drv8001 q1
drv8001 q1
ADVANCE INFORMATION
• 2 Integrated half-bridges with IOUT maximum 1.3A monitoring and shutdown protection. The device
load (RDSON = 1500mΩ, 750mΩ per FET) features 6 integrated half-bridges (2 high-side
• 1 Configurable integrated high-side driver as lamp alternate modes), 6 integrated high-side drivers, one
or LED driver with IOUT maximum 1.5/0.5A (RDSON external high-side gate driver for heater, one external
= 0.4/1.5Ω) high-side gate driver for electrochromic charge and
• 5 Integrated high-side drivers for 0.5/0.25A load one integrated low-side driver for electrochromic load
(RDSON = 1.5Ω) discharge. Each individual driver has PWM input
– 1 High-side driver to supply electro chromic control configuration, sensing, diagnostics and device
(EC) glass MOSFET system protection. There is a dedicated internal
• 1 External MOSFET gate driver for charge of programmable PWM generators for each high-side
electro chromic glass driver. Proportional current sense pin output is
• 1 Integrated low-side FET for discharge of electro available for all integrated drivers
chromic glass
Package Information
• Internal 10bit PWM generator for high-side drivers
PACKAGE SIZE
• All high-side drivers support a low- or high- current PART NUMBER PACKAGE(1)
(NOM)(2)
threshold constant current mode to drive a wide
DRV8001-Q1 VQFN (40) 6.00mm × 6.00mm
range of LED modules
• 1 External MOSFET gate driver for heater (1) For all available packages, see the orderable addendum at
– Offline open load detection the end of the data sheet.
(2) The package size (length × width) is a nominal value and
– VDS monitoring of low RDSON MOSFET for includes pins, where applicable.
short-circuit detection VBAT
Multifunction
– Advanced die temperature monitoring with Current Sense Driver Safe Lock
M
multiple thermal clusters Power Stage with
Lamp/LED
– Scaled supply voltage output Motor & LED
drivers LED
• Protection and diagnostic features with Current Sense
1…6
2 Applications
• Door module
• Body control modules
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. ADVANCE INFORMATION for preproduction products; subject to change
without notice.
DRV8001-Q1
SLVSHD9 – MARCH 2025 www.ti.com
Table of Contents
1 Features............................................................................1 8.3 DRV8000-Q1_CTRL Registers...............................103
2 Applications..................................................................... 1 8.4 DRV8001-Q1_STATUS Registers...........................113
3 Description.......................................................................1 8.5 DRV8001-Q1_CNFG Registers.............................. 123
4 Device Comparison......................................................... 3 8.6 DRV8001-Q1_CTRL Registers...............................157
5 Pin Configuration and Functions...................................4 9 Application and Implementation................................ 167
6 Specifications.................................................................. 6 9.1 Application Information........................................... 167
6.1 Absolute Maximum Ratings........................................ 6 9.2 Typical Application.................................................. 167
6.2 ESD Ratings Auto....................................................... 6 9.3 Initialization Setup...................................................169
6.3 Recommended Operating Conditions.........................6 9.4 Power Supply Recommendations...........................169
6.4 Thermal Information RHA Package............................ 7 9.5 Layout..................................................................... 169
6.5 Electrical Characteristics.............................................7 10 Device and Documentation Support........................172
6.6 Timing Requirements................................................ 16 10.1 Receiving Notification of Documentation Updates172
7 Detailed Description......................................................17 10.2 Support Resources............................................... 172
ADVANCE INFORMATION
4 Device Comparison
Table 4-1. Device Comparison
H-Bridge Half-bridge High-side Lamp/LED EC Gate Heater HS Current
Device Name Package
Gate Driver Driver Driver HS Driver Driver Gate Driver Shunt Amp
DRV8000-Q1 1x 6x 5x 1x 1x 1x 1x 7x7 QFN-48
Wettable
Flank
DRV8001-Q1 X 6x 5x 1x 1x 1x X 6x6 QFN-40
Wettable
Flank
DRV8002-Q1 1x 6x 5x 1x X X 1x 7x7 QFN-48
Wettable
Flank
ADVANCE INFORMATION
Table 4-2. Device Orderable Information
Device Pre-production Part Number Orderable Part Number EVM
DRV8000-Q1 PDRV8000QWRGZRQ1 DRV8000QRGZRQ1 DRV8000-Q1EVM
DRV8001-Q1 PDRV8001QWRHARQ1 DRV8001QRHARQ1 DRV8001-Q1EVM
DRV8002-Q1 PDRV8002QRGZRQ1 DRV8002QRGZRQ1 DRV8002-Q1EVM
OUT10
OUT12
OUT11
PGND
PVDD
OUT3
OUT6
OUT7
OUT8
OUT9
40
39
38
37
36
35
34
33
32
31
OUT4 1 30 NC
NC 2 29 NC
NC 3 28 NC
PVDD 4 27 GH_HS
VCP 5 26 SH_HS
Thermal
ADVANCE INFORMATION
Pad
PVDD 6 25 ECDRV
OUT5 7 24 ECFB
PGND 8 23 DGND
OUT1 9 22 NC
OUT2 10 21 DVDD
12
13
14
15
16
17
18
19
20
11
nSLEEP
PWM2
PWM1
nSCS
SDI
SDO
SCLK
IPROPI
NC
NC
11 PWM2 I Digital PWM input 2 for regulation of all drivers except electrochrome.
Serial chip select. A logic low on this pin enables serial interface
13 nSCS I Digital
communication. Internal pullup resistor.
14 SDI I Serial data input. Data is captured on the falling edge of the SCLK pin. Internal
Digital
pulldown resistor.
ADVANCE INFORMATION
21 DVDD I Device logic and digital output power supply input. Recommended to connect a
Power
1.0µF, 6.3V ceramic capacitor between the DVDD and GND pins.
22 NC - - No connect.
23 DGND I/O Ground Device ground. Connect to system ground.
24 ECFB I/O For EC control, pin is used as voltage monitor input and fast discharge low-
Power side switch. If the EC drive function is not used, connect this pin to GND
through 10kΩ resistor.
25 ECDRV O For EC control, pin controls the gate of external MOSFET for EC voltage
Analog
regulation
26 SH_HS I Source pin of high-side heater MOSFET and output to heater load. Connect to
Analog
source of high-side MOSFET.
27 GH_HS O Analog Gate driver output for heater MOSFET. Connect to gate of high-side MOSFET.
28 NC - - No connect.
29 NC - - No connect.
30 NC - - No connect.
31 OUT12 O Power 1.5Ω high-side driver output 12. Connect to low-side load.
32 OUT11 O 1.5Ω high-side driver output 11. Configurable as SC protection switch for EC
Power
drive. Connect to low-side load.
33 OUT10 O Power 1.5Ω high-side driver output 10. Connect to low-side load.
34 OUT9 O Power 1.5Ω high-side driver output 9. Connect to low-side load.
36 OUT7 O High-side driver output with configurable RDSON (400 mΩ/1500 mΩ). Connect
Power
to low-side load.
37 PVDD I Device driver power supply input. Connect to the bridge power supply. Connect
Power a 0.1µF, PVDD-rated ceramic capacitor and local bulk capacitance greater than
or equal to 10µF between PVDD and GND pins.
38 OUT6 O Power 160mΩ half-bridge output 6.
6 Specifications
6.1 Absolute Maximum Ratings
over operating temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Power supply pin voltage PVDD –0.3 40 V
Power supply transient voltage ramp PVDD 2 V/µs
Digital Logic power supply voltage ramp DVDD 2 V/µs
Voltage difference between ground pins GND, PGND –0.3 0.3 V
Charge pump pin voltage VCP –0.3 PVDD + 15 V
Digital regulator pin voltage DVDD –0.3 5.75 V
PWM1, PWM2, nSLEEP, SCLK, SDO,
Logic pin voltage –0.3 5.75 V
SDI, nSCS
ADVANCE INFORMATION
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
ADVANCE INFORMATION
ΨJT Junction-to-top characterization parameter 0.1 °C/W
ΨJB Junction-to-board characterization parameter 6.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
4.5 V ≤ VPVDD ≤ 35 V, -40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25˚C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VDIN = 0 V, INx, IPROPI, nSLEEP, SCLK,
IIL Input logic low current –5 5 µA
SDI
IIL Input logic low current VDIN = 0 V, nSCS 25 50 µA
IIH Input logic high current VDIN = 5 V, nSCS –5 5 µA
VDIN = 5 V, INx, IPROPI, nSLEEP, SCLK,
IIH Input logic high current 25 50 µA
SDI
RPD Input pulldown resistance To GND, INx, nSLEEP, SCLK, SDI 140 200 260 kΩ
RPU Input pullup resistance To DVDD, nSCS 140 200 265 kΩ
PUSH-PULL OUTPUT SDO
VOL Output logic low voltage IOD = 5 mA 0.5 V
VOH Output logic high voltage IOD = –5 mA, SDO 0.8 V
ADVANCE INFORMATION
VDS_LVL_HEA VDS overcurrent protection threshold for HEAT_VDS_LVL = 0111b 0.17 0.2 0.23 V
T heater MOSFET HEAT_VDS_LVL = 1000b 0.204 0.240 0.276 V
HEAT_VDS_LVL = 1001b 0.238 0.280 0.322 V
HEAT_VDS_LVL = 1010b 0.272 0.320 0.368 V
HEAT_VDS_LVL = 1011b 0.306 0.360 0.414 V
HEAT_VDS_LVL = 1100b 0.340 0.400 0.460 V
HEAT_VDS_LVL = 1101b 0.374 0.440 0.506 V
HEAT_VDS_LVL = 1110b 0.476 0.560 0.644 V
HEAT_VDS_LVL = 1111b 0.85 1 1.15 V
4.5 V ≤ VPVDD ≤ 35 V, -40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25˚C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
HEAT_VDS_DG = 00b 0.75 1 1.5 µs
HEAT_VDS_DG = 01b 1.5 2 2.5 µs
tDS_HEAT_DG VDS overcurrent protection deglitch time
HEAT_VDS_DG = 10b 3.25 4 4.75 µs
HEAT_VDS_DG = 11b 7.5 8 9 µs
HEAT_VDS_BLK = 00b 3.25 4 4.75 µs
HEAT_VDS_BLK = 01b 7.5 8 9 µs
tDS_HEAT_BLK VDS overcurrent protection blanking time
HEAT_VDS_BLK = 10b 14 16 18 µs
HEAT_VDS_BLK = 11b 28 32 36 µs
VOL_HEAT Open load threshold voltage VSLx = 0 V 1.8 2 2.2 V
Pullup current source open-load
IOL_HEAT VSLx = 0 V; VSHheater = 4.5 V 1 mA
diagnosis activated
ADVANCE INFORMATION
tOL_HEAT Open-load filter time for heater MOSFET 2 ms
ELECTROCHROMIC DRIVER
VPVDD = 13.5 V; TJ = 25 ˚C; IECFB = ±0.5
RDSON Low-side MOSFET on resistance for EC
A 1500 mΩ
ECFB discharge
ECFB_LS_EN = 1b
VPVDD = 13.5 V; TJ = 150 ˚C; IECFB =
RDSON Low-side MOSFET on resistance for EC
±0.5 A 3000 mΩ
ECFB discharge
ECFB_LS_EN = 1b
Output current threshold of low-side VPVDD = 13.5 V; TJ = 25 ˚C; IECFB current
IOC_ECFB 0.5 1 A
MOSFET sink
VPVDD = 13.5 V; TJ = 25 ˚C; IECFB current
tDG_OC_ECFB Overcurrent shutdown deglitch time 10 50 µs
sink
VPVDD = 13.5 V, VDVDD = 5 V, Rload =
dVECFB/dt Slew rate of ECFB, low-side MOSFET 7 V/µs
64 Ω
Open load detection threshold for EC
IOLP_ECFB EC_OLEN = 1b, ECFB_LS_EN = 1b 10 20 30 mA
during discharge
tDG_OLP_ECF
Open load detection deglitch time EC_OLEN = 1b, ECFB_LS_EN = 1b 400 600 µs
B
4.5 V ≤ VPVDD ≤ 35 V, -40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25˚C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ECFB_UV_EN = 1b, EC_ON = 1b,
VECFB_UV Threshold for undervoltage on ECFB 170 200 230 mV
ECFB_UV_TH = 1b
Deglitch time for undervoltage flag on ECFB_UV_EN = 1b, ECFB_UV_DG =
tECFB_UV_DG 16 20 24 µs
ECFB 00b
Deglitch time for undervoltage flag on ECFB_UV_EN = 1b, ECFB_UV_DG =
tECFB_UV_DG 40 50 60 µs
ECFB 01b
Deglitch time for undervoltage flag on ECFB_UV_EN = 1b, ECFB_UV_DG =
tECFB_UV_DG 80 100 120 µs
ECFB 10b
Deglitch time for undervoltage flag on ECFB_UV_EN = 1b, ECFB_UV_DG =
tECFB_UV_DG 160 200 240 µs
ECFB 11b
VPVDD –
VECFB_OV Threshold for overvoltage on ECFB ECFB_OV_EN = 1b, EC_ON = 1b V
1V
ADVANCE INFORMATION
RON_OUT5_H IOUT = 8 A, TJ = 25 ˚C 66 mΩ
High-side MOSFET on resistance
S IOUT = 4 A, TJ = 150 ˚C 132 mΩ
4.5 V ≤ VPVDD ≤ 35 V, -40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25˚C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RON_OUT5_L IOUT = 8 A, TJ = 25 ˚C 66 mΩ
Low-side MOSFET on resistance
S IOUT = 4 A, TJ = 150 ˚C 132 mΩ
RON_OUT6_H
High-side MOSFET on resistance IOUT = 8 A, TJ = 25 ˚C 80 mΩ
S
RON_OUT6_H
High-side MOSFET on resistance IOUT = 4 A, TJ = 150 ˚C 160 mΩ
S
RON_OUT6_L
Low-side MOSFET on resistance IOUT = 8 A, TJ = 25 ˚C 80 mΩ
S
RON_OUT6_L
Low-side MOSFET on resistance IOUT = 4 A, TJ = 150 ˚C 160 mΩ
S
ADVANCE INFORMATION
Output voltage rise/fall time for all half-
SROUT_HB PVDD = 13.5 V; OUTx_SR = 01b 13.5 V/µs
bridge OUTx, 10% - 90%
Output voltage rise/fall time for all half-
SROUT_HB PVDD = 13.5 V; OUTx_SR = 10b 24 V/µs
bridge OUTx, 10% - 90%
ON command or INx (SPI last transition)
tPD_OUT_HB_ Propagation time during output voltage
to OUTx 10% voltage rise (any SR 1.8 8.7 µs
HS_R rise for HS
setting)
ON command or INx (SPI last transition)
tPD_OUT_HB_ Propagation time during output voltage
to OUTx 10% voltage fall (any SR 1.2 9.2 µs
HS_F fall for HS
setting)
ON command or INx (SPI last transition)
tPD_OUT_HB_ Propagation time during output voltage
to OUTx 10% voltage rise (any SR 1.5 8 µs
LS_R rise for LS
setting)
ON command or INx (SPI last transition)
tPD_OUT_HB_ Propagation time during output voltage
to OUTx 10% voltage fall (any SR 1.4 8 µs
LS_F fall for LS
setting)
Dead time during output voltage rise for PVDD = 13.5 V; OUTx_ITRIP_LVL =
tDEAD_HS_ON 1.3 4.7 µs
HS 00b, All SRs
tDEAD_HS_OF Dead time during output voltage fall for PVDD = 13.5 V; OUTx_ITRIP_LVL =
1.1 4.8 µs
F HS 00b, All SRs
Dead time during output voltage rise for PVDD = 13.5 V; OUTx_ITRIP_LVL =
tDEAD_LS_ON 1.4 5.8 µs
LS 00b, All SRs
tDEAD_LS_OF Dead time during output voltage fall for PVDD = 13.5 V; OUTx_ITRIP_LVL =
1.7 14 µs
F LS 00b, All SRs
HALF-BRIDGE PROTECTION CIRCUITS
IOCP_OUT1,2 Overcurrent protection threshold 1.3 2 A
IOCP_OUT3,4 Overcurrent protection threshold 4 8 A
IOCP_OUT5 Overcurrent protection threshold 8 16 A
IOCP_OUT6 Overcurrent protection threshold 7 13 A
OUTX_Y_OCP_DG = 00b (if VPVDD ≥ 28
4.5 6 7.3 µs
V, only option)
Overcurrent protection deglitch time in VPVDD ≤ 28 V, OUTX_Y_OCP_DG = 01b 8 10 12 µs
tDG_OCP_HB
half-bridge drivers(1) (2)
VPVDD ≤ 28 V, OUTX_Y_OCP_DG = 10b 16 20 24 µs
VPVDD ≤ 20 V, OUTX_Y_OCP_DG = 11b 48 60 72 µs
OUT1_ITRIP_LVL = 1b and
0.75 1 A
Current limit to trigger ITRIP regulation OUT2_ITRIP_LVL = 1b
IITRIP_OUT1,2
for OUT1 and OUT2 OUT1_ITRIP_LVL = 0b and
0.60 0.8 A
OUT2_ITRIP_LVL = 0b
