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Microelectronics Reliability, Volume 42
Volume 42, Number 1, January 2002
- Koen G. Verhaege, Markus P. J. Mergens, Christian C. Russ, John Armer, Phillip Jozwiak:
Novel design of driver and ESD transistors with significantly reduced silicon area. 3-13 - Yoshihiro Takao, Hiroshi Kudo, Junichi Mitani, Yoshiyuki Kotani, Satoshi Yamaguchi, Keizaburo Yoshie, Kazuo Sukegawa, Nobuhisa Naori, Satoru Asai, Michiari Kawano:
A 0.11 mum CMOS technology featuring copper and very low k interconnects with high performance and reliability. 15-25 - Jie-Hua Zhao, Wen-Jie Qi, Paul S. Ho:
Thermomechanical property of diffusion barrier layer and its effect on the stress characteristics of copper submicron interconnect structures. 27-34 - Douglas Brisbin, Prasad Chaparala:
Influence of test techniques on soft breakdown detection in ultra-thin oxides. 35-39 - M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter, G. Guégan:
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. 41-46 - Tetsuya Suemitsu
, Yoshino K. Fukai, Hiroki Sugiyama
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. 47-52 - Giovanna Sozzi
High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study. 53-59 - Jaume Roig, David Flores
Reduction of self-heating effect on SOIM devices. 61-66 - Rodolfo Quintero, Antonio Cerdeira, Adelmo Ortiz-Conde
Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors. 67-76 - Kinuko Mishiro, Shigeo Ishikawa, Mitsunori Abe, Toshio Kumai, Yutaka Higashiguchi, Ken-ichiro Tsubone:
Effect of the drop impact on BGA/CSP package reliability. 77-82 - Yu-Jung Huang, Mei-hui Guo, Shen-Li Fu:
Reliability and routability consideration for MCM placement. 83-91 - Chia-Pin Chiu, James Maveety, Quan A. Tran:
Characterization of solder interfaces using laser flash metrology. 93-100 - Tsorng-Dih Yuan, Bor Zen Hong, Howard H. Chen, Li-Kong Wang:
Integrated electro-thermomechanical analysis of nonuniformly chip-powered microelectronic system. 101-108 - Noel Y. A. Shammas, M. P. Rodriguez, F. Masana:
A simple method for evaluating the transient thermal response of semiconductor devices. 109-117 - Christine Naito, Michael Todd:
The effects of curing parameters on the properties development of an epoxy encapsulant material. 119-125 - C.-H. Chiao, W. Y. Wang:
Reliability improvement of fluorescent lamp using grey forecasting model. 127-134 - Seok Hwan Moon, Gunn Hwang, Ho Gyeong Yun, Tae Goo Choy, Young I. I. Kang:
Improving thermal performance of miniature heat pipe for notebook PC cooling. 135-140 - Shashi Paul
A reliability of different metal contacts with amorphous carbon. 141-143 - Jin He, Xing Zhang, Ru Huang, Yangyuan Wang:
Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. 145-148 - F. S. Lomeli, Antonio Cerdeira:
Precise SPICE macromodel applied to high-voltage power MOSFET. 149-152 - Hu Guijun, Shi Jiawei, Zhang Shumei, Zhang Fenggang:
The correlation between the low-frequency electrical noise of high-power quantum well lasers and devices surface non-radiative current. 153-156
Volume 42, Number 2, February 2002
- Elena Atanassova, Albena Paskaleva
Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs. 157-173 - Lingfeng Mao
The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures. 175-181 - Lei Du, Yiqi Zhuang, Yong Wu:
1/fgamma Noise separated from white noise with wavelet denoising. 183-188 - Nobuyuki Sano, Kazuya Matsuzawa, Mikio Mukai, Noriaki Nakayama:
On discrete random dopant modeling in drift-diffusion simulations: physical meaning of 'atomistic' dopants. 189-199 - Shinya Ito, Hiroaki Namba, Tsuyoshi Hirata, Koichi Ando, Shin Koyama, Nobuyuki Ikezawa, Tatsuya Suzuki, Takehiro Saitoh, Tadahiko Horiuchi:
Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance. 201-209 - Young S. Chung, Bob Baird:
Power capability limits of power MOSFET devices. 211-218 - Takeshi Yanagisawa, Takeshi Kojima, Tadamasa Koyanagi, Kiyoshi Takahisa, Kuniomi Nakamura:
Changes in the characteristics of CuInGaSe2 solar cells under light irradiation and during recovery: degradation analysis by the feeble light measuring method. 219-223 - O. Jeandupeux, V. Marsico, A. Acovic, P. Fazan, H. Brune, K. Kern:
Use of scanning capacitance microscopy for controlling wafer processing. 225-231 - Philip M. Fabis:
The processing technology and electronic packaging of CVD diamond: a case study for GaAs/CVD diamond plastic packages. 233-252 - K. Jonnalagadda:
Reliability of via-in-pad structures in mechanical cycling fatigue. 253-258 - M. S. Kilijanski, Yu-Lin Shen:
Analysis of thermal stresses in metal interconnects with multilevel structures. 259-264 - Andrew J. G. Strandjord, Scott Popelar, Christine Jauernig:
