LASER DIODE
NX6311EH
1 310 nm AlGaInAs MQW-DFB LASER DIODE
FOR 4 Gb/s FIBER CHANNEL APPLICATION
DESCRIPTION
The NX6311EH is a 1 310 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATION
• 4 G fiber channel
FEATURES
• Optical output power Po = 7.0 mW
• Low threshold current lth = 8 mA
• Differential efficiency ηd = 0.40 W/A
• Wide operating temperature range TC = −30 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 5.8 mm
Document No. PL10631EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)
2006
NX6311EH
PACKAGE DIMENSIONS (UNIT: mm)
φ 5.6+0.00
–0.03
*2
(φ 4.2)
*2
(φ 3.55)
1.0±0.1
BOTTOM VIEW
*2
110˚±2˚
(0.3)
2 4
3
*2
(0.3)
*1
Focal Point
φ 2.0 ∆ x = ±300 µ m MAX.
∆ y = ±300 µ m MAX.
5.80±0.5
3.87±0.3
2.97±0.2
PIN CONNECTIONS
1 (Case)
15.0±1.0 1.2±0.1
Reference
Plane
LD
2 4
4– φ 0.45 PD
3
φ 2.0
*1 Focal Point: A point to get maximum optical output power from fiber.
*2 ( ) indicates nominal dimension.
2 Data Sheet PL10631EJ01V0DS
NX6311EH
ORDERING INFORMATION
Part Number Package Pin Connections
1
NX6311EH-AZ 4-pin CAN with ball lens cap
LD
2 4
PD
3
Remarks 1. The color of ball lens cap might be observed differently.
2. The hermetic test will be performed as AQL 1.0%.
Data Sheet PL10631EJ01V0DS 3
NX6311EH
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Optical Output Power Po 15 mW
Forward Current of LD IF 120 mA
Reverse Voltage of LD VR 2.0 V
Forward Current of PD IF 10 mA
Reverse Voltage of PD VR 20 V
Operating Case Temperature TC −30 to +85 °C
Storage Temperature Tstg −40 to +85 °C
Lead Soldering Temperature Tsld 350 (3 sec.) °C
Relative Humidity (noncondensing) RH 85 %
RECOMMENDED OPERATING CONDITION
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Bias Current Ibias TC = 25°C, refer to below Ith +20 mA
Pf
(mW)
P1
Ex = 10 log [dB]
P0
P1
P0
Imod
0 IF
(mA)
Ibias
4 Data Sheet PL10631EJ01V0DS
NX6311EH
ELECTRO-OPTICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Operating Voltage Vop CW, Po = 7.0 mW, TC = +25°C 1.3 1.6 V
CW, Po = 7.0 mW 2.0
Threshold Current Ith CW, TC = +25°C 8 20 mA
CW 2 40
Differential Efficiency ηd CW, TC = +25°C 0.25 0.40 0.50 W/A
CW 0.12 0.65
Peak Emission Wavelength λp Po = 7.0 mW, RMS (−20 dB) 1 290 1 330 nm
Temperature Dependence of Slope ∆η ηd (@ 85°C) −3.0 1.5 dB
∆η = 10 log
Efficiency ηd (@ 25°C)
Spectral Width σ Po = 7.0 mW, RMS (−20 dB) 1 nm
Rise Time tr 20-80% 90 ps
Fall Time tf 80-20% 90 ps
Side Mode Suppression Ratio SMSR CW, Po = 7.0 mW 35 dB
Relative Intensity Noise RIN CW, Po = 7.0 mW −120 dB/Hz
Monitor Current Im VR = 1.5 V, Po = 7.0 mW 200 2 000 µA
Monitor Dark Current ID VR = 5 V 500 nA
Monitor PD Terminal Capacitance Ct VR = 5 V, f = 1 MHz 6 20 pF
Data Sheet PL10631EJ01V0DS 5
NX6311EH
TYPICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherwise specified)
OPTICAL OUTPUT POWER OPERATING CURRENT AND THRESHOLD
vs. FORWARD CURRENT CURRENT vs. CASE TEMPERATURE
10 100
Optical Output Power Po (mW)
TC = –30˚C +25˚C 50
+85˚C
Operating Current Iop (mA),
Threshold Current Ith (mA)
Iop
Ith
5 10
1
0 10 20 30 40 50 60 –40 –20 0 20 40 60 80 100
Forward Current IF (mA) Case Temperature TC (˚C)
TEMPERATURE DEPENDENCE OF
PEAK EMISSION WAVELENGTH
1 350
Peak Emission Wavelength λP (nm)
1 340
1 330
1 320
1 310
1 300
1 290
1 280
1 270
–40 –20 0 20 40 60 80 100
Case Temperature TC (˚C)
Remark The graphs indicate nominal characteristics.
6 Data Sheet PL10631EJ01V0DS
NX6311EH
TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
FORWARD CURRENT vs. OPTICAL OUTPUT POWER
FORWARD VOLTAGE vs. MONITOR CURRENT
50 10
Optical Output Power Po (mW)
40
Forward Current IF (mA)
30
5
20
10
0 0
1 2 300 600 900 1 200 1 500
Forward Voltage VF (V) Monitor Current Im (µA)
SPECTRUM
–10
–20
Relative Intensity
–30
–40
–50
–60
–70
1 296.0 1 306.0 1 316.0
Wavelength λ (nm)
Remark The graphs indicate nominal characteristics.
Data Sheet PL10631EJ01V0DS 7
NX6311EH
REFERENCE
Document Name Document No.
*1
Opto-Electronics Devices Pamphlet PX10160E
*1 Published by the former NEC Compound Semiconductor Devices, Ltd.
8 Data Sheet PL10631EJ01V0DS
NX6311EH
• The information in this document is current as of September, 2006. The information is subject to
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M8E 02. 11-1
Data Sheet PL10631EJ01V0DS 9
NX6311EH
SAFETY INFORMATION ON THIS PRODUCT
SEMICONDUCTOR LASER
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
AVOID EXPOSURE-Invisible
OUTPUT POWER mW MAX
WAVELENGTH nm Laser Radiation is emitted from
CLASS lllb LASER PRODUCT this aperture
A laser beam is emitted from this diode during operation.
Warning Laser Beam
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
This product uses gallium arsenide (GaAs).
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: contact@ncsd-hk.necel.com
Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309
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TEL: +49-211-6503-0 FAX: +49-211-6503-1327
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TEL: +1-408-988-3500 FAX: +1-408-988-0279
Compound Semiconductor Devices Division
NEC Electronics Corporation
URL: http://www.ncsd.necel.com/
0604
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
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go into its products as of the date of disclosure of this information.
Restricted Substance Concentration Limit per RoHS Concentration contained
per RoHS (values are not yet fixed) in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM
Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
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PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
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