4.5 V ≤ VPVDD ≤ 35 V, -40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25˚C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUT3_ITRIP_LVL = 10b and
3 4 A
OUT4_ITRIP_LVL = 10b
Current limit to trigger ITRIP regulation OUT3_ITRIP_LVL = 01b and
IITRIP_OUT3,4 1.7 3.15 A
for OUT3 and OUT4 OUT4_ITRIP_LVL = 01b
OUT3_ITRIP_LVL = 00b and
1.1 1.5 A
OUT4_ITRIP_LVL = 00b
OUT5_ITRIP_LVL = 10b 6.6 8.7 A
Current threshold to trigger ITRIP
IITRIP_OUT5 OUT5_ITRIP_LVL = 01b 5.6 7.5 A
regulation for OUT5
OUT5_ITRIP_LVL = 00b 2.5 3.1 A
Current threshold to trigger ITRIP
IITRIP_OUT6 OUT6_ITRIP_LVL = 10b 5.5 7.1 A
regulation for OUT6
Current threshold to trigger ITRIP
ADVANCE INFORMATION
ITRIP regulation deglitch time for half- OUTX_ITRIP_DG = 01b 4.5 5 5.5 µs
tDG_ITRIP_HB
bridge drivers OUTX_ITRIP_DG = 10b 8 10 12 µs
OUTX_ITRIP_DG = 11b 16 20 24 µs
Under-current threshold for half-bridges
IOLA_OUT1,2 6 20 30 mA
1 and 2
Under-current threshold for half-bridges
IOLA_OUT3,4 15 50 90 mA
3 and 4
Under-current threshold for half-bridges
IOLA_OUT5 40 150 300 mA
5
Under-current threshold for half-bridges
IOLA_OUT6 30 120 240 mA
6
Filter time of open-load signal for half- Duration of open-load condition to set
tOLA_HB 4 ms
bridges the status bit
AIPROPI1,2 Current scaling factor for OUT1-2 650 A/A
AIPROPI3,4 Current scaling factor for OUT3-4 2000 A/A
AIPROPI5 Current scaling factor for OUT5 4000 A/A
AIPROPI6 Current scaling factor for OUT6 3500 A/A
Current sense output accuracy for low
IACC_1,2 0.1 A < IOUT1,2 < 1 A -7 7 %
current OUT1-2
Current sense output accuracy for low
IACC_3,4_LOW 0.1 A < IOUT3,4 < 0.8 A -10 10 %
current OUT3-4
Current sense output accuracy for high
IACC_3,4_HI 0.8 A < IOUT3,4 < 4 A -8 8 %
current OUT3-4
Current sense output accuracy for low
IACC_5_LOW 0.1 A < IOUT5 < 0.8 A -30 30 %
current OUT5
Current sense output accuracy for high
IACC_5_HI 0.8 A < IOUT5 < 8 A -7 7 %
current OUT5
Current sense output error for low
IACC_6_LOW 0.1 A < IOUT6 < 0.8 A -30 30 %
current OUT6
Current sense output accuracy for high
IACC_6_HI 0.8 A < IOUT6 < 8 A -7 7 %
current OUT6
4.5 V ≤ VPVDD ≤ 35 V, -40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25˚C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Resistance on OUTx to GND detected
RS_GND VDVDD = 5 V, VOLP_REF = 2.65 V 1 kΩ
as a short
Resistance on OUTx to PVDD detected
RS_PVDD VDVDD = 5 V, VOLP_REF = 2.65 V 1 kΩ
as a short
Resistance on OUTx detected as an
ROPEN_HB VDVDD = 5 V, VOLP_REF = 2.65 V 1.5 kΩ
open
VOLP_REFH OLP comparator Reference High 2.65 V
VOLP_REFL OLP comparator Reference Low 2 V
Internal pullup resistance on OUTx to
ROLP_PU 1 kΩ
VDD during OLP
Internal pulldown resistance on OUTx to
ROLP_PD 1 kΩ
VDD during OLP
ADVANCE INFORMATION
HIGH-SIDE DRIVERS
RDSON TJ = 25 ˚C; IOUT7 = ±0.5 A 400 mΩ
OUT7 (low High-side MOSFET on resistance in low
RDSON resistance mode TJ = 150 ˚C; IOUT7 = ±0.25 A 800 mΩ
mode)
RDSON TJ = 25 ˚C; IOUT7 = ±0.5 A 1500 mΩ
OUT7 (high High-side MOSFET on resistance in high
RDSON resistance mode TJ = 150 ˚C; IOUT7 = ±0.25 A 2800 mΩ
mode)
SRHS_OUT7_
Slew rate for OUT7 Low RDSON mode OUT7_RDSON_MODE = 1b, 10 to 90% 0.29 V/µs
LO
4.5 V ≤ VPVDD ≤ 35 V, -40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25˚C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Overcurrent threshold in high RDSON
OUT7_RDSON_MODE = 0b 500 750 mA
mode
IOC7
Overcurrent threshold in low RDSON
OUT7_RDSON_MODE = 1b 1500 2500 mA
mode
IOC8, IOC9,
IOC10, Overcurrent threshold OUT8 - OUT12 OUTX_OC_TH = 0b 250 500 mA
IOC11,IOC12
IOC8, IOC9,
IOC10, Overcurrent threshold OUT8 - OUT12 OUTX_OC_TH = 1b 500 1000 mA
IOC11,IOC12
OUT7_RDSON_MODE = 0b,
Constant current level for high-side
ICCM_OUT7 OUT7_CCM_EN = 1b, OUT7_CCM_TO 100 175 mA
driver OUT7 High RDSON
= 0b
ADVANCE INFORMATION
OUT7_RDSON_MODE = 0b,
Constant current level for high-side
ICCM_OUT7 OUT7_CCM_EN = 1b, OUT7_CCM_TO 200 350 mA
driver OUT7 High RDSON
= 1b
OUTX_CCM_EN = 1b, OUTX_CCM_TO
100 175 mA
Constant current level for high-side = 0b
ICCM
drivers OUTX_CCM_EN = 1b, OUTX_CCM_TO
200 350 mA
= 1b
OUTX_CCM_EN = 1b, OUTX_CCM_TO
16 20 24 ms
= 0b
tCCMto Constant current mode time expiration
OUTX_CCM_EN = 1b, OUTX_CCM_TH
8 10 12 ms
= 1b
OUTX_HS_OCP_DG = 00b 4.5 6 7.3 µs
Filter time of open-load signal for high- Duration of open-load condition to set
tOLD_HS 200 250 µs
side drivers the status bit
Current scaling factor for OUT7 in low
AIPROPI7_LO OUT7_RDSON_MODE = 1b 750 A/A
on-resistance mode
4.5 V ≤ VPVDD ≤ 35 V, -40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25˚C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Current scaling factor for OUT7 in high
AIPROPI7_HI OUT7_RDSON_MODE = 0b 250 A/A
on-resistance mode
AIPROPI8,
AIPROPI9,
AIPROPI10, Current scaling factor for OUT8-12 250 A/A
AIPROPI11,
AIPROPI12
IACC_7_HI_RD Current sense output accuracy for OUT7
0.1 A < IOUT7 < 0.5 A -18 18 %
SON in high RDSON mode
IACC_7_LOW_ Current sense output accuracy for OUT7
0.5 A < IOUT7 < 1.5 A -14 14 %
RDSON in low RDSON mode
Current sense output accuracy for low
IACC_8-12_LO 0.05 A < IOUT8-12 < 0.1 A -28 28 %
current OUT8-12
ADVANCE INFORMATION
Current sense output accuracy for high
IACC_8-12_HI 0.1 A < IOUT8-12 < 0.5 A -18 18 %
current OUT8-12
tIPROPI_BLK IPROPI blanking time 32 µs
PROTECTION CIRCUITS
VCP_UV Charge pump undervoltage threshold VVCP - VPVDD, VVCP falling 5.5 6 7 V
tCP_UV_DG Charge pump undervoltage deglitch time 8 10 12.75 µs
VPVDD rising 4.425 4.725 5 V
VPVDD_UV PVDD undervoltage threshold
VPVDD falling 4.15 4.425 4.7 V
VPVDD_UV_H
PVDD undervoltage hysteresis Rising to falling threshold 200 mV
YS
tDVDD_POR_D
DVDD POR deglitch time 5 12 25 µs
G
WD_WIN = 0b 36 40 44 ms
tWD Watchdog timer period
WD_WIN = 1b 90 100 110 ms
AIPROPI_PVD IPROPI PVDD Voltage Sense Output
30 32 34 V/V
D_VOUT Scaling Factor
VIPROPI_TEM
IPROPI Temperature Sense Output –17 +17 °C
P_VOUT
4.5 V ≤ VPVDD ≤ 35 V, -40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25˚C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
THYS Thermal shutdown hysteresis 20 °C
tOTSD_DG Thermal shutdown deglitch time 10 µs
(1) For 20-V < VPVDD < 28-V, the OCP deglicth time must be limited to up to 20-µs (OUTX_HB_OCP_DEG or OUTX_HS_OCP_DEG =
10b).
(2) For VPVDD > 28 V, the OCP deglicth time must be limited to 6-µs (Lowest Deglitch Value, (OUTX_HB_OCP_DEG or
OUTX_HS_OCP_DEG = 00b).
7 Detailed Description
7.1 Overview
The DRV8001-Q1 device integrates multiple types of drivers intended for multiple functions: driving and
diagnosing motor (inductive), resistive and capacitive loads. The devices features 6 integrated half-bridges, 6
integrated high-side drivers, one high-side external MOSFET gate driver for heater, one high-side gate driver for
electrochromic charge and one integrated low-side driver for electrochromic load discharge. Each driver features
current sensing, protection and diagnostics along with system protection and diagnostics, which increases
system integration and reduces total system size and cost.
The half-bridge drivers can be controlled through SPI register or PWM pins PWM1 and PWM2. The half-bridges
have configurable current chopping scheme called ITRIP. Protection circuits include short-circuit protection,
active and passive open load detection.
The high-side drivers can be controlled through SPI register, external PWM pin (PWM1), or with a dedicated
ADVANCE INFORMATION
PWM generator which enables load regulation during operation. High-side drivers also have optional constant
current mode regulation for LED module loads. One high-side driver is configurable to drive either a lamp or LED
load. Protection circuits include short-circuit protection and open load detection.
The device also has an external MOSFET drivers for resistive heating element. The heater MOSFET driver can
be controlled with SPI register or with PWM pin (PWM1) and feature both short-circuit and open load detection.
There is also an electrochromic (EC) mirror driver. The EC driver is controlled only through SPI register. For
EC drive, the driver control loop regulates the EC voltage to a 6-bit target voltage. To discharge the EC
element or change target voltage, there is an integrated low-side MOSFET to discharge the EC element in
either two discharge modes, a PWM discharge and fast discharge options. The EC driver protection includes LS
overcurrent and open load detection.
IPROPI pin is an output pin that can provide proportional current sense from any integrated driver with current
sense. IPROPI can be also configured to output a scaled down PVDD input voltage or one of four internal
temperature cluster output voltage.
OUT1 1.5
Power Supplies PreDriver Power Stage
PVDD
Stage PVDD OUT2 1.5
IOUTX
VCP VCP
Charge OUT3 300 m
Pump HS
OUT4 300 m
VCP
Monitor OUT5 100 m
LS
VPVDD OUT6 100 m
Monitor
VCP
OUT7 0.4 /1.5
ADVANCE INFORMATION
PWM
PWM Generator
Generator
DGND PWM
PWMGenerator
Generator
OUT8...12 1.5
PWM
PWMGenerator HS
HS LED
VDVDD Generator HSLED
LED
Driver
Driver
HS Driver
GND Driver
Digital
Core
GH_HS
nSLEEP Electrochromic
Glass Driver
VDVDD ECFB
nSCS
SCLK
SPI
SDI
SDO
Note
Voltage rating for this capacitor is
based on short to battery assumptions
for ECFB.
Note
ADVANCE INFORMATION
Voltage rating for this capacitor is
based on short to battery assumptions
for ECFB.
This is an external high-side MOSFET gate driver that can be used for driving resistive heating elements. The
driver is controlled through SPI or PWM, and has programmable active short detection and off-state open-load
detection.
7.4.1.1 Heater MOSFET Driver Control
The heater MOSFET driver control mode is configured with HEAT_OUT_CNFG bits in register
ADVANCE INFORMATION
HS_HEAT_OUT_CNFG. The heater configuration bits enable or disable control of the heater output, and
configures the control source. For the heater driver, the control sources are SPI register control and PWM
pin control.
When in SPI register control mode (HEAT_OUT_CNFG = 01b), the heater MOSFET gate drive is enabled and
disabled by setting bit HEAT_EN in the register HS_EC_HEAT_CTRL.
When in PWM control mode (HEAT_OUT_CNFG = 10b), the gate driver is controlled with an external PWM
signal on pin PWM1. If the heater driver is in PWM control mode, then HEAT_EN is ignored.
The table below summarizes the heater driver configuration and control options:
Table 7-4. Heater Configuration
HEAT_OUT_CNFG bits Configuration Description
00b OFF Heater control disabled
01b SPI register control Heater SPI control enabled
10b PWM1 control Heater control by PWM pin 1
11b OFF Heater control disabled
VCP
GH_HS
SH_HS
PVDD
Digital Core
Heater Load
Overcurrent IOL_HEAT
Detection +
–
Open Load
Detection +
VOL_HEAT
–
The timing waveform below shows the expected timing for the heater driver:
tPDR_GH_HS tPDF_GH_HS
50%
VnSCS,PWM1
80%
ADVANCE INFORMATION
VGS(GH_HS)
20%
There is also a heater MOSFET VDS monitor blanking period that is configured in bit HEAT_VDS_BLK in register
ADVANCE INFORMATION
The heater overcurrent monitor can respond and recover in four different modes set through the
HEAT_VDS_MODE register setting.
• Latched Fault Mode: After detecting the overcurrent event, the gate driver pulldown is enabled and
HEAT_VDS is asserted. After the overcurrent event is removed, the fault state remains latched until CLR_FLT
is issued.
• Cycle by Cycle Mode: After detecting the overcurrent event, the gate driver pulldown is enabled and
HEAT_VDS, EC_HEAT and FAULT bits are asserted. EC_HEAT and FAULT status bit in register IC_STAT1
remains asserted until driver control input changes (SPI or PWM). To clear HEAT_VDS bit, a CLR_FLT
command must be sent after an input change. If CLR_FLT is issued before an input change, all three
status bits remain asserted and the driver pulldown stays enabled.
• Warning Report Only Mode: The heater overcurrent event is reported in the WARN and HEAT_VDS bits.
The device does not take any action. The warning remains latched until CLR_FLT is issued.
• Disabled Mode: The heater VDS overcurrent monitors are disabled and do not respond or report.
7.4.1.2.3 Heater MOSFET Open Load Detection
Off-state open-load monitoring is done by comparing the voltage difference SH_HS node when pulled up by
current source against open-load threshold voltage VOL_HEAT. If SH_HS voltage exceeds the open-load threshold
VOL_HEAT for longer than filter time tOL_HEAT, the open-load bit HEAT_OL is set. Open-load monitor is controlled
by bit HEAT_OLP_EN.
Note
The heater open load diagnostics only works when the heater configuration is disabled, where bits
HEAT_OUT_CNFG must be 00b.
The device integrates 6 high-side drivers, OUT7 - OUT12, that can be programmed to drive several load types.
Each high-side driver has selectable high or low current protection and open-load current thresholds. OUT7 can
be configured to drive lamps, bulbs, or LEDs. All high-side drivers also have a fixed-time constant current mode
intended for driving high capacitance LED modules.
ADVANCE INFORMATION
Every high-side driver has open-load detection and short-circuit protection (OCP). OUT7 has an optional ITRIP
regulation for lamp or bulb loads. If the electrochromic driver is used, OUT11 is used to provide protected battery
voltage for the EC element.
Below is a block diagram of the high-side drivers:
PVDD
The table below summarizes all the device high-side drivers with their corresponding feature sets:
Table 7-9. High-Side Drivers and Features
High-Side Driver RDSON (Ω) OL Detect OCP Latch ITRIP CCM Used for EC
Supply
OUT7 0.4/1.5 Yes Yes Yes Yes No
OUT8 1.5 Yes Yes No Yes No
OUT9 1.5 Yes Yes No Yes No
OUT10 1.5 Yes Yes No Yes No
OUT11 1.5 Yes Yes No Yes Yes
OUT12 1.5 Yes Yes No Yes No
In SPI register control mode, (OUTx_CNFG = 01b), the high-side output follows the OUTx_EN bit (ON/OFF).