Interconnecting to aluminum- and copper-based semiconductors (electroless-nickel/gold for solder bumping and wire bonding). 265-283 - Yu-Lung Lo, Chih-Chiang Tsao:
Wirebond profiles characterized by a modified linkage-spring model which includes a looping speed factor. 285-291 - Jinlin Wang:
Underfill of flip chip on organic substrate: viscosity, surface tension, and contact angle. 293-299 - Rajendra D. Pendse, Peng Zhou:
Methodology for predicting solder joint reliability in semiconductor packages. 301-305
Volume 42, Number 3, March 2002
- Guenther Benstetter
A review of ULSI failure analysis techniques for DRAMs 1. Defect localization and verification. 307-316 - Hei Wong:
Recent developments in silicon optoelectronic devices. 317-326 - Domenico Caputo
Investigation and modeling of stressed thermal oxides. 327-333 - Fen Chen, Rolf-Peter Vollertsen, Baozhen Li, Dave Harmon, Wing L. Lai:
A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride-oxide dielectrics. 335-341 - Juin J. Liou, R. Shireen, Adelmo Ortiz-Conde, Francisco J. García-Sánchez
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs. 343-347 - Yongseok Ahn, Sanghyun Lee, Gwanhyeob Koh, Taeyoung Chung, Kinam Kim:
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon. 349-354 - Yiqi Zhuang, Lei Du:
1/f noise as a reliability indicator for subsurface Zener diodes. 355-360 - Alina Caddemi
Temperature-dependent noise characterization and modeling of on-wafer microwave transistors. 361-366 - De-Shin Liu, Chin-Yu Ni:
A thermo-mechanical study on the electrical resistance of aluminum wire conductors. 367-374 - T. Y. Lin, W. S. Leong, K. H. Chua, R. Oh, Y. Miao, J. S. Pan, J. W. Chai:
The impact of copper contamination on the quality of the second wire bonding process using X-ray photoelectron spectroscopy method. 375-380 - C. F. Luk, Y. C. Chan, K. C. Hung:
Development of gold to gold interconnection flip chip bonding for chip on suspension assemblies. 381-389 - Joachim Kloeser, Paradiso Coskina, Rolf Aschenbrenner, Herbert Reichl:
Bump formation for flip chip and CSP by solder paste printing. 391-398 - T. Alander, S. Nurmi, Pekka Heino, Eero Ristolainen:
Impact of component placement in solder joint reliability. 399-406 - J. D. Wu, S. H. Ho, C. Y. Huang, C. C. Liao, P. J. Zheng, S. C. Hung:
Board level reliability of a stacked CSP subjected to cyclic bending. 407-416 - Didier Cottet, Michael Scheffler, Gerhard Tröster:
A novel, zone based process monitoring method for low cost MCM-D substrates manufactured on large area panels. 417-426 - Pawel Grybos, Wladyslaw Dabrowski, Pawel Hottowy, Robert Szczygiel
Multichannel mixed-mode IC for digital readout of silicon strip detectors. 427-436 - Asad A. Ismaeel, R. Bhatnagar, Rajan Mathew:
On-line testable data path synthesis for minimizing testing time. 437-453 - S. Chakraborty, P. T. Lai, Paul C. K. Kwok
MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC. 455-458 - F. Saigné, Olivier Quittard, Laurent Dusseau, F. Joffre, Coumar Oudéa, J. Fesquet, Jean Gasiot:
Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements. 459-461
Volume 42, Numbers 4-5, April - May 2002
- Ninoslav Stojadinovic, Michael G. Pecht
Editorial. 463 - Hiroshi Iwai, Shun'ichiro Ohmi:
Silicon integrated circuit technology from past to future. 465-491 - Eiji Takeda, Eiichi Murakami, Kazuyoshi Torii, Yutaka Okuyama, Eishi Ebe, Kenji Hinode, Shin'ichiro Kimura:
Reliability issues of silicon LSIs facing 100-nm technology node. 493-506 - Gilbert De Mey:
A thermodynamic limit for digital electronics. 507-510 - S. Nakajima, S. Nakamura, K. Kuji, T. Ueki, T. Ajioka, T. Sakai:
Construction of a cost-effective failure analysis service network--microelectronic failure analysis service in Japan. 511-521 - Daniel M. Fleetwood:
Effects of hydrogen transport and reactions on microelectronics radiation response and reliability. 523-541 - Kinam Kim, Gitae Jeong, Chan-Woong Chun, Sam-Jin Hwang:
DRAM reliability. 543-553 - Ben Kaczer, Robin Degraeve, Mahmoud Rasras
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. 555-564 - M. K. Radhakrishnan, Kin Leong Pey
Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. 565-571 - Gérard Ghibaudo, T. Boutchacha:
Electrical noise and RTS fluctuations in advanced CMOS devices. 573-582 - Adelmo Ortiz-Conde
A review of recent MOSFET threshold voltage extraction methods. 583-596 - Hei Wong
Defects in silicon oxynitride gate dielectric films. 597-605 - Masazumi Amagai:
Mechanical reliability in electronic packaging. 607-627 - Vladimír Székely:
Enhancing reliability with thermal transient testing. 629-640 - Dawn A. Thomas, Ken Ayers, Michael G. Pecht
The "trouble not identified" phenomenon in automotive electronics. 641-651 - Mauro Ciappa:
Selected failure mechanisms of modern power modules. 653-667 - Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs. 669-677 - Mitsuo Fukuda:
Optical semiconductor device reliability. 679-683 - Gaudenzio Meneghesso
Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors. 685-708 - Andrzej Dziedzic
Electrical and structural investigations in reliability characterisation of modern passives and passive integrated components. 709-719 - Chun-Yen Chang, Jiong-Guang Su, Shyh-Chyi Wong, Tiao-Yuan Huang, Yuan-Chen Sun:
RF CMOS technology for MMIC. 721-733 - Arokia Nathan, Byung-kyu Park, Qinghua Ma, Andrei Sazonov
Amorphous silicon technology for large area digital X-ray and optical imaging. 735-746 - N. Tosic Golo, Fred G. Kuper, Ton J. Mouthaan:
Zapping thin film transistors. 747-765 - C. F. Luk, Y. C. Chan, K. C. Hung:
Application of adhesive bonding techniques in hard disk drive head assembly. 767-777 - B. K. Jones:
Logarithmic distributions in reliability analysis. 779-786 - Juin J. Liou, Qiang Zhang, John McMacken, J. Ross Thomson, Kevin Stiles, Paul Layman:
Statistical modeling of MOS devices for parametric yield prediction. 787-795 - V. S. Pershenkov, S. V. Avdeev, A. S. Tsimbalov, M. N. Levin, V. V. Belyakov, D. V. Ivashin, A. Y. Slesarev, A. Y. Bashin, Gennady I. Zebrev
Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response. 797-804
Volume 42, Number 6, June 2002
- Wolfgang Wondrak:
Special Section on Reliability of Passive Components. 805 - Reiner W. Kuehl:
Reliability of thin-film resistors: impact of third harmonic screenings. 807-813 - Jonathan L. Paulsen, Erik K. Reed:
Highly accelerated lifetesting of base-metal-electrode ceramic chip capacitors. 815-820 - Erik K. Reed, Jonathan L. Paulsen:
Impact of circuit resistance on the breakdown voltage of tantalum chip capacitors. 821-827 - Jocelyn Siplon, Gary J. Ewell, Thomas Gibson:
ESR concerns in tantalum chip capacitors exposed to non-oxygen-containing environments. 829-834 - A. Dehbi, Wolfgang Wondrak, Yves Ousten, Yves Danto:
High temperature reliability testing of aluminum and tantalum electrolytic capacitors. 835-840 - Jan Pavelka, Josef Sikula, Petr Vasina, Vlasta Sedlakova
Noise and transport characterisation of tantalum capacitors. 841-847 - Petr Vasina, T. Zednicek, Josef Sikula, Jan Pavelka:
Failure modes of tantalum capacitors made by different technologies. 849-854 - Gregory L. Amorese:
Minimizing equivalent series resistance measurement errors. 855-860 - Markus P. J. Mergens:
On-Chip ESD. 861 - Ming-Dou Ker, Chyh-Yih Chang:
ESD protection design for CMOS RF integrated circuits using polysilicon diodes. 863-872 - Cynthia A. Torres, James W. Miller, Michael Stockinger, Matthew D. Akers, Michael G. Khazhinsky, James C. Weldon:
Modular, portable, and easily simulated ESD protection networks for advanced CMOS technologies. 873-885 - Craig Salling, Jerry Hu, Jeff Wu, Charvaka Duvvury, Roger Cline, Rith Pok:
Development of substrate-pumped nMOS protection for a 0.13 mum technology. 887-899 - Bart Keppens, Vincent De Heyn, M. Natarajan Iyer, Vesselin K. Vassilev, Guido Groeseneken
Significance of the failure criterion on transmission line pulse testing. 901-907 - Jon Barth, John Richner:
Correlation considerations: Real HBM to TLP and HBM testers. 909-917 - Leo G. Henry, Jon Barth, Hugh Hyatt, Tom Diep, Michael Stevens:
Charged device model metrology: limitations and problems. 919-927 - P. G. Han, Hei Wong
A novel approach for fabricating light-emitting porous polysilicon films. 929-933 - Enrique Miranda
Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression. 935-941 - Thomas D. Moore, John L. Jarvis:
The effects of in-plane orthotropic properties in a multi-chip ball grid array assembly. 943-949 - Masazumi Amagai, Masako Watanabe, Masaki Omiya, Kikuo Kishimoto, Toshikazu Shibuya:
Mechanical characterization of Sn-Ag-based lead-free solders. 951-966 - Afaq Ahmad
Investigation of a constant behavior of aliasing errors in signature analysis due to the use of different ordered test-patterns in LFSR based testing techniques. 967-974 - Tomasz Garbolino
Efficient test pattern generators based on specific cellular automata structures. 975-983 - Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan:
Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction. 985-989 - Lingfeng Mao
Erratum to "The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures" [Microelectronics Reliability 2001;41: 927-931]. 991 - Ninoslav Stojadinovic:
Dependability of Engineering Systems: J.M. Nahman, Springer-Verlag, Berlin, Heidelberg, New York, 2002, 192 pages. 993
Volume 42, Number 7, July 2002
- Wallace T. Anderson, Roberto Menozzi
