DATA SHEET

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Axial Lead Rectifiers SCHOTTKY BARRIER

RECTIFIERS
1N5820, 1N5821, 1N5822 3.0 AMPERES
1N5820 and 1N5822 are Preferred Devices 20, 30, 40 VOLTS
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.

Features
• Extremely Low VF
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
AXIAL LEAD
• Shipped in plastic bags, 500 per bag CASE 267−05
• Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to (DO−201AD)
the part number STYLE 1

• Pb−Free Packages are Available*

Mechanical Characteristics: MARKING DIAGRAM

• Case: Epoxy, Molded
• Weight: 1.1 Gram (Approximately)
A
• Finish: All External Surfaces Corrosion Resistant and Terminal 1N
Leads are Readily Solderable 582x
YYWWG
• Lead Temperature for Soldering Purposes: G
260°C Max. for 10 Seconds
• Polarity: Cathode indicated by Polarity Band A = Assembly Location
1N582x = Device Code
x = 0, 1, or 2
YY = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please
download the onsemi Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

November, 2023 − Rev. 11 1N5820/D
 1N5820, 1N5821, 1N5822

MAXIMUM RATINGS
Rating Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Non−Repetitive Peak Reverse Voltage VRSM 24 36 48 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Forward Current (Note 1) IO 3.0 A
VR(equiv)  0.2 VR(dc), TL = 95°C
(RqJA = 28°C/W, P.C. Board Mounting, see Note 5)
Ambient Temperature TA 90 85 80 °C
Rated VR(dc), PF(AV) = 0
RqJA = 28°C/W
Non−Repetitive Peak Surge Current IFSM 80 (for one cycle) A
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
Operating and Storage Junction Temperature Range TJ, Tstg −65 to +125 °C
(Reverse Voltage applied)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

*THERMAL CHARACTERISTICS (Note 5)

Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 28 °C/W

*ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)

Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Maximum Instantaneous Forward Voltage (Note 2) VF V
(iF = 1.0 Amp) 0.370 0.380 0.390
(iF = 3.0 Amp) 0.475 0.500 0.525
(iF = 9.4 Amp) 0.850 0.900 0.950
Maximum Instantaneous Reverse Current iR mA
@ Rated dc Voltage (Note 2)
TL = 25°C 2.0 2.0 2.0
TL = 100°C 20 20 20
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820−22.

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 1N5820, 1N5821, 1N5822

NOTE 3 — DETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibility of thermal use in common rectifier circuits, Table 1 indicates suggested
runaway must be considered when operating this rectifier at factors for an equivalent dc voltage to use for conservative
reverse voltages above 0.1 VRWM. Proper derating may be design, that is:
accomplished by use of equation (1). VR(equiv) = V(FM)  F (4)
TA(max) = TJ(max)  RqJAPF(AV)  RqJAPR(AV)(1) The factor F is derived by considering the properties of the
where TA(max) = Maximum allowable ambient temperature various rectifier circuits and the reverse characteristics of
TJ(max) = Maximum allowable junction temperature Schottky diodes.
(125°C or the temperature at which thermal EXAMPLE: Find TA(max) for 1N5821 operated in a
runaway occurs, whichever is lowest) 12−volt dc supply using a bridge circuit with capacitive filter
PF(AV) = Average forward power dissipation such that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input
PR(AV) = Average reverse power dissipation Voltage = 10 V(rms), RqJA = 40°C/W.
RqJA = Junction−to−ambient thermal resistance
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
Figures 1, 2, and 3 permit easier use of equation (1) by
VR(equiv) = (1.41) (10) (0.65) = 9.2 V.
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature Step 2. Find TR from Figure 2. Read TR = 108°C
as determined by equation (2). @ VR = 9.2 V and RqJA = 40°C/W.
TR = TJ(max)  RqJAPR(AV) (2) Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W
I (FM)
Substituting equation (2) into equation (1) yields: @  10 and I F(AV)  1.0 A.
I (AV)
TA(max) = TR  RqJAPF(AV) (3)
Step 4. Find TA(max) from equation (3).
Inspection of equations (2) and (3) reveals that TR is the TA(max) = 108  (0.85) (40) = 74°C.
ambient temperature at which thermal runaway occurs or
**Values given are for the 1N5821. Power is slightly lower
where TJ = 125°C, when forward power is zero. The
for the 1N5820 because of its lower forward voltage, and
transition from one boundary condition to the other is
higher for the 1N5822. Variations will be similar for the
evident on the curves of Figures 1, 2, and 3 as a difference
MBR−prefix devices, using PF(AV) from Figure 6.
in the rate of change of the slope in the vicinity of 115°C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For