The table below summarizes the high-side driver configuration options:
Table 7-10. High-side Driver Configuration
OUTx_CNFG bits Configuration Description
00 OFF High-side driver control disabled
01 SPI register control High-side driver SPI control enabled
10 PWM1 pin control High-side driver control by PWM pin 1
11 PWM Generator High-side driver control with dedicated internal
PWM generator
current loads. For example, OUT8 and OUT9 can be connected in parallel as a 600mΩ driver effectively, or
OUT9, OUT10, and OUT12 can be connected in parallel as a 400mΩ driver effectively.
However, there are limitations with this mode of operation:
• Internal PWM control does not work for parallel high-side drivers and must not be configured for this mode of
operation.
• Constant current mode is not be possible and must be disabled.
• Protection circuitry functions, but trip at different thresholds.
If operating in parallel, the high-side drivers must be configured for ON/OFF SPI register control or external
PWM signal control through pin.
7.4.2.1.2 High-side Driver PWM Generator
Each high-side driver has a dedicated PWM generator with 10-bit duty cycle resolution. The frequency and duty
of each PWM generator can be controlled independently.
When configuring the high-side driver for operation with internal PWM generator, the frequency must be selected
before configuring the high-side driver with internal PWM generator.
Required Register Configuration Sequence:
1. Configure the high-side driver PWM frequency mode in register HS_PWM_FREQ_CNFG
2. Set the duty cycle in register OUTx_PWM_DC
3. Configure the driver mode of operation in register HS_HEAT_OUT_CNFG
The frequency of the PWM generator is controlled by bits PWM_OUTX_FREQ from register
HS_PWM_FREQ_CNFG as shown in the table below:
Table 7-11. PWM Frequency
PWM_OUTX_FREQ PWM Frequency (Hz)
00b 108
01b 217
10b 289
11b Reserved
There are two timing and current limit options for constant current mode. This is configured with bit
OUTX_CCM_TO in register HS_REG_CNFG2, summarized in the table below:
Table 7-12. Constant Current Mode Options
OUTX_CCM_TO Current Limit (ICCM) Timeout (tCCMto)
0b 200 mA 20 ms
1b 390 mA 10 ms
This constant current mode feature is enabled only if the OUTx_CCM_EN bit is set prior to enabling the
high-side driver. CCM automatically expires after expiration time tCCMtimeout. After timeout, the driver remains
enabled and configured based on OUTx_CNFG bits in register HS_EC_HEAT_CTRL.
Required Register Configuration Sequence:
1. Configure the high-side driver CCM mode in register HS_REG_CNFG2
ADVANCE INFORMATION
2. Configure the high-side driver operation in register HS_HEAT_OUT_CNFG
If constant current mode is configured after configuring the high-side driver, the CCM mode does not regulate.
For OUTx_CCM_EN bit:
• If OUTx_CCM_EN is cleared by the controller before constant current mode timeout, the driver follows the
command and is switched to the mode corresponding to OUTx_CNFG bits
• If OUTx_CCM_EN is set after the driver has already been enabled, the OUTx_CCM_EN bit is ignored; in this
case OUTx_CCM_EN remains off
The short-circuit and overcurrent detection are active/enabled when the driver is ON, PWM driven, but NOT in
constant current mode. Open load detection is always active.
7.4.2.1.2.2 OUT7 HS ITRIP Behavior
For OUT7 in low-RDSON mode, there is a fixed frequency current regulation feature called HS ITRIP that can
be used to restart the driver if overcurrent occurs. This ITRIP feature (separate from ITRIP for half-bridges) is
available for OUT7 (and EC driver) of the high-side drivers, and intended for loads which have inrush currents
that are higher than the overcurrent protection threshold of a driver, such as a lamp or bulb.
For HS ITRIP to work, OUT7 OCP must be disabled.
If bit OUT7_ITRIP_CNFG bits are non-zero, and the load current on OUT7 exceeds IOC7 threshold, ITRIP
regulation takes place. The status bit is OUT7_ITRIP_STAT in register EC_HEAT_ITRIP_STAT is asserted
depending on OUT7_ITRIP_CNFG configuration.
There is also an optional OUT7 ITRIP timeout feature. Depending on OUT7_ITRIP_CNFG settings, OUT7
or ITRIP regulation can be disabled after timeout is exceeded. For OUT7_ITRIP_CNFG = 01b, OUT7 is
disabled if ITRIP regulation time tOUT7_ITRIP occurs for longer than the configured timeout tOUT7_ITRIP_TO. For
OUT7_ITRIP_CNFG = 11b, ITRIP Regulation is disabled if ITRIP regulation time tOUT7_ITRIP occurs for longer
than the configured timeout tOUT7_ITRIP_TO. In both cases, the status bit OUT7_ITRIP_TO is latched. Bits
OUT7_ITRIP_CNFG is located in register HS_REG_CNFG1. To configure OUT7 ITRIP regulation for indefinite
operation, set OUT7_ITRIP_CNFG = 10b.
The table below summarizes the regulation, status and fault behavior of OUT7 ITRIP.
Table 7-13. OUT7 ITRIP Configuration and Status Summary
OUT7_ITRIP_CN OUT7_ITRIP_CN Mode OUT7_ITRIP_STA ITRIP Stat Fault OUT7_ITRIP_TO ITRIP Timeout
FG[1] FG[0] Description T Clear Fault Clear
0b 0b No ITRIP Latches when CLR_FLT Timeout disabled n/a
regulation OUT7 overcurrent command
threshold
exceeded
OUT7 overcurrent
threshold still
exceeded
00b 100ms
01b 200ms
10b 250ms
11b 290ms
HS ITRIP mode is disabled as the default setting for OUT7. To set OUT7 in HS ITRIP mode:
1. Configure OUT7 for low-RDSON mode by setting bit OUT7_RDSON_MODE = 1 in register HS_OC_CNFG.
2. Enable and configure OUT7 ITRIP by setting bits OUT7_ITRIP_CNFG = 1Xb in register HS_REG_CNFG1
per the OUT7 ITRIP configuration summary table.
3. If timeout is used, configure timeout limit with ITRIP_TO_SEL bits in HS_REG_CNFG1.
4. Set ITRIP timing parameters. ITRIP frequency, blanking and deglitch configured with bits
OUT7_ITRIP_FREQ, OUT7_ITRIP_BLK and OUT7_ITRIP_DG in register HS_REG_CNFG1.
5. Disable OCP for OUT7 with bit OUT7_OCP_DIS in register HS_REG_CNFG1.
Table 7-15. OUT7 ITRIP Frequency Option Summary
Frequency (fITRIP_HS) OUT7_ITRIP_FREQ
1.7kHz 00b
2.2kHz 01b
3kHz 10b
4.4kHz 11b
The ITRIP deglitch timer starts when the OUT7 ITRIP blank time expires. The minimum OUT7 ITRIP ON time
is the sum of blanking and deglitch times, and total period is determined by the OUT7 ITRIP frequency. The
diagram below shows the ITRIP behavior for OUT7.
Unlimited Inrush
Current
ADVANCE INFORMATION
Current during OUT7
ITRIP mode
tOUT7_ITRIP_DG
IOC7
IOUT7
tOUT7_ITRIP_BLK TOUT7_ITRIP_FREQ
t
Figure 7-5. OUT7 ITRIP Behavior with Incandescent Bulb
The recovery activation sequence for OUT7 in HS ITRIP mode has three configurable timing parameters:
• tOUT7_ITRIP_FREQ (1/TOUT7_ITRIP_FREQ)
• tOUT7_ITRIP_BLK
• tOUT7_ITRIP_DG
The blanking time tOUT7_ITRIP_BLK is default 40μs (typ), after which the overcurrent condition can be detected.
tOUT7_ITRIP_DG is the time OUT7 remains on after overcurrent protection threshold is exceeded. TOUT7_ITRIP_FREQ
is the time period of the ITRIP loop, inverse of tOUT7_ITRIP_FREQ. These settings are configurable in register
HS_REG_CNFG1.
7.4.2.1.2.3 High-side Drivers - Parallel Outputs
The high-side drivers OUT8 through OUT12 can be connected in parallel combinations to support even higher
current loads. For example, OUT8 and OUT9 can be connected in parallel as a 600mΩ driver effectively, or
OUT9, OUT10, and OUT12 can be connected in parallel as a 400mΩ driver effectively.
However, there are limitations with this mode of operation:
• Internal PWM control does not work for parallel high-side drivers and must not be configured for this mode of
operation.
• Constant current mode is not be possible and must be disabled.
• Protection circuitry functions, but trip at different thresholds.
If operating in parallel, the high-side drivers must be configured for ON/OFF SPI register control or external
PWM signal control through pin.
7.4.2.1.3 High-side Driver Protection Circuits
IOCPx
OC Status bit
goes high
t
tOCP_HS
Figure 7-6. High-side Drivers Overcurrent Protection
ADVANCE INFORMATION
Load Re-connected LED/Lamp
Load Open
Operaon
Nominal LED/Lamp Current
CLR_FLT
IOUTx OL Status bit
condi ons met
goes high
IOLDx tOLD
t
Figure 7-7. Open-Load Detection for High-side Drivers
The open-load detection test time for each high-side driver is 200μs. The timer does not start until the output
is enabled. Once all enabled drivers have been cycled through, the detection circuit stops. The high-side driver
OLA circuit requires a CLR_FLT to restart the open-load detection cycle.
The high-side driver must be ON for minimum 200μs for the OLA detection to complete. Otherwise, the device
waits until the next PWM cycle. The OFF counter for the OLA detection starts when the high-side driver turns
OFF and ends OLA detection if the driver is detected OFF for more than 10ms.
The device features an integrated electrochromic driver block that can be used to charge or discharge an
electrochromic element of a mirror. The electrochromic driver block charges an external MOSFET to control the
charging and discharge voltage of the element. The driver configuration operates with either high-side driver
OUT11 as protected supply to the element or without OUT11 (independent OUT11 control).
7.4.3.1 Electrochromic Driver Control
ADVANCE INFORMATION
1.2
OUT11
EC Control
PVDD
6-bit
Digital Core + ECDRV
DAC
-
-
ECFB
+
Electrochromic
1.2
Depending on the system implementation, the device electrochrome driver supports configuration where the
drain of electrochrome high-side charge MOSFET can be supplied from either high-side driver OUT11, or
directly from the supply voltage (PVDD). The EC control block can operate independently of the supply, with
independent protection circuits in either configuration. This can be useful if an extra high-side driver is needed
to drive another load. The main limitation in this configuration is that if the charge MOSFET fails short, the
connection to supply cannot be shut off as when OUT11 is used as EC supply. A short and open-load condition
can still be detected when EC supplied with PVDD directly (OUT11 is configured as independent).
OUT11 for EC supply: This configuration is set in register HS_OC_CNFG, bit OUT11_EC_MODE. By default,
OUT11_EC_MODE = 1b, which is configured as the supply for EC drive as shown in the block diagram above.
When in this configuration, bits OUT11_CNFG in register HS_HEAT_OUT_CNFG are ignored (ON/OFF, SPI/
PWM). Both OUT11 and the 1.5Ω ECFB low-side discharge MOSFET have overcurrent and open load detection
active during EC charge and discharge states, respectfully.
PVDD for EC supply, independent OUT11:To use OUT11 as an independent high-side driver (independent of
EC control) to drive a separate load, where the drain of the EC charge MOSFET is connected directly to supply
voltage, set OUT11_EC_MODE = 0b in register HS_OC_CNFG. In this configuration, there is short to battery,
short to ground, and open load detection on ECFB that can be independently enabled during EC charge state,
replacing the diagnostics of OUT11. As before, the ECFB low-side discharge MOSFET protection circuits are
active during EC discharge state. The diagram below shows this configuration:
To enable the EC driver: Set bits EC_ON and EC_V_TAR to the desired target voltage in register
HS_EC_HEAT_CTRL to enable the EC driver control loop. Once these bits are set, EC driver control loop
ADVANCE INFORMATION
is enabled.
For EC element voltage control: Once the EC driver is enabled, the feedback loop of the driver is activated,
and regulates ECFB pin voltage to the target voltage set in bits EC_V_TAR in register HS_EC_HEAT_CTRL.
The target voltage on ECFB pin is binary coded with a full-scale range of either 1.5V or 1.2V, depending if bit
ECFB_MAX in register EC_CNFG is set to 1 or 0, respectively. ECFB_MAX = 0b is the default value (1.2V).
Whenever a new value for the EC voltage is set, there is a blanking time tBLK_ECFB of 250μs for ECFB_HI or
ECFB_LO status indication of ECFB once the control loop begins regulation to the new target value.
The device provides two discharge modes: fast discharge and PWM discharge.
Fast discharge of the EC element: To fully discharge the EC element with fast discharge, the target output
voltage EC_V_TAR must be set to '0b', and bits ECFB_LS_EN and EC_ON must be set to '1b'. When these
three conditions are met, the voltage at pin ECFB is discharged by pulling the internal 1.5Ω low-side MOSFET
on ECFB pin to ground.
1. Configure ECFB_LS_PWM = 0b in register EC_CNFG
2. Set bits ECFB_LS_EN = 1b, EC_ON = 1b and EC_V_TAR = 0b in register HS_EC_HEAT_CTRL.
3. ECFB LS MOSFET is enabled and performs fast discharge of EC mirror.
PWM discharge of the EC element: The steps below outline the PWM discharge cycle of electrochrome driver:
1. Configure ECFB_LS_PWM = 1b in register EC_CNFG
2. Set bits ECFB_LS_EN = 1b, EC_ON = 1b, EC_V_TAR = 0b in register HS_EC_HEAT_CTRL.
3. If the regulation loop detects VECDRV is less than VECFB for longer than tRECHARGE or 3ms, the ECDRV
regulator is switched off and the LS MOSFET on ECFB is activated for approximately 300ms (tDISCHARGE).
During this discharge, the ECDRV output is pulled low to prevent shoot-thru currents.
4. At the end of the discharge pulse tDISCHARGE, the discharge MOSFET is switched off and the regulation loop
is activated again with the new lower value. The regulation loop goes back to step 2, and out of regulation is
again observed (VECDRV - VECFB).
The diagram below shows the PWM discharge cycle of the electrochrome driver:
tRECHARGE tRECHARGE
EC disabled
EC enabled
EC_ON (5k to GND)
nSCS
The status of the voltage control loop is reported through SPI, and TI recommends to observe the report to
determine the EC charge and discharge control timing. If the voltage at pin ECFB is higher than the target value,
then bit ECFB_HI is set. If the voltage at pin ECFB is lower than the target value, ECFB_LO is set. Both ECFB
status bits ECFB_HI and ECFB_LO are valid if the bits are stable for at least the filter time tFT_ECFB. The bits are
not latched, and are not assigned as global faults.
Exit discharge mode: To exit discharge mode, ECFB_LS_EN must be deasserted. If ECFB_LS_EN bit is left
high when a new target voltage is programmed, the control loop does not respond because the internal logic
prevents both OUT11 and ECFB LS from being simultaneously on.
A capacitor of at least 4.7nF has to be added to pin ECDRV, and 220nF capacitor between ECFB and ground to
increase control loop stability. For noise immunity reasons, TI recommends to place the loop capacitors as close
as possible to the respective pins.
If the EC driver is not used, connect ECFB pin to ground.
7.4.3.2 Electrochromic Driver Protection
The electrochromic driver block has multiple protection and detection circuits for both charge and discharge
states. There are the comparator-based detection circuits, protection circuits of OUT11 which are active during
EC charge state (when configured with OUT11 as supply), and protection circuits on ECFB low-side discharge
MOSFET.
EC supplied by OUT11: When the electrochrome drive is configured to be supplied by integrated high-side
driver OUT11, the same protection and diagnostic functions as the other high-side drivers are available (for
example: during an overcurrent detection, the control loop is switched off). These high-side driver protections
are active when the electrochrome is in the charge state (voltage ramp up). When in OUT11 EC mode
( OUT11_EC_MODE = 1b), OUT11 cannot be controlled in PWM mode.
Fault on OUT11 during EC charge: In case of an overtemperature shutdown fault (zone 3 or 4) or overcurrent
fault on OUT11 while EC_ON = 1b (EC control enabled):
• OUT11 is shut off (status register set)
• DAC is reset (EC_V_TAR set to '00000')
ADVANCE INFORMATION
0b Latch (Hi-Z)
Discharge open load detection: While discharging the EC, open-load can also be detected. Bit EC_OLEN in
register EC_CNFG must be set. If the load current on ECFB is below IOL_ECFB_LS for longer than tDG_OL_ECFB_LS,
then the open load status bit ECFB_OL is set, and WARN bit is set in register IC_STAT1.
