Microelectronics Reliability, Volume 52

Volume 52, Number 1, January 2012

Special Section "2011 Reliability of Compound Semiconductors (ROCS) Workshop"

• 
  Peter Ersland, Roberto Menozzi:
  Editorial. 1
• 
  Charles S. Whitman:
  Impact of ambient temperature set point deviation on Arrhenius estimates. 2-8
• 
  Michael Ferrara, Michael Stephens, Leslie Marchut, Chris Yang, Ventony Fryar, Preston Scott:
  Analysis of in situ monitored thermal cycling benefits for wireless packaging early reliability evaluation. 9-15
• 
  William J. Roesch, Dorothy June M. Hamada, David Littleton:
  Introducing a scale structure to correlate quality and reliability. 16-22
• 
  E. A. Douglas, C. Y. Chang, B. P. Gila, M. R. Holzworth, Kevin S. Jones, Lu Liu, Jinhyung Kim, Soohwan Jang, Glen David Via, Fan Ren, Stephen J. Pearton:
  Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors. 23-28
• 
  Milan Tapajna, Nicole Killat, Uttiya Chowdhury, Jose L. Jimenez, Martin Kuball:
  The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. 29-32
• 
  Jungwoo Joh, Jesús A. del Alamo:
  Impact of gate placement on RF power degradation in GaN high electron mobility transistors. 33-38

Regular Papers

• 
  Tibor Grasser:
  Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities. 39-70
• 
  Ugo Lafont, Henk W. van Zeijl, Sybrand van der Zwaag:
  Increasing the reliability of solid state lighting systems via self-healing approaches: A review. 71-89
• 
  Dhafer Abdulameer Shnawah, Mohd Faizul Mohd Sabri, Irfan Anjum Badruddin:
  A review on thermal cycling and drop impact reliability of SAC solder joint in portable electronic products. 90-99
• 
  Jia-Liang Le:
  A finite weakest-link model of lifetime distribution of high-k gate dielectrics under unipolar AC voltage stress. 100-106
• 
  Robert Mroczynski, Romuald B. Beck:
  Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO₂) layers for non-volatile semiconductor memory (NVSM) applications. 107-111
• 
  P. S. Das, Abhijit Biswas:
  Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlO_x on n-GaAs substrates. 112-117
• 
  Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre:
  High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. 118-123
• 
  Antoine D. Touboul, L. Foro, Frederic Wrobel, Frédéric Saigné:
  On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum. 124-129
• 
  Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou:
  Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. 130-136
• 
  Jaehyun Cho, Sungwook Jung, Kyungsoo Jang, Hyungsik Park, Jongkyu Heo, Wonbaek Lee, DaeYoung Gong, Seungman Park, Hyungwook Choi, Hanwook Jung, Byoungdeog Choi, Junsin Yi:
  The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors. 137-140
• 
  Etienne Herth, H. Desré, Emmanuelle Algré, Christiane Legrand, Tuami Lasri:
  Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications. 141-146
• 
  Chao-Hung Chen, Hsien-Chin Chiu, Chih-Wei Yang, Jeffrey S. Fu, Feng-Tso Chien:
  Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer. 147-150
• 
  Priyanka Malik, R. S. Gupta, Rishu Chaujar, Mridula Gupta:
  AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. 151-158
• 
  Yong Jiang, Li-Lung Lai, Jian-Jun Zhou:
  Single-bit failure analysis at a nanometer resolution by conductive atomic force microscopy. 159-164
• 
  Toni T. Mattila, Jue Li, Jorma K. Kivilahti:
  On the effects of temperature on the drop reliability of electronic component boards. 165-179
• 
  Jenn-Ming Song, Yao-Ren Liu, Yi-Shao Lai, Ying-Ta Chiu, Ning-Cheng Lee:
  Influence of trace alloying elements on the ball impact test reliability of SnAgCu solder joints. 180-189
• 
  Juha Karppinen, Jue Li, J. Pakarinen, Toni T. Mattila, Mervi Paulasto-Kröckel:
  Shock impact reliability characterization of a handheld product in accelerated tests and use environment. 190-198
• 
  Takeshi Ito, Isamu Taguchi, Masayasu Soga, Masahiko Mitsuhashi, Toshiro Shinohara, Toshinori Ogashiwa, Takashi Nishimori, Nobuyuki Akiyama:
  Thermal stability of back side metallization multilayer for power device application. 199-205
• 
  Mingzhi Ni, Ming Li, Dali Mao:
  Adhesion improvement of Epoxy Molding Compound - Pd Preplated leadframe interface using shaped nickel layers. 206-211
• 
  Sébastien Jacques, A. Caldeira, N. Batut, A. Schellmanns, R. Leroy, L. Gonthier:
  Lifetime prediction modeling of non-insulated TO-220AB packages with lead-based solder joints during power cycling. 212-216
• 
  Chang-Kyu Chung, Jae-Han Kim, Jong-Won Lee, Kyoung-Won Seo, Kyung-Wook Paik:
  Enhancement of electrical stability of anisotropic conductive film (ACF) interconnections with viscosity-controlled and high T_g ACFs in fine-pitch chip-on-glass applications. 217-224
• 
  Kyoung-Lim Suk, Ho-Young Son, Chang-Kyu Chung, Joong Do Kim, Jin-Woo Lee, Kyung-Wook Paik:
  Flexible Chip-on-Flex (COF) and embedded Chip-in-Flex (CIF) packages by applying wafer level package (WLP) technology using anisotropic conductive films (ACFs). 225-234
• 
  Olivér Krammer, László Milán Molnár, László Jakab, András Szabó:
  Modelling the effect of uneven PWB surface on stencil bending during stencil printing process. 235-240
• 
  C. Y. Khor, Mohd Zulkifly Abdullah, H. J. Tony Tan, W. C. Leong, D. Ramdan:
  Investigation of the fluid/structure interaction phenomenon in IC packaging. 241-252
• 
  Owen Thomas, Chris Hunt, Martin Wickham:
  Finite difference modelling of moisture diffusion in printed circuit boards with ground planes. 253-261
• 
  W. L. Lu, Y. M. Hwang:
  Analysis of a vibration-induced micro-generator with a helical micro-spring and induction coil. 262-270
• 
  R. Ardito, Attilio Frangi, Alberto Corigliano, Biagio De Masi, G. Cazzaniga:
  The effect of nano-scale interaction forces on the premature pull-in of real-life Micro-Electro-Mechanical Systems. 271-281
• 
  Franco Fiori:
  On the use of high-impedance power supplies to reduce the substrate switching noise in system-on-chips. 282-288
• 
  Marta Bagatin, Simone Gerardin, Alessandro Paccagnella, Carla Andreani, Giuseppe Gorini, C. D. Frost:
  Temperature dependence of neutron-induced soft errors in SRAMs. 289-293
• 
  Pawel Salek, Lidia Lukasiak, Andrzej Jakubowski:
  New threshold voltage definition for undoped symmetrical DG MOSFET. 294-295
• 
  S. Tarasovs, Janis Andersons:
  Competition between the buckling-driven delamination and wrinkling in compressed thin coatings. 296-299
• 
  Vojkan Davidovic:
  Reliability Physics and Engineering: Time-to-Failure Modeling, J.W. McPherson. Springer (2010). 318 pp., ISBN: 978-1-4419-6347-5. 300

Volume 52, Number 2, February 2012

Special Section "Low Temperature Processing for Microelectronics and Microsystems Packaging"

• 
  Tadatomo Suga, Jenn-Ming Song, Yi-Shao Lai:
  Guest Editorial - Low Temperature Processing for Microelectronics and Microsystems Packaging. 301
• 
  Cheng-Ta Ko, Kuan-Neng Chen:
  Low temperature bonding technology for 3D integration. 302-311
• 
  Ya-Sheng Tang, Yao-Jen Chang, Kuan-Neng Chen:
  Wafer-level Cu-Cu bonding technology. 312-320
• 
  Chuan Seng Tan, Dau Fatt Lim, Xiao Fang Ang, J. Wei, K. C. Leong:
  Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement. 321-324
• 
  Ki Yeol Byun, Cindy Colinge:
  Overview of low temperature hydrophilic Ge to Si direct bonding for heterogeneous integration. 325-330
• 
  H. Moriceau, F. Rieutord, F. Fournel, Léa Di Cioccio, C. Moulet, Luc Libralesso, Pierric Gueguen, Rachid Taibi, C. Deguet:
  Low temperature direct bonding: An attractive technique for heterostructures build-up. 331-341
• 
  Ryuichi Kondou, Chenxi Wang, Akitsu Shigetou, Tadatomo Suga:
  Nanoadhesion layer for enhanced Si-Si and Si-SiN wafer bonding. 342-346
• 
  Chenxi Wang, Tadatomo Suga:
  Investigation of fluorine containing plasma activation for room-temperature bonding of Si-based materials. 347-351
• 
  S. L. Lin, W. C. Huang, C. T. Ko, Kuan-Neng Chen:
  BCB-to-oxide bonding technology for 3D integration. 352-355
• 
  Hermann Oppermann, Lothar Dietrich:
  Nanoporous gold bumps for low temperature bonding. 356-360
• 
  Matiar M. R. Howlader, Thomas E. Doyle:
  Low temperature nanointegration for emerging biomedical applications. 361-374
• 
  K. Suganuma, S. Sakamoto, N. Kagami, D. Wakuda, K. S. Kim, M. Nogi:
  Low-temperature low-pressure die attach with hybrid silver particle paste. 375-380
• 
  Y. J. Chen, C. C. Chang, H. Y. Lin, S. C. Hsu, C. Y. Liu:
  Fabrication of vertical thin-GaN light-emitting diode by low-temperature Cu/Sn/Ag wafer bonding. 381-384
• 
  Chi-Pu Lin, Chih-Ming Chen:
  Solid-state interfacial reactions at the solder joints employing Au/Pd/Ni and Au/Ni as the surface finish metallizations. 385-390
• 
  Yu-Feng Liu, Weng-Sing Hwang, Yen-Fang Pai, Ming-Hsu Tsai:
  Low temperature fabricated conductive lines on flexible substrate by inkjet printing. 391-397
• 
  Yih-Ming Liu, Nen-Wen Pu, Wen-Ding Chen, Kun-Hong Lin, Yuh Sung, Ming-Der Ger, Ching-Liang Chang, Te-Liand Tseng:
  Low temperature fabrication of Ni-P metallic patterns on ITO substrates utilizing inkjet printing. 398-404
• 
  Aminul Islam, Mohd. Hasan:
  A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell. 405-411
• 
  W. Heo, Nae-Eung Lee:
  Effect of additive N₂ and Ar gases on surface smoothening and fracture strength of Si wafers during high-speed chemical dry thinning. 412-417
• 
  R. K. Mamedov, M. A. Yeganeh:
  Current transport and formation of energy structures in narrow Au/n-GaAs Schottky diodes. 418-424
• 
  Feng-Renn Juang, Yean-Kuen Fang, Hung-Yu Chiu:
  Dependence of the Au/SnO_x/n-LTPS/glass thin film MOS Schottky diode CO gas sensing performances on operating temperature. 425-429
• 
  Ákos Nemcsics, Andrea Stemmann, Jeno Takács:
  To the understanding of the formation of the III-V based droplet epitxial nanorings. 430-433
• 
  Zhihua Dong, Jinyan Wang, Cheng P. Wen, Shenghou Liu, Rumin Gong, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang:
  High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure. 434-438
• 
  Sachin Kumar, Nikhil M. Vichare, Eli Dolev, Michael G. Pecht:
  A health indicator method for degradation detection of electronic products. 439-445
• 
  Feifei He, Cher Ming Tan:
  Electromigration reliability of interconnections in RF low noise amplifier circuit. 446-454
• 
  J. W. Jang, L. Li, P. Bowles, R. Bonda, D. R. Frear:
  High-lead flip chip bump cracking on the thin organic substrate in a module package. 455-460

