SEMICONDUCTOR KTX301E

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE

GENERAL PURPOSE APPLICATION.

ULTRA HIGH SPEED SWITCHING APPLICATION.
B

B1
FEATURES
Including two(TR, Diode) devices in TESV.
(Thin Extreme Super mini type with 5pin.) 1 5 DIM MILLIMETERS

C
A _ 0.05
1.6 +
Simplify circuit design.

A1
A
A1 _ 0.05
1.0 +
2
Reduce a quantity of parts and manufacturing process.

C
B _ 0.05
1.6 +
B1 1.2+_ 0.05

D
3 4 C 0.50
EQUIVALENT CIRCUIT (TOP VIEW) D _ 0.05
0.2 +
H _ 0.05
0.5 +

5 4
Marking P P J _ 0.05
0.12 +
P 5
Type Name

H
5 4

J
Q1
D1

C hFE Rank 1. D 1
2. Q 1
3. Q 1
ANODE
EMITTER
BASE
4. Q 1 COLLECTOR
1 2 3 5. D 1 CATHODE

1 2 3

MARK SPEC TESV

KTX301E KTX301E
Type
Q1 hFE Rank : Y Q1 hFE Rank : GR

Mark CA CB

MAXIMUM RATINGS (Ta=25)

TRANSISTOR Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150
Base Current IB -30
Collector Power Dissipation PC 100
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150

DIODE D1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300
Average Forward Current IO 100
Surge Current (10mS) IFSM 2 A
Power Dissipation PD -
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150

2002. 1. 24 Revision No : 1 1/2

 KTX301E

ELECTRICAL CHARACTERISTICS (Ta=25)

TRANSISTOR Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
DC Current Gain hFE (Note) VCE=-6V, IC=-2 120 - 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=-100, IB=-10 - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1 80 - -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 4 7
Noise Figure NF VCE=-6V, IC=-0.1, f=1, Rg=10 - 1.0 10 dB
Note) hFE Classification Y(4):120~240, GR:200~400.

DIODE D1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF(1) IF=1mA - 0.60 -
Forward Voltage VF(2) IF=10mA - 0.72 - V
VF(3) IF=100mA - 0.90 1.20
Reverse Current IR VR=80V - - 0.5
Total Capacitance CT VR=0, f=1 - 0.9 3.0
Reverse Recovery Time trr IF=10 - 1.6 4.0

2002. 1. 24 Revision No : 1 2/2