = 2'b10 (SPI only) 1.1 1.5 2.3 µs
Over current protection deglitch time TOCP_SEL = 2'b11 (SPI only) 0.15 0.2 0.4 µs
(1) Based on thermal simulations using 40 mm x 40 mm x 1.6 mm 4 layer PCB – 2 oz Cu on top and bottom layers, 1 oz Cu on internal
planes with 0.3 mm thermal via drill diameter, 0.025 mm Cu plating, 1 minimum mm via pitch.
(2) Estimated transient current capability at 85 °C ambient temperature for junction temperature rise up to 150°C
(3) Only conduction losses (I2R) considered
(4) Switching loss roughly estimated by the following equation:
PSW = VVM x ILoad x fPWM x VVM/SR, where VVM = 13.5 V, fPWM = 20 KHz, SR = 23 V/µs (1)
(1) SPI (S) variant: SDO delay times are valid only with SDO external load of 5 pF. With a 20 pF load on SDO, there is an additional
delay on SDO, which results in a 25% increase in SCLK minimum time, limiting the SCLK to a maximum of 8 MHz. There is NO such
limitation for the SPI (P) variant.
nSCS
tSCLK
SCLK
tSCLKH tSCLKL
SDI DON’T
X CARE MSB LSB X DON’T CARE
tSU_SDI tH_SDI
tDIS_SDO
SDO HI-Z
Z MSB LSB Z HI-Z
tEN_SDO
Write Command
executed by device
SDI capture point
1, 2 3 4, 5, 6 7 8, 1
1 2 3 4 5 6 7 8 1
Isense OK
tDEAD_LSOFF tDEAD_LSON
VM + VD(FET BODY DIODE)
VM
OUT1
90% ~SRHSON tPD_LSON ~SRHSOFF 90%
Accuracy not Accuracy not
applicable applicable
OUT2 GND
tPD_LSOFF
EN/IN1
PH/IN2
E.g. Full bridge in PH/EN mode, OUT1 is held high, while OUT2 is switching
Figure 7-2. Output Switching Transients for a H-Bridge with High-Side Recirculation
1, 2 3 4, 5, 6 7 8, 1
1 2 3 4 5 6 7 8 1
Isense NOT OK
tDEAD_LSOFF tDEAD_LSON
VM + VD(FET BODY DIODE)
VM
90% ~SRHSON tPD_LSON ~SRHSOFF 90%
Accuracy not Accuracy not
applicable applicable
10% 10%
OUT1 GND
tPD_LSOFF
“fPWM” @ duty cycle “1-D”
IN1
Figure 7-3. Output Switching Transients for a Half-Bridge with High-Side Recirculation
1, 2 3 4, 5, 6 7 8, 1
1 2 3 4 5 6 7 8 1
GND
GND - VD(FET BODY DIODE)
tDEAD_HSOFF tDEAD_HSON
tPD_HSON
IN1
Figure 7-4. Output Switching Transients for a half-bridge with Low-Side Recirculation
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tWAKEUP tRESET
tREADY
nSLEEP
tCOM
nFAULT
nSLEEP RESET
pulse ACK
t2
t1
t0
t3
t5
t4
Figure 7-5. Wake-up from SLEEP State to STANDBY State Transition for HW Variant
tREADY
VM
VVMUV_HYST
VVMUV
VMPOR_RISE
VMPOR_FALL
Internal
nPOR tRESET
nSLEEP=
1'b1
tCOM
nFAULT
nSLEEP RESET
pulse ACK
t1
t0
t2
t4
t5
t3
t4
t2
t1
t0
t3
t5
Figure 7-7. Wake-up from SLEEP State to STANDBY State Transition for SPI (S) Variant
Hand shake between controller and device during a wake-up transient as follows:
• t0: Controller - nSLEEP asserted high to initiate device wake-up
• t1: Device internal state - Wake-up command registered by device (end of Sleep state)
• t2: Device – nFAULT asserted low to acknowledge wake-up and indicate device ready for communication
• t3: Device internal state - Initialization complete
• t4 (Any time after t2): Controller – Issue CLR_FLT command through SPI to acknowledge device wake-up
• t5: Device - nFAULT de-asserted as an acknowledgement of nSLEEP reset pulse. Device in STANDBY state
tREADY
VM
CLR_FLT
VVMUV_HYST cmd
VVMUV
VMPOR_RISE
VMPOR_FALL
Internal
nPOR
nSLEEP=
1'b1 tCOM
nFAULT
CLR_FLT
cmd ACK
t1
t0
t2
t3
t5
t4
Figure 7-8. Power-up to STANDBY State Transition for SPI (S) Variant
tREADY
VDD CLR_FLT
cmd
VDDPOR_RISE
VDDPOR_FALL
Internal
nPOR
tCOM
nFAULT
CLR_FLT
cmd ACK
t1
t0
t2
t4
t3
t5
Figure 7-9. Power-up to STANDBY State Transition for SPI (P) Variant
tCLEAR
nFAULT
IOCP tRETRY
tRETRY
I(VM) ILOAD
IVMQ
t4
t3
t6
t5
t1
t2
Figure 7-10. Fault reaction with RETRY setting (shown for OCP occurrence on high-side when OUT is
shorted to ground)
tOCP tOCP
IOCP
I(VM) ILOAD
IVMQ
t4
t3
t6
t5
t1
t2
66 3250
LS1 0.1A
63 3200 0.2A
LS2
60 HS1 3150 0.8A
HS2 4.3A
57 3100
FET RON [m]
54
AIPROPI [A/A]
3050
51 3000
48
2950
45
2900
42
2850
39
2800
36
2750
33 -40 -20 0 20 40 60 80 100 120 140 160
-40 -20 0 20 40 60 80 100 120 140 160 Temperature [C]
Temperature [C]
Figure 7-13. AIPROPI Gain vs Temperature at VVM =
Figure 7-12. RHS_ON & RLS_ON for VQFN-HR(16) vs
13.5 V
Temperature at VVM = 13.5 V
20.5
19.5
18.5
LS OCP Threshold [A]
17.5 OCP_SEL = 0
OCP_SEL = 2
16.5 OCP_SEL = 1
15.5
14.5
13.5
12.5
11.5
-40 -20 0 20 40 60 80 100 120 140 160
Temperature [C]
Figure 7-14. LS OCP Threshold vs Temperature at Figure 7-15. HS OCP Threshold vs Temperature at
VVM = 13.5 V VVM = 13.5 V
4
3.75
3.5
3.25
Standby current [mA]
3
VM 5V
2.75 VM 13.5V
VM 25V
2.5 VM 35V
2.25
2
1.75
1.5
1.25
-40 -20 0 20 40 60 80 100 120 140 160
Temperature [C]
Figure 7-16. Current on VM in STANDBY state vs Figure 7-17. Current on VM in SLEEP state vs
Temperature Temperature
100 100
SR = 3'b000 SR = 3'b000
90 SR = 3'b001 90 SR = 3'b001
SR = 3'b010 SR = 3'b010
Measured OUT duty cycle [%]
80 80
SR = 3'b011 SR = 3'b011
70 SR = 3'b100 70 SR = 3'b100
SR = 3'b101 SR = 3'b101
60 SR = 3'b110 60 SR = 3'b110
50 SR = 3'b111 50 SR = 3'b111
40 40
30 30
20 20
10 10
0 0
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
Input Duty Cycle [%] on EN/IN1 pin at 5 KHz PWM Input Duty Cycle [%] on EN/IN1 pin at 20 KHz PWM
Figure 7-18. Measured Duty Cycle vs Input Duty Figure 7-19. Measured Duty Cycle vs Input Duty
Cycle at PWM frequency of 5 KHz at VVM = 13.5 V Cycle at PWM frequency of 20 KHz at VVM = 13.5 V
for HS recirculation for HS recirculation
8 Detailed Description
8.1 Overview
The DRV824x-Q1 family of devices are brushed DC motor drivers that operate from 4.5 to 35-V supporting a
wide range of output load currents for various types of motors and loads. The devices integrate an H-bridge
output power stage that can be operated in different control modes set by the MODE function. This allows for
driving a single bidirectional brushed DC motor or two unidirectional brushed DC motors. The devices integrate
a charge pump regulator to support efficient high-side N-channel MOSFETs with 100% duty cycle operation.