Volume 52, Number 3, March 2012

Editorial

• 
  Vitezslav Benda:
  Progress in power semiconductor devices. 461-462

Special Section Papers

• 
  Patrik Pribytny, Daniel Donoval, Ales Chvála, Juraj Marek, Marian Molnar:
  Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation. 463-468
• 
  Jirí Hájek, Václav Papez, B. Kojecký:
  Investigation of flicker noise in silicon diodes under reverse bias. 469-474
• 
  Josef Lutz, Roman Baburske:
  Dynamic avalanche in bipolar power devices. 475-481
• 
  Nishad Patil, Diganta Das, Michael G. Pecht:
  A prognostic approach for non-punch through and field stop IGBTs. 482-488
• 
  Emmanuel Marcault, Marie Breil, A. Bourennane, Patrick Tounsi, Jean-Marie Dorkel:
  Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations. 489-496
• 
  B. T. Donnellan, G. J. Roberts, P. A. Mawby, A. T. Bryant:
  Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives. 497-502
• 
  Ignasi Cortés, Gaëtan Toulon, Frederic Morancho, E. Hugonnard-Bruyere, B. Villard, W. J. Toren:
  Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors. 503-508
• 
  Ralf Siemieniec, Gerhard Nöbauer, Daniel Domes:
  Stability and performance analysis of a SiC-based cascode switch and an alternative solution. 509-518

Regular Papers

• 
  Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello:
  An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. 519-524
• 
  Pavel Poliakov, Pieter Blomme, Alessandro Vaglio Pret, Miguel Corbalan Miranda, Roel Gronheid, Diederik Verkest, Jan Van Houdt, Wim Dehaene:
  Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories. 525-529
• 
  Arief Suriadi Budiman, H.-A.-S. Shin, B.-J. Kim, S.-H. Hwang, Ho-Young Son, Min-Suk Suh, Q.-H. Chung, K.-Y. Byun, Nobumichi Tamura, Martin Kunz, Young-Chang Joo:
  Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits. 530-533
• 
  E. J. Cheng, Yu-Lin Shen:
  Thermal expansion behavior of through-silicon-via structures in three-dimensional microelectronic packaging. 534-540
• 
  Dao-Long Chen, Ping-Feng Yang, Yi-Shao Lai:
  A review of three-dimensional viscoelastic models with an application to viscoelasticity characterization using nanoindentation. 541-558
• 
  Liang Zhang, Cheng-wen He, Yong-huan Guo, Ji-guang Han, Yong-wei Zhang, Xu-yan Wang:
  Development of SnAg-based lead free solders in electronics packaging. 559-578
• 
  Fangjie Cheng, Feng Gao, Yan Wang, Yunlong Wu, Zhaolong Ma, Junxiang Yang:
  Sn addition on the tensile properties of high temperature Zn-4Al-3Mg solder alloys. 579-584
• 
  Tingbi Luo, Anmin Hu, Jing Hu, Ming Li, Dali Mao:
  Microstructure and mechanical properties of Sn-Zn-Bi-Cr lead-free solder. 585-588
• 
  Daquan Yu:
  Development of reliable low temperature wafer level hermetic bonding using composite seal joint. 589-594
• 
  Jiwon Kim, Byung-seung Yim, Jongmin Kim, Jooheon Kim:
  The effects of functionalized graphene nanosheets on the thermal and mechanical properties of epoxy composites for anisotropic conductive adhesives (ACAs). 595-602
• 
  Janusz M. Smulko, Kazimierz Józwiak, Marek Olesz:
  Quality testing methods of foil-based capacitors. 603-609

Volume 52, Number 4, April 2012

Editorial

• 
  Hei Wong:
  Advances in non-volatile memory technology. 611-612

Special Section Papers

• 
  Takayuki Kawahara, Kenchi Ito, Riichiro Takemura, Hideo Ohno:
  Spin-transfer torque RAM technology: Review and prospect. 613-627
• 
  Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
  Emerging memory technologies: Trends, challenges, and modeling methods. 628-634
• 
  Jer-Chyi Wang, Chih-Ting Lin, Pai-Chi Chou, Chao-Sung Lai:
  Gadolinium-based metal oxide for nonvolatile memory applications. 635-641
• 
  Elena Atanassova, Albena Paskaleva, Dencho Spassov:
  Doped Ta₂O₅ and mixed HfO₂-Ta₂O₅ films for dynamic memories applications at the nanoscale. 642-650
• 
  HongYu Yu, Yuan Sun, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong:
  Perspective of flash memory realized on vertical Si nanowires. 651-661
• 
  Jong-Ho Lee, Sang-Goo Jung:
  NAND flash memory technology utilizing fringing electric field. 662-669
• 
  Oi-Ying Wong, Hei Wong, Wing-Shan Tam, Ted Chi-Wah Kok:
  A comparative study of charge pumping circuits for flash memory applications. 670-687
• 
  Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
  Resistive switching behavior of a CeO₂ based ReRAM cell incorporated with Si buffer layer. 688-691

Regular Papers

• 
  Shengdong Hu, Jun Luo, Kaizhou Tan, Ling Zhang, Zhaoji Li, Bo Zhang, Jianlin Zhou, Ping Gan, Guolin Qin, Zhengyuan Zhang:
  Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate. 692-697
• 
  Chien-Ping Wang, Tzung-Te Chen, Han-Kuei Fu, Tien-Li Chang, Pei-Ting Chou, Mu-Tao Chu:
  Analysis of thermal characteristics and mechanism of degradation of flip-chip high power LEDs. 698-703
• 
  Wenjian Yu, Qingqing Zhang, Zuochang Ye, Zuying Luo:
  Efficient statistical capacitance extraction of nanometer interconnects considering the on-chip line edge roughness. 704-710
• 
  R. F. Szeloch, Pawel Janus, Jaroslaw Serafinczuk, P. M. Szecówka, Grzegorz Józwiak:
  Characterization of fatigued Al lines by means of SThM and XRD: Analysis using fast Fourier transform. 711-717
• 
  Se Young Yang, Woon-Seong Kwon, Soon-Bok Lee:
  Chip warpage model for reliability prediction of delamination failures. 718-724
• 
  Chien-Pan Liu, Yen-Fu Liu, Chang-Hung Li, Hung-Chieh Cheng, Yi-Chun Kung, Jeng-Yu Lin:
  A novel decapsulation technique for failure analysis of epoxy molded IC packages with Cu wire bonds. 725-734
• 
  Yusuf Cinar, Jinwoo Jang, Gunhee Jang, Seonsik Kim, Jaeseok Jang, Jinkyu Chang, Yonghyun Jun:
  Failure mechanism of FBGA solder joints in memory module subjected to harmonic excitation. 735-743
• 
  W. C. Leong, Mohd Zulkifly Abdullah, C. Y. Khor:
  Application of flexible printed circuit board (FPCB) in personal computer motherboards: Focusing on mechanical performance. 744-756
• 
  Yongguang Xiao, Minghua Tang, Jiancheng Li, Bo Jiang, John He:
  The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. 757-760

Volume 52, Number 5, May 2012

Editorial

• 
  Cheng-Yi Liu, S. W. Ricky Lee, Moo Whan Shin, Yi-Shao Lai:
  Reliability of high-power LED packaging and assembly. 761

Special Issue Papers

• 
  Moon-Hwan Chang, Diganta Das, Prabhakar V. Varde, Michael G. Pecht:
  Light emitting diodes reliability review. 762-782
• 
  S. Tarashioon, Alessandro Baiano, Henk W. van Zeijl, C. Guo, S. W. Koh, W. D. van Driel, G. Q. Zhang:
  An approach to "Design for Reliability" in solid state lighting systems at high temperatures. 783-793
• 
  Yen-Fu Su, Shin-Yueh Yang, Tuan-Yu Hung, Chang-Chun Lee, Kuo-Ning Chiang:
  Light degradation test and design of thermal performance for high-power light-emitting diodes. 794-803
• 
  Matteo Meneghini, Matteo Dal Lago, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni:
  Chip and package-related degradation of high power white LEDs. 804-812
• 
  Jau-Sheng Wang, Chun-Chin Tsai, Jyun-Sian Liou, Wei-Chih Cheng, Shun-Yuan Huang, Gi-Hung Chang, Wood-Hi Cheng:
  Mean-time-to-failure evaluations of encapsulation materials for LED package in accelerated thermal tests. 813-817
• 
  Ray-Hua Horng, Re-Ching Lin, Yi-Chen Chiang, Bing-Han Chuang, Hung-Lieh Hu, Chen-Peng Hsu:
  Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology. 818-821
• 
  C. H. Chen, Ming-Yi Tsai:
  Strength determination of high-power LED die using point-load and line-load tests. 822-829
• 
  Jong Hwa Choi, Moo Whan Shin:
  Thermal investigation of LED lighting module. 830-835
• 
  Minseok Ha, Samuel Graham:
  Development of a thermal resistance model for chip-on-board packaging of high power LED arrays. 836-844
• 
  Ming-Yi Tsai, C. H. Chen, C. S. Kang:
  Thermal measurements and analyses of low-cost high-power LED packages and their modules. 845-854
• 
  C. T. Yang, W. C. Liu, C. Y. Liu:
  Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package. 855-860
• 
  Bo-Hung Liou, Chih-Ming Chen, Ray-Hua Horng, Yi-Chen Chiang, Dong-Sing Wuu:
  Improvement of thermal management of high-power GaN-based light-emitting diodes. 861-865
• 
  Han-Kuei Fu, Chin-Wei Lin, Tzung-Te Chen, Chiu-Ling Chen, Pei-Ting Chou, Chien-Jen Sun:
  Investigation of dynamic color deviation mechanisms of high power light-emitting diode. 866-871
• 
  Te-yuan Chung, Jian-Hong Jhang, Jing-Sian Chen, Yi-Chien Lo, Gwo-Herng Ho, Mount-Learn Wu, Ching-Cherng Sun:
  A study of large area die bonding materials and their corresponding mechanical and thermal properties. 872-877
• 
  Ming-Te Lin, Shang-Ping Ying, Ming-Yao Lin, Kuang-Yu Tai, Jyh-Chen Chen:
  High power LED package with vertical structure. 878-883
• 
  Ming-Jer Jeng, Kuo-Ling Chiang, Hsin-Yi Chang, Chia-Yi Yen, Cheng-Chen Lin, Yuan-Hsiao Chang, Mu-Jen Lai, Yu-Lin Lee, Liann-Be Chang:
  Heat sink performances of GaN/InGaN flip-chip light-emitting diodes fabricated on silicon and AlN submounts. 884-888
• 
  Yi-Chien Lo, Kuan-Teng Huang, Xuan-Hao Lee, Ching-Cherng Sun:
  Optical design of a Butterfly lens for a street light based on a double-cluster LED. 889-893
• 
  Hsun-Ching Hsu, Chun-Jung Wang, Hong Ru Lin, Pin Han:
  Optimized semi-sphere lens design for high power LED package. 894-899
• 
  Lei Chen, Cheng-I Chu, Ru-Shi Liu:
  Improvement of emission efficiency and color rendering of high-power LED by controlling size of phosphor particles and utilization of different phosphors. 900-904
• 
  Hui Huang Cheng, De-Shau Huang, Ming-Tzer Lin:
  Heat dissipation design and analysis of high power LED array using the finite element method. 905-911
• 
  Hung-Yu Chou, Cheng-Chien Chen, Tsung-Hsun Yang:
  Maintenance of stable light emission in high power LEDs. 912-915
• 
  Jyh-Rong Lin, Tuen Yi Ng, Zhaoxin Wang, Shan Mei Wan, Kin Wai Wong, Ming Lu, Enboa Wu:
  Wafer-level LED-SiP based mobile flash module and characterization. 916-921
• 
  Rong Zhang, S. W. Ricky Lee:
  Moldless encapsulation for LED wafer level packaging using integrated DRIE trenches. 922-932
• 
  H. C. Chen, K. J. Chen, C. C. Lin, Chin-Hsin Wang, C. C. Yeh, H. H. Tsai, Min-Hsiung Shih, H. C. Kuo:
  Improvement of lumen efficiency in white light-emitting diodes with air-gap embedded package. 933-936
• 
  Bong-Min Song, Bongtae Han, Avram Bar-Cohen, Mehmet Arik, Rajdeep Sharma, Stan Weaver:
  Life prediction of LED-based recess downlight cooled by synthetic jet. 937-948
• 
  Y. C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, Che-Kang Hsu, Shang-Ju Tu, Shu-Yen Liu, C. C. Yang, Feng-Wen Huang:
  Vertical InGaN light-emitting diodes with Ag paste as bonding layer. 949-951

