FM93C46A/56A/66A
Three-wire Serial EEPROM
Datasheet
May. 2013
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 1
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Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 2
Description Packaging Type
FM93C46A/56A/66A provides 1k/2k/4k bits of serial electrically
erasable programmable read-only memory (EEPROM),
organized as 64/128/256 words of 16 bits each (when the
ORG pin is connected to VCC), and 128/256/512 words of 8
bits each (when the ORG pin is connected to ground).
The FM93C46A/56A/66A is enabled through the Chip Select
pin (CS) and accessed via a three-wire serial interface
consisting of Data Input (DI), Data Output (DO), and Serial
Clock (SK). Upon receiving a read instruction at DI, the
address is decoded and the data is clocked out serially on
the data output pin DO. The write cycle is completely
self-timed and no separate erase cycle is required before
write. The write cycle is only enabled when the part is in the
Erase/Write Enable State. When CS is brought “high”
following the initiation of a write cycle,
The DO pin outputs the Ready/ Busy status of the part.
The device is the best choice for use in many industrial
and commercial applications where low-power and
low-voltage operations are essential.
Features
z Three-wire Serial Interface
z Low-voltage and Standard-voltage Operation
1.7V～5.5V
z 2MHz (2.5V) and 1MHz (1.7V) Compatibility
z Dual organization: by word (x16) or byte (x8)
z Sequential read operation
z Programming instructions that work on: byte,
word or entire memory
z Self-timed Write Cycle (5 ms max)
z READY/ BUSY signal during programming
z High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 40 Years
z PDIP8, SOP8, TSSOP8, TDFN8, TSOT23-6L
Packages (RoHS Compliant and Halogen-free)
Absolute Maximum Ratings Pin Configurations
Operating Temperature -55°C ～ +125°C Pin Name Function
Storage Temperature -65°C ～ +150°C CS Chip Select
Voltage on Any Pin with Respect
-1.0V ～ +7.0V SK Serial Clock
to Ground
Maximum Operating Voltage 6.25V DI Serial Data Input
DC output current 5.0 mA DO Serial Data Output
*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” GND Ground
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions beyond ORG Organization Select
those indicated in the operational sections of this specification are not implied. NC No connect
Exposure to absolute maximum rating conditions for extended periods may
VCC Power Supply
affect device reliability.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 3
Figure 1 Block Diagram
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 4
Memory Organization
The FM93C46A/56A/66A memory is organized either as bytes (x8) or as words (x16). If Organization Select
(ORG) is left unconnected (or connected to VCC) the x16 organization is selected; when Organization Select
(ORG) is connected to Ground (VSS) the x8 organization is selected. When the FM93C46A/56A/66A is in
Standby mode, Organization Select (ORG) should be set either to VSS or VCC for minimum power
consumption. Any voltage between VSS and VCC applied to Organization Select (ORG) may increase the
Standby current.
Memory size versus organization
Device Number of bits Number of 8-bit bytes Number of 16-bit words
FM93C66A 4096 512 256
FM93C56A 2048 256 128
FM93C46A 1024 128 64
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FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 5
Instruction Set
The instruction set of the FM93C46A/56A/66A devices contains seven instructions, as summarized in the table
below.
z Each instruction is preceded by a rising edge on Chip Select Input (CS) with Serial Clock (SK) being held
low.
z A start bit, which is the first ‘1’ read on Serial Data Input (DI) during the rising edge of Serial Clock (SK).
z Two op-code bits, read on Serial Data Input (DI) during the rising edge of Serial Clock (SK). (Some
instructions also use the first two bits of the address to define the op-code).
z The address bits of the byte or word that is to be accessed. For the FM93C46A, the address is made up
of 6 bits for the x16 organization or 7 bits for the x8 organization. For the FM93C56A and FM93C66A,
the address is made up of 8 bits for the x16 organization or 9 bits for the x8 organization.