Table 1. Values for Factor F

Full Wave,
Circuit Half Wave Full Wave, Bridge Center Tapped*†
Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that VR(PK)  2.0 Vin(PK).
†Use line to center tap voltage for Vin.

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 1N5820, 1N5821, 1N5822

125 125
20 15 20
TR , REFERENCE TEMPERATURE (° C)

TR , REFERENCE TEMPERATURE (°C)

10 15
8.0 10
115 115
8.0

105 105
RqJA (°C/W) = 70 RqJA (°C/W) = 70

95 50 95 50
40 40
28 28
85 85

75 75
2.0 3.0 4.0 5.0 7.0 10 15 20 3.0 4.0 5.0 7.0 10 15 20 30
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Maximum Reference Temperature Figure 2. Maximum Reference Temperature

1N5820 1N5821

125 40
20 MAXIMUM
35
TR , REFERENCE TEMPERATURE (° C)

15 TYPICAL
115 R qJL , THERMAL RESISTANCE
10 JUNCTION-TO-LEAD (° C/W) 30
8.0
105 25

20
RqJA (°C/W) = 70
95
15
50
10
85 40
BOTH LEADS TO HEATSINK,
28 5.0 EQUAL LENGTH
75 0
4.0 5.0 7.0 10 15 20 30 40 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 1.0
VR, REVERSE VOLTAGE (VOLTS) L, LEAD LENGTH (INCHES)

Figure 3. Maximum Reference Temperature Figure 4. Steady−State Thermal Resistance

1N5822

1.0
The temperature of the lead should be measured using a ther­
r(t), TRANSIENT THERMAL RESISTANCE

LEAD LENGTH = 1/4″

0.5 mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
0.3 enough so that it will not significantly respond to heat surges
0.2 generated in the diode as a result of pulsed operation once
(NORMALIZED)

Ppk Ppk
steady-state conditions are achieved. Using the measured val­ DUTY CYCLE = tp/t1
tp
ue of TL, the junction temperature may be determined by: PEAK POWER, Ppk, is peak of an
0.1 TIME
TJ = TL + DTJL equivalent square power pulse.
t1
0.05 DTJL = Ppk • RqJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:
DTJL = the increase in junction temperature above the lead temperature.
0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:
0.02 r(t1 + tp) = normalized value of transient thermal resistance at time
t1 + tp, etc.
0.01
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k
t, TIME (ms)
Figure 5. Thermal Response

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 1N5820, 1N5821, 1N5822

10 NOTE 4 − APPROXIMATE THERMAL CIRCUIT MODEL

PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
7.0
5.0 SINE WAVE RqS(A) RqL(A) RqJ(A) RqJ(K) RqL(K) RqS(K)
I
(FM)
3.0  p(ResistiveLoad) TA(A) TA(K)
I dc PD
2.0 (AV)
TL(A) TC(A) TJ TC(K) TL(K)

1.0
0.7
Capacitive
Loads  5.0
10
20
SQUARE WAVE

0.5
Use of the above model permits junction to lead thermal
0.3 resistance for any mounting configuration to be found. For
TJ ≈ 125°C
0.2 a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Terms in the model signify:
IF(AV), AVERAGE FORWARD CURRENT (AMP) TA = Ambient Temperature TC = Case Temperature
Figure 6. Forward Power Dissipation 1N5820−22 TL = Lead Temperature TJ = Junction Temperature
RqS = Thermal Resistance, Heatsink to Ambient
RqL = Thermal Resistance, Lead−to−Heatsink
RqJ = Thermal Resistance, Junction−to−Case
PD = Total Power Dissipation = PF + PR
PF = Forward Power Dissipation
PR = Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
RqL = 42°C/W/in typically and 48°C/W/in maximum
RqJ = 10°C/W typically and 16°C/W maximum
The maximum lead temperature may be found as follows:
TL = TJ(max)  n TJL
where n TJL  RqJL · PD