Volume 52, Number 6, June 2012

Research Papers

• 
  Michael G. Pecht:
  Nvidia's GPU failures: A case for prognostics and health management. 953-957
• 
  N. Lakhdar, Fayçal Djeffal:
  New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime. 958-963
• 
  Gang Xie, Edward Xu, Bo Zhang, Wai Tung Ng:
  Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process. 964-968
• 
  Che-Kai Lin, Hsien-Chin Chiu, Chao-Wei Lin, Hsuan-Ling Kao, Feng-Tso Chien:
  Investigation on the thermal behavior of 0.15 μm gate-length In_0.4Al_0.6As/In_0.4Ga_0.6As MHEMT. 969-973
• 
  Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta:
  Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. 974-983
• 
  Srabanti Pandit, Binit Syamal, Chandan Kumar Sarkar:
  Modeling of noise for p-channel DG-FinFETs. 984-988
• 
  Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta:
  Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis. 989-994
• 
  Yung-Yu Chen, Chih-Ren Hsieh, Fang-Yu Chiu:
  Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantation. 995-998
• 
  Hsuan-Ling Kao, Chih-Sheng Yeh, Meng-Ting Chen, Hsien-Chin Chiu, Li-Chun Chang:
  Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain. 999-1004
• 
  Songul Duman, K. Ejderha, Ö. Yigit, Abdulmecit Türüt:
  Determination of contact parameters of Ni/n-GaP Schottky contacts. 1005-1011
• 
  Guido Notermans, Sergey Bychikhin, Dionyz Pogany, David Johnsson, Dejan M. Maksimovic:
  HMM-TLP correlation for system-efficient ESD design. 1012-1019
• 
  Chih-Ting Yeh, Ming-Dou Ker:
  Study of intrinsic characteristics of ESD protection diodes for high-speed I/O applications. 1020-1030
• 
  Ales Chvála, Daniel Donoval, P. Beno, Juraj Marek, Patrik Pribytny, Marian Molnar:
  Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation. 1031-1038
• 
  M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
  Oxide and interface trap densities estimation in ultrathin W/La₂O₃/Si MOS capacitors. 1039-1042
• 
  Jibin Fan, Hongxia Liu, Qianwei Kuang, Bo Gao, Fei Ma, Yue Hao:
  Physical properties and electrical characteristics of H₂O-based and O₃-based HfO₂ films deposited by ALD. 1043-1049
• 
  A. A. Dakhel:
  W doping effect on the dielectric properties of amorphous Ga₂O₃ films grown on Si substrate for low-k applications. 1050-1054
• 
  Yong-Shiuan Tsair, Yean-Kuen Fang, Feng-Renn Juang, Yu-Hsiung Wang, Wen-Ting Chu, Yung-Tao Lin, Luan Tran:
  A novel method to improve cell endurance window in source-side injection split gate flash memory. 1055-1059
• 
  Cristian Zambelli, Andrea Chimenton, Piero Olivo:
  Modeling of SET seasoning effects in Phase Change Memory arrays. 1060-1064
• 
  Shyue-Kung Lu, Tin-Wei Chang, Han-Yu Hsu:
  Yield enhancement techniques for 3-dimensional random access memories. 1065-1070
• 
  J. C. Hsieh, H. J. Huang, S. C. Shen:
  Experimental study of microrectangular groove structure covered with multi mesh layers on performance of flat plate heat pipe for LED lighting module. 1071-1079
• 
  Bing-Liang Chen, Pao-Cheng Huang, Ling-Sheng Jang, Ming-Kun Chen:
  Electrical failure analysis of peristaltic micropumps fabricated with PZT actuators. 1080-1085
• 
  Wenbin Wang, Shuxin Luo, Michael G. Pecht:
  Economic design of the mean prognostic distance for canary-equipped electronic systems. 1086-1091
• 
  Peisheng Liu, Liangyu Tong, Jinlan Wang, Lei Shi, Hao Tang:
  Challenges and developments of copper wire bonding technology. 1092-1098
• 
  Hassen Medjahed, Paul-Etienne Vidal, Bertrand Nogarede:
  Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes. 1099-1104
• 
  Fuliang Wang, Yun Chen, Lei Han:
  Experiment study of dynamic looping process for thermosonic wire bonding. 1105-1111
• 
  Hongtao Chen, Jing Han, Jue Li, Mingyu Li:
  Inhomogeneous deformation and microstructure evolution of Sn-Ag-based solder interconnects during thermal cycling and shear testing. 1112-1120
• 
  Peter Borgesen, Liang Yin, Pericles Kondos:
  Acceleration of the growth of Cu₃Sn voids in solder joints. 1121-1127
• 
  Jin Hyuk Gang, Dawn An, Jin Won Joo, Joo Ho Choi:
  Uncertainty analysis of solder alloy material parameters estimation based on model calibration method. 1128-1137
• 
  Tamás Hurtony, Attila Bonyár, Péter Gordon, Gábor Harsányi:
  Investigation of intermetallic compounds (IMCs) in electrochemically stripped solder joints with SEM. 1138-1142
• 
  Chun-Sean Lau, Mohd Zulkifly Abdullah, F. Che Ani:
  Optimization modeling of the cooling stage of reflow soldering process for ball grid array package using the gray-based Taguchi method. 1143-1152
• 
  Xu Zeng, Hong-Qi Sun, Yan-Feng He, Xin-Ping Qu:
  Reflow discoloration formation on pure tin (Sn) surface finish. 1153-1156
• 
  Wenjing Zhang, Wei Luo, Anmin Hu, Ming Li:
  Adhesion improvement of Cu-based substrate and epoxy molding compound interface by hierarchical structure preparation. 1157-1164
• 
  Byung-seung Yim, Yumi Kwon, Seung Hoon Oh, Jooheon Kim, Yong-Eui Shin, Seong Hyuk Lee, Jongmin Kim:
  Characteristics of solderable electrically conductive adhesives (ECAs) for electronic packaging. 1165-1173
• 
  Kyung-Woon Jang, Jin-Hyoung Park, Soon-Bok Lee, Kyung-Wook Paik:
  A study on thermal cycling (T/C) reliability of anisotropic conductive film (ACF) flip chip assembly for thin chip-on-board (COB) packages. 1174-1181
• 
  Kyoung-Lim Suk, Kyosung Choo, Sung Jin Kim, Jong-Soo Kim, Kyung-Wook Paik:
  Studies on various chip-on-film (COF) packages using ultra fine pitch two-metal layer flexible printed circuits (two-metal layer FPCs). 1182-1188
• 
  Fei Su, Ronghai Mao, Ji Xiong, Kun Zhou, Zheng Zhang, Jiang Shao, Cunyi Xie:
  On thermo-mechanical reliability of plated-through-hole (PTH). 1189-1196
• 
  Farshad Firouzi, Ali Azarpeyvand, Mostafa E. Salehi, Sied Mehdi Fakhraie:
  Adaptive fault-tolerant DVFS with dynamic online AVF prediction. 1197-1208
• 
  Haiqing Nan, Ken Choi:
  Low cost and highly reliable hardened latch design for nanoscale CMOS technology. 1209-1214
• 
  Hossein Asadi, Mehdi Baradaran Tahoori, Mahdi Fazeli, Seyed Ghassem Miremadi:
  Efficient algorithms to accurately compute derating factors of digital circuits. 1215-1226
• 
  Jianjun Chen, Shuming Chen, Bin Liang, Biwei Liu, Fanyu Liu:
  Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism. 1227-1232
• 
  Farouk Smith:
  Single event upset mitigation by means of a sequential circuit state freeze. 1233-1240
• 
  Lei Li, Jianhao Hu:
  Fault model for on-chip communication and joint equalization and special spacing rules for on-chip bus design. 1241-1246
• 
  Aminul Islam, Mohd. Hasan:
  Variability aware low leakage reliable SRAM cell design technique. 1247-1252

Volume 52, Number 7, July 2012

Editorial

• 
  Artur Wymyslowski:
  2011 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 1253-1254

Special Issue Papers

• 
  Rainer Dudek, Reinhard Pufall, Bettina Seiler, Bernd Michel:
  Studies on the reliability of power packages based on strength and fracture criteria. 1255-1265
• 
  Reinhard Pufall, Michael Goroll, Joachim Mahler, Werner Kanert, M. Bouazza, Olaf Wittler, Rainer Dudek:
  Degradation of moulding compounds during highly accelerated stress tests - A simple approach to study adhesion by performing button shear tests. 1266-1271
• 
  Heinz Pape, Dirk Schweitzer, Liu Chen, Rudolf Kutscherauer, Martin Walder:
  Development of a standard for transient measurement of junction-to-case thermal resistance. 1272-1278
• 
  R. H. Poelma, H. Sadeghian, Sau Koh, G. Q. Zhang:
  Effects of single vacancy defect position on the stability of carbon nanotubes. 1279-1284
• 
  O. Hölck, Jörg Bauer, Olaf Wittler, Bernd Michel, Bernhard Wunderle:
  Comparative characterization of chip to epoxy interfaces by molecular modeling and contact angle determination. 1285-1290
• 
  Nancy Iwamoto:
  Developing the stress-strain curve to failure using mesoscale models parameterized from molecular models. 1291-1299
• 
  E. R. Weltevreden, S. J. Tesarski, Artur Wymyslowski, Müge Erinc, Alexander W. J. Gielen:
  A multi-scale approach of the thermo-mechanical properties of silica-filled epoxies used in electronic packaging. 1300-1305