Device Op Address Data
Instruction SB x8 x16 Comments
Type Code (1) (2) (1) (3)
x8 x16
FM93C46A 1 10 A6-A0 A5-A0
READ FM93C56A 1 10 A8-A0 A7-A0 Read Address AN–A0
FM93C66A 1 10 A8-A0 A7-A0
FM93C46A 1 00 11XXXXX 11XXXX
EWEN FM93C56A 1 00 11XXXXXXX 11XXXXXX Write Enable
FM93C66A 1 00 11XXXXXXX 11XXXXXX
FM93C46A 1 11 A6-A0 A5-A0
ERASE FM93C56A 1 11 A8-A0 A7-A0 Clear Address AN–A0
FM93C66A 1 11 A8-A0 A7-A0
FM93C46A 1 01 A6-A0 A5-A0 D7-D0 D15-D0
WRITE FM93C56A 1 01 A8-A0 A7-A0 D7-D0 D15-D0 Write Address AN–A0
FM93C66A 1 01 A8-A0 A7-A0 D7-D0 D15-D0
FM93C46A 1 00 10XXXXX 10XXXX
ERAL FM93C56A 1 00 10XXXXXXX 10XXXXXX Clear All Addresses
FM93C66A 1 00 10XXXXXXX 10XXXXXX
FM93C46A 1 00 01XXXXX 01XXXX D7-D0 D15-D0
WRAL FM93C56A 1 00 01XXXXXXX 01XXXXXX D7-D0 D15-D0 Write All Addresses
FM93C66A 1 00 01XXXXXXX 01XXXXXX D7-D0 D15-D0
FM93C46A 1 00 00XXXXX 00XXXX
EWDS FM93C56A 1 00 00XXXXXXX 00XXXXXX Write Disable
FM93C66A 1 00 00XXXXXXX 00XXXXXX
Note:
1. X = Don't Care bit.
2. Address bit A8 is not decoded by the FM93C56A.
3. Address bit A7 is not decoded by the FM93C56A.
Functional Description
The FM93C46A/56A/66A is accessed via a simple and versatile three-wire serial communication interface.
Device operation is controlled by seven instructions issued by the host processor. A valid instruction starts
with a rising edge of CS and consists of a start bit (logic “1”) followed by the appropriate op code and the
desired memory address location.
READ (READ): The Read (READ) instruction contains the address code for the memory location to be read.
After the instruction and address are decoded, data from the selected memory location is available at the
serial output pin DO. Output data changes are synchronized with the rising edges of serial clock (SK).. It
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 6
should be noted that a dummy bit (logic “0”) precedes the 8- or 16-bit data output string.
ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the Erase/Write Disable
(EWDS) state when power is first applied. An Erase/Write Enable (EWEN) instruction must be executed first
before any programming instructions can be carried out. Please note that once in the EWEN state,
programming remains enabled until an EWDS instruction is executed or VCC power is removed from the part.
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified memory location to the
logical “1” state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The
DO pin outputs the Ready/ Busy status of the part if CS is brought high after being kept low for a minimum
of 250 ns (tCS). A logic “1” at pin DO indicates that the selected memory location has been erased, and the part
is ready for another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the
specified memory location. The self-timed programming cycle, tWP, starts after the last bit of data is received
at serial data input pin DI. The DO pin outputs the Ready/ Busy status of the part if CS is brought high
after being kept low for a minimum of 250 ns (tCS). A logic “0” at DO indicates that programming is still in
progress. A logic “1” indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions. A Ready/ Busy status
cannot be obtained if the CS is brought high after the end of the selftimed programming cycle, tWP.
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1”
state and is primarily used for testing purposes. The DO pin outputs the Ready/ Busy status of the part if CS
is brought high after being kept low for a minimum of 250 ns (tCS). The ERAL instruction is valid only at Vcc =
2.5V ~5.5V
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns
specified in the instruction. The DO pin outputs the Ready/ Busy status of the part if CS is brought high
after being kept low for a minimum of 250 ns (tCS). The WRAL instruction is valid only at Vcc = 2.5V ~5.5V.
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write Disable
(EWDS) instruction disables all programming modes and should be executed after all programming
operations. The operation of the Read instruction is independent of both the EWEN and EWDS instructions
and can be executed at any time.