For EC direct PVDD supply configuration, there are three comparator-based detection circuits that can be used
when EC regulation is active in place of relying on the OUT11 protection and detection circuits. These include:
• Short to Battery detection on ECFB (overvoltage)
• Short to Ground detection on ECFB (undervoltage)
• Open-load detection on ECFB
EC supply direct to PVDD: When the EC block is supplied directly to PVDD, short to battery, short to ground,
and open load detection circuits can be independently enabled with bits ECFB_OV_MODE, ECFB_UV_MODE,
and ECDRV_OL_EN in register EC_CNFG. These detection circuits can be enabled regardless of EC supply
configuration if extra diagnostics are desired. However, if the circuits are not desired, then TI recommends to
disable the circuits in the register.
PVDD
1.5
PVDD
OUT11 Rs
ADVANCE INFORMATION
EC Control
PVDD
6-bit
+ ECDRV
DAC
- 5V
OL
Source
-
ECFB
+
Digital Core
Electrochromic
1.5
OL EC_OL_TH
Filter -
+
StB ECFB_OV
Filter -
+
StG ECFB_UV
Filter -
+
Short to battery/OV detection: ECFB overvoltage or short to battery is detected when ECFB voltage exceeds
PVDD - 1V, or threshold VECFB_OV, for longer than the deglitch time tECFB_OV_DG. Bit ECFB_OV_MODE
determines the driver ECFB overvoltage fault response. The EC overvoltage deglitch time is configured with
bit ECFB_OV_DG in register EC_CNFG.
For over voltage fault response control, bit ECFB_OV_MODE can be configured in register EC_CNFG. If
ECFB_OV_MODE = 00b, then no action is taken during this fault. For ECFB_OV_MODE = 10b, when ECFB
voltage exceeds ECFB_OV for longer than programmed deglitch time tECFB_OV_DG, then the ECFB_OV bit is set
in EC_HEAT_ITRIP_STAT register, and EC_HEAT fault bit is set in register IC_STAT1. For ECFB_OV_MODE
= 10b, when OV on ECFB occurs, the ECDRV pin is pulled down, and the ECFB LS FET is Hi-Z. Faults are
reported in the same registers as for when ECFB_OV_MODE = 01b. The fault responses and bit values are
summarized in the table below:
Table 7-20. Electrochrome Overvoltage Fault Response
ECFB_OV_MODE Fault Response
ADVANCE INFORMATION
00b No action
01b Report fault in register
10b Pulldown ECDRV and ECFB LS FET, report fault in register
Short to ground/UV detection: ECFB undervoltage or short to ground is detected when ECFB voltage
is detected below the programmed threshold VECFB_UV_TH for longer than the programmed deglitch time
tECFB_UV_DG. Bits ECFB_UV_TH and ECFB_UV_DG are set in register EC_CNFG.
Table 7-22. Electrochrome Undervoltage Thresholds
ECFB_UV_TH Undervoltage Threshold
0b 100 mV
1b 200 mV
Note
When the short to ground/undervoltage detection is enabled, if the ECFB target voltage is set
below the programmed threshold, which is either the lowest 4 or 8 bits of resolution depending on
ECFB_UV_TH, a short to ground/undervoltage is detected. If short to ground/undervoltage detection
ADVANCE INFORMATION
is desired, avoid these target voltage values to prevent misdiagnosis of a short to ground/undervoltage
condition.
For undervoltage fault response control, bit ECFB_UV_MODE can be configured in register EC_CNFG.
If ECFB_UV_MODE = 00b, then no action is taken when ECFB voltage falls below ECFB_UV. For
ECFB_UV_MODE = 10b, then the ECFB_UV bit is set in EC_HEAT_ITRIP_STAT register, and EC_HEAT
fault bit is set in register IC_STAT1. For ECFB_UV_MODE = 10b, when UV on ECFB occurs, the ECDRV
pin is pulled down, and the ECFB LS FET is Hi-Z. Faults are reported in the same registers as for when
ECFB_UV_MODE = 01b. The fault responses and bit values are summarized in the table below:
Table 7-23. Electrochrome Undervoltage Fault Response
ECFB_UV_MODE Fault Response
00b No action
01b Report fault in register
10b Pulldown ECDRV and ECFB LS FET, report fault in register
PVDD supplied EC Open-load detection: If the EC block is not configured to be supplied with OUT11, a
separate EC open-load detection circuit can be enabled with bit ECDRV_OL_EN in register EC_CNFG. When
enabled, a current source injects a small current into the ECFB node, and the ECFB voltage is compared with
the open-load threshold voltage. If the open-load threshold is exceeded, an open load condition is detected and
the ECFB_OL bit is set. The truth table below shows possible values for both open load and short to battery
detection status:
Table 7-25. Open Load and Over Voltage Detection Truth Table
ECFB_OL ECFB_OV Status
1b 1b Short to battery/overvoltage
1b 0b Open-load
0b 1b Not possible
0b 0b Normal operation
The device integrates six total half-bridge high-side and low-side FETs, supporting bidirectional drive for up to
five motors; two 1.5-Ω half-bridges, two 300-Ω half-bridges, and two 100-Ω half-bridges. All of these drivers can
be controlled with SPI register, PWM signal that can be sourced from the PWM1 pin or IPROPI/PWM2 pin.
Each driver also has configurable current regulation feature called ITRIP. Half-bridge protection circuits include
overcurrent protection, off-state and active open-load diagnostics.
ADVANCE INFORMATION
The diagrams below show common configurations for the integrated half-bridges to support up to five mirror and
lock motors, and all mirror motors:
VVM
VPVDD
X-adj Y-adj
ADVANCE INFORMATION
M
Mirror
Telescope Mirror Fold
M M
Figure 7-12. Half-bridge Configuration for up to Four Motors (Mirrors only)
When the half-bridges are configured for SPI register control (OUTx_CNFG = 01b), the half-bridges high- and
low-side MOSFETs can be individually controlled in register HB_CTRL with bits OUTx_CTRL. The control truth
table for the half-bridge outputs is shown below:
The half-bridge control mode can be changed anytime SPI communication is available by writing to the bits. This
change is immediately reflected.
When the half-bridges are configured for PWM operation (OUTx_CNFG = 01Xb or 10Xb), the inputs can accept
static or pulse-width modulated (PWM) voltage signals for either 100% or PWM drive modes. The default
behavior for half-bridges during off-state of PWM signal is to Hi-Z the output.
ADVANCE INFORMATION
The device automatically generates the dead-time needed during transitioning between the high-side and low-
side FET on the switching half-bridge. This timing is based on internal FET gate-source voltage. No external
timing is required. This scheme provides minimum dead time while preventing shoot-through current.
7.4.4.2 Half-Bridge ITRIP Regulation
The device half-bridges have optional fixed-frequency load current regulation called ITRIP. This is done by
comparing the active output current against configured current thresholds determined by OUTX_ITRIP_LVL.
OUT1-2 has two possible ITRIP current thresholds, and OUT3-6 also have three current threshold
options. ITRIP thresholds, enables, and timing settings are set individually for each half-bridge in the
HB_ITRIP_CONFIG, HB_ITRIP_FREQ and HB_ITRIP_DG.
As this device has multiple integrated drivers which are enabled at any given time, there is freewheeling
configuration intended to reduce power dissipation during ITRIP half-bridge regulation. Power dissipation
is lower with synchronous rectification (MOSFETs) compared with asynchronous rectification (diodes). The
half-bridge freewheeling is configurable between non- and synchronous rectification (active and passive
freewheeling). The freewheeling settings are shared between half-bridge pairs. The synchronous rectification
for half-bridges during ITRIP regulation is enabled by setting bits NSR_OUTX_DIS in configuration register
HB_OUT_CNFG1.
ITRIP detection is done on both high- and low-side MOSFETs of each half-bridge. ITRIP is dynamically blanked
by internal overcurrent protection circuitry.
The configurable ITRIP timing parameters are frequency and deglitch. The tables below summarize the ITRIP
configuration options.
Table 7-29. Half-bridge ITRIP Synchronous Rectification Settings
NSR_OUTX_DIS ITRIP Half-bridge Off-time Response
0b Hi-Z
1b complementary MOSFET ON
5.5A 01b
2.25A 00b
6.5A 01b
2.75A 00b
2.5A 01b
1.25A 00b
0.7A 0b
2μs 00b
ADVANCE INFORMATION
5μs 01b
10μs 10b
20μs 11b
20kHz 00b
10kHz 01b
5kHz 10b
2.5kHz 11b
Note
If 20kHz ITRIP frequency is desired, the fastest deglitch time is recommended (2μs).
then the half-bridge output goes Hi-Z for the remainder of the ITRIP cycle. The zero-crossing deglitch time is the
same ITRIP deglitch time.
The diagram below shows the ITRIP behavior for a half-bridge:
ITRIP
ITRIP level
tOFF = Period -
tON
ADVANCE INFORMATION
Current tON tON
tBLANK tBLANK tBLANK tBLANK
tDG_ITRIP_HB tOFF tDG_ITRIP_HB tOFF tDG_ITRIP_HB tOFF tOFF
HS_ON
LS_ON
The ITRIP setting can be changed at any time when SPI communication is available by writing to the
OUTX_ITRIP_LVL bits. The change is immediately reflected in device behavior.
If a half-bridge is configured for PWM control and ITRIP, when ITRIP is reached, the behavior is the same as for
SPI register control, but the input now comes from the configured PWM pin.
7.4.4.3 Half-bridge Protection and Diagnostics
The half-bridge drivers are protected against overcurrent. The device also offers on-state and off-state load
monitoring. Fault signaling is done through register HB_STATX.
7.4.4.3.1 Half-Bridge Off-State Diagnostics (OLP)
The user can determine the impedance on a pair of half-bridges using off-state diagnostics while the half-bridges
are disabled in register HB_OUT_CNFGx. This diagnostic passively detects the following fault conditions:
• Output short to VM or GND < 1000Ω
• Open load > 1.5KΩ for high-side load, VM = 13.5V
Note
This diagnostic can NOT detect a load short. However, the user can deduce this logically if an
overcurrent fault (OCP) occurs when an output is actively driven, but OLP diagnostics do not report
any fault in the when the output is disabled. Occurrence of both OCP when an output is actively drive
and OLP when the output is disabled IMP a terminal short (short on selected output node).
DVDD DVDD
ADVANCE INFORMATION
ROLP_PU ROLP_PU
OUTx OUTy
Register control
PGND PGND
OUTx_OLP VOLP_REFH
VOLP_REFL
Register control
The following output, pulldown/pullup and VREF combinations are shown below:
Table 7-33. Off-state Output Pullup/Pulldown and VREF Options
HB_OLP_CNFG Description
00b OLP Off
01b Output X Pullup enabled, Output Y pulldown enabled, Output Y
selected, VREF Low
10b Output X Pullup enabled, Output Y pulldown enabled, Output X
selected, VREF High
11b Output X Pulldown enabled, Output Y pullup enabled, Output Y
selected, VREF Low
The OLP combinations and truth table for a no fault scenario vs. fault scenario for a low-side load is shown
in Table 7-34 For the diagnostics to be active and valid, all half-bridge configurations in bits OUTx_CNFG in
registers HB_OUT_CNFGx must be zero (disabled).
HB_OLP_C Output
nSLEEP OUTX OUTY CMP REF Normal Open Short VM Short
NFG Selected
The following half-bridge pair off-state combinations and selection values are shown below.
Note
If any half-bridge is enabled, then all half-bridge OLP bits are automatically disabled (0b).
ADVANCE INFORMATION
Table 7-35. OUTx & OUTy Configurations
HB_OLP_SEL OUTX & OUTY Pairs Selected
0000b No output
0001b OUT1 & OUT2
0010b OUT1 & OUT3
0011b OUT1 & OUT4
0100b OUT1 & OUT5
0101b OUT1 & OUT6
0110b OUT2 & OUT3
0111b OUT2 & OUT4
1000b OUT2 & OUT5
1001b OUT2 & OUT6
1010b OUT3 & OUT4
1011b OUT3 & OUT5
1100b OUT3 & OUT6
1101b OUT4 & OUT5
1110b OUT4 & OUT6
1111b OUT5 & OUT6
HS & LS
32/128
cycles or
HS & LS HS & LS HS & LS HS & LS HS & LS
5ms or
32/128 32/128 32/128 32/128 32/128
IDLE OUT1 OUT2 OUT3 OUT4 OUT5 OUT6 skip
cycles or cycles or cycles or cycles or cycles or
5ms or 5ms or 5ms or 5ms or 5ms or
skip skip skip skip skip
Global
Fault
Global
Fault
Any given half-bridge is skipped if any of the following three conditions are met:
1. OUTx is disabled (OUTx_CNFG = 00b).
2. Open-load detect is not enabled (OUTx_OLA = 0b) for the half-bridge.
ADVANCE INFORMATION
To re-activate the driver, the fault must first be cleared in register by the MCU by reading the status register. The
diagram below shows the overcurrent behavior of a half-bridge:
tDG_OCP_HB
IOCP_HB_OUTx,y
HBX_STAT
Fault Latched Normal
Operaon
Fault Cleared,
CLR_FLT set
IOUTx
VOUTx
ADVANCE INFORMATION
Figure 7-16. Overcurrent Behavior for Half-bridges
The IPROPI pin is a multipurpose pin which can also be used as second PWM pin control input option for
half-bridges, therefore the IPROPI/PWM2 pin mode is controlled with bit IPROPI_MODE in register IC_CTRL.
The diagram below shows the simple block diagram for the selectable IPROPI output:
IPROPI_SEL
To
IPROPI VTHERMX_OUT
MCU
ADC VPVDD_OUT
IOUTX
RIPROPI
GND
ADVANCE INFORMATION
For current output, the IPROPI output analog current is scaled by AIPROPI as follows:
For voltage output of PVDD, the voltage is scaled down by a factor of 32 from a range of 4.5V to 40V. The PVDD
voltage output is as follows:
VIPROPI = VPVDD / 32
For example:
• IPROPI_SEL is selected for PVDD
• PVDD is 13.5V
• VIPROPI = 0.422V
The IPROPI output can also provide analog voltage representation of any single of the four thermal cluster
temperature. This is intended for use in testing and evaluation, but not during device run-time.
For voltage conversion of thermal cluster temperature output reading, the voltage is scaled according to the
temperature range –40°C to 185°C and output voltage range of 0V to 3V. The voltage read out :
VIPROPI = A + B × Cluster Temperature
where A is offset roughly equal to 980mV, and B is slope of 2mV/°C.
When the cluster temperature is –40°C, the IPROPI output voltage is 980mV. At 185°C the IPROPI voltage is
1.35V.
The IPROPI pin must be connected to an external resistor (RIPROPI) to ground to generate proportional voltage
VIPROPI. This allows for the load current to be measured as a voltage-drop across the RIPROPI resistor in the
application so that the full range of the controller ADC is utilized.
When the output is switched off, the current monitor output is in high impedance mode. The IPROPI output
also has an optional sample and hold circuit that can be enabled with bit IPROPI_SH_EN in register
HB_OUT_CNFG1.
7.4.6 Protection Circuits
ADVANCE INFORMATION
setting.
• Latched Fault Mode: After the undervoltage condition is removed, the fault state remains latched and
charge pump disabled until CLR_FLT is issued.
• Automatic Recovery Mode: After the undervoltage condition is removed, the FAULT register bit is
automatically cleared and the charge pump automatically reenabled. The PVDD_UV register bit remains
latched until CLR_FLT is issued.
7.4.6.4 VCP Charge Pump Undervoltage Lockout (VCP_UV)
If at any time the voltage on the VCP pin falls below the VVCP_UV threshold for longer than the tVCP_UV_DG time,
the DRV8001-Q1 detects a VCP undervoltage condition. After detecting the undervoltage condition, the gate
driver pulldowns are enabled and FAULT register bit, and VCP_UV register bit is asserted. The undervoltage
threshold can be adjusted through the VCP_UV_LVL register setting.
The VCP undervoltage monitor can recover in two different modes set through the VCP_UV_MODE register
setting.
• Latched Fault Mode: Additionally the charge pump is disabled in latched fault mode. After the undervoltage
condition is removed, the fault state remains latched and charge pump disabled until CLR_FLT is issued.
• Automatic Recovery Mode: After the undervoltage condition is removed, the FAULT register bit is
automatically cleared and the driver automatically reenabled. The VCP_UV register bit remains latched until
CLR_FLT is issued.
7.4.6.5 Thermal Clusters
As there are multiple drivers and types of drivers on this device, there are multiple dedicated thermal sensors
located on chip to monitor key block temperatures on the chip. Each of these sensors, called thermal clusters,
measure local die temperature for specific device blocks. These measurements can be converted to a voltage
for output on IPROPI pin, used to trigger temperature warnings or to shutdown a specific cluster which is
exceeding acceptable temperature range or the entire device.
The device response to thermal cluster warnings can be configured with bit OTSD_MODE in the IC_CNFG1
register:
• Default mode (OTSD_MODE = 0b): if any cluster reaches thermal shutdown threshold for longer than
tOTSD_DG, the entire device is shutoff.
• Cluster mode (OTSD_MODE = 1b): if a cluster reaches thermal shutdown threshold for longer than tOTSD_DG,
only that cluster is shutoff.