Regular Papers

• 
  Guang Zeng, Stuart D. McDonald, Kazuhiro Nogita:
  Development of high-temperature solders: Review. 1306-1322
• 
  Jaroslav Kovác, Alexander Satka, Ales Chvála, D. Donoval, Peter Kordos, Sylvain L. Delage:
  Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors. 1323-1327
• 
  Yang-Hua Chang, Chun-Teng Huang:
  A collector current model for InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with non-ideal effects. 1328-1331
• 
  Fu-Kwun Wang, Tao-Peng Chu:
  Lifetime predictions of LED-based light bars by accelerated degradation test. 1332-1336
• 
  Yue Xu, Feng Yan, ZhiGuo Li, Fan Yang, Jianguang Chang, Yonggang Wang:
  Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells. 1337-1341
• 
  Magali Estrada, Antonio Cerdeira, Benjamín Iñíguez:
  Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors. 1342-1345
• 
  Myung Ju Kim, Duck-Kyun Choi:
  Effect of enhanced-mobility current path on the mobility of AOS TFT. 1346-1349
• 
  M. Enver Aydin, F. Yakuphanoglu:
  Electrical characterization of inorganic-on-organic diode based InP and poly(3, 4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT: PSS). 1350-1354
• 
  Murat Soylu, Fahrettin Yakuphanoglu, I. S. Yahia:
  Fabrication and electrical characteristics of Perylene-3, 4, 9, 10-tetracarboxylic dianhydride/p-GaAs diode structure. 1355-1361
• 
  Sakir Aydogan, M. Saglam, Abdulmecit Türüt:
  Effect of temperature on the capacitance-frequency and conductance-voltage characteristics of polyaniline/p-Si/Al MIS device at high frequencies. 1362-1366
• 
  Dehua Xiong, Hong Li, Jinshu Cheng:
  Surface and interface characterization of oxygen plasma activated anodic bonding of glass-ceramics to stainless steel. 1367-1372
• 
  Kai Li, Wenyuan Chen, Weiping Zhang:
  Design, modeling and analysis of highly reliable capacitive microaccelerometer based on circular stepped-plate and small-area touch mode. 1373-1381
• 
  Michael McMahon, Jeff Jones:
  A methodology for accelerated testing by mechanical actuation of MEMS devices. 1382-1388
• 
  Julian W. Post, A. Bhattacharyya:
  Burn-in and thermal cyclic tests to determine the short-term reliability of a thin film resistance temperature detector. 1389-1395
• 
  Mahdiar Hosein Ghadiry, Asrulnizam Bin Abd Manaf, Mahdieh Nadi Senjani, Meisam Rahmani, Muhammad Taghi Ahmad:
  Ionization coefficient of monolayer graphene nanoribbon. 1396-1400
• 
  Mark D. Placette, Xuejun Fan, Jie-Hua Zhao, Darvin Edwards:
  Dual stage modeling of moisture absorption and desorption in epoxy mold compounds. 1401-1408
• 
  Kenny C. Otiaba, R. S. Bhatti, Ndy N. Ekere, Sabuj Mallik, M. O. Alam, Emeka H. Amalu, Mathias Ekpu:
  Numerical study on thermal impacts of different void patterns on performance of chip-scale packaged power device. 1409-1419
• 
  Michael Reid, Maurice N. Collins, Eric E. Dalton, Jeff M. Punch, David A. Tanner:
  Testing method for measuring corrosion resistance of surface mount chip resistors. 1420-1427
• 
  Wei-Luen Jang, Tai-Siang Wang, Yen-Fen Lai, Kwang-Lung Lin, Yi-Shao Lai:
  The performance and fracture mechanism of solder joints under mechanical reliability test. 1428-1434
• 
  Yoshihiko Kanda, Yoshiharu Kariya:
  Evaluation of creep properties for Sn-Ag-Cu micro solder joint by multi-temperature stress relaxation test. 1435-1440
• 
  Yunsung Kim, Hyelim Choi, Hyoungjoo Lee, Dongjun Shin, Jinhan Cho, Heeman Choe:
  Improved reliability of copper-cored solder joints under a harsh thermal cycling condition. 1441-1444
• 
  Jussi Hokka, Jue Li, Toni T. Mattila, Mervi Paulasto-Kröckel:
  The reliability of component boards studied with different shock impact repetition frequencies. 1445-1453
• 
  Siva P. V. Nadimpalli, Jan K. Spelt:
  Prediction of pad cratering fracture at the copper pad - Printed circuit board interface. 1454-1463
• 
  Tz-Cheng Chiu, Chun-Hui Chen:
  A numerical procedure for simulating delamination growth on interfaces of interconnect structures. 1464-1474
• 
  Bo Wang, Jiajun Li, Anthony Gallagher, James Wrezel, Pongpinit Towashirporn, Naiqin Zhao:
  Drop impact reliability of Sn-1.0Ag-0.5Cu BGA interconnects with different mounting methods. 1475-1482
• 
  Rita Faddoul, Nadège Reverdy-Bruas, Anne Blayo, Thomas Haas, Christian Zeilmann:
  Optimisation of silver paste for flexography printing on LTCC substrate. 1483-1491
• 
  Chao-Ton Su, Chia-Ming Lin, C. Alec Chang:
  Optimization of the bistability property for flexible display by an integrated approach using Taguchi methods, neural networks and genetic algorithms. 1492-1500
• 
  Soon-Wan Chung, Hyun-Tae Kim:
  Interfacial reliability between hot-melt polyamides resin and textile for wearable electronics application. 1501-1510
• 
  Baojun Liu, Li Cai, Peng Bai, Weidong Peng:
  Reliability evaluation for single event crosstalk via probabilistic transfer matrix. 1511-1514
• 
  Saurabh Kothawade, Koushik Chakraborty, Sanghamitra Roy, Yiding Han:
  Analysis of intermittent timing fault vulnerability. 1515-1522
• 
  Wu-Hu Li, S. W. Joelle Ong:
  Cu diffusion in Ag-plated Cu leadframe packages. 1523-1527
• 
  Pedro Reviriego, Costas Argyrides, Juan Antonio Maestro:
  Efficient error detection in Double Error Correction BCH codes for memory applications. 1528-1530

Volume 52, Number 8, August 2012

Editorial

• 
  Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou:
  ICMAT 2011 - Reliability and variability of semiconductor devices and ICs. 1531

Special Section "ICMAT 2011 - Reliability and variability of semiconductor devices and Ics"

• 
  Hajdin Ceric, Roberto Lacerda de Orio, Siegfried Selberherr:
  Interconnect reliability dependence on fast diffusivity paths. 1532-1538
• 
  Cher Ming Tan, Wei Li, Zhenghao Gan:
  Applications of finite element methods for reliability study of ULSI interconnections. 1539-1545
• 
  Dominik Lorenz, Martin Barke, Ulf Schlichtmann:
  Efficiently analyzing the impact of aging effects on large integrated circuits. 1546-1552
• 
  Meng Keong Lim, Jingyuan Lin, Yong Chiang Ee, Chee Mang Ng, Jun Wei, Chee Lip Gan:
  Experimental characterization and modelling of electromigration lifetime under unipolar pulsed current stress. 1553-1558
• 
  Xin Pan, Helmut Graeb:
  Reliability optimization of analog integrated circuits considering the trade-off between lifetime and area. 1559-1564
• 
  Bogdan Tudor, Joddy Wang, Zhaoping Chen, Robin Tan, Weidong Liu, Frank Lee:
  An accurate MOSFET aging model for 28 nm integrated circuit simulation. 1565-1570
• 
  Josef Watts, Henry Trombley:
  Including spatial correlations of channel length and threshold voltage variation in circuit simulations. 1571-1574
• 
  Feifei He, Cher Ming Tan:
  Effect of IC layout on the reliability of CMOS amplifiers. 1575-1580
• 
  A. D. Trigg, Tai Chong Chai, Xiaowu Zhang, Xian Tong Chen, Leong Ching Wai:
  Modular sensor chip design for package stress evaluation and reliability characterisation. 1581-1585
• 
  S. B. Shashank, Mohd Wajid, Satyam Mandavalli:
  Fault detection in resistive ladder network with minimal measurements. 1586-1592
• 
  Jian Wu, Shurong Dong, Mingliang Li, Meng Miao, Fei Ma, Jianfeng Zheng, Yan Han:
  A novel power-clamp assisted complementary MOSFET for robust ESD protection. 1593-1597
• 
  Meng Miao, Shurong Dong, Mingliang Li, Jian Wu, Fei Ma, Jianfeng Zheng, Yan Han:
  A novel gate-suppression technique for ESD protection. 1598-1601
• 
  Yanjie Wang, Bo-Chao Huang, Ming Zhang, Jason C. S. Woo:
  Optimizing the fabrication process for high performance graphene field effect transistors. 1602-1605
• 
  S.-L. Siu, Wing-Shan Tam, Hei Wong, Chi-Wah Kok, K. Kakusima, Hiroshi Iwai:
  Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors. 1606-1609
• 
  Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta:
  Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications. 1610-1612
• 
  B. L. Yang, Hei Wong, Kuniyuki Kakushima, Hiroshi Iwai:
  Improving the electrical characteristics of MOS transistors with CeO₂/La₂O₃ stacked gate dielectric. 1613-1616
• 
  Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta:
  Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor. 1617-1620
• 
  Matteo Meneghini, Matteo Dal Lago, L. Rodighiero, Nicola Trivellin, Enrico Zanoni, Gaudenzio Meneghesso:
  Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress. 1621-1626
• 
  Jer-Chyi Wang, Chih-Ting Lin, Chi-Hsien Huang, Chao-Sung Lai, Chin-Hsiang Liao:
  Charge storage and data retention characteristics of forming gas-annealed Gd₂O₃-nanocrystal nonvolatile memory cell. 1627-1631
• 
  Sihan Joseph Chen, Cher Ming Tan, Boon Khai Eric Chen, Zhi Yong Shaun Chua:
  Ensuring accuracy in optical and electrical measurement of ultra-bright LEDs during reliability test. 1632-1635
• 
  J. Liu, Hei Wong, Sik-Lam Siu, Chi-Wah Kok, Valeriu Filip:
  Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing. 1636-1639
• 
  Fei Ma, Yan Han, Shurong Dong, Meng Miao, Jianfeng Zheng, Jian Wu, Cheng-gong Han, Kehan Zhu:
  Investigation of ESD protection strategy in high voltage Bipolar-CMOS-DMOS process. 1640-1644
• 
  Wing-Shan Tam, Sik-Lam Siu, Oi-Ying Wong, Chi-Wah Kok, Hei Wong, Valeriu Filip:
  Modeling of terminal ring structures for high-voltage power MOSFETs. 1645-1650
• 
  Cheng-En Lue, I-Shun Wang, Chi-Hsien Huang, Yu-Ting Shiao, Hau-Cheng Wang, Chia-Ming Yang, Shu-Hao Hsu, Ching-Yu Chang, William Wang, Chao-Sung Lai:
  pH sensing reliability of flexible ITO/PET electrodes on EGFETs prepared by a roll-to-roll process. 1651-1654