The devices operate from a single power supply input (VM) which can be directly connected to a battery or DC
voltage supply. The devices also provide a low power mode to minimize current draw during system inactivity.
The devices are available in two interface variants -
1. HW variant - Hardwired interface variant is available for easy device configuration. Due to the limited number
of available pins in the device, this variant offers fewer configuration and fault reporting capability compared
to the SPI variant.
2. SPI variant - A standard 4-wire serial peripheral interface (SPI) with daisy chain capability allows flexible
device configuration and detailed fault reporting to an external controller. The feature differences of the SPI
and HW variants can be found in the device comparison section. The SPI interface is available in two device
variant choices, as stated below:
a. SPI (S) variant - The power supply for the digital block is provided by an internal LDO regulator sourced
from VM supply. The nSLEEP pin is a high impedance input pin.
b. SPI (P) variant - This allows for an external supply input to the digital block of the device through a VDD
pin. The nSLEEP pin is replaced by this VDD supply pin. This prevents device reset (brown out) during a
VM under voltage condition.
The DRV824x family of devices provide a load current sense output using current mirrors on the high-side
power MOSFETs. The IPROPI pin sources a small current that is proportional to the current in the high-side
MOSFETs (current sourced out of the OUTx pin). This current can be converted to a proportional voltage using
an external resistor (RIPROPI). Additionally, the devices also support a fixed off-time PWM chopping scheme for
limiting current to the load. The current regulation level can be configured through the ITRIP function.
A variety of protection features and diagnostic functions are integrated into the device. These include supply
voltage monitors (VMOV & VMUV), , off-state (Passive) diagnostics (OLP), on-state (Active) diagnostics (OLA) -
SPI variant only, overcurrent protection (OCP) for each power FET and over-temperature shutdown (TSD). Fault
conditions are indicated on the nFAULT pin. The SPI variant has additional communication protection features
such as frame errors and lock features for configuration register bits and driver control bits.
VM VM
PSM Gate Driver
VCP VVCP ISNS1
HS LOAD
0.1 μF Charge
Pump
VDD HS
Internal OUT1
GND LDO & Bias VDD
LS LOAD
Supply
Monitors LS
VDD GND
Oscillator
DRVOFF Thermal Shut Down (TSD)
FB LOAD
Over Current Protection (OCP)
Digital Core
nSLEEP Off-state Diagnostics (OLP)
Digital IOs VM
EN/IN1 Gate Driver
VVCP ISNS2
HS LOAD
PH/IN2
HS
OUT2
VDD
LS LOAD
MODE
LS
ITRIP GND
Impedance
SR Estimator RnFAULT
nFAULT
DIAG
ISNS1 IPROPI
ISNS2
RIPROPI
High Side load to VM Low Side load to GND Full Bridge load
(Independent mode) (Independent mode) (PH/EN or PWM mode)
VM VM
PSM Gate Driver
VCP VVCP ISNS1
HS LOAD
0.1 μF
Charge
Pump
VDD HS
Internal OUT1
GND LDO & Bias VDD
LS LOAD
Supply
Monitors LS
VDD GND
Oscillator
DRVOFF
FB LOAD
Thermal Shut Down (TSD)
Over Current Protection (OCP)
Digital Core
nSLEEP Load Diagnostics (OLP & OLA)
VM
EN/IN1 Gate Driver
ISNS2
HS LOAD
VVCP
PH/IN2
HS
VDD OUT2
VDD
Digital IOs
LS LOAD
nSCS
LS
GND
SDI RnFAULT
nFAULT
SCLK
ISNS1 IPROPI
SDO
ISNS2
RIPROPI
High Side load to VM Low Side load to GND Full Bridge load
(Independent mode) (Independent mode) (PH/EN or PWM mode)
VM VM
PSM Gate Driver
VCP VVCP ISNS1
HS LOAD
0.1 μF
Charge
Pump
VDD HS
Internal OUT1
GND LDO & Bias VDD
LS LOAD
Supply
Monitors LS
VDD GND
Oscillator
DRVOFF
FB LOAD
Thermal Shut Down (TSD)
Over Current Protection (OCP)
Digital Core
nSLEEP Load Diagnostics (OLP & OLA)
VM
EN/IN1 Gate Driver
ISNS2
HS LOAD
VVCP
PH/IN2
HS
VDD OUT2
VDD
Digital IOs
LS LOAD
nSCS
LS
GND
SDI RnFAULT
nFAULT
SCLK
ISNS1 IPROPI
SDO
ISNS2
RIPROPI
In the HW variant, MODE pin is latched during device initialization following power-up or wake-up from sleep.
Update during operation is blocked.
In the SPI variant of the device, the mode setting can be changed anytime the SPI communication is available by
writing to the S_MODE bits. This change is immediately reflected.