There are four zones defined with thermal clusters, shown in the table and diagram below:
OUT10
OUT12
OUT11
PGND
PVDD
OUT3
OUT6
OUT7
OUT8
OUT9
40
39
38
37
36
35
34
33
32
31
OUT4 1 30 NC
NC 2 Zone 2 29 NC
Zone 3
NC 3 28 NC
PVDD 4 27 GH_HS
VCP 5 26 SH_HS
Thermal
Pad
PVDD 6 25 ECDRV
Zone 1 Zone 4
ADVANCE INFORMATION
OUT5 7 24 ECFB
PGND 8 23 DGND
OUT1 9 22 NC
OUT2 10 21 DVDD
12
13
14
15
16
17
18
19
20
11
nSLEEP
PWM2
PWM1
nSCS
SDI
SDO
SCLK
IPROPI
NC
NC
Figure 7-18. Thermal Sensor Zones
For each zone, there are comparator-based warnings for two temperature points, 115° for low and 140°C for
high. Bit ZONEX_OTW_X (L or H) is latched in register IC_STAT2. Each warning can be individually disabled
with bit ZONEX_OTW_X_DIS in register IC_CNFG2. If overtemperature shutdown occurs, ZONEX_OTSD bit is
latched in register IC_STAT2.
7.4.6.6 Watchdog Timer
The device integrates a programmable window type SPI watchdog timer to verify that the external controller
is operating and the SPI bus integrity is monitored. The SPI watchdog timer can be enabled by through the
WD_EN SPI register bit. The watchdog timer is disabled by default. When the watchdog timer is enabled, an
internal timer starts to count up. The watch dog timer is reset by inverting the WD_RST SPI register. This
WD_RST must be issued between the lower window time and the upper window time. If a watchdog timer fault
is detected, the device response can be configured to either report only a warning or report a fault and disable
all drivers. The watch dog fault can be cleared with a CLR_FLT command. If the watchdog is set to disable all
drivers, the drivers are enabled after a CLR_FLT command is sent to remove the watchdog fault condition.
ADVANCE INFORMATION
PVDD PVDD > PVDD_OV Automatic Active Active Pulldown Active SPI
Overvoltage VPVDD_OV PVDD_OV Warning Active Active Active Active WARN, SPI
n/a Disabled Active Active Active Active n/a
Semi-Active
Latched Active Disabled Disabled SPI
VCP VCP < Pulldown
VCP_UV
Undervoltage VVCP_UV Semi-Active
Automatic Active Active Disabled SPI
Pulldown
Half-bridge IOUTx > IOCPx HB, Latched Active Active Affected Active SPI
Overcurrent OUTx_HS_O driver Hi-Z
Fault (OUT1- CP,
OUT6) OUTx_LS_O
CP
Half-bridge IOUTx < HB, Latched Active Active Active Active WARN
active open IOLP_OUTx OUTx_OLA
load Fault
(OUT1-OUT6)
Half-bridge IOUTx < HB, Live Active Active n/a Active WARN
passive open IOLP_OUTx HB_OLP_STA
load Fault T
(OUT1-OUT6)
High-side IOUTx > IOCPx HS, Latched Active Active Affected Active SPI
Driver OUTx_OCP driver Hi-Z
overcurrent
Fault (OUT7-
OUT12)
High-side IOUT7 > IOC7 ITRIP, Warning Active Active n/a Active WARN
Driver OUT7 OUT7_ITRIP_
ITRIP STAT
tOUT7_ITRIP > HS, ITRIP, Latched Active Active OUT7 Hi-Z Active SPI
tOUT7_ITRIP_TO OUT7_ITRIP_ after timeout
TO,
OUT7_ITRIP_
STAT
IOUT7 > IOC7 ITRIP, Warning Active Active OUT7 ITRIP Active WARN
OUT7_ITRIP_ regulation
STAT indefinite
tOUT7_ITRIP > ITRIP, Warning Active Active OUT7 ITRIP Active WARN
tOUT7_ITRIP_TO OUT7_ITRIP_ regulation
TO, disabled;
OUT7_ITRIP_
STAT
7.5 Programming
7.5.1 Serial Peripheral Interface (SPI)
An SPI bus is used to set device configurations, operating parameters, and read out diagnostic information on
the DRV8001-Q1 device. The SPI operates in peripheral mode and connects to a controller. The SPI input data
(SDI) word consists of a 24 bit word, with an 8 bit command and 16 bits of data. The SPI output data (SDO) word
for read commands consists of the fault status indication bits and then the register data being accessed for read
commands. The SDO word for write commands consists of the command data followed by the existing data in
ADVANCE INFORMATION
the written register. The data sequence between the MCU and the SPI peripheral driver is shown in Figure 7-19.
nSCS
A1 D1
SDI
SDO
S1 R1
nSCS
SCLK
Capture
Point
ADVANCE INFORMATION
Propagate
Point
The SDO output data word is 24 bits long and the first 8 bits makes up the IC status register. The report word is
the content of the register being accessed.
For a write command (W0 = 0), the response word consists of the fault status indication bits followed by the
existing data in the register being written to.
For a read command (W0 = 1), the response word consists of the fault status indications bits followed by the
data currently in the register being read.
Table 7-41. SDO Output Data Word Format
IC Status Report
B15 B14 B13 B12 B11 B10 B9 B8
Bit B23 B22 B21 B20 B19 B18 B17 B16
B7 B6 B5 B4 B3 B2 B1 B0
nSCS
tCLK
SCLK
tCLKH tCLKL
ADVANCE INFORMATION
SDI X MSB LSB X
tSU_SDI tH_SDI
tD_SDO tDIS_nSCS
15 14 13 12 11 10 9 8
Name Type Addr
7 6 5 4 3 2 1 0
SPI_OK POR FAULT WARN RSVD HB EC_HEAT HS
IC_STAT1 R 00h
PVDD_UV PVDD_OV VCP_UV OTW OTSD WD_FLT ITRIP OUT7_ITRIP_TO
PARITY RSVD SCLK_FLT RSVD ZONE4_OTSD ZONE3_OTSD ZONE2_OTSD ZONE1_OTSD
IC_STAT2 R 01h
ZONE4_OTW_H ZONE3_OTW_H ZONE2_OTW_H ZONE1_OTW_H ZONE4_OTW_L ZONE3_OTW_L ZONE2_OTW_L ZONE1_OTW_L
RSVD RSVD R 02h
RSVD OUT6_LS_OCP OUT5_LS_OCP OUT4_LS_OCP OUT3_LS_OCP OUT2_LS_OCP OUT1_LS_OCP
HB_STAT1 R 03h
RSVD OUT6_HS_OCP OUT5_HS_OCP OUT4_HS_OCP OUT3_HS_OCP OUT2_HS_OCP OUT1_HS_OCP
RSVD OUT6_OLP OUT5_OLP OUT4_OLP OUT3_OLP OUT2_OLP OUT1_OLP
HB_STAT2 R 04h
RSVD OUT6_OLA OUT5_OLA OUT4_OLA OUT3_OLA OUT2_OLA OUT1_OLA
ECFB_UV ECFB_OV ECFB_OV ECFB_UV ECFB_OC ECFB_OL HEAT_OL HEAT_VDS
EC_HEAT_IT
OUT7_ITRIP_ST OUT6_ITRIP_ST OUT5_ITRIP_ST OUT4_ITRIP_ST OUT3_ITRIP_ST OUT2_ITRIP_ST OUT1_ITRIP_ST R 05h
RIP_STAT OUT7_ITRIP_TO
AT AT AT AT AT AT AT
RSVD OUT12_OLA OUT11_OLA OUT10_OLA OUT9_OLA OUT8_OLA OUT7_OLA
HS_STAT R 06h
RSVD OUT12_OCP OUT11_OCP OUT10_OCP OUT9_OCP OUT8_OCP OUT7_OCP
SPARE_STAT
RSVD R 07h
1
SPARE_STAT
DEVICE_ID R 08h
2
OTSD_MODE DIS_CP PVDD_OV_MODE PVDD_OV_DG PVD_OV_LVL VCP_UV_LVL
IC_CNFG1 PVDD_UV_MOD R/W 09h
CP_MODE VCP_UV_MODE WD_EN WD_FLT_M WD_WIN EN_SSC
E
RSVD
IC_CNFG2 ZONE4_OTW_H ZONE3_OTW_H ZONE2_OTW_H ZONE1_OTW_H ZONE4_OTW_L_ ZONE3_OTW_L_ ZONE2_OTW_L_ ZONE1_OTW_L_ R/W 0Ah
_DIS _DIS _DIS _DIS DIS DIS DIS DIS
0Bh -
RSVD RSVD from 0Bh to 13h R
13h
ADVANCE INFORMATION
OUT12_CCM_T OUT11_CCM_T OUT10_CCM_T
RSVD OUT9_CCM_TO OUT8_CCM_TO OUT7_CCM_TO
HS_REG_CN O O O
R/W 21h
FG2 OUT12_CCM_E OUT11_CCM_E OUT10_CCM_E
RSVD OUT9_CCM_EN OUT8_CCM_EN OUT7_CCM_EN
N N N
Complex bit access types are encoded to fit into small table cells. Table 8-4 shows the codes that are used for
access types in this section.
Table 8-4. DRV8000-Q1_STATUS Access Type Codes
Access Type Code Description
Read Type
R R Read
Reset or Default Value
-n Value after reset or the default
value
ADVANCE INFORMATION
13 FAULT R 0h General Fault indicator.
Indicates a device or driver fault has occurred.
0b = No fault.
1b = Fault detected.
12 WARN R 0h General warning indicator.
Indicates a warning is present.
0b = No warning.
1b = Warning is present.
11 GD R 0h Logic OR of VDS and VGS fault indicators for gate driver.
10 HB R 0h Logic OR of overcurrent and open load fault indicators for half-
bridges.
9 EC_HEAT R 0h Logic OR of EC OV/UV, overcurrent, open load fault indicators for
EC and heater.
8 HS R 0h Logic OR of overcurrent and open load fault indicators for high-side
drivers.
7 PVDD_UV R 0h Indicates undervoltage fault on PVDD pin.
6 PVDD_OV R 0h Indicates overvoltage fault on PVDD pin.
5 VCP_UV R 0h Indicates undervoltage fault on VCP pin.
4 OTW R 0h Indicates overtemperature warning.
3 OTSD R 0h Indicates overtemperature shutdown
2 WD_FLT R 0h Indicates watchdog timer fault.
1 ITRIP R 0h Indicates ITRIP regulation warning when any OUTx entered ITRIP.
0 OUT7_ITRIP_TO R 0h Indicates OUT7 ITRIP timeout has occurred when set.
ADVANCE INFORMATION
12 STC_WARN_F R 0h Indicates falling slew time TDRV overflow for half-bridge 1 and 2.
11 PCHR_WARN R 0h Indicates pre-charge underflow or overflow fault for half-bridge 1 and
2.
10 PDCHR_WARN R 0h Indicates pre-discharge underflow or overflow fault for half-bridge 1
and 2.
9 IDIR_WARN R 0h Indicates unknown current direction for half-bridge 1 and 2
8 IDIR R 0h Indicates current direction for half-bridge 1 and 2.
7 VGS_L2 R 0h Indicates VGS gate fault on the low-side 2 MOSFET.
6 VGS_H2 R 0h Indicates VGS gate fault on the high-side 2 MOSFET.
5 VGS_L1 R 0h Indicates VGS gate fault on the low-side 1 MOSFET.
4 VGS_H1 R 0h Indicates VGS gate fault on the high-side 1 MOSFET.
3 VDS_L2 R 0h Indicates VDS overcurrent fault on the low-side 2 MOSFET.
2 VDS_H2 R 0h Indicates VDS overcurrent fault on the high-side 2 MOSFET.
1 VDS_L1 R 0h Indicates VDS overcurrent fault on the low-side 1 MOSFET.
0 VDS_H1 R 0h Indicates VDS overcurrent fault on the high-side 1 MOSFET.
ADVANCE INFORMATION
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 HB_OLP_STAT R 0h Indicates off-state open load fault on the selected half-bridge output
per HB_OLP_CNFG bits (OUTX or OUTY).
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 OUT6_OLA R 0h Indicates active open load fault on half-bridge OUT6.
4 OUT5_OLA R 0h Indicates active open load fault on half-bridge OUT5.
3 OUT4_OLA R 0h Indicates active open load fault on half-bridge OUT4.
2 OUT3_OLA R 0h Indicates active open load fault on half-bridge OUT3.
1 OUT2_OLA R 0h Indicates active open load fault on half-bridge OUT2.
0 OUT1_OLA R 0h Indicates active open load fault on half-bridge OUT1.
ADVANCE INFORMATION
10 OUT19_OLA R 0h Indicates open load fault on OUT9.
9 OUT8_OLA R 0h Indicates open load fault on OUT8.
8 OUT7_OLA R 0h Indicates open load fault on OUT7.
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 OUT12_OCP R 0h Indicates overcurrent fault on OUT12.
4 OUT11_OCP R 0h Indicates overcurrent fault on OUT11.
3 OUT10_OCP R 0h Indicates overcurrent fault on OUT10.
2 OUT9_OCP R 0h Indicates overcurrent fault on OUT9.
1 OUT8_OCP R 0h Indicates overcurrent fault on OUT8.
0 OUT7_OCP R 0h Indicates overcurrent fault on OUT7.
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
ADVANCE INFORMATION
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 DEVICE_ID_7 R 0h Device ID bit field 7.
6 DEVICE_ID_6 R 0h Device ID bit field 6.
5 DEVICE_ID_5 R 0h Device ID bit field 5.
4 DEVICE_ID_4 R 0h Device ID bit field 4.
3 DEVICE_ID_3 R 0h Device ID bit field 3.
2 DEVICE_ID_2 R 0h Device ID bit field 2.
1 DEVICE_ID_1 R 0h Device ID bit field 1.
0 DEVICE_ID_0 R 1h Device ID bit field 0.
DRV8000-Q1 address is 0x01.
Complex bit access types are encoded to fit into small table cells. Table 8-15 shows the codes that are used for
access types in this section.
Table 8-15. DRV8000-Q1_CNFG Access Type Codes
Access Type Code Description
Read Type
ADVANCE INFORMATION
ADVANCE INFORMATION
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 ZONE4_OTW_H_DIS R/W 0h Disables the high overtemperature warning for zone 4.
Enabled = 0b
Disabled = 1b
6 ZONE3_OTW_H_DIS R/W 0h Disables the high overtemperature warning for zone 3.
Enabled = 0b
Disabled = 1b
5 ZONE2_OTW_H_DIS R/W 0h Disables the high overtemperature warning for zone 2.
Enabled = 0b
Disabled = 1b
4 ZONE1_OTW_H_DIS R/W 0h Disables the high overtemperature warning for zone 1.
Enabled = 0b
Disabled = 1b
3 ZONE4_OTW_L_DIS R/W 0h Disables the low overtemperature warning for zone 4.
Enabled = 0b
Disabled = 1b
2 ZONE3_OTW_L_DIS R/W 0h Disables the low overtemperature warning for zone 3.
Enabled = 0b
Disabled = 1b
1 ZONE2_OTW_L_DIS R/W 0h Disables the low overtemperature warning for zone 2.
Enabled = 0b
Disabled = 1b
0 ZONE1_OTW_L_DIS R/W 0h Disables the low overtemperature warning for zone 1.
Enabled = 0b
Disabled = 1b
ADVANCE INFORMATION
12 IDRV_LO2 R/W 0h Enable low current IDRVN and IDRVP mode for half-bridge 2.
0b = IDRVP_2 and IDRVN_2 utilize standard values.
1b = IDRVP_2 and IDRVN_2 utilize low current values.
11 PU_SH_1 R/W 0h Gate driver 1 pull up diagnostic current source.
Set EN_OLSC = 1b to use.
0b = Disabled.
1b = Enabled.
10 PD_SH_1 R/W 0h Gate driver 1 pull down diagnostic current source.
Set EN_OLSC = 1b to use.
0b = Disabled.
1b = Enabled.
9 PU_SH_2 R/W 0h Gate driver 2 pull up diagnostic current source.
Set EN_OLSC = 1b to use.
0b = Disabled.
1b = Enabled.
8 PD_SH_2 R/W 0h Gate driver 2 pull down diagnostic current source.
Set EN_OLSC = 1b to use.
0b = Disabled.
1b = Enabled.
7 RESERVED R 0h Reserved
6 IN2_MODE R/W 0h Sets gate driver 2 control source.
0b = Input pin IN2.
1b = SPI control bit S_IN2.
5 IN1_MODE R/W 0h Sets gate driver 1 control source.
0b = Input pin IN1.
1b = SPI control bit S_IN1.
4 BRG_FW R/W 0h Gate driver 1 and 2 control freewheeling setting.
Settings shared between half-bridges 1 and 2.
0b = Low-side freewheeling.