Regular Research Papers

• 
  Masaoud Houshmand Kaffashian, Reza Lotfi, Khalil Mafinezhad, Hamid Mahmoodi:
  Impacts of NBTI/PBTI on performance of domino logic circuits with high-k metal-gate devices in nanoscale CMOS. 1655-1659
• 
  Gang Chen, Jerry Yu, Pui-To Lai:
  A study on MIS Schottky diode based hydrogen sensor using La₂O₃ as gate insulator. 1660-1664
• 
  A. R. Maligno, David C. Whalley, Vadim V. Silberschmidt:
  Thermal fatigue life estimation and delamination mechanics studies of multilayered MEMS structures. 1665-1678
• 
  Marco Lanuzza, Raffaele De Rose, Fabio Frustaci, Stefania Perri, Pasquale Corsonello:
  Comparative analysis of yield optimized pulsed flip-flops. 1679-1689
• 
  Rasidi Sule, Peter A. Olubambi, Bolanle Tolulope Abe, O. T. Johnson:
  Synthesis and characterization of sub-micron sized copper-ruthenium-tantalum composites for interconnection application. 1690-1698
• 
  Wen-Hwa Chen, Ching-Feng Yu, Hsien-Chie Cheng, Su-Tsai Lu:
  Crystal size and direction dependence of the elastic properties of Cu₃Sn through molecular dynamics simulation and nanoindentation testing. 1699-1710
• 
  M. Sadeghinia, Kaspar M. B. Jansen, Leo J. Ernst:
  Characterization of the viscoelastic properties of an epoxy molding compound during cure. 1711-1718
• 
  Wojciech Steplewski, Tomasz Serzysko, Grazyna Koziol, Andrzej Dziedzic:
  Preliminary assessment of the stability of thin- and polymer thick-film resistors embedded into printed wiring boards. 1719-1725
• 
  Zhaohui Chen, Qin Zhang, Kai Wang, Mingxiang Chen, Sheng Liu:
  Fluid-solid coupling thermo-mechanical analysis of high power LED package during thermal shock testing. 1726-1734
• 
  Rishad A. Shafik, Bashir M. Al-Hashimi, Jeffrey S. Reeve:
  System-level design optimization of reliable and low power multiprocessor system-on-chip. 1735-1748

Book Review

• 
  Nicholas Williard, Sony Mathew:
  Book review: Effective FMEAs. 1749

Volume 52, Numbers 9-10, September - October 2012

• 
  Mauro Ciappa, Paolo Cova, Francesco Iannuzzo, Gaudenzio Meneghesso:
  Editorial. 1751-1752

Keynote Papers

• 
  J. W. McPherson:
  Time dependent dielectric breakdown physics - Models revisited. 1753-1760
• 
  Paul Pfäffli, P. Tikhomirov, X. Xu, I. Avci, Y.-S. Oh, P. Balasingam, S. Krishnamoorthy, T. Ma:
  TCAD for reliability. 1761-1768
• 
  Gianluca Boselli:
  ESD design challenges in state-of-the-art analog technologies. 1769-1775

Topic A: Quality and Reliability Techniques for Devices and Systems

• 
  Marcantonio Catelani, Lorenzo Ciani, Giovanni Barile:
  A new design technique of TFT-LCD display for avionics application. 1776-1780
• 
  Rodrigo Possamai Bastos, Frank Sill Torres, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre:
  Novel transient-fault detection circuit featuring enhanced bulk built-in current sensor with low-power sleep-mode. 1781-1786
• 
  Yao Wang, Marius Enachescu, Sorin Dan Cotofana, Liang Fang:
  Variation tolerant on-chip degradation sensors for dynamic reliability management systems. 1787-1791
• 
  Nicoleta Cucu Laurenciu, Sorin Dan Cotofana:
  Context aware slope based transistor-level aging model. 1792-1796
• 
  C. Banc, J. Guinet, E. Doche:
  High performance electronics in long lifetime, continuous operation, industrial products: The art of balancing conflicting interests. 1797-1802
• 
  Luca Cola, M. De Tomasi, Riccardo Enrici Vaion, A. Mervic, P. Zabberoni:
  Read disturb on flash memories: Study on temperature annealing effect. 1803-1807
• 
  Giorgio De Pasquale, Marco Barbato, Valentina Giliberto, Gaudenzio Meneghesso, Aurelio Somà:
  Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation. 1808-1811
• 
  Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn:
  Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. 1812-1815
• 
  R. Llido, Pascal Masson, Arnaud Régnier, Vincent Goubier, Gérald Haller, Vincent Pouget, Dean Lewis:
  Effects of 1064 nm laser on MOS capacitor. 1816-1821
• 
  Paulo F. Butzen, Vinícius Dal Bem, André Inácio Reis, Renato P. Ribas:
  Design of CMOS logic gates with enhanced robustness against aging degradation. 1822-1826
• 
  Lutz Meinshausen, Hélène Frémont, Kirsten Weide-Zaage:
  Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers. 1827-1832
• 
  Marcantonio Catelani, Lorenzo Ciani:
  Experimental tests and reliability assessment of electronic ballast system. 1833-1836
• 
  Zhengliang Lv, Linda S. Milor, Shiyuan Yang:
  Statistical model of NBTI and reliability simulation for analogue circuits. 1837-1842
• 
  Samuel N. Pagliarini, G. G. dos Santos, Lirida Alves de Barros Naviner, Jean-François Naviner:
  Exploring the feasibility of selective hardening for combinational logic. 1843-1847
• 
  Weisheng Zhao, Yue Zhang, Thibaut Devolder, Jacques-Olivier Klein, Dafine Ravelosona, Claude Chappert, Pascale Mazoyer:
  Failure and reliability analysis of STT-MRAM. 1848-1852
• 
  Eduardo Nogueira, Manuel Vázquez, J. Mateos:
  Accelerated life test of high luminosity AlGaInP LEDs. 1853-1858
• 
  D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, Ali Ibrahim, Zoubir Khatir, A. Bouzourene:
  Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application. 1859-1864
• 
  Na Gong, Shixiong Jiang, Jinhui Wang, B. Aravamudhan, K. Sekar, Ramalingam Sridhar:
  Hybrid-cell register files design for improving NBTI reliability. 1865-1869
• 
  Hongbin Shi, F. X. Che, Cuihua Tian, Rui Zhang, Jong Tae Park, Toshitsugu Ueda:
  Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods. 1870-1875

Topic B1: Failure Mechanisms in SI Technologies and Nanoelectronics: Hot Carriers, High K...

• 
  G. Ghidini:
  Charge-related phenomena and reliability of non-volatile memories. 1876-1882
• 
  Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken:
  Defect-centric perspective of time-dependent BTI variability. 1883-1890
• 
  Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser:
  New insights on the PBTI phenomena in SiON pMOSFETs. 1891-1894
• 
  Philippe Chiquet, Pascal Masson, Romain Laffont, Gilles Micolau, Jérémy Postel-Pellerin, Frédéric Lalande, Bernard Bouteille, Jean-Luc Ogier:
  Investigation of the effects of constant voltage stress on thin SiO₂ layers using dynamic measurement protocols. 1895-1900
• 
  Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
  Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. 1901-1904
• 
  Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N.-H. Lee, Gang-Jun Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
  Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. 1905-1908
• 
  Enrique Miranda, Takamasa Kawanago, Kuniyuki Kakushima, Jordi Suñé, Hiroshi Iwai:
  Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. 1909-1912
• 
  Guido T. Sasse, Martin Combrié:
  The temperature dependence of mixed mode degradation in bipolar transistors. 1913-1917
• 
  Louis Gerrer, Stanislav Markov, Salvatore M. Amoroso, Fikru Adamu-Lema, Asen Asenov:
  Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs. 1918-1923
• 
  Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. González, Montserrat Nafría, Xavier Aymerich, Eddy Simoen:
  Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. 1924-1927
• 
  Gabriele Navarro, Sarra Souiki, Alain Persico, Veronique Sousa, Jean-François Nodin, Carine Jahan, François Aussenac, Vincent Delaye, Olga Cueto, Luca Perniola, Barbara De Salvo:
  High temperature reliability of μtrench Phase-Change Memory devices. 1928-1931
• 
  Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken:
  BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. 1932-1935
• 
  Mingu Kang, Ilgu Yun:
  Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs. 1936-1939
• 
  Song Lan, Cher Ming Tan, Kevin Wu:
  Reliability study of LED driver - A case study of black box testing. 1940-1944
• 
  Seung Min Lee, Chong-Gun Yu, Seung Min Jeong, Won-Ju Cho, Jong Tae Park:
  Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs. 1945-1948
• 
  Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
  Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. 1949-1952

Topic B2: Characterization and Modelling of Failure Mechanisms in Silicon Technologies and Nanoelectronics: Low K, CU Interconnects

• 
  Chang-Chih Chen, Fahad Ahmed, Dae Hyun Kim, Sung Kyu Lim, Linda Milor:
  Backend dielectric reliability simulator for microprocessor system. 1953-1959
• 
  Vincent M. Dwyer:
  Diffusivity variation in Electromigration failure. 1960-1965
• 
  Rainer Pelzer, Michael Nelhiebel, Robert Zink, Stefan Wöhlert, Alice Lassnig, Golta Khatibi:
  High temperature storage reliability investigation of the Al-Cu wire bond interface. 1966-1970
• 
  Biljana Dimcic, Riet Labie, Joke De Messemaeker, Kris Vanstreels, Kris Croes, Bert Verlinden, Ingrid De Wolf:
  Diffusion growth of Cu₃Sn phase in the bump and thin film Cu/Sn structures. 1971-1974
• 
  Yasmin Abdul Wahab, Anuar Fadzil Ahmad, Hanim Hussin, Norhayati Soin:
  Reduction of annealed-induced wafer defects in dual-damascene copper interconnects. 1975-1980
• 
  Roberto Lacerda de Orio, Hajdin Ceric, Siegfried Selberherr:
  Electromigration failure in a copper dual-damascene structure with a through silicon via. 1981-1986
• 
  Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein:
  Simulation of the influence of TiAl₃ layers on the thermal-electrical and mechanical behaviour of Al metallizations. 1987-1992
• 
  Mathias Plappert, Oliver Humbel, Angelika Koprowski, Mathias Nowottnick:
  Characterization of Ti diffusion in PVD deposited WTi/AlCu metallization on monocrystalline Si by means of secondary ion mass spectroscopy. 1993-1997

Topic B3: Characterisation and Modelling of Failure Mechanisms in Silicon Technologies And Nanoelectronics: ESD and Latch-UP