Editorial. 995 - Phil F. Marsh, Colin S. Whelan, William E. Hoke, Robert E. Leoni III, Thomas E. Kazior:
Reliability of metamorphic HEMTs on GaAs substrates. 997-1002 - Frank Gao, Ravi Chanana, Tom Nicholls:
The effects of buffer thickness on GaAs MESFET characteristics: channel-substrate current, drain breakdown, and reliability. 1003-1010 - Tim Henderson:
Modeling gallium arsenide heterojunction bipolar transistor ledge variations for insight into device reliability. 1011-1020 - K. Ikossi, William S. Rabinovich, D. Scott Katzer
Multiple quantum well PIN optoelectronic devices and a method of restoring failed device characteristics. 1021-1028 - William J. Roesch:
Methods of reducing defects in GaAs ICs. 1029-1036 - Hongxia Liu, Yue Hao, Jiangang Zhu:
A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs. 1037-1044 - P. M. Igic, P. A. Mawby, M. S. Towers, W. M. Jamal, S. G. J. Batcup:
Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model. 1045-1052 - Oliver Perat, Jean-Marie Dorkel, Emmanuel Scheid, Pierre Temple-Boyer, Y. S. Chung, A. Peyre-Lavigne, M. Zecri, Patrick Tounsi:
Characterization method of thermomechanical parameters for microelectronic materials. 1053-1058 - Marcin Janicki
Transient thermal analysis of multilayered structures using Green's functions. 1059-1064 - M. O. Alam, Yan Cheong Chan, K. C. Hung:
Reliability study of the electroless Ni-P layer against solder alloy. 1065-1073 - Paavo Jalonen, Aulis Tuominen:
The effect of sputtered interface metallic layers on reinforced core laminate making build-up structures. 1075-1079 - S. H. Fan, Y. C. Chan:
Effect of misalignment on electrical characteristics of ACF joints for flip chip on flex applications. 1081-1090 - Fred D. Barlow
Low cost flex substrates for miniaturized electronic assemblies. 1091-1099 - Octavio A. Leon, Gilbert De Mey, Erik Dick
Study of the optimal layout of cooling fins in forced convection cooling. 1101-1111 - B. Trégon, Yves Ousten, Yves Danto, Laurent Béchou, Bernard Parmentier:
Behavioral study of passive components and coating materials under isostatic pressure and temperature stress conditions. 1113-1120 - Wen Lea Pearn, C. H. Ko, K. H. Wang:
A multiprocess performance analysis chart based on the incapability index Cpp: an application to the chip resistors. 1121-1125 - Khalil I. Arshak, D. P. Egan, K. Phelan:
Using statistical design of experiment to investigate the effect of firing parameters on the electrical and magnetic properties of Mn-Zn ferrite. 1127-1132 - A. T. Kollias, John N. Avaritsiotis:
Analysis and design of thin film resonator ladder filters. 1133-1140 - T. Cibáková, Mária Fischerová, Elena Gramatová, Wieslaw Kuzmicz
Hierarchical test generation for combinational circuits with real defects coverage. 1141-1149 - Mile K. Stojcev:
The Computer Engineering Handbook; Vojin Oklobdzija. CRC Press, Boca Raton, 2002. Hardcover, pp 1338, ISBN 0-8493-0885-2. 1151
Volume 42, Number 8, August 2002
- Marise Bafleur:
In the memory of Georges Charitat. 1153-1154 - B. Foucher, J. Boullié, B. Meslet, D. Das:
A review of reliability prediction methods for electronic devices. 1155-1162 - Leon Lantz, Seongdeok Hwang, Michael G. Pecht
Characterization of plastic encapsulant materials as a baseline for quality assessment and reliability testing. 1163-1170 - Elena Atanassova, Dejan Spasov:
Thermal Ta2O5--alternative to SiO2 for storage capacitor application. 1171-1177 - Wai-Keung Fong, C. F. Zhu, B. H. Leung, C. Surya, B. Sundaravel, E. Z. Luo, Jianbin Xu
Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy. 1179-1184 - Y. C. Chan, D. Y. Luk:
Effects of bonding parameters on the reliability performance of anisotropic conductive adhesive interconnects for flip-chip-on-flex packages assembly I. Different bonding temperature. 1185-1194 - Y. C. Chan, D. Y. Luk:
Effects of bonding parameters on the reliability performance of anisotropic conductive adhesive interconnects for flip-chip-on-flex packages assembly II. Different bonding pressure. 1195-1204 - Hua Lu, K. C. Hung, Stoyan Stoyanov
No-flow underfill flip chip assembly--an experimental and modeling analysis. 1205-1212 - P. Bojta, P. Németh, Gábor Harsányi
Searching for appropriate humidity accelerated migration reliability tests methods. 1213-1218 - Huimin Xie, Anand K. Asundi
High resolution AFM scanning Moiré method and its application to the micro-deformation in the BGA electronic package. 1219-1227 - Wei Huang, James M. Loman, Bülent Sener:
Study of the effect of reflow time and temperature on Cu-Sn intermetallic compound layer reliability. 1229-1234 - Jann-Pygn Chen, Wen Lea Pearn:
Testing process performance based on the yield: an application to the liquid-crystal display module. 1235-1241 - M. Dhifi:
A novel simulation technique for testing analog ICs. 1243-1248
Volume 42, Numbers 9-11, September - November 2002
- Fausto Fantini, Massimo Vanzi:
Editorial. 1249 - Hiroshi Iwai, S. Ohmi:
Trend of CMOS downsizing and its reliability. 1251-1258 - Michael G. Pecht, Diganta Das, Arun Ramakrishnan:
The IEEE standards on reliability program and reliability prediction methods for electronic equipment. 1259-1266 - Wolfgang Stadler, Kai Esmark, Harald Gossner
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. 1267-1274 - Franz Zängl, Harald Gossner
Case study of a technology transfer causing ESD problems. 1275-1280 - M. Blaho, Dionyz Pogany, L. Zullino, A. Andreini, Erich Gornik
Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions. 1281-1286 - M. S. B. Sowariraj, Theo Smedes, Cora Salm
The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress. 1287-1292 - Gaudenzio Meneghesso, A. Cocco, Giovanna Mura
Backside Failure Analysis of GaAs ICs after ESD tests. 1293-1298 - Philippe Galy, V. Berland, B. Foucher, A. Guilhaume, J. P. Chante, S. Bardy, F. Blanc:
Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse. 1299-1302 - Luca Sponton, Lorenzo Cerati, Giuseppe Croce, Giovanna Mura
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology. 1303-1306 - Jean-Luc Goudard, P. Berthier, X. Boddaert, Dominique Laffitte, J. Périnet:
New qualification approach for optoelectronic components. 1307-1310 - M. Giglio, G. Martines, Giovanna Mura
An automated lifetest equipment for optical emitters. 1311-1315 - Massimo Vanzi, Giulia Salmini, R. Pastorelli, S. Pessina, Paola Furcas:
Reliability tests on WDM filters. 1317-1321 - François Caloz, Daniel Ernst, Patrick Rossini, Laura Gherardi, Lisa Grassi, Jean Arnaud:
Reliability of optical connectors - Humidity behavior of the adhesive. 1323-1328 - Klaus Duerr, Reinhard Pusch, Gottfried Schmitt:
Reliability Problems of Passive Optical Devices and Modules after Mechanical, Thermal and Humidity Testing. 1329-1332 - T. Tomasi, Ilaria De Munari, V. Lista, L. Gherardi, A. Righetti, M. Villa:
Passive optical components: from degradation data to reliability assessment - preliminary results. 1333-1338 - Luc Tielemans, R. Rongen, Ward De Ceuninck:
How reliable are reliability tests? 1339-1345 - Graziella Scandurra
True constant temperature MTF test system for the characterization of electromigration of thick Cu interconnection lines. 1347-1351 - B. Mongellaz, François Marc, Noëlle Milet-Lewis, Yves Danto:
Contribution to ageing simulation of complex analogue circuit using VHDL-AMS behavioural modelling language. 1353-1358 - R. Petersen, Ward De Ceuninck, Jan D'Haen
Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology. 1359-1363 - A. Mervic, A. Lanzani, M. Menchise, P. Serra, D. Gerosa:
Contact resistivity instability in embedded SRAM memory. 1365-1368 - E. Carvou, F. Le Bihan, Anne Claire Salaün, R. Rogel, Olivier Bonnaud, Yannick Rey-Tauriac, Xavier Gagnard, L. Roland:
Reliability improvement of high value doped polysilicon-based resistors. 1369-1372 - Marco Mugnaini, Marcantonio Catelani, G. Ceschini, A. Masi, F. Nocentini:
Pseudo Time-Variant parameters in centrifugal compressor availability studies by means of Markov models. 1373-1376 - G. Ceschini, Marco Mugnaini, A. Masi:
A reliability study for a submarine compression application. 1377-1380 - Marcantonio Catelani, R. Nicoletti:
A Custom-designed automatic measurement system for acquisition and management of reliability data. 1381-1384 - Yong-Ha Song, Myoung-Lae Park, Gye-Won Jung, Taek-Soo Kim:
A study of advanced layout verification to prevent leakage current failure during power down mode operation. 1385-1388 - V. Lista, P. Garbossa, T. Tomasi, Mattia Borgarino, Fausto Fantini, L. Gherardi, A. Righetti, M. Villa:
Degradation Based Long-Term Reliability Assessment for Electronic Components in Submarine Applications. 1389-1392 - Piero Battista
On the reliability of instruments for environmental monitoring: some practical considerations. 1393-1396 - Daniel M. Fleetwood:
Hydrogen-related reliability issues for advanced microelectronics. 1397-1403 - B. Cretu
Origin of hot carrier degradation in advanced nMOSFET devices. 1405-1408 - E. Andries, R. Dreesen, Kris Croes, Ward De Ceuninck, Luc De Schepper, Guido Groeseneken
Statistical aspects of the degradation of LDD nMOSFETs. 1409-1413 - H. V. Nguyen, Cora Salm
Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling. 1415-1420 - H. V. Nguyen, Cora Salm
Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime. 1421-1425 - Ruggero Feruglio, Fernanda Irrera, Bruno Riccò:
Microscopic aspects of defect generation in SiO2. 1427-1432 - Mahesh S. Krishnan, Viktor Kol'dyaev, Eiji Morifoji, Koji Miyamoto, Tomasz Brozek, Xiaolei Li:
Series resistance degradation due to NBTI in PMOSFET. 1433-1438 - S. Gamerith, M. Pölzl:
Negative bias temperature stress on low voltage p-channel DMOS transistors and the role of nitrogen. 1439-1443 - Rosana Rodríguez, James H. Stathis, Barry P. Linder, Steven P. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, Azeez J. Bhavnagarwala, Salvatore Lombardo
Analysis of the effect of the gate oxide breakdown on SRAM stability. 1445-1448 - Bernadette Domengès, P. Schwindenhammer, Patrick Poirier, Felix Beaudoin, Philippe Descamps:
Comprehensive failure analysis of leakage faults in bipolar transistors. 1449-1452 - A. Muehlhoff:
Inversion of degradation direction of n-channel MOS-FETs in off-state operation. 1453-1456 - Hajdin Ceric
Simulative prediction of the resistance change due to electromigration induced void evolution. 1457-1460 - A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, Lars Rebohle
Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection. 1461-1464 - Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic
Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs. 1465-1468 - M. R. Carriero, Stefano Di Pascoli, Giuseppe Iannaccone:
Simulation of failure time distributions of metal lines under electromigration. 1469-1472 - G. Ghidini, D. Brazzelli:
Evaluation methodology of thin dielectrics for non-volatile memory application. 1473-1480 - Salvatore Lombardo
Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. 1481-1484 - Stefano Aresu, Ward De Ceuninck, R. Dreesen, Kris Croes, E. Andries, Jean Manca
High-resolution SILC measurements of thin SiO2 at ultra low voltages. 1485-1489 - E. Viganò, A. Ghetti
Post-breakdown characterization in thin gate oxides. 1491-1496 - David Roy, S. Bruyère, E. Vincent, Frederic Monsieur:
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. 1497-1500 - Joan Marc Rafí
Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides. 1501-1504 - Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Gate oxide Reliability assessment optimization. 1505-1508 - Paolo Caprara, A. Barcella, M. Beltramello, C. Brambilla, S. Cereda, Carlo Caimi, Valentina Contin, V. Daniele, M. Fontana, P. Lucarno:
Analyses on NVM Circuitry Delay Induced by Source & Drain BF2 Implant. 1509-1511 - X. Blasco, Montserrat Nafría
Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures. 1513-1516 - Jean Augereau
Acoustic analysis of an assembly: Structural identification by signal processing (wavelets). 1517-1522 - C. Passagrilli, L. Gobbato, R. Tiziani:
Reliability of Au/Al bonding in plastic packages for high temperature (200degreeC) and high current applications. 1523-1528 - P. Guilbault, Eric Woirgard, Christian Zardini, D. Lambert:
Reliability study of the assembly of a large EGA on a build up board using thermo-mechanical simulations. 1529-1533 - Mohandass Sivakumar, Kripesh Vaidyanathan, Chong Ser Choong, Tai Chong Chai, Loon Aik Lim:
Reliability of Wire Bonding on Low-k Dielectric Material in Damascene Copper Integrated Circuits PBGA Assembly. 1535-1540 - Giulio Di Giacomo, Stefano Oggioni:
Reliability of Flip Chip Applications with Ceramic and Organic Chip Carriers. 1541-1546 - Anne Seppälä
Failure mechanisms of adhesive flip chip joints. 1547-1550 - Geneviève Duchamp, Yves Ousten, Yves Danto:
Evaluation of a micropackaging analysis technique by highfrequency microwaves. 1551-1554 - Alexandrine Guédon, Eric Woirgard, Christian Zardini:
Evaluation of lead-free soldering for automotive applications. 1555-1558 - Laura Frisk, J. Järvinen, R. Ristolainen:
Chip on flex attachment with thermoplastic ACF for RFID applications. 1559-1562 - Cezary Sydlo, M. Saglam, Bastian Mottet, Manuel Rodríguez-Gironés, Hans L. Hartnagel:
Reliability investigations on HBV using pulsed electrical stress. 1563-1568 - Maximilian Dammann, F. Benkhelifa, M. Meng, W. Jantz:
Reliability of Metamorphic HEMTs for Power Applications. 1569-1573 - Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust:
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. 1575-1580 - Felix Beaudoin, D. Carisetti, Romain Desplats, Philippe Perdu, Dean Lewis, J. C. Clement:
Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices. 1581-1585 - Paolo Cova
High-field step-stress and long term stability of PHEMTs with different gate and recess lengths. 1587-1592 - V. Ichizli, Manuel Rodríguez-Gironés, L. Marchand, C. Garden, Oleg Cojocari, Bastian Mottet, Hans L. Hartnagel:
Process Control and Failure Analysis Implementation for THz Schottky-based components. 1593-1596 - Norbert Seliger
Reliable power electronics for automotive applications. 1597-1604 - Alberto Castellazzi