The inputs can accept static or pulse-width modulated (PWM) voltage signals for either 100% or PWM drive
modes. The device input pins can be powered before VM is applied. By default, the nSLEEP and DRVOFF
pins have an internal pull-down and pull-up resistor respectively, to ensure the outputs are Hi-Z if no inputs are
present. Both the EN/IN1 and PH/IN2 pins also have internal pull down resistors. The sections below show the
truth table for each control mode.
The device automatically generates the optimal dead-time needed during transitioning between the high-side
and low-side FET on the switching half-bridge. This timing is based on internal FET gate-source voltage
feedback. No external timing is required. This scheme ensures minimum dead time, while guaranteeing no
shoot-through current.
Note
1. The SPI variant also provides additional control through the SPI_IN register bits. Refer to -
Register - Pin control.
2. For the SPI (P) variant, ignore the nSLEEP column in the control table as there is no nSLEEP pin.
Internally, nSLEEP = 1, always. The control table is valid when VDD > VDDPOR level.
For the SPI variant, by setting the PWM_EXTEND bit in the CONFIG2 register, there are additional Hi-Z states
that are possible, when a forward ([EN/IN1 PH/IN2] = [1 0]) or reverse ([EN/IN1 PH/IN2] = [0 1]) command is
followed by a Hi-Z command ([EN/IN1 PH/IN2] = [1 1]). In this condition of Hi-Z (coasting), only the half-bridge
involved with the PWM is Hi-Z, while the HS FET on the other half-bridge is kept ON. The determination on
which half-bridge to Hi-Z is made based on the previous cycle. This is summarized in Table 8-6.
Table 8-6. PWM EXTEND table (PWM_EXTEND bit = 1'b1)
PREVIOUS STATE CURRENT STATE
Device State Transition
OUT1 OUT2 OUT1 OUT2 IPROPI
Hi-Z Hi-Z Hi-Z Hi-Z No current Remains in STANDBY, no change
H H Hi-Z Hi-Z No current ACTIVE to STANDBY
L H Hi-Z H ISNS2 ACTIVE to STANDBY
H L H Hi-Z ISNS1 ACTIVE to STANDBY
Note
For the pre-production samples, the truth table is modified as shown in Table 8-7:
With this change, as an example, the PWM cycle for a forward → brake (HS recirculation) → forward, inputs will
be as follows:
• Pre-production samples: [EN/IN1 PH/IN2] = [1 0] → [1 1] → [1 0]
• Final product: [EN/IN1 PH/IN2] = [1 0] → [0 0] → [1 0]
8.3.2.3 Independent mode
In this mode, the two half-bridges are configured to be used as two independent half-bridges. The Table 8-8
shows the logic table for bridge control. For load illustration, refer the Load Summary section.
Table 8-8. Control table - Independent mode
nSLEEP DRVOFF EN/IN1 PH/IN2 OUT1 OUT2 IPROPI Device State
0 X X X Hi-Z Hi-Z No current SLEEP
1 1 0 0 Hi-Z Hi-Z No current STANDBY
1 1 1 0 No current STANDBY
1 1 0 1 Refer Off-state diagnostics table No current STANDBY
1 1 1 1 No current STANDBY
1 0 0 0 L L No current ACTIVE
1 0 0 1 L H(2) ISNS2(1) ACTIVE
1 0 1 0 H(2) L ISNS1(1) ACTIVE
1 0 1 1 H(2) H(2) ISNS1 + ISNS2(1) ACTIVE
For the SPI variant, it is possible to have independent Hi-Z control of both half-bridges through equivalent bits,
S_DRVOFF & S_DRVOFF2 in the SPI_IN register, when the SPI_IN register has been unlocked. Table 8-9
shows the logic table for bridge control using the pin & register combined inputs. Refer to - Register - Pin control
for details on the combined inputs shown in Table 8-9.
Table 8-9. Control table - Independent mode for SPI variant, when SPI_IN is unlocked
DRVOFF1 DRVOFF2 EN_IN1 PH_IN2
nSLEEP OUT1 OUT2 IPROPI Device State
combined combined combined combined
0 X X X X Hi-Z Hi-Z No current SLEEP
1 1 1 0 0 Hi-Z Hi-Z No current STANDBY
1 1 1 1 0 No current STANDBY
1 1 1 0 1 Refer Off-state diagnostics table No current STANDBY
1 1 1 1 1 No current STANDBY
1 1 0 X 0 Hi-Z L No current ACTIVE
1 1 0 X 1 Hi-Z H(2) ISNS2(1) ACTIVE
1 0 1 0 X L Hi-Z No current ACTIVE
1 0 1 1 X H(2) Hi-Z ISNS1(1) ACTIVE
1 0 0 0 0 L L No current ACTIVE
1 0 0 0 1 L H(2) ISNS2(1) ACTIVE
1 0 0 1 0 H(2) L ISNS1(1) ACTIVE
ISNS1 +
1 0 0 1 1 H(2) H(2) ACTIVE
ISNS2(1)
Pin only control DRVOFF_SEL = 1’b1 DRVOFF active S_DRVOFF = 1'b1 Only DRVOFF pin function is available
Note
This logical combination is NOT supported in the pre-production samples. In this case, when the
SPI_IN register is unlocked, the output is controlled from the equivalent register bits and the input
pins are ignored. In other words, if SPI_IN unlocked, xxx_combined = S_xxx register bits, else
xxx_combined = Input pin.
Note
The SPI variant also offers an optional spread spectrum clocking (SSC) feature that spreads the
internal oscillator frequency +/- 12% around its mean with a period triangular function of ~1.3 MHz to
reduce emissions at higher frequencies.
In the HW variant, the SR pin is latched during device initialization following power-up or wake-up from sleep.
Update during operation is blocked. Also there is no spread spectrum clocking (SSC) feature.
In the SPI variant, the slew rate setting can be changed at any time when SPI communication is available by
writing to the S_SR bits. This change is immediately reflected.
Note
For the pre-production samples, the SR settings are as shown in Table 8-12 the table below. Also, in
the HW variant, SSC feature is always enabled.
RLVL1OF6 3'b000 23 23 8
RLVL3OF6 3'b010 33 33 8
RLVL4OF6 3'b011 38 38 8
RLVL5OF6 3'b100 43 43 8
RLVL6OF6 3'101 28 28 8
8.3.3.2 IPROPI
The device integrates a current sensing feature with a proportional analog current output on the IPROPI pin that
can be used for load current regulation. This eliminates the need of an external sense resistor or sense circuitry
reducing system size, cost, and complexity.