• 
  Philippe Galy, Johan Bourgeat, Jean Jimenez, Nicolas Guitard, Alexandre Dray, Ghislain Troussier, Blaise Jacquier, David Marin-Cudraz:
  Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology. 1998-2004
• 
  Gerhard Groos:
  Characterisation method for chip card ESD events causing terminal failures. 2005-2009
• 
  Morgan Cason, Giuseppe Livio Gobbato, Luca Manfredi, Maurizio Nessi, Raffaele Ricci, Paolo Pulici, Claudio Maria Villa:
  Thermal overstress of Cu wire under pulsed current condition. 2010-2013
• 
  Jae-Seong Jeong:
  Failure mechanism and reliability test method for USB interface circuitry on CPUs for mobile devices. 2014-2018

Topic C1: Advanced Techniques for Failure Analysis and Case Studies: EOBT

• 
  Andrea Irace:
  Infrared Thermography application to functional and failure analysis of electron devices and circuits. 2019-2023
• 
  Carlo Pagano, Christian Boit, Arkadiusz Glowacki, Reiner Leihkauf, Yoshiyuki Yokoyama:
  Comparison of FET electro-optical modulation for 1300 nm and 1064 nm laser sources. 2024-2030
• 
  Arkadiusz Glowacki, Christian Boit, Philippe Perdu:
  Optimum Si thickness for backside detection of photon emission using Si-CCD. 2031-2034
• 
  Alexandre Sarafianos, Roxane Llido, Jean-Max Dutertre, Olivier Gagliano, Valerie Serradeil, Mathieu Lisart, Vincent Goubier, Assia Tria, Vincent Pouget, Dean Lewis:
  Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology. 2035-2038
• 
  Tigran Nshanian, Pat N. Grillot, Michael Holub, Satoshi Watanabe, Werner Götz:
  Effect of residual stress on the electrical activity of dislocations in GaN light emitting diodes. 2039-2042
• 
  M. R. Bruce, L. K. Ross, C. Scholz, L. Joshi, Vrajesh Dave, C. M. Chua:
  Through silicon in-circuit logic analysis for localizing logic pattern failures. 2043-2049
• 
  Marco Sanna, Matteo Medda:
  FIB/TEM analysis supported by μ-probing approach to identify via marginality. 2050-2053
• 
  Eddie Redmard, Deny Hanan, Alex Shevachman:
  Detection of DR violations in ASIC components using photon emission techniques. 2054-2057
• 
  Marie Castignolles, Stéphane Alves, Philippe Rousseille, Thomas Zirilli:
  Backside failure analysis application of light scattering for active silicon defect detection. 2058-2063
• 
  Giancarlo Calvagno, Giuseppe Muni, Andrea Jossa, Domenico Mello:
  Sample Preparation methodology for ultra thin oxide damage in Metal-Insulator-Metal capacitors. 2064-2067
• 
  Amjad Deyine, Emmanuel Doche, F. Battistella, Christophe Banc:
  A challenging case study resolved by using the Dynamic Laser Stimulation technique. 2068-2072
• 
  Jia Lu, BoCheng Cao, WenShe Wu, YuFeng Dai, ChuangJun Huang, Giovanna Mura:
  MIM capacitor-related early-stage field failures. 2073-2076

Topic C2: Advanced Techniques for Failure Analysis and Case Studies: Other Advanced Characterisation Techniques

• 
  Lucio Cinà, Aldo Di Carlo, Andrea Reale:
  Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis. 2077-2080
• 
  Akihiko Watanabe, Ichiro Omura:
  Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustic Tomography (SAT). 2081-2086
• 
  Guillaume Bascoul, Philippe Perdu, Maryse Béguin, Dean Lewis:
  High performance thermography with InGaAs photon counting camera. 2087-2092
• 
  Isabella Rossetto, Matteo Meneghini, Tiziana Tomasi, Dai Yufeng, Gaudenzio Meneghesso, Enrico Zanoni:
  Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits. 2093-2097
• 
  Joerg Jatzkowski, Michél Simon-Najasek, Frank Altmann:
  Novel techniques for dopant contrast analysis on real IC structures. 2098-2103
• 
  Raoul van Gastel, Gregor Hlawacek, Harold J. W. Zandvliet, Bene Poelsema:
  Subsurface analysis of semiconductor structures with helium ion microscopy. 2104-2109
• 
  Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen:
  Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO₂/Pt structures. 2110-2114
• 
  Mario Poschgan, Josef Maynollo, Michael Inselsbacher:
  Inverted high frequency Scanning Acoustic Microscopy inspection of power semiconductor devices. 2115-2119
• 
  Yang Lu, Euan Ramsay, Christopher R. Stockbridge, Abdulkadir Yurt, F. Hakan Köklü, Thomas G. Bifano, M. Selim Ünlü, Bennett B. Goldberg:
  Spherical aberration correction in aplanatic solid immersion lens imaging using a MEMS deformable mirror. 2120-2122
• 
  Jan Gaudestad, Vladimir Talanov, Po Chih Huang:
  Space Domain Reflectometry for opens detection location in microbumps. 2123-2126
• 
  Rosa Lucia Torrisi, Vittorio Maiorana, Roberto Nicolosi, Giovanni Presti:
  Catastrophic flip-chip failures at thermal cycles caused by micro-cracks in passivation layer, present only in the spacing between minimum width stripes of last metal level. 2127-2134
• 
  Andreas Rummel, Klaus Schock, Andrew Smith, Stephan Kleindiek:
  A new approach for making electrically conductive interconnections between small contacts in failure analysis. 2135-2138
• 
  Mauro Ciappa, Emre Ilgünsatiroglu, Alexey Yu. Illarionov:
  Monte Carlo simulation of emission site, angular and energy distributions of secondary electrons in silicon at low beam energies. 2139-2143

Topic D: Failure Mechanisms in Microwave, Wide Band-Gap And Photonic Devices

• 
  Richard Lossy, Hervé Blanck, Joachim Würfl:
  Reliability studies on GaN HEMTs with sputtered Iridium gate module. 2144-2148
• 
  Arvydas Matulionis, Juozapas Liberis, Emilis Sermuksnis, Linas Ardaravicius, Artur Simukovic, Cemil Kayis, Congyong Zhu, Romualdo Ferreyra, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç:
  Window for better reliability of nitride heterostructure field effect transistors. 2149-2152
• 
  Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni:
  Field plate related reliability improvements in GaN-on-Si HEMTs. 2153-2158
• 
  Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière:
  Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. 2159-2163
• 
  Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni:
  Phosphors for LED-based light sources: Thermal properties and reliability issues. 2164-2167
• 
  Sihan Chen, Cher Ming Tan, Guan Hong Tan, Feifei He:
  Degradation behavior of high power light emitting diode under high frequency switching. 2168-2173
• 
  So-Ra Gang, Deokgi Kim, Sang-Mook Kim, Nam Hwang, Kwang-Cheol Lee:
  Improvement in the moisture stability of CaS: Eu phosphor applied in light-emitting diodes by titania surface coating. 2174-2179
• 
  Anton E. Chernyakov, Michael E. Levinshtein, Pavel V. Petrov, Natalia M. Shmidt, Evgeniia I. Shabunina, Alexander L. Zakheim:
  Failure mechanisms in blue InGaN/GaN LEDs for high power operation. 2180-2183
• 
  Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux:
  Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. 2184-2187
• 
  Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels, Stefaan Decoutere:
  Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. 2188-2193
• 
  Paul Marko, Matteo Meneghini, Sergey Bychikhin, Denis Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany:
  IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. 2194-2199
• 
  Benoit Lambert, Jim Thorpe, Reza Behtash, Bernd Schauwecker, Franck Bourgeois, Helmut Jung, Joëlle Bataille, Patrick Mezenge, Cyril Gourdon, Catherine Ollivier, Didier Floriot, Hervé Blanck:
  Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification. 2200-2204
• 
  Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane:
  Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. 2205-2209
• 
  Peter Ersland, Shivarajiv Somisetty:
  Reliability validation of compound semiconductor foundry processes. 2210-2214
• 
  Suehye Park, Edward Namkyu Cho, Ilgu Yun:
  Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors. 2215-2219
• 
  Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens:
  Wafer scale and reliability investigation of thin HfO₂·AlGaN/GaN MIS-HEMTs. 2220-2223
• 
  Satoshi Ono, Mauro Ciappa, Shigeru Hiura, Wolfgang Fichtner:
  Electro-thermal simulation in the time domain of GaN HEMT for RF switch-mode amplifier. 2224-2227

Topic E: Packaging, Assemblies, Passive Components and MEMS

• 
  Harrie A. C. Tilmans, Jeroen De Coster, Philippe Hélin, Vladimir Cherman, Anne Jourdain, Piet De Moor, Bart Vandevelde, Nga P. Pham, Joseph Zekry, Ann Witvrouw, Ingrid De Wolf:
  MEMS packaging and reliability: An undividable couple. 2228-2234
• 
  Thomas Kuenzig, Gabriele Schrag, Jacopo Iannacci:
  Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology. 2235-2239
• 
  Matroni Koutsoureli, Loukas Michalas, George J. Papaioannou:
  Temperature effects on the bulk discharge current of dielectric films of MEMS capacitive switches. 2240-2244
• 
  Anna Persano, Augusto Tazzoli, Paola Farinelli, Gaudenzio Meneghesso, Pietro Siciliano, Fabio Quaranta:
  K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability. 2245-2249
• 
  Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán:
  Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. 2250-2255
• 
  Fangzhou Ling, Jeroen De Coster, Ann Witvrouw, Jean-Pierre Celis, Ingrid De Wolf:
  Study of glass frit induced stiction using a micromirror array. 2256-2260
• 
  Alexis Peschot, Christophe Poulain, Frédéric Souchon, Pierre-Louis Charvet, Nelly Bonifaci, Olivier Lesaint:
  Contact degradation due to material transfer in MEM switches. 2261-2266
• 
  Loukas Michalas, Anurag Garg, Ayyaswamy Venkattraman, Matroni Koutsoureli, Alina A. Alexeenko, Dimitrios Peroulis, George J. Papaioannou:
  A study of field emission process in electrostatically actuated MEMS switches. 2267-2271
• 
  Ahmad Khaled, Moatassim Raoof, Vladimir Cherman, Karoline Jans, Mohammad Abbas, Shaker Ebrahim, Goerge Bryce, Peter Verheyen, Ann Witvrouw, Ingrid De Wolf:
  Effect of the functionalization process on the performance of SiGe MEM resonators used for bio-molecular sensing. 2272-2277
• 
  Samed Barnat, Hélène Frémont, Alexandrine Guédon-Gracia, Eric Cadalen:
  Evaluation by three-point-bend and ball-on-ring tests of thinning process on silicon die strength. 2278-2282
• 
  Ralf Schmidt, Christian König, Peter Prenosil:
  Novel wire bond material for advanced power module packages. 2283-2288
• 
  Michael Goroll, Reinhard Pufall:
  Determination of adhesion and delamination prediction for semiconductor packages by using Grey Scale Correlation and Cohesive Zone Modelling. 2289-2293
• 
  Xavier Perpiñà, Robert J. Werkhoven, Jiri Jakovenko, J. Formánek, Miquel Vellvehí, Xavier Jordà, Jos M. G. Kunen, Peter Bancken, Pieter Jan Bolt:
  Design for reliability of solid state lighting systems. 2294-2300
• 
  H. Q. S. Dang, Martin R. Corfield, Alberto Castellazzi, C. Mark Johnson, Patrick Wheeler:
  Repetitive high peak current pulsed discharge film-capacitor reliability testing. 2301-2305
• 
  Jean-Baptiste Jullien, Bernard Plano, Hélène Frémont:
  Pushing toward the limits of acceleration: Example on wire-bond assemblies. 2306-2309
• 
  Nuria Torres Matabosch, Mehmet Kaynak, Fabio Coccetti, Matthias Wietstruck, Bernd Tillack, Jean Louis Cazaux:
  Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS. 2310-2313
• 
  Luis A. Navarro, Xavier Perpiñà, Miquel Vellvehí, Viorel Banu, Xavier Jordà:
  Thermal cycling analysis of high temperature die-attach materials. 2314-2320
• 
  François Le Henaff, Stephane Azzopardi, Jean-Yves Delétage, Eric Woirgard, Serge Bontemps, Julien Joguet:
  A preliminary study on the thermal and mechanical performances of sintered nano-scale silver die-attach technology depending on the substrate metallization. 2321-2325
• 
  Jae-Seong Jeong, Nochang Park, Changwoon Han:
  Field failure mechanism study of solder interconnection for crystalline silicon photovoltaic module. 2326-2330
• 
  Rui Zhang, Hongbin Shi, Yuehong Dai, Jong Tae Park, Toshitsugu Ueda:
  Thermo-mechanical reliability optimization of MEMS-based quartz resonator using validated finite element model. 2331-2335

