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Microelectronics Reliability, Volume 49
Volume 49, Number 1, January 2009
- W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan:
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. 1-7 - Chao Gao, Jun Wang
, Lei Wang, Andrew Yap, Hong Li:
Two-stage hot-carrier degradation behavior of 0.18 µm 18 V n-type DEMOS and its recovery effect. 8-12 - Hei Wong
, Y. Fu, Juin J. Liou, Y. Yue:
Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors. 13-16 - Yi Shan, John He, Wen Huang:
New substrate-triggered ESD protection structures in a 0.18-µm CMOS process without extra mask. 17-25 - M. S. Rahman, E. K. Evangelou, I. I. Androulidakis
, Athanasios Dimoulas
:
Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-kappa gate stacks on germanium. 26-31 - Peter G. Muzykov, Robert M. Kennedy, Qingchun Zhang, Craig Capell, Al Burk, Anant Agarwal, Tangali S. Sudarshan:
Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors. 32-37 - Jun Liu, Wing-Shan Tam, Hei Wong
, Valeriu Filip
:
Temperature-dependent light-emitting characteristics of InGaN/GaN diodes. 38-41 - Keun Ho Rhew, Su Chang Jeon, Dae Hee Lee, Byueng-Su Yoo, Ilgu Yun:
Reliability assessment of 1.55-µm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests. 42-50 - Reiner W. Kuehl:
Stability of thin film resistors - Prediction and differences base on time-dependent Arrhenius law. 51-58 - Ta-Hsuan Lin, Stephen Paul, Susan S. Lu, Huitian Lu:
A study on the performance and reliability of magnetostatic actuated RF MEMS switches. 59-65 - Haifei Bao, Zhaohui Song, Deren Lu, Xinxin Li:
A simple estimation of transverse response of high-g accelerometers by a free-drop-bar method. 66-73 - V. Born, M. Beck, O. Bosholm, D. Dalleau, S. Glenz, I. Haverkamp, G. Kurz, F. Lange, Anja Vest:
Extended metallization reliability testing: Combining standard wafer level with product tests to increase test sensitivity. 74-78 - Fang Liu, Guang Meng, Mei Zhao, Jun feng Zhao:
Experimental and numerical analysis of BGA lead-free solder joint reliability under board-level drop impact. 79-85 - Weiqun Peng:
An investigation of Sn pest in pure Sn and Sn-based solders. 86-91 - Kati Kokko, Hanna Harjunpää, Pekka Heino, Minna Kellomäki
:
Influence of medical sterilization on ACA flip chip joints using conformal coating. 92-98 - Sangwook Kwon, Jongseok Kim, Gilsu Park, Youngtack Hong, Byeong-Kwon Ju, Insang Song:
RF device package method using Au to Au direct bonding technology. 99-102
Volume 49, Number 2, February 2009
- Zeynep Çelik-Butler, Siva Prasad Devireddy, Hsing-Huang Tseng, Philip J. Tobin, Ania Zlotnicka:
A low-frequency noise model for advanced gate-stack MOSFETs. 103-112
- Te-Kuang Chiang:
A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's. 113-119 - Giacomo Langfelder
, Antonio Longoni, Federico Zaraga, Alberto Corigliano
, Aldo Ghisi
, A. Merassi:
A new on-chip test structure for real time fatigue analysis in polysilicon MEMS. 120-126 - A. Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mark D. Vaudin, Mona E. Zaghloul
:
Experimental and simulation studies of resistivity in nanoscale copper films. 127-134 - Fernanda Irrera, Ivan Piccoli, Giuseppina Puzzilli, Massimo Rossini, Tommaso Vali:
Reliability improvements in 50 nm MLC NAND flash memory using short voltage programming pulses. 135-138 - Ee-Hua Wong
, S. K. W. Seah, W. D. van Driel, J. F. J. M. Caers, N. Owens, Y.-S. Lai:
Advances in the drop-impact reliability of solder joints for mobile applications. 139-149 - Xuefen Ong, Soon Wee Ho, Yue Ying Ong, Leong Ching Wai, Kripesh Vaidyanathan, Yeow Kheng Lim
, David Yeo, Kai Chong Chan, Juan Boon Tan, Dong Kyun Sohn, Liang Choo Hsia, Zhong Chen
:
Underfill selection methodology for fine pitch Cu/low-k FCBGA packages. 150-162 - Yue-Tzu Yang, Huan-Sen Peng:
Investigation of planted pin fins for heat transfer enhancement in plate fin heat sink. 163-169 - Xiaoxiao Liu, Guangsheng Ma, Jingbo Shao, Zhi Yang, Guanjun Wang:
Interconnect crosstalk noise evaluation in deep-submicron technologies. 170-177 - M. Reza Javaheri, Reza Sedaghat:
Multi-valued logic mapping of resistive short and open delay-fault testing in deep sub-micron technologies. 178-185 - Miljana Sokolovic, Vanco B. Litovski, Mark Zwolinski
:
New concepts of worst-case delay and yield estimation in asynchronous VLSI circuits. 186-198 - Seyyed Javad Seyyed Mahdavi
, Karim Mohammadi:
Evolutionary derivation of optimal test sets for neural network based analog and mixed signal circuits fault diagnosis approach. 199-208
- C. Cantin, C. Laviron, G. Gove:
Charging control on high energy implanters: A process requirement demonstrated by plasma damage monitoring. 209-214 - C. Cantin, G. Gove, G. Polisski:
Verification and reduction of surface charging during high/medium current implantations by implementing plasma damage monitoring. 215-220