READY/ BUSY status: While the Write or Erase cycle is underway, for a WRITE, ERASE, WRAL or ERAL
instruction, the Busy signal (DO=0) is returned whenever Chip Select input (CS) is driven high. (Please note,
though, that there is an initial delay, of tCS, before this status information becomes available). In this state, the
FM93C46A/56A/66A ignores any data on the bus. When the Write cycle is completed, and Chip Select Input
(CS) is driven high, the Ready signal (DO=1) indicates that the FM93C46A/56A/66A is ready to receive the
next instruction. Serial Data Output (DO) remains set to 1 until the Chip Select Input (CS) is brought low or
until a new start bit is decoded.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 7
Timing Diagrams
Figure 2 READ Timing
tCS
CS
SK
1 1 0 AN ... A0
DI
HIGH IMPEDANCE
DO 0 DN ... D0
Figure 3 EWEN Timing
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FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 8
Figure 4 ERASE Timing
Figure 5 WRITE Timing
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FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 9
Figure 6 ERAL Timing
Figure 7 WRAL Timing
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FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 10
Figure 8 EWDS Timing
Figure 9 BUS Timing
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 11
Pin Capacitance
Symbol Parameter Test Condition Max Units
CIN(1) Input Capacitance VIN = 0V, f = 1 MHz 6 pF
COUT(1) Output Capacitance VOUT = 0V, f = 1 MHz 8 pF
Note: 1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TA = -40°C to +85°C, VCC = +1.7V to +5.5V, (unless
otherwise noted).
Symbol Parameter Test Condition Min Max Units
VCC Supply Voltage 1.7 5.5 V
VCC = 5.0V, fsk = 2.0 MHz CS = VIH, 2.0 mA
ICC Supply
VCC = 1.7V, fsk = 1.0 MHz DO =open 1.0 mA
VCC=5V CS = SK = GND, 15.0 µA
ISB Standby Current
VCC = 1.7V ORG = VCC/GND 2.0 µA
ILI Input Leakage 0V ≤ VIN ≤ Vcc -1.0 1.0 µA
ILO Output Leakage 0V ≤ VOUT ≤ Vcc ; DO = Hi-Z -1.0 1.0 µA
VIL Input Low Voltage -0.45 0.2Vcc V
VIH Input High Voltage 0.8VCC VCC+0.5 V
VCC = 5V IOL = 2.1 mA 0.4 V
VOL Output Low Voltage
VCC = 1.7V IOL = 100 µA 0.2 V
VCC = 5V IOH = -400 µA 0.8Vcc V
VOH Output High Voltage
VCC = 1.7V IOH = -100 µA VCC-0.2 V
Note: 1. VIL min and VIH max are reference only and are not tested.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 12
AC Characteristics
Applicable over recommended operating range from: TA = -40°C to +85°C, VCC = 1.7V to 5.5V, CL = 100
pF (unless otherwise noted). Test conditions are listed in Note 2.
1.7V ≤ Vcc ≤ 2.5V 2.5V < Vcc ≤ 5.5V
Symbol Parameter Units
Min Max Min Max
f SK B SK Clock Frequency 1 2 MHz
t SKLB SK Low Time 250 200 ns
t SKH
B B SK High Time 250 200 ns
t CS B Minimum CS Low 250 200 ns
t CSS
B B CS Setup Time 50 50 ns
t CSH
B CS Hold Time 0 0 ns
tDIS B DI Setup Time 100 50 ns
t DIH B DI Hold Time 100 50 ns
t PD1B Output Delay to “1” 400 200 ns
t PD0B Output Delay to “0” 400 200 ns
t SV B B CS to Status Valid 400 200 ns
t DF B B CS to DO in High 200 100 ns
t WR B B Write Cycle 5 5 ms
(1) Write
Endurance 3.3V, 25°C 1,000,000
Cycles
Notes: 1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions:
Input pulse voltages: 0.2 VCC to 0.8 VCC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.3 VCC ~ 0.7 VCC
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 13
Ordering Information
FM 93C DD A -PP -C -H
Company Prefix
FM = Shanghai Fudan Microelectronics Group Co.,ltd
Product Family
93C = Three-wire Serial EEPROM
Product Density
46 = 1K-bit
56 = 2K-bit
66 = 4K-bit
Supply Voltage
A = 1.7V to 5.5V
Package Type (1)
PD = 8-pin PDIP
SO = 8-pin SOP
TS = 8-pin TSSOP
DN = 8-pin TDFN
ST = 6-pin TSOT23
Product Carrier
U = Tube
T = Tape and Reel
HSF ID Code (2)
Blank or R = RoHS Compliant
G = RoHS Compliant, Halogen-free, Antimony-free
Note:
1. For SO, TS, DN package, MSL1 package are available, for detail please contact local sales
office..