Mounting Method 1 Mounting Method 3

P.C. Board where available P.C. Board with
NOTE 5 — MOUNTING DATA copper surface is small. 2-1/2, x 2-1/2,

É
copper surface.
Data shown for thermal resistance junction−to−ambient (RqJA)

ÉÉÉÉÉÉÉ É
L L
for the mountings shown is to be used as typical guideline values

ÉÉÉÉÉÉÉ É
L = 1/2″
for preliminary engineering, or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR RqJA IN STILL AIR
É
Mounting
Lead Length, L (in)
É
Mounting Method 2

ÉÉÉÉÉÉÉÉ
Method 1/8 1/4 1/2 3/4 RqJA L L BOARD GROUND
PLANE
1
2
3
50
58
51
59
28
53
61
55
63
°C/W
°C/W
°C/W
ÉÉÉÉÉÉÉÉVECTOR PUSH-IN
TERMINALS T-28

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 1N5820, 1N5821, 1N5822

50 100

IFSM , PEAK HALF-WAVE CURRENT (AMP)

70
30
50
20
TL = 75°C
f = 60 Hz
TJ = 100°C 30
10

20 1 CYCLE
7.0
i F, INSTANTANEOUS FORWARD CURRENT (AMP)

5.0
SURGE APPLIED AT RATED LOAD CONDITIONS

25°C 10
3.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
NUMBER OF CYCLES
2.0
Figure 8. Maximum Non−Repetitive Surge
Current
1.0 100

0.7 50
TJ = 125°C
0.5 20

10
100°C
IR , REVERSE CURRENT (mA)

0.3
5.0
0.2
2.0 75°C
1.0

0.1 0.5

0.07 0.2
0.1 25°C
0.05
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.05 1N5820
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1N5821
0.02 1N5822
Figure 7. Typical Forward Voltage 0.01
0 4.0 8.0 12 16 20 24 28 32 36 40
VR, REVERSE VOLTAGE (VOLTS)
500
Figure 9. Typical Reverse Current
1N5820
C, CAPACITANCE (pF)

300

NOTE 6 — HIGH FREQUENCY OPERATION

200
1N5821
TJ = 25°C Since current flow in a Schottky rectifier is the result of
f = 1.0 MHz majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
100
carrier injection and stored charge. Satisfactory circuit ana-
70 1N5822 lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 (See Figure 10.)
VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Typical Capacitance

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 1N5820, 1N5821, 1N5822

ORDERING INFORMATION
Device Package Shipping†
1N5820 Axial Lead 500 Units/Bag
1N5820G Axial Lead 500 Units/Bag
(Pb−Free)
1N5820RL Axial Lead 1500/Tape & Reel
1N5820RLG Axial Lead 1500/Tape & Reel
(Pb−Free)
1N5821 Axial Lead 500 Units/Bag
1N5821G Axial Lead 500 Units/Bag
(Pb−Free)
1N5821RL Axial Lead 1500/Tape & Reel
1N5821RLG Axial Lead 1500/Tape & Reel
(Pb−Free)
1N5822 Axial Lead 500 Units/Bag
1N5822G Axial Lead 500 Units/Bag
(Pb−Free)
1N5822RL Axial Lead 1500/Tape & Reel
1N5822RLG Axial Lead 1500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

AXIAL LEAD
CASE 267−05
ISSUE G DATE 06/06/2000

SCALE 1:1 NOTES:

1. DIMENSIONS AND TOLERANCING PER ANSI
K A Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D 3. 267-04 OBSOLETE, NEW STANDARD 267-05.
1 2
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.287 0.374 7.30 9.50
B B 0.189 0.209 4.80 5.30
K D 0.047 0.051 1.20 1.30
K 1.000 --- 25.40 ---

STYLE 1: STYLE 2:
PIN 1. CATHODE (POLARITY BAND) NO POLARITY
2. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42170B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: AXIAL LEAD PAGE 1 OF 1

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