Topic F: Power, Automotive, Aerospace and Industrial Applications

• 
  Werner Kanert:
  Active cycling reliability of power devices: Expectations and limitations. 2336-2341
• 
  Ephraim Suhir:
  When adequate and predictable reliability is imperative. 2342-2346
• 
  Oliver Schilling, Marc Schäfer, Krzysztof Mainka, Markus Thoben, Frank Sauerland:
  Power cycling testing and FE modelling focussed on Al wire bond fatigue in high power IGBT modules. 2347-2352
• 
  Bernhard Czerny, Martin Lederer, Bernhard Nagl, Alexander Trnka, Golta Khatibi, Markus Thoben:
  Thermo-mechanical analysis of bonding wires in IGBT modules under operating conditions. 2353-2357
• 
  Ashraf Ahmed, Yasaman Shadrokh, Lee Coulbeck, Alberto Castellazzi, C. Mark Johnson:
  A closed-loop IGBT non-destructive tester. 2358-2362
• 
  Giovanni Busatto, Valentina De Luca, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi:
  Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. 2363-2367
• 
  Jaume Roig, Julien Lebon, Steven Vandeweghe, Samir Mouhoubi, Filip Bauwens:
  Improved current filament control during Zener diode zapping. 2368-2373
• 
  Stefano de Filippis, Helmut Köck, Michael Nelhiebel, Vladimír Kosel, Stefan Decker, Michael Glavanovics, Andrea Irace:
  Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices. 2374-2379
• 
  Yuka Morisawa, Takuya Kodama, Satoshi Matsumoto:
  Design guideline of a thin film SOI power MOSFET for high thermal stability. 2380-2384
• 
  Michele Riccio, Giuseppe De Falco, Luca Maresca, Giovanni Breglio, Ettore Napoli, Andrea Irace, Yohei Iwahashi, Paolo Spirito:
  3D electro-thermal simulations of wide area power devices operating in avalanche condition. 2385-2390
• 
  Paolo Cova, Nicola Delmonte:
  Thermal modeling and design of power converters with tight thermal constraints. 2391-2396
• 
  Tilo Poller, Thomas Basler, Magnar Hernes, Salvatore D'Arco, Josef Lutz:
  Mechanical analysis of press-pack IGBTs. 2397-2402
• 
  Erik E. Kostandyan, Ke Ma:
  Reliability estimation with uncertainties consideration for high power IGBTs in 2.3 MW wind turbine converter system. 2403-2408
• 
  Ana Villamor-Baliarda, Piet Vanmeerbeek, Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Jaume Roig, David Flores, Peter Moens:
  Influence of charge balance on the robustness of trench-based super junction diodes. 2409-2413
• 
  Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara:
  Thermal instability effects in SiC Power MOSFETs. 2414-2419
• 
  Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo:
  Unclamped repetitive stress on 1200 V normally-off SiC JFETs. 2420-2425
• 
  Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso:
  Single- and double-heterostructure GaN-HEMTs devices for power switching applications. 2426-2430
• 
  Yohei Iwahashi, Yoshihito Mizuno, Masafumi Hara, Ryuzo Tagami, Masanori Ishigaki:
  Analysis of current distribution on IGBT under unclamped inductive switching conditions. 2431-2434
• 
  Aleksandr S. Petrov, Viktor N. Ulimov:
  Some features of degradation in bipolar transistors at different test conditions for total ionizing dose effect. 2435-2437
• 
  Akram Eddahech, Olivier Briat, Eric Woirgard, Jean-Michel Vinassa:
  Remaining useful life prediction of lithium batteries in calendar ageing for automotive applications. 2438-2442
• 
  Yasushi Yamada:
  Power semiconductor module using a bonding film with anisotropic thermal conduction. 2443-2446
• 
  Markus Ackermann, Verena Hein, Christian Kovács, Kirsten Weide-Zaage:
  A design for robust wide metal tracks. 2447-2451
• 
  Sabrina Rathgeber, R. Bauer, Andreas Otto, Erik Peter, Jürgen Wilde:
  Harsh environment application of electronics - Reliability of copper wiring and testability thereof. 2452-2456
• 
  Zhifeng Dou, Frédéric Richardeau, Emmanuel Sarraute, Vincent Bley, Jean-Marc Blaquière, Claire Vella, Gilles Gonthier:
  PCB dual-switch fuse with energetic materials embedded: Application for new fail-safe and fault-tolerant converters. 2457-2464
• 
  Stefania Baccaro, Giovanni Busatto, Mauro Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, Agostino Lanza, Marco Riva, Annunziata Sanseverino, Giorgio Spiazzi:
  Reliability oriented design of power supplies for high energy physics applications. 2465-2470
• 
  Ignasi Cortés, Xavier Perpiñà, Jesús Urresti, Xavier Jordà, José Rebollo:
  Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling. 2471-2476
• 
  Hamid Gualous, Roland Gallay, Monzer Al Sakka, Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Boudart:
  Calendar and cycling ageing of activated carbon supercapacitor for automotive application. 2477-2481
• 
  Cécile Weulersse, Florent Miller, Dan Alexandrescu, Erwin Schaefer, Olivier Crépel, Rémi Gaillard:
  Test methodology of a new upset mechanism induced by protons in deep sub-micron devices. 2482-2486

Topic G: Reliability of Photovoltaic and Organic Devices: Thin Film, Concentration, OLED, TFT, ...

• 
  Alessia Quatela, Antonio Agresti, Simone Mastroianni, Sara Pescetelli, Thomas M. Brown, Andrea Reale, Aldo Di Carlo:
  Fabrication and reliability of dye solar cells: A resonance Raman scattering study. 2487-2489
• 
  Nicola Wrachien, Daniel Bari, Jaroslav Kovác, Jan Jakabovic, Daniel Donoval, Gaudenzio Meneghesso, Andrea Cester:
  Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure. 2490-2494
• 
  Daniele Bari, Nicola Wrachien, Roberto Tagliaferro, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, Andrea Cester:
  Reliability study of dye-sensitized solar cells by means of solar simulator and white LED. 2495-2499
• 
  Raffaele De Rose, Antonio Malomo, Paolo Magnone, Felice Crupi, Giorgio Cellere, Marco Martire, Diego Tonini, Enrico Sangiorgi:
  A methodology to account for the finger interruptions in solar cell performance. 2500-2503
• 
  Seul Ki Lee, Sung Il Hong, Yeon Ho Lee, Se Won Lee, Won-Ju Cho, Jong Tae Park:
  Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics. 2504-2507
• 
  Loukas Michalas, Anastasia Syntychaki, Matroni Koutsoureli, George J. Papaioannou, Apostolos T. Voutsas:
  A temperature study of photosensitivity in SLS polycrystalline silicon TFTs. 2508-2511