1b = High-side freewheeling.
3-2 BRG_MODE R/W 0h Gate driver 1 and 2 input control mode.
00b = Independent half-bridge input control.
01b = PH/EN H-bridge input control.
10b = PWM H-bridge input control.
1 EN_OLSC R/W 0h Offline open load and short circuit diagnostic enable.
0b = Disabled.
1b = VDS monitors set into real-time voltage monitor mode and
diagnostics current sources enabled.
0 EN_GD R/W 0h Enable gate driver bit
0b = Driver inputs are ignored and the gate driver passive pull-downs
are enabled.
1b = Gate driver outputs are enabled and controlled by the digital
inputs.
ADVANCE INFORMATION
1101b = 31mA (1.6mA)
1110b = 48mA (1.8mA)
1111b = 62mA (2.3mA)
0b = Disabled.
1b = Enabled.
VGS gate fault only shutsdown the associated half-bridge.
10-9 VGS_TDEAD R/W 0h Insertable digital dead-time.
00b = 0ns
01b = 2µs
10b = 4µs
11b = 8µs
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6-4 VGS_TDRV R/W 3h VGS drive time and VDS monitor blanking time.
000b = 2µs
001b = 4µs
010b = 8µs
011b = 12µs
100b = 16µs
101b = 24µs
110b = 32µs
111b = 96µs
3 VGS_HS_DIS R/W 0h VGS monitor based dead-time handshake.
0b = Enabled.
1b = Disabled.
Gate drive transition based on tDRIVE and tDEAD time duration
2 VGS_LVL R/W 0h VGS monitor threshold for dead-time handshake and gate fault
detection.
0b = 1.4V.
1b = 1.0V
1-0 VGS_MODE R/W 0h VGS gate fault monitor mode.
00b = Latched fault.
01b = Cycle by cycle.
10b = Warning report only.
11b = Disabled.
ADVANCE INFORMATION
13-12 VDS_IDRVN R/W 0h IDRVN gate pulldown current after VDS_OCP fault for gate driver 1
and 2.
00b = Programmed IDRVN
01b = 8mA
10b = 31mA
11b = 62mA
11-8 VDS_LVL_1 R/W Dh Gate Driver 1 HS and LS VDS overcurrent monitor threshold.
0000b = 0.06V
00001b = 0.08V
0010b = 0.10V
0011b = 0.12V
0100b = 0.14V
0101b = 0.16V
0110b = 0.18V
0111b = 0.2V
1000b = 0.3V
1001b = 0.4V
1010b = 0.5V
1011b = 0.6V
1100b = 0.7V
1101b = 1V
1110b = 1.4V
1111b = 2V
7-6 VDS_MODE R/W 0h VDS overcurrent monitor mode.
00b = Latched fault.
01b = Cycle by cycle.
10b = Warning report only.
11b = Disabled.
5-4 VDS_DG R/W 2h VDS overcurrent monitor deglitch time.
00b = 1µs
01b = 2µs
10b = 4µs
11b = 8µs
1110b = 1.4V
1111b = 2V
ADVANCE INFORMATION
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7-5 CSA_BLK R/W 0h Current shunt amplifier blanking time.
% of tDRV.
000b = 0 %, Disabled
001b = 25 %
010b = 37.5 %
011b = 50 %
100b = 62.5 %
101b = 75 %
110b = 87.5 %
111b = 100 %
4 CSA_BLK_SEL R/W 0h Current shunt amplifier blanking trigger source.
0b = Gate driver 1
1b = Gate driver 2
3-2 CSA_GAIN R/W 1h Current shunt amplifier gain setting.
00b = 10V/V
01b = 20V/V
10b = 40V/V
11b = 80V/V
1 CSA_DIV R/W 0h Current shunt amplifier internal reference voltage divider.
0b = VREF / 2
1b = VREF / 8
0 RESERVED R 0h Reserved
01b = 62mA
10b = 124mA
11b = RSVD
11-10 AGD_THR R/W 1h Adaptive gate driver VSH threshold configuration.
00b = 1V, VPVDD - 0.5V
01b = 1V, VPVDD - 1V
10b = 2V, VPVDD - 1.5V
11b = 2V, VPVDD - 2V
9 SET_AGD R/W 0h Set active half-bridge for adaptive gate drive control loops.
0b = Gate driver 1
1b = Gate driver 2
8 FW_MAX R/W 0h Gate drive current used for freewheeling MOSFET for gate driver 1
and 2.
0b = PRE_CHR_MAX_12 [1:0] 1b = 64mA
7 EN_DCC R/W 0h Enable duty cycle compensation for half-bridge 1 and 2.
6 IDIR_MAN R/W 0h Current polarity detection mode for half-bridge 1 and 2.
0b = Automatic
1b = Manual (Set by HBx_HL)
5-4 KP_PST R/W 0h Post charge proportional control gain setting for half-bridges 1 and 2.
00b = Disabled
01b = 2
10b = 4
11b = 15
3 EN_PST_DLY R/W 0h Enable post-charge time delay.
Time delay is equal to T_DON_DOFF_12 - T_PRE_CHR_12.
2-1 KP_PDR R/W 1h PDR proportional controller gain setting for half-bridge 1 and 2.
00b = 1
01b = 2
10b = 3
11b = 4
0 EN_PDR R/W 0h Enable PDR loop control for half-bridge 1 and 2.
ADVANCE INFORMATION
140ns x T_DON_DOFF [3:0] Default time: 001010b (1.4us)
7-6 T_PRE_CHR R/W 3h PDR control loop pre-charge time for half-bridge 1 and 2.
Set as ratio of T_DON_DOFF_12 [5:0]
00b = 1/8
01b = 1/4
10b = 3/8
11b = 1/2
5-4 T_PRE_DCHR R/W 3h PDR control loop pre-discharge time for half-bridge 1 and 2.
Set as ratio of T_DON_DOFF_12 [5:0]
00b = 1/8
01b = 1/4
10b = 3/8
11b = 1/2
3-2 PRE_CHR_INIT R/W 1h PDR control loop initial pre-charge current setting for half-bridge 1
and 2.
00b = 4mA
01b = 8mA
10b = 16mA
11b = 32mA
1-0 PRE_DCHR_INIT R/W 2h PDR control loop initial pre-discharge current setting for half-bridge 1
and 2.
00b = 4mA
01b = 8mA
10b = 16mA
11b = 32mA
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7-4 T_RISE_FALL R/W 2h Set switch-node VSH rise and fall time for half-bridge 1 and 2.
0000b = 0.35us
0001b = 0.56us
0010b = 0.77us
0011b = 0.98us
0100b = 1.33us
0101b = 1.68us
0110b = 2.03us
0111b = 2.45us
1000b = 2.94us
1001b = 3.99us
1010b = 4.97us
1011b = 5.95us
1100b = 7.98us
1101b = 9.94us
1110b = 11.97us
1111b = 15.96us
3 STC_ERR R/W 0h STC loop error limit for half-bridge 1 and 2
0b = 1-bit error
1b = Actual error
2-1 KP_STC R/W 3h STC proportional controller gain setting for half-bridge 1 and 2.
00b = 1
01b = 2
10b = 3
11b = 4
0 EN_STC R/W 0h Enable STC loop control for half-bridge 1 and 2.
ADVANCE INFORMATION
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
01b = 5µs
10b = 10µs
11b = 20µs
9-8 OUT5_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 5.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
7-6 OUT4_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 4.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
5-4 OUT3_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 3.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
3-2 OUT2_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 2.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
1-0 OUT1_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 1.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
ADVANCE INFORMATION
13 NSR_OUT5_DIS R/W 0h Disables non-synchronous rectification during ITRIP regulation (sets
active freewheeling) for half-bridge 5.
Passive freewheeling = 0b
Active freewheeling = 1b
12 NSR_OUT4_DIS R/W 0h Disables non-synchronous rectification during ITRIP regulation (sets
active freewheeling) for half-bridge 4.
Passive freewheeling = 0b
Active freewheeling = 1b
11 NSR_OUT3_DIS R/W 0h Disables non-synchronous rectification during ITRIP regulation (sets
active freewheeling) for half-bridges 3.
Passive freewheeling = 0b
Active freewheeling = 1b
10 NSR_OUT2_DIS R/W 0h Disables non-synchronous rectification during ITRIP regulation (sets
active freewheeling) for half-bridge 2.
Passive freewheeling = 0b
Active freewheeling = 1b
9 NSR_OUT1_DIS R/W 0h Disables non-synchronous rectification during ITRIP regulation (sets
active freewheeling) for half-bridge 1.
Passive freewheeling = 0b
Active freewheeling = 1b
8 IPROPI_SH_EN R/W 0h Enables IPROPI sample and hold circuit.
7 RSVD_7 R/W 0h Reserved.
6 RSVD_6 R/W 0h Reserved.
5-3 OUT6_CNFG R/W 0h Configuration for half-bridge 6.
Enables or disables control of half-bridge, and sets control mode
between PWM or SPI.
000b = Disabled
001b = Enabled (SPI register control)
010b = PWM1 Complementary Control
011b = PWM1 LS Control
100b = PWM1 HS Control
101b = PWM2 Complementary Control
110b = PWM2 PWM LS Control
111b = PWM2 HS Control
2-0 OUT5_CNFG R/W 0h Configuration for half-bridge 5.
Enables or disables control of half-bridge, and sets control mode
between PWM or SPI.
000b = Disabled
001b = Enabled (SPI register control)
010b = PWM1 Complementary Control
011b = PWM1 LS Control
100b = PWM1 HS Control
101b = PWM2 Complementary Control
110b = PWM2 PWM LS Control
111b = PWM2 HS Control
ADVANCE INFORMATION
01b = 10µs
10b = 20µs
11b = 60µs
9-8 OUT5_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 5.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
7-6 OUT4_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 4.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
5-4 OUT3_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 3.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
3-2 OUT2_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 2.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
1-0 OUT1_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 1.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
ADVANCE INFORMATION
10 RSVD_10 R/W 0h Reserved.
9 RSVD_9 R/W 0h Reserved.
8 RSVD_8 R/W 0h Reserved.
7 RSVD_7 R/W 0h Reserved.
6 RSVD_6 R/W 0h Reserved.
5 OUT6_OLA_TH R/W 0h Sets the half-bridge 6 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
4 OUT5_OLA_TH R/W 0h Sets the half-bridge 5 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
3 OUT4_OLA_TH R/W 0h Sets the half-bridge 4 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
2 OUT3_OLA_TH R/W 0h Sets the half-bridge 3 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
1 OUT2_OLA_TH R/W 0h Sets the half-bridge 2 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
0 OUT1_OLA_TH R/W 0h Sets the half-bridge 1 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
01b = 10V/µs
10b = 20V/µs
9-8 OUT5_SR R/W 0h Configures slew rate for half-bridge 5.
00b = 1.6V/µs
01b = 10V/µs
10b = 20V/µs
7-6 OUT4_SR R/W 0h Configures slew rate for half-bridge 4.
00b = 1.6V/µs
01b = 10V/µs
10b = 20V/µs
5-4 OUT3_SR R/W 0h Configures slew rate for half-bridge 3.
00b = 1.6V/µs
01b = 10V/µs
10b = 20V/µs
3-2 OUT2_SR R/W 0h Configures slew rate for half-bridge 2.
00b = 1.6V/µs
01b = 10V/µs
10b = 20V/µs
1-0 OUT1_SR R/W 0h Configures slew rate for half-bridge 1.
00b = 1.6V/µs
01b = 10V/µs
10b = 20V/µs
ADVANCE INFORMATION
11 OUT2_ITRIP_EN R/W 0h Enables ITRIP regulation for half-bridge 2.
10 OUT1_ITRIP_EN R/W 0h Enables ITRIP regulation for half-bridge 1.
9-8 OUT6_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 6.
00b = 2.25A
01b = 5.5A
10b = 6.25A
11b = Reserved.
7-6 OUT5_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 5.
00b = 2.75A
01b = 6.5A
10b = 7.5A
11b = Reserved.
5-4 OUT4_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 4.
00b = 1.25A
01b = 2.75A
10b = 3.5A
11b = Reserved.
3-2 OUT3_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 3.
00b = 1.25A
01b = 2.5A
10b = 3.5A
11b = Reserved.
1 OUT2_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 2.
0b = 0.7A
1b = 0.875A
0 OUT1_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 1.
0b = 0.7A
1b = 0.875A
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
9-8 OUT5_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 5.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
7-6 OUT4_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 4.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
5-4 OUT3_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 3.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
3-2 OUT2_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 2.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
1-0 OUT1_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 1.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
ADVANCE INFORMATION
13 RSVD_13 R/W 0h Reserved.
12 RSVD_12 R/W 0h Reserved.
11-10 OUT12_CNFG R/W 0h Configuration for high-side driver 12.
Enables or disables control of high-side driver, and sets control mode
between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
9-8 OUT11_CNFG R/W 0h Configuration for high-side driver 11.
Enables or disables control of high-side driver, and sets control mode
between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
7-6 OUT10_CNFG R/W 0h Configuration for high-side driver 10.
Enables or disables control of high-side driver, and sets control mode
between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
5-4 OUT9_CNFG R/W 0h Configuration for high-side driver 9.
Enables or disables control of high-side driver, and sets control mode
between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
3-2 OUT8_CNFG R/W 0h Configuration for high-side driver 8.
Enables or disables control of high-side driver, and sets control mode
between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
1-0 OUT7_CNFG R/W 0h Configuration for high-side driver 7.
Enables or disables control of high-side driver, and sets control mode
between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
OUT11_CNFG mode = 0b
EC mode = 1b
11 RSVD_12 R/W 0h Reserved.
10 RSVD_11 R/W 0h Reserved.
9 RSVD_10 R/W 0h Reserved.
8 RSVD_9 R/W 0h Reserved.
7 RSVD_8 R/W 0h Reserved.
6 RSVD_6 R/W 0h Reserved.
5 OUT12_OC_TH R/W 0h Configures overcurrent threshold between high or low for high-side
driver 12.
0b = Low current threshold
1b = High current threshold
4 OUT11_OC_TH R/W 0h Configures overcurrent threshold between high or low for high-side
driver 11.
0b = Low current threshold
1b = High current threshold
3 OUT10_OC_TH R/W 0h Configures overcurrent threshold between high or low for high-side
driver 10.
0b = Low current threshold
1b = High current threshold
2 OUT9_OC_TH R/W 0h Configures overcurrent threshold between high or low for high-side
driver 9.
0b = Low current threshold
1b = High current threshold
1 OUT8_OC_TH R/W 0h Configures overcurrent threshold between high or low for high-side
driver 8.
0b = Low current threshold
1b = High current threshold
0 OUT7_RDSON_MODE R/W 0h Configures high-side driver 7 between high RDSON mode and low
RDSON mode (for bulb/lamp load).
0b = High RDSON mode (LED driver mode)
1b = Low RDSON mode (bulb/lamp driver mode)
ADVANCE INFORMATION
0b = Low threshold
1b = High threshold
11 OUT10_OLA_TH R/W 0h Configures high-side driver 10 open load threshold.
0b = Low threshold
1b = High threshold
10 OUT9_OLA_TH R/W 0h Configures high-side driver 9 open load threshold.
0b = Low threshold
1b = High threshold
9 OUT8_OLA_TH R/W 0h Configures high-side driver 8 open load threshold.
0b = Low threshold
1b = High threshold
8 OUT7_OLA_TH R/W 0h Configures high-side driver 7 open load threshold.
0b = Low threshold
1b = High threshold
7 RSVD_7 R/W 0h Reserved.
6 RSVD_6 R/W 0h Reserved.
5 OUT12_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 12.
4 OUT11_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 11.
3 OUT10_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 10.
2 OUT9_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 9.
1 OUT8_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 8.
0 OUT7_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 7.
10 OUT7_OCP_DIS R/W 0h Disables second current limit of 2.5A on OUT7 in low RDSON mode.
0b = OUT7 OCP enable
1b = OUT7 OCP disable
9-8 ITRIP_TO_SEL R/W 0h Selects the timeout limit for OUT7 ITRIP regulation.
00b = 100ms
01b = 200ms
10b = 400ms
11b = 800ms
7-6 OUT7_ITRIP_CNFG R/W 0h Configures OUT7 ITRIP behavior, fault clearing and latching.
00b = ITRIP fault report only
01b = ITRIP regulation with timeout and driver disable
10b = ITRIP regulation always
11b = ITRIP regulation with timeout and regulation disable
5-4 OUT7_ITRIP_BLK R/W 0h Configures OUT7 ITRIP blanking time.
00b = Reserved.
01b = 0µs
10b = 20µs
11b = 40µs
3-2 OUT7_ITRIP_FREQ R/W 0h Configures OUT7 ITRIP regulation frequency.
00b = 1.7kHz
01b = 2.2kHz
10b = 3kHz
11b = 4.4kHz
1-0 OUT7_ITRIP_DG R/W 0h Configures OUT7 ITRIP deglitch time.