Reliability analysis of power MOSFET's with the help of compact models and circuit simulation. 1605-1610 - R. Tiziani, G. Passoni, G. Santospirito:
Adhesive die attach for power application: Performance and reliability in plastic package. 1611-1616 - Sebastiano Russo, Romeo Letor, Orazio Viscuso, Lucia Torrisi, Gianluigi Vitali:
Fast thermal fatigue on top metal layer of power devices. 1617-1622 - Sudha Gopalan, Benno H. Krabbenborg, Jan-Hein Egbers, Bart van Velzen, Rene Zingg:
Reliability of power transistors against application driven temperature swings. 1623-1628 - Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Kaminksy:
The Reliability of New Generation Power MOSFETs in Radiation Environment. 1629-1634 - Giovanni Busatto, B. Cascone, Luigi Fratelli
Non-destructive high temperature characterisation of high-voltage IGBTs. 1635-1640 - Guy Lefranc, T. Licht, Gerhard Mitic:
Properties of solders and their fatigue in power modules. 1641-1646 - Masanori Usui
Characterization of Trench MOS Gate Structures Utilizing Photon Emission Microscopy. 1647-1652 - Mauro Ciappa, Flavio Carbognani, Paolo Cova
A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors. 1653-1658 - Giuseppe Currò
Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability. 1659-1662 - Stéphane Moreau, Stéphane Forster, Thierry Lequeu, Robert Jérisian:
Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2. 1663-1666 - Chun-Cheng Tsao, Bill Thompson, Ted R. Lundquist:
Imaging and Material Analysis from Sputter-Induced Light Emission Using Coaxial Ion-Photon Column. 1667-1672 - Dionyz Pogany, Ján Kuzmík, J. Darmo
Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. 1673-1677 - Katsuyoshi Miura, Koji Nakamae, Hiromu Fujioka:
CAD navigation system, for backside waveform probing of CMOS devices. 1679-1684 - Anne-Dorothea Müller, Falk Müller, Jürgen Middeke, Jan Mehner
Double-cantilever device for Atomic Force Microscopy in dynamic noncontact-mode. 1685-1688 - Franco Stellari, Peilin Song, James C. Tsang, Moyra K. McManus, Mark B. Ketchen:
Optical diagnosis of excess IDDQ in low power CMOS circuits. 1689-1694 - M. Neinhüs, Rainer Weber, Ulf Behnke, Wolfgang Mertin
Contactless current and voltage measurements in integrated circuits by using a needle sensor. 1695-1700 - Maria Stangoni, Mauro Ciappa, Marco Buzzo, Markus Leicht, Wolfgang Fichtner:
Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction. 1701-1706 - Jon C. Lee, C. H. Chen, David Su, J. H. Chuang:
Investigation of Sensitivity Improvement on Passive Voltage Contrast for Defect Isolation. 1707-1710 - T. H. Lee, X. Guo, G. D. Shen, Yuan Ji, G. H. Wang, J. Y. Du, X. Z. Wang, G. Gao, A. Altes, L. J. Balk:
Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting Diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM). 1711-1714 - C. Caprile, Ilaria De Munari, Maurizio Impronta, Simona Podda, Andrea Scorzoni, Massimo Vanzi:
A specimen-current branching approach for FA of long Electromigration test lines. 1715-1718 - R. F. Szeloch, Teodor P. Gotszalk, Pawel Janus:
Scanning Thermal Microscopy in Microsystem Reliability Analysis. 1719-1722 - C. Giret, D. Bru, D. Faure, C. Ali, M. Razani, D. Gobled:
Electrical characteristics measurement of transistors by 4 tips-0.2 micron probing technique in Semiconductor Failure Analysis. 1723-1727 - Felix Beaudoin, Gérald Haller, Philippe Perdu, Romain Desplats, Thomas Beauchêne, Dean Lewis:
Reliability Defect Monitoring with Thermal Laser Stimulation: Biased Versus Unbiased. 1729-1734 - Janet E. Semmens, Lawrence W. Kessler:
Application of Acoustic Frequency Domain Imaging for the Evaluation of Advanced Micro Electronic Packages. 1735-1740 - Olivier Crépel, Felix Beaudoin, Lionel Dantas de Morais, Gérald Haller, C. Goupil, Philippe Perdu, Romain Desplats, Dean Lewis:
Backside Hot Spot Detection Using Liquid Crystal Microscopy. 1741-1746 - N. Bicaïs-Lépinay, F. André, R. Pantel, S. Jullian, Alain Margain, L. F. Tz. Kwakman:
Lift-out techniques coupled with advanced TEM characterization methods for electrical failure analysis. 1747-1752 - Joachim C. Reiner, Philippe Gasser, Urs Sennhauser:
Novel FIB-based sample preparation technique for TEM analysis of ultra-thin gate oxide breakdown. 1753-1757 - Claus Hartmann, Rainer Weber, Wolfgang Mertin
Simultaneous IC-internal voltage and current measurements via a multi lever Scanning Force Microscope. 1759-1762 - Olivier Crépel, C. Goupil, Bernadette Domengès, Philippe Descamps, Philippe Perdu, A. Doukkali:
Magnetic field measurements for Non Destructive Failure Analysis. 1763-1766 - D. Faure, C. A. Waggoner:
A New sub-micro probing technique for failure analysis in integrated circuits. 1767-1770 - Roland Müller-Fiedler, Ulrich Wagner, Winfried Bernhard:
Reliability of MEMS - a methodical approach. 1771-1776 - M. Dardalhon, Vincent Beroulle, Laurent Latorre, Pascal Nouet
Reliability analysis of CMOS MEMS structures obtained by Front Side Bulk Micromachining. 1777-1782 - Alexander Polyakov, Marian Bartek, Joachim N. Burghartz:
Mechanical Reliability of Silicon Wafers with Through-Wafer Vias for Wafer-Level Packaging. 1783-1788 - Ingrid De Wolf, W. Merlijn van Spengen:
Techniques to study the reliability of metal RF MEMS capacitive switches. 1789-1794 - Olivier Millet, Dominique Collard, Lionel Buchaillot:
Reliability of polysilicon microstructures: in situ test benches. 1795-1800 - Alexander Frey, Franz Hofmann, R. Peters, Birgit Holzapfl, Meinrad Schienle, Christian Paulus, Petra Schindler-Bauer, Dirk Kuhlmeier, Jürgen Krause, Gerald Eckstein, Roland Thewes:
Yield Evaluation of Gold Sensor Electrodes Used for Fully Electronic DNA Detection Arrays on CMOS. 1801-1806 - A. Enzler, Nikolaus Herres
Analysis of etched cantilevers. 1807-1809 - Jakob Janting, Dirch Hjorth Petersen, Christoffer Greisen:
Simulated SAM A-scans on multilayer MEMS components. 1811-1814 - Djemel Lellouchi, Felix Beaudoin, Christophe Le Touze, Philippe Perdu, Romain Desplats:
IR confocal laser microscopy for MEMS Technological Evaluation. 1815-1817 - Phan L. P. Hoa, Gunnar Suchaneck, Gerald Gerlach:
Investigation of dynamic disturbance quantities in piezoresistive silicon sensors. 1819-1822
Volume 42, Number 12, December 2002
- Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Shin Yokoyama:
Atomic-layer-deposited silicon-nitride/SiO2 stack--a highly potential gate dielectrics for advanced CMOS technology. 1823-1835 - Deok-Hoon Kim, Peter Elenius, Michael Johnson, Scott Barrett:
Solder joint reliability of a polymer reinforced wafer level package. 1837-1848 - Alfred F. K. Zehe:
Prediction of electromigration-void formation in copper conductors based on the electron configuration of matrix and solute atoms. 1849-1855 - K. Y. Lim, X. Zhou:
An analytical effective channel-length modulation model for velocity overshoot in submicron MOSFETs based on energy-balance formulation. 1857-1864 - Boualem Djezzar
On the correlation between radiation-induced oxide- and border-trap effects in the gate-oxide nMOSFET's. 1865-1874 - Dimitrios N. Kouvatsos:
On-state and off-state stress-induced degradation in unhydrogenated solid phase crystallized polysilicon thin film transistors. 1875-1882 - Xingsheng Liu, Shuangyan Xu, Guo-Quan Lu, David A. Dillard
Effect of substrate flexibility on solder joint reliability. 1883-1891 - De-Shin Liu, Chin-Yu Ni:
The optimization design of bump interconnections in flip chip packages from the electrical standpoint. 1893-1901 - Chin-Yu Ni, De-Shin Liu, Ching-Yang Chen:
Procedure for design optimization of a T-cap flip chip package. 1903-1911 - Erja Jokinen, Eero Ristolainen:
Anisotropic conductive film flip chip joining using thin chips. 1913-1920 - Frank Stepniak:
Failure criteria of flip chip joints during accelerated testing. 1921-1930 - Dongji Xie, Sammy Yi:
Reliability studies and design improvement of mirror image CSP assembly. 1931-1937 - Silke Liebert:
Encapsulation of naked dies for bulk silicon etching with TMAH. 1939-1944 - Y. W. Chiu, Y. C. Chan, S. M. Lui:
Study of short-circuiting between adjacent joints under electric field effects in fine pitch anisotropic conductive adhesive interconnects. 1945-1951 - Sunit Rane
Thin film, thick film microstrip band pass filter: a comparison and effect of bulk overlay. 1953-1958 - Predrag Osmokrovic, Boris Loncar, Srboljub Stankovic, Aleksandra Vasic:
Aging of the over-voltage protection elements caused by over-voltages. 1959-1966 - E. M. Baskin:
Analysis of burn-in time using the general law of reliability. 1967-1974 - P. C. Lin, Wen Lea Pearn:
Testing process capability for one-sided specification limit with application to the voltage level translator. 1975-1983 - Bing-Liang Yang, N. W. Cheung, S. Denholm, J. Shao, Hei Wong
Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation. 1985-1989 - Shoucai Yuan, Changchun Zhu:
An IGBT DC subcircuit model with non-destructive parameters extraction and comparison with measurements. 1991-1996 - Zhigang Song, Jiyan Dai
Open contact analysis of single bit failure in 0.18 mum technology. 1997-2001 - V. O. Balitska, B. Butkievich, O. I. Shpotyuk, M. M. Vakiv:
On the analytical description of ageing kinetics in ceramic manganite-based NTC thermistors. 2003-2007 - M. L. Huang, Kuen-Suan Chen
Integrated process capability analysis with an application in backlight module. 2009-2014
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