The device senses the load current by using a shunt-less high-side current mirror topology. This way the device
can only sense an uni-directional high-side current from VM → OUTx → Load through the high-side FET when
it is fully turned ON (linear mode). The IPROPI pin outputs an analog current proportional to this sensed current
scaled by AIPROPI as follows:
IIPROPI = (IHS1 + IHS2) / AIPROPI
The IPROPI pin must be connected to an external resistor (RIPROPI) to ground in order to generate a proportional
voltage VIPROPI. This allows for the load current to be measured as a voltage-drop across the RIPROPI resistor
with an analog to digital converter (ADC). The RIPROPI resistor can be sized based on the expected load current
in the application so that the full range of the controller ADC is utilized.
The current expressed on IPROPI is the sum of the currents flowing out of the OUTx pins from VM. This implies
that:
• In full-bridge operation using PWM or PH/EN mode, the current expressed on IPROPI pin is always from one
of the half-bridges that is sourcing the current from VM to the load.
• In independent mode, the current expressed on IPROPI pin could be from either half-bridges or both of them.
It is not possible to observe only one half-bridge current independently.
8.3.3.3 ITRIP Regulation
The device offers an optional internal load current regulation feature using fixed TOFF time method. This is done
by comparing the voltage on the IPROPI pin against a reference voltage determined by ITRIP setting. TOFF time
is fixed at 30 µsec for HW variant, while it is configurable between or 20 to 50 µsec for the SPI variant using
TOFF_SEL bits in the CONFIG3 register.
The ITRIP regulation, when enabled, comes into action only when the HS FET is enabled and current sensing is
possible. In this scenario, when the voltage on the IPROPI pin exceeds the reference voltage set by the ITRIP
setting, the internal current regulation loop forces the following action:
• In PH/EN or PWM mode, OUT1 = H, OUT2 = H (high-side recirculation) for the fixed TOFF time
– Cycle skipping: Due to minimum duty cycle limitations (especially at low slew rate settings and high VM),
load current will contiue to increase even with ITRIP regulation. In order to prevent this current walk away,
a cycle skipping scheme is implemented, where, if IOUT sensed is still greater than ITRIP at the end of
TOFF time, then the recirculation time is extended by an additional TOFF period. This recirculation time
addition will continue till IOUT sensed is less than ITRIP at the end of the TOFF period.
• In Independent mode, If OUTx = H, then toggle OUTx = L for the fixed TOFF time, else no action on OUTx
Note
The user inputs always takes precedence over the internal control. That means that if the inputs
change during the TOFF time, the remainder of the TOFF time is ignored and the outputs will follow
the inputs as commanded.
ITRIP_CMP
ITRIP Impedance Estimator V(ITRIP) OUTx
(HW variant) DAC
RITRIP
ITRIP regulaon ac ve
ITRIP
IOUT
VOUT1
VOUT2
EN/IN1
tOFF tOFF tOFF
PH/IN2
E.g. PH/EN mode
Figure 8-5. Fixed TOFF ITRIP Current Regulation
In Independent mode, since ITRIP regulation is based on summation of the two half-bridge currents on IPROPI
pin, it is not possible to have completely independent current regulation for the two half-bridges simultaneously.
The ITRIP comparator output (ITRIP_CMP) is ignored during output slewing to avoid false triggering of the
comparator output due to current spikes from the load capacitance. Additionally, in the event of transition from
low-side recirculation, an additional blanking time tBLANK is needed for the sense loop to stabilize before the
ITRIP comparator output is valid.
ITRIP is a 6-level setting for the HW variant. The SPI variant offers two more settings. This is summarized in the
table below:
In the HW variant of the device, the ITRIP pin changes are transparent and changes are reflected immediately.
In the SPI variant of the device, the ITRIP setting can be changed at any time when SPI communication is
available by writing to the S_ITRIP bits. This change is immediately reflected in the device behavior.
SPI variant only - If the ITRIP regulation levels are reached, the ITRIP_CMP bit in the STATUS1 register is set.
There is no nFAULT pin indication. This bit can be cleared with a CLR_FLT command.
Note
For pre-production samples, the ITRIP settings are as shown in the table below.
8.3.3.4 DIAG
The DIAG is a pin (HW variant) or register (SPI variant) setting that is used in both ACTIVE and STANDBY
operation of the device, as follows:
• STANDBY state
– In PH/EN or PWM modes: Enable or disable Off-state diagnostics (OLP).
– Enable or disable Off-state diagnostics (OLP), as well as select the OLP combinations when enabled.
Refer to the tables in the Off-state diagnostics (OLP) section for details on this.
• ACTIVE state
– Mask ITRIP regulation function if the load type is indicated as high-side load.
– SPI variant only - Mask active open load detection (OLA) if the load type is indicated as low-side. load
– HW variant only - Configure fault reaction between retry and latch settings
8.3.3.4.1 HW variant
For the HW variant, the DIAG pin is a 6-level setting. Depending on the mode, its configurations are
summarized in the table below.
Table 8-15. DIAG table for the HW variant, PH/EN or PWM mode
STANDBY state ACTIVE state
DIAG pin
Off-state diagnostics Fault reaction
(1) Refer to the tables in the Off-state diagnostics (OLP) section for combination details
Note
HW variant only - Option to disable off-state diagnostics for a high-side load use case is not
supported. In this case, setting DRVOFF pin high and IN pin low is only way to disable off-state
diagnostics.
In the HW variant, the DIAG pin is latched during device initialization following power-up or wake-up from sleep.
Update during operation is blocked.
8.3.3.4.2 SPI variant
For the SPI variant, S_DIAG is a 2-bit setting in the CONFIG2 register. Depending on the mode, its
configurations are summarized in the table below.
Table 8-17. DIAG table for the SPI variant, PH/EN or PWM mode
STANDBY state ACTIVE state
S_DIAG bits
Off-state diagnostics On-state diagnostics
Table 8-18. DIAG table for the SPI variant, Independent mode
STANDBY state ACTIVE state
S_DIAG bits
Off-state diagnostics Load Configuration On-state diagnostics IPROPI / ITRIP
2'b00 Disabled Low-side load Disabled Available
2'b01 Enabled(1) Low-side load Disabled Available
2'b10 Disabled High-side load Available Disabled
2'b11 Enabled(1) High-side load Available Disabled
(1) Refer to the tables in the Off-state diagnostics (OLP) section for combination details
In the SPI variant of the device, the settings can be changed anytime when SPI communication is available by
writing to the S_DIAG bits. This change is immediately reflected.
8.3.4 Protection and Diagnostics
The driver is protected against over-current and over-temperature events to ensure device robustness.
Additionally, the device also offers load monitoring (on-state and off-state), over/ under voltage monitoring on
VM pin to signal any unexpected voltage conditions. Fault signaling is done through a low-side open drain
nFAULT pin which gets pulled to GND by InFAULT_PD current on detection of a fault condition. Transition to SLEEP
state automatically de-asserts nFAULT.