Volume 49, Number 3, March 2009
- Yi-Shao Lai, Ho-Ming Tong, King-Ning Tu:
Recent research advances in Pb-free solders. 221-222 - Jun Shen
, Y. C. Chan:
Research advances in nano-composite solders. 223-234 - Li-Wei Lin, Jenn-Ming Song
, Yi-Shao Lai, Ying-Ta Chiu, Ning-Cheng Lee, Jun-Yen Uan
:
Alloying modification of Sn-Ag-Cu solders by manganese and titanium. 235-241 - Tomi Laurila
, J. Hurtig, Vesa Vuorinen
, Jorma K. Kivilahti:
Effect of Ag, Fe, Au and Ni on the growth kinetics of Sn-Cu intermetallic compound layers. 242-247 - Yi-Wun Wang
, Y. W. Lin, C. Robert Kao
:
Kirkendall voids formation in the reaction between Ni-doped SnAg lead-free solders and different Cu substrates. 248-252 - Brook Huang-Lin Chao, Xuefeng Zhang, Seung-Hyun Chae, Paul S. Ho:
Recent advances on kinetic analysis of electromigration enhanced intermetallic growth and damage formation in Pb-free solder joints. 253-263 - Jiunn Chen
, Yi-Shao Lai:
Towards elastic anisotropy and strain-induced void formation in Cu-Sn crystalline phases. 264-268 - S. M. Hayes, Nikhilesh Chawla
, D. R. Frear:
Interfacial fracture toughness of Pb-free solders. 269-287 - Sun-Kyoung Seo, Sung K. Kang, Da-Yuan Shih, Hyuck Mo Lee:
The evolution of microstructure and microhardness of Sn-Ag and Sn-Cu solders during high temperature aging. 288-295 - Feng Gao, Hiroshi Nishikawa
, Tadashi Takemoto, Jianmin Qu:
Mechanical properties versus temperature relation of individual phases in Sn-3.0Ag-0.5Cu lead-free solder alloy. 296-302 - Ruihong Zhang, Ran Zhao, Fu Guo, Zhidong Xia:
Interfacial reaction between the electroless nickel immersion gold substrate and Sn-based solders. 303-309 - S. T. Jenq, Hsuan-Hu Chang, Yi-Shao Lai, Tsung-Yueh Tsai:
High strain rate compression behavior for Sn-37Pb eutectic alloy, lead-free Sn-1Ag-0.5Cu and Sn-3Ag-0.5Cu alloys. 310-317 - Albert T. Wu, Y. C. Ding:
The suppression of tin whisker growth by the coating of tin oxide nano particles and surface treatment. 318-322
- Vivek Chidambaram, John Hald
, Jesper Henri Hattel
:
Development of gold based solder candidates for flip chip assembly. 323-330 - J. de Vries, M. Jansen, Willem D. van Driel:
Solder-joint reliability of HVQFN-packages subjected to thermal cycling. 331-339 - Aldo Ghisi
, Fabio Fachin, Stefano Mariani
, Sarah Zerbini:
Multi-scale analysis of polysilicon MEMS sensors subject to accidental drops: Effect of packaging. 340-349 - Shufeng Zhao, Xingshou Pang:
Investigation of delamination control in plastic package. 350-356
Volume 49, Number 4, April 2009
- Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki:
Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal. 357-364 - A. Srivastava, Partha Sarkar
, Chandan Kumar Sarkar:
Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications. 365-370 - Chia-Huai Ho, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Chun-Chang Lu, Tien-Ko Wang:
Employing vertical dielectric layers to improve the operation performance of flash memory devices. 371-376 - Fayçal Djeffal, Z. Ghoggali, Zohir Dibi, N. Lakhdar:
Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges. 377-381 - Dongyue Jin, Wanrong Zhang, Hongyun Xie, Liang Chen, Pei Shen, Ning Hu:
Structure optimization of multi-finger power SiGe HBTs for thermal stability improvement. 382-386 - Sik-Lam Siu, Hei Wong
, Wing-Shan Tam, Kuniyuki Kakushima, Hiroshi Iwai:
Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors. 387-391 - Partha Sarkar
, Abhijit Mallik, Chandan Kumar Sarkar:
Study on the performance of sub 100 nm LACLATI MOSFETs for digital application. 392-396 - Long Bin Tan
, Xiaowu Zhang
, Chwee Teck Lim
, Vincent B. C. Tan:
Mapping the failure envelope of board-level solder joints. 397-409 - John Kontoleon:
Soft error recovery in simplex and triplex memory systems. 410-423 - Krzysztof Górecki
, Janusz Zarebski
:
Electrothermal analysis of the self-excited push-pull DC-DC converter. 424-430 - Krzysztof Górecki
:
Non-linear average electrothermal models of buck and boost converters for SPICE. 431-437 - Jong Kang Park, Jong Tae Kim, Myong-Chul Shin:
A CORDIC-based digital protective relay and its architecture. 438-447 - Tatjana R. Nikolic
, Mile K. Stojcev, Goran Lj. Djordjevic:
CDMA bus-based on-chip interconnect infrastructure. 448-459
- Raúl José Martín-Palma
, Carlo G. Pantano, Akhlesh Lakhtakia:
Towards the use of the conformal-evaporated-film-by-rotation technique in fabricating microelectronic circuits and microsystems. 460-462 - Chel-Jong Choi, Ha-Yong Yang, Hyo-Bong Hong, Jin-Gyu Kim, Sung-Yong Chang, Jouhahn Lee:
Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film. 463-465
Volume 49, Number 5, May 2009
- Peter Ersland, Roberto Menozzi
:
Editorial. 467 - Fulvio Bertoluzza, Nicola Delmonte, Roberto Menozzi
:
Three-dimensional finite-element thermal simulation of GaN-based HEMTs. 468-473 - Maximilian Dammann, W. Pletschen, Patrick Waltereit