00b = 48µs
01b = 40µs
10b = 32µs
11b = 24µs
ADVANCE INFORMATION
12 OUT11_CCM_TO R/W 0h Configures the constant current mode timing and current limit option
of high-side output 11.
200mA for 20ms = 0b
390mA for 10ms = 1b
11 OUT10_CCM_TO R/W 0h Configures the constant current mode timing and current limit option
of high-side output 10.
200mA for 20ms = 0b
390mA for 10ms = 1b
10 OUT9_CCM_TO R/W 0h Configures the constant current mode timing and current limit option
of high-side output 9.
200mA for 20ms = 0b
390mA for 10ms = 1b
9 OUT8_CCM_TO R/W 0h Configures the constant current mode timing and current limit option
of high-side output 8.
200mA for 20ms = 0b
390mA for 10ms = 1b
8 OUT7_CCM_TO R/W 0h Configures the constant current mode timing and current limit option
of high-side output 7.
200mA for 20ms = 0b
390mA for 10ms = 1b
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 OUT12_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 12.
4 OUT11_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 11.
3 OUT10_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 10.
2 OUT9_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 9.
1 OUT8_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 8.
0 OUT7_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 7.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
9-8 PWM_OUT11_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 11.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
7-6 PWM_OUT10_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 10.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
5-4 PWM_OUT9_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 9.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
3-2 PWM_OUT8_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 8.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
1-0 PWM_OUT7_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 7.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
ADVANCE INFORMATION
00001b = 0.08V
0010b = 0.10V
0011b = 0.12V
0100b = 0.14V
0101b = 0.16V
0110b = 0.18V
0111b = 0.2V
1000b = 0.24V
1001b = 0.28V
1010b = 0.32V
1011b = 0.36V
1100b = 0.4V
1101b = 0.44V
1110b = 0.56V
1111b = 1V
7-6 HEAT_VDS_MODE R/W 0h Heater MOSFET VDS overcurrent monitor fault mode.
00b = Latched fault.
01b = Cycle by cycle.
10b = Warning report only.
11b = Disabled.
5-4 HEAT_VDS_BLK R/W 3h Heater MOSFET VDS monitor blanking time.
00b = 4µs
01b = 8µs
10b = 16µs
11b = 32µs
3-2 HEAT_VDS_DG R/W 3h Heater MOSFET VDS overcurrent monitor deglitch time.
00b = 1µs
01b = 2µs
10b = 4µs
11b = 8µs
1 HEAT_OLP_EN R/W 0h Enables heater offline open load detection circuit.
0 RESERVED R 0h Reserved
ADVANCE INFORMATION
01b = 10µs
10b = 20µs
11b = 60µs
9-8 OUT11_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 11.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
7-6 OUT10_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 10.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
5-4 OUT9_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 9.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
3-2 OUT8_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 8.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
1-0 OUT7_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 7.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
ADVANCE INFORMATION
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
10 RESERVED R 0h Reserved
9 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
ADVANCE INFORMATION
30h OUT11_PWM_DC OUT11 PWM Duty cycle control register. Section 8.3.8
31h OUT12_PWM_DC OUT12 PWM Duty cycle control register. Section 8.3.9
Complex bit access types are encoded to fit into small table cells. Table 8-49 shows the codes that are used for
access types in this section.
Table 8-49. DRV8000-Q1_CTRL Access Type Codes
Access Type Code Description
Read Type
R R Read
Write Type
W W Write
Reset or Default Value
-n Value after reset or the default
value
ADVANCE INFORMATION
0b = Outputs follow IN1/EN signal.
1b = Gate drivers pull-downs are enabled.
Half-bridge 1 Hi-Z
13 S_IN2 R/W 0h Control bit for IN1 input signal.
Enabled through IN1_MODE bit.
12 S_IN1 R/W 0h Control bit for IN2 input signal.
Enabled through IN2_MODE bit.
11-10 OUT6_CTRL R/W 0h Integrated half-bridge output 6 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
9-8 OUT5_CTRL R/W 0h Integrated half-bridge output 5 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
7-6 OUT4_CTRL R/W 0h Integrated half-bridge output 4 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
5-4 OUT3_CTRL R/W 0h Integrated half-bridge output 3 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
3-2 OUT2_CTRL R/W 0h Integrated half-bridge output 2 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
1-0 OUT1_CTRL R/W 0h Integrated half-bridge output 1 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
ADVANCE INFORMATION
10 RESERVED R 0h Reserved
9-0 OUT7_DC R/W 0h 10-bit resolution control of Duty Cycle for dedicated PWM generator
for high-side driver 7.
10 RESERVED R 0h Reserved
9-0 OUT8_DC R/W 0h 10-bit resolution control of Duty Cycle for dedicated PWM generator
for high-side driver 8.
ADVANCE INFORMATION
10 RESERVED R 0h Reserved
9-0 OUT9_DC R/W 0h 10-bit resolution control of Duty Cycle for dedicated PWM generator
for high-side driver 9.
10 RESERVED R 0h Reserved
9-0 OUT10_DC R/W 0h 10-bit resolution control of Duty Cycle for dedicated PWM generator
for high-side driver 10.
ADVANCE INFORMATION
10 RESERVED R 0h Reserved
9-0 OUT11_DC R/W 0h 10-bit resolution control of Duty Cycle for dedicated PWM generator
for high-side driver 11.
10 RESERVED R 0h Reserved
9-0 OUT12_DC R/W 0h 10-bit resolution control of Duty Cycle for dedicated PWM generator
for high-side driver 12.
ADVANCE INFORMATION
6h HS_STAT Section 8.4.7
7h SPARE_STAT1 Section 8.4.8
8h SPARE_STAT2 Section 8.4.9
Complex bit access types are encoded to fit into small table cells. Table 8-60 shows the codes that are used for
access types in this section.
Table 8-60. DRV8001-Q1_STATUS Access Type
Codes
Access Type Code Description
Read Type
R R Read
Reset or Default Value
-n Value after reset or the default
value
0b = No fault.
1b = Fault detected.
12 WARN R 0h General warning indicator. Indicates a warning is present.
0b = No warning.
1b = Warning is present.
11 GD R 0h Logic OR of VDS and VGS fault indicators for gate driver.
10 HB R 0h Logic OR of overcurrent and open load fault indicators for half-
bridges.
9 EC_HEAT R 0h Logic OR of EC OV/UV, overcurrent, open load fault indicators for
EC and heater.
8 HS R 0h Logic OR of overcurrent and open load fault indicators for high-side
drivers.
7 PVDD_UV R 0h Indicates undervoltage fault on PVDD pin.
6 PVDD_OV R 0h Indicates overvoltage fault on PVDD pin.
5 VCP_UV R 0h Indicates undervoltage fault on VCP pin.
4 OTW R 0h Indicates overtemperature warning.
3 OTSD R 0h Indicates overtemperature shutdown
2 WD_FLT R 0h Indicates watchdog timer fault.
1 ITRIP R 0h Indicates ITRIP regulation warning when any OUTx entered ITRIP.
0 OUT7_ITRIP_TO R 0h Indicates OUT7 ITRIP timeout has occurred when set.
ADVANCE INFORMATION
9 ZONE2_OTSD R 0h Indicates overtemperature shutdown has occurred in zone 2.
8 ZONE1_OTSD R 0h Indicates overtemperature shutdown has occurred in zone 1.
7 ZONE4_OTW_H R 0h Indicates high temperature warning (above 125°C) has occurred in
zone 4.
6 ZONE3_OTW_H R 0h Indicates high temperature warning (above 125°C) has occurred in
zone 3.
5 ZONE2_OTW_H R 0h Indicates high temperature warning (above 125°C) has occurred in
zone 2.
4 ZONE1_OTW_H R 0h Indicates high temperature warning (above 125°C) has occurred in
zone 1.
3 ZONE4_OTW_L R 0h Indicates low temperature warning (above 105°C) has occurred in
zone 4.
2 ZONE3_OTW_L R 0h Indicates low temperature warning (above 105°C) has occurred in
zone 3.
1 ZONE2_OTW_L R 0h Indicates low temperature warning (above 105°C) has occurred in
zone 2.
0 ZONE1_OTW_L R 0h Indicates low temperature warning (above 105°C) has occurred in
zone 1.
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
ADVANCE INFORMATION
8 OUT1_LS_OCP R 0h Indicates overcurrent fault on low-side of half-bridge OUT1.
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 OUT6_HS_OCP R 0h Indicates overcurrent fault on high-side of half-bridge OUT6.
4 OUT5_HS_OCP R 0h Indicates overcurrent fault on high-side of half-bridge OUT5.
3 OUT4_HS_OCP R 0h Indicates overcurrent fault on high-side of half-bridge OUT4.
2 OUT3_HS_OCP R 0h Indicates overcurrent fault on high-side of half-bridge OUT3.
1 OUT2_HS_OCP R 0h Indicates overcurrent fault on high-side of half-bridge OUT2.
0 OUT1_HS_OCP R 0h Indicates overcurrent fault on high-side of half-bridge OUT1.
8 HB_OLP_STAT R 0h Indicates off-state open load fault on the selected half-bridge output
per HB_OLP_CNFG bits (OUTX or OUTY).
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 OUT6_OLA R 0h Indicates active open load fault on half-bridge OUT6.
4 OUT5_OLA R 0h Indicates active open load fault on half-bridge OUT5.
3 OUT4_OLA R 0h Indicates active open load fault on half-bridge OUT4.
2 OUT3_OLA R 0h Indicates active open load fault on half-bridge OUT3.
1 OUT2_OLA R 0h Indicates active open load fault on half-bridge OUT2.
0 OUT1_OLA R 0h Indicates active open load fault on half-bridge OUT1.
ADVANCE INFORMATION
8 HEAT_VDS R 0h Indicates overcurrent fault on heater MOSFET.
7 OUT7_ITRIP_TO R 0h Indicates ITRIP timeout occurred on OUT7.
6 OUT7_ITRIP_STAT R 0h Indicates ITRIP regulation warning on OUT7.
5 OUT6_ITRIP_STAT R 0h Indicates ITRIP regulation warning on OUT6.
4 OUT5_ITRIP_STAT R 0h Indicates ITRIP regulation warning on OUT5.
3 OUT4_ITRIP_STAT R 0h Indicates ITRIP regulation warning on OUT4.
2 OUT3_ITRIP_STAT R 0h Indicates ITRIP regulation warning on OUT3.
1 OUT2_ITRIP_STAT R 0h Indicates ITRIP regulation warning on OUT2.
0 OUT1_ITRIP_STAT R 0h Indicates ITRIP regulation warning on OUT1.
ADVANCE INFORMATION
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 DEVICE_ID_7 R 0h Device ID bit field 7.
6 DEVICE_ID_6 R 0h Device ID bit field 6.
5 DEVICE_ID_5 R 0h Device ID bit field 5.
4 DEVICE_ID_4 R 0h Device ID bit field 4.
3 DEVICE_ID_3 R 0h Device ID bit field 3.
2 DEVICE_ID_2 R 0h Device ID bit field 2.
1 DEVICE_ID_1 R 0h Device ID bit field 1.
0 DEVICE_ID_0 R 1h Device ID bit field 0. DRV8001-Q1 address is 0x11.
ADVANCE INFORMATION
Fh RSVD_REG_F Section 8.5.7
10h RSVD_REG_10 Section 8.5.8
11h RSVD_REG_11 Section 8.5.9
12h RSVD_REG_12 Section 8.5.10
13h RSVD_REG_13 Section 8.5.11
14h HB_ITRIP_DG Section 8.5.12
15h HB_OUT_CNFG1 Section 8.5.13
16h HB_OUT_CNFG2 Section 8.5.14
17h HB_OCP_CNFG Section 8.5.15
18h HB_OL_CNFG1 Section 8.5.16
19h HB_OL_CNFG2 Section 8.5.17
1Ah HB_SR_CNFG Section 8.5.18
1Bh HB_ITRIP_CNFG Section 8.5.19
1Ch HB_ITRIP_FREQ Section 8.5.20
1Dh HS_HEAT_OUT_CNFG Section 8.5.21
1Eh HS_OC_CNFG Section 8.5.22
1Fh HS_OL_CNFG Section 8.5.23
20h HS_REG_CNFG1 Section 8.5.24
21h HS_REG_CNFG2 Section 8.5.25
22h HS_PWM_FREQ_CNFG Section 8.5.26
23h HEAT_CNFG Section 8.5.27
24h EC_CNFG Section 8.5.28
25h HS_OCP_DG Section 8.5.29
26h SPARE_CNFG2 Section 8.5.30
27h SPARE_CNFG3 Section 8.5.31
28h SPARE_CNFG4 Section 8.5.32
Complex bit access types are encoded to fit into small table cells. Table 8-71 shows the codes that are used for
access types in this section.
Table 8-71. DRV8001-Q1_CNFG Access Type Codes
Access Type Code Description
Read Type
R R Read
Write Type
ADVANCE INFORMATION
13-12 PVDD_OV_MODE R/W 0h PVDD supply overvoltage monitor mode.
00b = Latched fault.
01b = Automatic recovery.
10b = Warning report only.
11b = Disabled.
11-10 PVDD_OV_DG R/W 0h PVDD supply overvoltage monitor deglitch time.
00b = 1µs
01b = 2µs
10b = 4µs
11b = 8µs
9 PVDD_OV_LVL R/W 0h PVDD supply overvoltage monitor threshold.
0b = 21.5V
1b = 28.5V
8 VCP_UV_LVL R/W 0h VCP charge pump undervoltage monitor threshold.
0b = 4.75V
1b = 6.25V
7-6 CP_MODE R/W 0h Charge pump operating mode.
00b = Automatic switch between tripler and doubler mode.
01b = Always doubler mode.
10b = Always tripler mode.
11b = RSVD
5 VCP_UV_MODE R/W 0h VCP charge pump undervoltage monitor mode.
0b = Latched fault.
1b = Automatic recovery.
4 PVDD_UV_MODE R/W 0h PVDD supply undervoltage monitor mode.
0b = Latched fault.
1b = Automatic recovery.
3 WD_EN R/W 0h Watchdog timer enable.
0b = Watchdog timer disabled.
1b = Watchdog dog timer enabled.
2 WD_FLT_M R/W 0h Watchdog fault mode. Watchdog fault is cleared by CLR_FLT.
0b = Watchdog fault is reported to WD_FLT and WARN register bits.
Drivers remain enabled and FAULT bit is not asserted.
1b = Watchdog fault is reported to WD_FLT and FAULT register bits.
All drivers are disabled in response to watchdog fault.
1 WD_WIN R/W 1h Watchdog timer window.
0b = 4 to 40ms
1b = 10 to 100ms
0 EN_SSC R/W 0h Spread spectrum clocking.
0b = Disabled.
1b = Enabled.
ADVANCE INFORMATION
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
ADVANCE INFORMATION
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
ADVANCE INFORMATION
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
ADVANCE INFORMATION
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
ADVANCE INFORMATION
8 RESERVED R 0h Reserved
7 RESERVED R 0h Reserved
6 RESERVED R 0h Reserved
5 RESERVED R 0h Reserved
4 RESERVED R 0h Reserved
3 RESERVED R 0h Reserved
2 RESERVED R 0h Reserved
1 RESERVED R 0h Reserved
0 RESERVED R 0h Reserved
11b = 20µs
9-8 OUT5_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 5.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
7-6 OUT4_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 4.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
5-4 OUT3_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 3.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
3-2 OUT2_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 2.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
1-0 OUT1_ITRIP_DG R/W 0h Configures ITRIP deglitch time for half-bridge 1.
00b = 2µs
01b = 5µs
10b = 10µs
11b = 20µs
ADVANCE INFORMATION
Active freewheeling = 1b
12 NSR_OUT4_DIS R/W 0h Disables non-synchronous rectification during ITRIP regulation (sets
active freewheeling) for half-bridge 4.
Passive freewheeling = 0b
Active freewheeling = 1b
11 NSR_OUT3_DIS R/W 0h Disables non-synchronous rectification during ITRIP regulation (sets
active freewheeling) for half-bridges 3.
Passive freewheeling = 0b
Active freewheeling = 1b
10 NSR_OUT2_DIS R/W 0h Disables non-synchronous rectification during ITRIP regulation (sets
active freewheeling) for half-bridge 2.
Passive freewheeling = 0b
Active freewheeling = 1b
9 NSR_OUT1_DIS R/W 0h Disables non-synchronous rectification during ITRIP regulation (sets
active freewheeling) for half-bridge 1.
Passive freewheeling = 0b
Active freewheeling = 1b
8 IPROPI_SH_EN R/W 0h Enables IPROPI sample and hold circuit.
7 RSVD_7 R/W 0h Reserved.
6 RSVD_6 R/W 0h Reserved.
5-3 OUT6_CNFG R/W 0h Configuration for half-bridge 6. Enables or disables control of half-
bridge, and sets control mode between PWM or SPI.