2. For PD package: R class offer only
For SO, TS, DN and ST package: G class offer only.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 14
Part Marking Scheme
PDIP8
SOP8
TSSOP8
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 15
TDFN8
TSOT23-6L
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 16
Packaging Information
PDIP 8
Symbol MIN MAX
A ‐‐‐ 5.000
A1 0.380 ---
b 0.380 0.570
b2 1.300 1.700
C 0.200 0.360
D 9.000 10.000
E1 6.100 7.000
E 7.320 8.250
e 2.540(BSC)
L 2.920 3.810
eB ‐‐‐ 10.900
NOTE:
1. Dimensions are in Millimeters.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 17
SOP 8
Symbol MIN MAX
A 1.350 1.750
A1 0.050 0.250
b 0.330 0.510
c 0.150 0.250
D 4.700 5.150
E1 3.800 4.000
E 5.800 6.200
e 1.270(BSC)
L 0.400 1.270
θ 0° 8°
NOTE:
1. Dimensions are in Millimeters.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 18
TSSOP8
Symbol MIN MAX
D 2.900 3.100
E1 4.300 4.500
b 0.190 0.300
c 0.090 0.200
E 6.250 6.550
A 1.200
A1 0.050 0.150
e 0.650 (BSC)
L 0.450 0.750
θ 0° 8°
NOTE:
1. Dimensions are in Millimeters.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 19
TDFN8
Symbol MIN MAX
A 0.700 0.800
A1 0.000 0.050
D 1.900 2.100
E 2.900 3.100
D2 1.400 1.600
E2 1.400 1.600
k 0.200(MIN)
b 0.200 0.300
e 0.500(TYP)
L 0.200 0.400
NOTE:
1. Dimensions are in Millimeters.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 20
TSOT23-5L
Symbol MIN MAX
A 0.700 0.900
A1 0.000 0.100
b 0.350 0.500
c 0.080 0.200
D 2.820 3.020
E1 1.600 1.700
E 2.650 2.950
e 0.950(BSC)
e1 1.900(BSC)
L 0.300 0.600
θ 0° 8°
NOTE:
1. Dimensions are in Millimeters.
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 21
Revision History
Publication Paragraph or
Version Pages Revise Description
date Illustration
Preliminary May. 2013 23 Initial Document Release
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 22
Sales and Service
Shanghai Fudan Microelectronics Group Co., Ltd.
Address: Bldg No. 4, 127 Guotai Rd,
Shanghai City China.
Postcode: 200433
Tel: (86-021) 6565 5050
Fax: (86-021) 6565 9115
Shanghai Fudan Microelectronics (HK) Co., Ltd.
Address: Unit 506, 5/F., East Ocean Centre, 98 Granville Road,
Tsimshatsui East, Kowloon, Hong Kong
Tel: (852) 2116 3288 2116 3338
Fax: (852) 2116 0882
Beijing Office
Address: Room 423, Bldg B, Gehua Building,
1 QingLong Hutong, Dongzhimen Alley north Street,
Dongcheng District, Beijing City, China.
Postcode: 100007
Tel: (86-010) 8418 6608
Fax: (86-010) 8418 6211
Shenzhen Office
Address: Room.1301, Century Bldg, No. 4002, Shengtingyuan Hotel, Huaqiang
Rd (North),
Shenzhen City, China.
Postcode: 518028
Tel: (86-0755) 8335 0911 8335 1011 8335 2011 8335 0611
Fax: (86-0755) 8335 9011
Shanghai Fudan Microelectronics (HK) Ltd Taiwan
Representative Office
Address: Unit 1225, 12F., No 252, Sec.1 Neihu Rd., Neihu Dist.,
Taipei City 114, Taiwan
Tel : (886-2) 7721 1889
Fax: (886-2) 7722 3888
Shanghai Fudan Microelectronics (HK) Ltd Singapore
Representative Office
Address : 237, Alexandra Road, #07-01 The Alexcier, Singapore
159929
Tel : (65) 6472 3688
Fax: (65) 6472 3669
Shanghai Fudan Microelectronics Group Co., Ltd NA Office
Address :2490 W. Ray Road Suite#2
Chandler, AZ 85224 USA
Tel : (480) 857-6500 ext 18
Web Site: http://www.fmsh.com/
Datasheet
FM93C46A/56A/66A Three-wire Serial EEPROM Ver.1.0 23