Note
In the SPI variant, nFAULT pin logic level is the inverted copy of the FAULT bit in the FAULT
SUMMARY register. Only exception is when off-state diagnostics are enabled and SPI_IN register
is locked (Refer OLP section) .
For the SPI variant, whenever nFAULT is asserted low, the device logs the fault into the FAULT SUMMARY and
STATUS registers. These registers can be cleared only by
• CLR FLT command or
• SLEEP command through the nSLEEP pin
It is possible to get all the useful diagnostic information for periodic software monitoring in a single 16 bit SPI
frame by:
• Reading the STATUS1 register during ACTIVE state
• Reading the STATUS2 register during STANDBY state
All the diagnosable fault events can be uniquely identified by reading the STATUS registers.
8.3.4.1 Over Current Protection (OCP)
• Device state: ACTIVE
• Mechanism & thresholds: An analog current limit circuit on each MOSFET limits the peak current out of the
device even in hard short circuit events. If the output current exceeds the overcurrent threshold, IOCP, for
longer than tOCP, then an over current fault is detected.
• Action:
– nFAULT pin is asserted low
– Reaction is based on mode selection:
• PH/EN or PWM mode - Both OUTx is Hi-Z
• Independent mode - The affected half-bridge OUTx is Hi-Z
– For a short to GND fault (over current detected on the high-side FET), the IPROPI pin continues to be
pulled up to VIPROPI_LIM even if the FET has been disabled. For the HW variant, this helps differentiate a
short to GND fault during ACTIVE state from other fault types, as the IPROPI pin is pulled high while the
nFAULT pin is asserted low.
• Reaction configurable between latch setting and retry setting based on tRETRY and tCLEAR
• User can add a small 6.3V capacitor in the range of 10 nF to 100 nF on the IPROPI pin to avoid a race
condition with ITRIP regulation in case of a load short condition when ITRIP regulation is enabled.
– In case of a load short where there is enough inductance in the short, ITRIP regulation could trigger ahead
of the OCP detection, resulting in the device missing the OCP detection. To ensure that OCP detection
wins this race condition, a small capacitor (10 nF - 100 nF) on the IPROPI pin is recommended. This
capacitance slows down the ITRIP regulation loop enough to allow the OCP detection circuit to work as
intended.
The SPI variant offers configurable IOCP levels and tOCP filter times. Refer CONFIG4 register for these settings.
8.3.4.2 Over Temperature Protection (TSD)
• Device state: STANDBY, ACTIVE
• Mechanism & thresholds: The device has several temperature sensors spread around the die. If any of the
sensors detect an over temperature event, set by TTSD for a time greater than tTSD, then an over temperature
fault is detected.
• Action:
– nFAULT pin is asserted low
– Both OUTx is Hi-Z
– IPROPI pin is Hi-Z
• Reaction configurable between latch setting and retry setting based on THYS and tCLEAR_TSD
Note
It is NOT possible to detect a load short with this diagnostic. However, the user can deduce this
logically if an over current fault (OCP) occurs during ACTIVE operation, but OLP diagnotics do not
report any fault in the STANDBY state. Occurrence of both OCP in the ACTIVE state and OLP in the
STANDBY state would imply a terminal short (short on OUT node).
VM
ROLP_PU ROLP_PU
D1 D1
OUT1 OUT2
Filter Filter
ROLP_PD
ROLP_PD RHIZ D2 D2 RHIZ
GND
OLP_CMP
Output on nFAULT pin / register VOLP_REFH REF Voltage proporonal
VOLP_REFL to Internal 5V
The OLP combinations and truth table for a no fault scenario vs. fault scenario for a full-bridge load in PH/EN or
PWM modes is shown in Table 8-19.
Table 8-19. Off-State Diagnostics Table - PH/EN or PWM Mode (full-bridge)
User Inputs OLP Set-Up OLP CMP Output
Output GND
nSLEEP DRVOFF EN/IN1 PH/IN2 OUT1 OUT2 CMP REF Normal Open VM Short
selected Short
The OLP combinations and truth table for a no fault scenario vs. fault scenario for a low-side load in Independent
mode is shown in Table 8-20.
Table 8-20. Off-State Diagnostics Table for Low-Side Load - Independent Mode
User Inputs OLP Set-Up OLP_CMP Output
LVL2, VOLP_REF
2'b01 1 1 0 1 Hi-Z ROLP_PU OUT2 L H H
LVL6 H
LVL3, VOLP_REF
2'b11 1 1 0 1 Hi-Z ROLP_PD OUT2 L L H
LVL4 L
The OLP combinations and truth table for a no fault scenario vs. fault scenario for a high-side load in
Independent mode is shown in Table 8-21.
Table 8-21. Off-State Diagnostics Table for High-Side Load - Independent Mode
User Inputs OLP Set-Up OLP_CMP Output
LVL2, VOLP_REF
2'b01 1 1 0 1 Hi-Z ROLP_PU OUT2 H H L
LVL6 H
LVL3, VOLP_REF
2'b11 1 1 0 1 Hi-Z ROLP_PD OUT2 H L L
LVL4 L
Note
For the pre-production samples, it is NOT possible to differentiate between an open fault and a load
short in the Independent mode.
• Mechanism and threshold: On-state diagnostics (OLA) can detect an open load detection in the ACTIVE state
during high-side recirculation. This includes high-side load connected directly to VM or through a high-side
FET on the other half-bridge. During a PWM switching transition, the inductive load current re-circulates into
VM through the HS body diode when the LS FET is turned OFF. The device looks for a voltage spike on
OUTx above VM during the brief dead time, before the HS FET is turned ON. To observe the voltage spike,
this load current needs to be higher than the pull down current (IPD_OLA) on the output asserted by the FET
driver. Absence of this voltage spike for "3" consecutive re-circulation switching cycles indicates a loss of load
inductance or increase in load resistance and is detected as an OLA fault.
• Action:
– nFAULT pin is asserted low
– Output - normal function maintained
– IPROPI pin - normal function maintained
• Reaction configurable between latch setting and retry setting. In retry setting, OLA fault is automatically
cleared with the detection of "3" consecutive voltage spikes during re-circulation switching cycles.
This monitoring is optional and can be disabled.
Note
OLA is not supported for low-side loads (low-side recirculation).
VM
OLA_VREF OUTx_OLA_CMP
D1
OUTx
IPD_OLA D2
GND
Figure 8-7. On-State Diagnostics
(1) If the device is waiting for an OCP event to be confirmed (waiting for tOCP) when any of events with lower priority than OCP occur, then
the device may delay servicing the other events up to a maximum time of tOCP to enable detection of the OCP event.