000b = Disabled
001b = Enabled (SPI register control)
010b = PWM1 Complementary Control
011b = PWM1 LS Control
100b = PWM1 HS Control
101b = PWM2 Complementary Control
110b = PWM2 PWM LS Control
111b = PWM2 HS Control
2-0 OUT5_CNFG R/W 0h Configuration for half-bridge 5. Enables or disables control of half-
bridge, and sets control mode between PWM or SPI.
000b = Disabled
001b = Enabled (SPI register control)
010b = PWM1 Complementary Control
011b = PWM1 LS Control
100b = PWM1 HS Control
101b = PWM2 Complementary Control
110b = PWM2 PWM LS Control
111b = PWM2 HS Control
ADVANCE INFORMATION
10b = 20µs
11b = 60µs
9-8 OUT5_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 5.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
7-6 OUT4_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 4.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
5-4 OUT3_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 3.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
3-2 OUT2_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 2.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
1-0 OUT1_OCP_DG R/W 0h Overcurrent deglitch time for half-bridge 1.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
ADVANCE INFORMATION
8 RSVD_8 R/W 0h Reserved.
7 RSVD_7 R/W 0h Reserved.
6 RSVD_6 R/W 0h Reserved.
5 OUT6_OLA_TH R/W 0h Sets the half-bridge 6 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
4 OUT5_OLA_TH R/W 0h Sets the half-bridge 5 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
3 OUT4_OLA_TH R/W 0h Sets the half-bridge 4 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
2 OUT3_OLA_TH R/W 0h Sets the half-bridge 3 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
1 OUT2_OLA_TH R/W 0h Sets the half-bridge 2 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
0 OUT1_OLA_TH R/W 0h Sets the half-bridge 1 active open load cycle count threshold.
0b = 32 cycles
1b = 128 cycles
ADVANCE INFORMATION
00b = 2.25A
01b = 5.5A
10b = 6.25A
11b = Reserved.
7-6 OUT5_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 5.
00b = 2.75A
01b = 6.5A
10b = 7.5A
11b = Reserved.
5-4 OUT4_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 4.
00b = 1.25A
01b = 2.75A
10b = 3.5A
11b = Reserved.
3-2 OUT3_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 3.
00b = 1.25A
01b = 2.5A
10b = 3.5A
11b = Reserved.
1 OUT2_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 2.
0b = 0.7A
1b = 0.875A
0 OUT1_ITRIP_LVL R/W 0h Configures ITRIP current threshold for half-bridge 1.
0b = 0.7A
1b = 0.875A
11b = 2.5kHz
9-8 OUT5_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 5.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
7-6 OUT4_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 4.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
5-4 OUT3_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 3.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
3-2 OUT2_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 2.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
1-0 OUT1_ITRIP_FREQ R/W 0h Configures ITRIP regulation frequency for half-bridge 1.
00b = 20kHz
01b = 10kHz
10b = 5kHz
11b = 2.5kHz
ADVANCE INFORMATION
11-10 OUT12_CNFG R/W 0h Configuration for high-side driver 12. Enables or disables control of
high-side driver, and sets control mode between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
9-8 OUT11_CNFG R/W 0h Configuration for high-side driver 11. Enables or disables control of
high-side driver, and sets control mode between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
7-6 OUT10_CNFG R/W 0h Configuration for high-side driver 10. Enables or disables control of
high-side driver, and sets control mode between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
5-4 OUT9_CNFG R/W 0h Configuration for high-side driver 9. Enables or disables control of
high-side driver, and sets control mode between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
3-2 OUT8_CNFG R/W 0h Configuration for high-side driver 8. Enables or disables control of
high-side driver, and sets control mode between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
1-0 OUT7_CNFG R/W 0h Configuration for high-side driver 7. Enables or disables control of
high-side driver, and sets control mode between PWM or SPI.
00b = Disabled
01b = SPI control enabled
10b = PWM pin control
11b = PWM Generator
ADVANCE INFORMATION
11 OUT10_OLA_TH R/W 0h Configures high-side driver 10 open load threshold.
0b = Low threshold
1b = High threshold
10 OUT9_OLA_TH R/W 0h Configures high-side driver 9 open load threshold.
0b = Low threshold
1b = High threshold
9 OUT8_OLA_TH R/W 0h Configures high-side driver 8 open load threshold.
0b = Low threshold
1b = High threshold
8 OUT7_OLA_TH R/W 0h Configures high-side driver 7 open load threshold.
0b = Low threshold
1b = High threshold
7 RSVD_7 R/W 0h Reserved.
6 RSVD_6 R/W 0h Reserved.
5 OUT12_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 12.
4 OUT11_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 11.
3 OUT10_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 10.
2 OUT9_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 9.
1 OUT8_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 8.
0 OUT7_OLA_EN R/W 0h Enables open load detection circuit for high-side driver 7.
ADVANCE INFORMATION
100mA for 20ms = 0b
200mA for 10ms = 1b
11 OUT10_CCM_TO R/W 0h Configures the constant current mode timing and current limit option
of high-side output 10.
100mA for 20ms = 0b
200mA for 10ms = 1b
10 OUT9_CCM_TO R/W 0h Configures the constant current mode timing and current limit option
of high-side output 9.
100mA for 20ms = 0b
200mA for 10ms = 1b
9 OUT8_CCM_TO R/W 0h Configures the constant current mode timing and current limit option
of high-side output 8.
100mA for 20ms = 0b
200mA for 10ms = 1b
8 OUT7_CCM_TO R/W 0h Configures the constant current mode timing and current limit option
of high-side output 7.
100mA for 20ms = 0b
200mA for 10ms = 1b
7 RESERVED R/W 0h Reserved
6 RESERVED R/W 0h Reserved
5 OUT12_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 12.
4 OUT11_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 11.
3 OUT10_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 10.
2 OUT9_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 9.
1 OUT8_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 8.
0 OUT7_CCM_EN R/W 0h Enables constant current mode circuit for high-side driver 7.
10b = 289Hz
11b = Reserved
9-8 PWM_OUT11_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 11.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
7-6 PWM_OUT10_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 10.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
5-4 PWM_OUT9_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 9.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
3-2 PWM_OUT8_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 8.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
1-0 PWM_OUT7_FREQ R/W 0h Configures frequency output of dedicated PWM generator for high-
side driver 7.
00b = 108Hz
01b = 217Hz
10b = 289Hz
11b = Reserved
ADVANCE INFORMATION
0010b = 0.10V
0011b = 0.12V
0100b = 0.14V
0101b = 0.16V
0110b = 0.18V
0111b = 0.2V
1000b = 0.24V
1001b = 0.28V
1010b = 0.32V
1011b = 0.36V
1100b = 0.4V
1101b = 0.44V
1110b = 0.56V
1111b = 1V
7-6 HEAT_VDS_MODE R/W 0h Heater MOSFET VDS overcurrent monitor fault mode.
00b = Latched fault.
01b = Cycle by cycle.
10b = Warning report only.
11b = Disabled.
5-4 HEAT_VDS_BLK R/W 3h Heater MOSFET VDS monitor blanking time.
00b = 4µs
01b = 8µs
10b = 16µs
11b = 32µs
3-2 HEAT_VDS_DG R/W 3h Heater MOSFET VDS overcurrent monitor deglitch time.
00b = 1µs
01b = 2µs
10b = 4µs
11b = 8µs
1 HEAT_OLP_EN R/W 0h Enables heater offline open load detection circuit.
0 RESERVED R/W 0h Reserved
01b = 50µs
10b = 100µs
11b = 200µs
9-8 ECFB_OV_DG R/W 0h Configures overvoltage fault deglitch time.
00b = 20µs
01b = 50µs
10b = 100µs
11b = 200µs
7-6 ECFB_UV_MODE R/W 0h Configures ECFB UV fault response for EC driver.
0b = No action
01b = Report ECFB voltage < ECFB_UV_TH
10b = Report ECFB voltage < ECFB_UV_TH and disable EC driver.
5-4 ECFB_OV_MODE R/W 0h Configures ECFB OV fault response for EC driver.
0b = No action
01b = Report ECFB voltage < ECFB_OV_TH
10b = Report ECFB voltage < ECFB_OV_TH and disable EC driver.
3 EC_FLT_MODE R/W 0h Configures overcurrent fault response for EC driver.
0b = Hi-Z EC Driver
1b = Retry with OUT7 ITRIP settings
2 ECFB_LS_PWM R/W 0h Enables LS PWM discharge for EC load.
0b = No PWM discharge (Fast discharge)
1b = PWM discharge enabled
1 EC_OLEN R/W 0h Enables open load detection circuit ECFB.
0 ECFB_MAX R/W 0h Configures the maximum target voltage for EC.
0b = 1.2V
1b = 1.5V
ADVANCE INFORMATION
10b = 20µs
11b = 60µs
9-8 OUT11_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 11.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
7-6 OUT10_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 10.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
5-4 OUT9_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 9.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
3-2 OUT8_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 8.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
1-0 OUT7_OCP_DG R/W 0h Overcurrent deglitch time for high-side driver 7.
00b = 6µs
01b = 10µs
10b = 20µs
11b = 60µs
ADVANCE INFORMATION
8 RESERVED R/W 0h Reserved
7 RESERVED R/W 0h Reserved
6 RESERVED R/W 0h Reserved
5 RESERVED R/W 0h Reserved
4 RESERVED R/W 0h Reserved
3 RESERVED R/W 0h Reserved
2 RESERVED R/W 0h Reserved
1 RESERVED R/W 0h Reserved
0 RESERVED R/W 0h Reserved
ADVANCE INFORMATION
2Fh OUT10_PWM_DC Section 8.6.7
30h OUT11_PWM_DC Section 8.6.8
31h OUT12_PWM_DC Section 8.6.9
Complex bit access types are encoded to fit into small table cells. Table 8-105 shows the codes that are used for
access types in this section.
Table 8-105. DRV8001-Q1_CTRL Access Type Codes
Access Type Code Description
Read Type
R R Read
Write Type
W W Write
Reset or Default Value
-n Value after reset or the default
value
ADVANCE INFORMATION
10b = LS ON
11b = RSVD
9-8 OUT5_CTRL R/W 0h Integrated half-bridge output 5 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
7-6 OUT4_CTRL R/W 0h Integrated half-bridge output 4 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
5-4 OUT3_CTRL R/W 0h Integrated half-bridge output 3 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
3-2 OUT2_CTRL R/W 0h Integrated half-bridge output 2 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
1-0 OUT1_CTRL R/W 0h Integrated half-bridge output 1 control.
00b = OFF
01b = HS ON
10b = LS ON
11b = RSVD
ADVANCE INFORMATION
for high-side driver 7.
ADVANCE INFORMATION
for high-side driver 9.
ADVANCE INFORMATION
for high-side driver 11.
ADVANCE INFORMATION
9.2 Typical Application
The typical application for the DRV8001-Q1 is to control multiple loads in a typical automotive door. These
include multiple integrated half-bridges and high-side drivers, an electrochromic mirror driver and external high-
side MOSFET driver for a heating element. A high-level schematic example is shown in DRV8001-Q1 Typical
Application below.
DRV8001-Q1
GP-O nSLEEP
PWM PWM1 X
PWM PWM2 OUT2 M Fold
M
ADC IPROPI/PWM2 Y
OUT3 M
RIPROPI
Lock
OUT4 M
OUT5
Safe Lock
OUT6 M
PGNDx (1,2)
Lamp/LED
OUT7
OUT8
OUT9
OUT10
OUT12
LED
VPVDD
Heater
RGH_HS
GH_HS
SH_HS
Heater
EC Driver
**
OUT11
RECDRV
ECDRV
CECDRV
ECFB
EC Glass **Recommended
PAD protection in
CECFB case of inductive
short
ADVANCE INFORMATION
• The motor start-up and braking methods
The inductance between the power supply and motor drive system can limit the current rate from the power
supply. If the local bulk capacitance is too small, the system responds to excessive current demands or dumps
from the motor with a change in voltage. When adequate bulk capacitance is used, the motor voltage remains
stable and high current can be quickly supplied.
The data sheet provides a recommended minimum value, but system level testing is required to determine the
appropriate sized bulk capacitor.
Parasitic Wire
Inductance
Power Supply Motor Driver System
PVDD
+ +
Motor Driver
–
GND
9.5 Layout
9.5.1 Layout Guidelines
Bypass the PVDD pin to the GND pin using a low-ESR ceramic bypass capacitor CPVDD1. Place this capacitor
as close to the PVDD pin as possible with a thick trace or ground plane connected to the GND pin. Additionally,
bypass the PVDD pin using a bulk capacitor CPVDD2 rated for PVDD. This component can be electrolytic. This
capacitance must be at least 10µF. It is acceptable if this capacitance is shared with the bulk capacitance for the
external power MOSFETs.
Additional bulk capacitance is required to bypass the high current path on the external power MOSFETs of the
H-bridge driver. Place this bulk capacitance such that the length of any high current paths is minimized through
the external MOSFETs. Keep the connecting metal traces as wide as possible, with numerous vias connecting
PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high current.
For H-bridge driver external MOSFETs, bypass the drain pin to GND plane using a low-ESR ceramic bypass
capacitor with appropriate voltage rating. Place this capacitor as close to the MOSFET drain and source pins as
possible, with a thick trace or plane connection to GND plane. Place the series gate resistors as close to the
MOSFET gate pins as possible.
Bypass the DVDD pin to the DGND pin with CDVDD. Place this capacitor as close to the pin as possible and
minimize the path from the capacitor to the DGND pin. If local bypass capacitors are already present on these
power supplies in close proximity of the device to minimize noise, these additional components for DVDD are not
required.
For the EC driver, place both the CECDRV and CECFB bypass capacitors to GND as close to the respective pins as
possible.
Minimize the loop length for the high-side and low-side gate drivers. The high-side loop is from the GHx pin of
the device to the high-side power MOSFET gate, then follows the high-side MOSFET source back to the SHx
ADVANCE INFORMATION
pin. The low-side loop is from the GLx pin of the device to the low-side power MOSFET gate, then follows the
low-side MOSFET source back to the SL pin.
ADVANCE INFORMATION
Figure 9-3. DRV8001-Q1 Component Placement and Layout
The layout screen shot above shows the device component and layout relative to the device. This layout screen
shot comes from the device evaluation module. Note that all power supply decoupling capacitors, especially
smaller values, and charge pump capacitors are placed as closed to the pins as possible and are placed on the
same layer of the device. All general guidelines outlined in the previous section were followed in the evaluation
module layout design when possible.
10.5 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
11 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
DATE REVISION NOTES
March 2025 * Initial release.
PACKAGE OUTLINE
RHA0040M SCALE 2.000
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
6.1
B A
5.9
6.1
5.9
ADVANCE INFORMATION
0.1 MIN
(0.13)
SECTION A-A
A-A 30.000
TYPICAL
1.0
0.8
SEATING PLANE
0.05 2X 4.5 0.08 C
0.00
4.15 0.1
SYMM
EXPOSED (0.2) TYP
THERMAL PAD 11 20
(0.16) TYP
10
21
SYMM 41 A A
2X 4.5
36X 0.5 30
1
0.3
40X
PIN 1 ID 31 0.2
40
0.1 C A B
0.5 0.05
40X
0.3
4226110/A 07/2020
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
( 4.15)
SYMM
SEE SOLDER MASK
40 31 DETAIL
40X (0.6)
40X (0.25) 1 30
(1.14)
ADVANCE INFORMATION
36X (0.5)
41 (0.685)
SYMM
(5.8)
( 0.2) TYP
VIA
(R0.05) TYP
10 21
11 20
(0.685) (1.14)
(5.8)
EXPOSED METAL
SOLDER MASK EXPOSED SOLDER MASK
OPENING METAL OPENING
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
(1.37)
40 31
40X (0.6)
40X (0.25) 1 30
ADVANCE INFORMATION
36X (0.5)
(1.37)
SYMM 41
(5.8)
(R0.05) TYP
9X (1.17)
10 21
11 SYMM 20
9X (1.17)
(5.8)
EXPOSED PAD 41
72% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
4226110/A 07/2020
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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Packaging Information
Orderable Package Type Package Lead/Ball MSL Peak Device
Status (1) Pins Package Qty Eco Plan(2) Op Temp (°C)
Device Drawing Finish(6) Temp(3) Marking(4) (5)
DRV8001QWR PREVIEW VQFN RHA 40 2500 RoHS & Green NIPDAU Level-2-260C-1 -40 to 125 PDRV8001-Q1
HARQ1 YEAR
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
ADVANCE INFORMATION
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Reel Reel
Package Package A0 B0 K0 P1 W Pin1
Device Pins SPQ Diameter Width W1
Type Drawing (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) (mm)
DRV8001QWRHARQ1 VQFN RHA 40 2500 330.0 16.4 6.3 6.3 1.1 12 16 Q2
Width (mm)
H
W
L
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DRV8001QWRHARQ1 VQFN RHA 40 2500 367 367 35
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