, Wolfgang Bronner
, Rüdiger Quay
, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson:
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. 474-477 - S. Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim:
Physical degradation of GaN HEMT devices under high drain bias reliability testing. 478-483 - C. Gil, Peter Ersland, A. Li:
Determining DC/RF survivability limits of GaAs semiconductor circuits. 484-487 - Charles S. Whitman:
Prediction of transmission line lifetimes over temperature and current density. 488-494
- N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young
, N. Rahim, Durga Misra:
Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion. 495-498 - Jean-Baptiste Sauveplane, Emmanuel Scheid, A. Deram:
On the accurate determination of the thermomechanical properties of micro-scale material: Application to AlSi1% chip metallization of a power semiconductor device. 499-505 - Oi-Ying Wong, Wing-Shan Tam, Oi-Kan Shea, Shiu Hung Cheung, Jun Liu, Chi-Wah Kok, Hei Wong
:
Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor. 506-509 - Zunxian Yang
, Yun Huang, Xinxin Li, Guonan Chen:
Investigation and simulation on the dynamic shock response performance of packaged high-g MEMS accelerometer versus the impurity concentration of the piezoresistor. 510-516 - Jin-Sang Hwang, Myeong-Hwan Kim, Dong-Sung Seo, Jong-Woo Won, Doo-Kyung Moon:
Effects of soft segment mixtures with different molecular weight on the properties and reliability of UV curable adhesives for electrodes protection of plasma display panel (PDP). 517-522 - K. K. Jinka, A. Dasgupta, S. Ganesan, S. Ling:
Chip-on board technology for low temperature environment. Part II: Thermomechanical stresses in encapsulated ball-wedge bond wires. 523-529 - Bo Zhang, Han Ding, Xinjun Sheng
:
Reliability study of board-level lead-free interconnections under sequential thermal cycling and drop impact. 530-536 - Nowshad Amin
, Victor Lim, Foong Chee Seng, Rozaidi Razid, Ibrahim Ahmad:
A practical investigation on nickel plated copper heat spreader with different catalytic activation processes for flip-chip ball grid array packages. 537-543 - Wei-Chih Kuan, S. W. Liang, Chih Chen:
Effect of bump size on current density and temperature distributions in flip-chip solder joints. 544-550 - Mehdi Baradaran Tahoori, Hossein Asadi
, Brian Mullins, David R. Kaeli:
Obtaining FPGA soft error rate in high performance information systems. 551-557 - W. S. Lau, Joy B. H. Tan, B. P. Singh:
Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 degreeC by Ohmic contact recess etching. 558-561 - Jianxin Zhu, Zhihua Chen:
High-accurate computation of wave propagation in complex waveguides for microchip optical interconnections. 562-565
Volume 49, Number 6, June 2009
- Andrzej Dziedzic
:
IMAPS-CPMT Poland 2008 - Guest Editorial. 567-568 - Agata Skwarek
, Krzysztof Witek, Jacek Ratajczak
:
Risk of whiskers formation on the surface of commercially available tin-rich alloys under thermal shocks. 569-572 - Bálint Sinkovics, Olivér Krammer:
Board level investigation of BGA solder joint deformation strength. 573-578 - Selim Achmatowicz, Konrad Kielbasinski
, Elzbieta Zwierkowska, Iwona Wyzkiewicz, Valentinas Baltrusaitis, Malgorzata Jakubowska
:
A new photoimageable platinum conductor. 579-584 - Karol Malecha, Leszek J. Golonka:
Three-dimensional structuration of zero-shrinkage LTCC ceramics for microfluidic applications. 585-591 - Walter Smetana, Bruno Balluch, Günther Stangl, Sigrid Lüftl, Sabine Seidler:
Processing procedures for the realization of fine structured channel arrays and bridging elements by LTCC-Technology. 592-599 - Damian Nowak
, Edward Mis, Andrzej Dziedzic
, Jaroslaw Kita
:
Fabrication and electrical properties of laser-shaped thick-film and LTCC microresistors. 600-606 - Edward Mis, Andrzej Dziedzic
, Witold Mielcarek:
Microvaristors in thick-film and LTCC circuits. 607-613 - C. Belda, M. Fritsch, Claudia Feller
, D. Westphal, G. Jung:
Stability of solid electrolyte based thick-film CO2 sensors. 614-620 - Mathieu Hautefeuille
, Brendan O'Flynn
, Frank H. Peters
, Conor O'Mahony
:
Miniaturised multi-MEMS sensor development. 621-626 - Ryszard Kisiel
, Zbigniew Szczepanski:
Die-attachment solutions for SiC power devices. 627-629
- Alexandre Micol, Carmen Martin, Olivier Dalverny
, Michel Mermet-Guyennet, Moussa Karama
:
Reliability of lead-free solder in power module with stochastic uncertainty. 631-641 - Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis
, Ching-Te Chuang:
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability. 642-649 - Yuan-Wen Hsiao, Ming-Dou Ker:
Low-capacitance ESD protection design for high-speed I/O interfaces in a 130-nm CMOS process. 650-659 - Samrat L. Sabat
, Leandro dos Santos Coelho
, Ajith Abraham:
MESFET DC model parameter extraction using Quantum Particle Swarm Optimization. 660-666 - Meng Liu, Ai-Ping Xian:
Tin whisker growth on bulk Sn-Pb eutectic doping with Nd. 667-672
Volume 49, Number 7, July 2009
- José Ramón González, Manuel Vázquez
, Neftalí Núñez
, Carlos Algora
, Ignacio Rey-Stolle
, Beatriz Galiana
:
Reliability analysis of temperature step-stress tests on III-V high concentrator solar cells. 673-680
- S. Baishya:
A surface potential and quasi-Fermi potential based drain current model for pocket-implanted MOS transistors in subthreshold regime. 681-688 - Adelmo Ortiz-Conde
, Francisco J. García-Sánchez
, Juan Muci, Denise C. Lugo Muñoz, Álvaro D. Latorre Rey, Ching-Sung Ho, Juin J. Liou:
Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction. 689-692 - Te-Kuang Chiang:
A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET's. 693-698 - Rupendra Kumar Sharma
, Ritesh Gupta, Mridula Gupta, R. S. Gupta:
Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect. 699-706 - Juan Antonio Maestro
, Pedro Reviriego:
A method to eliminate the event accumulation problem from a memory affected by multiple bit upsets. 707-715 - P. Thangadurai, W. D. Kaplan, V. Mikhelashvili, Gadi Eisenstein:
The influence of electron-beam irradiation on electrical characteristics of metal-insulator-semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers. 716-720 - Sean W. King
, J. A. Gradner:
Intrinsic stress fracture energy measurements for PECVD thin films in the SiOxCyNz: H system. 721-726 - Huimin Xie, Satoshi Kishimoto, Yanjie Li, Qingjun Liu, Yapu Zhao:
Fabrication of micro-moiré gratings on a strain sensor structure for deformation analysis with micro-moiré technique. 727-733 - Ming-Hwa R. Jen, Lee-Cheng Liu, Yi-Shao Lai:
Electromigration on void formation of Sn3Ag1.5Cu FCBGA solder joints. 734-745 - Asit Kumar Gain, Y. C. Chan, Ahmed Sharif
, N. B. Wong, Winco K. C. Yung
:
Interfacial microstructure and shear strength of Ag nano particle doped Sn-9Zn solder in ball grid array packages. 746-753 - F. X. Che, John H. L. Pang
:
Vibration reliability test and finite element analysis for flip chip solder joints. 754-760 - Andrew Farris, Jianbiao Pan, Albert A. Liddicoat, Michael Krist, Nicholas A. Vickers, Brian J. Toleno, Dan Maslyk, Dongkai Shangguan, Jasbir Bath, Dennis Willie, David A. Geiger:
Drop impact reliability of edge-bonded lead-free chip scale packages. 761-770 - M. Mayer, J. T. Moon, John Persic:
Measuring stress next to Au ball bond during high temperature aging. 771-781 - Sari Merilampi, Teija Laine-Ma, Pekka Ruuskanen
:
The characterization of electrically conductive silver ink patterns on flexible substrates. 782-790 - Robin Alastair Amy, Guglielmo S. Aglietti
, Guy Richardson:
Sensitivity analysis of simplified Printed Circuit Board finite element models. 791-799 - Richárd Berényi:
Prototyping of a reliable 3D flexible IC cube package by laser micromachining. 800-805 - Jin-Sang Hwang, Ju-Yeol Kim, Seok-Chan Kang, Dong-Sung Seo, Younghwan Kwon:
Feasibility study of non-conductive film (NCF) for plasma display panel (PDP) application. 806-812 - Emina I. Milovanovic, Tatjana R. Nikolic
, Mile K. Stojcev, Igor Z. Milovanovic:
Multi-functional systolic array with reconfigurable micro-power processing elements. 813-820
- Ahmed Amin:
Defects in Microelectronic Materials and Devices, Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf (Eds.). Taylor and Francis Group LLC, Boca Raton, FL, USA. 821-822
Volume 49, Number 8, August 2009
- Artur Wymyslowski:
Guest Editorial: 2008 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 823-824 - Pradeep Lall, Madhura Hande, Chandan Bhat, Vikrant More, Rahul Vaidya:
Prognostication of system-state in lead-free electronics equipment under cyclic and steady-state thermo-mechanical loads. 825-838 - Rainer Dudek, Ralf Döring, Christine Bombach, Bernd Michel:
Simulation based analysis of secondary effects on solder fatigue. 839-845 - Jeroen J. M. Zaal, Hendrik Pieter Hochstenbach, Willem D. van Driel, G. Q. Zhang:
Solder interconnect reliability under drop impact loading conditions using High-speed Cold Bump Pull. 846-852 - Olaf van der Sluis
, R. A. B. Engelen, P. H. M. Timmermans, G. Q. Zhang:
Numerical analysis of delamination and cracking phenomena in multi-layered flexible electronics. 853-860 - X. J. Fan, S. W. Ricky Lee
, Q. Han:
Experimental investigations and model study of moisture behaviors in polymeric materials. 861-871 - Kaspar M. B. Jansen, C. Qian, Leo J. Ernst, C. Bohm, A. Kessler, Harald Preu, Matthias Stecher:
Modeling and characterization of molding compound properties during cure. 872-876 - Nancy Iwamoto, Ahila Krishnamoorthy, Richard Spear:
Performance properties in thick film silicate dielectric layers using molecular modeling. 877-883
- R. Fernández-García, Ben Kaczer, Guido Groeseneken