(2) Priority is "don't care" in this case as this fault event does not cause a change in OUTx
SLEEP
nFAULT = H, No communicaon
1
2 2 2
ACTIVE
INIT2 STANDBY Protec on Enabled
6
INIT1 nFAULT = L nFAULT = H nFAULT = fault
3 4 5
nFAULT = H Communicaon Communicaon signaling
enabled available 7 Communicaon
available
Note
For pre-production samples, [IN1/EN IN2/PH] = [0 0], if PWM mode
• From here on, the device is ready to drive the bridge based on the truth tables for the specific mode
configured.
Refer to the wake-up transients waveforms for the illustration.
8.4.4 ACTIVE State
The device is fully functional in this state with the drivers controlled by other inputs as described in prior sections.
All protection features are fully functional with fault signaling on nFAULT pin. SPI communication is available.The
device can transition into this state only from the STANDBY state.
8.4.5 nSLEEP Reset Pulse (HW Variant Only)
This is a special communication signal from the controller to the device through the nSLEEP pin available only
for the HW variant. This is used to:
• Acknowledge the nFAULT asserted during the SLEEP/ Power up transition to STANDBY state
• Clear a latched fault when the fault reaction is configured to the LATCHED setting, without forcing the device
into SLEEP or affecting any of the other functions (Equivalent to the CLR_FAULT command in the SPI
variant)
This pulse on nSLEEP must be greater than the nSLEEP deglitch time of tRESET time, but shorter than tSLEEP
time, as shown in case # 3, in Table 8-23 below.
Table 8-23. nSLEEP Timing (HW Variant Only)
Command Interpretation
Case # Window Start Time Window End Time
Clear Fault Sleep
1 0 tRESET min No No
tSLEEP max
tSLEEP min
tRESET max
tRESET min
Case 1
nSLEEP pulses
Case 2
Case 3
Case 4
Case 5
nSCS
A1 D1
SDI
SDO
S1 R1
The SDO output data word is 2 bytes long and consists of the following format:
• Status byte (first byte)
Note
For the pre-production samples, B8 in the above SDO format is OLA bit (not SPI_ERR as shown).
DRV8x DRV8x
SCLK SCLK
Master Controller SDI Master Controller SDI
SPI SPI
SDO Communication SDO Communication
CS1 nSCS CS nSCS
MCLK MCLK
SPI MO SPI MO
Communication Communication
MI DRV8x MI DRV8x
SCLK SCLK
CS2
SDI SDI
SPI SPI
SDO Communication SDO Communication
nSCS nSCS
Figure 8-11. SPI Operation Without Daisy Chain Figure 8-12. SPI Operation With Daisy Chain
M-nSCS
M-SCLK
M-SDI
nSCS
HDR1 HDR2 A3 A2 A1 D3 D2 D1
SDI1
SDO1
S1 HDR1 HDR2 A3 A2 R1 D3 D2
SDI2
SDO2
S2 S1 HDR1 HDR2 A3 R2 R1 D3
SDI3
SDO3
S3 S2 S1 HDR1 HDR2 R3 R2 R1
The SDI sent by the controller in this case would be in the following format (see SDI1 in Figure 8-13 ):
• 2 bytes of header (HDR1, HDR2)
• "n" bytes of command byte starting with furthest peripheral in the chain (for this example, this is A3, A2, A1)
• "n" bytes of data byte starting with furthest peripheral in the chain (for this example, this is D3, D2, D1)
• Total of 2 x "n" + 2 bytes
While the data is being transmitted through the chain, the controller receives it in the following format (see SDO3
in Figure 8-13):
• 3 bytes of status byte starting with furthest peripheral in the chain (for this example, this is S3, S2, S1)
• 2 bytes of header that were transmitted before (HDR1, HDR2)
• 3 bytes of report byte starting with furthest peripheral in the chain (for this example, this is R3, R2, R1)
The Header bytes are special bytes asserted at the beginning of a daisy chain SPI communication. Header
bytes must start with 1 and 0 for the two leading bits.
The first header byte (HDR1) contains information of the total number of peripheral devices in the daisy chain.
N5 through N0 are 6 bits dedicated to show the number of device in the chain as shown in Figure 8-14. Up to
63 devices can be connected in series per daisy chain connection. Number of peripheral = 0 is not permitted and
will result in a SPI_ERR flag.
The second header byte (HDR2) contains a global CLR FAULT command that will clear the fault registers of
all the devices on the rising edge of the chip select (nSCS) signal. The 5 trailing bits of the HDR2 register are
marked as SPARE (don’t care bits). These can be used by the MCU to determine integrity of the daisy chain
connection.
1 0 N5 N4 N3 N2 N1 N0
HDR1
Don’t Care
1 = Global CLR_FAULT
0 = Don’t Care
In addition, the device recognizes bytes that start with 1 and 1 for the two leading bits as a "pass" byte. These
"pass" bytes are NOT processed by the device, but they are simply transmitted out on SDO in the following byte.
When data passes through a device, it determines the position of itself in the chain by counting the number of
Status bytes it receives following by the first Header byte. For example, in this 3 device configuration, device 2 in
the chain will receive two status bytes before receiving the two header bytes.
From the two status bytes it knows that its position is second in the chain, and from HDR2 byte it knows how
many devices are connected in the chain. That way it only loads the relevant address and data byte in its buffer
and bypasses the other bits. This protocol allows for faster communication without adding latency to the system
for up to 63 devices in the chain.
The command, data, status and report bytes remain the same as described in the standard frame format.
Note
While the device allows register writes at any time SPI communication is available, it is recommended
to exercise caution while updating registers in the ACTIVE state while the load is being driven. This
is especially important for settings such as S_MODE and S_DIAG which control the critical device
configuration. In order to prevent accidental register writes, the device offers a locking mechanism
through the REG_LOCK bits in the COMMAND register to lock the contents of all configurable
registers. Best practice would be to write all the configurable registers during initialization and then
lock these settings. Run-time register writes for output control are handled by the SPI_IN register,
which offers its own separate locking mechanism through the SPI_IN_LOCK bits.
