2CL4509 450mA 9.

0kV
High Voltage Silicon Diodes for Micro-wave oven
-------------------------------------------------------------------------------------------------------------------------
INTRODUCE: SHAPE DISPLAY: Part Marking:
HVGT high voltage silicon rectifier diodes is made Code:
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and T4509
through professional testing equipment inspection HVGT
qualified after to customers.
FEATURES: Cathode Mark:
1. High overload surge capability.
2. High Current,Low Forward Voltage.
3. Avalanche Characteristic.
4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-722
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. High voltage power supply rectifier.
2. High voltage rectifier circuit for microwave
oven.
3. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.50 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: Ta=25°C (Absolute Maximum Ratings)
Items Symbols Condition Data Value Units
Repetitive Peak Renerse Voltage VRRM 9.0 kV
60HZ Half-Sine Wave, Resistance Load,
Average Forward Current Maximum IFAVM 450 mA
Ta=60°C
Non-Repetitive Forward Surge Current IFSM 60Hz Half-Sine Wave; 8.3mS; 1Cycle 30 A
Reverse surge current IRSM WP=1ms, Rectangular-Wave, One-shot, 100 mA
Junction Temperature TJ 130 °C
Allowable Operation Case Temperature Tc -40~+130 °C
Storage Temperature TSTG -40~+130 °C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless Otherwise Specified)
Items Symbols Condition Data value Units
Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 9.0 V

IR1 at 25°C; at VRRM 5.0 uA

Maximum Reverse Current
IR2 at 100°C; at VRRM 50 uA

Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR =IFAVM; IRR =0.25IR -- nS

Reverse Breakdown Voltage VZ at 25°C; IR=100uA 9.5 kV

GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2020-08 1 / 2
 2CL4509 450mA 9.0kV
High Voltage Silicon Diodes for Micro-wave oven
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Forward Current Derating Curves
125

100

Average 75
Forward
Current 50
-%
25

0
0 20 40 60 80 100 120 140 Temperature(°C)

Non-Repetitive Surge Current

100

75
Peak
Forward
Surge 50
Current
-%
25

0
1 10 100 Cycles (60Hz)

Forward Characteristics Reverse Characteristics

500 1

400
222 Ta=100°C
Ta=100°C
300 0.1
IFM IRRM
(mA) 200 (uA)
Ta=25°C Ta=25°C
100 0.01

0
0 3 6 9 12 15 18 21 0 3 6 9 12 15
VFM(V) VRM (kV)

GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2020-08 2 / 2