:
A CMOS circuit for evaluating the NBTI over a wide frequency range. 885-891 - Zhen-Ying Hsieh, Mu-Chun Wang
, Chih Chen, Jia-Min Shieh, Yu-Ting Lin, Shuang-Yuan Chen, Heng-Sheng Huang:
Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs. 892-896 - Wei Bian, Jin He, Lining Zhang
, Jian Zhang, Mansun Chan
:
Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs. 897-903 - H. Altuntas, S. Altindal, H. Shtrikman, Suleyman Özçelik
:
A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range. 904-911 - Lu Liu, Jing-Ping Xu, L. L. Chen, Pui To Lai:
A study on the improved programming characteristics of flash memory with Si3N4/SiO2 stacked tunneling dielectric. 912-915 - Ee-Hua Wong
, Yiu-Wing Mai
:
The damped dynamics of printed circuit board and analysis of distorted and deformed half-sine excitation. 916-923 - Seyyed Javad Seyyed Mahdavi
, Karim Mohammadi:
SCRAP: Sequential circuits reliability analysis program. 924-933
Volume 49, Numbers 9-11, September - November 2009
- Dean Lewis, Nathalie Labat:
Editorial. 935-936
- D. M. Tanner:
MEMS reliability: Where are we now? 937-940 - Theo Smedes:
ESD testing of devices, ICs and systems. 941-945
- Corinne Bestory, François Marc, S. Duzellier, Hervé Levi:
Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror. 946-951 - Jean Luc Lefebvre, Christian Gautier, Frédéric Barbier:
Correlation between EOS customer return failure cases and Over Voltage Stress (OVS) test method. 952-957 - Charles Regard, Christian Gautier, Hélène Frémont, Patrick Poirier, Xiaosong Ma, Kaspar M. B. Jansen:
Fast reliability qualification of SiP products. 958-962 - Jean-Baptiste Gros, Geneviève Duchamp, Alain Meresse, Jean-Luc Levant:
Electromagnetic immunity model of an ADC for microcontroller's reliability improvement. 963-966 - Marcel Held, Klaus Fritz:
Comparison and evaluation of newest failure rate prediction models: FIDES and RIAC 217Plus. 967-971 - Mauro Ciappa, Luigi Mangiacapra, Maria Stangoni, Stephan Ott, Wolfgang Fichtner:
Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation. 972-976 - Digeorgia N. da Silva, André Inácio Reis, Renato P. Ribas:
CMOS logic gate performance variability related to transistor network arrangements. 977-981
- Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer
, F. Boulanger:
Process dependence of BTI reliability in advanced HK MG stacks. 982-988 - Nozomu Kawai, Yasuhiro Dohi, Nobuyuki Wakai:
Study for pulse stress NBTI characteristics degradation stress. 989-993 - Yong Woo Jeon, Dae Hyun Ka, Chong-Gun Yu
, Won-Ju Cho, M. Saif Islam, Jong Tae Park:
NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer. 994-997 - Stanislav Tyaginov, Viktor Sverdlov
, Ivan A. Starkov
, Wolfgang Gös, Tibor Grasser
:
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. 998-1002 - Ivica Manic, Danijel Dankovic
, Snezana Djoric-Veljkovic
, Vojkan Davidovic
, Snezana Golubovic, Ninoslav Stojadinovic:
Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. 1003-1007 - Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim
:
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities. 1008-1012 - Ph. Hehenberger, P.-J. Wagner, Hans Reisinger, Tibor Grasser
:
On the temperature and voltage dependence of short-term negative bias temperature stress. 1013-1017 - M. A. Exarchos, George J. Papaioannou
, Jalal Jomaah, Francis Balestra:
Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs. 1018-1023 - Albert Crespo-Yepes
, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría
, Xavier Aymerich
:
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses. 1024-1028 - A. Alaeddine, M. Kadi, K. Daoud, B. Mazari:
Effects of electromagnetic near-field stress on SiGe HBT's reliability. 1029-1032 - Giovanni Busatto
, Giuseppe Currò
, Francesco Iannuzzo
, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. 1033-1037 - Jie Liao, Cher Ming Tan
, Geert Spierings:
Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI). 1038-1043 - Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti
, Pedram Razavi, Jean-Pierre Colinge, Jong Tae Park:
NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs. 1044-1047 - Néstor Berbel, Raúl Fernández-García, Ignacio Gil
:
Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter. 1048-1051 - Enrique Miranda
, Javier Martín-Martínez
, Eamon O'Connor, G. Hughes, P. Casey, Karim Cherkaoui
, S. Monaghan, R. Long, D. O'Connell, Paul K. Hurley
:
Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. 1052-1055 - Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, B. Bertello, B. Villard:
Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories. 1056-1059 - Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, L. Morancho:
Modeling charge variation during data retention of MLC Flash memories. 1060-1063 - Lucas Brusamarello, Gilson I. Wirth
, Roberto da Silva
:
Statistical RTS model for digital circuits. 1064-1069 - M. Roca, Romain Laffont, Gilles Micolau, Frédéric Lalande, O. Pizzuto:
A Modelisation of the temperature dependence of the Fowler-Nordheim current in EEPROM memories. 1070-1073 - Mohamed-Tahar Chentir, J.-B. Jullien, B. Valtchanov, Emilien Bouyssou, Laurent Ventura, Christine Anceau:
Percolation theory applied to PZT thin films capacitors breakdown mechanisms. 1074-1078
- Wolfgang Stadler, Tilo Brodbeck, Reinhold Gärtner, Harald Gossner
:
Do ESD fails in systems correlate with IC ESD robustness? 1079-1085 - Arijit Roy
, Yuejin Hou, Cher Ming Tan
:
Electromigration in width transition copper interconnect. 1086-1089 - Joharsyah Ciptokusumo, Kirsten Weide-Zaage, Oliver Aubel:
Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling. 1090-1095 - Muhammad Bashir, Linda S. Milor
:
A methodology to extract failure rates for low-k dielectric breakdown with multiple geometries and in the presence of die-to-die linewidth variation. 1096-1102 - Marianne Diatta, Emilien Bouyssou, David Trémouilles
, P. Martinez, F. Roqueta, O. Ory, Marise Bafleur:
Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD). 1103-1106 - Philippe Galy, Sylvain Dudit, Michel Vallet, Corinne Richier, Christophe Entringer, Frank Jezequel, E. Petit, J. Beltritti:
Impact and damage on deep sub-micron CMOS technology induced by substrate current due to ESD stress. 1107-1110 - Augusto Tazzoli, Lorenzo Cerati, A. Andreini, Gaudenzio Meneghesso
:
Breakdown characterization of gate oxides in 35 and 70 Å BCD8 smart power technology. 1111-1115
- Masatsugu Yamashita, Chiko Otani
, Sunmi Kim
, Hironaru Murakami
, Masayoshi Tonouchi
, Toru Matsumoto, Yoshihiro Midoh, Katsuyoshi Miura, Koji Nakamae, Kiyoshi Nikawa:
Laser THz emission microscope as a novel tool for LSI failure analysis. 1116-1126 - Joy Y. Liao, Tung Ton, Nathan Slattengren, Steven Kasapi, William K. Lo, Howard L. Marks, Yin S. Ng, Ted R. Lundquist:
Jitter analysis of PLL-generated clock propagation using Jitter Mitigation techniques with laser voltage probing. 1127-1131 - Helmut Köck
, Vladimír Kosel, Christian Djelassi
, Michael Glavanovics
, Dionyz Pogany:
IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures. 1132-1136 - Claus Hartmann, M. Wieberneit:
Investigation on marginal failure characteristics and related defects analysed by soft defect localization. 1137-1142 - C. Godlewski, Vincent Pouget, Dean Lewis, Mathieu Lisart:
Electrical modeling of the effect of beam profile for pulsed laser fault injection. 1143-1147 - Michael Hertl, Diane Weidmann, Jean-Claude Lecomte:
An advanced quality and reliability assessment approach applied to thermal stress issues in electronic components and assemblies. 1148-1152 - Jae-Seong Jeong, Sang-Deuk Park:
Failure analysis of video processor defined as No Fault Found (NFF): Reproduction in system level and advanced analysis technique in IC level. 1153-1157
- Rudolf Schlangen, Reiner Leihkauf, Uwe Kerst, Ted R. Lundquist, Peter Egger, Christian Boit:
Physical analysis, trimming and editing of nanoscale IC function with backside FIB processing. 1158-1164 - A.-K. Tiedemann, K. Kurz, M. Fakhri, Ralf Heiderhoff
, J. C. H. Phang, L. J. Balk:
Finite element analyses assisted Scanning Joule Expansion Microscopy on interconnects for failure analysis and reliability investigations. 1165-1168 - Fulvio Infante, Philippe Perdu, Dean Lewis:
Magnetic microscopy for 3D devices: Defect localization with high resolution and long working distance on complex system in package. 1169-1174 - Gérald Haller, Aziz Machouat, Dean Lewis, Vincent Pouget:
Net integrity checking by optical localization techniques. 1175-1181 - Yasuhiro Mitsui, Takeshi Sunaoshi, Jon C. Lee:
A study of electrical characteristic changes in MOSFET by electron beam irradiation. 1182-1187 - Mario Lanza, Marc Porti
, Montserrat Nafría
, Xavier Aymerich
, G. Ghidini, A. Sebastiani:
Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. 1188-1191 - Roland Biberger, Guenther Benstetter
, Holger Goebel
:
Displacement current sensor for contact and intermittent contact scanning capacitance microscopy. 1192-1195 - Giovanna Mura
, Massimo Vanzi:
Lot reliability issues in commercial off the shelf (COTS) microelectronic devices. 1196-1199
- Jesús A. del Alamo, Jungwoo Joh:
GaN HEMT reliability. 1200-1206 - Nicolo Ronchi, Franco Zanon, Antonio Stocco, Augusto Tazzoli, Enrico Zanoni
, Gaudenzio Meneghesso
:
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test. 1207-1210 - Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy
, Joachim Würfl, Günther Tränkle:
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. 1211-1215 - Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet
, W. Chikhaoui:
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. 1216-1221 - Michele Piazza, Christian Dua, Mourad Oualli, Erwan Morvan, Dominique Carisetti, Frédéric Wyczisk:
Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs. 1222-1225
- Cher Ming Tan
, Boon Khai Eric Chen, Gan Xu, Yuanjie Liu:
Analysis of humidity effects on the degradation of high-power white LEDs. 1226-1230 - Jeung-Mo Kang, Jae-Wook Kim, Jeong-Hyeon Choi, Du-Hyun Kim, Ho-Ki Kwon:
Life-time estimation of high-power blue light-emitting diode chips. 1231-1235 - Nicola Trivellin
, Matteo Meneghini
, Gaudenzio Meneghesso
, Enrico Zanoni
, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda:
Reliability analysis of InGaN Blu-Ray laser diode. 1236-1239 - Eduardo Nogueira, Manuel Vázquez
, Neftalí Núñez
:
Evaluation of AlGaInP LEDs reliability based on accelerated tests. 1240-1243 - Tsung-Lin Chou, Chien-Fu Huang, Cheng-Nan Han, Shin-Yueh Yang, Kuo-Ning Chiang
:
Fabrication process simulation and reliability improvement of high-brightness LEDs. 1244-1249
- Hua Lu, Chris Bailey
, Chunyan Yin:
Design for reliability of power electronics modules. 1250-1255 - Jinyu Jason Ruan, Nicolas Nolhier, George J. Papaioannou
, David Trémouilles
, Vincent Puyal, C. Villeneuve
, T. Idda, Fabio Coccetti, Robert Plana
:
Accelerated lifetime test of RF-MEMS switches under ESD stress. 1256-1259 - S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps:
Characterisation of power modules ceramic substrates for reliability aspects. 1260-1266 - Maxime Berthou, P. Retailleau, Hélène Frémont, Alexandrine Guédon-Gracia, C. Jéphos-Davennel:
Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage. 1267-1272 - Manoubi Auguste Bahi, Hélène Frémont, Jean-Pierre Landesman, Annabelle Gentil, Pascal Lecuyer:
A new methodology for the identification of ball bond degradation during high-temperature aging tests on devices in standard plastic packages. 1273-1277 - Haruka Kubo, Mauro Ciappa, Takayuki Masunaga, Wolfgang Fichtner:
Multiscale simulation of aluminum thin films for the design of highly-reliable MEMS devices. 1278-1282 - Golta Khatibi, W. Wroczewski, Brigitte Weiss, H. Ipser:
A novel accelerated test technique for assessment of mechanical reliability of solder interconnects. 1283-1287 - Peter Jacob, Willy Knecht, Albert Kunz, Giovanni Nicoletti, Thomas Lautenschlager, Moreno Mondada, Damien Pachoud:
Reading distance degradation mechanisms of near-field RFID devices. 1288-1292 - Mirko Bernardoni, Paolo Cova
, Nicola Delmonte, Roberto Menozzi
:
Heat management for power converters in sealed enclosures: A numerical study. 1293-1298 - Y. Liu, F. J. H. G. Kessels, Willem D. van Driel, J. A. S. van Driel, F. L. Sun, G. Q. Zhang:
Comparing drop impact test method using strain gauge measurements. 1299-1303 - Mohamed Matmat, Fabio Coccetti, Antoine Marty, Robert Plana
, Christophe Escriba, Jean-Yves Fourniols, Daniel Estève:
Capacitive RF MEMS analytical predictive reliability and lifetime characterization. 1304-1308 - Usama Zaghloul, George J. Papaioannou
, Fabio Coccetti, Patrick Pons
, Robert Plana
:
Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions. 1309-1314 - S. P. M. Noijen, Olaf van der Sluis
, P. H. M. Timmermans, G. Q. Zhang:
Numerical prediction of failure paths at a roughened metal/polymer interface. 1315-1318
- Uwe Scheuermann:
Reliability challenges of automotive power electronics. 1319-1325 - Philippe Monfraix, Regis Barbaste, Jean Luc Muraro, Claude Drevon, Jean Louis Cazaux:
Quasi hermetic packaging for new generation of spaceborn microwave equipment. 1326-1329 - Donatien Martineau
, Thomas Mazeaud, Marc Legros, Philippe Dupuy, Colette Levade, G. Vanderschaeve:
Characterization of ageing failures on power MOSFET devices by electron and ion microscopies. 1330-1333 - Vezio Malandruccolo, Mauro Ciappa, Hubert Rothleitner, Wolfgang Fichtner:
A new built-in screening methodology to achieve zero defects in the automotive environment. 1334-1340 - B. Bernoux, René Escoffier
, P. Jalbaud, Jean-Marie Dorkel:
Source electrode evolution of a low voltage power MOSFET under avalanche cycling. 1341-1345 - Georg Haberfehlner
, Sergey Bychikhin, Viktor Dubec, Michael Heer, A. Podgaynaya, M. Pfost, Matthias Stecher, Erich Gornik
, Dionyz Pogany:
Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system. 1346-1351 - Fabio Carastro, Alberto Castellazzi
, Jon C. Clare
, M. C. Johnson, Michael J. Bland, Patrick W. Wheeler
:
Reliability considerations in pulsed power resonant conversion. 1352-1357 - Mounira Berkani
, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche:
Estimation of SiC JFET temperature during short-circuit operations. 1358-1362 - Giovanni Busatto
, Carmine Abbate, Francesco Iannuzzo
, P. Cristofaro:
Instable mechanisms during unclamped operation of high power IGBT modules. 1363-1369 - Alexandre Micol, A. Zeanh, T. Lhommeau, Stephane Azzopardi, Eric Woirgard, Olivier Dalverny
, Moussa Karama
:
An investigation into the reliability of power modules considering baseplate solders thermal fatigue in aeronautical applications. 1370-1374 - Laurent Dupont
, Gerard Coquery, K. Kriegel, A. Melkonyan:
Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application. 1375-1380 - F. Molière, B. Foucher, Philippe Perdu, Alain Bravaix
:
Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics. 1381-1385 - Lucio Rossi, Michele Riccio
, Ettore Napoli, Andrea Irace
, Giovanni Breglio
, Paolo Spirito:
1300 V, 2 ms pulse inductive load switching test circuit with 20 ns selectable crowbar intervention. 1386-1390 - H. El Brouji, Olivier Briat
, Jean-Michel Vinassa, Hervé Henry, Eric Woirgard:
Analysis of the dynamic behavior changes of supercapacitors during calendar life test under several voltages and temperatures conditions. 1391-1397 - Yassine Belmehdi, Stephane Azzopardi, A. Benmansour, Jean-Yves Delétage, Eric Woirgard:
Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation. 1398-1403
Volume 49, Number 12, December 2009
- Vesselin K. Vassilev, Wolfgang Stadler:
Editorial ESD reliability special section. 1405-1406 - Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner
, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix
:
Reliability aspects of gate oxide under ESD pulse stress. 1407-1416 - David Alvarez, Kiran V. Chatty, Christian Russ, Michel J. Abou-Khalil, Junjun Li, Robert Gauthier, Kai Esmark, Ralph Halbach, Christopher Seguin:
Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. 1417-1423 - Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs:
Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain. 1424-1432 - Guido Notermans, Olivier Quittard, Anco Heringa, Zeljko Mrcarica, Fabrice Blanc, Hans van Zwol, Theo Smedes, Thomas Keller, Peter C. de Jong:
ESD robust high-voltage active clamps. 1433-1439 - Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles
, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken
:
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. 1440-1446 - Farzan Farbiz, Elyse Rosenbaum:
A new compact model for external latchup. 1447-1454 - Michael Heer, Krzysztof Domanski, Kai Esmark, Ulrich Glaser, Dionyz Pogany, Erich Gornik
, Wolfgang Stadler:
Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. 1455-1464 - Dejan M. Maksimovic, Fabrice Blanc, Guido Notermans, Theo Smedes, Thomas Keller:
An ESD test reduction method for complex devices. 1465-1469 - Tilo Brodbeck, Kai Esmark, Wolfgang Stadler:
CDM tests on interface test chips for the verification of ESD protection concepts. 1470-1475 - Heinrich Wolf, Horst A. Gieser
, Dirk Walter:
Investigating the CDM susceptibility of IC's at package and wafer level by capacitive coupled TLP. 1476-1481
- Lech Hasse, Alicja Konczakowska, Janusz M. Smulko
:
Classification of high-voltage varistors into groups of differentiated quality. 1483-1490 - N. Mohankumar, Binit Syamal, Chandan Kumar Sarkar:
Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications. 1491-1497 - Anastasios A. Katsetos, Andrew C. Brendler:
NBTI model development with regression analysis. 1498-1502 - J. C. Sánchez, Magali Estrada:
Stability of the J-V characteristics of (BEHP-PPV)-co-(MEH-PPV) based light-emitting diodes. 1503-1507 - Servin Rathi, Jyotika Jogi, Mridula Gupta, R. S. Gupta:
Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT. 1508-1514 - Takayuki Hisaka, Hajime Sasaki, Yoichi Nogami, Kenji Hosogi, Naohito Yoshida, Anita A. Villanueva, Jesús A. del Alamo, Shigehiko Hasegawa, Hajime Asahi:
Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions. 1515-1519 - K.-H. Allers, Josef Böck, S. Boguth, K. Goller, Herbert Knapp, Rudolf Lachner:
Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric. 1520-1528 - Jianxin Zhu, Rencheng Song
:
Fast and stable computation of optical propagation in micro-waveguides with loss. 1529-1536 - Mariusz Felczak
, Boguslaw Wiecek
, Gilbert De Mey:
Optimal placement of electronic devices in forced convective cooling conditions. 1537-1545 - Liyu Yang, Joseph B. Bernstein
, T. Koschmieder:
Assessment of acceleration models used for BGA solder joint reliability studies. 1546-1554 - Meng-Fu Shih, Wen-Bin Young:
Experimental study of filling behaviors in the underfill encapsulation of a flip-chip. 1555-1562 - Liyu Yang, Joseph B. Bernstein
:
Failure rate estimation of known failure mechanisms of electronic packages. 1563-1572 - Ravindra V. Kshirsagar, Rajendra M. Patrikar
:
Design of a novel fault-tolerant voter circuit for TMR implementation to improve reliability in digital circuits. 1573-1577 - Eduardas Bareisa, Vacius Jusas
, Kestutis Motiejunas, Rimantas Seinauskas:
Functional delay test generation based on software prototype. 1578-1585 - Kuei-Hu Chang
:
Evaluate the orderings of risk for failure problems using a more general RPN methodology. 1586-1596
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