Type (2)
Addr
Name Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
DEVICE_ID DEV_ID[5] DEV_ID[4] DEV_ID[3] DEV_ID[2] DEV_ID[1] DEV_ID[0] REV_ID[1] REV_ID[0] R 00h
FAULT_SUMMARY SPI_ERR(3) POR FAULT VMOV VMUV OCP TSD OLA (3) R 01h
STATUS1 OLA1 OLA2 ITRIP_CMP ACTIVE OCP_H1 OCP_L1 OCP_H2 OCP_L2 R 02h
STATUS2 DRVOFF_STAT N/A(4) N/A(4) ACTIVE N/A(4) N/A(4) N/A(4) OLP_CMP R 03h
SPI_IN_LOCK[0]
COMMAND CLR_FLT N/A(4) N/A(4) SPI_IN_LOCK[1] (1) N/A(4) REG_LOCK[1] REG_LOCK[0] (1) R/W 08h
SPI_IN N/A(4) N/A(4) N/A(4) N/A(4) S_DRVOFF (1) S_DRVOFF2 (1) S_EN_IN1 S_PH_IN2 R/W 09h
CONFIG1 EN_OLA VMOV_SEL[1] VMOV_SEL[0] SSC_DIS(1) OCP_RETRY TSD_RETRY VMOV_RETRY OLA_RETRY R/W 0Ah
CONFIG2 PWM_EXTEND S_DIAG[1] S_DIAG[0] N/A(4) N/A(4) S_ITRIP[2] S_ITRIP[1] S_ITRIP[0] R/W 0Bh
CONFIG3 TOFF[1] TOFF[0] (1) N/A(4) S_SR[2] S_SR[1] S_SR[0] S_MODE[1] S_MODE[0] R/W 0Ch
CONFIG4 TOCP_SEL[1] TOCP_SEL[0] N/A(4) OCP_SEL[1] OCP_SEL[0] DRVOFF_SEL(1) EN_IN1_SEL PH_IN2_SEL R/W 0Dh
Note
For the pre-production samples, the register map has the following differences:
10b = VM > 18 V
10b = 40 µsec
11b = 50 µsec
2 DRVOFF_SEL R/W 1b 0b = OR
1b = AND
1 EN_IN1_SEL R/W 0b 0b = OR
1b = AND
0 PH_IN2_SEL R/W 0b 0b = OR
1b = AND
(1) Solenoid - clamping or quick demagnetization possible, but clamping level will be VM dependent
(2) Independent Hi-Z only supported in the SPI variant
(3) Not sensed during recirculation and during OUTx voltage slew times including tblank
(4) Rising edge slew rate capped at 8 V/µsec for higher settings
VM
nFAULT
IPROPI
Controller I/Os SPI (Opt) DRV824X to Controller ADC
(can be shared) Applicable for
DRVOFF
PWM or
BD
BDC
C
PH/EN solenoid
nSLEEP OUT1
mode
EN/IN1 LOAD
to Controller I/O PH/IN2 OUT2
GND
Figure 9-1. Illustration Showing a Full-Bridge Topology With DRV824X-Q1 in PWM or PH/EN Mode
VM
nFAULT
to Controller ADC
IPROPI
Controller I/Os SPI (Opt) Summing current Applicable for
(can be shared) DRV824X
DRVOFF
BD
BDC
C
solenoid
Independent
nSLEEP OUT1
mode LOAD
EN/IN1
to Controller I/O PH/IN2 OUT2
LOAD
GND
Figure 9-2. Illustration Showing Half-Bridge Topology to Drive Two Low-side Loads Independently With
DRV824X-Q1 Device in INDEPENDENT Mode
VM VM
nFAULT
HS Switch for
IPROPI to Controller I/O
Controller I/Os SPI (Opt) clamping
Not useful
(can be shared) (OPT)
DRVOFF DRV824X
Independent
mode
nSLEEP OUT1
solenoid
EN/IN1
to Controller I/O PH/IN2 OUT2
solenoid
GND
Figure 9-3. Illustration Showing a Half-Bridge Topology to Drive Two High-side Loads Independently With
DRV824X-Q1 Device in INDEPENDENT Mode
– Both SPI (P) and SPI (S) variants - This pin can be tied off low or left floating if register only control is
needed.
• PH/IN2 pin
– Both SPI (P) and SPI (S) variants - This pin can be tied off low or left floating if register only control is
needed.
• IPROPI pin
– All variants - Monitoring of this output is optional. Also IPROPI pin can be tied low if ITRIP feature &
IPROPI function is not needed.
• nFAULT pin
– Both SPI (P) and SPI (S) variants - Monitoring of this output is optional. All diagnostic information can be
read from the STATUS registers.
• SPI input pins
– Both SPI (S) and SPI (P) variants - Inputs (SDI, nSCS, SCLK) are compatible with 3.3 V / 5 V levels.
• SPI SDO pin
– SPI (S) variant - SDO tracks the nSLEEP pin voltage.
– SPI (P) variant - SDO tracks the VDD pin voltage. To interface with a 3.3 V level controller input, a level
shifter or a current limiting series resistor is recommended.
• CONFIG pins
– HW (H) variant - Resistor is not needed for short to GND and Hi-Z level selections
• LVL1 and LVL3 for MODE pin
• LVL1 and LVL6 for SR, ITRIP, DIAG pins
9.2.1 HW Variant
VCC VCC
Reverse Supply
SSOP HW Reverse Supply
Protected Input SSOP HW Protected Input
24 6,7,8,21,22,23 24 6,7,8,21,22,23
I/O nSLEEP VM I/O nSLEEP VM
5 5 CVM2
CVM2 I/O DRVOFF CVM1
I/O DRVOFF CVM1
4 4
I/O EN/IN1 I/O EN/IN1
3 3 18,19,20
CONTROLLER
18,19,20
CONTROLLER
VCC VCC
CONTROLLER
CONTROLLER
LOAD
RIPROPI ) RIPROPI VCC VM / GND
VCC 1
RnFAULT 1 RnFAULT
I/O nFAULT I/O nFAULT
14 7 14 7
MODE OUT1 MODE OUT1 LOAD
RMODE RMODE
11 11
DIAG DIAG
Op onal (7)
Op onal (7)
RDIAG RDIAG
13 6 13 6
ITRIP GND ITRIP GND
RITRIP RITRIP
12 12
SR SR
RSR RSR
VCC VCC
Reverse Supply
Reverse Supply
Protected Input
SSOP SPI Protected Input SSOP SPI
24 Oponal (1) 24 6,7,8,21,22,23
Oponal (1) 6,7,8,21,22,23
I/O nSLEEP
I/O nSLEEP VM VM
5 Oponal (2) 5 CVM2
Op onal (2) CVM2 I/O DRVOFF CVM1
I/O DRVOFF CVM1
Oponal (3) 4 Oponal (3) 4
I/O EN/IN1 I/O EN/IN1
18,19,20
CONTROLLER
2 2
S nSCS S nSCS
12,13,14, 12,13,14,
P 28 15,16,17 P 28
SDI GND 15,16,17
SDI GND
I 1 I 1
SCLK SCLK
Figure 9-6. Typical Application Schematic - SPI (S) Variant in HVSSOP Package
VCC VCC
Reverse Supply
Reverse Supply
Protected Input
SSOP SPI Protected Input SSOP SPI
24 6,7,8,21,22,23 24 6,7,8,21,22,23
Logic Supply Logic Supply VDD VM
VDD VM
5 Oponal (2) 5 CVM2
Oponal (2) CVM2 I/O DRVOFF CVM1
I/O DRVOFF CVM1
Op onal (3) 4 Oponal (3) 4
I/O EN/IN1 I/O EN/IN1
CONTROLLER
18,19,20
CONTROLLER
LOAD
RIPROPI RIPROPI VCC VM / GND
VCC 26
RnFAULT 26 RnFAULT
I/O nFAULT I/O nFAULT
Oponal (6) Op onal (6)
27 27 9,10,11
9,10,11 SDO OUT1 LOAD
SDO OUT1
2 2
S nSCS S nSCS
12,13,14, 12,13,14,
P 28 15,16,17 P 28
SDI GND 15,16,17
SDI GND
I 1 I 1
SCLK SCLK
Figure 9-7. Typical Application Schematic - SPI (P) Variant in HVSSOP Package
VCC VCC
11 11
S nSCS S nSCS
P 13 6 P 13
SDI GND
6
SDI GND
I 12 I 12
SCLK SCLK
Figure 9-8. Typical Application Schematic - SPI (S) Variant in VQFN-HR Package
Parasitic Wire
Inductance
Power Supply Motor Drive System
VM
+ +
Motor Driver
±
GND
Local IC Bypass
Bulk Capacitor Capacitor
Figure 10-1. Example Setup of Motor Drive System With External Power Supply
The voltage rating for bulk capacitors should be higher than the operating voltage to provide a margin for cases
when the motor transfers energy to the supply.