Volume 52, Number 11, November 2012

Research Papers

• 
  Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix:
  Microscopic scale characterization and modeling of transistor degradation under HC stress. 2513-2520
• 
  Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li:
  The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. 2521-2526
• 
  X. D. Huang, Pui-To Lai, Johnny K. O. Sin:
  Performance of nonvolatile memory by using band-engineered SrTiO₃/HfON stack as charge-trapping layer. 2527-2531
• 
  Antonio Cerdeira, Magali Estrada, Blanca S. Soto-Cruz, Benjamín Iñíguez:
  Modeling the behavior of amorphous oxide thin film transistors before and after bias stress. 2532-2536
• 
  Nebojsa D. Jankovic:
  Numerical simulations of N-type CdSe poly-TFT electrical characteristics with trap density models of Atlas/Silvaco. 2537-2541
• 
  Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren:
  Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. 2542-2546
• 
  Abel Fontserè, A. Pérez-Tomás, Marcel Placidi, N. Baron, S. Chenot, Yvon Cordier, J. C. Moreno:
  Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1). 2547-2550
• 
  Chao-Hung Chen, Hsien-Chin Chiu, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau:
  High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design. 2551-2555
• 
  Hsien-Chin Chiu, Chao-Wei Lin, Hsuan-Ling Kao, Geng-Yen Lee, Jen-Inn Chyi, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau:
  A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate. 2556-2560
• 
  Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani:
  Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life. 2561-2567
• 
  Guoxuan Qin, Yuexing Yan, Ningyue Jiang, Jianguo Ma, Pingxi Ma, Marco Racanelli, Zhenqiang Ma:
  RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures. 2568-2571
• 
  Kalyan Koley, Binit Syamal, Atanu Kundu, N. Mohankumar, Chandan Kumar Sarkar:
  Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions. 2572-2578
• 
  Mohammad Reza Moslemi, Mohammad Hossein Sheikhi, Kamyar Saghafi, Mohammad Kazem Moravvej-Farshi:
  Electronic properties of a dual-gated GNR-FET under uniaxial tensile strain. 2579-2584
• 
  S. Mansouri, R. Bourguiga, Fahrettin Yakuphanoglu:
  Modeling of organic thin film field-effect transistors based on pentacene in saturation regime: Effect of light illumination. 2585-2591
• 
  Hsien-Chin Chiu, Che-Kai Lin, Chao-Wei Lin, Chao-Sung Lai:
  Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles. 2592-2596
• 
  Q. B. Tao, P. T. Lai:
  Improved performance of GeON as charge storage layer in flash memory by optimal annealing. 2597-2601
• 
  Akiko Ohata, Young-Ho Bae, Sorin Cristoloveanu, Thomas Signamarcheix, J. Widiez, Bruno Ghyselen, Olivier Faynot, Laurent Clavelier:
  Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body. 2602-2608
• 
  Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson:
  Circuit design and experimental test of a high power IGBT non-destructive tester. 2609-2616
• 
  Yvan Avenas, Laurent Dupont:
  Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions - Comparison with infrared measurements. 2617-2626
• 
  Chun-Yu Lin, Tang-Long Chang, Ming-Dou Ker:
  Investigation on CDM ESD events at core circuits in a 65-nm CMOS process. 2627-2631
• 
  Li Li, Hongxia Liu, Zhaonian Yang, Linlin Chen:
  A novel co-design and evaluation methodology for ESD protection in RFIC. 2632-2639
• 
  Artur Rydosz, Wojciech Maziarz, Tadeusz Pisarkiewicz, K. Domanski, Piotr Grabiec:
  A gas micropreconcentrator for low level acetone measurements. 2640-2646
• 
  Han-Chang Tsai:
  Reliable study of time- and frequency-domain EMI-induced noise in Wien bridge oscillator. 2647-2654
• 
  H. D. Yen, Jiann-Shiun Yuan, Ruey-Lue Wang, G. W. Huang, W. K. Yeh, F. S. Huang:
  RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments. 2655-2659
• 
  John H. Lau, Tang Gong Yue:
  Effects of TSVs (through-silicon vias) on thermal performances of 3D IC integration system-in-package (SiP). 2660-2669
• 
  Qianwen Chen, Cui Huang, Zheyao Wang:
  Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs). 2670-2676
• 
  Andrej Ivankovic, Kris Vanstreels, Daniel Vanderstraeten, Guy Brizar, Renaud Gillon, Eddy Blansaer, Bart Vandevelde:
  Comparison of experimental methods for the extraction of the elastic modulus of molding compounds used in IC packaging. 2677-2684
• 
  Salomeh Tabatabaei, Ashavani Kumar, Haleh Ardebili, Peter J. Loos, Pulickel M. Ajayan:
  Synthesis of Au-Sn alloy nanoparticles for lead-free electronics with unique combination of low and high melting temperatures. 2685-2689
• 
  Ming-Hung Shu, Bi-Min Hsu, Min-Chuan Hu:
  Optimal combination of soldering conditions of BGA for halogen-free and lead-free SMT-green processes. 2690-2700
• 
  Dhafer Abdulameer Shnawah, Suhana Binti Mohd Said, Mohd Faizul Mohd Sabri, Irfan Anjum Badruddin, Fa Xing Che:
  Novel Fe-containing Sn-1Ag-0.5Cu lead-free solder alloy with further enhanced elastic compliance and plastic energy dissipation ability for mobile products. 2701-2708
• 
  Juha Niittynen, Janne Kiilunen, Jussi Putaala, Ville Pekkanen, Matti Mäntysalo, Heli Jantunen, Donald Lupo:
  Reliability of ICA attachment of SMDs on inkjet-printed substrates. 2709-2715
• 
  Hitoshi Sakurai, Keun-Soo Kim, Kiju Lee, Chang-Jae Kim, Youichi Kukimoto, Katsuaki Suganuma:
  Effects of Cu contents in flux on microstructure and joint strength of Sn-3.5Ag soldering with electroless Ni-P/Au surface finish. 2716-2722
• 
  Peter Filipp Fuchs, Gerald Pinter, Maximilian Tonjec:
  Determination of the orthotropic material properties of individual layers of printed circuit boards. 2723-2730
• 
  Emeka H. Amalu, Ndy N. Ekere:
  Prediction of damage and fatigue life of high-temperature flip chip assembly interconnections at operations. 2731-2743
• 
  Wan Ho Song, Michael Mayer, Norman Y. Zhou, S. H. Kim, J. S. Hwang, J. T. Moon:
  Effect of EFO parameters and superimposed ultrasound on work hardening behavior of palladium coated copper wire in thermosonic ball bonding. 2744-2748
• 
  Fuliang Wang, Yun Chen:
  Modeling study of thermosonic flip chip bonding process. 2749-2755
• 
  Yung-Sen Lin, Jian-Zhi Xu, Shih-Wei Tien, Shih-Chan Hung, Wei-Li Yuan, Tsair-Wang Chung, Char-Ming Huang:
  Enhanced anisotropic conductive film (ACF) void-free bonding for Chip-On-Glass (COG) packages by means of low temperature plasmas. 2756-2762
• 
  D. Farley, Yi Zhou, A. Dasgupta, J. W. C. DeVries:
  An adaptive Cu trace fatigue model based on average cross-section strain. 2763-2772
• 
  Qingchuan He, Wenhua Chen, Jun Pan, Ping Qian:
  Improved step stress accelerated life testing method for electronic product. 2773-2780

Review Paper

• 
  Mohammad Hossein Neishaburi, Zeljko Zilic:
  An infrastructure for debug using clusters of assertion-checkers. 2781-2798

Research Papers

• 
  Hector Villacorta, Víctor H. Champac, Sebastià A. Bota, Jaume Segura:
  Resistive bridge defect detection enhancement under parameter variations combining Low V_DD and body bias in a delay based test. 2799-2804
• 
  Hossein Aghababa, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram:
  Probability calculation of read failures in nano-scaled SRAM cells under process variations. 2805-2811
• 
  Mohammad Maghsoudloo, Hamid R. Zarandi, Navid Khoshavi:
  An efficient adaptive software-implemented technique to detect control-flow errors in multi-core architectures. 2812-2828
• 
  Hongge Li, Jinpeng Ding, Yongjun Pan:
  Cell array reconfigurable architecture for high-efficiency AES system. 2829-2836
• 
  Daniel Gil-Tomas, Joaquin Gracia-Moran, Juan-Carlos Baraza-Calvo, Luis J. Saiz-Adalid, Pedro J. Gil-Vicente:
  Studying the effects of intermittent faults on a microcontroller. 2837-2846

Research Note

• 
  W. S. Lau, Peizhen Yang, S. Y. Siah, L. Chan:
  The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current. 2847-2850
• 
  Yi-Shao Lai, Meng-Kai Shih, Chang-Chi Lee, Tong Hong Wang:
  Structural design guideline to minimize extreme low-k delamination potential in 40 nm flip-chip packages. 2851-2855
• 
  Wang Ying, Ji Feng-li, Gao Song-song:
  Finite element analysis of thermal stress for different Cu interconnects structure. 2856-2860

Book Review

• 
  Philip Hower:
  Semiconductor Power Devices, Physics, Characteristics, Reliability, by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker, Springer-Verlag, Berlin Heidelberg (2011). ISBN 978-3-642-11124-2. 2861

Volume 52, Number 12, December 2012

• 
  Peter Ersland, Roberto Menozzi:
  Editorial. 2863

Special Section: ROCS 2012

• 
  William J. Roesch:
  Using a new bathtub curve to correlate quality and reliability. 2864-2869
• 
  Peter J. Zampardi, Cristian Cismaru, Hal Banbrook, Bin Li:
  Measuring seam/crack formation in interconnect metallization. 2870-2874
• 
  Donghyun Jin, Jesús A. del Alamo:
  Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs. 2875-2879
• 
  William McGenn, Michael J. Uren, Johannes Benedikt, Paul J. Tasker:
  Development of an RF IV waveform based stress test procedure for use on GaN HFETs. 2880-2883
• 
  David J. Cheney, Rick Deist, Brent P. Gila, Jennilee Navales, Fan Ren, Stephen J. Pearton:
  Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping. 2884-2888

Regular Review Paper

• 
  Lutz Meinshausen, Kirsten Weide-Zaage, Hélène Frémont:
  Electro- and thermo-migration induced failure mechanisms in Package on Package. 2889-2906

Regular Research Papers

• 
  Jiseok Kim, Siddarth A. Krishnan, Sudarshan Narayanan, Michael P. Chudzik, Massimo V. Fischetti:
  Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs. 2907-2913
• 
  I. Izuddin, M. H. Kamaruddin, Anis Nurashikin Nordin, Norhayati Soin:
  Trench DMOS interface trap characterization by three-terminal charge pumping measurement. 2914-2919
• 
  Yong Tang, Bo Wang, Ming Chen, Binli Liu:
  Simulation model and parameter extraction of Field-Stop (FS) IGBT. 2920-2931
• 
  Jason B. Steighner, Jiann-Shiun Yuan:
  Examination of hot carrier effects of the AlGaAs/InGaAs pHEMT through device simulation. 2932-2940
• 
  Jincan Zhang, Yuming Zhang, HongLiang Lv, Yimen Zhang, Shi Yang:
  The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors. 2941-2947
• 
  Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi:
  Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability. 2948-2954
• 
  Gilson I. Wirth, Dragica Vasileska, N. Ashraf, Lucas Brusamarello, R. Della Giustina, P. Srinivasan:
  Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants. 2955-2961
• 
  Jue Li, Markus Turunen, Sini Niiranen, Hongtao Chen, Mervi Paulasto-Kröckel:
  A reliability study of adhesion mechanism between liquid crystal polymer and silicone adhesive. 2962-2969
• 
  I. J. Kim, H. K. Moon, J. H. Lee, Nae-Eung Lee, J. W. Jung, S. H. Cho:
  Silicon nitride etch characteristics in SF₆/O₂ and C₃F₆O/O₂ plasmas and evaluation of their global warming effects. 2970-2974
• 
  Takuya Naoe, Hirotaka Komoda, Tamao Ikeuchi, Kohichi Yokoyama:
  Via high resistance failure analysis of LSI devices induced by multiple factors related to process and design. 2975-2981
• 
  Emeka H. Amalu, Ndy N. Ekere:
  High-temperature fatigue life of flip chip lead-free solder joints at varying component stand-off height. 2982-2994
• 
  Ryan S. H. Yang, Derek R. Braden, Guang-Ming Zhang, David M. Harvey:
  An automated ultrasonic inspection approach for flip chip solder joint assessment. 2995-3001
• 
  Junchao Liu, Tielin Shi, Ke Wang, Zirong Tang, Guanglan Liao:
  Defect detection of flip-chip solder joints using modal analysis. 3002-3010
• 
  I. Gershman, Joseph B. Bernstein:
  Structural health monitoring of solder joints in QFN package. 3011-3016
• 
  Takuya Naoe, Hirotaka Komoda:
  Decapsulation technique using electrochemical etching for failure analysis of WLCSP n-type Si assembled module devices. 3017-3021
• 
  Mustapha Faqir, T. Batten, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, Hervé Blanck, S. Rochette, Olivier Vendier, Martin Kuball:
  Improved thermal management for GaN power electronics: Silver diamond composite packages. 3022-3025
• 
  Saeed Haji-Nasiri, Rahim Faez, Mohammad Kazem Moravvej-Farshi:
  Stability analysis in multiwall carbon nanotube bundle interconnects. 3026-3034
• 
  Hélène Frémont, Geneviève Duchamp, Alexandrine Guédon-Gracia, Frédéric Verdier:
  A methodological approach for predictive reliability: Practical case studies. 3035-3042
• 
  Fatemeh Jalali, Safieh Khodadoustan, Alireza Ejlali:
  Cooperative Hybrid ARQ in Solar Powered Wireless Sensor Networks. 3043-3052