11 Layout
11.1 Layout Guidelines
Each VM pin must be bypassed to ground using low-ESR ceramic bypass capacitors with recommended values
of 0.1 μF rated for VM. These capacitors should be placed as close to the VM pins as possible with a thick trace
or ground plane connection to the device GND pin.
Additional bulk capacitance is required to bypass the high current path. This bulk capacitance should be placed
such that it minimizes the length of any high current paths. The connecting metal traces should be as wide as
possible, with numerous vias connecting PCB layers. These practices minimize inductance and allow the bulk
capacitor to deliver high current.
For the SPI (P) device variant, VDD pin may be bypassed to ground using low-ESR ceramic 6.3 V bypass
capacitor with recommended values of 0.1 μF.
11.2 Layout Example
The following figure shows a layout example for a 4 cm X 4 cm x 1.6 mm, 4 layer PCB for a leaded package
device. The 4 layers uses 2 oz copper on top/ bottom signal layers and 1 oz copper on internal supply layers,
with 0.3 mm thermal via drill diameter, 0.025 mm Cu plating, 1 mm minimum via pitch. The same layout can be
adopted for the non-leaded VQFN-HR package as well. The Section 7.5.14 for the 4 cm X 4 cm X 1.6 mm is
based on a similar layout.
Note: The layout example shown is for a full bridge topology using DRV824xQ1 device in SSOP package.
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Reel Reel
Package Package A0 B0 K0 P1 W Pin1
Device Pins SPQ Diameter Width W1
Type Drawing (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) (mm)
PDRV8243SDGQQ1 HVSSOP DGQ 28 3000 330 16.4 5.50 7.40 1.45 8.00 16.00 Q1
PDRV8243PDGQQ1 HVSSOP DGQ 28 3000 330 16.4 5.50 7.40 1.45 8.00 16.00 Q1
PDRV8243HDGQQ1 HVSSOP DGQ 28 3000 330 16.4 5.50 7.40 1.45 8.00 16.00 Q1
PDRV8243SRXYQ1 VQFN-HR RXY 14 5000 180 12.4 2.45 2.75 1.2 4 12 Q1
Width (mm)
H
W
L
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
PDRV8243SDGQQ1 HVSSOP DGQ 28 3000 356 356 35
PDRV8243PDGQQ1 HVSSOP DGQ 28 3000 356 356 35
PDRV8243HDGQQ1 HVSSOP DGQ 28 3000 356 356 35
PDRV8243SRXYQ1 VQFN-HR RXY 14 5000 210 185 35
www.ti.com 6-Dec-2021
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
PDRV8243HRXYQ1 ACTIVE VQFN-HR RXY 14 5000 TBD Call TI Call TI -40 to 125
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 6-Dec-2021
Addendum-Page 2
PACKAGE OUTLINE
RXY0014A VQFN-HR - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
A
3.1
B 2.9
(0.130)
SECTION A-A
TYPICAL
1 MAX C
.05 0.08 C
.00 2X 3.1
2.9
2X 1.475
1.275
1.2 (0.15) TYP (0.2) TYP
1.0
6X (0.4) TYP
1.35 6
(0.16)
10X 0.3
0.2
0.65 7
0.1 C A B
0.05 C
PKG 0
0.05
0.625
PIN1 ID 14 11
(OPTIONAL) 10X 0.5
0.3
PKG 0
0.75
0.25
4226096/A 08/2020
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
www.ti.com
EXAMPLE BOARD LAYOUT
RXY0014A VQFN-HR - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
(0.9125)
(0.9125)
(0) PKG
(0.75)
(0.25)
(0.25)
(0.75)
(1.4)
(1.4)
14 11
10X (0.6)
(2.15)
(1.625) 1
10
(R0.05) TYP
10X (0.25)
(1.125)
(0.05)
PKG (0)
6X (0.25)
(0.65) 7
(0.35) TYP
(1.35) 6
(1.8) (1.3)
SOLDER MASK
OPENING
METAL UNDER 4X
SOLDER MASK 2X (1.575) (0.25)
2X (3.4)
NOTES: (continued)
3. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271) .
4. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
RXY0014A VQFN-HR - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
(0) PKG
(0.9125)
(0.9125)
(0.75)
(0.25)
(0.25)
(0.75)
(1.4)
(0.9)
(0.9)
(1.4)
4X (1.6)
14 11
10X (0.6)
(2.15)
(1.625) 1
10
(R0.05) TYP
10X (0.25)
(1.125)
(0.2)
(0.625) 6X (0.4) TYP
TYP
(0.05)
PKG (0)
6X (0.25)
(0.65) 7
(0.35) TYP
(1.35) 6
(0.2)
4X (0.7)
(2.1)
METAL UNDER 4X
SOLDER MASK (0.25)
2X (1.575)
4226096/A 08/2020
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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